CN1966397A - Gas phase self-assembled growth silicon quantum torus nano structure preparation method - Google Patents
Gas phase self-assembled growth silicon quantum torus nano structure preparation method Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 230000012010 growth Effects 0.000 title claims description 60
- 238000002360 preparation method Methods 0.000 title claims description 22
- 239000002086 nanomaterial Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000001257 hydrogen Substances 0.000 claims abstract description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 39
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 28
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 31
- 239000002063 nanoring Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 21
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000002096 quantum dot Substances 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 18
- 238000004377 microelectronic Methods 0.000 description 9
- 238000011160 research Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005284 basis set Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention relates to a method for preparing gas self-assemble silicon quantum annular nanometer structure, wherein it comprises that: in the plasma strengthen chemical gas deposit system (PECVD), on the substrate silicon surface, processing the pretreatment of argon plasma and hydrogen plasma, to form the corn center of silicon nanometer ring; the in PECVD system, periodically using hydrogen diluted silane gas (SiH4+H2) and hydrogen gas (H2) to grow and etch the silicon at corn center, to form the silicon quamtum annular nanometer structure; processing surface pretreatment on silicon substrate to form the corn center with nanometer annular structure, while its density is 1-3*108/cm2. And when grows and etches silicon, in each period, it uses hydrogen diluted silane to grow the corn center, and uses pure hydrogen gas to etch silicon, repeats the deposit and etch periods for 5-50 times.
Description
One, technical field:
The present invention relates to the preparation method of gas phase self-assembled growth silicon quantum torus nano structure, a kind of plasma enhanced CVD (PECVD) system from principle and the proposition of implementing process two aspects, utilize deposit growth and lithographic method to prepare the new technology of sequential 2 D silicon nano-rings structure.
Two, background technology:
The nano-electron of based semiconductor quantum structure and photoelectron are integrated to be the core of 21 century new generation of semiconductor device, also is the hardware foundation of modern information technologies.Semiconductor silicon (Si) is the most important material of current preparation microelectronic component, yet whether Si can continue to play an important role in the nanometer electronic device epoch, whether can realize the integrated and electromagnetism regulation and control of Si monolithic photoelectricity, this is the great research topic in present material science and the microelectronics field, also be the international research forward position of this subject, have important basic and applied research meaning.
In recent ten years experiment and theoretical research show that distinctive quantum size effect can be widely used in laser instrument, detector, memory device and the quantum logic device under the nanoscales that structure showed such as the nano dot of based semiconductor material, line.Recent years wherein, because the nano-rings structure is in the application prospect that is possessed aspect optical microcavity, the electromagnetism regulation and control, increasing research work is devoted to pursue new nano-rings structure technology of preparing.Warburton, Optical emission from a charge-tunable quantum ring.Nature 405 such as R.J., 926-929 (2000). (based on the Quantum Rings light emission of adjustable iunjected charge); Mano, Self-Assembly of Concentric Quantum Double Rings.Nano Lett.5 such as T., 425-428 (2006). (the concentric quantum twin nuclei of self assembly); Matos-Abiague etc. .Photoinduced Charge Currents inMesoscopic Rings.Phys.Rev.Lett.94,166801 (2005). (the photoinduction charge current in the nano-rings); .Quantum rings as electron spin beam splitters.Phys.Rev.B 73,155325 (2006) such as Foldi.P. (based on the electron spin beam separator spare of quanta ring structure).
Than the becket structure, the Nano semiconductor ring structure can show fairly obvious quantum size effect because it has bigger electronics coherence length.This is for the basic research of studying quantum coherence effect, or has crucial meaning as the implementation platform of electromagnetism quantum regulation and control and optical microcavity.Thereby in recent years, more and more theoretical research and experimental work have been attracted.
The main method of the disclosed acquisition semiconductor nano of prior art ring structure is to utilize molecular beam epitaxy (MBE) technology, and material is indium arsenide/GaAs or silicon/germanium mixed system.The growth of nano-rings structure has utilized lattice mismatch is induced between different materials surface atom to move and has realized.But, still be not reported with Si material preparation nano-rings structure.International review points out that if obtain practical application in device, the semiconductor nano ring structure is necessary so: 1) possess even more ideal shape characteristic, it is even and controlled to require to try one's best on critical sizes such as the height of ring wall and width; 2) on distributing, the locus has certain orderly controllability; 3) become the compatible mutually ability of technology with the microelectronics Si basis set of present main flow.In addition, from angle of practical application, MBE method operation more complicated, and also the equipment cost is particularly expensive.
A kind ofly can satisfy above device application requirement if can prepare, more easy to operate than MBE method again on the technology simultaneously, the equipment cost is more cheap, and becomes the compatible fully method of technology to prepare Si nano-rings material with microelectronics Si basis set, will have the meaning of important theoretical research and practical application.
Three, summary of the invention:
The present invention seeks to: the preparation method who proposes a kind of gas phase self-assembled growth silicon (Si) quantum torus nano structure, utilize the method for growth/etching in plasma enhanced CVD (PECVD) system, especially at Si superficial growth sequential 2 D Si nano-rings array structure.The object of the invention also is: propose a kind of can be by the control parameter, to the size and the method necessarily regulated and control of pattern of ring; Prepare and have significantly orderly ring array; The object of the invention also is to propose a kind of whole preparation process becomes the silicon quantum torus nano structure of process compatible with present microelectronics Si basis set preparation method.The object of the invention also is, utilize the PECVD system on preparation manipulation technology and cost all than the more convenient and cheap characteristics of molecule beam epitaxy (MBE), thereby obtain a kind ofly on technology, to become process compatible, again the preparation method of more convenient realization with the microelectronics Si basis set of current main flow.The Si nano-rings structure that is obtained can be quantum optoelectronic information technology crucial basis is provided.
Technical solution of the present invention is: utilize the gas phase self-assembled growth method to prepare silicon quantum torus nano structure, at first, in plasma reinforced chemical vapor deposition (PECVD) system the substrate silicon surface is carried out argon gas (Ar) plasma and hydrogen (H respectively
2) preliminary treatment of plasma, form the nuclearing centre of silicon nano-rings on the substrate silicon surface; Then, alternately use big hydrogen diluted silane gas (SiH at PECVD system Central Plains bit period
4+ H
2) and pure hydrogen (H
2) nuclearing centre is carried out the growth and the etching of silicon, form silicon quantum torus nano structure.To the surface of silicon preliminary treatment, form the nuclearing centre of nano-rings structure, its density must be controlled at 1～3 * 10
8/ cm
2, for the growth of ring structure later on provides condition; Periodically being used alternatingly the method that big hydrogen diluted silane gas and hydrogen carries out silicon growth and etching is: in the middle of each cycle, use big hydrogen diluted silane to carry out the growth of silicon at nuclearing centre, carry out the etching of silicon then with pure hydrogen.Repeat an above-mentioned growth and an etching 5-50 cycle.Under specific technological parameter condition, obtain the growth that a suitable parameter window is realized silicon nano-rings structure.
The present invention comes density, size, ring wall height and the width of control loop by control reaction chamber pressure or gas flow, underlayer temperature, deposition time and periodicity.Width that generally can control loop is about 18nm, diameter 150～500nm.
Utilize argon gas (Ar) plasma that silicon face is carried out pretreated actual conditions to be: reaction chamber pressure: 30-50Pa, processing time: 280-400 second, apply the power density of plasma: 1.0 ± 0.3W/cm
2Secondly, among the PECVD system, utilize hydrogen (H
2) plasma handles silicon face, reaction chamber pressure: 70-90Pa, processing time: 100-160 second, apply the power density of plasma: 1.3 ± 0.2W/cm
2Utilize the surface passivation effect of hydrogen, the density of control surface nuclearing centre is controlled at 1～3 * 10
8/ cm
2Underlayer temperature in the above surface treatment process is controlled to be: 200 ± 5 ℃.
In the middle of deposition process, utilize SiH
4+ H
2By aura SiH that decomposition reaction generates
3Presoma is deposited on the substrate.Actual conditions when using big hydrogen diluted silane gas deposit is: SiH
4Flow is 1-2sccm, H
2Flow is 130-170sccm, reaction chamber pressure: 80-100Pa; When using hydrogen gas plasma to carry out etching: H
2Flow is 130-170sccm, reaction chamber pressure: 80-100Pa.Underlayer temperature is in the middle of whole periodicity alternating deposition and the etching process: 200 ± 5 ℃, the power density that applies plasma is: 1.3 ± 0.2W/cm
2
The theoretical foundation of growth mechanism of the present invention: utilizing the method for PECVD system growth amorphous silicon membrane or self-assembled growth Si quantum-dot structure is the method for a kind of broad research and use, but concrete growth control parameter is very important to its growth pattern.The present invention has introduced the mechanism such as etching of competing with growth phase in the PECVD system after, search out the balance parameters condition of suitable etching and growth, can obtain the abundant free degree aspect the pattern of controlling final structure and distribution density, this provides a strong basis for realizing Si nano-rings structure.
The present invention searches out " the growth control parameter window " of a growth Si nano-rings structure mainly by the time series and the relative intensity of growth and etching process in the control growth/lithographic method.It mainly is to be between two kinds of parameter states, the one, conventional self-assembled growth Si quantum dot (nc-Si) structure or because corrasion is crossed strong without any the parameter condition of deposit effect, the 2nd, owing to the more weak situation that forms surface filming of the corrasion of hydrogen.The present invention obtains comparatively desirable initial Si point nucleation density by surface treatment.In initial big hydrogen diluted silane deposition process, form island quantum-dot structure with orderly distribution.Utilize the corrasion of hydrogen then, induce from putting to the transformation that encircles.Pass through the corrasion and the silane (SiH of equilibrium hydrogen again
4) the growth illuviation, make ring cross growth under the competition of etching and growth drives enlarge, to obtain needed yardstick and pattern characteristic.
At etching that two keys are arranged in the middle of the growth course and growth mechanism: at first be that hydrogen plasma at first began etching to Si nuclear centre, causes the transformation from the island structure to the circulus under the stress distribution that forms in Si nucleus growth process was induced 1); 2) secondly, under the strong corrasion of hydrogen plasma, the ring outer wall spreads growth presoma (precursor, the SiH of coming owing to receiving by bigger substrate surface
3Or SiH
2), thereby can restrain and offset the corrasion of hydrogen, thus can be to outgrowth; Yet internal ring wall amasss the presoma of being supplied with owing to can only accept less inner ring surface, so the presoma of supplying with far is not enough to offset the effect of hydrogen etching, so constantly be etched.Thus, caused external annulus constantly to be grown, and the situation that internal ring wall constantly is etched.Its clean effect is that whole ring structure is constantly to outgrowth.
The preparation method of the gas phase self-assembled growth silicon quantum torus nano structure that the present invention proposes utilizes the method for growth/etching in plasma enhanced CVD (PECVD) system, especially at Si superficial growth sequential 2 D Si nano-rings array structure.The Si ring structure 1 that this method obtained) have very good shape characteristic, highly at 3～10nm, wide 18nm, diameter 150～500nm.In addition, because its unique growth mechanism process can be carried out certain regulation and control to size and the pattern that encircles easily by the control parameter; 2) can obtain to possess on the position distribution ring array of obvious order; 3) whole preparation process becomes process compatible with present microelectronics Si basis set.Compatible fully by this technology and modern lsi technology, the Si nano-rings structure that is obtained can be quantum optoelectronic information technology crucial basis is provided.Because the PECVD system is all more convenient and cheap than MBE on preparation manipulation technology and cost, thereby we can obtain a kind ofly to become process compatible with the microelectronics Si basis set of main flow now on technology, again the preparation method of more convenient realization.
Characteristics of the present invention are: utilize the PECVD system and the method for growth/etching successively, the nanometer Si nano-rings structure prepared at silicon face has following outstanding feature:
1) at first, it is the unbroken loop structure on a kind of complete meaning, has very good shape characteristic: highly controlled at 3～10nm, and wide 18nm, diameter 250～500nm.Also have perfect rotational symmetry (rotationalsymmetry) simultaneously, this is for having very important significance at tool aspect the photoelectricity quantum regulation and control.
2) secondly, have the position distribution of desirable sequential 2 D, this is crucial for the collective's cooperative effect that uses ring.
3) owing to its unique growth mechanism, the size of ring and distribution can be with effectively regulating and control the control of growth parameter(s).As by adjusting the surface-treated time, density and order that can control loop; By the periodicity of simple change growth, we are the size of control loop effectively just; By changing the balance parameters of hydrogen etching and silane growth in each cycle, pattern characteristic that can control loop comprises key parameters such as the height of ring wall and width.
4) preparation of Si nano-rings structure all becomes process compatible with microelectronics Si basis set on material and technology.
Simultaneously, principle of the present invention also can be promoted the preparation that is used for other semi-conducting material nano-rings structure.
Four, description of drawings:
Fig. 1 is a process flow diagram of the present invention;
Fig. 2 is the sequential chart of reaction gas flow of the present invention.
Among Fig. 3: Fig. 3 (a) is plane AFM (Atomic ForceMicroscopy, AFM) photo of Si nano-rings array structure.Therefrom can be clear that the complete rule that the Si nano-rings possessed, ring-type pattern with high rotational symmetry, and the sequential 2 D characteristic of ring array.For the ring of grow " maturation ", its position is orderly and dimensional homogeneity is particularly evident.Fig. 3 (b) is the part section AFM picture of Si nano-rings array.The picture on the right is selected AFM scanning area, and wherein black line is depicted as the section index line.The profile image of the left side for being obtained by right figure midship section index line.Can be clear that three Si nano-rings of all this structure all has very regular ringwall structure.Ring with double-head arrow indication in scheming is an example, and Qi Bigao is about 12 nanometers, and the diameter of ring is 450 nanometers, is on the complete meaning, defines good ring structure.
Fig. 4 is SEM (Scanning Electron Microscopy, the SEM) photo of Si nano-rings structure.Because the lateral dimension of Si nano-rings can be exaggerative by the needle point transversal effect of AFM in AFM, so our selection has the developed width of the SEM technology for detection ring wall of better lateral dimension characteristic.As shown in the figure, actual ring wall has only 18nm, is a very good structure.
Five, the specific embodiment:
According to Fig. 1,2; The first step: the preliminary treatment of surface of silicon:
The parameter of using argon gas and hydrogen gas plasma to carry out surface preparation:
At first, among plasma reinforced chemical vapor deposition (PECVD) system, at first use argon plasma
The surface is handled, and its concrete process conditions are as follows:
Power source frequency: 13.56MHz, power density: 1W/cm
2
Reaction chamber pressure: 45Pa, underlayer temperature: 200 ℃
Processing time: about 300 seconds
Secondly, use hydrogen gas plasma that the surface is handled among plasma reinforced chemical vapor deposition (PECVD) system, its concrete process conditions are as follows:
Power source frequency: 13.56MHz, power density: 1.33W/cm
2
Reaction chamber pressure: 80Pa, underlayer temperature: 200 ℃
Processing time: 130 seconds
Second step: periodic grows one by one/the method method growth Si nano-rings structure of etching:
Through after the above processing, the silane gas deposit silicon and the hydrogen gas plasma etching of on silicon substrate, diluting, totally 10 cycles so for the big hydrogen of use.
In the middle of each cycle, the concrete process conditions in big hydrogen dilution atmosphere during deposit silicon are as follows:
Power source frequency: 13.56MHz, power density: 1.33W/cm
2
Reaction chamber pressure: 90Pa, underlayer temperature: 200 ℃
Deposition time: 120 seconds
In the middle of deposition process, by SiH
4+ H
2Generate SiH by the aura decomposition reaction
3Presoma is deposited on the substrate.Utilize hydrogen as carrier, conditioned reaction chamber pressure and aura situation.SiH wherein
4Flow is 2sccm, and the hydrogen flow is 150sccm (sccm, a per minute standard cubic centimeter).The chamber of different size or the difference of vacuum equipment can be controlled different flows.Deposition rate is 0.03nm/s.
Next, the concrete process conditions that the use hydrogen gas plasma carries out etching processing are as follows:
Power source is selected common frequency: 13.56MHz, power density: 1.33W/cm for use
2
Reaction chamber pressure: 85Pa, underlayer temperature: 200 ℃
Processing time: 80Second
In the middle of etching process, by pure H
2As etching gas, utilize the corrasion of H plasma that optionally etching is carried out in the growth of last time.H wherein
2Flow remains 150sccm.Etch rate is 0.04nm/s.N among Fig. 1,2: alternating growth periodicity;
t
1: the Ar plasma surface treatment time;
t
2: H
2The plasma surface treatment time;
T
1: the silane plasma deposition time in each cycle;
T
2: hydrogen plasma etch period in each cycle.
Claims (5)
1, the preparation method of gas phase self-assembled growth silicon quantum torus nano structure is characterized in that at first the substrate silicon surface is carried out argon gas (Ar) plasma and hydrogen (H respectively in plasma reinforced chemical vapor deposition (PECVD) system
2) preliminary treatment of plasma, form the nuclearing centre of silicon nano-rings on the substrate silicon surface; Then, alternately use big hydrogen diluted silane gas (SiH at PECVD system Central Plains bit period
4+ H
2) and pure hydrogen (H
2) nuclearing centre is carried out the growth and the etching of silicon, form silicon quantum torus nano structure.To the surface of silicon preliminary treatment, form the nuclearing centre of nano-rings structure, its density must be controlled at 1～3 * 10
8/ cm
2, for the growth of ring structure later on provides condition; Periodically being used alternatingly the method that big hydrogen diluted silane gas and hydrogen carries out silicon growth and etching is: in the middle of each cycle, use big hydrogen diluted silane to grow at nuclearing centre, carry out the etching of silicon then with pure hydrogen.Repeat an above-mentioned deposit and an etching 5-50 cycle.Under specific technological parameter condition, obtain a suitable growth control parameter window to realize the growth of silicon nano-rings structure.
2, the preparation method of gas phase self-assembled growth silicon quantum torus nano structure according to claim 1, it is characterized in that in the growth course of silicon nano-rings structure, utilizing the stress distribution that forms in the Si nucleus growth process as inducing, make corrasion at first begin etching, realize the transformation from the island structure to the circulus from the centre of preliminary island quantum dot; And by the growth and the time series and the relative intensity of etching process in the control growth/lithographic method, utilize the difference growth etching equilibrium condition of ring inside and outside wall, realize continuous growth of external annulus and ring that internal ring wall constantly is etched to outgrowth.
3, the preparation method of gas phase self-assembled growth silicon quantum torus nano structure according to claim 1 is characterized in that controlling density, size, ring wall thickness and height that reaction chamber pressure or gas flow, underlayer temperature, deposition time and periodicity come control loop.
4, the preparation method of gas phase self-assembled growth silicon quantum torus nano structure according to claim 1 is characterized in that in plasma reinforced chemical vapor deposition (PECVD) system, at first utilizes argon gas (Ar) plasma that silicon face is carried out preliminary treatment.Its condition is: reaction chamber pressure: 30-50Pa, processing time: 280-400 second, apply the power density of plasma: 1.0 ± 0.3W/cm
2Secondly, among the PECVD system, utilize hydrogen (H
2) plasma handles silicon face, reaction chamber pressure: 70-90Pa, processing time: 100-160 second, apply the power density of plasma: 1.3 ± 0.2W/cm
2Utilize the surface passivation effect of hydrogen, the density of control surface nuclearing centre is controlled at 1-3 * 10
8/ cm
2Underlayer temperature in the above surface treatment process is controlled to be: 200 ± 5 ℃.
5, the preparation method of gas phase self-assembled growth silicon quantum torus nano structure according to claim 1 is characterized in that utilizing SiH in the middle of deposition process
4+ H
2By aura SiH that decomposition reaction generates
3Presoma is deposited on the substrate.SiH when using big hydrogen diluted silane gas deposit
4Flow is 1-2sccm, and the hydrogen flow is 130-170sccm, reaction chamber pressure: 80-100Pa; When using hydrogen gas plasma to carry out etching: the hydrogen flow is 130-170sccm, reaction chamber pressure: 80-100Pa.Underlayer temperature is in the middle of whole periodicity alternating deposition and the etching process: 200 ± 5 ℃, the power density that applies plasma is: 1.3 ± 0.2W/cm
2
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567521B (en) * | 2008-04-23 | 2011-02-02 | 中国科学院半导体研究所 | Method for growing controllable quantum dots and quantum rings |
| CN102097296A (en) * | 2010-10-09 | 2011-06-15 | 北京大学 | Preparation method of semiconductor nano circular ring |
| CN112391612A (en) * | 2019-08-19 | 2021-02-23 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US11887854B2 (en) | 2021-01-14 | 2024-01-30 | Changxin Memory Technologies, Inc. | Semiconductor structure manufacturing method and two semiconductor structures |
-
2006
- 2006-11-23 CN CNB2006100979559A patent/CN100554140C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567521B (en) * | 2008-04-23 | 2011-02-02 | 中国科学院半导体研究所 | Method for growing controllable quantum dots and quantum rings |
| CN102097296A (en) * | 2010-10-09 | 2011-06-15 | 北京大学 | Preparation method of semiconductor nano circular ring |
| US8722312B2 (en) | 2010-10-09 | 2014-05-13 | Peking University | Method for fabricating semiconductor nano circular ring |
| CN112391612A (en) * | 2019-08-19 | 2021-02-23 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| US11887854B2 (en) | 2021-01-14 | 2024-01-30 | Changxin Memory Technologies, Inc. | Semiconductor structure manufacturing method and two semiconductor structures |
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|---|---|
| CN100554140C (en) | 2009-10-28 |
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