CN1974880B - Dual bath apparatus for porous silicon preparing electrochemical process - Google Patents
Dual bath apparatus for porous silicon preparing electrochemical process Download PDFInfo
- Publication number
- CN1974880B CN1974880B CN200610129434A CN200610129434A CN1974880B CN 1974880 B CN1974880 B CN 1974880B CN 200610129434 A CN200610129434 A CN 200610129434A CN 200610129434 A CN200610129434 A CN 200610129434A CN 1974880 B CN1974880 B CN 1974880B
- Authority
- CN
- China
- Prior art keywords
- porous silicon
- clamping plate
- substrate
- bath apparatus
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Weting (AREA)
Abstract
The present invention relates to porous silicon preparing apparatus, and is especially one kind of dual bath apparatus for electrochemical process to prepare porous silicon. The dual bath apparatus includes one bath body with fixing slot, one concave plate inserted inside the slot, one base plate and one cushion plate connected with screws to form one concave tank, one clamping plate with severalparallel etching windows set in the concave tank, and one other clamping plate with several parallel etching windows possessing notches. The present invention has the advantages of simple porous silicon preparing process, and the prepared porous silicon has homogeneous pore size, homogeneous porosity and layer thickness.
Description
Technical field
The present invention relates to a kind of dual bath apparatus of porous silicon preparing electrochemical process, belong to the device for preparing porous silicon.
Background technology
The preparation method of porous silicon mainly contains electrochemical process (anodic corrosion), the corrosion of corrosion spark erosion hydro-thermal etc. at present.Electrochemical process can be divided into double flute electrochemical process and single groove electrochemical process by its device.Its principle is for to allow electric current pass silicon base under the environment of hydrofluoric acid-ethanol etchant solution, and silicon face is corroded gradually selectively near a side of electrode cathode, forms the porous silicon cell texture.
The process of single groove porous silicon preparing electrochemical process is based on the generation of galvanic couple electric current.Plate the layer of metal layer at the back side of silicon substrate as electrode (being generally platinum), place it in the electrolyte solution.The metal level at silicon substrate and its back side contacts in electrolyte solution, because the standard potential of silicon is lower than the current potential of used metal, can produce the galvanic couple electric current between them, the difference of this current potential causes the galvanic couple electric current to flow into silicon substrate, the surface is just shifted in hole in the silicon substrate, with electrolyte solution generation electrochemical reaction, Siliciumatom is dissolved in the solution, thereby silicon chip is carried out galvanic corrosion.Adopt single electrolytic cell assembly to prepare porous silicon, the silicon substrate back side will link to each other with anode, for reducing ohmic contact, must be to a series of processing such as metallize of the silicon substrate back side, this process has not only increased the complicacy of operation, and the thickness of metal film homogeneity is wayward, causes porous silicon aperture size, porosity and porous silicon layer in uneven thickness easily.
Summary of the invention
The dual bath apparatus that the purpose of this invention is to provide a kind of porous silicon preparing electrochemical process.This device realizes that the technological process of preparation porous silicon is simple, and the porous silicon aperture size that makes, porosity and porous silicon layer thickness are even.
The present invention is realized by the following technical programs: a kind of dual bath apparatus of porous silicon preparing electrochemical process: the polypropylene manufacturing that this dual bath apparatus adopts the corrosion of anti-hydrofluoric acid and is easy to mechanical workout forms, it is characterized in that, comprise cell body 1, in cell body, offer fixed slot on the cell wall of length direction and the bottom land, on fixed slot, insert " recessed " shape substrate 2, two ends at the close cell body wall of substrate 2, adopt screw 5 with pressing plate 4, backing plate 3 between substrate 2 and substrate 2 and the pressing plate 4 connects as one, between the Baltimore groove that is constituted by substrate 2 and pressing plate 4 and backing plate 3, the clamping plate 6 of offering at least two parallel corrosion windows on the surface are set, face toward the clamping plate 7 of offering at least two parallel corrosion windows that have the flake hole on the internal surface of clamping plate 6 with being provided with.
Corrosion window on the above-mentioned clamping plate is a rectangle, circle, and trilateral, trapezoidal, interdigitated.
The invention has the advantages that: this device has simple in structure, convenience operation; Adopt this device preparation porous silicon, its process is two and half grooves about silicon chip is divided into whole cell body, replace the silicon substrate back metal with platinum electrode, electric current forms path along platinum electrode-corrosive fluid-silicon chip-corrosive fluid-platinum electrode, therefore prepared porous silicon aperture size size is even, and porosity and porous silicon layer thickness are even.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is an A-A sectional view among Fig. 1.
Structural representation when Fig. 3 is rectangle for the corrosion window of Fig. 1 spare 7.
Structural representation when Fig. 4 is four interdigitated for the corrosion window of Fig. 1 spare 7.
Among the figure: 1 is cell body, and 2 is substrate, and 3 is backing plate, and 4 is pressing plate, and 5 is screw, and 6 for having the clamping plate of corrosion window, and 7 have the clamping plate in flake hole for corrosion window.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
It is the thick polypropylene sheet material of 1cm that cell body 1 is selected thickness for use, adopt bonding mode, be of a size of 14cm * 11cm * 10cm by the length and width height and be made as rectangular structure, the upper surface open-ended, inboard at etching tank middle part then (comprising the bottom) offers that 1 road is wide to be the fixed slot of 0.5cm, on fixed slot, insert " recessed " font substrate 2, for increasing stopping property, around substrate, twine with sealed strip, " recessed " font substrate thickness is 0.5cm, width is 10cm, highly is 9.5cm, and removing part in the middle of " recessed " shape is 4cm * 7.5cm rectangle.On two side plates of " recessed " shape substrate pressing plate 4 is set respectively, pressing plate 4 thickness are 0.5cm, and size 2.3cm * 8.5cm is provided with backing plate 3 between substrate 2 and pressing plate 4, and backing plate 3 thickness are 1cm, are of a size of 1.6cm * 8.5cm.At least adopt three screws to connect substrate, backing plate pressing plate, screw 5 spacings are 1.8cm, and radius is 0.4cm, and length is 2.2cm.Between the Baltimore groove of backing plate and pressing plate formation clamping plate 6 and clamping plate 7 are set, clamping plate thickness is 0.5cm, is of a size of 5.4cm * 9cm, for increasing stopping property, seals with sealed strip around two clamping plate.In the present embodiment, on two clamping plate, offer three parallel corrosion windows that are arranged above and below, corrosion window is made up of a rectangle and two semicircles, rectangular dimension is 1.6cm * 0.4cm, the semicircle radius is 0.4cm, offers to be of a size of the flake hole that 2.4cm * 1cm degree of depth is 0.04cm around a corrosion window of clamping plate 7.
It is as follows to adopt above-mentioned dual bath apparatus to prepare the process of porous silicon, will treat that the corrosive silicon chip cuts into the fritter of 2.3cm * 0.9cm size, places it in the flake hole of clamping plate 7.The corrosive fluid of an amount of same concentrations on containing in two and half cell bodies, corrosive fluid is that 40% hydrofluoric acid and 1: 1 by volume proportioning of 95% dehydrated alcohol are formed by massfraction.Two platinum electrodes are inserted respectively in the corrosive fluid of two and half grooves, and making current begins corrosion.If silicon chip is a single-sided polishing, then negative electrode is inserted in polished surface institute to side corrosion end, extracts clamping plate, takes out silicon chip, changes silicon chip, inserts again, continues next group and tests.
Claims (2)
1. the dual bath apparatus of a porous silicon preparing electrochemical process, the polypropylene manufacturing that this dual bath apparatus adopts the corrosion of anti-hydrofluoric acid and is easy to mechanical workout forms, it is characterized in that: comprise cell body (1), in cell body, offer fixed slot on the cell wall of length direction and the bottom land, on fixed slot, insert " recessed " shape substrate (2), two ends at the close cell body wall of substrate (2), adopt screw (5) with pressing plate (4), backing plate (3) between substrate (2) and substrate (2) and the pressing plate (4) connects as one, between the Baltimore groove that is constituted by substrate (2) and pressing plate (4) and backing plate (3), first clamping plate (6) of offering at least two parallel corrosion windows on the surface are set, with second clamping plate (7) that are provided with facing to first clamping plate (6), offer at least two parallel corrosion windows that have the flake hole on the internal surface of second clamping plate (7).
2. by the dual bath apparatus of the described porous silicon preparing electrochemical process of claim 1, it is characterized in that the corrosion window on the clamping plate is rectangle, circle, trilateral, trapezoidal or interdigitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610129434A CN1974880B (en) | 2006-11-16 | 2006-11-16 | Dual bath apparatus for porous silicon preparing electrochemical process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610129434A CN1974880B (en) | 2006-11-16 | 2006-11-16 | Dual bath apparatus for porous silicon preparing electrochemical process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1974880A CN1974880A (en) | 2007-06-06 |
| CN1974880B true CN1974880B (en) | 2010-05-12 |
Family
ID=38125220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610129434A Expired - Fee Related CN1974880B (en) | 2006-11-16 | 2006-11-16 | Dual bath apparatus for porous silicon preparing electrochemical process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1974880B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188083A (en) * | 2020-01-23 | 2020-05-22 | 河南理工大学 | Method for electrochemically preparing porous silicon with full-surface luminescence |
| CN111321454A (en) * | 2020-03-05 | 2020-06-23 | 河南理工大学 | Method for preparing luminous porous silicon in parallel arrangement |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115023B (en) * | 2009-12-30 | 2012-10-17 | 中国科学院微电子研究所 | Clamp structure for protecting back surface and front surface of MEMS chip by wet chemical corrosion |
| CN102418138B (en) * | 2011-08-08 | 2014-02-05 | 南京航空航天大学 | Porous silicon preparing device for gross-area device transfer |
| CN102953113A (en) * | 2012-10-19 | 2013-03-06 | 天津大学 | Method for preparing silicon-based nano-scale ordered porous silicon |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412322A (en) * | 2002-11-22 | 2003-04-23 | 华东师范大学 | Preparation method of porous silicon substrate for bearing high integrated level CDMA microarray |
| CN1436878A (en) * | 2003-02-27 | 2003-08-20 | 复旦大学 | Prepn of porous luminescent material |
-
2006
- 2006-11-16 CN CN200610129434A patent/CN1974880B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412322A (en) * | 2002-11-22 | 2003-04-23 | 华东师范大学 | Preparation method of porous silicon substrate for bearing high integrated level CDMA microarray |
| CN1436878A (en) * | 2003-02-27 | 2003-08-20 | 复旦大学 | Prepn of porous luminescent material |
Non-Patent Citations (5)
| Title |
|---|
| 吴克跃，黄伟其，许丽.多孔硅的形成和发光.皖西学院学报22 5.2006,22(5),38-41. |
| 吴克跃,黄伟其,许丽.多孔硅的形成和发光.皖西学院学报22 5.2006,22(5),38-41. * |
| 崔梦.应用于MEMS中多孔硅显微结构及绝热性能的研究.天津大学硕士论文.2004,14-16. * |
| 田斌，胡明，张之圣.用电化学方法制备多孔硅.天津大学学报37 9.2004,37(9),823-826. |
| 田斌,胡明,张之圣.用电化学方法制备多孔硅.天津大学学报37 9.2004,37(9),823-826. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111188083A (en) * | 2020-01-23 | 2020-05-22 | 河南理工大学 | Method for electrochemically preparing porous silicon with full-surface luminescence |
| CN111321454A (en) * | 2020-03-05 | 2020-06-23 | 河南理工大学 | Method for preparing luminous porous silicon in parallel arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1974880A (en) | 2007-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6969664B2 (en) | Micro silicon fuel cell, method of fabrication and self-powered semiconductor device integrating a micro fuel cell | |
| CN1974880B (en) | Dual bath apparatus for porous silicon preparing electrochemical process | |
| Chen et al. | Effect of different gel electrolytes on graphene-based solid-state supercapacitors | |
| US7368191B2 (en) | Electrode array for use in electrochemical cells | |
| EP0970530B1 (en) | Method for manufacturing a bipolar plate | |
| CN1555428A (en) | Method and electrode for defining and replicating structures in conducting materials | |
| JP2002544649A (en) | Fuel cells and membranes | |
| CN105088267A (en) | Electrolytic cell device provided with separated cathode and anode chambers and used for preparing ozone water through electrolysis | |
| DE50303544D1 (en) | Method for producing a galvanic element | |
| RU2012132260A (en) | FUEL ELEMENTS AND COMPONENTS OF FUEL ELEMENTS, ASYMMETRIC ARCHITECTURE, AND METHODS FOR THEIR MANUFACTURE | |
| WO2023036067A1 (en) | Gas diffusion layer and preparation method therefor | |
| CA2333017A1 (en) | Electrochemical battery structure and method | |
| KR20140018538A (en) | Method for preparation of the reduced graphene oxide(rgo) by electrochemical reduction | |
| US8304144B2 (en) | Fuel cell formed in a single layer of monocrystalline silicon and fabrication process | |
| CN101603938A (en) | Be used for micro-nano structure bismuth pole of trace heavy metal detection and preparation method thereof | |
| KR920702036A (en) | Electrochemical cell including rechargeable nickel electrode and method for manufacturing same | |
| CN105449221A (en) | Current collector preparation method | |
| CN100397687C (en) | Cathode flow field plate for self-breathing micro-proton exchange film fuel cell and producing method | |
| US10177367B2 (en) | Method for producing surface discharge electrodes and semifinished product for carrying out the method | |
| CN101482534B (en) | Heating type electro-chemical trace amount detection pool integrated on conductive glass | |
| AU2012291990A1 (en) | Working electrode printed on a substrate | |
| Rychagov et al. | Interaction of activated carbon electrodes with sulfuric acid solutions | |
| CN204138813U (en) | A kind of galvanic corrosion system preparing nano-structure porous silicon | |
| DE50114455D1 (en) | CELL ARRANGEMENT FOR AN ELECTRONIC ENERGY TRANSDUCER AND METHOD FOR PRODUCING SUCH A | |
| CN220084750U (en) | Electrolytic cell device for testing electrochemical performance of sample electrode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100512 Termination date: 20101116 |