CN1956135A - Spacer and electron emission display device having the spacer - Google Patents

Spacer and electron emission display device having the spacer Download PDF

Info

Publication number
CN1956135A
CN1956135A CNA2006101507273A CN200610150727A CN1956135A CN 1956135 A CN1956135 A CN 1956135A CN A2006101507273 A CNA2006101507273 A CN A2006101507273A CN 200610150727 A CN200610150727 A CN 200610150727A CN 1956135 A CN1956135 A CN 1956135A
Authority
CN
China
Prior art keywords
layer
electron emission
caldding layer
thickness
main body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2006101507273A
Other languages
Chinese (zh)
Other versions
CN100570799C (en
Inventor
陈成焕
张喆铉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of CN1956135A publication Critical patent/CN1956135A/en
Application granted granted Critical
Publication of CN100570799C publication Critical patent/CN100570799C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/863—Spacing members characterised by the form or structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/864—Spacing members characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/8645—Spacing members with coatings on the lateral surfaces thereof

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)

Abstract

A spacer which can effectively discharge secondary electrons and an electron emission display having the spacer include: a main body disposed between first and second substrates which have first and second electrode layers, respectively; and a coating layer formed on a side surface of the main body. The coating layer has a first portion contacting one of the first and second electrode layers and a second portion formed on a central portion of the side surface of the main body. A thickness of the first portion is greater than that of the second portion.

Description

A kind of escapement and electron emission display device with escapement
Technical field
The present invention relates to a kind of escapement between two substrates and come between substrate, to keep certain interval, the invention still further relates to a kind of electron emission display device with this escapement to form a vacuum packet.
Background technology
Normally, the electron emission device that is arranged on the electron-emitting device is divided into the device and the device that use cold cathode as electron emission source of use hot cathode as electron emission source.
The cold cathode electron emitter spare that several types is arranged, comprise: field emitter array (FEA, FieldEmitter Array) device, surface conductive reflector (SCE, Surface Conduction Emitter) device, metal-insulator-metal type (MIM, Metal-Insulator-Metal) device and metal-insulator semiconductor (MIS, Metal-Insulator-Semiconductor) device.
The MIM device comprises the first metal layer and second metal level and the insulating barrier between this first metal layer and second metal level.The MIS device comprises metal level and semiconductor layer and the insulating barrier between this metal level and semiconductor layer.In the MIM device, when certain voltage was applied in the first metal layer and second metal level, according to the channel effect phenomenon, the electronics that produces from this first metal layer arrived this second metal level by this insulating barrier.In the electronics that arrives this second metal level, the electronics that some energy are higher than this second metal level work content is launched out from this second metal level.In this MIS device, when certain voltage was applied in its metal level and semiconductor layer, according to the channel effect phenomenon, the electronics that produces from this semiconductor layer arrived this metal level by this insulating barrier.In the electronics that arrives this metal level, the electronics that some energy are higher than this metal level work content is launched out from this metal level.
The SCE device comprises first electrode and second electrode and the conducting shell of facing mutually between this first electrode and second electrode.Minute crack is arranged in this conducting shell to form electron-emitting area.When certain voltage is applied to this first electrode and second electrode when allowing electric current along the Surface runoff of this conducting shell, electronics is launched out from this electron-emitting area.
The principle of this FEA devices use is: when the material with relatively low work content or relatively large aspect ratio is used as electron source, electronics is launched effectively by electric field under vacuum environment.At present, electron-emitting area is made of the material with relatively low work content or relatively large aspect ratio, such as: molybdenum base material, silica-base material and carbon-based material such as carbon nano-tube, graphite and class are bored carbon, like this, when electric field was applied in such material under vacuum environment, electronics can effectively be launched.When electron-emitting area was made of molybdenum base material or silica-base material, these electron-emitting areas were made the pointed tip electrode structure.
Electron emission device is arranged on the substrate to form electron-emitting device.This electron-emitting device combines so that a kind of electron emission display device to be provided with another substrate that is provided with Optical Transmit Unit, and this Optical Transmit Unit comprises fluorescence coating and positive electrode.
This electron-emitting device comprises electron-emitting area and a large amount of drive electrode as scanning and data electrode.By operation, the on/off operation and the electron emission amount of each pixel are controlled electron-emitting area and drive electrode.This electron emission display device uses the electron excitation fluorescence coating of launching from electron-emitting area to show predetermined picture.
In addition, also have a large amount of escapements to be set in the vacuum packet to prevent that substrate from being damaged or smashing by the inside and outside pressure reduction of this vacuum packet.
These escapements are exposed on the inner space of this vacuum packet, and the electronics that penetrates from electronic emitter moves in this vacuum packet.So this escapement is charged by positive electricity or negative electricity ground by electronics and its collision.This escapement that is recharged may or repel electronics and twist the electron waves beam path owing to attraction, thereby reduces the colour reproduction of electron emission display device and the quality of brightness.
In order to prevent the change of electron waves beam path, but this escapement can be capped a kind of insulating material or connection electrode to be released in the electric charge that accumulates on this escapement to the outside.Yet, because this tectal thickness is less than 1 μ m, so its effective contact electrode.
Summary of the invention
The invention provides a kind of escapement, its electrical conductivity efficient of tectal thickness that is formed at this escapement side by change is improved to greatest extent, and the present invention also provides a kind of electron emission display device with this escapement.
In embodiments of the present invention, a kind of escapement comprises: main body is used for first substrate and second substrate that have first electrode layer and the second electrode lay respectively spaced apart; Cover layer is formed at the side of this main body; Wherein, this cover layer has the first of one of contact first electrode layer and the second electrode lay and the second portion of the core of the side that is formed at this main body, and the thickness of this first is greater than the thickness of this second portion.
This cover layer can comprise the lower caldding layer of the upper caldding layer that contacts the second electrode lay, contact first electrode layer and the central core that upper caldding layer and lower caldding layer are connected as a single entity; Wherein, this upper caldding layer increases to an end of described main body from the part that is connected in central overlay gradually with one thickness in the lower caldding layer at least.
In another embodiment of the present invention, a kind of electron emission display device comprises: first substrate and second substrate, face mutually to form vacuum packet; Electron emission unit is arranged on this first substrate; Optical Transmit Unit is arranged on second substrate; Escapement is arranged between this first substrate and second substrate; This escapement comprises: main body is arranged between first substrate and second substrate that has first electrode layer and the second electrode lay respectively; Cover layer is formed at the side of this main body; Wherein, this cover layer has the first of one of contact first electrode layer and the second electrode lay and the second portion of the core of the side that is formed at this main body, and the thickness of this first is greater than the thickness of this second portion.
This cover layer can comprise: a upper caldding layer that is used to contact described Optical Transmit Unit, a lower caldding layer that is used to contact electron emission unit, and the central core that upper caldding layer and lower caldding layer are connected as a single entity; At least this upper caldding layer increases to an end of described main body from the part that is connected with central overlay gradually with one thickness in the lower caldding layer.
The thickness of described main body can be uniformly, and one varied in thickness in described at least upper caldding layer and the lower caldding layer.
At least one thickness increment rate in described upper caldding layer and the lower caldding layer can be constant.
Perhaps, one thickness increment rate in described at least upper caldding layer and the lower caldding layer can be rising.
Perhaps, main body can have corresponding at least one first in described upper caldding layer and the lower caldding layer; And the thickness of the first of this main body can reduce gradually to the other end of this main body.At this moment, the thickness of described escapement can be uniformly.
The thickness slip of the first of described main body can be constant.
The thickness slip of the first of described main body can be rising.
Described upper caldding layer, lower caldding layer and central overlay satisfy following condition:
T 2/T 1＜5
Wherein, T 1Be the thickness of central overlay, T 2Maximum ga(u)ge for one of upper caldding layer and lower caldding layer.
Described upper caldding layer can comprise from by chromium oxide Cr 2O 3, titanium nitride TiN, zirconia ZrO 2, class bores the material of selecting in the combination that carbon and above-mentioned several composition constitutes.
Described electron emission unit can comprise: negative electrode and gate electrode are formed at first substrate and mutually insulated; Electron-emitting area connects negative electrode; Focusing electrode, be formed on this negative electrode and the gate electrode and with the two insulation.
Described escapement can be set on the described focusing electrode.
Described electron-emitting area can comprise from boring carbon, C by carbon nano-tube, graphite, gnf, diamond, class 60, silicon nm-class conducting wire and above-mentioned several the combination that constitutes of composition in the material selected.
Description of drawings
Will be apparent for the more complete beneficial effect that understanding and the present invention brought of the present invention, by becoming better understood with reference to the detailed description below in conjunction with accompanying drawing, in the accompanying drawing, identical reference marker is indicated same or analogous parts as these;
The decomposition diagram that Figure 1A is disconnected for the part based on the electron emission display device of first embodiment of the invention;
Figure 1B is the zoomed-in view of the part A of Figure 1A;
Fig. 2 is the cross section view that the part of the electron emission display device of Figure 1A is disconnected;
Fig. 3 is the amplification profile view of escapement, focusing electrode and second insulating barrier of the electron emission display device of Figure 1A;
Fig. 4 is the amplification profile view based on the escapement of the electron emission display device of second embodiment of the invention, focusing electrode and second insulating barrier;
Fig. 5 is the amplification profile view based on the escapement of the electron emission display device of third embodiment of the invention, focusing electrode and second insulating barrier;
Fig. 6 is the amplification profile view based on the escapement of the electron emission display device of fourth embodiment of the invention, focusing electrode and second insulating barrier.
Embodiment
To be described more fully with reference to accompanying drawing the present invention, wherein the embodiment of the invention is illustrated.Though, the present invention may be presented as multiple multi-form, but it should not be construed as limited to cited embodiment here, and the proposition of these embodiment is for so that this discloses thoroughly, complete, and fully passes on notion of the present invention to those skilled in the art.In the case of any possible, identical label will be used to each accompanying drawing and indicate same or analogous parts.
Figure 1A illustrates electron emission display device based on first embodiment of the invention to Fig. 3.
At first referring to Figure 1A, 1B and 2, comprise first substrate and second substrate 2 and 4 based on the electron emission display device 1 of first embodiment of the invention, it is faced mutually with predetermined interval respectively.Containment member (not being illustrated) is provided in the periphery of this first substrate and second substrate 2 and 4 respectively, with these two base plate seals together.The space gas bleeding that goes out with the sealing component limit respectively by this first substrate and second substrate 2 and 4 and constitute a vacuum degree and be retained as about 10 -6The vacuum packet of holder.
Electron emission unit 101 comprises electron-emitting area 6 and the drive electrode that is arranged in first substrate 2, as is respectively applied for negative electrode and gate electrode 8 and 10 of the electronics emission of control electron emission region 6.
In the present embodiment, negative electrode 8 is aligned to candy strip along a certain direction (among Fig. 1 along Y-axis), and first insulating barrier 12 is formed on first substrate 2 with abundant covering negative electrode 8.Gate electrode 10 along a certain direction (among Fig. 1 along X-axis) on first insulating barrier, be aligned to candy strip in case with negative electrode 8 with right-angle crossing.
One or more electron-emitting areas 6 are formed at the intersection region of negative electrode 8 and gate electrode 10 separately.Form corresponding to the opening 122 and 102 of electron-emitting area 6 and to see through first insulating barrier 12 and gate electrode 10 exposes this electron-emitting area 6.
In the present embodiment, show for example that electron-emitting area 6 is formed circle and, but the present invention is not limited to this example along the example of the length arrangement of negative electrode.
This electron-emitting area 6 is made of certain material, and such as material containing carbon or nano material, on certain electric field is applied in this kind material the time, this kind material will be launched electronics under vacuum environment.For example, this electron-emitting area 6 can bore carbon, C by carbon nano-tube, graphite, gnf, diamond, class 60, silicon nm-class conducting wire or above-mentioned every composition constitute.
Simultaneously, in the present embodiment, also show the example that gate electrode 10 is set on the negative electrode and inserts first insulating barrier 12 between the two.Yet the present invention is not limited to this example.That is, negative electrode 8 can be set on the gate electrode 10.In such cases, electron-emitting area can be formed on first insulating barrier and contact the surface of negative electrode 8.
Second insulating barrier 14 is formed on first insulating barrier 12 with covering gate electrode 10, and focusing electrode 16 is formed on second insulating barrier 14.
Opening 142 and 162 forms through the focusing electrode 16 and second insulating barrier 14 and exposes electron-emitting area 6.This opening 142 and 162 corresponds respectively to the intersection region (below, refer to " unit pixel zone ") of each negative electrode and gate electrode 6 and 10.This focusing electrode 16 can be formed on the whole surface of first substrate 2 on second insulating barrier, perhaps can be formed the predetermined pattern with a plurality of zones.
This electron emission device comprises: at least one electron-emitting area 6 on first insulating barrier and second insulating barrier 12 and 14 part, focusing electrode 16 and the per unit pixel area separately.
Following more detailed description Optical Transmit Unit.Be used to strengthen the fluorescence coating 18 of image comparison effect and the surface that black layer 20 is formed at second substrate 4 in the face of first substrate.Each positive electrode 22, it is made of as aluminium metal level, is formed at this fluorescence coating and black layer 18 and 20 respectively.
This positive electrode 22 is used for improving screen intensity by receiving certain high voltage and will reflexing to second substrate 4 by the luminous ray that fluorescence coating 18 is radiated first substrate 2, and this high voltage is used for the accelerated electron wave beam.This positive electrode 22 is set at the effective coverage of second substrate 4.
This positive electrode can be transparency conducting layer, and it is made of the non-metallic layer such as indium tin oxide (ITO).In such cases, this positive electrode is formed at fluorescence coating respectively and is deceived layer 18 and 20 in the face of on the surface of second substrate 4.Perhaps, this positive electrode can comprise metal level and transparency conducting layer.
Each escapement 24 is arranged at respectively between first substrate and second substrate 2 and 4, is used for keeping one unchangeably at interval with the outside pressure that contends with between each comfortable this first substrate and second substrate 2 and 4.These escapements 24 are set at the part of black layer 20 to avoid interference fluorescence coating 18.
In the present embodiment, this escapement 24 comprises main body 26 and is formed at the main body side and has the cover layer 28 of variable thickness.
The main body 26 of this escapement 24 can be made of rectangle or circular cylinder or the pottery or the glass of wall shape.
As Figure 1B and shown in Figure 2, this cover layer 28 comprises the lower caldding layer 284 of the upper caldding layer 282 that contacts positive electrode 22, contact focusing electrode 16 and the central overlay 286 that this upper caldding layer 282 and lower caldding layer 284 are fused.
As shown in Figure 3, the thickness of this lower caldding layer 284 increases to the part that connects focusing electrode 16 to the lower end of this main body 26 gradually from the part that connects this central overlay 286.Be exactly that the thickness of this lower caldding layer is greater than this central overlay 286.So this lower caldding layer 284 becomes big to reduce the impedance of cover layer 28 with the contact area of focusing electrode 16.
Same, the thickness of upper caldding layer 282 increases to the part that connects positive electrode 22 to the upper end of this main body 26 gradually from the part that connects this central overlay 286.
The maximum ga(u)ge T of this lower caldding layer 284 2Can reach the thickness T of this central overlay 286 1Five times of (T 2/ T 1＜5).Maximum ga(u)ge T when this lower caldding layer 284 2Thickness T greater than this central overlay 286 1Five times the time, may encounter difficulties in the production process, and this lower caldding layer 284 may break when this escapement is placed in the vacuum packet.
The thickness increment rate of this lower caldding layer 284 can be constant.Be exactly that the thickness of this lower caldding layer 284 increases so that the section configuration of this cover layer 284 linearly changes.
Just as described above, this cover layer 28 is formed on the side of main body 26 and contacts positive electrode and focusing electrode 22 and 16 respectively, thereby allows faint electric current to flow between positive electrode and focusing electrode 22 and 16 respectively by cover layer 28.In this, because the thickness of this upper caldding layer and lower caldding layer 282 and 284 increases to focusing electrode and positive electrode 16 and 22 respectively, tectal impedance has reduced, thereby should can effectively be realized by the electric current of cover layer 284.
This cover layer 284 can be by chromium oxide (Cr 2O 3), titanium nitride (TiN), zirconia (ZrO 2), the class composition that bores carbon or above-mentioned several constitutes.
This cover layer 283 can be handled by electron beam deposition, sputter or spraying plating and form.Here, mask may be used to form the cover layer that this has variable thickness.
Fig. 4 shows based on the escapement of the electron emission display device of second embodiment of the invention, focusing electrode and second insulating barrier.In the present embodiment, the thickness increment rate of lower caldding layer 288 increases downwards makes that the section configuration of this lower caldding layer 288 is a curve-like.
In the aforementioned embodiment, show the example of the thickness of main body 26 for example for the varied in thickness of uniform lower caldding layer 284 and 288.Yet the present invention is not limited to this example.That is, lower caldding layer can have the variable thickness by changing body thickness.
Fig. 5 shows based on the escapement of the electron emission display device of third embodiment of the invention, focusing electrode and second insulating barrier, and Fig. 6 is the amplification view of escapement, focusing electrode and second insulating barrier based on the electron emission display device of fourth embodiment of the invention.
With reference to Fig. 5, escapement 30 has main body 32, and the thickness of these main body 32 bottoms reduces downwards gradually, and the cover layer 34 that also has the main body of being formed at 32 sides makes the thickness of integral body of this escapement even.So the thickness of lower caldding layer 342 increases downwards by the thickness slip of main body 32.The thickness slip of these main body 32 bottoms is constant.
With reference to Fig. 6, the thickness of main body 36 bottoms reduces downwards gradually by the thickness slip that increases gradually.Therefore, the section shape of the bottom of this main body 36 can curved shape.
Be applied to lower caldding layer structure, material, shape and thickness change can be applied to the identical of upper caldding layer.
Though, the electron emission display device with FEA device in the above-described embodiments as an example, the present invention is not limited to this example.That is, the present invention also can be applicable to have the electron emission display device of other type electron emission device, as: SCE device, MIM device or MIS device.
Based on the present invention because escapement has variable cover layer, between this cover layer and the focusing electrode and/or this cover layer and positive electrode between contact area can increase, thereby reduce contact fault with electrode.Therefore, the conductivity of this escapement has been enhanced, thereby effectively discharges second electron to the outside by this cover layer.
Though the above embodiment of the invention is described in detail, various conversion and/or the modification that should understand basic creative notion described here clearly still drop within the additional spirit of the present invention that claim limited and protection range.

Claims (16)

1, a kind of escapement comprises:
Main body is used for first substrate and second substrate that have first electrode layer and the second electrode lay respectively spaced apart;
Cover layer is formed at the side of this main body;
Wherein, this cover layer has the first of one of this first electrode layer of contact and the second electrode lay and the second portion of the core of the side that is formed at this main body, and the thickness of this first is greater than the thickness of this second portion.
2, escapement as claimed in claim 1, wherein, this cover layer comprises that a upper caldding layer that is used to contact the second electrode lay, one are used to contact the central core that the lower caldding layer of first electrode layer and fuse this upper caldding layer and lower caldding layer; Wherein, this upper caldding layer increases to an end of described main body from the part that is connected with central overlay gradually with one thickness in the lower caldding layer at least.
3, a kind of electron emission display device comprises:
First substrate and second substrate are faced mutually to form vacuum packet;
Electron emission unit is arranged on this first substrate;
Optical Transmit Unit is arranged on this second substrate;
Escapement is arranged between this first substrate and second substrate;
Wherein, this escapement comprises:
Main body is arranged between first substrate and second substrate that has first electrode layer and the second electrode lay respectively;
Cover layer is formed at the side of this main body;
Wherein, this cover layer has the first of one of this first electrode layer of contact and the second electrode lay and the second portion of the core of the side that is formed at this main body, and the thickness of this first is greater than the thickness of this second portion.
4, electron emission display device as claimed in claim 3, wherein, this cover layer comprises: contact the upper caldding layer of described Optical Transmit Unit, contact the lower caldding layer of described electron emission unit, and the central core that this upper caldding layer and lower caldding layer are fused;
Wherein, this upper caldding layer increases to an end of described main body from the part that is connected with central overlay gradually with one thickness in the lower caldding layer at least.
5, electron emission display device as claimed in claim 4, wherein, the thickness of described main body is uniform; Wherein, one varied in thickness in described at least upper caldding layer and the lower caldding layer.
6, electron emission display device as claimed in claim 5, wherein, one thickness increment rate in described at least upper caldding layer and the lower caldding layer is constant.
7, electron emission display device as claimed in claim 5, wherein, one thickness increment rate in described at least upper caldding layer and the lower caldding layer rises.
8, electron emission display device as claimed in claim 4, wherein, described main body has corresponding at least one first in described upper caldding layer and the lower caldding layer;
Wherein, the thickness of the first of this main body reduces gradually to the other end of this main body.
9, electron emission display device as claimed in claim 8, wherein, the thickness of described escapement is uniform.
10, electron emission display device as claimed in claim 8, wherein, the thickness slip of the first of described main body is constant.
11, electron emission display device as claimed in claim 8, wherein, the thickness slip of the first of described main body rises.
12, electron emission display device as claimed in claim 4, wherein, described upper caldding layer, lower caldding layer and central overlay satisfy following condition:
T 2/T 1＜5
Wherein, T 1Be the thickness of central overlay, T 2Maximum ga(u)ge for one of upper caldding layer and lower caldding layer.
13, electron emission display device as claimed in claim 4, wherein, described upper caldding layer comprises from by chromium oxide Cr 2O 3, titanium nitride TiN, zirconia ZrO 2, class bores the material of selecting in the combination that carbon and above-mentioned several composition constitutes.
14, electron emission display device as claimed in claim 3, wherein, described electron emission unit comprises:
Negative electrode and gate electrode are formed at described first substrate and mutually insulated;
Electron-emitting area connects this negative electrode;
Focusing electrode, be formed on this negative electrode and the gate electrode and with the two insulation.
15, electron emission display device as claimed in claim 14, wherein, described escapement is set on the described focusing electrode.
16, electron emission display device as claimed in claim 14, wherein, described electron-emitting area comprises from boring carbon, C by carbon nano-tube, graphite, gnf, diamond, class 60, silicon nm-class conducting wire and above-mentioned several the combination that constitutes of composition in the material selected.
CNB2006101507273A 2005-10-25 2006-10-24 A kind of escapement and electron emission display device with escapement Expired - Fee Related CN100570799C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050100667 2005-10-25
KR1020050100667A KR20070044586A (en) 2005-10-25 2005-10-25 Spacer and electron emission display device having the spacer

Publications (2)

Publication Number Publication Date
CN1956135A true CN1956135A (en) 2007-05-02
CN100570799C CN100570799C (en) 2009-12-16

Family

ID=37649285

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101507273A Expired - Fee Related CN100570799C (en) 2005-10-25 2006-10-24 A kind of escapement and electron emission display device with escapement

Country Status (6)

Country Link
US (1) US20070164647A1 (en)
EP (1) EP1780755B1 (en)
JP (1) JP2007123274A (en)
KR (1) KR20070044586A (en)
CN (1) CN100570799C (en)
DE (1) DE602006007527D1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807504A (en) * 2009-02-12 2010-08-18 三星Sdi株式会社 Plasma display
CN102169787A (en) * 2010-02-25 2011-08-31 佳能株式会社 Light emitting substrate, manufacturing method thereof, and image display apparatus having the light emitting substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726529A (en) * 1996-05-28 1998-03-10 Motorola Spacer for a field emission display
US6506087B1 (en) * 1998-05-01 2003-01-14 Canon Kabushiki Kaisha Method and manufacturing an image forming apparatus having improved spacers
JP3073491B2 (en) * 1998-06-24 2000-08-07 キヤノン株式会社 Electron beam apparatus, image forming apparatus using the same, and method of manufacturing members used in the electron beam apparatus
JP4115051B2 (en) * 1998-10-07 2008-07-09 キヤノン株式会社 Electron beam equipment
EP1152452B1 (en) * 1999-01-28 2011-03-23 Canon Kabushiki Kaisha Electron beam device
JP2000251708A (en) * 1999-02-25 2000-09-14 Canon Inc Manufacture of spacer for electron beam device, spacer for electron beam device and electron beam device provided with the spacer
US6861798B1 (en) * 1999-02-26 2005-03-01 Candescent Technologies Corporation Tailored spacer wall coatings for reduced secondary electron emission
KR100381437B1 (en) * 2000-12-29 2003-04-26 엘지전자 주식회사 The joining method of FED's spacer
US6791255B1 (en) * 2002-09-04 2004-09-14 Candescent Intellectual Property Services, Inc. High coefficient of thermal expansion spacer structure materials
JP2004228084A (en) * 2003-01-21 2004-08-12 Samsung Sdi Co Ltd Field emission element
JP2005026176A (en) * 2003-07-02 2005-01-27 Sony Corp Display device
KR20050034313A (en) * 2003-10-09 2005-04-14 삼성에스디아이 주식회사 Field emission display device and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101807504A (en) * 2009-02-12 2010-08-18 三星Sdi株式会社 Plasma display
CN102169787A (en) * 2010-02-25 2011-08-31 佳能株式会社 Light emitting substrate, manufacturing method thereof, and image display apparatus having the light emitting substrate

Also Published As

Publication number Publication date
CN100570799C (en) 2009-12-16
JP2007123274A (en) 2007-05-17
EP1780755A1 (en) 2007-05-02
US20070164647A1 (en) 2007-07-19
EP1780755B1 (en) 2009-07-01
DE602006007527D1 (en) 2009-08-13
KR20070044586A (en) 2007-04-30

Similar Documents

Publication Publication Date Title
CN1288702C (en) Field-emission display device with carbonyl ejector
CN1756449A (en) Field emission display
CN1877779A (en) Electron emission device, electron emission display, and manufacturing method of the electron emission device
CN1648968A (en) Flat panel display device and method of manufacturing the same
CN1906724A (en) Field emission device and field emission display device using the same
CN1913090A (en) Electron emission device, electron emission type backlight unit and flat display apparatus having the same.
CN1959909A (en) Electron emission device
CN1956134A (en) Vacuum envelope and electron emission display device using the same
CN1828810A (en) Electron emission device and method for manufacturing the same
CN1870204A (en) Vacuum vessel, its method of manufacture, and electron emission display using the vacuum vessel
CN1913089A (en) Electron emission device, electron emission type backlight unit and flat display apparatus having the same
CN1210755C (en) Carbon microtubule field emitting display device and its manufacturing method
CN1310277C (en) Field emitting display with carbon-based emitter
CN1510711A (en) Field-emission displaying device for enhancing electronic transmission characteristic transmitter arranging structure
CN100341102C (en) Electron emission device
CN1801424A (en) Electron emission device
CN1298011C (en) Electron emission device
CN1956135A (en) Spacer and electron emission display device having the spacer
CN1862755A (en) Electron emission device and method for manufacturing the same
CN1866459A (en) Electron emission device
CN1801452A (en) Flat panel display, gate electrode structure, and gate electrode structure manufacturing method
CN1873890A (en) Electron emission device
CN1959918A (en) Electron emission display
CN1959914A (en) Vacuum vessel and electron emission display device using the same
CN1956133A (en) Electron emission device and electron emission dispaly device using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091216

Termination date: 20121024