CN1951799A - Preparation method of metal nanometer line array - Google Patents

Preparation method of metal nanometer line array Download PDF

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Publication number
CN1951799A
CN1951799A CNA2005101005446A CN200510100544A CN1951799A CN 1951799 A CN1951799 A CN 1951799A CN A2005101005446 A CNA2005101005446 A CN A2005101005446A CN 200510100544 A CN200510100544 A CN 200510100544A CN 1951799 A CN1951799 A CN 1951799A
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China
Prior art keywords
metal
nano
nanometer line
array
preparation
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CNA2005101005446A
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Chinese (zh)
Inventor
董才士
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNA2005101005446A priority Critical patent/CN1951799A/en
Priority to US11/432,995 priority patent/US20070089564A1/en
Publication of CN1951799A publication Critical patent/CN1951799A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0547—Nanofibres or nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/18—Non-metallic particles coated with metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1094—Conducting structures comprising nanotubes or nanowires

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention relates to a method for preparing metal nanometer line array, which comprises: providing a carbon nanometer tube array; emerging the array in nanometer metal gel with nanometer metal particles and solvent, to mount the particles on the surface of carbon nanometer tube; taking out said array, and thermally treating the array at the temperature not lower than the fusion point of nanometer metal, to connect the nanometer metal particles together to form a crystal metal nanometer line array.

Description

A kind of preparation method of metal nanometer line array
[technical field]
The present invention relates to a kind of preparation method of nano-wire array, relate in particular to a kind of preparation method of metal nanometer line array.
[background technology]
The one-dimentional structure nano material as nanometer rods, metal nanometer line and nanotube etc., is the focus of current nano materials research.Wherein metal nanometer line has characteristics such as unique light, electricity, catalysis, and good prospects for application is arranged in fields such as nano electron devices, has therefore caused people's very big concern.At present, more employing template is synthesized various metal nanometer lines, as utilizes porous mediums such as CNT, porous silica to synthesize metal nanometer line as " die "; Or utilize linear molecule such as DNA, rod-shaped micelle or molecular combination as " soft mode " synthetic metal nanometer lines.
Utilize a plurality of dispersing Nano carbon tubes generally in nano metal colloidal sol, to carry out as the synthetic metal nanometer line of template, nano metal particles and template all are dispersed in the colloidal sol, utilize the self assembly (Self-Assembly) between nano metal particles and the template can form the CNT template that nano metal particles is adsorbed on the surface, again after heat treatment, can form the crystalline phase metal nanometer line.
But the prepared metal nanometer line of this kind processing procedure disperses, and direction especially is difficult for being applied to the nano-component field at random.
[summary of the invention]
In view of this, be necessary to provide a kind of method that can generate the metal nanometer line array of marshalling.
A kind of preparation method of metal nanometer line array, it may further comprise the steps: a carbon nano pipe array is provided; Described carbon nano pipe array is immersed in one to be contained in the nano metal colloidal sol of nano-metal particle and solvent and makes the nano-metal particle self assembly in carbon nano tube surface; Take out described carbon nano pipe array, and described self assembly had the carbon nano-pipe array of nano-metal particle to be listed in to heat-treat under the temperature that is equal to or higher than described nano metal fusing point described nano-metal particle is connected together form a crystalline phase metal nanometer line array.
With respect to prior art, above-mentioned preparation method utilizes a carbon nano pipe array and nano-metal particle to carry out self assembly, more after heat treatment, can get the crystalline phase metal nanometer line array of a marshalling, and this method is convenient to practical application.
[description of drawings]
Fig. 1 is preparation method's flow chart of metal nanometer line array of the present invention.
Fig. 2 is preparation method's schematic diagram of metal nanometer line array of the present invention.
[specific embodiment]
Below with reference to the preparation method who illustrates a kind of metal nanometer line array.
See also Fig. 1 and Fig. 2, the preparation method of present embodiment metal nanometer line array may further comprise the steps:
Step 1 provides a carbon nano pipe array 10.Carbon nano pipe array 10 comprises the many CNTs 14 that are formed in the substrate 12.Substantially parallel between the CNT 14.Preferably, CNT 14 is vertical with substrate 12.Preparation method about carbon nano pipe array is ripe, can utilize chemical vapour deposition technique deposition of carbon nanotubes array 10 in substrate 12.
Step 2 is immersed in carbon nano pipe array 10 in the preformed nano metal colloidal sol 20 and carries out self assembly.Comprise solvent 22 in the nano metal colloidal sol 20 and be dispersed in nano-metal particle 24 in the solvent 22.
Solvent 22 can be water, chloroform, ethylene glycol and carbon number less than 5 alcohols.Assemble for preventing nano-metal particle 24, can in colloidal sol, add stabilizing agentof sol four octyl amines bromine salt (Tetraoctylzmmonium Bromide), natrium citricum or electronegative poly-4-SSS (Poly sodium 4-styrensnlfonate, PSS).Nano-metal particle 24 can be nanoscale gold, silver, copper, tin, nickel, germanium particle or its nanoparticle mixture.The nano-metal particle diameter can be 1 nanometer to 100 nanometers.
The soak time of carbon nano pipe array 10 in nano metal colloidal sol 20 is 5-72 hour.Preferred 10-30 hour.This step is to utilize the self assembly effect of 24 of CNT 14 and nano-metal particles, makes nano-metal particle 24 be adsorbed on CNT 14 surfaces.
Step 3 is taken out carbon nano pipe array 10.After the self assembly step, nano-metal particle 24 is adsorbed on CNT 14 surfaces, and this moment, nano-metal particle 24 was discontinuous.
Step 4 is heat-treated carbon nano pipe array 10.For obtaining the crystalline phase metal nanometer line, also need carbon nano pipe array 10 is heat-treated.Heat treatment is generally carried out in air, and the temperature during heat treatment is the fusion temperature that is equal to or greater than concrete nano-metal particle 24, different metal, and its fusion temperature also has difference.Because the fusing point of nano material reduces effect, its fusing point is all lower than macroscopical melting point metal, nanogold particle for example, and 300 ℃ are promptly fusible.Heat treatment period is generally 35-60 second.
After Overheating Treatment, the nano-metal particle 24 of dispersion connects together, and forms a crystalline phase metal nanometer line 30, and many crystalline phase metal nanometer line 30 proper alignment are formed a crystalline phase metal nanometer line array 40 in substrate 12.
The present invention utilizes a carbon nano pipe array as template, utilizes CNT and nano-metal particle to carry out self assembly, forms the metal nanometer line array of a marshalling.After heat treatment, the crystalline phase metal nanometer line array be can form, nano-sensor, nano-catalytic electrode are convenient to be applied to or as the fields such as filler of thermal interfacial material.

Claims (7)

1. the preparation method of a metal nanometer line array, it may further comprise the steps: a carbon nano pipe array is provided; Described carbon nano pipe array is immersed in one contains in the nano metal colloidal sol of nano-metal particle and solvent, make the nano-metal particle self assembly in carbon nano tube surface; Take out described carbon nano pipe array; And have the carbon nano-pipe array of nano-metal particle to be listed under the temperature that is equal to or higher than described nano metal fusing point described self assembly to heat-treat, described nano-metal particle is connected together form a crystalline phase metal nanometer line array.
2. the preparation method of metal nanometer line array as claimed in claim 1 is characterized in that described nano-metal particle can be nanoscale gold, silver, copper, tin, nickel, germanium particle or its nanoparticle mixture.
3. the preparation method of metal nanometer line array as claimed in claim 1 is characterized in that described solvent is water, chloroform, ethylene glycol or carbon number less than 5 alcohols.
4. the preparation method of metal nanometer line array as claimed in claim 1 is characterized in that described nano metal colloidal sol further comprises a stabilizing agentof sol.
5. the preparation method of metal nanometer line array as claimed in claim 4 is characterized in that described stabilizing agent is bromine salt, natrium citricum or the electronegative poly-4-SSS of four octyl amines.
6. the preparation method of metal nanometer line array as claimed in claim 1 is characterized in that described carbon nano-pipe array is listed in that soak time is 5-72 hour in the nano metal colloidal sol.
7. the preparation method of metal nanometer line array as claimed in claim 1 is characterized in that heat treatment time is 35-60 second.
CNA2005101005446A 2005-10-20 2005-10-20 Preparation method of metal nanometer line array Pending CN1951799A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNA2005101005446A CN1951799A (en) 2005-10-20 2005-10-20 Preparation method of metal nanometer line array
US11/432,995 US20070089564A1 (en) 2005-10-20 2006-05-12 Metal nanowire array and method for fabricating the same

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Application Number Priority Date Filing Date Title
CNA2005101005446A CN1951799A (en) 2005-10-20 2005-10-20 Preparation method of metal nanometer line array

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101399167B (en) * 2008-07-15 2010-04-14 北方工业大学 Method for assembling silicon nano-wire
CN101376497B (en) * 2007-08-31 2011-06-22 清华大学 Carbon nano-tube composite material precast member and preparation thereof
CN102358615A (en) * 2011-11-07 2012-02-22 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of multifunctional integrated nano-wire array
US10580591B2 (en) 2013-11-05 2020-03-03 The Regents Of California, Riverside Metal-oxide anchored graphene and carbon-nanotube hybrid foam

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8137759B2 (en) * 2006-04-07 2012-03-20 The Regents Of The University Of California Gold nanostructures and methods of use
US7888583B2 (en) * 2007-05-07 2011-02-15 Wisconsin Alumni Research Foundation Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
TWI353963B (en) * 2007-10-02 2011-12-11 Univ Nat Taiwan Science Tech Method of fabricating one-dimensional metallic nan
US20150322589A1 (en) * 2012-06-29 2015-11-12 Northeastern University Three-Dimensional Crystalline, Homogenous, and Hybrid Nanostructures Fabricated by Electric Field Directed Assembly of Nanoelements
US8951892B2 (en) 2012-06-29 2015-02-10 Freescale Semiconductor, Inc. Applications for nanopillar structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232706B1 (en) * 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
CN1248959C (en) * 2002-09-17 2006-04-05 清华大学 Carbon nano pipe array growth method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101376497B (en) * 2007-08-31 2011-06-22 清华大学 Carbon nano-tube composite material precast member and preparation thereof
CN101399167B (en) * 2008-07-15 2010-04-14 北方工业大学 Method for assembling silicon nano-wire
CN102358615A (en) * 2011-11-07 2012-02-22 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of multifunctional integrated nano-wire array
CN102358615B (en) * 2011-11-07 2014-04-16 中国科学院苏州纳米技术与纳米仿生研究所 Preparation method of multifunctional integrated nano-wire array
US10580591B2 (en) 2013-11-05 2020-03-03 The Regents Of California, Riverside Metal-oxide anchored graphene and carbon-nanotube hybrid foam

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Open date: 20070425