CN1975978A - Image display device - Google Patents

Image display device Download PDF

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Publication number
CN1975978A
CN1975978A CNA2006101608486A CN200610160848A CN1975978A CN 1975978 A CN1975978 A CN 1975978A CN A2006101608486 A CNA2006101608486 A CN A2006101608486A CN 200610160848 A CN200610160848 A CN 200610160848A CN 1975978 A CN1975978 A CN 1975978A
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CN
China
Prior art keywords
substrate
image display
display device
containment member
antistatic layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101608486A
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Chinese (zh)
Inventor
尹海洙
宫崎秀树
李元馥
池现喆
吴爀根
郑升喜
申淳澈
石俸京
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of CN1975978A publication Critical patent/CN1975978A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86Vessels; Containers; Vacuum locks
    • H01J29/867Means associated with the outside of the vessel for shielding, e.g. magnetic shields
    • H01J29/868Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/868Passive shielding means of vessels
    • H01J2329/8685Antistatic shielding

Abstract

An image display device includes a vacuum vessel having first and second substrates facing each other, and a sealing member disposed between the first and the second substrates. An electron emission unit is provided on a surface of the first substrate facing the second substrate, and a light emission unit is provided on a surface of the second substrate facing the first substrate. Anode leads are drawn from the light emission unit to one-side of the periphery of the second substrate, extending over the inside and the outside of the sealing member. An anti-static layer is provided at the boundary area between the anode lead and the sealing member within the vacuum vessel.

Description

Image display device
Technical field
The present invention relates to image display device, more specifically, relate to a kind of at vacuum tank (vacuumvessel) thus in suppress the image display device that charging prevents arc discharge.
Background technology
Usually, use the electronic emission element of cold cathode to have field emission array (FEA) type, surface conductive emission (SCE) type, metal-insulator-metal type (MIM) type, and metal-insulator semiconductor (MIS) type.
Though electronic emission element is distinguished on concrete structure to some extent according to its type, they include basically and are provided in the electron-emitting area on the substrate and are used to control the On/Off of electronics emission and the drive electrode of quantity.This electronic emission element can be used as such as the light source of back light unit or as the electron emission structure of image display device.
In the image display device that uses electronic emission element, electron-emitting area and drive electrode are formed on first substrate, and fluorescence coating and anode electrode are formed at facing on the surface of first substrate of second substrate together, so that fluorescence coating is in high potential state.
First substrate and second substrate utilize containment member and sealing each other at their periphery, thereby constitute vacuum tank.Anode electrode is connected to external power source by positive wire, and to receive the required high voltage of accelerated electron beam, wherein positive wire is formed on second substrate and extends above containment member inside and outside.
In image display device, because the effect of electron-emitting area and drive electrode, electronics is launched from electron-emitting area.These electronics quicken towards second substrate, and collide fluorescence coating, follow the fluorescence excitation layer and send luminous ray.
But, after fluorescence coating was excited, electronics did not flow out apace, but accumulated in the inside of vacuum tank, thereby caused charging.
Charging has caused arc discharge, thereby has destroyed electron emission structure and reduced vacuum degree, and then makes the characteristic degradation of product.In addition, in the normal image display unit, put on the high voltage degree predetermined of anode electrode, will improve screen intensity like this and just become very difficult owing to arc discharge is limited to.
Summary of the invention
According to the present invention, provide a kind of image display device, it prevents the arc discharge that charges and bring thus in vacuum tank, and then has improved screen intensity.
According to an aspect of the present invention, a kind of image display device comprises vacuum tank, and it has first substrate and second substrate that faces with each other, thereby and is placed between first substrate and second substrate these two containment members that substrate seals each other.Described vacuum tank has the active region that is in described containment member inside; With non-active region around the described active region that is in described containment member inside.Electron emission unit is provided in the place, active region of first substrate.Optical Transmit Unit is provided in the place, active region of second substrate, to launch owing to the luminous ray that produces from described electron emission unit electrons emitted.Antistatic layer is provided at least a portion in described inactive surface zone.
Positive wire can be pulled to a side of described second substrate periphery from described Optical Transmit Unit, and extends above described containment member inside and outside.Described antistatic layer covers the inwall of described containment member and the borderline region between the described positive wire.
Described antistatic layer can be for having the band shape of preset width, and covering described positive wire, to be in described containment member inner and around the surface portion of described borderline region and the part of described containment member inwall.Described antistatic layer has the width bigger than the width of described positive wire.
Replacedly, described antistatic layer can be formed on the whole inactive surface zone of first substrate, comprise on the whole inactive surface zone of second substrate of described positive wire, and on the whole inwall of described containment member.
Described antistatic layer is about 1 material by the secondary electrons emission ratio to be made, for example by chromium oxide Cr 2O 3Make.Replacedly, described antistatic layer is made by the metal oxide based on metal material, and described metal material is selected from the group of being made up of the combination of Cr, Mn, Fe, Co, Y, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Ru and above-mentioned material.
Described vacuum tank further has reinforcement members, and its rear portion that is provided in first substrate is forming the inner space with first substrate, and first substrate has a through hole in described vacuum tank at least.Replacedly, described vacuum tank further comprises the reinforcement substrate, and it is connected to the rear portion of first substrate, and described reinforcement substrate has the thickness bigger than the thickness of first substrate.By utilizing described vacuum tank, need between first substrate and second substrate, not provide any sept.
Description of drawings
Fig. 1 is the decomposition diagram according to the image display device of first embodiment of the invention;
Fig. 2 is second substrate of image display device shown in Figure 1 and the bottom view of containment member;
Fig. 3 is the partial section according to the image display device of first embodiment of the invention;
Fig. 4 is the partial section according to the image display device of second embodiment of the invention;
Fig. 5 is according to second substrate of the image display device of second embodiment of the invention and the bottom view of containment member;
Fig. 6 is the partial section according to the image display device of first embodiment of the invention that is used for FEA type display unit;
Fig. 7 is the cross-sectional view according to the image display device of third embodiment of the invention; With
Fig. 8 is the cross-sectional view according to the image display device of fourth embodiment of the invention.
Embodiment
As Fig. 1, Fig. 2 and shown in Figure 3, comprise first substrate 2 and second substrate 4 that be arranged in parallel and face with each other with preset distance according to the image display device of first embodiment of the invention.Periphery at first substrate 2 and second substrate 4 provides containment member 6, so that the two is sealed each other.First substrate 2, second substrate 4 and containment member 6 have formed vacuum tank 8.
In the periphery of containment member 6, first substrate 2 and second substrate 4 comprise the active region and center on the inactive area of this active region.Electron emission unit 10A is provided at the active region place of first substrate 2, with to second substrate, 4 emitting electrons.The transmitter unit 12A of elder generation is provided at the place, active region of second substrate 4, with emission because the luminous ray that electronics causes, thereby luminous and demonstration desired images.
Electron emission unit 10A has electron-emitting area; Be used to control from the On/Off of the electronics emission of described electron-emitting area and the drive electrode of quantity; And another electrode that is used for the track of correcting electronic bundle.That Optical Transmit Unit 12A for example has is red, the fluorescence coating of green and blue fluorescent body and be used to make described fluorescence coating to remain on the anode electrode of high potential state.
Optical Transmit Unit 12A comprises the positive wire (anodelead) 14 that is used for voltage is applied to anode electrode.Positive wire 14 is pulled to a side of second substrate, 4 peripheries from Optical Transmit Unit 12A, and the inactive area and outside extension of containment member 6.
Positive wire 14 is provided at a side location of second substrate 4 in pairs.Along with hundreds of volts to thousands of volts direct current (DC) voltages are applied in positive wire 14, they have enough big width so that internal resistance descends.Positive wire 14 can be by such as the metal material with high conductivity of chromium Cr and make.
In the present embodiment, containment member 6 has: bracing frame 16, and it is used for first substrate 2 and second substrate 4 are separated with preset distance each other; With adhesive layer 18, it is placed between first substrate 2 and the bracing frame 16 and between second substrate 4 and the bracing frame 16, thus with these two base plate bondings to bracing frame 16.
Bracing frame 16 is by glass, pottery, glass-ceramic mixture, tempered glass, or pottery-tempered glass mixture and making, and in an exemplary embodiment, support frame as described above has and first substrate 2 and second substrate, 4 identical or similar thermal coefficient of expansions.Adhesive layer 18 mainly is made of glass dust, so that first substrate 2 and second substrate 4 are adhered to bracing frame 16, and prevents vacuum leak simultaneously.
Replacedly, containment member 6 can only be formed by welding rod (frit bar), and bracing frame is omitted.
In the present embodiment, antistatic layer 20 is formed at the inactive area place, inside of vacuum tank 8, to suppress the gathering of electric charge.Antistatic layer 20 covers the inwall of the containment member 6 that contacts with each other and the frontier district between the positive wire 14.
Specifically, antistatic layer 20 can form the band shape with preset width.Antistatic layer 20 covers the part that positive wire 14 is in containment member 6 inside, the border between the inwall of containment member 6 and the positive wire 14, and the inwall of containment member 6.In order to suppress charging effectively, the width that antistatic layer 20 has can be greater than the width that is positioned at containment member 6 inside of positive wire 14.
In the present embodiment, antistatic layer 20 can be provided in pairs corresponding to the number of positive wire 14.
Antistatic layer 20 can suppress to concentrate on the charging that following location is carried out, be that high voltage is based on the positive wire 14 of conductor with based on the contact area between the containment member 6 of insulator, the inwall of the containment member 6 that just, contacts with each other and the borderline region between the positive wire 14.
Antistatic layer 20 is about 1 material by the secondary electrons emission ratio that does not charge and makes, for example, and by chromium oxide Cr 2O 3Make.Antistatic layer 20 can be by silk screen printing or sputter coating with alite paste or comprise the liquid mixture of chromium oxide and easily constitute.
Replacedly, antistatic layer 20 can be made by the metal oxide based on metal material, and described metal material is selected from Cr, Mn, Co, Y, Ni, Zr, Nb, Mo, Hf, Ta, W, Ru or its combination.In this case, antistatic layer 20 can easily form by sputter.
Therefore, in described image display device, in described vacuum tank, concentrate the charging of carrying out to be inhibited by antistatic layer 20, thereby prevent because the arc discharge that charging may cause according to present embodiment.The result is, can prevent effectively that electron emission unit 10A and Optical Transmit Unit 12A are destroyed, and the vacuum degree of described vacuum tank is remained unchanged.Even when about 10kV or bigger high voltage are applied in anode electrode 38, also can prevent arc discharge, and strengthen screen intensity according to the raising of anode voltage.
As shown in Figure 4 and Figure 5, have the structure identical basically according to the image display device of second embodiment of the invention, but the area of antistatic layer is enlarged further with the image display device that relates to first embodiment.
In the present embodiment, antistatic layer 20 ' be formed on as on the lower part, promptly directly be exposed to the whole inactive surface zone of first substrate 2 of vacuum environment, comprise the whole inactive surface zone of second substrate 4 of positive wire 14, and the whole inwall of containment member 6.Antistatic layer 20 ' can by with relevant before among the embodiment antistatic layer the material identical materials and make.
Antistatic layer 20 ' inhibition electric charge is in the lip-deep gathering based on first substrate 2 and second substrate 4 and the containment member 6 of dielectric glass, thereby prevents the arc discharge that takes place owing to the electric charge of being assembled in described vacuum tank.
In the accompanying drawings, Reference numeral 10B represents electron emission unit, and Reference numeral 12B represents Optical Transmit Unit, and identical reference number is used to represent other structural detail.
Described image display device according to first and second embodiment can be FEA type, SCE type, mim type and MIS type image display device.The structure of FEA type image display device is carried out brief description with reference to Fig. 6.
As shown in Figure 6, the electron emission unit 10C that is provided on first substrate 2 comprises: as the cathode electrode 22 and the gate electrode 24 of drive electrode; First insulating barrier 26, it is placed between cathode electrode 22 and the gate electrode 24 and the two is insulated from each other; Electron-emitting area 28, it is electrically connected to cathode electrode 22; Focusing electrode 30, it is placed in the top of gate electrode 24; With second insulating barrier 32, it is placed between gate electrode 24 and the focusing electrode 30 so that the two is insulated from each other.
But the material of electron-emitting area 28 emitting electrons when applying electric field under vacuum environment and making is for example made by the material of carbonaceous material and nano-scale.Replacedly, described electron-emitting area can be by based on the most advanced and sophisticated shape structure of molybdenum Mo or silicon Si and make.
The Optical Transmit Unit 12C that is provided on second substrate 4 comprises redness, green and blue fluorescent body 34; Black layer 36, it is placed between each corresponding fluorescence coating 34 to improve Display Contrast; With anode electrode 38, it is formed on fluorescence coating 34 and the black layer 36.Anode electrode 38 can be by making such as the metal material of aluminium Al.Anode electrode 38 will reflect from fluorescence coating 34 to first substrates 2 visible light emitted alignments second substrate 4, thereby improve screen intensity.
Sept 40 is set between first substrate 2 and second substrate 4, bearing the pressure that puts on described vacuum tank, and with these two substrates predetermined distance that separates each other.Sept 40 is placed corresponding to black layer 36, makes the zone that described black layer does not disturb fluorescence coating 34.
By adopting said structure, an electrode in cathode electrode 22 and the gate electrode 24 receives turntable driving voltage, and another electrode receives data drive voltage.The needed voltage of focusing electrode 30 collectiong focusing electron beams, for example, the negative dc voltage of 0V or several volts to tens volts.Anode electrode 38 receives the required voltage of accelerated electron beams, for example hundreds of and even thousands of volts positive dc voltage.
Then, because the voltage difference between cathode electrode 22 and the gate electrode 24 produced electric field around electron-emitting area 28, and electronics is launched from these electron-emitting areas 28.The institute electrons emitted then is focused the center in electron beam through the opening portion of focusing electrode 30, and the high voltage that is applied in anode electrode 38 attracts, thus impact fluroescence layer 34 and described fluorescence coating excited and luminous.
In the present embodiment, the antistatic layer of the antistatic layer of relevant first embodiment or relevant second embodiment is formed at the non-active region place, inside of described vacuum tank.
As noted before, sept 40 is set between first substrate 2 and second substrate 4, thereby with the two predetermined distance that separates each other.Replacedly, do not need described sept is arranged between first substrate 2 and second substrate 4, can obtain stable vacuum tank yet.Now with reference to Fig. 7 the image display device with this vacuum tank according to third embodiment of the invention is described.
As shown in Figure 7, vacuum tank 8 ' comprising: first substrate 2 and second substrate 4, it faces with each other by inserting first area 100, and by utilizing containment member 6 to be connected to each other; With reinforcement members 42, it is connected to the rear portion of first substrate 2, to form second area 200 with first substrate 2.First area 100 and second area 200 pairing spaces are by first substrate 2 separately.Through hole 44 is formed on first substrate 2, makes first area 100 and second area 200 communicate with each other by described through hole.
Electron emission unit 10D is provided in facing on the surface of second substrate 4 of first substrate 2, and Optical Transmit Unit 12D and positive wire 14 are formed at facing on the surface of first substrate 2 of second substrate 4.The part of the inwall of the part that is placed in containment member 6 inside of antistatic layer 20 covering positive wires 14, the inwall of containment member 6 and border between the positive wire 14 and containment member 6.
In one embodiment, second substrate 4 can be formed and have enough big thickness to bear vacuum pressure, for example, has 10 millimeters or bigger thickness.On the contrary, can be formed and have thickness, for example, have 5 millimeters or littler thickness less than second substrate 4 because vacuum pressure is not applied in first substrate, 2, the first substrates 2.
As mentioned above, first substrate 2 is a kind of like this substrates, and it has: electron-emitting area; With various electrode, it is used to control On/Off and quantity from the electronics emission of described electron-emitting area, and the track of electron beam.During the process that forms electron-emitting area, electrode and internal electrode insulating barrier, carried out multiple high temp heat treatment.In this process, even being 5 millimeters or littler first substrate 2, thickness under the violent situation of variations in temperature, also has low thermal stress, so just can prevent that first substrate 2 is damaged, and the layer that can improve electron emission unit 10D becomes characteristic.
Reinforcement members 42 demonstrated vacuum tank 8 ' profile, but not the profile of first substrate 2, and reinforcement members 42 has sunk part 46 is to form the second area 200 that is centered on by first substrate 2 and reinforcement members 42.Second area 200 is configured to have the volume bigger than first area 100.Reinforcement members 42 has: steam vent 48 and blast pipe 50 are used for inside configuration is discharged; With getter spare (not shown), thereby it is used to absorb discharging residual gas gas clean-up afterwards.
Vacuum tank 8 ' internal capacity obtain enlarging by forming first area 100 and second area 200, like this, distance between first substrate 2 and second substrate 4 is held constant, and do not need to be provided with sept in the first area 100 places, thereby obtain a kind of stable structure.Along with vacuum tank 8 ' the expansion of internal capacity, its internal vacuum can be enhanced about 10 -6Holder or higher, and the deterioration of vacuum degree is owing to the degasification that product carried out between the operating period is compensated, thus the good quality production characteristic is provided.
And, strengthen substrate and can be provided in the rear portion of first substrate 2 and replace above-mentioned reinforcement members 42.Fig. 8 is the cross-sectional view according to the image display device of fourth embodiment of the invention.As shown in Figure 8, strengthen the rear portion that substrate 52 is connected to first substrate 2, make the substrate 2 of winning, second substrate 4 and strengthen substrate 52 to form vacuum tank 8 ".
Strengthen substrate 52 and have the thickness bigger than first substrate.On first substrate 2, form all pass through for a plurality of layers the step of electron emission unit 10E after, strengthen that substrate 52 utilizes adhesive layer 54 and the rear portion that is connected to first substrate 2.In order to bear vacuum pressure, the thickness of strengthening substrate 52 can be 10 millimeters or bigger, and in an exemplary embodiment is 15 millimeters or bigger.As shown in Figure 8, Reference numeral 12E represents Optical Transmit Unit.
Even adopt described image display device, also be formed at the non-active region place, inside of described vacuum tank about the antistatic layer of first embodiment and second embodiment according to the 3rd embodiment and the 4th embodiment.The antistatic layer 20 that Fig. 7 and 8 shows relevant first embodiment be formed at vacuum tank 8 ' and 8 " in situation.
Though exemplary embodiment of the present invention has obtained describing in detail hereinbefore, but should clearly be understood that, the multiple variation and/or the modification of the basic inventive concept of those skilled in the art's perceptible this place instruction will fall into as among the spirit and scope of the present invention defined in the appended claims.

Claims (15)

1, a kind of image display device comprises:
Vacuum tank, it has first substrate and second substrate that faces with each other, and place containment member between first substrate and second substrate, described vacuum tank has the active region that is in described containment member inside and centers on the described non-active region that is in the active region of described containment member inside;
Electron emission unit, it is provided in the place, active region of first substrate;
Optical Transmit Unit, it is provided in the place, active region of second substrate, to launch owing to the luminous ray that produces from described electron emission unit electrons emitted; With
Antistatic layer, it is provided at least a portion in described inactive surface zone.
2, image display device as claimed in claim 1, further comprise positive wire, it is pulled to a side of second substrate periphery from described Optical Transmit Unit, and above described containment member inside and outside, extend, wherein said antistatic layer covers the inwall of described containment member and the borderline region between the described positive wire.
3, image display device as claimed in claim 2, wherein said antistatic layer is the band shape with preset width, and covering described positive wire, to be in described containment member inner and around the part of the inwall of the surface portion of described borderline region and described containment member.
4, image display device as claimed in claim 3, wherein said antistatic layer have the width bigger than the width of described positive wire.
5, image display device as claimed in claim 3, wherein said positive wire are provided in pairs the side in second substrate periphery, and described antistatic layer is provided in pairs corresponding to described positive wire.
6, image display device as claimed in claim 2, wherein said antistatic layer is formed on the whole inactive surface zone of first substrate, comprise on the whole inactive surface zone of second substrate of described positive wire, and on the whole inwall of described containment member.
7, image display device as claimed in claim 1, wherein said antistatic layer are about 1 material by the secondary electrons emission ratio and make.
8, image display device as claimed in claim 7, wherein said antistatic layer is by chromium oxide Cr 2O 3Make.
9, image display device as claimed in claim 7, wherein said antistatic layer is made by the metal oxide based on metal material, and described metal material is selected from the group of being made up of the combination of Cr, Mn, Fe, Co, Y, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Ru and above-mentioned material.
10, image display device as claimed in claim 1, wherein said vacuum tank further comprises reinforcement members, this reinforcement members is provided in the rear portion of first substrate and forms the inner space with first substrate, and first substrate is included in a through hole in the described vacuum tank at least.
11, image display device as claimed in claim 1, wherein said vacuum tank further comprises the reinforcement substrate, this reinforcement substrate is connected to the rear portion of first substrate, and has the thickness bigger than the thickness of described first substrate.
12, image display device as claimed in claim 1, wherein said electron emission unit comprises the electron-emitting area with cold-cathode electron source.
13, image display device as claimed in claim 1, wherein said electron emission unit comprise cathode electrode and the gate electrode that is separated from each other by insulating barrier; With the electron-emitting area that is electrically connected to described cathode electrode.
14, image display device as claimed in claim 13 further comprises focusing electrode, and this focusing electrode is positioned at described cathode electrode and gate electrode top, and described focusing electrode insulate mutually with described cathode electrode and gate electrode.
15, a kind of method that prevents arc discharge in the image display device, described image display device has vacuum tank, described vacuum tank is by pair of substrates facing each other and be positioned at this containment member at substrate periphery place is formed, described vacuum tank comprises Optical Transmit Unit, described Optical Transmit Unit has anode electrode and is used for described anode electrode is applied the positive wire of voltage, described positive wire is pulled to the periphery of described substrate from described Optical Transmit Unit, and above the non-active region of described containment member inside and described containment member outside, extend, this method comprises:
Non-active region in described vacuum tank inside forms antistatic layer, and described antistatic layer covers the inwall and the positive wire of the containment member in the described vacuum tank at least.
CNA2006101608486A 2005-11-30 2006-11-30 Image display device Pending CN1975978A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050115659 2005-11-30
KR1020050115659A KR20070056680A (en) 2005-11-30 2005-11-30 Electron emission display device
KR1020060038580 2006-04-28

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CN1975978A true CN1975978A (en) 2007-06-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576713A (en) * 2009-09-30 2012-07-11 法国圣戈班玻璃厂 Thin-film component on glass, a method for the production thereof and the use thereof
CN107393907A (en) * 2017-08-01 2017-11-24 厦门天马微电子有限公司 Display panel and display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102576713A (en) * 2009-09-30 2012-07-11 法国圣戈班玻璃厂 Thin-film component on glass, a method for the production thereof and the use thereof
US9099588B2 (en) 2009-09-30 2015-08-04 Saint-Gobain Glass France Thin-film component on glass, a method for the production thereof and the use thereof
CN107393907A (en) * 2017-08-01 2017-11-24 厦门天马微电子有限公司 Display panel and display device
CN107393907B (en) * 2017-08-01 2019-06-14 厦门天马微电子有限公司 Display panel and display device

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