CN1993816A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
CN1993816A
CN1993816A CNA2005800258366A CN200580025836A CN1993816A CN 1993816 A CN1993816 A CN 1993816A CN A2005800258366 A CNA2005800258366 A CN A2005800258366A CN 200580025836 A CN200580025836 A CN 200580025836A CN 1993816 A CN1993816 A CN 1993816A
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film
thin
semiconductor
semiconductor device
laser
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CN100524659C (en
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山崎舜平
田中幸一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

When a semiconductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.

Description

Semiconductor device
Technical field
The present invention relates to have the semiconductor device and the manufacture method thereof of the circuit that comprises thin-film transistor (hereinafter being called TFT).For example, the present invention relates to have the electronic installation of electro-optical device as its assembly, described electro-optical device is panel of LCD or have the luminous display unit of organic illuminating element typically.
Semiconductor device in this specification is meant and can uses characteristic of semiconductor work and comprise all types of devices, for example the general device of electro-optical device, semiconductor circuit and electronic installation.
Background technology
Recent years, the technology of using the semiconductive thin film (about several nanometers are to the hundreds of nano thickness) that forms on have the substrate of insulating surface to form thin-film transistor (TFT) has caused concern.Thin-film transistor is widely used in the electronic installation of IC for example or electro-optical device, and particularly as the switch element of rapid image display unit and developed.
At first, use the mobility ratio of the thin-film transistor (TFT) that polycrystal semiconductor film forms to use two orders of magnitude or higher of mobility of the film formed TFT of amorphous semiconductor, and have the advantage that the pixel portion in the semiconductor display device and peripheral drive circuit can be integrated on the same substrate.By using laser anneal method on the glass substrate of cheapness, to form polycrystal semiconductor film.
As laser oscillator used in the laser anneal method, there are two types: pulsed laser oscillator and cw lasing device according to oscillation method.With the excimer laser be representative the pulse laser time per unit power output approximately than continuous-wave laser Senior Three to six times.Therefore, to be shaped as the length of side be that several centimetres rectangle spot or length is 100mm or longer linear spot by using optical system will restraint spot (in fact laser beam shines the zone on the body surface that will shine), can increase the flux of laser radiation, come to carry out laser radiation to semiconductor film effectively.For this reason, pulse laser has been mainly used in and has made the semiconductor film crystallization.
Notice that the term " linear " that uses is not meant proper line herein, and be meant rectangle (the perhaps ellipse of La Changing) with aspect ratio.For example, with length-width ratio be 2 or the RECTANGULAR BEAM spot of bigger (preferred 10～10000) be called the linear pencil spot.It should be noted that linearity is included in the rectangle.
List of references 1 (No. the 3276900th, Japan Patent) has been described a kind of technology of using pulse laser, wherein, about each two channel formation region (CH) that all have the channel width W that becomes the work design load, make the spacing P of the total value of the spacing WA between W and two channel formation regions greater than pulse laser.
Summary of the invention
Excimer laser is widely used as pulse laser.But excimer laser is difficult to greatly increase the cross-sectional area of the laser beam relevant with its power output.Therefore, laser beam (below be also referred to as laser) is deformed into band shape or wire, and scanning with overlapping each other, with the whole surface of irradiation substrate.The influence of laser beam energy distribution when being scanned of the grain size of crystal becomes inhomogeneous.
So by the pulse laser beam crystallization semiconductor film comprise a large amount of positions and size crystal grain at random.Different with crystal grain inside, that intercrystalline interface (crystal particle crystal boundary) comprises unlimited amount because crystal defect or caused trapping centre of impalpable structure or complex centre.When charge carrier when trapping centre is captured, the electromotive force of crystal particle crystal boundary increases and becomes the potential barrier to charge carrier, thereby causes the problem that carrier transport character reduces.
Under the situation of emission pulse laser on the semiconductor film, pulse laser one irradiation semiconductor film, the just fusing of its surface.After this, be cooled and condense from substrate one side because of the semiconductor film that melts to the heat conduction of substrate.Although semiconductor film recrystallizes into the semiconductor film for the crystal structure with big crystallite dimension in this condensation process, because of semiconductor film had been melted and their volume has become cause the unevenness that is called ridge (ridge) greatly on the surface of semiconductor film.Particularly under the situation of top grid (top-gate) type TFT, the surface with ridge becomes the interface that contacts with gate insulating film, so element characteristic changes because of ridge.
For above-mentioned reasons, the variation that causes the operating characteristic that is integrated in the drive thin film transistors in the display unit etc. is arranged, thereby produce the problem that shows irregular (mura).Specifically, are problems in a plurality of variations that are connected in parallel to each other between the thin-film transistor that is electrically connected.In addition, under the situation of the CPU of the circuit that forms to have thin-film transistor wherein integrated etc., the variation of the operating characteristic that causes thin-film transistor and the problem that is difficult to evenly work are arranged also.
Relate to and use the technology of continuous-wave laser crystal semiconductor film to cause concern recently.Under the situation of continuous-wave laser, different with conventional pulse laser, when laser beam scans when shining semiconductor film in one direction, may be in that grown crystal and formation be included in the gathering of the single grain that prolongs on the scanning direction continuously on the scanning direction.Therefore, can not produce unevenness, be ridge.By said method, can form hardly the semiconductor film that has at least the crystal boundary that the channel direction with TFT intersects.
One aspect of the present invention is when manufacturing comprises the circuit of a plurality of thin-film transistors, increased width LP, and in a zone, be provided with the active layer of a plurality of thin-film transistors (electrical connection is connected in parallel to each other) by the zone (not comprising the crystallite zone) that has been melted with continuous wave laser irradiation semiconductor film.
As the circuit that comprises a plurality of thin-film transistors, typically provide cmos circuit, nmos circuit, PMOS circuit etc.Can use cmos circuit, nmos circuit or PMOS circuit make negative circuit, NAND (with non-) circuit, AND (with door) circuit, NOR (or non-) circuit, OR (or) circuit, shift-register circuit, sample circuit, D/A converter circuit, A/D converter circuit, latch cicuit, buffer circuit etc.In addition, can make up memory element by making up these circuit, for example SRAM or DRAM or other element.
When with continuous wave laser irradiation semiconductor film, between irradiated region and non-irradiated region, form crystallite district with little crystallite dimension.Form the crystallite district in opposed both sides, to clip the crystal region that has than megacryst.In addition, when using the whole surface of laser radiation semiconductor film, preferred scan laser makes these crystallite districts overlap each other.
Spacing in this specification is meant the width of the irradiated region in a crystallite district that is included in a side.In addition, laser beam width LP is meant the width of the irradiated region that does not comprise the crystallite district, in other words, is the distance (having the width than the crystal region of megacryst) between the adjacent crystallite district.In addition, the overall width of laser beam is meant the width of irradiation area in two crystallite districts of the both sides that comprise vis-a-vis, in other words, is the overall width of illuminated lip-deep laser beam shape.
Disclosed in this manual structure of the present invention is a kind of semiconductor device, wherein form semiconductive thin film having on the substrate of insulating surface, and make it crystallization again with continuous-wave laser beam irradiation with fusing and cooling semiconductive thin film, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer; The electrical connection that is connected in parallel to each other of wherein said a plurality of thin-film transistor, and wherein the summation of WC and WS less than the width LP of continuous-wave laser beam, wherein WC be in a plurality of thin-film transistors the channel formation region width and and WS is the interval between the channel formation region.
Be set up in parallel under the situation of at least two thin-film transistors, another kind of structure of the present invention is a kind of semiconductor device, wherein form semiconductive thin film having on the substrate of insulating surface, and make it crystallization again with continuous-wave laser beam irradiation with fusing and cooling semiconductor film, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer; At least two thin-film transistors electrical connection that is connected in parallel to each other in wherein said a plurality of thin-film transistor, and wherein W1+W2+W3 and, promptly the width W 1 of the channel formation region in the first film transistor, the channel formation region in the first film transistor and and second thin-film transistor that forms of the transistorized raceway groove adjacent position of the first film in channel formation region between interval W2 and width W 3 sums of the channel formation region in second thin-film transistor, less than the width LP of continuous-wave laser beam.
In the present invention, can use repetition rate to replace continuous wave (CW) laser as 10MHz or higher pulse laser (being also referred to as accurate CW laser).Described repetition rate is far above tens repetition rates to hundreds of Hz of conventional pulse laser.It is said and after with the pulsed laser irradiation semiconductor film, make the semiconductor film full solidification need tens to hundreds of ns.When pulse laser has 10MHz or higher repetition rate, behind the laser fusion by the front, can before solidifying, semiconductor film use the pulsed laser irradiation semiconductor film at semiconductor film.
Therefore, different with the situation of using conventional pulse laser, the interface between solid phase and liquid phase can be moved in semiconductor film continuously, and forms the semiconductor film with the crystal grain of growing continuously on the scanning direction.Specifically, can form the gathering of crystal grain, each crystal grain is at the width that has 10～30 μ m, preferred 10～60 μ m on the scanning direction and have the width of about 1～5 μ m on the direction vertical with the scanning direction.
Compare with continuous-wave laser, accurate CW laser can increase significantly large beam spot area, suppress to glass substrate fire damage, make crystal growth continuously on the scanning direction, and be formed on the gathering of the monocrystalline that prolongs on the scanning direction.
Another kind of structure of the present invention is a kind of semiconductor device, wherein form semiconductive thin film having on the substrate of insulating surface, and for making it crystallization again more than or equal to 10MHz and smaller or equal to the irradiation of the pulse laser beam of 100GHz with fusing and cooling semiconductor film, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer with repetition rate; The electrical connection that is connected in parallel to each other of wherein said a plurality of thin-film transistor, and wherein the summation of WC and WS less than the width LP of pulse laser beam, wherein WC be in a plurality of thin-film transistors the channel formation region width and and WS is the interval between the channel formation region.
Another kind of structure of the present invention is a kind of semiconductor device, wherein on have the substrate of insulating surface, form semiconductive thin film, and make it again crystallization more than or equal to 10MHz and smaller or equal to the irradiation of the pulse laser beam of 100GHz with fusing and cooling semiconductor film with repetition rate, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer; The electrical connection that is connected in parallel to each other of at least two thin-film transistors in wherein said a plurality of thin-film transistor, and wherein W1+W2+W3 and, be the channel formation region in the first film transistor width W 1, the channel formation region in the first film transistor and and second thin-film transistor that forms of the transistorized raceway groove adjacent position of the first film in channel formation region between interval W2 and width W 3 sums of the channel formation region in second thin-film transistor, less than the width LP of pulse laser beam.
A feature of the present invention is in said structure, with the interval that equates described a plurality of thin-film transistor is set.
The CW laser that uses among the present invention is not specifically limited, and can use YAG laser, YVO 4Laser, GdVO 4Laser, YLF Lasers device or Ar laser.
Can use any laser as accurate CW laser, as long as it can launch the 20ps or the extremely short pulse laser beam of small-pulse effect width more.For example, can use excimer laser, Ar laser, Kr laser, CO 2Laser, YAG laser, Y 2O 3Laser, YVO 4Laser, YLF Lasers device, YAlO 3Laser, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser etc.
When the method for using manufacturing crystal semiconductor film of the present invention is made the crystal semiconductor film, can obtain crystal semiconductor film high yield, that have good characteristic.In addition, when use is made semiconductor element by the crystal semiconductor film of the method crystallization of manufacturing crystal semiconductor film of the present invention, can reduce the characteristic variations between the semiconductor film element.
Description of drawings
Figure 1A～1C is vertical view and the cutaway view according to one aspect of the invention (execution mode 1);
Fig. 2 A and 2B are respectively the vertical views according to one aspect of the invention (execution mode 2);
Fig. 3 is a laser irradiating device;
Fig. 4 is that laser beam is at the lip-deep scanning pattern of semiconductor film;
Fig. 5 A～5C is the manufacture method of laser irradiating method and semiconductor device;
Fig. 6 A～6D is the manufacture method of laser irradiating method and semiconductor device;
Fig. 7 A～7D is the manufacture method of laser irradiating method and semiconductor device;
Fig. 8 is the drive circuit in the light-emitting device and the structure of pixel, the semiconductor display device that this light-emitting device is to use laser irradiating device to form;
Fig. 9 A and 9B are respectively the cutaway views of light-emitting component;
Figure 10 is the vertical view of luminescence component;
Figure 11 A and 11B have shown an example of electronic installation respectively; And
Figure 12 A～12E has shown an example of electronic installation respectively.
Embodiment
Hereinafter will illustrate according to the embodiment of the present invention with reference to the accompanying drawings.The present invention can implement in many different modes, and the easy understanding of those skilled in the art can be revised mode disclosed herein and details in many aspects and can not deviate from the spirit and scope of the present invention.It should be noted that the present invention should not be construed as the explanation that is confined to execution mode given below.
Execution mode 1
With reference to the state of Figure 1A～1C explanation scanning CW laser beam on the semiconductor film surface that forms on the substrate and the TFT of manufacturing.
Figure 1A shows the vertical view of laser beam 11 at the lip-deep scanning mode of amorphous semiconductor film.Laser beam 11 has the oval pencil of forms spot of elongation and scanning on the scanning direction shown in the arrow 12 in by figure, partly to form crystal region.
Although do not show among Figure 1A,, above having the substrate of insulating surface, formed basic dielectric film and formed the amorphous semiconductor film thereon because shown the example that forms top gate type TFT among the figure.
In the crystallisation procedure does of amorphous semiconductor film, use the continuous wave solid-state laser in the present embodiment and will have the secondary, three times of first-harmonic or the laser beam of four-time harmonic is transmitted on the semiconductor film, to obtain crystal with big crystallite dimension.Typically, for example preferably use Nd:YVO 4The second harmonic (532nm) or the triple-frequency harmonics (355nm) of laser (first-harmonic is 1064nm).Specifically, will be by nonlinear optical element from continuous wave YVO 4Laser emitted laser bundle converts harmonic wave to, is the laser beam of 10W thereby obtain power output.An example as resonator comprises YVO in resonator 4Crystal and nonlinear optical element send harmonic wave.Then, preferably by optical system with laser beam on irradiated surface, formalize (shaping) become rectangle or oval pencil of forms spot, thereby use the laser beam irradiation object.In the case, need about 0.01～100MW/cm 2(be preferably 0.1～10MW/cm 2) power density.
As the method for scan laser, following method is arranged: fixing as processing object substrate and the irradiation system moving method of mobile laser irradiating position; Fixed laser irradiation position and the processing object moving method of mobile substrate; And the method that makes up these two kinds of methods.Under any circumstance, need the moving direction of each laser beam spot of control with respect to semiconductor film.In the present embodiment, moving with the speed of about 10～2000cm/sec with respect to laser will be by the amorphous semiconductor film of laser radiation.When substrate expansion, preferably carry out laser radiation by the operation autofocus mechanism according to this expansion.
The regional 14a that has formed the crystal grain of being grown by laser radiation on the scanning direction has very good degree of crystallinity.Therefore, when this zone is used for the channel formation region of TFT, can expect very high mobility or conducting electric current.
As shown in Figure 1A, preferably design according to the mode that makes the regional 15a that becomes the TFT raceway groove that the back will form be positioned at irradiation area 14a inside.Specifically, as shown in the vertical view of Figure 1B, when being arranged to be electrically connected to each other when two TFT are walked abreast, the zone that become the raceway groove of two TFT is positioned at the inside of irradiation area 14a.In Figure 1B, two TFT are arranged on the direction vertical with the scanning direction.In other words, a feature of the present invention width LP that is irradiation area 14a is greater than the interval W2 sum (W1+W2+W3) between the channel width W3 of channel width W1, the 2nd TFT of a TFT and two raceway grooves.
In the zone between irradiation area 14a and non-irradiation area 13, formation will become the irradiation area of crystallite 14b.So that it does not form irradiation area 14b with the mode of the region overlapping that will become active layer 15b, this is because do not wish to become the part of the irradiation area of crystallite 14b as the active layer of TFT.In addition, scan, make the zone that under the situation of reirradiation, will become crystallite 14b overlap each other.In other words, the subregion that become crystallite 14b is overlapping.
After laser radiation, carry out patterning forming two island semiconductor layers, and form gate insulating film, gate electrode, interlayer dielectric, source wiring, leak routing etc. by known method, finish thin-film transistor.
Figure 1B has shown the connected mode of two TFT that finish.Correspondingly show Figure 1B with Figure 1A; But in fact,, therefore reduced the size of active layer because substrate etc. shrinks because of heat treatment etc. in the manufacture process of TFT.
In Figure 1B, be set up in parallel the first semiconductor layer 16a and the second semiconductor layer 16b.In addition, common gate wiring 17, source wiring 18 and leak routing 19 in two TFT, and two TFT electrical connection that is connected in parallel to each other.
The cutaway view that has shown the solid line A-A ' intercepting in Figure 1B among Fig. 1 C.Hereinafter schematic representation according to the present invention typical TFT manufacture process.
In Fig. 1 C, substrate 20 can be glass substrate, quartz substrate etc.In addition, can use thermal endurance to be enough to resist the plastic of processing temperature.
Shown in Fig. 1 C, on substrate 20, form by for example silicon oxide film, silicon nitride film or silicon oxynitride film (SiO xN y) the film formed basic dielectric film of insulation.As the representative instance of basic dielectric film, can use double-layer structure, wherein piled up use SiH continuously 4, NH 3And N 2Oxidized silicon nitride film 21a that 50～100nm that O forms as reacting gas is thick and use SiH 4And N 2The thick silicon oxynitride film 21b of 100～150nm that O forms as reacting gas.In addition, preferably use the silicon nitride film (SiN film) or the silicon oxynitride film (SiN of 10nm or littler thickness xO yFilm, x＞y) is as one deck of basic dielectric film.Alternatively, three-decker be can use, oxidized silicon nitride film, silicon oxynitride film and silicon nitride film wherein piled up continuously.
Then, above described basic dielectric film, form semiconductor film with impalpable structure.Can use the semi-conducting material that mainly comprises silicon as semiconductor film.Typically, form amorphous silicon film or amorphous SiGe film by known method (for example sputter, LPCVD or plasma CVD).Then, by above-mentioned CW laser, obtain semiconductor film with crystalline texture.
Then, carry out patterning, obtain first and second semiconductor layers by photoetching method.Use the aqueous solution ozoniferous or produce ozone, form the oxidation film of each semiconductor layer of protection before the Etching mask in forming patterning by the UV-irradiation in oxygen atmosphere.This oxidation film also has the wettable function of the resist of increasing.
Should be understood that if necessary, before patterning, pass the oxidation film a spot of impurity element (boron or phosphorus) that mixes and control the threshold value of TFT.When doping is when passing oxide-film and carrying out, oxide-film is removed used the aqueous solution ozoniferous to form oxide-film once more then.
After this, the formation dielectric film that mainly comprises silicon that will become gate insulating film covers each semiconductor layer.Form by PCVD have 10～100nm, be preferably 10～30nm than the silicon oxide film of minimal thickness or silicon oxynitride film as gate insulating film.By making the gate insulating film attenuation can under higher rate, drive the circuit that comprises TFT.Herein, the gate insulating film of formation has first dielectric film 24a that comprises silicon oxide film and the laminated construction that comprises the second dielectric film 24b of silica oxide-film.It should be noted that before forming gate insulating film to use the etching agent of hydrofluoric acid containing to remove oxide-film.In addition, not necessarily remove the oxide-film in the semiconductor layer fully, and can stay very thin oxide-film.If etching excessively exposes semiconductor layer, the surface is just arranged by the danger of contaminating impurity.
Then, clean the surface of gate insulating film.After this, form metal film (be selected from the element among Mo, Ta, W, Ti, Al and the Cu or mainly contain the alloy material of described element or the individual layer or the lamination of compound-material) by sputtering method.
Form grating routing 17 by photoetching process pattern metal film.
Suitably the impurity element that mixes and give the impurity element of n type conductivity (for example P or As) or give p type conductivity (for example B) in each semiconductor layer forms source region 22 and drain region 23.Pass gate insulating film by ion doping method or ion injection method and in semiconductor layer, add this impurity element.If form the n channel TFT, can add the impurity element of giving n type conductivity and form impurity range.If form the p channel TFT, can add the impurity element of giving p type conductivity and form impurity range.
In the step below, form interlayer dielectric 25, carry out hydrogenation, form the contact hole that reaches source region 22 and drain region 23, form conducting film and patterning and form source electrode 18 and drain electrode 19, thereby finish TFT.
The present invention is not limited to the TFT structure shown in Fig. 1 C.If desired, can use LDD (lightly doped drain) structure that between channel formation region and drain region (perhaps source region), has the LDD district.In this structure, the zone that wherein has been added the low concentration impurity element is set between the channel formation region that forms by mixing with the high concentration impurities element and drain region or source region, this zone is called as the LDD district.In addition, can also use GOLD (grid-leak overlapping LDD) structure, wherein LDD district and gate electrode clip gate insulating film and are overlapping.
Herein as a case description top gate type TFT, but can use the present invention and no matter the TFT structure, and the present invention can apply to for example staggered TFT.
According to the present invention, use the CW laser to replace conventional pulse laser, therefore can obtain to have plane surface and the semiconductor layer 16a that do not have ridge.In addition, can make gate insulating film 24a and 24b thinner.
Execution mode 2
The state of the accurate CW laser beam of scanning on the semiconductor film surface that forms above the substrate and the TFT of manufacturing with reference to figure 2A and 2B explanation.
Fig. 2 A shows the vertical view of laser beam 31 at the lip-deep scanning mode of amorphous semiconductor film.Laser beam 31 has the oval pencil of forms spot of elongation and scanning on the scanning direction shown in the arrow 32 in by figure, partly to form crystal region.
Although show among Fig. 2 A,, formed basic dielectric film on the substrate of insulating surface and formed the amorphous semiconductor film in the above having because shown the example of formation top gate type TFT among the figure.
In with amorphous semiconductor membrane crystallization process, use the YVO of power output as 1.8W 4Laser and repetition rate are that 80MHz and pulse duration are approximately 12ps.Pulse recurrence rate is not limited to 80MHz in the present invention, and can be 10MHz or higher.In addition, in the present invention, the upper limit of repetition rate can be 100GHz, thereby before obtaining on the degree that does not hinder focussing property, to have same wave and the laser with high circularity.In addition, the present invention is not limited to the solid-state laser that can obtain about 1.8W power output, and can use the high power laser that for example can obtain greatly to the power output of 300W.
In the present embodiment, laser oscillator comprises the stable state resonator and preferably has TEM 00The spatial distribution of pattern.At TEM 00Therefore under the situation of pattern, laser has gaussian intensity profile and has good focussing property, and restraints spot and can easily be deformed.
On irradiating surface, form the laser beam 31 that size is approximately 10 μ m * 100 μ m by optical system.The overall width of laser beam on irradiating surface is 100 μ m.Scanning samples platform on the short-axis direction of laser beam 31.The sweep speed of noting the bundle spot is preferably tens to hundreds of mm/sec, adopts 400mm/sec herein.By the scanning samples platform, on the scanning direction shown in Fig. 2 A 32 with respect to the surface scan laser beam 31 of semiconductor film.Semiconductor film fusing in by the irradiated region 34a of laser beam bundle spot irradiation, and move on the scanning direction continuously at the interface between solid phase and liquid phase.Therefore, formed a plurality of single grain of growing on the scanning direction, wherein the width of each single grain is a few μ m and magnanimous 10～30 μ m that are about, and goes out the zone that the LP width is 70 μ m to lay (filling).
As shown in Fig. 2 A, preferably at the regional 35a of irradiated region 34a inner formation will the becoming TFT raceway groove that will form afterwards.Specifically, be electrically connected in the parallel connection shown in the vertical view of Fig. 2 B under the situation of three TFT, the zone that become the raceway groove of three TFT preferably is present in irradiated region 34a inside.In Fig. 2 B, be designed so that three TFT are by being arranged in together on the direction vertical with the scanning direction.In other words, a feature of the present invention width LP that is irradiated region 34a is greater than the channel width W5 of channel width W3, the 3rd TFT of channel width W1, the 2nd TFT of a TFT and the interval W2 between the raceway groove and W4's and (W1+W2+W3+W4+W5).
In addition, in Fig. 2 B, be designed so that on the scanning direction, also to arrange three TFT, and therefore arrange 9 TFT altogether.Channel formation region is with being spaced of equating.
Between irradiation area 34a and non-irradiation area 33, form the irradiation area that will become crystallite 34b.With the overall width 100 μ m (overall width of laser beam) of irradiated region, form the wide crystallite district of 15 μ m, grown crystal therein herein, in a side that facing to the LP width is the zone of 70 μ m.Because do not wish to make the irradiation area that will become crystallite 34b to become the part of TFT active layer, so so that it does not form the irradiation area that will become crystallite 34b with the mode of the region overlapping that will become active layer 15b.
When carrying out laser radiation on the whole surface of semiconductor film, the spacing of multiple scanning is 85 μ m, so that the wide crystallite district of 15 μ m overlaps each other.
After finishing laser radiation, carry out patterning forming two island semiconductor layers, and form gate insulating film, gate electrode, interlayer dielectric, source wiring, leak routing etc., thereby finish TFT by known method.
Fig. 2 B has shown the connected mode of three TFT that finished.With Fig. 2 A displayed map 2B correspondingly; But in fact,, reduced the size of active layer because substrate etc. shrinks because of heat treatment etc. in the manufacture process of TFT.
In Fig. 2 B, the first semiconductor layer 36a, the second semiconductor layer 36b and the 3rd semiconductor layer 36c have been set up in parallel.In addition, common gate wiring 37, source wiring 38 and leak routing 39 in three TFT, and three TFT electrical connection that is connected in parallel to each other.
Under the situation of the CW laser that in execution mode 1, uses, with time of some point in the laser radiation semiconductor film be the magnitude of 10 μ s.But in the present embodiment, because pulse recurrence rate is up to 10MHz or higher, so pulse duration is smaller or equal to 1ns.Therefore, the time with a point of laser radiation can be 10 of CW laser -4Times, and can make peak power be higher than the CW laser far away., when the semiconductor film that will form on substrate carries out crystallization, compare for this reason, can suppress the heat that substrate is provided according to the present invention significantly with the CW laser.Therefore, can prevent that substrate from shrinking and prevention impurity is diffused into the semiconductor film from other films.Consequently, can improve property of semiconductor element and can increase rate of finished products.
Use accurate CW laser to replace conventional pulse laser, therefore can obtain to have flat surfaces and semiconductor layer 36a, the second semiconductor layer 36b and the 3rd semiconductor layer 36c that do not have ridge.In addition, can make gate insulating film thinner.
Because use this repetition rate that is higher than traditional pulse laser far away, thus other advantages can also be obtained, promptly even when laser vertical is transmitted on the substrate, also can suppress because from the caused interference of light of substrate back of the body surface reflection.Because can vertically laser be sent on the substrate, so carry out optical design easily and can make the Energy distribution of gained bundle spot more even.
Present embodiment can combine with execution mode 1.
Explain the present invention with said structure below by embodiment.
Embodiment
Embodiment 1
In execution mode 1, with reference to the structure of figure 3 explanation laser irradiating devices.
Reference numeral 101 is represented pulsed laser oscillator, and it is the pulse YVO with 1.8W power output in the present embodiment 4Laser.Reference numeral 102 is represented nonlinear optical element.Laser oscillator 101 comprises the stable state resonator and preferably has TEM 00The spatial distribution of pattern.At TEM 00Under the situation of pattern, laser has gaussian intensity profile and is superior aspect focussing property, therefore restraints spot and is deformed easily.To convert second harmonic (wavelength 532nm) from the laser that laser oscillator 101 is launched to by nonlinear optical element 102.Although harmonic wave is not confined to second harmonic especially, because second harmonic is better than other more high order harmonic component aspect energy efficiency, so it is preferred.Pulse recurrence rate is set to 80MHz and pulse duration is set to about 12ps.
Pulse recurrence rate is not limited to 80MHz, and it can be more than or equal to 10MHz.In addition, in the present invention, the upper limit of repetition rate can be 100GHz, thereby before obtaining on the degree that does not hinder focussing property, to have same wave and the laser with high circularity.
In the laser irradiating device in Fig. 3, can provide nonlinear optical element 102, perhaps can provide the resonator that is equipped with nonlinear optical element separately in the laser oscillator outside of first-harmonic in the resonator inside in being included in laser oscillator 101.The size that former structure has equipment becomes compact and does not need accurately to control the advantage of resonator length.Latter's structure has the advantage that can ignore the harmonious wave interaction of first-harmonic.
As nonlinear optical element 102, use the bigger crystal of nonlinear optical constant, for example KTP (KTiOPO 4), BBO (β-BaB 2O 4), LBO (LiB 3O 5), CLBO (CsLiB 6O 10), GdYCOB (YCa 4O (BO 3) 3, KDP (KD 2PO 4), KB 5, LiNbO 3Perhaps Ba 2NaNb 5O 15Particularly for example the crystal of LBO, BBO, KDP, KTP, KB5, CLBO etc. can increase from the conversion efficiency of first-harmonic to harmonic wave.
Because laser is generally with horizontal direction emission, thus by speculum 103 reflections from laser oscillator 101 emitted laser and change its direction of propagation, make to have angle (incidence angle) θ with vertical direction.In the present embodiment, angle θ is 18 °.To change by lens 104 direction of propagation laser bundle spot distortion and send to the processing object that is fixed on the sample stage 107.In Fig. 3, the semiconductor film 106 that forms on substrate 105 is processing objects.In addition, in Fig. 3, speculum 103 and lens 104 are corresponding to the optical system that laser is converged on the semiconductor film 106.
Fig. 3 has shown the example of use plano-convex spherical lens as lens 104, and the plano-convex spherical lens has the focal length of 20mm.The plano-convex spherical lens is set, and it is parallel with substrate 105 to make that laser enters center and its planar section of curved surface.The distance that the planar section of plano-convex spherical lens and semiconductor film are 106 is 20mm.This just forms the bundle spot 110 with about 10 μ m * 100 μ m sizes on the surface of semiconductor film 106.Bundle spot 110 may be extended.
Formed in the above under the situation of substrate 105 as processing object of semiconductor film 106 using as shown in Figure 3, when semiconductor film 106 is amorphous semiconductor, preferably before laser radiation, semiconductor film 106 is carried out thermal annealing, to increase the patience of 106 pairs of laser of semiconductor film.Specifically, can in 500 ℃ nitrogen atmosphere, carry out about 1 hour thermal annealing.Replace thermal annealing, can use the crystallization of catalyst metals to make the semiconductor film crystallization.For the semiconductor film of crystallization by the crystallization of thermal annealing or use catalyst elements, the optimum condition of laser radiation almost is identical.
Utilization is used in robot 108 that scans on the X-direction (the single shaft robot that is used for X-axis) and the robot 109 (for the single shaft robot of Y-axis) that is used for scanning on Y direction, and sample stage 107 can move on the XY direction on the plane parallel with substrate 105.
Use is used for single shaft robot 109 scanning samples platform 107 on the short-axis direction of bundle spot 110 of Y-axis.The sweep speed of sample stage 107 is suitable in the scope of about tens to several thousand mm/s, and it is set to 400mm/s in the present embodiment.The scanning of sample stage 107 is moved bundle spot 110 with respect to the surface of semiconductor film 106.Therefore, restraint the zone melting in the semiconductor film of spot 110 irradiation, and the interface between solid phase and liquid phase is mobile continuously on the scanning direction.Like this, formed a plurality of single grain of growing on the scanning direction, the width of each single grain is a few μ m and about 10～30 μ m of length, goes out the zone that the LP width is 70 μ m to lay (filling).
Then, Fig. 4 has shown the scanning pattern of bundle spot 110 on semiconductor film 106.Under the situation on the whole surface of the semiconductor film 106 that is equivalent to processing object with laser radiation, after the single shaft robot 109 that use is used for Y-axis has scanned bundle spot 110 in one direction, the single shaft robot 108 that the is used for X-axis bundle spot 110 that on the vertical direction of the direction that is scanned with the single shaft robot 109 that is used for Y-axis, slides.The distance of sliding is corresponding to spacing.
For instance, the sewwp beam spot 110 in one direction of the single shaft robot 109 by being used for Y-axis.In Fig. 4, represent scanning pattern with A1.Then, the single shaft robot 108 that the is used for X-axis bundle spot 110 that on the direction vertical, slides with scanning pattern A1.Represent the scanning pattern that slides with B1.Then, single shaft robot 109 sewwp beam spot 110 on a direction opposite that is used for Y-axis with scanning pattern A1.Represent this scanning pattern with A2.Then, the single shaft robot 108 that the is used for X-axis bundle spot 110 that on the direction vertical, slides with scanning pattern A2.Represent the scanning pattern that slide this moment with B2.By single shaft robot 109 that is used for Y-axis and single shaft robot 108 multiple scanning successively that is used for X-axis, can use the whole surface of laser radiation semiconductor film 106.
The zone of the crystal grain of having grown on the scanning direction that is formed by laser radiation has very superior degree of crystallinity.Therefore, when this zone is used as the channel formation region of TFT, can expect very high mobility and conducting electric current.But when having in semiconductor film when not needing high-crystallinity so regional, not needing should the zone with laser radiation.Alternatively, can be under the condition that does not obtain high-crystallinity, for example launch laser having increased under the sweep speed.
As the method for scan laser, following method is arranged: fixing as processing object substrate and the irradiation system moving method of mobile laser irradiating position; As shown in Fig. 3 and 4, fixed laser irradiation position and the processing object moving method of mobile substrate; And the method that makes up these two kinds of methods.Under any circumstance, all need to control the moving direction of each bundle spot with respect to semiconductor film.
The following describes the manufacturing step of TFT.
On a surface of the thick glass substrate of 0.7mm, form the thick silica of 200nm, form the thick amorphous silicon of 66nm (a-Si) film in the above as semiconductor film by plasma CVD method then.After this, in order to increase the patience of semiconductor film, in 500 ℃ nitrogen atmosphere, carry out 1 hour thermal annealing to laser.
Then, use laser irradiating device shown in Figure 3 to make described amorphous silicon film crystallization, condition is: YVO 4Laser has the second harmonic that power is 1.8W (532nm), TEM 00The pulse duration of the spatial distribution of pattern, the pulse recurrence rate of 80MHz and 12ps; Sweep speed is 400mm/sec; And beam spot size is about 10 μ m * 100 μ m.Situation is that width is that a few μ m and length are that 10～30 μ m and the single grain of growing on the scanning direction are laid (filling) and gone out the zone that the LP width is 70 μ m.
At resulting LP width is in the zone of 70 μ m, and pattern dissolves the semiconductor layer of a plurality of islands shape.For instance, be that to arrange channel width in the zone of 70 μ m side by side be that first channel formation region and the channel width of W1 (W1 is 20 μ m) is second channel formation region of W2 (W2 is 20 μ m) at the LP width, and will be spaced apart therebetween 10 μ m are set.Consequently, can make the LP width of crystal region greater than channel width and summation (the width 70 μ m of crystal region＞20 μ m+20 μ m+10 μ m) at interval.Each of channel length L2 that should be understood that the channel length L1 of first channel formation region and second channel formation region all is 8 μ m.
In the step below, using known technology to form at least two TFT and these TFT with above-mentioned channel formation region is in parallel electrical connections.So, can obtain a TFT (L1/W1=8 μ m/20 μ m) and the 2nd TFT (L2/W2=8 μ m/20 μ m).In resulting two TFT, at least two channel formation regions, carry out crystallization and TFT equably and show much at one electrology characteristic.
When two TFT that parallel connection is electrically connected are used for being integrated in the drive circuit of display unit etc., can make the operating characteristic unanimity, and can eliminate because the demonstration inhomogeneity (mura) that drive circuit causes.
Similarly, when using above-mentioned two TFT Production Examples, can reduce the variation of thin-film transistor operating characteristic and can obtain uniform operation as the wherein integrated CPU of nmos circuit, PMOS circuit or cmos circuit.
Present embodiment can freely combine with execution mode 1 or 2.
Embodiment 2
Manufacture method with reference to figure 5A～5C explanation embodiment 2 described semiconductor devices.
As shown in Fig. 5 A, at first on substrate 500, form basement membrane 501.For instance, can use glass substrate, for example at the bottom of barium borosilicate glass or alumina-borosilicate glass, quartz substrate, the stainless steel lining etc. as substrate 500.In addition, although comprise such as the substrate that with PET, PES or PEN is the acrylic acid of representative or the flexible synthetic resin the plastics trending towards aspect heat-resisting, when can tolerating treatment temperature in the manufacture process, it also can use the substrate that comprises flexible synthetic resin than above-mentioned contrast difference.
Be provided with basement membrane 501 to prevent alkaline-earth metal included in the substrate 500 or alkali metal (for example Na) and diffuse in the semiconductor film and influence property of semiconductor element unfriendly.Therefore, use insulating material to form basement membrane, for example silica, silicon nitride or oxidized silicon nitride, they can suppress alkaline-earth metal and alkali metal is diffused in the semiconductor film.In the present embodiment, form 10～400nm by plasma CVD method and (be preferably 50～300nm) thick oxidized silicon nitride films.
Notice that basement membrane 501 can be formed by the individual layer dielectric film, perhaps can form by the stacked multilayer dielectric film.At the substrate that uses even comprise small amount of alkali metal or alkaline-earth metal, for example at the bottom of glass substrate, the stainless steel lining or under the situation of plastic, preventing that it is effective providing basement membrane aspect the diffusion of impurities.When the substrate that uses impurity to be difficult to spread, for example during quartz substrate, always do not need to provide basement membrane.
Next, on basement membrane 501, form 25～100nm (preferred 30～60nm) thick semiconductor films 502.Semiconductor film 502 can be amorphous semiconductor or poly semiconductor.In addition, not only can use silicon but also can use SiGe as semiconductor.
Next, use the laser irradiating device laser radiation semiconductor film 502 among Fig. 3, thereby make semiconductor film 502 crystallizations, as shown in Fig. 5 B.
In the present embodiment, use repetition rate with 80MHz to provide that 2W, pulse duration are TEM as 12ps and spatial distribution down at 532nm (second harmonic) 00The YVO of pattern 4Laser carries out laser radiation.In addition, to have minor face be that 10 μ m and long limit are the rectangular shape of 100 μ m to the bundle spot that laser setting is formed on semiconductor film 502 surfaces by optical system.
Then, on the direction of representing by the outlined arrow shown in Fig. 5 B on the surface of semiconductor film 502 sewwp beam spot.Be set to 80MHz by pulse recurrence rate, the interface between solid phase and liquid phase can be moved on the direction of being represented by this outlined arrow continuously.Therefore, be formed on the crystal grain of growing continuously on the scanning direction.By being formed on the single grain that prolongs on the scanning direction, can form the semiconductor film that on the channel direction of TFT, does not almost have crystal particle crystal boundary at least.
Can for example carry out laser radiation in rare gas or the nitrogen at inert gas atmosphere.Like this, can suppress the roughness of semiconductor surface, and can suppress to change and the changes of threshold of generation by interface state density by laser radiation.
By with aforesaid laser radiation semiconductor film 502, formed the higher semiconductor film 503 of degree of crystallinity.
Next, patterned semiconductor film 503 forms the island shape semiconductor film 507～509 as shown in Fig. 5 C.Use island shape semiconductor film 507～509 to form with the various semiconductor elements of TFT as representative.
Under the situation of making TFT,, formed gate insulating film and covered island shape semiconductor film 507～509 although do not show.Can pass through plasma CVD method, sputtering method etc. and form gate insulating film with for example silica, silicon nitride or oxidized silicon nitride etc.
Next, by on gate insulating film, forming conducting film and its patterning being formed gate electrode.Then, the resist that utilizes this gate electrode or patterning adds in island shape semiconductor film 507～509 and gives the impurity of n type conductivity or p type conductivity as mask, forms source region, drain region and/or LDD district.
By above-mentioned steps, can form TFT.The method of making semiconductor device of the present invention is not limited to the TFT manufacture process after forming the island shape semiconductor film as shown in this embodiment.When using semiconductor film by above-mentioned laser irradiating method crystallization as the active layer of TFT, the variation of mobility, threshold value and conducting electric current between can suppression element.
Before the laser crystallization operation, can use the crystallization step of catalyst elements.As catalyst elements, can use nickel (Ni), germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), plumbous (Pb), cobalt (Co), platinum (Pt), copper (Cu), gold (Au) etc.When carrying out laser crystallization after using the crystallization of catalyst elements, laser radiation can not melted more the bottom near the semiconductor film of substrate one side.Therefore, crystal keeps and can not be melted and become nucleus in more near the bottom of the semiconductor film of substrate one side, and has promoted equably from more near the bottom of the substrate one side upper junction crystallization to semiconductor film.With only compare with the situation of laser crystallization semiconductor film, can further improve the degree of crystallinity of semiconductor film, and suppress the roughness on semiconductor film surface after the laser crystallization.Therefore, what can suppress more will form subsequently be the property of semiconductor element variation of representative with TFT, and can suppress cut-off current.
Attention can be carried out laser radiation and carry out crystallization in the mode of further raising degree of crystallinity then to heat-treat after the catalyst elements having added in order to promote crystallization.Alternatively, can omit heat treatment.Specifically, after adding catalyst elements, replace heat treatment, Laser emission can be improved degree of crystallinity to semiconductor film.
Present embodiment can with execution mode 1 or 2 or embodiment 1 freely combine.
Embodiment 3
Different with embodiment 2, embodiment 3 has explained the embodiment that the crystallization method of the laser irradiating device among use Fig. 3 combines with the crystallization method that uses catalyst elements.
Fig. 5 A in the reference example 2 carries out until the process that forms semiconductor film 502.Next, as shown in Fig. 6 A, on the surface of semiconductor film 502, apply the nickel acetate solution that contains 1～100ppm weight range Ni by spin coating method.Noting not only can be by top method, and can pass through other method, and for example sputtering method, vapor deposition or plasma treatment are added catalyst elements.Then, under the temperature of 500～650 ℃ of scopes, carry out 4～24 hours heat treatment, for example under 570 ℃ temperature, handled 14 hours.This heat treatment forms semiconductor film 520, has wherein applied the surface of nickel acetate solution at face from it and promoted crystallization (Fig. 6 A) on the vertical direction of substrate 500.
By using lamp, for example under 740 ℃ temperature, carry out 180 seconds heat treatment as the RTA (rapid thermal annealing) of thermal source or the RTA (gas RTA) of use hot gas.Design temperature is the underlayer temperature of being measured by pyrometer, and the temperature of measuring is defined as the design temperature in the heat treatment herein.Can use annealing furnace 550 ℃ of temperature to carry out 4 hours heat treatment as another kind of method.It is the behavior with metallic element of the catalytic activity that reduces temperature and shorten the time in crystallization.
Although present embodiment uses nickel (Ni) as catalyst elements, also can use other element, for example germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), plumbous (Pb), cobalt (Co), platinum (Pt), copper (Cu) or gold (Au).
Subsequently, as shown in Fig. 6 B, use the laser irradiating device among Fig. 3 to make semiconductor film 520 crystallizations.In the present embodiment, use repetition rate to be 80MHz and pulse duration pulse YVO for about 12ps 4The second harmonic of laser is as laser.
By the above-mentioned semiconductor film 520 of laser radiation, form the higher semiconductor film 521 of degree of crystallinity.Think use the catalyst elements crystallization semiconductor film 521 comprise concentration and be about 1 * 10 19Atom/cm 3Catalyst elements (herein being Ni).Then, carry out air-breathing (gettering) of the catalyst elements of existence in the semiconductor film 521.
As shown in Fig. 6 C, on the surface of semiconductor film 521, formed oxide-film 522.By forming the oxide-film 522 of the about 1～10nm of thickness, can prevent that the surface of semiconductor film 521 from becoming coarse in follow-up etching process.Can form oxide-film 522 by known method.For example, can come the surface of oxide-semiconductor film 521 to form oxide-film 522 by the solution that uses Ozone Water or use hydrogenperoxide steam generator to mix with sulfuric acid, hydrochloric acid or nitric acid etc.Alternatively, can in oxygen-containing atmosphere, pass through plasma treatment, heat treatment, ultraviolet rays irradiation etc. and form oxide-film 522.In addition, can also pass through other method, for example plasma CVD method, sputtering method, vapour deposition process etc. form oxide-film 522.
Form the thick air-breathing semiconductor film 523 of using of 25～250nm by sputtering method above oxide-film 522, it contains concentration is 1 * 10 20Atom/cm 3The rare gas element.In order to increase the etching selection of semiconductor film 523 and semiconductor film 521, air-breathing mass density with semiconductor film 523 preferably is lower than semiconductor film 521.As the rare gas element, use one or more elements that are selected from helium (He), neon (Ne), argon (Ar), krypton (Kr) and the xenon (Xe).
Next, by carrying out air-breathing according to the heat treatment of furnace annealing method or RTA method.When using the furnace annealing method, in nitrogen atmosphere, under 450～600 ℃ temperature, carry out 0.5～12 hour heat treatment.When using the RTA method, open the lamp source 1～60 second, preferred 30～60 seconds of heating usefulness, repeat 1～10 time, preferred 2～6 times.The luminous density of lamp source can be set arbitrarily, make semiconductor film under 600～1000 ℃, preferred about 700～750 ℃ temperature, be heated immediately but it is set.
By heat treatment, as shown by arrows, the catalyst elements of semiconductor film 521 inside is shifted to the air-breathing semiconductor film 523 of using because of diffusion, and catalyst elements is therefore by air-breathing.
Then, by etching selection remove air-breathing with semiconductor film 523.By using ClF 3For example do not contain hydrazine or tetraethyl ammonium hydroxide (chemical formula (CH and do not apply the dry etching of plasma or use 3) 4The wet etching of the alkaline solution of solution NOH) is implemented etching process.In the case, oxide-film 522 can prevent that semiconductor film 521 is etched.
Then, after removing oxide-film 522 by hydrofluoric acid, patterned semiconductor film 521 forms island shape semiconductor tunic 524～526 (Fig. 6 D).Use these island shape semiconductor tunics 524～526 can form various semiconductor elements, TFT typically.Notice that air-breathing method is not limited to the method shown in the present embodiment.Also can use the catalyst elements in other method minimizing semiconductor film.
In the present embodiment, the top of laser radiation melting semiconductor film, but do not melt more lower part near the semiconductor film of substrate one side.Therefore, the crystal that forms by the crystallization that uses catalyst elements in more near the lower part of the semiconductor film of substrate one side stays and is not melted and becomes nucleus, and the top from the bottom of substrate one side to semiconductor film has promoted crystallization equably.In addition, the easy marshalling of the orientation of crystal.Therefore, compare, prevented that the surface of semiconductor film from becoming coarse with the situation among the embodiment 2.What in addition, can further suppress will to form subsequently is the variation of the property of semiconductor element of representative with TFT.
The attention present embodiment has been explained by heat-treating after having added catalyst elements and has been promoted crystallization, and further improved degree of crystallinity by laser radiation.But the present invention is not limited to this, also can omit heat treatment.Specifically, after having added catalyst elements,, can launch laser and replace heat treatment in order to improve degree of crystallinity.
Present embodiment can with execution mode 1 or 2 or embodiment 1 or 2 freely combine.
Embodiment 4
Embodiment 4 has also explained the embodiment that the method for crystallising of the laser irradiating device that uses Fig. 3 combines with the method for crystallising that uses catalyst elements.But, different among embodiments herein and the embodiment 3.
Fig. 5 A in the reference example 2 carries out until the process that forms semiconductor film 502.Next, above semiconductor film 502, form mask 540 with opening.Then, on the surface of semiconductor film 502, apply the nickel acetate solution of the Ni that contains 1～100ppm weight range by spin coating method.Not only can be by top method, and can pass through sputtering method, vapour deposition process or plasma treatment etc. and add catalyst elements.The nickel acetate solution that applies contacts (Fig. 7 A) by the opening of mask 540 with semiconductor film 502.
Then, under the temperature of 500～650 ℃ of scopes, carry out 4～24 hours heat treatment, for example under 570 ℃ temperature, handled 14 hours.This heat treatment forms semiconductor film 530, and wherein shown in solid arrow (Fig. 7 A), the face surface that has been applied in nickel acetate solution has promoted crystallization from it.Not only can be by top method, and can be by for example heat-treating in other method of method shown in the embodiment 3.In addition, can use the element quoted among the embodiment 3 as catalyst elements.
Subsequently, after removing mask 540, as shown in Fig. 7 B, make semiconductor film 530 crystallizations with the laser irradiating device among Fig. 3.In the present embodiment, use and under 532nm (second harmonic), provide 2W, repetition rate to be 80MHz and pulse duration YVO for about 12ps 4Laser.So, by with laser 538 irradiation semiconductor films 530, formed the semiconductor film 531 that degree of crystallinity improves more.
As shown in Fig. 7 B, think that the semiconductor film 531 that uses the catalyst elements crystallization comprises concentration and is approximately 1 * 10 19Atom/cm 3Catalyst elements (herein being Ni).Then, carry out in the semiconductor film 531 the air-breathing of the catalyst elements that exists.
As shown in Fig. 7 C, formed the thick silicon oxide film 532 of 150nm and be used as mask, thereby covered semiconductor film 531.Then, patterning silicon oxide film 532 forms opening, makes the part of semiconductor film 531 be exposed.Then, in semiconductor film 531, add phosphorus, added the zone 533 of phosphorus with formation.When in this state, in nitrogen atmosphere carry out 5～24 hours heat treatment under 550～800 ℃ the temperature, when for example under 600 ℃ temperature, handling 12 hours, the zone 533 of having added phosphorus is as air-breathing position, and the catalyst elements of staying in the semiconductor film 531 is shifted to the air-breathing district 533 that has added phosphorus.
Remove the zone 533 of having added phosphorus by etching, the concentration of catalyst elements can be reduced to 1 * 10 in remaining semiconductor film 531 17Atom/cm 3Or it is lower.Then, removing as behind the silicon oxide film 532 of mask, patterned semiconductor film 531 forms island shape semiconductor tunic 534～536 (Fig. 7 D).Use these island shape semiconductor tunics 534～536 can form various semiconductor elements, TFT typically.Air-breathing method is not limited to the method shown in the present embodiment.Also can use the catalyst elements in other method reduction semiconductor film.
In the present embodiment, the top of semiconductor film has been melted in laser radiation, but does not melt more the bottom near the semiconductor film of substrate one side.Therefore, in more near the bottom of the semiconductor film of substrate one side, stay and be not melted, become nucleus, and the top from the bottom of substrate one side to semiconductor film has promoted crystallization equably by the crystal that uses the catalyst elements crystallization to form.In addition, the easy marshalling of the orientation of crystal.Therefore, compare, prevented that the surface of semiconductor film from becoming coarse with the situation among the embodiment 2.What in addition, can further suppress will to form subsequently is the variation of the property of semiconductor element of representative with TFT.
The attention present embodiment has been explained by heat-treating after having added catalyst elements and has been promoted crystallization, and further improved degree of crystallinity by laser radiation.But the present invention is not limited to this, also can omit heat treatment.Specifically, after having added catalyst elements,, can launch laser and replace heat treatment in order to improve degree of crystallinity.
Present embodiment can with execution mode 1 or 2 or embodiment 1,2 or 3 freely combine.
Embodiment 5
Embodiment 5 has explained that with reference to figure 8 drive circuit and the dot structure of light-emitting device, described light-emitting device are the semiconductor display devices that can use the laser irradiating device among Fig. 3 to make.
In Fig. 8, on substrate 6000, form basement membrane 6001, and on basement membrane 6001, form thin-film transistor 6002 and 6020.Be arranged on thin-film transistor 6002 in the pixel portion comprise island shape semiconductor film 6003, gate electrode 6005 and be inserted in island shape semiconductor film 6003 and gate electrode 6005 between gate insulating film 6004.Be arranged on thin-film transistor 6020 in the drive circuit comprise island shape semiconductor film 6018 and 6019, gate electrode 6021 and be inserted in the island shape semiconductor film and gate electrode 6021 between gate insulating film 6004.
Island shape semiconductor film 6003,6018 and 6019 each all be to use laser irradiating device among Fig. 3 on the direction of channel width scan laser and by crystallization polycrystal semiconductor film., only show two TFT herein, but in drive circuit, provide the TFT and the quilt parallel connection of at least two row * two row to be electrically connected.The part of drive circuit forms with the method described in the execution mode 1 or 2, thereby the variation when having reduced circuit working.Notice that the channel length vertical with channel width dimension is corresponding to forming the length of distinguishing with gate electrode 6021 trench overlapped.
Can use silica, silicon nitride or silicon oxynitride as gate insulating film 6004.In addition, can form gate insulating film 6004 by piling up these materials.For instance, can use at SiO 2On formed the film of SiN as gate insulating film.Gate electrode 6005 by be selected among Ta, W, Ti, Mo, Al and the Cu element or by comprising that alloy material or the compound-material of these elements as its key component forms.In addition, also can use with the polysilicon film of the impurity element of phosphorus for example of having mixed to the semiconductor film of representative as gate electrode 6005.Not only can use the individual layer conducting film, and the lamination that can use a plurality of conducting films is as gate electrode 6005.
First interlayer dielectric 6006 is covered with transistor 6002 and 6020.Above first interlayer dielectric 6006, form second interlayer dielectric 6007 and the 4th interlayer dielectric 6009 successively.First interlayer dielectric 6006 can be individual layer or the lamination be made up of silica, silicon nitride or silicon oxynitride that forms by plasma CVD method or sputtering method.
Second interlayer dielectric 6007 and the 4th interlayer dielectric 6009 can comprise Si-CH by organic resin film, inorganic insulating membrane, for example siloxy group material etc. xThe dielectric film of key and Si-O key forms.In the present embodiment, used the acrylic resin film of non-photosensitivity.
After having formed first electrode 6010, source electrode 6022 and drain electrode 6023, use first electrode 6010, source electrode 6022 and drain electrode 6023 to be etched in the 3rd interlayer dielectric 6008 that forms on the part of second interlayer dielectric 6007 as mask.6008 uses of the 3rd interlayer dielectric are compared with other dielectric film and are difficult to make for example film of the material osmosis of promotion such as water or nitrogen light-emitting component deterioration.Typically, silicon nitride film that preferably use DLC film for example, carbon nitride films, forms by the RF sputter etc.
In Fig. 8, Reference numeral 6017 is connection electrode; 6024 is second electrodes; The 6011st, electroluminescence layer; The 6012nd, third electrode; And the part of having piled up second electrode 6024, electroluminescence layer 6011 and third electrode 6011 is corresponding to light-emitting component 6013.Transistor 6002 is driving transistorss of electric current that control imposes on light-emitting component 6013, and directly is connected with light-emitting component 6013 or is connected in series through other circuit element and light-emitting component 6013.Electroluminescence layer 6011 comprises the individual layer luminescent layer or comprises the laminated construction of the multilayer of luminescent layer.
Above the 4th interlayer dielectric 6009, formed second electrode 6024.Above the 4th interlayer dielectric 6009, form organic resin film 6014 as dykes and dams (bank).Although present embodiment uses organic resin film as dykes and dams, also can use the Si-CH that comprises of inorganic insulating membrane, for example siloxy group material xThe dielectric films of key and Si-O key etc. are as dykes and dams.Organic resin film 6014 has opening portion 6015, and forms light-emitting component 6013 by pile up second electrode 6024, electroluminescence layer 6011 and third electrode 6012 in opening portion 6015.
Above organic resin film 6014 and third electrode 6012, formed diaphragm 6016.The same with the 3rd interlayer dielectric 6008, also use with other dielectric film and compare, be difficult to make the film of material (for example water or the nitrogen) infiltration that promotes the light-emitting component deterioration to form diaphragm 6016.For example, the silicon nitride films that use DLC film, carbon nitride films, formed by the RF sputter etc. are as diaphragm 6016.
Preferably make the marginal portion of the opening portion 6015 of organic resin film 6014 be circle, thereby prevent and organic resin film 6014 partly overlapping electroluminescence layers 6011 perforation.Specifically, the section of organic resin film in this opening portion preferably has the radius of curvature of about 0.2～2 μ m.Under this structure, can improve the electroluminescence layer that will form then and the coverage of third electrode, and prevent the short circuit of 6012 of second electrode 6024 and third electrodes in the hole that can in electroluminescence layer 6011, form.In addition, when the stress of electroluminescence layer 6011 is relaxed, can reduce the defective that what is called that the luminous zone reduces shrinks and improve reliability.
Fig. 8 has shown the embodiment of the just photosensitive acrylic resin of use as organic resin film 6014.As for photosensitive organic resin, have to be exposed to the regional removed eurymeric under for example light, electricity or the energy of ions and to be exposed to the not removed minus in zone under the energy.Can use the minus organic resin film in the present invention.In addition, can use light-sensitive polyimide to form organic resin film 6014.Using minus acrylic acid to form under the situation of organic resin film 6014, the marginal portion shape of cross section picture letter S of opening portion 6015.In the case, the upper rim of opening portion and the radius of curvature in the lower limb are preferably the scope of 0.2～2 μ m.
In second electrode 6024 and the third electrode 6012 one is an anode and another is a negative electrode.
Can use the conductive oxide material of printing opacity to form anode, for example zinc oxide (GZO) of tin indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO) or the gallium that mixed.In addition, can use the tin indium oxide (ITO) (hereinafter being called ITSO) that comprises silica or comprise indium oxide to the silica that has wherein added 2～20% zinc oxide (ZnO).In addition, anode can be to comprise the individual layer that is selected from one or more elements among TiN, ZrN, Ti, W, Ni, Pt, Cr, Ag, the Al etc.; By piling up titanium nitride film and mainly comprising the bilayer that the film of aluminium forms; By piling up titanium nitride film, mainly comprising film formed three layers of the film of aluminium and titanium nitride etc.When using the material different with the conductive oxide material of printing opacity to form anode and from anode one side when luminous, anode is formed and makes it have the thickness that is enough to see through light (preferably about 5～30nm).
Negative electrode can use the metal, alloy, conductive compound or these mixtures of material that all have low work function to form.Specifically, negative electrode can be by alkali metal, for example Li or Cs; Alkaline-earth metal, for example Ca, Sr or Mg; The alloy that comprises these elements, for example Mg:Ag, Al:Li or Mg:In; The compound of these elements, for example CaF 2Or CaN; Perhaps rare earth metal, for example Yb or Er.When in electroluminescence layer 6011, providing electron injecting layer, can use for example conductive layer of Al.When launching the light time from negative electrode one side, negative electrode can be formed by the conductive oxide material of printing opacity, for example the zinc oxide (GZO) of tin indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO) or the gallium that mixed.In addition, can use the tin indium oxide (hereinafter being called ITSO) that comprises silica or form negative electrode the indium oxide that comprises to the silica that has wherein further mixed 2～20% zinc oxide (ZnO).Under the situation of the conductive oxide material that uses this printing opacity, preferably provide electron injecting layer for the follow-up electroluminescence layer that will form 6011.By form thickness be enough to propagates light (preferred about 5～30nm) negative electrode and do not use the conductive oxide material of printing opacity can obtain light from negative electrode one side.In the case, the conducting film that can form printing opacity by the conductive oxide material that uses printing opacity contacts with the top or the bottom of negative electrode, to suppress the square resistance of negative electrode.
Although Fig. 8 has shown the structure of passing substrate 6000 from the light of light-emitting component emission, light-emitting device can have light from the luminous structure of an opposite side with substrate.
After having obtained the light-emitting device shown in Fig. 8, preferred use highly airtight and printing opacity cladding material or diaphragm (laminated film, ultraviolet-curing film etc.) degassing hardly encapsulate (packing) light-emitting device so that it is not exposed in the air.If at inside encapsulation inert atmosphere or in inside hygroscopic material (for example barium monoxide) is set with cladding material, will improves the reliability of light-emitting component.
Although present embodiment has shown the example of light-emitting device as semiconductor display device, the semiconductor display device that is to use manufacture method of the present invention to form is not limited to this.
Present embodiment can with execution mode 1 or 2 or embodiment 1,2,3 or 4 freely combine.
Embodiment 6
Although an example of bottom-emission device has been described in embodiment 5, an example of top emission device is made in explanation in embodiment 6.
At first, above first substrate 401, form basic dielectric film.First substrate 401 is not particularly limited, as long as it is smooth and heat-resisting.Formation by the film formed basement membrane of insulation of for example silicon oxide film, silicon nitride film or silicon oxynitride film as basic dielectric film.
Then, above basic dielectric film, formed semiconductor layer.Use known method (sputtering method, LPCVD method, plasma CVD method etc.) to form semiconductor film with impalpable structure.Then, use first photomask will use the laser irradiating device among Fig. 3 and implemented crystal semiconductor film figure that the known crystallisation procedure does according to execution mode 1 or 2 obtains and change into and have required shape.
In the present embodiment, use the second harmonic of solid-state CW laser first-harmonic to four-time harmonic.Typically, can use Nd:YVO 4The second harmonic (532nm) of laser (first-harmonic is 1064nm) or triple-frequency harmonics (355nm).
Form the semiconductor layer of 25～80nm thick (preferred 30～70nm is thick).To the material of crystal semiconductor film without limits, can use silicon, SiGe (SiGe) alloy etc.
After removing Etching mask, form the gate insulating film that covers semiconductor layer.Form the thick gate insulating film of 1～200nm by plasma CVD method, sputtering method or thermal oxidation method.
Then, above this gate insulating film, form the conducting film of thickness 100～600nm.Form the conducting film of lamination herein, with TaN film and W film by sputtering method.Although conducting film herein is the lamination of TaN film and W film, conducting film is not particularly limited.Can use and be selected from element among Ta, W, Ti, Mo, Al and the Cu, comprise described element as forming conducting film as the alloy material of key component or the individual layer of compound-material or their lamination.Alternatively, also can use with to the polysilicon film of the impurity element of phosphorus for example of wherein having mixed semiconductor film as representative.
Then, use second photomask to form Etching mask and carry out etching by dry etching or wet etching.Form the gate electrode of TFT 404 by etching conductive film in etching process.
After removing Etching mask, use the 3rd photomask to form new Etching mask, and in order to form the n channel TFT that does not show among the figure, enforcement is added on the first doping step that the impurity element (phosphorus or arsenic typically) of n type conductivity is given in doping in semiconductor, to form low concentration region.Etching mask cover the zone will become the p channel TFT and conductive layer near.According to the first doping step, pass dielectric film and implement to mix, to form n type low concentration impurity district.Although use a plurality of TFT to drive a light-emitting component, when only using a p type TFT to come driven light-emitting element, or not to need the doping step especially.
After removing Etching mask, use the 4th photomask to form new Etching mask, and implement to be added on the second doping step that the impurity element (boron typically) of p type conductivity is given in doping in semiconductor, to form area with high mercury.According to the second doping step, pass gate insulating film and implement to mix, to form p type high concentration impurities district.
Then, use the 5th photomask to form new Etching mask, and in order to form the n channel TFT that does not show among the figure, implement to be added on the 3rd doping step that the impurity element (P (phosphorus) or As (arsenic) typically) of n type conductivity is given in doping in semiconductor, to form area with high mercury.Etching mask cover the zone will become the p channel TFT and conductive layer near.According to the 3rd doping step, pass dielectric film and implement to mix, to form n type high concentration impurities district.
After this, after having removed Etching mask and having formed hydrogeneous dielectric film, with impurity element activation and the hydrogenation that adds in the semiconductor layer.Use the oxidized silicon nitride film (SiNO film) that obtains by the PCVD method as hydrogeneous dielectric film.
Then, formation will become the planarization film 410 of second interlayer dielectric.Use inorganic material (silica, silicon nitride, silicon oxynitride etc.), photosensitive or non-photosensitivity organic material (polyimides, acrylic acid, polyamide, polyimide amide, resist or benzocyclobutene), their lamination etc. to form planarization film 410.In addition, can use by cladding process obtain by the SiO that contains alkyl xFilm formed dielectric film for example uses silica glass, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogen silsesquioxanes polymer, hydrogenation alkyl silsesquioxane polymer etc. as the another kind of film as planarization film.As the example of silica alkyl polymer, #PSB-K1 that Inc. makes and PSB-K31 and by Catalysts ﹠amp are for example arranged by Toray Industries; Chemicals Industries Co., the ZRS-5PH that Ltd. makes etc. is used for the coating material of dielectric film.
Then, by using the 6th mask in interlayer dielectric, to form contact hole.After removing the 6th mask and forming conducting film (lamination of TiN film, Al (C+Ni) alloy film and TiN film), use the 7th mask to carry out etching, to form lead (source electrode of TFT and leak routing, current supply line etc.).
Then, remove the 7th mask and form the 3rd interlayer dielectric 411.The 3rd interlayer dielectric 411 is to use and has wherein disperseed the photosensitive of black colorant or non-photosensitivity organic material, obtains by cladding process.In the present embodiment, use the interlayer dielectric that covers light to improve contrast and absorption stray light.In order to protect the 3rd interlayer dielectric 411, can pile up the oxidized silicon nitride film (SiNO film) that obtains by the PCVD method in the above as the 4th interlayer dielectric.After having formed the 4th interlayer dielectric, preferably by in follow-up step with after first electrode patternization, use first electrode optionally to remove the 4th interlayer dielectric as mask.
Then, use the 8th mask in the 3rd interlayer dielectric 411, to form contact hole.
After having formed reflective conductive film and nesa coating, use the 9th mask to carry out patterning, to obtain the lamination of reflecting electrode 412 and transparency electrode 413.Use Ag, Al or Al (C+Ni) alloy film to form reflecting electrode 412.For instance, can use transparent conductive material to form transparency electrode 413, except tin indium oxide (ITO), for example comprise the tin indium oxide (ITSO) of Si element in addition or wherein in indium oxide, mixed the IZO (indium zinc oxide) of 2%～20% zinc oxide (ZnO).
Then, use the tenth mask forms becomes dykes and dams by the marginal portion that covers reflecting electrode 412 and transparency electrode 413 insulator 419.Use photosensitive or non-photosensitivity organic material (polyimides, acrylic acid, polyamide, polyimide amide, resist or benzocyclobutene) or the sog film (SiO that for example comprises alkyl xFilm) forming thickness is the insulator 419 of 0.8～1 μ m.
Then, use the formation of vapour deposition process or cladding process to contain the layer 414 of organic compound.In order to obtain full-color display, optionally form the layer 414 that contains organic compound, form R, G and three kinds of pixels of B.
Then, above the layer 414 that contains organic compound, form the thick transparency electrode of 10～800nm 415, just the negative electrode of organic illuminating element.Except tin indium oxide (ITO), for example can also use the tin indium oxide (ITSO) that contains the Si element or be included in the IZO (indium zinc oxide) that has mixed 2%～20% zinc oxide (ZnO) in the indium oxide to form transparency electrode 415.
So formed light-emitting component.
Then, formation is used for preventing that the protective clear layer 405 and 416 of sealing infiltration comes covering luminous element.Can use silicon nitride film, silicon oxide film, silicon oxynitride film (SiNO film (ratio of components N＞O) or SiON film (ratio of components O＞N)), to comprise carbon and wait as the film (for example DLC film or CN film) of key component and form protective clear layer 405 and 416, can obtain described layer by sputtering method or CVD method.
Then, use the encapsulant that comprises clearance material (filler (fiber rod), fine particle (for example silicon dioxide spacer thing) etc.) that second substrate 403 and first substrate 401 are bonded to each other, thereby between substrate, keep the gap.Fill filler 417 between a pair of substrate, this filler 417 is the epoxy resin or the thermosetting epoxy resin of ultraviolet curing typically.In addition, each glass substrate, quartz substrate or plastic that all has a light transmitting property can be used for second substrate 403.With substrate between exist the situation in space (inert gas) to compare, by substrate between fill transparent filler (reflectivity is about 1.50) and can improve whole transmissivity.
As shown in Fig. 9 A, according to the transparency electrode in the light-emitting component of present embodiment 415, protective clear layer 416 and 405 and filler 417 form by light transmissive material, thereby upwards luminous shown in outlined arrow.
Hereinafter, make the example of two light-emitting devices with reference to figure 9B explanation.
At first above first light-transmissive substrates 501, form basic dielectric film.First substrate 501 is not particularly limited, so long as light-transmissive substrates gets final product.
Then, above basic dielectric film, form semiconductor layer.Form the gate insulating film that covers semiconductor layer and above this gate insulating film, form gate electrode.
Then, suitably form n type low concentration impurity district, p type high concentration impurities district and n type high concentration impurities district etc. by mixing.After having removed Etching mask and having formed hydrogeneous dielectric film (printing opacity interlayer dielectric), with impurity element activation and the hydrogenation that adds in the semiconductor layer.
Then, formation will become the printing opacity planarization film 510 of second interlayer dielectric.Use inorganic material (silica, silicon nitride, silicon oxynitride etc.), photosensitive or non-photosensitivity organic material (polyimides, acrylic acid, polyamide, polyimide amide, resist or benzocyclobutene), their lamination etc. to form printing opacity planarization film 510.
After in interlayer dielectric, having formed contact hole, form conducting film (lamination of TiN film, Al (C+Ni) alloy film and TiN film), optionally implement etching then, form wiring (source of TFT and leak routing, power supply wiring etc.).
Then, form the 3rd interlayer dielectric 511.Use is by the SiO that contains alkyl xFilm formed dielectric film forms the 3rd interlayer dielectric 511, and it can obtain by cladding process.In order to protect the 3rd interlayer dielectric 511, can pile up the oxidized silicon nitride film (SiNO film) that obtains by the PCVD method as the 4th interlayer dielectric.After having formed the 4th interlayer dielectric, preferably by in follow-up step with after first electrode patternization, use first electrode optionally to remove the 4th interlayer dielectric as mask.
In the 3rd interlayer dielectric 4511, form contact hole.
After having formed nesa coating, obtain transparency electrode 513 by patterning.For instance, the transparent conductive material that use has high work function (4.0eV or higher) forms transparency electrode 513, except tin indium oxide (ITO), for example comprise the tin indium oxide (ITSO) of Si element in addition or wherein in indium oxide, mixed the IZO (indium zinc oxide) of 2%～20% zinc oxide (ZnO).
Then, use mask to form the insulator 519 of the marginal portion of covering transparent electrode 513.
Use the formation of vapour deposition process or cladding process to contain the layer 514 of organic compound.
Then, form the thick transparency electrode of 10～800nm 515 at the layer that contains organic compound on 514, just the negative electrode of organic illuminating element.Except tin indium oxide (ITO), the IZO (indium zinc oxide) that for example can also use the tin indium oxide (ITSO) that contains the Si element or wherein mixed 2%～20% zinc oxide (ZnO) in indium oxide forms transparency electrode 515.
Then, formation is used for preventing that the protective clear layer 505 and 516 of sealing infiltration comes covering luminous element.Then, use the encapsulant that comprises clearance material that second substrate 503 and first substrate 501 are bonded to each other, thereby between substrate, keep the gap.In addition, each glass substrate, quartz substrate or plastic that all has a light transmitting property can be used for second substrate 503.
As shown in Fig. 9 B, transparency electrode 515 in the light-emitting component that so obtains and filler 517 form by luminescent material, thus shown in outlined arrow upwards and luminous downwards.
Then, provide blooming (polarization plates or circularly polarizing plate) 506 to improve contrast.
For instance, substrate 501 possesses blooming 507 (setting gradually quarter wave plate and polarization plates from substrate one side) and second substrate 503 possesses blooming 506 (setting gradually quarter wave plate and polarization plates from substrate one side).
In addition, as another example, substrate 501 possesses blooming 507 (setting gradually quarter wave plate, half-wave plate and polarization plates from substrate one side) and second substrate 503 possesses blooming 506 (setting gradually quarter wave plate, half-wave plate and polarization plates from substrate one side).
Therefore, according to the present invention, can provide polarization plates, circularly polarizing plate or their combination according to two light-emitting devices.Therefore, can realize clearly black display and improved contrast.In addition, circularly polarizing plate can prevent reverberation.
Present embodiment can with execution mode 1 or 2 or embodiment 1,2,3,4 or 5 freely combine.
Embodiment 7
The installation FPC in the EL display panel or the example of drive IC are being made in explanation according to the foregoing description in embodiment 7.
Figure 10 is the vertical view as the light-emitting device of example, wherein FPC 1209 is appended on four terminal parts 1208.Above substrate 1210, form the pixel portion 1202 comprise light-emitting component and TFT, comprise the gate side drive circuit 1203 of TFT and comprise the source side drive circuit 1201 of TFT.When each forms by the semiconductor film with crystalline texture when the active layer of TFT, can on a substrate, form these circuit.Therefore, can produce the EL display floater of realizing system (system-on-panel) on the panel.
The protected film of substrate 1210 parts except that contact portion covers and is provided with the basic unit that comprises the material with photo-catalysis function on diaphragm.
Be provided with clip pixel portion two bonding pads 1207 so that second electrode contact lower wire of light-emitting component.The TFT that provides in first electrode that makes light-emitting component and the pixel portion is electrically connected.
By seal substrate 1204 being fixed on the substrate 1210 round the encapsulant 1205 of pixel portion and drive circuit with the circumjacent filler of encapsulant.In addition, can also use the structure of having filled the filler that comprises transparent desiccant.Can with in the pixel portion overlapping areas drier be set.
The structure that shows among Figure 10 is applicable to the light-emitting device (for example diagonal-size is 4.3 inches) of other large-size of XGA level; But the present invention is not particularly limited.Can the part of drive IC as drive circuit be installed by the COG pattern.
Because it has longer limit, drive IC externally size aspect is better than the IC chip.When using long limit to form the drive IC of 15～80mm, compare with the situation of using the IC chip, the negligible amounts corresponding to the needed drive IC of pixel portion is installed, thereby has been improved fabrication yield.When on glass substrate, having formed drive IC, because to the shape of female substrate without limits, productivity ratio can not incur loss.Compare with the situation of taking out the IC chip from circular wafer, this is very big advantage.
In addition, can use the TAB pattern, and in the case, can bonding a plurality of carrier bands and drive IC can be installed on carrier band.The same under the situation of the COG pattern that coexists, a drive IC can be installed on a carrier band.In the case, the preferred bonding together sheet metal that will be used for fixing drive IC waits and improves intensity.
Present embodiment can with execution mode 1 or 2 or embodiment 1,2,3,4,5 or 6 freely combine.
Embodiment 8
Can provide the example of following device conduct: camera according to display unit of the present invention and electronic installation, for example video camera or digital camera, goggle-type display (head mounted display), navigation system, audio reproducing apparatus (for example automobile audio or audible component), laptop computer, game machine, portable data assistance (mobile computer for example, cell phone, portable game machine or e-book), the image-reproducing means (specifically can play the device of recording medium, for example DVD (DVD) and device) that possesses recording medium with display unit that can display image, video-audio both-way communication device, general remote control etc.Each has shown the instantiation of electronic installation Figure 11 A and 11B and Figure 12 A～12E.
Figure 11 A and 11B have shown digital camera, and it comprises main body 2101, display part 2102, imaging moiety 2103, operation keys 2104, shutter 2106 etc.According to the present invention, can realize having the digital camera of the display part 2102 that does not show irregular (mura).
Figure 12 A has shown the large scale display unit with 22～50 inches large-screens, and it comprises shell 2001, support 2002, display part 2003, speaker portion 2004, image section 2005, video input terminal 2006 etc.Notice that display unit comprises all types display unit that is used for the information demonstration, for example is used for personal computer, is used for TV broadcast reception etc.According to the present invention, even under situation, also can realize suppressing to show irregular (mura) or reduce the large scale display unit that drive circuit works changes with 22～50 inches large-screens.
Figure 12 B has shown laptop computer, and it comprises main body 2201, shell 2202, display part 2203, keyboard 2204, external connection port 2205, mouse 2206 etc.According to the present invention, can realize suppressing to show irregular (mura) or reduce the laptop computer that drive circuit works changes.
Figure 12 C has shown to possess recording medium portable image transcriber (specifically, DVD player), it comprises main body 2401, shell 2402, display part A 2403, display part B 2404, recording medium (for example DVD) loading station 2405, operation keys 2406, speaker portion 2407 etc.Display part A 2403 main displays image information, the main character display information of display part B2404.Notice that the portable image transcriber that possesses recording medium comprises home game machine etc.According to the present invention, can realize suppressing to show irregular (mura) or reduce the image-reproducing means that drive circuit works changes.
Figure 12 D is the perspective view of portable data assistance, and Figure 12 E has shown the perspective view of representing to use it for the cell phone folded state.In Figure 12 D, as operation keyboard, the user hits operation keys 2706a and hits operation keys 2706b operation of cellular telephone with his/her left hand indication by giving directions with his/her right hand.According to the present invention, can realize suppressing to show irregular (mura) or reduce the portable data assistance that drive circuit works changes.
As shown in Figure 12 E, when cell phone is folding, the user control main body 2701 and shell 2702 on the other hand and use that audio frequency importation 2704, audio output part divide 2705, operation keys 2706c, antenna 2708 etc.
Each comprises portable data assistance shown in Figure 12 D and the 12E high definition display part 2703a of main level ground display image and character and and vertically shows their high definition display part 2703b.
As mentioned above, by using, can realize various electronic installations in execution mode 1 and 2 and embodiment 1～7 manufacture method or the structure in any.

Claims (23)

1. semiconductor device, wherein on have the substrate of insulating surface, be formed with semiconductive thin film, and with fusing and cool off this semiconductive thin film and make it crystallization again, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer with continuous-wave laser beam irradiation;
Wherein said a plurality of thin-film transistor is in parallel to be electrically connected, and
Wherein the summation of WC and WS is less than the width LP of continuous-wave laser beam, wherein WC be in a plurality of thin-film transistors the channel formation region width and, and WS be between channel formation region the interval and.
2. semiconductor device, wherein on have the substrate of insulating surface, be formed with semiconductive thin film, and with repetition rate more than or equal to 10MHz and smaller or equal to the irradiation of the pulse laser beam of 100GHz with fusing and cool off this semiconductive thin film and make it crystallization again, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer;
Wherein said a plurality of thin-film transistor is in parallel to be electrically connected, and
Wherein the summation of WC and WS is less than the width LP of pulse laser beam, wherein WC be in a plurality of thin-film transistors the channel formation region width and, and WS be between channel formation region the interval and.
3. semiconductor device, wherein on have the substrate of insulating surface, be formed with semiconductive thin film, and with fusing and cool off this semiconductive thin film and make it crystallization again, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer with continuous-wave laser beam irradiation;
At least two thin-film transistors in wherein said a plurality of thin-film transistor are in parallel to be electrically connected, and
Wherein W1+W2+W3 and, be the channel formation region in the first film transistor width W 1, the channel formation region in the first film transistor and and second thin-film transistor that forms of the transistorized raceway groove adjacent position of the first film in channel formation region between interval W2 and width W 3 sums of the channel formation region in second thin-film transistor, less than the width LP of continuous-wave laser beam.
4. semiconductor device, wherein on have the substrate of insulating surface, be formed with semiconductive thin film, and with repetition rate more than or equal to 10MHz and smaller or equal to the irradiation of the pulse laser beam of 100GHz with fusing and cool off this semiconductive thin film and make it crystallization again, and described device comprises that each all uses a plurality of thin-film transistors of semiconductive thin film as active layer;
At least two thin-film transistors in wherein said a plurality of thin-film transistor are in parallel to be electrically connected, and
Wherein W1+W2+W3 and, be the channel formation region in the first film transistor width W 1, the channel formation region in the first film transistor and and second thin-film transistor that forms of the transistorized raceway groove adjacent position of the first film in channel formation region between interval W2 and width W 3 sums of the channel formation region in second thin-film transistor, less than the width LP of pulse laser beam.
5. semiconductor device as claimed in claim 1, wherein said a plurality of thin-film transistors are to be set up with the interval that equates.
6. semiconductor device as claimed in claim 2, wherein said a plurality of thin-film transistors are to be set up with the interval that equates.
7. semiconductor device as claimed in claim 3, wherein said a plurality of thin-film transistors are to be set up with the interval that equates.
8. semiconductor device as claimed in claim 4, wherein said a plurality of thin-film transistors are to be set up with the interval that equates.
9. semiconductor device as claimed in claim 1, wherein said semiconductor device are one of the camera of portable data assistance, for example video camera or digital camera and personal computer.
10. semiconductor device as claimed in claim 2, wherein said semiconductor device are one of the camera of portable data assistance, for example video camera or digital camera and personal computer.
11. semiconductor device as claimed in claim 3, wherein said semiconductor device are one of the camera of portable data assistance, for example video camera or digital camera and personal computer.
12. semiconductor device as claimed in claim 4, wherein said semiconductor device are one of the camera of portable data assistance, for example video camera or digital camera and personal computer.
13. semiconductor device as claimed in claim 1, wherein said semiconductor device are one of video-audio both-way communication device and general remote control.
14. semiconductor device as claimed in claim 2, wherein said semiconductor device are one of video-audio both-way communication device and general remote control.
15. semiconductor device as claimed in claim 3, wherein said semiconductor device are one of video-audio both-way communication device and general remote control.
16. semiconductor device as claimed in claim 4, wherein said semiconductor device are one of video-audio both-way communication device and general remote control.
17. a method of making semiconductor device, it comprises:
On insulating surface, form semiconductor film;
With the described semiconductor film of laser beam flying, make described semiconductor film crystallization;
By with crystallization the semiconductor film patterning, to form first and second semiconductor islands at least; And
Use described first semiconductor island to form the first film transistor as first channel formation region at least and use described second semiconductor island to form second thin-film transistor as second channel formation region at least,
Wherein the summation of WC and WS is less than the width LP of laser beam, wherein WC be the first and second channel formation region width and, and WS is the interval between first and second channel formation regions.
18. method as claimed in claim 17, wherein said laser beam are the CW laser beams.
19. method as claimed in claim 17, wherein said laser beam are repetition rates more than or equal to 10MHz and smaller or equal to the pulse laser beam of 100GHz.
20. method as claimed in claim 17, it also is included in the step that makes the semiconductor film crystallization before the laser beam flying semiconductor film by heating.
21. method as claimed in claim 17, each Width of wherein said first and second channel formation regions is vertical with the scanning direction of laser beam.
22. method as claimed in claim 17, wherein said first and second thin-film transistors are in parallel to be electrically connected.
23. method as claimed in claim 17, wherein said semiconductor film comprises amorphous silicon.
CNB2005800258366A 2004-07-30 2005-07-25 Semiconductor device Expired - Fee Related CN100524659C (en)

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CN113164883A (en) * 2018-11-28 2021-07-23 3M创新有限公司 UV treatment of films and resulting films

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US8431961B2 (en) 2011-02-03 2013-04-30 Micron Technology, Inc. Memory devices with a connecting region having a band gap lower than a band gap of a body region

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US6133076A (en) * 1999-08-24 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113164883A (en) * 2018-11-28 2021-07-23 3M创新有限公司 UV treatment of films and resulting films
CN113164883B (en) * 2018-11-28 2023-05-02 3M创新有限公司 UV treatment of films and resulting films

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