CN1975992A - Semiconductor device fabrication method and electronic device fabrication method - Google Patents
Semiconductor device fabrication method and electronic device fabrication method Download PDFInfo
- Publication number
- CN1975992A CN1975992A CN 200610146405 CN200610146405A CN1975992A CN 1975992 A CN1975992 A CN 1975992A CN 200610146405 CN200610146405 CN 200610146405 CN 200610146405 A CN200610146405 A CN 200610146405A CN 1975992 A CN1975992 A CN 1975992A
- Authority
- CN
- China
- Prior art keywords
- film
- manufacture method
- semiconductor device
- semiconductor layer
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention provides a semiconductor device fabrication method capable of reducing the thermal load on the substrate. The present invention also provides a semiconductor device fabrication method capable of improving the characteristics of a semiconductor element. The semiconductor device fabrication method according to the present invention comprises a step of thermally processing a semiconductor layer that is deposited on a substrate by using, as a heat source, the flame of a gas burner that uses a mixed gas of hydrogen and oxygen as fuel. As a result of thermal processing, the semiconductor layer is re-crystallized and an oxide film is formed on the surface of the semiconductor layer. The oxide film can be used as a gate insulation film and a capacitive insulation film.
Description
Technical field
The present invention relates to the manufacture method of semiconductor device and the manufacture method of electronic equipment.
Background technology
In the past, utilizing CVD (chemical vapor deposition, chemical vapour deposition (CVD)) in the crystallization method that recrystallizes of the silicon of realization film forming on substrate such as method, have the high-temperature heat treatment of utilizing 600～1000 ℃ the solid state growth method, carry out the laser annealing method of excimer laser irradiation, with hot plasma as hot plasma gunite (patent documentation 1, non-patent literature 1) of thermal source etc.
In addition, as on the silicon fiml that recrystallizes, forming oxide-film, adopting thermal oxidation embrane method (dry-oxygen oxidation, wet oxidation, steam oxidation, hydrogen burning oxidation), CVD method (TEOS method, PECVD method), sputtering method etc. with method as dielectric film always.
As the membranous method of the oxide-film that improve to form, known useful high-pressure water vapor annealing method is handled the method (for example, with reference to patent documentation 2～4 etc.) of oxide-film.
Patent documentation 1: the spy opens flat 11-145148 communique
Patent documentation 2: the spy opens flat 6-13407 communique
Patent documentation 3: the spy opens flat 11-135492 communique
Patent documentation 4: the spy opens flat 4-284630 communique
Non-patent literature 1:Crystallization of Si Thin Film Using Thermal Plasma Jetand Its Application to Thin-Film Transistor Fabrication, S.Higashi, AM-LCD ' 04 Technical Digest Papers, p.179
But, in utilizing above-mentioned heat treated solid state growth method, because substrate is heated to 600～1000 ℃ high temperature, so can not use cheap glass substrate.In addition, big to the heat load of substrate, be easy to generate substrate deformation or crackle.In addition, crystallization needs long-time, lacks productivity.In addition, according to the laser annealing method, though can adopt the low glass substrate of thermal endurance, need the equipment of high price, there is the tendency of the deviation increase of element characteristic simultaneously.In addition, the hot plasma gunite also can increase cost.
On the other hand, present inventors, as the heat load that can alleviate to substrate, can carry out the manufacture method of the heat treated semiconductor device of large-area substrate, with by implement mist with hydrogen and oxygen be heat treatment that the flame of the gas burner of fuel carries out be research object (for example, be willing to 2005-329205 etc. with reference to the spy), in this research, furtherd investigate the technology and the condition thereof that are used to obtain good semiconductor device.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method that can reduce to the semiconductor device of the heat load of substrate.In addition, the present invention also aims to provide a kind of manufacture method etc. of the semiconductor device that can improve property of semiconductor element.
(1) manufacture method of semiconductor device of the present invention, have: the flame of gas burner that will be fuel with the mist of hydrogen and oxygen is as thermal source, the operation that the semiconductor layer of film forming on substrate is heat-treated, by described heat treatment, described semiconductor layer is recrystallized, form oxide-film on the surface of described semiconductor layer.
According to this method, can utilize the flame of gas burner to carry out recrystallizing of semiconductor layer.In addition, by the reactivity kind (oxygen base, hydrogen base, hydroxyl etc.) that burning produces, can making between the atom of semiconductor layer not, Cheng Jian (free key) combines with hydrogen or oxygen atom.Its result can reduce the trap density of electric charge, improves the characteristic of semiconductor layer.In addition, the oxide-film that forms in the time of can utilizing the recrystallizing of semiconductor layer is realized the simplification of manufacturing process.
(2) manufacture method of semiconductor device of the present invention, have: heat treatment step, be to be that the flame of gas burner of fuel is as thermal source with the mist of hydrogen and oxygen, the operation that the semiconductor layer of film forming on substrate is heat-treated, described semiconductor layer is recrystallized, form oxide-film on the surface of described semiconductor layer; With the operation that on described oxide-film, forms conductive film.
According to this method, can utilize the flame of gas burner to carry out recrystallizing of semiconductor layer.In addition, by the reactivity kind (oxygen base, hydrogen base, hydroxyl etc.) that burning produces, can making between the atom of semiconductor layer not, Cheng Jian (free key) combines with hydrogen or oxygen atom.Its result can reduce the trap density of electric charge, improves the characteristic of semiconductor layer.In addition, the oxide-film that forms in the time of can utilizing the recrystallizing of semiconductor layer is realized the simplification of manufacturing process.By on this oxide-film, forming conductive film, for example can form TFT or electric capacity semiconductor elements such as (capacitors).
For example, has the operation that on described oxide-film, forms dielectric film.So, only under the thin situation, can also form dielectric film as the oxide-film that constitutes semiconductor element again with oxide-film.
(3) manufacture method of semiconductor device of the present invention, have: heat treatment step, be to be that the flame of gas burner of fuel is as thermal source with the mist of hydrogen and oxygen, the operation that the semiconductor layer of film forming on substrate is heat-treated, and, described semiconductor layer is recrystallized, form oxynitride film on the surface of described semiconductor layer; With the operation that on described oxynitride film, forms conductive film.
According to this method, can utilize the flame of gas burner to carry out recrystallizing of semiconductor layer.In addition, by the reactivity kind (oxygen base, hydrogen base, hydroxyl etc.) that burning produces, can making between the atom of semiconductor layer not, Cheng Jian (free key) combines with hydrogen or oxygen atom.Its result can reduce the trap density of electric charge, improves the characteristic of semiconductor layer.In addition, form the heat-treat condition of oxynitride film when the recrystallizing of semiconductor layer by research, can make the permittivity film high and finer and close than oxide-film is the surface that oxynitride film remains in semiconductor layer.Therefore, by (for example, TFT or electric capacity etc.) a part can realize the simplification of manufacturing process as semiconductor element with this oxynitride film.By on this oxide-film, forming conductive film, for example can form semiconductor element.
For example, the described heat treatment of carrying out under the described conditions is by containing the heat treatment that nitrogen carries out in the mist that makes described hydrogen and oxygen, perhaps, is the heat treatment of carrying out under blanket of nitrogen.According to this method, can form oxynitride film effectively on the surface of semiconductor layer.
For example, described oxide-film or oxynitride film are gate insulating films, and described conductive film is a gate electrode.According to this method, can simplify the manufacturing process of TFT, can also improve the characteristic of TFT.
For example, described oxide-film or oxynitride film are capacitor insulating films, and described conductive film is a capacitance electrode.According to this method, can simplify the manufacturing process of capacity cell, can also improve the characteristic of capacity cell.
For example, can also have operation of removing described oxide-film and the operation that forms another dielectric film on the surface of described semiconductor layer.So the oxide-film that forms in the time of can also removing the recrystallizing of semiconductor layer forms another dielectric film.
For example, described heat treatment is to be set at the heat treatment that oxygen excess is carried out by the mist with described hydrogen and oxygen.According to this method, formation that can the accelerating oxidation film.
For example, described heat treatment also comprises: after the described heat treatment of carrying out under the described conditions, the mist of described hydrogen and oxygen is set at hydrogen is superfluous to carry out, carry out the heat treatment of the upgrading of described semiconductor layer and described oxide-film.According to this method, can reduce between the atom of semiconductor layer not Cheng Jian (free key) by hydrogen atom, reduce the trap density of electric charge.In addition, especially enough reduce the crystal defect that produces at the interface of oxide-film and semiconductor layer easily, can also reduce the interface energy level density of semiconductor layer and oxide-film by Hydrogen Energy.
For example, before carrying out described heat treated operation, carry out by the operation of etching method to the semiconductor layer composition of film forming on described substrate.According to this method, can carry out the recrystallizing of semiconductor layer of desirable pattern.In addition, can also form oxide-film, cover semiconductor layer with this oxide-film in the side of semiconductor layer.
For example, described heat treatment forms the flame of described gas burner by linearity, utilizes this linearity flame relatively to scan described semiconductor layer and carries out.According to this method, the large-area semiconductor substrate of heat treatment effectively.
For example, adjust the distance of described gas burner and described substrate, impose on the temperature or the pressure of the flame of this semiconductor layer with adjustment.According to this method, can adjust heat-treat condition easily.
For example, adjust the posture of described gas burner, impose on the pressure of the flame of this semiconductor layer with adjustment with respect to described substrate.According to this method, can adjust heat-treat condition easily.
Described gas burner comprises: the wireway of deriving mist; And shutter, it comprises the spray nozzle part that coats described wireway and make the combustion chamber of mist burning and discharge burning gases.According to this method, can control the discharge state of burning gases (flame) by nozzle.
For example, on described wireway, be formed with a plurality of peristomes, from this peristome irradiation flame with certain spacing.According to this method, the large-area semiconductor substrate of heat treatment effectively.In addition,, increase peristome by prolonging wireway, can be easily corresponding with the maximization of substrate.
For example, in the mist of described hydrogen and oxygen, add inert gas, to adjust the temperature of described flame.According to this method,, enlarge ignition temperature or the adjusting range of the gas pressure that flows out from nozzle by adding inert gas.
For example, at described substrate of indoor configuration and gas burner, to described indoor importing inert gas, to adjust indoor pressure.According to this method, can suppress the oxidation (oxidation rate) of semiconductor layer according to the importing degree of inert gas.
For example, be included in the operation of carrying out before the described heat treatment and/or heating described substrate in handling.According to this method, can reduce the thermal shock that the temperature difference of flame irradiation portion and substrate integral body (main body) causes.
(4) manufacture method of electronic equipment of the present invention is the manufacture method with electronic equipment of semiconductor device, has the manufacture method of described semiconductor device.Thus, can improve the characteristic of electronic equipment.So-called electronic equipment, generally refer to the equipment that plays certain function that possesses semiconductor device of the present invention, its structure is not particularly limited, for example be generally the computer installation that possesses described semiconductor device, also comprise mobile phone, PHS, portable information device (so-called PDA), electronic memo, IC-card, video camera, TV, large-scale phosphor screen etc., need all devices of semiconductor device.
In addition, electronic equipment of the present invention possesses the semiconductor that uses described method for making semiconductor to make.Thus, can access the electronic equipment of high reliability.
Description of drawings
Fig. 1 is the figure of configuration example of the semiconductor-fabricating device of the expression semiconductor device that is used to make execution mode 1.
Fig. 2 is the vertical view of configuration example of the gas burner portion of expression semiconductor-fabricating device.
Fig. 3 is the cutaway view of configuration example of the gas burner portion of expression semiconductor-fabricating device.
Fig. 4 is the figure of the 1st configuration example of the gas burner portion of expression semiconductor-fabricating device.
Fig. 5 is the figure of the 2nd configuration example of the gas burner portion of expression semiconductor-fabricating device.
Fig. 6 is the figure of the 3rd configuration example of the gas burner portion of expression semiconductor-fabricating device.
Fig. 7 is the figure of relation of the pressure of expression height of nozzle and eluting gas.
Fig. 8 is the figure of relation of the pressure of expression its shape of nozzle and angle and eluting gas.
Fig. 9 is the figure of distance with the relation of the pressure of eluting gas of expression nozzle and wireway.
Figure 10 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 1.
Figure 11 be expression after recrystallizing silicon film thickness and silicon oxide film Determination of thickness result's figure.
Figure 12 represents hydrogen flame treatment and the figure that locates.
Figure 13 is the cutaway view that is used to illustrate according to the effect of manufacture method 1.
Figure 14 is the cutaway view that is used to illustrate according to the effect of manufacture method 1.
Figure 15 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 1.
Figure 16 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 2.
Figure 17 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 2.
Figure 18 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 3.
Figure 19 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 3.
Figure 20 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 4.
Figure 21 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (electric capacity) of manufacture method 5.
Figure 22 is the figure of the example of the expression electronic equipment that adopts electro-optical device.
Among the figure: 11-water pot, 12-electricity decomposer, 15-Gas controller; 21-chamber (process chamber), 22-gas burner, 22a-wireway; the 22b-shutter, 22c-combustion chamber, 22d-nozzle; the 22e-flow export, 51-moving load part, 100-glass substrate (substrate); 101-substrate protective film, 102-silicon fiml, 102a-polysilicon film; the 102b-silicon oxide film, 102c-oxygen silicon nitride membrane, 103-gate insulating film; the 104-conductive film, 104a; the 104b-source electrode; the drain region, the 105-interlayer dielectric; the 106-conductive film; 106a; the 106b-source electrode; drain electrode, 111-conductive film, 300-glass substrate (substrate); 301-substrate protective film; the 302a-polysilicon film, 303-gate insulating film, 304a; the 304b-source electrode; the drain region; the 305-interlayer dielectric; 306a; the 306b-source electrode; drain electrode, 500-electro-optical device, 530-mobile phone; the 531-antenna part; the 532-audio output unit, 533-sound input part, 534-operating portion; the 540-video camera; the 541-imaging division, 542-operating portion, 543-sound input part; the 550-TV; 560-overwind TV, c-charge carrier, d-damage; the G-gate electrode, the GO-gate insulating film.
Embodiment
In the present embodiment, the gas burner that adopts the mist with hydrogen and oxygen to act as a fuel is heat-treated semiconductor layer.Below, sometimes this heat treatment is called " hydrogen flame treatment ".In addition, sometimes the flame of above-mentioned gas burner is called " hydrogen flame ".In this heat treatment, for example, have the heat treatment of silicon fiml (semiconductor film, semiconductor layer) when recrystallizing.
Below, the execution mode that present invention will be described in detail with reference to the accompanying.In addition, mark same or related symbol, and omit the explanation of its repetition for part with same function.
1) semiconductor-fabricating device
At first, with reference to Fig. 1～Fig. 9 the used semiconductor-fabricating device of semiconductor device of making present embodiment is described.
Fig. 1 is the figure of configuration example of the semiconductor-fabricating device of the expression semiconductor device that is used to make execution mode 1.In Fig. 1, in water pot 11, store pure water, be used for supplying with water to electric decomposer (electric decomposer) 12.Water is separated into hydrogen and oxygen after being decomposed by electric decomposer 12 electricity.The hydrogen and the oxygen that separate are supplied to Gas controller 15.Gas controller 15 is made of computer system, pressure regulating valve, flow control valve, various transducers etc., according to predefined program, the mixing ratio of the hydrogen of the gas burner 22 in adjusting supply downstream and the quantity delivered of oxygen (mist), supply pressure, two gases etc.
In addition, Gas controller 15 is incited somebody to action the hydrogen (H that never illustrated gas storage jar is supplied with
2), oxygen (O
2) import in the described mist supply gas burner 22 again.Thus, obtain the mixing ratio (blending ratio) of hydrogen in the mist and oxygen from water (H
2O) stoichiometric composition is than (H
2: O
2=2mol: 1mol) skew, the mist of hydrogen surplus (Fu Qing) or oxygen excess (oxygen enrichment).
In addition, Gas controller 15 can be with argon (Ar), helium (He), the nitrogen (N of illustrated gas storage jar supply never
2) inert gas that waits imports in the above-mentioned mist again.Thus, carry out the flame temperature (ignition temperature) of gas burner 22 or the control of flame status.
Above-mentioned water pot 11, electric decomposer 12 and Gas controller 15 constitute fuel (raw material) supply unit.
Dispose the chamber (process chamber) 21 that forms enclosure space in the downstream of Gas controller 15.In chamber 21, dispose moving load part (mounting table) 51 that the substrate (semiconductor substrate or glass substrate etc.) 100 of the gas burner 22 that produces heat treated flame, mounting process object can relatively move with respect to gas burner 22 etc.
Atmosphere in the chamber 21 are not limited thereto, and for example, can be that degree, the internal temperature of atmospheric pressure～0.5MPa is the degree set of room temperature～100 ℃ by internal pressure also.For the air pressure in the chamber 21 are remained desirable state, can in chamber 21, import the inert gas of described argon etc.
Moving load part 51 is provided with the mechanism that moves the platform that is loaded with substrate by certain speed in order to prevent particle.In addition, in order to prevent from the thermal shock of the substrate 100 that rapid temperature difference etc. causes, on the mounting table of substrate 100, be provided with to heat the mechanism of (preheating) or cooling, carry out this temperature control by the temperature regulation section 52 of outside.Add thermal recovery electric heating mechanism, the cooling employing utilizes the cooling body of refrigerating gas or cooling water etc.
Fig. 2 is the vertical view of configuration example of the gas burner portion of expression semiconductor-fabricating device.As shown in Figure 2, the gas burner 22 of the semiconductor-fabricating device of Fig. 1 is formed by the wide longitudinal member of width (above-below direction of figure) than moving load part 51, the wide flame of width that can emission ratio moving load part 51.By to the mobile moving load part 51 of direction (direction of arrow among the figure) of vertical quadrature of gas burner 22, or mobile gas burner 22, and make gas burner 22 scanning substrates 100.
Fig. 3 is the cutaway view of configuration example of the gas burner portion of expression semiconductor-fabricating device.As shown in Figure 3, gas burner 22 constitutes by being provided with combustion chamber 22c, the flow export 22e etc. that becomes the nozzle 22d of the outlet that burning gases discharge to foreign side from shutter 22b and be located at the mist on the wireway 22a of wireway 22a, the shutter 22b that surrounds wireway 22a, mist burning that crested device 22b surrounds of outlet opening that is used for deriving to the combustion chamber gas of mist.
If set the gap (distance) of wide nozzle 22d and substrate 100, then pressure descends when nozzle is emitted burning gases.If set narrow (restriction) the nozzle 22d and the gap of substrate 100, the pressure that then can suppress burning gases descends, and increases pressure.Therefore, can adjust gas pressure by the adjusting play.Can promote water vapour annealing, rich hydrogen annealing, oxygen enrichment annealing etc. by pressurization.Setting by mist can be selected various annealing.Among the figure, expression water vapour (H
2O steam) Pen Chu state.
As described later, form the flow export 22e of mist, flame (torch) shape of the combustion chamber 22c of gas burner 22 can be formed wire (flame of long chi), a plurality of torch-like etc. by a plurality of or wire.Near the gas burner 22 temperature curve, according to the design of the spray nozzle part 22d of flow export 22e or shutter 22b etc., preferably setting on the scanning direction of flame becomes rectangle.
Fig. 4 is the figure of the 1st configuration example of the gas burner portion of expression semiconductor-fabricating device.Fig. 4 (A) is the horizontal cutaway view of gas burner 22, and Fig. 4 (B) is the partial sectional view longitudinally of gas burner 22, and Fig. 4 (C) is a stereogram of schematically representing gas burner portion.In these figure, for the part mark prosign corresponding with Fig. 3.
In this embodiment, form shutter 22b in the mode that surrounds wireway 22a.The below of shutter 22b becomes nozzle 22d, and (nozzle 22d side) wire (slotted hole) is provided with gas stream outlet 22e below wireway 22a.In addition, for the discharge at each position of the gas stream outlet 22e that makes linearity is identical, also can change the width in hole according to the position.
Fig. 5 is the figure of the 2nd configuration example of the gas burner portion of expression semiconductor-fabricating device.Another configuration example of expression gas burner 22.Fig. 5 (A) is the horizontal cutaway view of gas burner 22, and Fig. 5 (B) is the partial sectional view longitudinally of gas burner 22.In two figure, for the part mark prosign corresponding with Fig. 3.
In this embodiment, form shutter 22b in the mode that surrounds wireway 22a.The below of shutter 22b becomes nozzle 22d, and (nozzle 22d side) equally spaced is provided with a plurality of gas stream outlet 22e below wireway 22a.In this constitutes, for the gas density that makes the combustion chamber is the same, make from nozzle 22d evenly to outside effluent air flow, forming for example can be to the formation of the suitable mobile wireway 22a of illustrated left and right directions.In addition, fix, make the discharge at each position of gas stream outlet 22e identical, also can change the interval of gas stream outlet 22e as required according to the position in order to make wireway 22a.
Fig. 6 is the figure of the 3rd configuration example of the gas burner portion of expression semiconductor-fabricating device.Fig. 6 (A) is the horizontal cutaway view of gas burner 22, and Fig. 6 (B) is the partial sectional view longitudinally of gas burner 22.In two figure, represent prosign for the part corresponding with Fig. 3.
In this embodiment, also form shutter 22b in the mode that surrounds wireway 22a.The below of shutter 22b becomes nozzle 22d, equally spaced is provided with a plurality of gas stream outlet 22e in the side of wireway 22a helical form.In this constitutes, for the gas density that makes the combustion chamber is the same, make from nozzle 22d evenly to outside effluent air flow, forming can be by the formation of the wireway of rotation shown in the arrow among figure 22a.
Fig. 7 is the figure of relation of the pressure of expression height of nozzle and eluting gas.Shown in Fig. 7 (A),, can reduce the pressure that flows out burning gases by making the surface isolation of nozzle 22d from substrate 100.In addition, shown in Fig. 7 (B),, can improve the pressure that flows out burning gases by making the surface of nozzle 22d near substrate 100.
Fig. 8 is the figure of relation of the pressure of expression its shape of nozzle and angle and eluting gas.As shown in Figure 8, eluting gas pressure is adjusted in the shape that can be by nozzle 22d or the adjustment of posture (for example, the shape of flow export or with respect to the adjustment of the angle of substrate).In this embodiment, shown in Fig. 8 (A), the flow export shape of spray nozzle part 22d is formed in the open shape of a side.Therefore, under the upright state of gas burner 22, can reduce the pressure that flows out burning gases.In addition, shown in Fig. 8 (B), if gas burner 22 is rotated or inclination, then the flow export of nozzle 22d can improve the pressure that flows out burning gases near the surface of substrate 100.
Fig. 9 is the figure of distance with the relation of the pressure of eluting gas of expression nozzle and wireway.As shown in Figure 9, it is variable closing by the relative position that makes wireway 22a and shutter 22b, can adjust from the temperature of the burning gases of nozzle 22d outflow.For example, by form wireway 22a can be in shutter 22b towards the structure of nozzle 22d advance and retreat, can moving combustion chamber 22c, change the distance between thermal source and the nozzle 22d.In addition, can carry out the adjustment of the distance between thermal source and substrate.
Therefore, shown in Fig. 9 (A), relatively under the situation near nozzle 22d, the burning gases that flow out from nozzle 22d relatively reach a high temperature at wireway 22a.In addition, shown in Fig. 9 (B), under the situation that wireway 22a relatively separates from nozzle 22d, the burning gases that flow out from nozzle 22d relatively reach low temperature.
Such structure can be adjusted the temperature that flows out burning gases under the situation in the gap that does not change 100 of gas burner 22 and substrates, therefore all right.Certainly, also can adjust substrate temperature by the gap that changes between gas burner 22 and substrate.Certainly, also can form, and then adjust the relative position relation of wireway 22a and shutter 22b, adjust the formation of gas temperature by the gap between change burner 22 and substrate.In addition, also can adjust substrate temperature by changing the sweep speed of 22 pairs of substrates of gas burner.
In addition, for the structure of the gas burner of Fig. 4～shown in Figure 9, also can be with they appropriate combination.
For example, can make up formation shown in Figure 7 and formation shown in Figure 9.As make the formation that gas burner shown in Figure 7 22 integral body are approaching or separate with respect to substrate 100, can adjust the gap of 100 of nozzle 22d and substrates, the temperature (for example, surface temperature) of regulating substrate 100.In addition, as shown in Figure 9, can come the temperature of substrate 100 is carried out fine adjustment towards nozzle 22d advance and retreat by making the wireway 22a in the gas burner 22.Thus, the easier temperature that reaches with substrate 100 is the heat treatment temperature of target.
In addition, can constitutional diagram 7 and formation shown in Figure 8.As make the formation that gas burner 22 integral body are approaching or separate with respect to substrate 100, can adjust the gap (with reference to Fig. 7) of 100 of nozzle 22d and substrates, regulate the surface temperature of substrate 100 or the pressure of flame.In addition, by adjusting posture, the surface temperature of scalable substrate 100 or the pressure of flame (with reference to Fig. 8) of gas burner 22 integral body with respect to substrate 100.
In addition, can constitutional diagram 7, Fig. 8 and formation shown in Figure 9.As make the formation that gas burner 22 integral body are approaching or separate with respect to substrate 100, can adjust the gap of 100 of nozzle 22d and substrates, the surface temperature of substrate 100 or the pressure of flame are carried out coarse adjustment (with reference to Fig. 7).In addition, by adjusting the posture of gas burner 22 integral body with respect to substrate 100, the pressure (with reference to Fig. 8) of the flame on scalable substrate 100 surfaces.In addition, by the wireway 22a in the gas burner 22 can be come the surface temperature of substrate 100 is carried out fine adjustment towards nozzle 22d advance and retreat.According to described formation, can carry out more reliable heat treatment.
In addition, though not shown, be made as movablely by shield 22b with gas burner 22, width is variable on the scanning direction of gas burner 22 can to make the opening (flow export, restriction) of nozzle 22.Thus, can adjust the heat treated temperature curve, heat treatment temperature, flame pressure etc. of open-assembly time, substrate 100 of processed part of substrate 100 of the scanning direction of gas burner 22.
In the semiconductor-fabricating device of above explanation, owing to possess the gas burner of the long chi of crosscut substrate, so can carry out the heat treatment of the such large-area substrate of glass pane.In addition, because the electric resolution by water accesses hydrogen and the oxygen that becomes fuel, so gas material obtains easily, and running cost is low.
In addition, in above-mentioned semiconductor-fabricating device, be provided with shutter 22b on gas burner 22, but also can not adopt shutter 22b, the state gas burner 22 being exposed to atmosphere promptly directly radiates flame from wireway 22a and handles.In addition, in above-mentioned semiconductor-fabricating device, the situation when having illustrated from shutter 22b ejection fuel gas jets out flames but also can be adjusted into from shutter 22b.
In addition, to the processing of substrate, can be the processing that utilizes burning gases, also can be to make the directly processing of contact of flame.The control of these processing can suitably be set by the condition of each processing.
Especially, flame has strong internal flame of reproducibility (reducing flame) and the strong flame envelope (oxidizing flame) of oxidizability, by making which and substrate contacts, can carry out the setting corresponding to treatment conditions.In addition, internal flame temperature lower (about 500 ℃), flame envelope is high temperature (about 1400～1500 ℃).Be high temperature more between internal flame and the flame envelope, reach about 1800 ℃.Therefore, can carry out setting corresponding to treatment conditions.
In addition, in heat treatment step, the mixing by suitable setting hydrogen and oxygen is quantity delivered when, can set reducing atmosphere (Fu Qing) or oxidizing atmosphere (oxygen enrichment) easily.
In addition, owing to obtain becoming the hydrogen and the oxygen of fuel by the electricity decomposition of water, so can obtain water (H easily
2O) stoichiometric composition by add oxygen or hydrogen in addition in this mist, can be set reducing atmosphere (Fu Qing) or oxidizing atmosphere (oxygen enrichment) than being the hydrogen of 2mol: 1mol and the mist of oxygen easily.
In addition, also carry out the adjustment of flame temperature easily.In addition, also can import inert gas as required, or adjust the flow of unstrpped gas, adjust flame status (temperature, gas pressure etc.) thus.
In addition, the nozzle form by adjusting gas burner etc. obtain the temperature desired curve easily.
Adopt the processing of this gas burner, the productivity height in addition, can be handled at an easy rate.In addition, because the unstrpped gas of flame is the energy of cleanings such as hydrogen or oxygen, main product is a water, so can reduce carrying capacity of environment (environmental disruption).
2) manufacture method of semiconductor device
(manufacture method 1)
Below, the manufacture method 1 of the semiconductor device (TFT: thin-film transistor, Thin Film Transistor) that uses described semiconductor-fabricating device is described with reference to Figure 10～Figure 15.Figure 10 is the operation cutaway view (Figure 15 too) of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 1.
At first, shown in Figure 10 (A), prepare glass substrate (substrate, transparency carrier, insulating properties substrate) 100.Glass substrate is used for liquid crystal indicator etc., can adopt large-area substrate according to device.On this substrate 100,, for example form silicon oxide film as substrate protective film (substrate oxide-film, insulated substrate film) 101.As unstrpped gas, for example using plasma CVD (chemicalvapor deposition, chemical vapour deposition (CVD)) method forms this silicon oxide film with TEOS (tetra ethyl ortho silicate, tetraethyl orthosilicate) and oxygen etc.
Then, on substrate protective film 101, for example form the silicon fiml 102 of amorphous as semiconductor film.This silicon fiml is for example by adopting SiH
4The CVD method of (monosilane) gas forms.
Then, shown in Figure 10 (B), on silicon fiml 102, form not shown photoresist film (below, abbreviate " resist film " as), by exposure and develop (photoetching process), make resist film (mask, Etching mask) island residual.Then, as mask, etching silicon fiml 102 forms semiconductor element zone (island areas) with above-mentioned resist film.Then, remove resist film.Below, removing of this photoetching process, etching and resist film handled be called composition.
Then, silicon fiml 102 is implemented the hydrogen flame treatment, silicon is recrystallized, form polysilicon film 102a (Figure 10 (C)～(E)).At this moment, on polysilicon film 102a, form silicon oxide film 102b.
That is, substrate 100 is carried on moving load part 51 (with reference to Fig. 1 etc.), implement heat treatment, silicon fiml 102 is recrystallized by go up scanning gas burner 22 at substrate 100 (silicon fiml 102).At this moment, shown in Figure 10 (C)～(E), along with the scanning of hydrogen flame, silicon fiml 102 is varied to polysilicon 102a, forms silicon oxide film 102b on its surface simultaneously.
For example, the width of the scanning direction of the flame (high-temperature gas) that is 600～1500 ℃ at substrate temperature, flows out from nozzle 22d is that the air pressure of 10mm, flame is under the condition of 0.1～0.2MPa, and silicon fiml 102 press per 1 area exposure 1m second～100m of flame about second.So long as the heating by the short time, substrate temperature reaches the heat treatment about 600～750 ℃, also can adopt the low LCD of thermal endurance with glass (for example, soda-lime glass) etc. as aforesaid substrate.Certainly, (gap Gap) etc., is carried out substrate temperature and is reached 750～900 ℃ or its above heat treatment also can to pass through to adjust the sweep speed of hydrogen flame or the front end of burner and the distance of substrate.In this case, can use the high substrate of thermal endurance (for example, quartz base plate).In addition, when carrying out this heat treatment, by being installed in the program in the Gas controller 15 in advance, can be with hydrogen (H
2) and oxygen (O
2) reactive ratio set 2: 1 in molar ratio for.In addition, also can change the ratio of oxygen.In addition, also can add other gas (inert gas).
Below, the experimental result that the present inventor draws is described.For 5 samples of the A～E that under multiple condition, has implemented the hydrogen flame treatment, silicon film thickness and silicon oxide film thickness after recrystallizing have been measured.It the results are shown in Figure 11.
To various samples, carried out the hydrogen flame treatment by condition shown below after, on the x direction shown in Figure 12 (A), between 30mm, set by the interval of 0.3mm and to locate, measured silicon oxide film thickness on this aspect etc.In addition, hydrogen flame treatment (heat treatment, recrystallize processing) is carried out from the flame (some flame) that the wireway 22a that is provided with a plurality of poroid gas streams outlet 22e radiates by scanning on the y direction of Figure 12 (A) shown in Figure 12 (B).Figure 12 represents hydrogen flame treatment and the figure that locates.
When Sample A represents to be set at Gap50mm, sweep speed 62mm/s, when sample B represents to be set at Gap50mm, sweep speed 50mm/s, when sample C represents to be set at Gap30mm, sweep speed 98mm/s, in addition, when sample D represents to be set at Gap30mm, sweep speed 65mm/s, when sample E represents to be set at Gap30mm, sweep speed 38mm/s.
As shown in figure 11, about the thickness of the silicon fiml behind the crystallization, be roughly in Sample A～D about 0.051 μ m, in addition, the thickness of the silicon oxide film that it is surperficial is roughly about 0.004 μ m.In sample E, the silicon fiml behind the crystallization is that 0.04 μ m, silicon oxide film are about 0.009 μ m.In this sample E, the degree of oxidation on silicon fiml surface is bigger than other sample.Therefore, clear and definite increase the thickness of silicon oxide film by reducing Gap and scanning slowly.In addition, along with the decline of sweep speed, the deviation of the various data that the inequality of flame temperature causes is remarkable, so in Figure 11, utilize the peak of various data to compare Sample A～E.
So,, confirmed that the surface of the silicon fiml behind crystallization forms silicon oxide film according to present inventor's experimental result.
Therefore, can be with this oxide-film as gate insulating film.So according to this manufacture method, this operation simply and rapidly of the heat treatment of the flame by utilizing gas burner 22 can be carried out recrystallizing and the formation of silicon oxide film 102b of silicon fiml 102.In addition, if the width that makes gas burner 22 greater than semiconductor substrate 100 (with reference to Fig. 2), then can be heat-treated substrate 100 integral body by single pass.In addition, because silicon fiml 102 big or small extremely thin with respect to the flame of gas burner 22, so also form silicon oxide film 102b in the side of silicon fiml 102.Thereby, after being carried out composition, implements silicon fiml 102 the hydrogen flame treatment, can cover polysilicon film 102a (with reference to Figure 10 (E)) by enough silicon oxide film 102b thus.
In addition, according to the hydrogen flame treatment, in flame or around the flame, remove unstrpped gas (O
2, H
2) or the burning product be H
2Also there is oxygen base (O in O (water vapour) in addition
*), hydrogen base (H
*), hydroxyl (OH
*) etc.In addition, the ionization by the water vapour that produces in burning gases generates hydrogen and oxygen.Perhaps, also there are imperfect combustion hydrogen and oxygen.Thereby, also play the effect that so-called hydrogen annealing or water vapour are annealed.
(1) promptly, when the recrystallizing of silicon, produce the free key of silicon in the inside of crystal boundary or crystal grain.Reduce the mobility of charge carrier by this free key.But,,, this free key is combined with hydrogen by implementing the hydrogen flame treatment according to above-mentioned operation (manufacture method 1).Thereby, as shown in figure 13, can improve the mobility of charge carrier c.Figure 13 is the cutaway view that is used to illustrate the effect of utilizing manufacture method 1.In addition; 300 expression substrates; 301 expression substrate protective films; 302a represents polysilicon film; 304a, 304b represent source electrode, drain region, 303 expression gate insulating films, and G represents gate electrode; 305 expression interlayer dielectrics, 306a, 306b are represented source electrode, drain electrode (in Figure 14 (A) too).
In addition, by carrying out the hydrogen flame treatment of Fu Qing, can promote combining of free key and hydrogen.So-called rich hydrogen is meant that making supply gas is hydrogen (H
2), oxygen (O
2) ratio in the ratio of components of hydrogen greater than water (H
2O) stoichiometric composition is 2mol: 1mol.
(2) in addition, the interface at polysilicon film 102a and silicon oxide film 102b is easy to generate defective.Because of this defective produces interface energy level, reduce the characteristic of TFT.Particularly, bring the decline of switching speed of obstruction that channel current sharply raises, TFT or the rising of threshold potential.But,,, this free key is combined with hydrogen or oxygen by implementing the hydrogen flame treatment according to above-mentioned operation (manufacture method 1).Thereby, shown in Figure 14 (A), the trap of the charge carrier c that defective d causes can be reduced, thereby the rapid rising of channel current, the raising of switching speed that realizes TFT or the lower voltage of threshold potential can be guaranteed.In addition, shown in Figure 14 (B), according to the silica (SiO that utilizes plasma CVD
2) accumulation, because of piling up the plasma damage at initial stage, produce defective d at the polysilicon film 302a and the interface of piling up oxide-film easily.That is, by the charged particle q that plasma (Plasma) produces, the surface of bump polysilicon film 302a produces defective d.On this defective d, pile up silicon oxide particle (SiO successively
2).But, according to above-mentioned operation, by enforcement hydrogen flame treatment, the plasma damage in the time of can avoiding silicon oxide film 102b film forming, and then can reduce defective.Figure 14 is the cutaway view that is used to illustrate according to the effect of manufacture method 1.
In addition, (3) by carrying out the hydrogen flame treatment of oxygen enrichment, growth that (a) can the accelerating oxidation film.(b) in addition, can repair oxygen defect in the oxide-film.In addition, (c) can utilize oxygen to repair the defective at the interface of polysilicon film 102a and silicon oxide film 102b.The defective at described position, also available H atom is repaired, but thinks and utilize the reparation of O atom to can further improve characteristic.So-called oxygen enrichment is meant that making supply gas is hydrogen (H
2), oxygen (O
2) ratio in the ratio of components of oxygen greater than water (H
2O) stoichiometric composition is 2mol: 1mol.
As above detailed description,, can improve the characteristic of polysilicon film 102a and silicon oxide film 102b according to the hydrogen flame treatment.In addition, their interface energy level density can be reduced, the characteristic of TFT can be improved.In addition, by changing the hydrogen (H in the supply gas
2) or oxygen (O
2) ratio, reach rich hydrogen or oxygen enrichment, play above-mentioned effect.Certainly, with hydrogen (H
2), oxygen (O
2) ratio be set at water (H
2O) stoichiometric composition is 2mol: during 1mol, also play above-mentioned defect repair effect by hydrogen or oxygen.
Switching for the flow that has gas has several different methods, for example, can carry out the processing of Fu Qing after the processing of oxygen enrichment.In this case, the formation of the oxide-film in the time of can promoting the recrystallizing of silicon fiml afterwards, can reduce the defective of polysilicon film by hydrogen.Certainly, also can realize oxide-film oxygen defect reparation or utilize hydrogen or the reduction of the interface energy level density of oxygen.
The manufacturing process of TFT then, is described.After the recrystallizing of silicon fiml 102, shown in Figure 15 (A), on silicon oxide film (gate insulating film) 102b,, for example utilize sputtering method to form for example Al metal materials such as (aluminium) as conductive film 104.Then, to conductive film 104 compositions, form gate electrode (gate electrode wiring) G by desirable shape thus.As conductive film 104, except that Al, also can adopt Ta refractory metals such as (tantalums).In addition, also can adopt sol-gal process or MOD (Metal-organic decomposition, organic metal method of piling) method to form conductive film 104.That is, also can and burn till metal compound solution, form conductive film 104 by coating.At this moment, can spray method, apply above-mentioned solution, burn till then according to the pattern of gate electrode by drop.In this case, can omit the composition operation.
Then, be mask with gate electrode G, by in silicon fiml 102, squeezing into (mix, inject) foreign ion, form source electrode, drain region 104a, 104b.In addition, the either party among 104a, the 104b becomes the source region, and the opposing party becomes the drain region.In addition, as foreign ion, under the situation that forms the n type semiconductor layer, for example, ion is squeezed into PH
3(hydrogen phosphide, Phosphine), under the situation that forms the p type semiconductor layer, for example, ion is squeezed into B
2H
6(diborane).Then, heat-treat, make the foreign ion activate.
Also can make impurity activityization herein, by implementing to utilize the heat treatment of above-mentioned gas burner 22.In this heat treatment, preferably the flame with gas burner 22 forms oxidizability.Oxidizability flame can obtain by mist is formed oxygen enrichment.The free bond of the silicon atom on the interface of oxygen in the atmosphere and polysilicon film 102a and silicon oxide film (gate insulating film) 102b etc. is closed, and makes this silicon atom to the electric forming inertia, thereby reduces interface energy level density.Therefore, in this heat treatment,, for example, the flame of gas burner 22 is set in 300～600 ℃ low temperature, with the high pressure that pressure for example is set in 1.0～2.0MPa that blows out of flame for the technological parameter in the above-mentioned semiconductor-fabricating device.
Then, shown in Figure 15 (B), on gate electrode G, form interlayer dielectric 105.It is the plasma CVD method formation of unstrpped gas that this interlayer dielectric 105 for example can utilize with TEOS and oxygen etc.In addition, also can implement (burning till) heat treatment and form by the fluent material of insulating properties such as the poly-silazane solution of coating.When adopting poly-silazane solution, can burn till the formation silicon oxide film by this.So-called poly-silazane solution is meant, will gather silazane and be dissolved in solution in the organic solvent (for example xylene solution).
Then, shown in Figure 15 (C),, on source electrode, drain region 104a, 104b, form contact hole by to interlayer dielectric 105 compositions.
Then, on the interlayer dielectric 105 of the inside of containing this contact hole,, for example adopt sputtering method to form ITO (indium-tin oxide film) as conductive film 106.As conductive film 106, except that ITO, also can adopt for example Al, Mo (molybdenum) or Cu metal materials such as (copper).In addition, also can adopt sol-gal process or MOD method to form conductive film 106.
Then, to conductive film 106 compositions, form source electrode, drain electrode (source electrode, drain electrode extraction electrode, lead-out wiring) 106a, 106b by desirable shape.In addition, the either party among 106a, the 106b becomes source electrode, and the opposing party becomes drain electrode.
By above operation, roughly finish TFT.This TFT for example can make the driving element as pixel electrodes such as liquid crystal indicator, electrophoretic apparatus or organic El devices, also can make the logical circuit as the pixel region periphery.In addition, as the element that constitutes memory, also can make as the logical circuit that drives memory etc.
In addition, in this manufacture method, after to silicon fiml 102 compositions, implemented the hydrogen flame treatment, but after also can having implemented the hydrogen flame treatment, carried out composition silicon fiml 102.But, after to silicon fiml 102 compositions, implement under the situation of hydrogen flame treatment, on the sidewall of silicon fiml 102, form the formed heat oxide film of hydrogen flame treatment (gate insulating film 102b), therefore more suitable (with reference to Figure 10 (E)).
So according to this manufacture method 1, the heat treatment of the gas burner that acts as a fuel by the mist with hydrogen and oxygen can form oxide-film on semiconductor layer surface when semiconductor layer is recrystallized.Thereby, can realize simplifying working process.In addition, as previously mentioned, can improve the characteristic at film, oxide-film and their interface after recrystallizing.
In addition, in the CVD method,, in film, produce defective (with reference to Figure 14 (B)) easily, increase the interface energy level of semiconductor layer and oxide-film easily, but, can realize the reduction of defective or interface energy level according to this manufacture method because of charged particle collides.In addition, and compare, can enough simple operations carry out cheap processing by the high-pressure water vapor annealing method upgrading film of needs high prices device.
(manufacture method 2)
In manufacture method 1, utilized the silicon oxide film 102b that forms when recrystallizing as gate insulating film, but also can be on this silicon oxide film 102b have further piled up silicon oxide film with CVD method etc., constitute gate insulating film by the stack membrane of heat oxide film and accumulating film.
Figure 16 and Figure 17 are the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 2.
Shown in Figure 16 (A), same with manufacture method 1, on glass substrate 100, form substrate protective film 101, for example form silicon fiml 102 as semiconductor film at an upper portion thereof then, afterwards to silicon fiml 102 compositions.
Then, silicon fiml 102 is implemented the hydrogen flame treatment, silicon is recrystallized, form polysilicon film 102a.At this moment, on polysilicon film 102a, form silicon oxide film 102b (Figure 16 (B)).
Then, shown in Figure 16 (C), on silicon oxide film 102b, for example form silicon oxide film 103 as dielectric film.This silicon oxide film 103 for example with TEOS and oxygen etc. as unstrpped gas, using plasma CVD method forms.By heat oxide film is that silicon oxide film 102b and accumulating film are that the stack membrane of silicon oxide film 103 constitutes gate insulating film GO.
So,, constituted gate insulating film GO by the stack membrane of heat oxide film that forms by the hydrogen flame treatment and accumulating film (appending dielectric film), so can easily adjust the thickness of gate insulating film according to above-mentioned operation.As illustrated in manufacture method 1, according to present inventor's research, the heat oxide film that forms by the hydrogen flame treatment is number nm.By gated sweep speed and gap, can realize the thick filmization of this heat oxide film.But, because there is boundary in this thick filmization, so under the situation of the thickness that can not satisfy desirable gate insulating film, preferably append accumulating film.
Even under described situation, as illustrated in detail in manufacture method 1, also can reduce the defective at the interface of polysilicon film 102a and silicon oxide film 102b, and then realize the reduction of interface energy level density, so can improve the TFT characteristic.
Then, same with manufacture method 1 shown in Figure 17 (A), on gate insulating film GO, form gate electrode G.Then, as mask,, form source electrode, drain region 104a, 104b with gate electrode G by in silicon fiml 102, squeezing into foreign ion.Then, on gate electrode G, form interlayer dielectric 105.
Also can implement the hydrogen flame treatment herein, via interlayer dielectric 105.That is scanning hydrogen flame on interlayer dielectric 105.As mentioned above, in flame or around the flame, remove unstrpped gas (O
2, H
2) or the burning product be H
2Also there is oxygen base (O in O (water vapour) in addition
*), hydrogen base (H
*), hydroxyl (OH
*) etc.Described reactivity kind, atom and molecule can enter via interlayer dielectric 105 grades.Thereby, the damage to gate insulating film GO (defective) that produces when etching the during formation that can repair gate electrode G or foreign ion are squeezed into.
Especially, hydrogen atom, hydrogen base, hydrogen molecule equimolecular (atom) size are little, so diffusion coefficient is big.Therefore, be diffused into easily near the gate insulating film GO, help repair-deficiency.Thereby, also can implement the hydrogen flame treatment of rich hydrogen.
In addition, this hydrogen flame treatment that is used for defect repair can suitably be carried out after the etching procedure that is easy to generate defective or foreign ion are squeezed into operation.Therefore, as illustrated in manufacture method 1, also can after squeezing into foreign ion, carry out the hydrogen flame treatment.In addition, also can repeatedly carry out this hydrogen flame treatment that is used for defect repair.For example, also can be after forming dielectric film on source electrode described later, drain electrode 106a, the 106b, perhaps, and then form behind the dielectric film of the wiring that covers the upper strata etc., carry out with various sequential.So, by after the formation operation of dielectric film, carry out the hydrogen flame treatment via dielectric film, can reduce oxidation or the heat load of the wiring of lower floor to gate electrode.
Then, shown in Figure 17 (B),, on source electrode, drain region 104a, 104b, form contact hole by to interlayer dielectric 105 compositions.Then, same with manufacture method 1, form source electrode, drain electrode 106a, 106b.Then, by repeating the formation operation of interlayer dielectric and wiring once more, can also form the wiring of multilayer.Roughly finish TFT by above operation.
So,, except that the effect of manufacture method 1, also play the effect of the thickness of easy adjustment gate insulating film GO according to this operation.
(manufacture method 3)
In manufacture method 2, after to silicon fiml 102 compositions, implement the hydrogen flame treatment, but also can after silicon fiml 102 has been implemented the hydrogen flame treatment, carry out composition.
Figure 18 and Figure 19 are the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 3.
Shown in Figure 18 (A), same with manufacture method 2, on glass substrate 100, form substrate protective film 101, for example form silicon fiml 102 as semiconductor film at an upper portion thereof then.
Then, silicon fiml 102 is implemented the hydrogen flame treatment, silicon is recrystallized, form polysilicon film 102a.At this moment, on polysilicon film 102a, form silicon oxide film 102b.
Then, shown in Figure 18 (B), polysilicon film 102a and silicon oxide film 102b are carried out composition.Then, shown in Figure 18 (C), on silicon oxide film 102b, for example form silicon oxide film 103 as dielectric film.This silicon oxide film 103 for example with TEOS and oxygen etc. as unstrpped gas, using plasma CVD method forms.By heat oxide film is that silicon oxide film 102b and accumulating film are that the stack membrane of silicon oxide film 103 constitutes gate insulating film GO.
So, same according to above-mentioned operation with manufacture method 2, can easily adjust the thickness of gate insulating film GO.In addition,,, also can reduce the defective at the interface of polysilicon film 102a and silicon oxide film 102b, improve the characteristic of TFT by the hydrogen flame treatment even constitute gate insulating film GO by stack membrane.In addition, can be enough the sidewall of the polysilicon film 102a that exposes when covering the composition of polysilicon film 102a of silicon oxide film 103.
Then, same with manufacture method 1 as shown in figure 19, on gate insulating film GO, form gate electrode G.Then, as mask,, form source electrode, drain region 104a, 104b with gate electrode G by in silicon fiml 102, squeezing into foreign ion.Then, on gate electrode G, form interlayer dielectric 105, form source electrode, drain electrode 106a, 106b.Then, by repeating the formation operation of interlayer dielectric and wiring once more, can form the wiring of multilayer.Roughly finish TFT by above operation.
So,, except that the effect of manufacture method 1, also play the effect of the thickness of easy adjustment gate insulating film GO according to this operation.In addition, because oxidized silicon fiml 103 coverings of the sidewall of the polysilicon film 102a behind the composition, so even gate electrode transverse side walls portion, gate electrode and polysilicon 102a can short circuits yet.
In addition, same with manufacture method 2 in this manufacture method, also can implement be used for the hydrogen flame treatment of defect repair via interlayer dielectric 105.
(manufacture method 4)
In manufacture method 1～3, be the flame of the gas burner of fuel by the mist that scans with hydrogen and oxygen, carry out the hydrogen flame treatment, but also can in above-mentioned mist, add nitrogen (N again
2), form oxynitride film.Figure 20 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (TFT) of manufacture method 4.
That is, as shown in figure 20, for example, by Gas controller shown in Figure 1 15, at hydrogen (H
2), oxygen (O
2) mist in add nitrogen (N
2), carry out the hydrogen flame treatment of silicon fiml 102 simultaneously.By this processing, silicon fiml 102 is varied to polysilicon 102a, and forms oxygen silicon nitride membrane 102c on its surface.In addition, because other operation is identical with manufacture method 1～3, so omit its detailed explanation.
So,, can on polysilicon film 102a, form higher, the finer and close oxygen silicon nitride membrane 102c of permittivity according to this manufacture method.Thereby, can improve the characteristic of TFT.
In addition, the interpolation of nitrogen can also can be added from the way of handling from the initial interpolation of handling.In addition, also can import nitrogen, form oxynitride film to indoor (with reference to Fig. 1).That is, can be the flame of the gas burner of fuel also by the mist that in blanket of nitrogen, scans with hydrogen and oxygen, form oxynitride film.In addition, also can constitute gate insulating film by the stack membrane of this oxynitride film and accumulating film.
(manufacture method 5)
In manufacture method 1～4, the heat oxide film that has formed when having utilized the hydrogen flame treatment of silicon fiml as the gate insulating film of TFT, but also can be as the part of other element.In this manufacture method, above-mentioned heat oxide film is used as capacitor insulating film.
Figure 21 is the operation cutaway view of expression according to the manufacture method of the semiconductor device (electric capacity) of manufacture method 5.
Shown in Figure 21 (A), same with manufacture method 2, on glass substrate 100, form substrate protective film 101, for example form silicon fiml 102 as semiconductor film at an upper portion thereof then.Then, after silicon fiml 102 is patterned into desirable shape, implement the hydrogen flame treatment, silicon is recrystallized, form polysilicon film 102a.At this moment, on polysilicon film 102a, form silicon oxide film 102b.Polysilicon 102a becomes the lower electrode of electric capacity.In addition, silicon oxide film 102b becomes capacitor insulating film.
Then, shown in Figure 21 (B), on silicon oxide film 102b,, for example adopt sputtering method to form for example metal material such as Al as conductive film 111.Then, conductive film 111 is patterned into desirable shape, forms the upper electrode (111) of electric capacity.
Then, as required, form interlayer dielectric or wiring.So the heat oxide film that forms in the time of can be with the hydrogen flame treatment of silicon fiml is as capacitor insulating film.
In addition, in above-mentioned operation, only with heat oxide film as capacitor insulating film, pile up dielectric film but also can on this film, form, with these stack membranes formation capacitor insulating films.
In addition, in above-mentioned operation, after to the silicon fiml composition, carried out the hydrogen flame treatment, but also can carry out carrying out composition after the hydrogen flame treatment of silicon fiml.In addition, also can after having piled up the metal material that constitutes upper electrode, carry out composition.
In addition, also can when the hydrogen flame treatment, in mist, import nitrogen, with the film that forms as oxynitride film.In this case, compare with oxide-film and can improve permittivity.In addition, also can constitute capacitor insulating film by the stack membrane of this oxynitride film and accumulation dielectric film.
In addition, in manufacture method 1～5, as gate insulating film or capacitor insulating film, the heat oxide film or the hot nitride film (102b) that have formed when having adopted the recrystallizing of silicon fiml 102, but also can remove this heat oxide film etc. by etching etc., the hydrogen flame treatment is implemented on surface to polysilicon film 102a once more, forms heat oxide film (102b) etc.In addition, also can utilize CVD method etc. to form and pile up dielectric film.
In addition, the embodiment or the application examples of the execution mode explanation by foregoing invention can be according to the purposes appropriate combination, and perhaps change or increase improves, and the present invention is not limited to the record of above-mentioned execution mode.
3) explanation of electro-optical device and electronic equipment
Below, the electro-optical device (electronic equipment) that uses the semiconductor device (for example TFT) that is formed by the method that illustrates is in said embodiment described.
Described semiconductor device (for example TFT) for example, can be used as the driving element of electro-optical device (display unit).Figure 22 represents to adopt the example of the electronic equipment of electro-optical device.Figure 22 (A) is the application examples in mobile phone, and Figure 22 (B) is the application examples in video camera.In addition, Figure 22 (C) is the application examples in TV (TV), and Figure 22 (D) is the application examples in the overwind TV.
Shown in Figure 22 (A), in mobile phone 530, possess antenna part 531, audio output unit 532, sound input part 533, operating portion 534 and electro-optical device (display part) 500.In this electro-optical device, can use (packing into) semiconductor device formed according to the present invention.
Shown in Figure 22 (B), in video camera 540, possess imaging division 541, operating portion 542, sound input part 543 and electro-optical device (display part) 500.In this electro-optical device, can use (packing into) semiconductor device formed according to the present invention.
Shown in Figure 22 (C), TV 550 possesses electro-optical device (display part) 500.In this electro-optical device, can use (packing into) semiconductor device formed according to the present invention.In addition, in used monitor apparatus (electro-optical device) such as PC, also can use (packing into) semiconductor device formed according to the present invention.
Shown in Figure 22 (D), overwind TV 560 possesses electro-optical device (display part) 500.In this electro-optical device, can use (packing into) semiconductor device formed according to the present invention.
In addition, in having the electronic equipment of electro-optical device, except that above-mentioned, also comprise large-scale phosphor screen, PC, portable information device (so-called PDA, electronic memo) etc., in addition, the picture unit, the view finder of digital camera, portable TV of band Presentation Function, flash of light billboard, exploitation are with various devices such as displays.
Claims (20)
1. the manufacture method of a semiconductor device is characterized in that,
Have: the flame of gas burner that will be fuel with the mist of hydrogen and oxygen is as thermal source, the operation that the semiconductor layer of film forming on substrate is heat-treated,
By described heat treatment, described semiconductor layer is recrystallized, form oxide-film on the surface of described semiconductor layer.
2. the manufacture method of a semiconductor device is characterized in that, has:
Heat treatment step, be to be that the flame of gas burner of fuel is as thermal source with the mist of hydrogen and oxygen, to the operation that the semiconductor layer of film forming on substrate is heat-treated, described semiconductor layer is recrystallized, form oxide-film on the surface of described semiconductor layer; With
On described oxide-film, form the operation of conductive film.
3. the manufacture method of semiconductor device as claimed in claim 2 is characterized in that,
Have the operation that forms dielectric film on described oxide-film, described conductive film is formed on the described dielectric film.
4. the manufacture method of a semiconductor device is characterized in that, has:
Heat treatment step, be will be with the mist of hydrogen and oxygen the flame of gas burner of fuel as thermal source, the operation that the semiconductor layer of film forming on substrate is heat-treated, and, described semiconductor layer is recrystallized, form oxynitride film on the surface of described semiconductor layer; With
On described oxynitride film, form the operation of conductive film.
5. the manufacture method of semiconductor device as claimed in claim 4 is characterized in that,
The described heat treatment of carrying out under the described conditions is by containing the heat treatment that nitrogen carries out in the mist that makes described hydrogen and oxygen,
Perhaps, be the heat treatment of under blanket of nitrogen, carrying out.
6. as the manufacture method of each described semiconductor device in the claim 2～5, it is characterized in that,
Described oxide-film or oxynitride film are gate insulating films, and described conductive film is a gate electrode.
7. as the manufacture method of each described semiconductor device in the claim 2～5, it is characterized in that,
Described oxide-film or oxynitride film are capacitor insulating films, and described conductive film is a capacitance electrode.
8. the manufacture method of semiconductor device as claimed in claim 1 is characterized in that, has:
Remove the operation of described oxide-film; With
Form the operation of another dielectric film on the surface of described semiconductor layer.
9. as the manufacture method of each described semiconductor device in the claim 1～8, it is characterized in that,
Described heat treatment is that the mist with described hydrogen and oxygen is set at oxygen excess and the heat treatment carried out.
10. as the manufacture method of each described semiconductor device in the claim 1～9, it is characterized in that,
Described heat treatment also comprises: after the described heat treatment of carrying out under the described conditions, the mist of described hydrogen and oxygen is set at hydrogen is superfluous to carry out, carries out the heat treatment of the upgrading of described semiconductor layer and described oxide-film.
11. the manufacture method as each described semiconductor device in the claim 1～10 is characterized in that,
Before carrying out described heat treated operation, carry out by the operation of etching method to the semiconductor layer composition of film forming on described substrate.
12. the manufacture method as each described semiconductor device in the claim 1～11 is characterized in that,
Described heat treatment forms the flame of described gas burner by linearity, utilizes this linearity flame relatively to scan described semiconductor layer and carries out.
13. the manufacture method as each described semiconductor device in the claim 1～12 is characterized in that,
Adjust the distance of described gas burner and described substrate, impose on the temperature or the pressure of the flame of this semiconductor layer with adjustment.
14. the manufacture method as each described semiconductor device in the claim 1～13 is characterized in that,
Adjust the posture of described gas burner, impose on the pressure of the flame of this semiconductor layer with adjustment with respect to described substrate.
15. the manufacture method as each described semiconductor device in the claim 1～14 is characterized in that,
Described gas burner comprises: the wireway of deriving mist; And shutter, it comprises the spray nozzle part that coats described wireway and make the combustion chamber of mist burning and discharge burning gases.
16. the manufacture method of semiconductor device as claimed in claim 15 is characterized in that,
On described wireway, be formed with a plurality of peristomes, from this peristome irradiation flame with certain spacing.
17. the manufacture method as each described semiconductor device in the claim 1～16 is characterized in that,
In the mist of described hydrogen and oxygen, add inert gas, to adjust the temperature of described flame.
18. the manufacture method as each described semiconductor device in the claim 1～17 is characterized in that,
At described substrate of indoor configuration and gas burner,
To described indoor importing inert gas, to adjust indoor pressure.
19. the manufacture method as each described semiconductor device in the claim 1～18 is characterized in that,
Be included in the operation of carrying out before the described heat treatment and/or heating described substrate in handling.
20. the manufacture method of an electronic equipment is characterized in that,
Manufacture method with each described semiconductor device in the claim 1～19.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005329205 | 2005-11-14 | ||
| JP2005329205 | 2005-11-14 | ||
| JP2006277889 | 2006-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1975992A true CN1975992A (en) | 2007-06-06 |
Family
ID=38125938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610146405 Pending CN1975992A (en) | 2005-11-14 | 2006-11-13 | Semiconductor device fabrication method and electronic device fabrication method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1975992A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169827A (en) * | 2010-02-25 | 2011-08-31 | 三菱电机株式会社 | Method of manufacturing a semiconductor device |
-
2006
- 2006-11-13 CN CN 200610146405 patent/CN1975992A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169827A (en) * | 2010-02-25 | 2011-08-31 | 三菱电机株式会社 | Method of manufacturing a semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1244891C (en) | Active matrix display | |
| CN1129955C (en) | Method for manufacturing semiconductor | |
| CN1264199C (en) | Production method for semiconductor device | |
| CN1229185C (en) | Drop output method and device, liquid crystal device and mfg, method, and electronic device | |
| CN1286156C (en) | Method for mfg. semiconductor device | |
| CN1169015C (en) | Thin film device having coating film, liquid crystal panel, electronic apparatus and method of manufacturing the thin film device | |
| CN1269196C (en) | Method for making thin-film semiconductor device | |
| CN1293647C (en) | Semiconductor device and manufacturing method thereof | |
| CN1263159C (en) | Semiconductor device and its mfg. method | |
| CN1366341A (en) | Semiconductor device and its making method | |
| CN1428817A (en) | Film forming device and film forming method, and cleaning method | |
| CN1577775A (en) | Method for manufacturing semiconductor device | |
| CN1645562A (en) | Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment | |
| CN1284741A (en) | Laser device, laser annealing method and method for manufacturing semiconductor device | |
| CN1928149A (en) | Deposition device | |
| CN1893114A (en) | Semiconductor device having ferroelectric film as gate insulating film and manufacturing method thereof | |
| CN1570204A (en) | Film-forming method, semiconductor device, method of manufacturing semiconductor device, display device and method of manufacturing display device | |
| CN1873933A (en) | Semiconductor device and manufacturing method thereof | |
| CN1097300C (en) | Thin-film semiconductor device, its method for making the same, liquid crystal display equipment and method for making the same | |
| CN1871711A (en) | Display device, method for manufacturing same, and television receiver | |
| CN1275300C (en) | Laser radiation method, laser radiation equipment and manufacture of semiconductor device | |
| CN101221906A (en) | Method of fabricating semiconductor device and method for fabricating electronic device | |
| CN1235273C (en) | Insulation film mfg. device | |
| CN1975992A (en) | Semiconductor device fabrication method and electronic device fabrication method | |
| CN1862789A (en) | Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |