CN1979313A - Base-board and liquid crystal display adopting same - Google Patents
Base-board and liquid crystal display adopting same Download PDFInfo
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- CN1979313A CN1979313A CN 200510102309 CN200510102309A CN1979313A CN 1979313 A CN1979313 A CN 1979313A CN 200510102309 CN200510102309 CN 200510102309 CN 200510102309 A CN200510102309 A CN 200510102309A CN 1979313 A CN1979313 A CN 1979313A
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- pixel electrode
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Abstract
The invention relates to a substrate and a LCD using it. And it comprises plural pixel electrodes and transistors connected with the pixel electrodes, where the pixel electrode comprises a bottom end and a bending end connected with the bottom end, and the bottom end and the bending end define a region with higher light penetration ratio and a region with lower light penetration ratio, and the transistor is located in the latter; and the invention has higher light penetration ratio.
Description
[technical field]
The present invention relates to a kind of substrate and adopt the LCD of this substrate.
[background technology]
Along with the development of display technique, LCD since its advantage light, thin and flicker free be used widely in each field.But common visual angle of liquid crystal display is less, for obtaining bigger visual angle, industry has proposed various wide viewing angle technology, changes technology (InPlate Switch as in-plane, IPS), (Mutidomain VerticalAlignment MVA) waits the wide viewing angle technology to the multi-zone vertical alignment nematic technology.
Please consult Fig. 1 and Fig. 2 together, wherein Fig. 1 is a kind of synoptic diagram of a pixel region of prior art plane inner switching type LCD, and Fig. 2 is electric field and the liquid crystal deflecting element enlarged diagram that the II district is produced among Fig. 1 when applying voltage.This pixel region 10 comprise data line 115, with the vertical substantially gate line 113 of data line 115, with the substantially parallel concentric line 135 of data line 115, thin film transistor (TFT) (Thin Film Transistor, TFT) 120, public electrode 133 and pixel electrode 131.This public electrode 133 comprises public electrode curved end 133a and public electrode bottom 133b, and this pixel electrode 131 comprises pixel electrode curved end 131a and pixel electrode bottom 131b.This public electrode 133 is connected with this concentric line 135, and this pixel electrode curved end 131a and public electrode curved end 133a are parallel to each other and are staggered, and becomes the folding bar shaped.
This thin film transistor (TFT) 120 is arranged on this data line 115 and these gate line 113 intersections, and is positioned at the obtuse angles beta that this pixel electrode bottom 131b is become with pixel electrode curved end 131a tail end
1The place.This thin film transistor (TFT) 120 comprises the grid (not indicating) that is connected with this gate line 113, the source electrode (not indicating) that is connected with this data line 115 and the drain electrode (not indicating) that is connected with this pixel electrode 131.
Pixel electrode curved end 131a is parallel with public electrode curved end 133a.When applying voltage, pixel electrode 131 and public electrode 133 produce an electric field 190.The obtuse angles beta that become with pixel electrode curved end 131a tail end at this pixel electrode bottom 131b this moment
1And the sharp angle that become with pixel electrode curved end 131a tail end of this pixel electrode bottom 131b
1Rotation torsional deformation, wherein α appear in electric field on every side
1+ β
1=π.When applying voltage, be in liquid crystal molecule 130a in the parallel electric field zone with to be in the liquid crystal molecule 130b sense of rotation of distortion in the electric field region opposite, the orientation of the liquid crystal in promptly being in parallel electric field and twisting electric field is different, and the distortion electric field region produces blanking bar thus, causes that light transmittance reduces.These defectives also can influence the response characteristic of liquid crystal layer, make the viewing area remaining image occur.Sharp angle
1The variation of electric field on every side is very fast, and changes bigger; And in obtuse angles beta
1Because space is bigger, change less on every side.This mutation difference of electric field causes this sharp angle
1With obtuse angles beta
1The difference of ambient light penetrance: sharp angle
1The ambient light penetrance is than obtuse angles beta
1The ambient light penetrance is much lower.This thin film transistor (TFT) 120 is placed the higher obtuse angles beta of light transmission rate
1The place makes that this LCD light transmittance is lower.
[summary of the invention]
Be used for the lower defective of light transmittance for overcoming prior art, the substrate that provides a kind of light transmittance higher is provided.
A kind of LCD that adopts aforesaid substrate also is provided.
A kind of substrate, it comprises a plurality of pixel electrodes and the transistor that is electrically connected with this pixel electrode, this pixel electrode comprises a bottom and the curved end that is connected with this bottom, the infall of this curved end and this bottom comprises that a light transmittance upper zone and a light penetrate the lower region, and this transistor is positioned at this light transmittance lower region.
A kind of LCD, it comprises first substrate, second substrate that is oppositely arranged and is positioned at liquid crystal layer between this first substrate and second substrate, this first substrate comprises a plurality of pixel electrodes and the transistor that is electrically connected with this pixel electrode, this pixel electrode comprises a bottom and the curved end that is connected with this bottom, this curved end and this bottom define a light transmittance upper zone and a light transmittance lower region, and this transistor is positioned at this light transmittance lower region.
Compared with prior art, in the LCD of aforesaid substrate and this substrate of employing, transistor is arranged on the lower zone of light transmission rate, and thin film transistor (TFT) itself is opaque, lower regional light tight of the light transmission rate that this transistor covers owing to the transmittance of light transmission rate lower region itself is lower, is arranged on transistor herein, can effectively utilize the lower zone of light transmittance, thereby improve the light transmittance of this pixel region.
[description of drawings]
Fig. 1 is a kind of synoptic diagram of a pixel region of prior art LCD.
Fig. 2 is electric field and the liquid crystal deflecting element enlarged diagram that the II district is produced among Fig. 1 when applying voltage.
Fig. 3 is the synoptic diagram of LCD first embodiment of the present invention.
Fig. 4 is the synoptic diagram of a pixel region of LCD first embodiment of the present invention.
Fig. 5 is electric field and the liquid crystal deflecting element enlarged diagram that the V district is produced among Fig. 4 when applying voltage.
Fig. 6 is the synoptic diagram of a pixel region of LCD second embodiment of the present invention.
Fig. 7 is the synoptic diagram of a pixel region of LCD the 3rd embodiment of the present invention.
[embodiment]
LCD first embodiment of the present invention is please consulted Fig. 3, Fig. 4 and Fig. 5 together, and this LCD 4 comprises first substrate 41, second substrate 43 and the liquid crystal layer 42 between this first substrate 41 and second substrate 43.This first substrate 41 comprises pixel electrode 431, public electrode 433 and a plurality of pixel region.Wherein Fig. 4 is the synoptic diagram of a pixel region; Fig. 5 is electric field and the liquid crystal deflecting element enlarged diagram that the V district is produced among Fig. 4 when applying voltage.In this pixel region 40, comprise data line 415, with the vertical substantially gate line 413 of data line 415, with the substantially parallel concentric line 435 of data line 415, thin film transistor (TFT) (Thin Film Transistor, TFT) 420, public electrode 433 and pixel electrode 431.This public electrode 433 comprises public electrode bottom 433b and the public electrode curved end 433a that gives prominence to from this public electrode bottom 433b.This pixel electrode 431 comprises pixel electrode bottom 431b and the pixel electrode curved end 431a that gives prominence to from this pixel electrode bottom 431b.This public electrode 433 is connected with this concentric line 435, and this pixel electrode curved end 431a and public electrode curved end 433a are parallel to each other and are staggered, and becomes the folding bar shaped.
This thin film transistor (TFT) 420 is arranged on this data line 415 and these gate line 413 intersections, and is positioned at the sharp angle that this pixel electrode bottom 431b is become with pixel electrode curved end 431a tail end
4The place.This thin film transistor (TFT) 420 comprises the grid (not indicating) that is connected with this gate line 413, the source electrode (not indicating) that is connected with this data line 415 and the drain electrode (not indicating) that is connected with this pixel electrode 431.
Pixel electrode curved end 431a is parallel with public electrode curved end 433a.When applying voltage, pixel electrode 431 and public electrode 433 produce an electric field 490.The obtuse angles beta that become with pixel electrode curved end 431a tail end at this pixel electrode bottom 431b this moment
4And the sharp angle that become with pixel electrode curved end 431a tail end of this pixel electrode bottom 431b
4The rotation torsional deformation appears in electric field on every side.Be in liquid crystal molecule 430a in the parallel electric field zone when applying voltage with to be in the liquid crystal molecule 430b sense of rotation of distortion in the electric field region opposite, the orientation that promptly is in the liquid crystal in parallel electric field and the distortion electric field is different, twists electric field region and produces blanking bar thus.
But, because sharp angle
4The variation of electric field on every side is very fast, and changes bigger; And in obtuse angles beta
4On every side, because space is bigger, electric field change is less.This mutation difference of electric field causes sharp angle
4With obtuse angles beta
4The difference of ambient light penetrance: sharp angle
4The ambient light penetrance is than obtuse angles beta
4The ambient light penetrance is much lower.In this pixel region 40, thin film transistor (TFT) 420 is arranged on sharp angle
4The place, and thin film transistor (TFT) 420 is own opaque, the sharp angle that this thin film transistor (TFT) 420 covers
4The angle near zone is light tight, because sharp angle
4Transmittance itself is lower on every side, and thin film transistor (TFT) 420 is arranged on herein, before thin film transistor (TFT) 420 is arranged on obtuse angles beta
4The place can effectively utilize the transmittance lower region, thereby improve the light transmittance of this pixel region.
Seeing also Fig. 6, is the synoptic diagram of a pixel region of LCD second embodiment of the present invention.This pixel region 60 is with the difference of pixel region 40: in this pixel region 60, pixel electrode and public electrode are arc, intersect the tangent line and this pixel electrode bottom 631b formation sharp angle of this pixel electrode curved end 631a that does in the place at this pixel electrode bottom 631b and pixel electrode curved end 631a
6And obtuse angles beta
6Thin film transistor (TFT) is arranged on sharp angle
6The place.
Seeing also Fig. 7, is the cut-open view of a pixel region of LCD the 3rd embodiment of the present invention.This pixel region 70 is with the difference of pixel region 40: in this pixel region 70, pixel electrode and public electrode are waveform, intersect the tangent line and this pixel electrode bottom 731b formation sharp angle of this pixel electrode curved end 731a that does in the place at this pixel electrode bottom 731b and pixel electrode curved end 731a
7And obtuse angles beta
7Thin film transistor (TFT) is arranged on sharp angle
7The place.
Claims (7)
1. substrate, it comprises a plurality of pixel electrodes and the transistor that is electrically connected with this pixel electrode, this pixel electrode comprises a bottom and the curved end that is connected with this bottom, this curved end and this bottom define a light transmittance upper zone and a light penetrates the lower region, it is characterized in that: this transistor is positioned at this light transmittance lower region.
2. substrate as claimed in claim 1 is characterized in that: this light transmittance upper zone and this light transmittance lower region lay respectively at this curved end both sides.
3. substrate as claimed in claim 1 is characterized in that: this transistor is a thin film transistor (TFT).
4. substrate as claimed in claim 1 is characterized in that: the curved end of this pixel electrode is the folding bar shaped.
5. substrate as claimed in claim 1 is characterized in that: the curved end of this pixel electrode is arc.
6. substrate as claimed in claim 1 is characterized in that: the curved end of this pixel electrode is a waveform.
7. LCD, it comprises first substrate, second substrate and the liquid crystal layer between this first substrate and second substrate that is oppositely arranged, this first substrate comprises a plurality of pixel electrodes and the transistor that is electrically connected with this pixel electrode, this pixel electrode comprises a bottom and the curved end that is connected with this bottom, the infall of this curved end and this bottom comprises a light transmittance upper zone and a light transmittance lower region, it is characterized in that: this first substrate is any described substrate in the claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510102309 CN1979313A (en) | 2005-12-07 | 2005-12-07 | Base-board and liquid crystal display adopting same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510102309 CN1979313A (en) | 2005-12-07 | 2005-12-07 | Base-board and liquid crystal display adopting same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1979313A true CN1979313A (en) | 2007-06-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510102309 Pending CN1979313A (en) | 2005-12-07 | 2005-12-07 | Base-board and liquid crystal display adopting same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1979313A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103295A (en) * | 2009-12-18 | 2011-06-22 | 三星电子株式会社 | Liquid crystal display device |
| WO2016078050A1 (en) * | 2014-11-18 | 2016-05-26 | 深圳市华星光电技术有限公司 | Array substrate and liquid crystal display panel |
-
2005
- 2005-12-07 CN CN 200510102309 patent/CN1979313A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103295A (en) * | 2009-12-18 | 2011-06-22 | 三星电子株式会社 | Liquid crystal display device |
| US8804081B2 (en) | 2009-12-18 | 2014-08-12 | Samsung Display Co., Ltd. | Liquid crystal display device with electrode having opening over thin film transistor |
| CN102103295B (en) * | 2009-12-18 | 2016-02-10 | 三星显示有限公司 | Liquid crystal display device |
| US9664968B2 (en) | 2009-12-18 | 2017-05-30 | Samsung Display Co., Ltd. | Liquid crystal display device |
| US10488726B2 (en) | 2009-12-18 | 2019-11-26 | Samsung Display Co., Ltd. | Liquid crystal display device |
| US11150529B2 (en) | 2009-12-18 | 2021-10-19 | Samsung Display Co., Ltd. | Liquid crystal display device |
| US11803090B2 (en) | 2009-12-18 | 2023-10-31 | Samsung Display Co., Ltd. | Liquid crystal display device |
| WO2016078050A1 (en) * | 2014-11-18 | 2016-05-26 | 深圳市华星光电技术有限公司 | Array substrate and liquid crystal display panel |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |