CN1974461A - Zn doped PST film with adjustable dielectric constant and its prepn process - Google Patents
Zn doped PST film with adjustable dielectric constant and its prepn process Download PDFInfo
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Abstract
The present invention discloses one kind of Zn doped PST film with adjustable dielectric constant and its preparation process. The preparation process includes compounding precursor sol with strontium carbonate, lead acetate, zinc acetate and butyl titanate as material and glacial acetic acid and ethylene glycol monomethyl ether as solvent; coating the sol onto ITO conducting glass, silicon chip or glass substrate through a soaking and drawing process or rotary coating process; and sintering and heat treatment with fast temperature raising and controlled cooling. The technological process of the present invention is simple, low in cost, low in sintering temperature and compatible with semiconductor manufacture process. The prepared Zn doped PST film has high dielectric constant regulating performance and relatively low dielectric loss.
Description
Technical field
The present invention relates to the dielectric film technical field, specially refer to a kind ofly be rapidly heated, the thermal treatment process of controlled chilling prepares the dielectric-constant adjustable PST film and the preparation method of zinc doping.
Background technology
Phase shifter is a kind of important devices, a new generation's phase shifter is a dielectric phase shifter, dielectric phase shifter has many advantages, it is simple in structure, volume is little, in light weight, current consumption is few, response speed is fast, it is little, cheap to insert loss, phase shift system has numeral and simulates two kinds, can satisfy the needs of various different occasions.Dielectric phase shifter claims ceramic phase shifter again, being the dielectric coefficient that utilizes the non-linear microwave dielectric ceramic material of some low-loss changes with the variation of extra electric field intensity, the size that is added in the dc offset voltage on the medium by change is come the time-delay in the control radar signals transmission, thereby reaches the purpose of phase shift.Except being used as dielectric phase shifter, the multilayered structure that the nonlinear dielectric film combines with high-temperature superconducting thin film and forms, can prepare high Q resonator, its mid-frequency can be regulated by adding bias field, thereby can develop the voltage tuning microwave device that a quefrency is cut change, as adjustable machine oscillator of low phase noise of decoupling capacitance, filtering tuner, phase array antenna, portable communication and satellite communications etc., application prospect optimism.
Under the applying direct current electric field effect, the specific inductivity of material changes, and the material system that promptly presents non-linear character mainly comprises SrTiO
3, (Ba, Sr) TiO
3, (Pb, Sr) TiO
3, (Pb, Ca) TiO
3, Ba (Ti, Sn) O
3, Ba (Ti, Zr) O
3And KTaO
3With regard to adjustable dielectric materials, what study more, better performances at present mainly is strontium-barium titanate (BST) and doped series thereof, and generally about 50%, dielectric loss is 10 for its adjustability
-2On the magnitude, the figure of merit of concentrated expression material adjustability is generally below 300.Yoshitaka Somiya equals calendar year 2001 at International Journal of Inorganic Materials (Yoshitaka Somiya, Amar S.Bhalla, L.Eric Cross, International Journal of Inorganic Materials 3 (2001) 709-714) publish an article on and find that strontium lead titanate (PST) has higher adjustability and quite low dielectric loss, be a kind of mutual solubility perovskite ferroelectric materials preferably, its Curie-point temperature T
cCan more easily transfer near the room temperature, the dielectric temperature coefficient is bigger, is a kind of material that is highly suitable for the electric field adjusting element.As thin-film material, the ferroelectric critical size of PST is less, crystallization temperature is lower, the preparation method of sol-gel has further reduced the firing temperature of thin-film material again, make preparation technology and Si microelectronic technique compatibility, more can satisfy the needs that high performance Si basis set becomes circuit, to the miniaturization that promotes the modern device development with integratedly have a crucial meaning.
A lot of documents have all reacted the existence that the oxygen room lacks in the perovskite oxide, and the oxygen vacancy defect is to material
The influence of material dielectric properties comprises SrTiO
3, (Ba, Sr) TiO
3, (Pb, Sr) TiO, Pb (ZrTi) O
3Deng.Be published in article (A.K.Batra on the Nuclear Instruments and Methods in Physics Research as A.K.Batra etc., Padmaja Guggilla, Mohan Aggarwal, R.B.Lal, Nuclear Instrumentsand Methods in Physics Research B 246 (2006) 369-373) specific inductivity and Seebeck coefficient that the oxygen vacancy defect that is not neutralized can reduce PZT have been set forth, Y.R.Liu etc. are published in the article (Y.R.Liu of Materials Chemistryand Physics, P.T.Lai, G.Q.Li, B.Lia, J.B.Peng, H.B.Lo, MaterialsChemistry and Physics 94 (2005) 114-118) set forth the oxygen room among the BST and the oxygen room of BST-electrode sections and all can bring adverse influence the dielectric-constant adjustable of material.
A kind of as perovskite oxide, the PST thin-film material unavoidably also exists the oxygen vacancy defect, and the existence of this defective has certain influence to adjustability, must consider to reduce the quantity in oxygen room.Sometimes in order to reduce the detrimentally affect of oxygen double-void dielectric material performance, come agglomerated material as protective atmosphere by oxygen.Set forth use oxygen as protective atmosphere as the article (MaterialsChemistry and Physics 94 (2005) 114-118) that Y.R.Liu etc. is published on the Materials Chemistry and Physics, the uhligite phase film that sintering obtains has good dielectric-constant adjustable.Also can come modification by the behavior in the control oxygen room of mixing.As the open book (patent No.: describe the sol-gel preparation method of Mg/Mn/K doping PST film or powder 200510019948.2) in detail, showed Pb of the medium patent application of Zhao Xing at them
0.3Sr
0.7TiO
3After the K of proper concn doping or Ba solid solution, dielectric adjustable can be greatly increased.Wherein K and Ba all replace uhligite mutually in the position (uhligite mutually in A position) of Pb or Sr atom.But the present invention successfully passes through to introduce the close valency with titanium atom of the atomic radius zinc atom impurity littler than titanium, realized mixing with the zinc atom in the PST film of sol-gel method preparation, and utilize titanium position in the uhligite phase structure (uhligite mutually in B position) to mix, make zinc atom replace substitutional defect and the neutralization of oxygen vacancy defect that titanium atom produces, thereby fettered the oxygen room, limited the influence of oxygen vacancy defect, improved the dielectric adjustable of PST thin-film material dielectric properties.
Summary of the invention
The object of the present invention is to provide a kind of Zn doped PST film material and preparation method of dielectric-constant adjustable.
The technical solution adopted for the present invention to solve the technical problems is:
One, a kind of Zn doped PST film material of dielectric-constant adjustable
It is to mix Pb with Zn as impurity
0.4Sr
0.6TiO
3The thin-film material of matrix, expression formula is: Pb
0.4Sr
0.6Ti
1-xZn
xO
3+x, wherein the molar content of Zn is 1%～12%, i.e. 1%≤x≤12%,
Film is perovskite structure, and Zn mixes the position of Ti in the perovskite structure.
Two, a kind of Zn doped PST film preparation methods of dielectric-constant adjustable
What adopt is that sol-gel (sol-gel) is rapidly heated, the heat-treatment technology method of controlled chilling, and its step is as follows:
1) strontium titanate, plumbic acetate, zinc acetate dissolve in acetic acid, add entry, the volume ratio of water and acetic acid is 1: 10～1: 4, plumbous concentration is 0.2mol/L～0.56mol/L, the concentration of strontium is 0.3mol/L～0.84mol/L, and zinc concentration is 0.005mol/L～0.084mol/L, and Heating temperature is 40～80 ℃, stirring makes its whole dissolvings, obtains the solution first;
2) butyl (tetra) titanate dissolves in ethylene glycol monomethyl ether, and controlling concn is 1mol/L～2mol/L, stirs, and obtains solution second;
3) two kinds of solution of first, second mix, stir, naturally cooling, adding acetic acid is controlled wherein, and Pb, Sr, four kinds of component concentrations of Ti, Zn are respectively: Pb:0.14mol/L～0.28mol/L, Sr:0.21mol/L～0.42mol/L, Ti:0.336mol/L～0.672mol/L, Zn:0.0035mol/L～0.042mol/L obtains precursor colloidal sol;
4) the precursor colloidal sol that utilizes step 3) to prepare adopts dipping method of pulling up plated film on substrate, immerses speed control at 2cm/min～6cm/min, stops 10～15sec, lifts substrate with identical speed again and goes out colloidal sol, and natural air drying obtains dry film; Perhaps adopt method plated film on substrate of spin coating whirl coating, spin speed is controlled at 300r/min～900r/min, keeps stopping behind the rotation 1min, and natural air drying obtains dry film;
5) dry film that step 4) is obtained is directly handled 10min～60min 550 ℃～600 ℃ stove interior heat, and controlled chilling speed obtains forming the film of complete uhligite crystalline phase in 50 ℃/h;
6) repeating step 4) and step 5) 2～8 times, Zn doped P ST film obtained.
Described substrate is ito glass, silicon chip and simple glass.
The present invention compares the useful effect that has with background technology:
1, the method with zinc doping prepares the PST film, zinc doping replaces titanium and forms electronegative defective, balance the positively charged intrinsic oxygen vacancy defect of PST material, thereby increased substantially the dielectric-constant adjustable (doping PST film adjustability＞40%, unadulterated PST film has only 20%) of thin-film material;
2, cooperate with the sol-gel method be rapidly heated, the thermal treatment process of controlled chilling prepares Zn doped PST film, the method for sol-gel helps accurate proportioning chemical element, and helps reducing sintering temperature.Be rapidly heated, the thermal treatment process of controlled chilling can remove the organism in the material rapidly, kept the activity that forms the various atoms of PST film, helps thin film crystallization.
Description of drawings
Fig. 1 is Zn doping PST film (Pb
0.4Sr
0.6TiZn
xO
3+x) the XRD diffractogram, conductive phase ITO is represented at the ITO peak in the curve, other peak is the XRD diffraction peak of PST uhligite phase;
Fig. 2 is Zn doping PST film (Pb
0.4Sr
0.6TiZn
xO
3+x) SEM figure;
Fig. 3 is the Zn doped PST film (Pb that test obtains under the 100KHz frequency condition
0.4Sr
0.6TiZn
xO
3+x) specific inductivity (electric capacity) and corresponding loss with the variation diagram of applying bias, i.e. adjustability.
Embodiment
Embodiment 1:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 4, add plumbic acetate, zinc acetate again after being heated to 40 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.20mol/L, 0.30mol/L and 0.005mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 1.0mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.14mol/L, 0.21mol/L, 0.3465mol/L and 0.0035mol/L.It is stand-by to leave standstill 48h.2.5cm the ito glass substrate of * 4.5cm is with the NaOH solution of 0.4mol/L ultra-sonic oscillation 15min at room temperature, deionized water rinsing, and ultra-sonic oscillation 15min in the alcohol obtains the ito glass substrate of clean surface.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, the method that vertically lifts with 2cm/min on the cleaning ito glass substrate obtains the film of coating colloidal sol, natural air drying, the stove thermal treatment 1h that directly puts into 600 ℃ cools to 200 ℃ of taking-ups with the furnace, repeat membrane, heat treatment process 8 times, obtain being coated in the 1%Zn doped P ST film on the ito glass substrate.The XRD curve of Zn doped PST film is seen the 1%Zn_PST of Fig. 1, and as seen from Figure 1, the Zn doped PST film that this experiment condition generates down is single uhligite phase.Its pattern is seen accompanying drawing 2 (b), as seen from the figure, the Zn doped PST film compact structure that this test conditions generates down, highly even, flawless.Fig. 3 (b) is seen in the variation of its capacitance voltage, and as seen from the figure, the Zn doped PST film adjustability that this experiment condition generates down reaches 39%, compares unadulterated PST film (19%, shown in Fig. 3 (a)) and is doubled.
Embodiment 2:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 5, add plumbic acetate, zinc acetate again after being heated to 50 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.28mol/L, 0.42mol/L and 0.014mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 1.4mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.14mol/L, 0.21mol/L, 0.343mol/L and 0.007mol/L.It is stand-by to leave standstill 48h.2.5cm the ito glass substrate of * 4.5cm is with the NaOH solution of 0.4mol/L ultra-sonic oscillation 15min at room temperature, deionized water rinsing, and ultra-sonic oscillation 15min in the alcohol obtains the ito substrate of clean surface.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, the method that vertically lifts with 4cm/min on the cleaning ito glass substrate obtains the film of coating colloidal sol, natural air drying, the stove thermal treatment 1h that directly puts into 600 ℃ cools to 200 ℃ of taking-ups with the furnace, repeat membrane, heat treatment process 8 times, obtain being coated in the 2%Zn doped P ST film on the ito glass substrate.The XRD curve of Zn doped PST film is seen the 2%Zn_PST of Fig. 1, and as seen from Figure 1, the Zn doped PST film that this experiment condition generates down is single uhligite phase.Its pattern is seen accompanying drawing 2 (c), as seen from the figure, the Zn doped PST film compact structure that this test conditions generates down, highly even, flawless.Fig. 3 (c) is seen in the variation of its capacitance voltage, and as seen from the figure, the Zn doped PST film adjustability that this experiment condition generates down reaches 53.5%, is 2.8 times of unadulterated PST film (19%, shown in Fig. 3 (a)).
Embodiment 3:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 5, add plumbic acetate, zinc acetate again after being heated to 50 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.56mol/L, 0.84mol/L and 0.056mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 1.4mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.14mol/L, 0.21mol/L, 0.336mol/L and 0.014mol/L.It is stand-by to leave standstill 48h.2.5cm the ito glass substrate of * 4.5cm is with the NaOH solution of 0.4mol/L ultra-sonic oscillation 15min at room temperature, deionized water rinsing, and ultra-sonic oscillation 15min in the alcohol obtains the ito glass substrate of clean surface.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, the method that vertically lifts with 6cm/min on the cleaning ito glass substrate obtains the film of coating colloidal sol, natural air drying, the stove thermal treatment 1h that directly puts into 600 ℃ cools to 200 ℃ of taking-ups with the furnace, repeat membrane, heat treatment process 8 times, obtain being coated in the 4%Zn doped P ST film on the ITO conducting glass substrate.The XRD curve of Zn doped PST film is seen the 4%Zn_PST of Fig. 1, and as seen from Figure 1, the Zn doped PST film that this experiment condition generates down is single uhligite phase.Its pattern is seen accompanying drawing 2 (d), as seen from the figure, the Zn doped PST film compact structure that this test conditions generates down, highly even, flawless.Fig. 3 (d) is seen in the variation of its capacitance voltage, and as seen from the figure, the Zn doped PST film adjustability that records under this experiment condition reaches 41.7%, compares unadulterated PST film (19%, shown in Fig. 3 (a)) and is doubled many.
Embodiment 4:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 8, add plumbic acetate, zinc acetate again after being heated to 80 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.56mol/L, 0.84mol/L and 0.084mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 1.6mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.14mol/L, 0.21mol/L, 0.329mol/L and 0.021mol/L.It is stand-by to leave standstill 48h.2.5cm the common glass substrates of * 4.5cm is with the NaOH solution of 0.4mol/L ultra-sonic oscillation 15min at room temperature, deionized water rinsing, and ultra-sonic oscillation 15min in the alcohol obtains the common glass substrates of clean surface.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, the method that vertically lifts with 4cm/min on the cleaning common glass substrates obtains the film of coating colloidal sol, natural air drying, the stove thermal treatment 30min that directly puts into 600 ℃ cools to 200 ℃ of taking-ups with the furnace, repeat membrane, heat treatment process 8 times, obtain being coated in the 6%Zn doped P ST film on the common glass substrates.At upper surface plating fourchette electrode, record the Zn doped PST film adjustability that generates under this experiment condition and reach 29%, compare unadulterated PST film (19%) and improved 50%.
Embodiment 5:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 10, add plumbic acetate, zinc acetate again after being heated to 80 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.56mol/L, 0.84mol/L and 0.084mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 2.0mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.28mol/L, 0.42mol/L, 0.658mol/L and 0.042mol/L.It is stand-by to leave standstill 48h.2.5cm the silicon substrate of * 2.5cm immerses 80 ℃ H
2O
2: ammoniacal liquor: the mixing solutions of deionized water (ratio is 1: 1: 6) insulation 15min, take out the back deionized water rinsing; Use 10% hydrofluoric acid dips 30s again, deionized water rinsing; Immerse 80 ℃ H
2O
2: HCl: the mixing solutions of deionized water (ratio is 1: 1: 6) insulation 15min, take out the back and use deionized water rinsing, obtain the silicon substrate of clean surface.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, spin-coating film on the clean silicon substrate (300r/min), natural air drying, directly put into 550 ℃ stove thermal treatment 1h, the speed of 50 ℃/h is cooled to 60 ℃ of taking-ups, repeat spin-coating film, heat treatment process 2 times, obtain being coated in the 6%Zn doped P ST film on the silicon substrate.The Zn doped PST film adjustability that records under this experiment condition reaches 24%.
Embodiment 6:
Strontium carbonate powder is dissolved in the aqueous solution of acetic acid, water acid is than being 1: 10, add plumbic acetate, zinc acetate again after being heated to 80 ℃ of stirring and dissolving, the concentration of control Pb-Sr-Zn is 0.2mol/L, 0.3mol/L and 0.06mol/L, butyl (tetra) titanate is dissolved in ethylene glycol monomethyl ether, stir, its concentration is: 2.0mol/L.Two kinds of solution mix then, add an amount of acetic acid and continue to stir 15min, obtain Pb-Sr-Ti-Zn precursor colloidal sol, and the volumetric molar concentration of four kinds of components is respectively: 0.14mol/L, 0.21mol/L, 0.308mol/L and 0.042mol/L.It is stand-by to leave standstill 48h.2.5cm the silicon substrate of * 2.5cm is handled with example 5 described cleaning methods.Utilize the above colloidal sol of the above-mentioned 48h of leaving standstill, spin-coating film on the clean silicon substrate (300r/min), natural air drying, directly put into 550 ℃ stove thermal treatment 1h, the speed of 50 ℃/h is cooled to 60 ℃ of taking-ups, repeat spin-coating film, heat treatment process 4 times, obtain being coated in the 12%Zn doped P ST film on the silicon substrate.The Zn doped PST film adjustability that records under this experiment condition reaches 7.5%.
Claims (4)
1, a kind of Zn doped PST film of dielectric-constant adjustable is characterized in that:
It is to mix Pb with Zn as impurity
0.4Sr
0.6TiO
3The thin-film material of matrix, expression formula is:
Pb
0.4Sr
0.6Ti
1-xZn
xO
3+x, wherein the molar content of Zn is 1%～12%, i.e. 1%≤x≤12%.
2, the Zn doped PST film of a kind of dielectric-constant adjustable according to claim 1, it is characterized in that: film is perovskite structure, and Zn mixes the position of Ti in the perovskite structure.
3, a kind of preparation method of Zn doped PST film of dielectric-constant adjustable is characterized in that the step of this method is as follows:
1) strontium titanate, plumbic acetate, zinc acetate dissolve in acetic acid, add entry, the volume ratio of water and acetic acid is 1: 10～1: 4, plumbous concentration is 0.2mol/L～0.56mol/L, the concentration of strontium is 0.3mol/L～0.84mol/L, and zinc concentration is 0.005mol/L～0.084mol/L, and Heating temperature is 40～80 ℃, stirring makes its whole dissolvings, obtains the solution first;
2) butyl (tetra) titanate dissolves in ethylene glycol monomethyl ether, and controlling concn is 1mol/L～2mol/L, stirs, and obtains solution second;
3) two kinds of solution of first, second mix, stir, naturally cooling, adding acetic acid is controlled wherein, and Pb, Sr, four kinds of component concentrations of Ti, Zn are respectively: Pb:0.14mol/L～0.28mol/L, Sr:0.21mol/L～0.42mol/L, Ti:0.336mol/L～0.672mol/L, Zn:0.0035mol/L～0.042mol/L obtains precursor colloidal sol;
4) the precursor colloidal sol that utilizes step 3) to prepare adopts dipping method of pulling up plated film on substrate, immerses speed control at 2cm/min～6cm/min, stops 10～15sec, lifts substrate with identical speed again and goes out colloidal sol, and natural air drying obtains dry film; Perhaps adopt method plated film on substrate of spin coating whirl coating, spin speed is controlled at 300r/min～900r/min, keeps stopping behind the rotation 1min, and natural air drying obtains dry film;
5) dry film that step 4) is obtained is directly handled 10min～60min 550 ℃～600 ℃ stove interior heat, and controlled chilling speed obtains forming the film of complete uhligite crystalline phase in 50 ℃/h;
6) repeating step 4) and step 5) 2～8 times, Zn doped P ST film obtained.
4, the Zn doped PST film of a kind of dielectric-constant adjustable according to claim 3 is characterized in that: described substrate is ito glass, silicon chip and simple glass.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102176355A (en) * | 2011-01-22 | 2011-09-07 | 浙江大学 | Nano Ag particle-(Pb0.4Sr0.6)TiO3 solid solution seepage-type composite ceramic film and preparation method thereof |
| CN103663558A (en) * | 2013-12-11 | 2014-03-26 | 上海师范大学 | Plumbum zinc niobium titanate (PZNT) chemical solution and ferroelectric film preparation method |
| CN111710527A (en) * | 2020-07-08 | 2020-09-25 | 中南大学 | Organic-inorganic nano composite dielectric and preparation method thereof |
| CN115739115A (en) * | 2022-11-25 | 2023-03-07 | 南京航空航天大学 | B-site double-ion doped strontium titanate nano composite photocatalytic material and preparation method thereof |
-
2006
- 2006-11-21 CN CNB2006101547251A patent/CN100572317C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102176355A (en) * | 2011-01-22 | 2011-09-07 | 浙江大学 | Nano Ag particle-(Pb0.4Sr0.6)TiO3 solid solution seepage-type composite ceramic film and preparation method thereof |
| CN102176355B (en) * | 2011-01-22 | 2013-05-22 | 浙江大学 | Nano Ag particle-(Pb0.4Sr0.6)TiO3 solid solution seepage-type composite ceramic film and preparation method thereof |
| CN103663558A (en) * | 2013-12-11 | 2014-03-26 | 上海师范大学 | Plumbum zinc niobium titanate (PZNT) chemical solution and ferroelectric film preparation method |
| CN111710527A (en) * | 2020-07-08 | 2020-09-25 | 中南大学 | Organic-inorganic nano composite dielectric and preparation method thereof |
| CN111710527B (en) * | 2020-07-08 | 2021-07-23 | 中南大学 | Organic-inorganic nano composite dielectric and preparation method thereof |
| CN115739115A (en) * | 2022-11-25 | 2023-03-07 | 南京航空航天大学 | B-site double-ion doped strontium titanate nano composite photocatalytic material and preparation method thereof |
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