CN1958236B - 一种化学机械抛光中研磨垫沟槽加工方法 - Google Patents
一种化学机械抛光中研磨垫沟槽加工方法 Download PDFInfo
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- CN1958236B CN1958236B CN2005101100065A CN200510110006A CN1958236B CN 1958236 B CN1958236 B CN 1958236B CN 2005101100065 A CN2005101100065 A CN 2005101100065A CN 200510110006 A CN200510110006 A CN 200510110006A CN 1958236 B CN1958236 B CN 1958236B
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- Prior art keywords
- grinding pad
- depth
- groove
- mechanical polishing
- mean value
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2005101100065A CN1958236B (zh) | 2005-11-03 | 2005-11-03 | 一种化学机械抛光中研磨垫沟槽加工方法 |
Applications Claiming Priority (1)
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CN2005101100065A CN1958236B (zh) | 2005-11-03 | 2005-11-03 | 一种化学机械抛光中研磨垫沟槽加工方法 |
Publications (2)
Publication Number | Publication Date |
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CN1958236A CN1958236A (zh) | 2007-05-09 |
CN1958236B true CN1958236B (zh) | 2010-08-11 |
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CN2005101100065A Expired - Fee Related CN1958236B (zh) | 2005-11-03 | 2005-11-03 | 一种化学机械抛光中研磨垫沟槽加工方法 |
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CN (1) | CN1958236B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102554784A (zh) * | 2012-02-10 | 2012-07-11 | 上海宏力半导体制造有限公司 | 制造细研磨垫的方法以及化学机械研磨方法 |
CN103372807B (zh) * | 2012-04-19 | 2016-03-02 | 无锡华润上华科技有限公司 | Cmp研磨方法 |
CN107953259B (zh) * | 2017-12-01 | 2019-09-27 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 抛光垫修整方法及包含其的化学机械抛光方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093651A (en) * | 1997-12-23 | 2000-07-25 | Intel Corporation | Polish pad with non-uniform groove depth to improve wafer polish rate uniformity |
US6120366A (en) * | 1998-12-29 | 2000-09-19 | United Microelectronics Corp. | Chemical-mechanical polishing pad |
CN1543669A (zh) * | 2001-08-16 | 2004-11-03 | ��ʽ����Skc | 具有孔和/或槽的化学机械抛光垫 |
-
2005
- 2005-11-03 CN CN2005101100065A patent/CN1958236B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093651A (en) * | 1997-12-23 | 2000-07-25 | Intel Corporation | Polish pad with non-uniform groove depth to improve wafer polish rate uniformity |
US6120366A (en) * | 1998-12-29 | 2000-09-19 | United Microelectronics Corp. | Chemical-mechanical polishing pad |
CN1543669A (zh) * | 2001-08-16 | 2004-11-03 | ��ʽ����Skc | 具有孔和/或槽的化学机械抛光垫 |
Non-Patent Citations (3)
Title |
---|
JP特开2005-177934A 2005.07.07 |
JP特开2005-183711A 2005.07.07 |
JP特开2005-294410A 2005.10.20 |
Also Published As
Publication number | Publication date |
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CN1958236A (zh) | 2007-05-09 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206 Shanghai Road, Bridge No. 1188, 718 Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100811 Termination date: 20181103 |
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CF01 | Termination of patent right due to non-payment of annual fee |