CN1943002A - Apparatus and method for plasma treating article - Google Patents
Apparatus and method for plasma treating article Download PDFInfo
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- CN1943002A CN1943002A CNA2004800428396A CN200480042839A CN1943002A CN 1943002 A CN1943002 A CN 1943002A CN A2004800428396 A CNA2004800428396 A CN A2004800428396A CN 200480042839 A CN200480042839 A CN 200480042839A CN 1943002 A CN1943002 A CN 1943002A
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention provides a plasma source (102) in which a gap (110) (i.e. cathode-to-anode distance) is adjustable in real time to a desired distance in response to selected conditions within a plasma chamber (104). At least one sensor (116) monitors and detects any change in such conditions within the plasma chamber (104). An apparatus (100) comprising at least one plasma source (102) generates at least one plasma that is stable and adjustable in real time. In one embodiment, the apparatus (100) includes multiple plasma sources (102) that can either be 'tuned' in real time to generate plasmas that are similar to each or, conversely, 'detuned' to generate dissimilar plasmas. The apparatus (100) may be used to provide plasma treatment - such as, but not limited to, coating, etching and activation - for an article (160). Methods of providing such plasmas and treating an article (160) using such plasmas are also disclosed.
Description
Technical field
The present invention relates to a kind of basic device of plasma uniformly that produces.More specifically, the present invention relates to a kind of device, this device is used to produce the basic plasma uniformly of handling object.The invention particularly relates to a kind of device that can produce controlled, adjustable, as to be used to handle object plasma.
Background technology
Plasma source is used to various items is carried out various surface treatments.These surface-treated examples comprise and deposit various coatings from the teeth outwards that the plasma etching and the plasma that carry out the surface activate.The characteristic of plasma-treating technology is subjected to the influence of the running parameter of plasma source to a great extent.
Can use various plasma sources (surf zone of diameter in about 10-15cm scope to be handled as expanding thermal plasma source (expandingthermal plasma is also referred to as " ETP ").In plasma treatment, each condition of plasma source may change.For example, because the corrosion of negative electrode, thereby the distance between negative electrode and the anode may change in time, or cathode voltage or operating air pressure may change.For offsetting this variation (the especially change of distance between negative electrode and the anode), need Interrupt Process process and dismounting plasma source usually.
The array that can use a plurality of plasma sources to form comes bigger basal region is carried out plated film.Ideally, the plasma that each plasma source produces in the array should have identical characteristic.Yet, in practice, often can be observed the difference aspect plasma characteristics between source and the source and the difference of the plasma treatment that causes thus.This species diversity is relevant with the difference of previously described each plasma source to a great extent.
Can not offset the variation in individual plasma source in real time.This correction needs the Interrupt Process process and dismantles plasma source.When using a plurality of plasma source, wish to make between the source of plasma of generation and the source difference usually for minimum.Therefore, need a kind of device that can produce stable, controlled plasma.Also need a kind of energy to use stable, controlled plasma object to be carried out the device of plasma treatment.Also need a kind of plasma source that produces plasma, this source of scalable changes the character of the plasma that is produced.
Summary of the invention
By but the device of the plasma that produces at least a stable and real-time regulated is provided, the present invention has satisfied above-mentioned and other demands.In one embodiment, this device comprises a plurality of plasma sources, can be in real time with these plasma sources " tuning ", and the plasma that is analogous to each other with generation, perhaps on the contrary, can be with they " de-tuned ", to produce not similar plasma.This device can be used for plasma treatment (such as but not limited to plated film, etching, heating, illumination or illumination and the activation of object).The method that above-mentioned plasma is provided and uses above-mentioned plasma treatment object is also disclosed.But the present invention also provides a kind of plasma source of running parameter real-time regulated.The method that above-mentioned plasma is provided and uses above-mentioned plasma treatment object is also disclosed.
Therefore, one aspect of the present invention provides a kind of device that is used to produce controlled substantially plasma.This device comprises: at least one plasma source, and this plasma source comprises: the plasma chamber that produces controlled substantially plasma therein; Be arranged at least one negative electrode and anode in this plasma chamber, this at least one negative electrode and anode are separated by an adjustable clearance; Be connected to the power supply of above-mentioned anode and above-mentioned at least one negative electrode, be used for applying voltage at above-mentioned anode and above-mentioned at least one negative electrode two ends; The plasma gas inlet, it is indoor to be used for that the gas (hereinafter referred to as " plasma gas ") that produces plasma is introduced above-mentioned plasma with plasma gas flow speed from the plasma (orifice) gas body source; Transducer is used to the condition that monitors that plasma is indoor; Second Room that has fluid communication by outlet and plasma chamber, wherein, at this second indoor maintenance first air pressure low second air pressure more indoor than plasma, and wherein above-mentioned controlled substantially plasma flows into second Room by above-mentioned outlet from plasma chamber.
Second aspect of the present invention provides a kind of plasma source that is used to produce controlled substantially plasma.This plasma source comprises: the plasma chamber that produces above-mentioned controlled substantially plasma therein; Be arranged on the anode of first end of above-mentioned plasma chamber, this first end has outlet, and above-mentioned controlled substantially plasma leaves above-mentioned plasma chamber by this outlet; Be arranged at least one the adjustable negative electrode in the above-mentioned plasma chamber, wherein, above-mentioned at least one adjustable negative electrode can move, to form the gap between above-mentioned anode and above-mentioned at least one adjustable negative electrode; Be connected to the power supply of above-mentioned anode and above-mentioned at least one adjustable negative electrode, be used for applying voltage at above-mentioned anode and above-mentioned at least one adjustable negative electrode two ends; The plasma gas inlet, it is indoor to be used for that plasma gas is incorporated into plasma from the plasma (orifice) gas body source with the plasma gas flow velocity; At least one transducer is used to detect and monitor the condition that plasma is indoor.
The 3rd aspect of the present invention provides the device of the controlled substantially expanding thermal plasma of a kind of generation.This device comprises: at least one expanding thermal plasma source, and this at least one expanding thermal plasma source comprises: the plasma chamber that produces above-mentioned controlled substantially plasma therein; Anode; Be arranged at least one the adjustable negative electrode in the above-mentioned plasma chamber, wherein, this at least one adjustable negative electrode can move, to form the gap between above-mentioned anode and above-mentioned at least one adjustable negative electrode; Be connected to the power supply of above-mentioned anode and above-mentioned at least one adjustable negative electrode, be used for applying voltage at above-mentioned anode and above-mentioned at least one adjustable negative electrode two ends; The plasma gas inlet, it is indoor to be used for plasma gas flow speed plasma gas being incorporated into plasma from plasma gas source; At least one transducer is used to detect and monitor the condition that plasma is indoor; And second Room that has fluid communication by outlet and plasma chamber, wherein, at this second indoor maintenance first air pressure low second air pressure more indoor than plasma, and wherein above-mentioned controlled substantially plasma flows into second Room by above-mentioned outlet from plasma chamber.。
The 4th aspect of the present invention provides a kind of method that is used to produce controlled substantially plasma.Said method comprising the steps of: at least one plasma source is provided, and this at least one plasma source comprises: plasma chamber, anode, be arranged at least one the adjustable negative electrode in this plasma chamber, the power supply that is connected to above-mentioned anode and above-mentioned at least one adjustable negative electrode, plasma gas inlet and at least one transducer; By above-mentioned plasma gas inlet plasma gas is offered plasma chamber in above-mentioned at least one plasma source; In this plasma chamber, produce plasma; Monitor at least one indoor parameter of plasma; And control above-mentioned plasma, wherein,, control above-mentioned plasma by regulating the indoor condition of plasma based on supervision to above-mentioned at least one parameter.
The 5th aspect of the present invention provides the method that the controlled substantially expanding thermal plasma of a kind of use is handled object.This method may further comprise the steps: at least one expanding thermal plasma source is provided, wherein, this at least one expanding thermal plasma source comprises: plasma chamber, anode, be arranged at least one the adjustable negative electrode in this plasma chamber, the power supply that is connected to above-mentioned anode and above-mentioned at least one adjustable negative electrode, plasma gas inlet and at least one transducer; Plasma gas is offered the plasma chamber in each source in above-mentioned at least one plasma source by above-mentioned plasma gas inlet; In above-mentioned plasma chamber, produce plasma; Monitor at least one parameter that this plasma is indoor; And control above-mentioned plasma, wherein,, control above-mentioned plasma by regulating the indoor condition of this plasma based on supervision to above-mentioned at least one parameter; By being expanded through outlet, above-mentioned plasma enters the second indoor expanding thermal plasma that forms that has fluid communication with above-mentioned plasma chamber, and wherein above-mentioned second Room comprises above-mentioned object, and keeps below second air pressure of the first indoor air pressure of plasma; And above-mentioned expanding thermal plasma is incident on above-mentioned object surface, thus this object is handled.
By reading the following detailed description, accompanying drawing and claim, these and other aspects, advantage and the notable feature that the present invention may be better understood.
Description of drawings
Fig. 1 is the schematic representation of apparatus that is used to produce controlled substantially plasma;
Fig. 2 shows the cathode voltage measured and the functional relation of cathode length when entering the indoor argon gas of plasma for constant flow rate;
Fig. 3 shows the plasma chamber pressure measured and the functional relation of cathode length when entering the indoor argon gas of plasma for constant flow rate;
Fig. 4 shows the functional relation of cathode voltage, plasma chamber pressure and time;
Fig. 5 shows the deposition profile of the diamond dust film that uses a plurality of plasma source depositions under tuning and de-tuned state; And
Fig. 6 shows each Taber Delta haze value of resistant silicone coatings and the substrate location functional relation with respect to the position in each ETP source.
Embodiment
In the following description, in each width of cloth figure, similar Reference numeral is represented similar or corresponding components.The word that should be appreciated that each term (as " top ", " bottom ", " outwards ", " inwardly " or the like) to be for simplicity and adopt should not be considered as them restrictive term.
With reference to the accompanying drawings, should be appreciated that accompanying drawing only is used to describe embodiments of the invention, but not be used to limit the invention.
With reference now to Fig. 1,, wherein shown the device 100 that is used to produce controlled substantially plasma of the present invention, this device comprises first plasma source 102, second plasma source 202 and second Room 140.The present invention is not limited to embodiment shown in Figure 1.Device 100 can comprise the individual plasma source or surpass two plasma source.Although should be appreciated that the various features of describing first plasma source 102 in detail, and quoted these features in to the following description of the present invention, following description also can be used for second plasma source 202.
Be injected in the plasma chamber 104 by at least one plasma gas inlet 114 gas (hereinafter referred to as " plasma gas ") that will be used to produce plasma.This plasma gas can comprise at least a inertia or nonreactive gas (such as but not limited to inert gases such as helium, neon, argon, krypton, xenons).In addition, using plasma to come among the embodiment of etched surfaces, above-mentioned plasma gas can comprise a kind of reacting gas (such as but not limited to hydrogen, nitrogen, oxygen, fluorine or chlorine).Can control the flow of plasma gas by the flow controller (as mass flow controller) between plasma gas source (not shown) and at least one plasma gas inlet 114.Enter the mouth 114 with plasma gas injected plasma chamber 104 by above-mentioned at least one plasma gas, and between negative electrode 106 and anode 108, generate electric arc, in plasma chamber 104, produced first plasma.Generating the required voltage of electric arc between negative electrode 106 and anode 108 is provided by power supply 112.In one embodiment, power supply 112 is adjustable DC power supply, and this power supply can provide electric current up to about 100 peaces during up to about 50 volts at voltage.By the vacuum system (not shown) air pressure of second Room 140 is remained in second air pressure far below the air pressure of first plasma chamber.In one embodiment, the air pressure of second Room 140 is maintained at than about 1 holder (about 133 handkerchiefs) low air pressure, preferably it is maintained at than the low air pressure of about 100 millitorrs (about 0.133 handkerchief), and the air pressure of plasma chamber 104 is maintained at least about 0.1 atmospheric pressure (about 1.01 * 10
4Handkerchief).Because have difference between first plasma chamber pressure and the second Room air pressure,, and expand and to enter second Room 140 so first plasma leaves by exporting 118.
In one embodiment, the plasma by one of them generation at least in first plasma source 102 and second plasma source 202 is expanding thermal plasma (below be also referred to as " ETP ").In ETP, produce cation and electronics by ionization in the electric arc that plasma source gas will is produced between at least one negative electrode 106 and anode 108, thereby produced plasma.For example, when producing argon plasma, argon is ionized, and has produced argon ion (Ar+) and electronics (e-).Then, plasma under low pressure is expanded to more volume, thus cool electronic and cation.In the present invention, plasma produces in plasma chamber 104, and enters second Room 140 by exporting 118 expansions.As previously mentioned, the air pressure of second Room 140 is maintained at the level far below the air pressure of plasma chamber 104.In ETP, cation and electron temperature are equal substantially, and are in the scope of about 0.1eV (about 1000K).In the plasma of other types, electronics have a sufficiently high temperature, thereby be enough to influence to a great extent the chemical property of plasma.In such plasma, cation has the temperature of about 0.1eV usually, and electronics has about 1eV (10000K) or higher temperature.Therefore, the electron temperature among the ETP is low excessively, thereby its energy shortage is so that direct ionization takes place the gas of any ETP of being introduced into.On the contrary, these gases may carry out charge-exchange with the electronics among the ETP or the ionization recombination reaction takes place.
The characteristic of the plasma that plasma source 102 produces depends in part on gap 110, and herein, this gap 110 is defined as the spacing between negative electrode 106 and the anode 108.Fig. 2 and Fig. 3 show the functional relation of cathode voltage and plasma chamber pressure and cathode length respectively.In this specific embodiment of the present invention, along with the increase of cathode length, gap 110 reduces.In every width of cloth figure, systematically change the distance between negative electrode and anode, and use the argon gas collection data that enter plasma chamber with constant flow rate.As shown in Figure 3, the air pressure of plasma reduces with the distance between negative electrode and the anode and reduces.Similarly, keep the required voltage of this plasma with the reducing and reduce of distance between negative electrode and the anode, as shown in Figure 2.
At the plasma source duration of work, the change of distance between negative electrode and the anode may take place.This change may be that the thermal expansion that plasma parts and plasma source block were installed or be provided with to burn into deposition materials, the machinery on negative electrode or anode because of negative electrode or anode causes.Fig. 4 shows as the cathode voltage of the function of time (being expressed as the number of times of the experiment of carrying out under the same conditions in Fig. 4) and the variation of plasma air pressure.Should be appreciated that the change of some factor-go up in the opposite direction with side shown in Figure 4 as deposition materials on negative electrode or anode-can cause.As time goes by with the appearance of the last variation of above-mentioned distance, keep required cathode voltage of described plasma and plasma air pressure also change (promptly increase or reduce).These trend are consistent with the situation shown in Fig. 2 and Fig. 3.Usually, can not the real-time regulated negative electrode and anode between distance, carry out this adjusting, generally need dismantle plasma source fully.
The invention provides plasma source 102, wherein, can respond the selected conditions (such as but not limited to plasma air pressure, cathode voltage, plasma current and plasma flow speed) in the plasma chamber 104 and gap 110 (be negative electrode and anode spacing from) is adjusted to desirable distance in real time.At least one transducer 116 monitors and detects any variation of these conditions in the plasma chamber 104.Be chosen in the characteristic that the transducer that uses in the plasma source 102 depends on that desire monitors.The limiting examples that can be used to monitor above-mentioned at least one transducer 116 of the condition in the plasma chamber 104 comprises: baroceptor, as having the transducer of fluid communication with plasma chamber 104; Be used to measure and detect the voltmeter (or any similar voltage measuring apparatus) of cathode voltage; And the ampere meter that is used to measure and detect plasma current.To offer controller by above-mentioned at least one transducer 116 detected any change, then, this controller is regulated gap 110 by the position of one of them in change negative electrode 106 and the anode 108, so that above-mentioned selected condition is maintained in the scope of hope.
In one embodiment, plasma source 102 comprises at least one adjustable negative electrode 106.By swap cathode 106, gap 110 can be set to preset distance.Shown in Fig. 2 and Fig. 3 difference, shown the change in gap 110 by the change of above-mentioned at least one transducer 116 detection and cathode voltage that monitors or plasma chamber pressure.For example, the change of negative electrode can show as the change of cathode voltage and plasma chamber pressure.Can use the plasma chamber pressure data of in statistical Process Control, obtaining to come gap 110 is controlled as feedback.At plasma source 102 duration of works, move adjustable negative electrode 106 by response from the input of above-mentioned at least one transducer 116, can anticathode change compensate, so that gap 110 is remained on selected distance.By this adjusting that target 106 carries out, can eliminate or reduce to a great extent the variation of plasma that change because of negative electrode causes, that produce by plasma source 104.Can or carry out this of adjustable cathode 106 in real time by controller and move with manual type.
In some instances, may wish in time and change the characteristic of the plasma that produces by plasma source 102.The limiting examples that duration of work changes the situation of plasma characteristics is included in a plurality of layers of deposition in the single substrate, or single object is carried out multiple plasma treatment.The ability in real-time regulated gap 110 allows to change with controlled manner the characteristic of the plasma that is produced by plasma source 102, and does not need to dismantle plasma source 102.
Can realize moving of adjustable negative electrode 106 by being connected to the pneumatic shuttle of negative electrode 106 movably.In one embodiment, this pneumatic shuttle comprises the pressing plate (pressureplate) that is connected to the rear portion of adjustable negative electrode 106 by hold-down screw or screw-and-nut transmission device.Depend on various conditions,, can increase or reduce gap 110 by applying or release pressure is given described pressing plate, perhaps, by using pressing plate as required, can be at plasma source 102 duration of works, when corrosion takes place adjustable negative electrode 106, gap 110 is remained on steady state value.In another embodiment, pneumatic shuttle can comprise the pneumatic actuator that is connected to adjustable negative electrode 106.Depend on various conditions, this pneumatic actuator can increase, reduce gap 110 by correspondingly moving adjustable negative electrode 106, or holds it in set point value.
In another embodiment, plasma source 102 also comprises screw-and-nut transmission device or worm gearing, is used for moving adjustable negative electrode 106 and adjusting gap 110.In yet another embodiment, adjustable negative electrode 106 comprises line, and by wire-sending device being connected to adjustable negative electrode 106, can realize moving of adjustable negative electrode 106, thereby increases, reduce gap 110, or holds it in set point value.
In one embodiment, can on the direction vertical, move adjustable negative electrode 106 with subtending board 122.Herein, the longitudinal axis of adjustable negative electrode 106 is concentric with outlet 118.In addition, adjustable negative electrode 106 can move on the direction parallel with subtending board 122.
In one embodiment, at plasma source 102 duration of works, negative electrode 106 is removable, and anode 108 is fixing.Yet, in other embodiments, can have movably first plasma source 102 of anode 108 and regulate gap 110 by providing.Can mechanism aforesaid by being similar to, that be used for mobile adjustable negative electrode 106 come moving anode 108.First plasma source 102 also can not only comprise movably negative electrode 106 but also comprise movably anode 108.
In device 100 comprised embodiment more than one plasma source, second plasma source 202 comprised and the corresponding feature of the feature of those first plasma sources 102 as herein described.For example, plasma source 202 comprises negative electrode 206, anode 208, gap 210, at least one plasma gas inlet 214, at least one transducer 216, outlet 218 and subtending board 222.By power supply 112 or power supply independently, provide and between negative electrode 206 and anode 208, generated the required voltage of electric arc.
In some instances, wish to handle object 160 equably with plasma.The characteristic (as coating film thickness, etching degree or activation) in the zone of being handled by individual plasma source (as the ETP source) presents the profile with Gaussian Profile characteristic usually around the axis of plasma source.When handling object 160, can make the Gaussian Profile of gained overlap by the position of setting each plasma source and strengthen uniformity with a plurality of plasma sources.The profile of these distributions with and width and highly partly depending on be used for handling the characteristic of the plasma of substrate.And the characteristic of each plasma depends on the various conditions that are used for producing plasma in each plasma source, as distance (gap 110) between cathode voltage, plasma air pressure and negative electrode and the anode.
In one embodiment, with respect to the various conditions and second plasma in the plasma chamber 204, the various conditions in first plasma chamber 104 (thereby first plasma that is produced by first plasma source 102) can be regulated, and vice versa.For example, by in plasma air pressure, cathode voltage and the gap 110,210 of first plasma source 102 and second plasma source 202 one of them is set to be equal to each other at least, can be with first plasma source 102 and second plasma source 202 " tuning ", so that eliminate or minimize difference between first plasma and second plasma.Then, during operation, use above-mentioned any device to regulate movably negative electrode 106,206, just can move adjustable negative electrode 106,206 (perhaps, being adjustable anode 108,208 in certain embodiments) from the input of transducer 116,216 by response gap 110 is remained identical value with gap 210.The basic plated film uniformly of profile that deposition on the big surface of planar substrates is had at least a selected characteristic, it is favourable that first plasma source 102 and second plasma source 202 are carried out this adjusting.
Opposite, can provide the unequal gap 110,210 of size that first plasma source 102 and second plasma source 202 are carried out " de-tuned " by moving adjustable negative electrode 106,206, mutually different first plasma and second plasma are provided thus.For example, it is de-tuned to wish to be used to handle the plasma of non-planar substrate.In these cases, the operating distance of first plasma source 102 (being the distance between plasma source and the substrate surface) can be different from the operating distance of second plasma source 202.Therefore, clash into the some place on the surface of object 160 at their, the characteristic of first plasma (being produced by first plasma source 102) will be different from the characteristic of second plasma (being produced by second plasma source 202).Can be by moving the difference that adjustable negative electrode 106,206 (perhaps being adjustable anode 108,208 in certain embodiments) provides the unequal gap 110,210 of size to compensate the operating distance of each plasma source, clash into first and second plasmas that the some place on the surface of object 160 has essentially identical characteristic separately to be created in them.
The characteristic of the plasma that first plasma source 102 produces also depends on the air pressure of the plasma gas in the plasma chamber 104 and the voltage (perhaps electromotive force) of negative electrode 106.Therefore, in the voltage of air pressure by regulating the plasma gas in the plasma chamber 104 and negative electrode 106 one of them also can control the characteristic of plasma at least.Can and regulate accordingly by at least one transducer 116 supervision plasma gas pressure.A kind of method of regulating plasma gas pressure is through plasma gas inlet 114 plasma gas flow that enter plasma chamber 104 by control.The device that control enters the plasma gas flow of plasma chamber 104 includes but not limited to needle-valve and mass flow controller.Similarly, can monitor cathode voltage (perhaps electromotive force) by above-mentioned at least one transducer 116, and regulate accordingly by regulating power supply 112.Be to be understood that, have among the embodiment of second plasma source 202 at these, in the air pressure that the plasma gas in the plasma chamber 204 is regulated in the input that is provided by above-mentioned at least one transducer 216 by response and the voltage of negative electrode 206 at least one of them, can control the characteristic of the plasma of second plasma source, 202 generations in a similar fashion.
In one embodiment, the present invention allow to regulate respectively with respect to the voltage of the air pressure of plasma gass in the plasma chamber 204 and negative electrode 206 in the voltage of the air pressure of plasma gass in the plasma chamber 104 and negative electrode 106 at least one of them.Therefore, can be with respect to condition in the plasma chamber 204 and first plasma of regulating the condition in first plasma chamber 104 and producing by second plasma of second plasma source, 202 generations by first plasma source 102, vice versa.For example, can carry out tuningly,, perhaps it be carried out " de-tuned ", so that above-mentioned two kinds of plasmas are different to eliminate or to minimize the difference between first plasma and second plasma to first plasma that produces by first plasma source.
Can by with in the plasma air pressure of first plasma source 102 and second plasma source 202 and the cathode voltage one of them is adjusted to be equal to each other and realizes the tuning of first plasma and second plasma at least.On the contrary, can by with in the plasma air pressure of first plasma source 102 and second plasma source 202 and the cathode voltage one of them is adjusted to different and first plasma and second plasma is de-tuned at least.The plasma air pressure that can monitor in the plasma chamber 104,204 by at least one transducer 116,216 respectively.Use above-mentioned control to enter the device of the plasma gas flow in each plasma chamber 104,204, the input that provides by above-mentioned at least one transducer 116,216 can be provided and regulate plasma air pressure in the plasma chamber 104,204 through plasma gas inlet 114,214.Similarly, can monitor the cathode voltage of negative electrode 106,206 respectively by above-mentioned at least one transducer 116,216, and these voltages be regulated accordingly by regulating power supply 112.
This " tuning " and the example of " de-tuned " of the plasma that produces by a plurality of plasma sources have been shown among Fig. 5.Therein, show Si as the function of suprabasil side locations (lateralposition)
xC
y: the profile of H film, and this film is to be deposited on suprabasil by vinyltrimethoxy silane (VTMS) is injected the plasma that is produced by a plurality of ETP source.The profile of this film is corresponding with some characteristics (such as but not limited to temperature, density, sectional area and reactant concentration) of the plasma that is used for depositing this film.The profile of the film that square among Fig. 5 obtained when being illustrated in two sources being detuned (promptly working) under different plasma air pressure and cathode voltage.Above-mentioned different plasma generation thickness of deposits change big a kind of profile.Rhombus among Fig. 5 represents to be tuned to when the air pressure in two sources and voltage the profile of the film that obtains when equating.The profile phase ratio that the plasma source that is detuned with use obtains, this moment, the profile of gained presented less variation.
Another aspect of the present invention provides a kind of surface and is provided with the object of one deck plated film at least, wherein, this at least one deck plated film generate by method operative installations as herein described 100 depositions.This at least one deck plated film be uniform substantially, and have on whole object surface the selected characteristic that changes less than 10%.The above-mentioned selected characteristic of this at least a plated film can be one of them in coating film thickness, abrasion resistance, ultraviolet radiation absorptivity, infrared radiation reflectivity, modulus, hardness, oxygen flow degree, permeable degree, adhesion, surface energy, pyroconductivity and the conductivity.Described at least a plated film can comprise the wet plated film of wear-resisting plated film, ultraviolet filtering plated film, infrared reflection plated film, resistance oxygen or resistance, antireflection plated film, conduction plated film, interlayer, adhesion layer or its combination.Described plated film and deposition process are at people's such as CharlesDominic Iacovangelo the United States Patent (USP) 6 that is entitled as " adhesion layer of metal oxide ultraviolet filter (Adhesion Layer for Metal Oxide UV Filters) ", 420,032, people's such as Barry Lee-Mean Yang name is called the United States Patent (USP) 6 of " multilayer object and the method for making by arc plasma deposition (Multilayer Article and Method of Making by ArcPlasma Deposition) ", 426,125, the name of Charles Dominic Iacovangelo is called the United States Patent (USP) 6 of " infrared reflection plated film (Infrared Reflecting Coatings) ", 261,694 and people's such as Steven Marc Gasworth name be called the United States Patent (USP) 6 of " layering object and manufacture method (Layered Article withImproved Microcrack Resistance and Method of Making) thereof " with improved prevention micro-crack characteristic, 376, be described in 064, by reference the full content of these documents be contained among this paper herein.
By following case description advantage of the present invention and notable feature:
Example 1
Use the array in expanding thermal plasma (ETP) source in the substrate of Merlon LEXAN , to deposit resistant silicone (SiO
xC
y) plated film.Each ETP source comprises adjustable negative electrode of the present invention.Equate that by being adjusted to of the air pressure that each plasma is indoor above-mentioned ETP plasma source is tuning.By with oxygen (O
2) and octamethylcy-clotetrasiloxane (D4) inject each ETP and form above-mentioned plated film.The plated film of gained has about 2 microns thickness.And change the resistance to wear that the Taber friction testing has been determined this plated film by 1000.Each Taber Delta haze value and substrate have been shown with respect to the functional relation between the position in each ETP source among Fig. 6.On whole large-area substrates, this plated film presents 2% even increase of haze value, and the standard deviation of this increase is 0.6%.
Although provided exemplary embodiments for the purpose of illustration, the description before should not thinking has limited scope of the present invention.Therefore, those skilled in the art can make various modifications, change and replacement, and are unlikely to deviate from scope and spirit of the present invention.
Claims (10)
1. device 100 that is used to produce controlled substantially plasma, described device 100 comprises:
A) at least one plasma source 102, described at least one plasma source 102 are included in the plasma chamber 104 that wherein produces described controlled substantially plasma; Be arranged at least one negative electrode 106 and an anode 108 in the described plasma chamber 104, described at least one negative electrode 106 and described anode 108 are separated by gap 110, described gap 110 scalable; Be connected to the power supply 112 of described anode and described at least one negative electrode 106, be used for applying voltage at described anode and described at least one negative electrode 106 two ends; The plasma gas inlet is used for plasma gas is introduced described plasma chamber 104 with plasma gas flow speed from plasma gas source; Transducer 116 is used to monitor the various conditions in the described plasma chamber 104; And
B) there is second Room 140 of fluid communication by exporting 118 with described plasma chamber 104, wherein, the air pressure of described second Room 140 remains second air pressure, described second air pressure is lower than first air pressure in the described plasma chamber 104, and wherein said controlled substantially plasma flows into described second Room 140 by described outlet 118 from described plasma chamber 104.
2. device 100 according to claim 1, wherein, described plasma source 102 is expanding thermal plasma sources 102.
3. plasma source 102 that is used to produce controlled substantially plasma, described plasma source 102 comprises:
A) produce the plasma chamber 104 of described controlled substantially plasma therein;
B) be arranged on the anode 108 of first end of described plasma chamber 104, described first end has outlet 118, and described controlled substantially plasma leaves described plasma chamber 104 by this outlet;
C) be arranged at least one adjustable negative electrode 106 in the described plasma chamber 104, wherein, described at least one adjustable negative electrode 106 can move, to form gap 110 between described anode 108 and described at least one adjustable negative electrode 106;
D) be connected to the power supply 112 of described anode 108 and described at least one adjustable negative electrode 106, be used for applying voltage at described anode 108 and described at least one adjustable negative electrode 106 two ends;
E) the plasma gas inlet is used for plasma gas is introduced described plasma chamber 104 with plasma gas flow speed from plasma gas source; And
F) at least one transducer 116 is used to detect and monitors various conditions in the described plasma chamber 104.
4. the device 100 of the controlled substantially expanding thermal plasma of a generation, described device 100 comprises:
A) at least one expanding thermal plasma source 102, described at least one expanding thermal plasma source 102 comprises: the plasma chamber 104 that produces described controlled substantially plasma therein; Anode 108; Be arranged at least one the adjustable negative electrode 106 in the described plasma chamber 104, wherein, described at least one adjustable negative electrode 106 can move, to form gap 110 between described anode 108 and described at least one adjustable negative electrode 106; Be connected to the power supply 112 of described anode 108 and described at least one adjustable negative electrode 106, be used for applying voltage at described anode 108 and described at least one adjustable negative electrode 106 two ends; The plasma gas inlet is used for plasma gas is introduced described plasma chamber 104 with plasma gas flow speed from the plasma (orifice) gas body source; And at least one transducer 116, be used to detect and monitor various conditions in the described plasma chamber 104; And
B) there is second Room 140 of fluid communication by exporting 118 with described plasma chamber 104, wherein, described second Room 140 remains second air pressure, described second air pressure is lower than first air pressure in the described plasma chamber 104, and wherein said controlled substantially plasma flows into described second Room 140 by described outlet 118 from described plasma chamber 104.
5. according to claim 1 or 4 described devices 100, wherein, described device 100 is to use described controlled substantially plasma object 160 surfaces to be carried out the device 100 of plasma treatment, and wherein said object 160 is arranged in described second Room 140, makes the described controlled substantially plasma that is produced by described at least one expanding thermal plasma source 102 leave described plasma chamber 104 and clash into described surface by described outlet.
6. according to claim 1 or 4 described devices 100, also comprise at least one reactant gas injector that is arranged in described second Room 140, described second Room is near the described outlet 118 in each described at least one expanding thermal plasma source 102, wherein, described reactant gas injector is introduced described controlled substantially plasma with reacting gas, and wherein said reacting gas and described controlled substantially plasma react, to form plated film on the surface of described object 160.
7. method that is used to produce controlled substantially plasma, described method comprises the steps:
A) provide at least one plasma source 102, described at least one plasma source 102 comprises: plasma chamber 104; Anode 108; Be arranged at least one the adjustable negative electrode 106 in the described plasma chamber 104; Be connected to the power supply 112 of described anode 108 and described at least one adjustable negative electrode 106; The plasma gas inlet; And at least one transducer 116;
B) plasma gas is offered the described plasma chamber 104 of each plasma source in described at least one plasma source 102 by described plasma gas inlet;
C) in described plasma chamber 104, produce plasma;
D) at least one parameter in the described plasma chamber 104 of supervision; And
E) control described plasma, wherein,, control described plasma by the various conditions of regulating in the described plasma chamber 104 according to supervision to described at least one parameter.
8. method of object 160 being handled with controlled substantially expanding thermal plasma said method comprising the steps of:
A) provide at least one expanding thermal plasma source 102, wherein, described at least one expanding thermal plasma source 102 comprises: plasma chamber 104; Anode 108; Be arranged at least one the adjustable negative electrode 106 in the described plasma chamber; Be connected to the power supply 112 of described anode 108 and described at least one adjustable negative electrode 106; The plasma gas inlet; And at least one transducer 116;
B) plasma gas is offered the described plasma chamber 104 of each plasma source in described at least one expanding thermal plasma source 102 by described plasma gas inlet;
C) in described plasma chamber 104, produce plasma;
D) at least one parameter in the described plasma chamber 104 of supervision; And
E) control described plasma, wherein,, control described plasma by the various conditions of regulating in the described plasma chamber 104 according to supervision to described at least one parameter;
F) by making described plasma expand to enter and exist second Room 140 of fluid communication to form expanding thermal plasma with described plasma chamber 104 through exporting 118, wherein, described second Room 140 comprises described object 160 and remains second air pressure, and described second air pressure is lower than first air pressure in the described plasma chamber 104; And
G) handle described object 160 thus on the surface that makes described expanding thermal plasma clash into described object 160.
9. according to claim 7 or 8 described methods, wherein, the step of described control plasma comprises mobile described at least one adjustable negative electrode 106 and described anode 108, to form gap 110 between described anode 108 and described at least one adjustable negative electrode 106.
10. one kind has the object 160 that is arranged on its lip-deep plated film of one deck at least, wherein, the described plated film of one deck at least is uniform substantially, and has an a certain selected characteristic, the variation that this characteristic presents on the surface of whole object 160 is less than about 10%, as follows and with described coated film deposition on described surface:
A) provide at least one expanding thermal plasma source 102, wherein said at least one expanding thermal plasma source 102 comprises: plasma chamber 104; Anode 108; Be arranged at least one the adjustable negative electrode 106 in the described plasma chamber; Be connected to the power supply 112 of described anode 108 and described at least one adjustable negative electrode 106; The plasma gas inlet; And at least one transducer 116;
B) plasma gas is offered the described plasma chamber 104 of each plasma source in described at least one expanding thermal plasma source 102 by described plasma gas inlet;
C) in described plasma chamber 104, produce plasma;
D) at least one parameter in the described plasma chamber 104 of supervision;
E) control described plasma, wherein,, control described plasma by the various conditions of regulating in the described plasma chamber 104 according to supervision to described at least one parameter;
F) by making described plasma expand to enter and exist second Room 140 of fluid communication to form expanding thermal plasma with described plasma chamber 104 through exporting 11 8, wherein, described second Room 140 comprises described object 160 and remains second air pressure, and described second air pressure is lower than first air pressure in the described plasma chamber 104;
G) at least a reacting gas is injected described expanding thermal plasma; And
H) deposition plating on the surface of described object 160.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2004/016785 WO2005119791A1 (en) | 2004-05-27 | 2004-05-27 | Vertical color filter sensor group with carrier-collector elements |
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| CN1943002A true CN1943002A (en) | 2007-04-04 |
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| CNA2004800428396A Pending CN1943002A (en) | 2004-05-27 | 2004-03-01 | Apparatus and method for plasma treating article |
| CNA2004800428377A Pending CN1943042A (en) | 2004-05-27 | 2004-05-27 | Vertical color filter sensor group with carrier-collector elements |
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| CNA2004800428377A Pending CN1943042A (en) | 2004-05-27 | 2004-05-27 | Vertical color filter sensor group with carrier-collector elements |
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| JP (1) | JP2008500725A (en) |
| CN (2) | CN1943002A (en) |
| WO (1) | WO2005119791A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123843B (en) * | 2006-08-10 | 2012-06-27 | 细美事有限公司 | Plasma generator, base material processing device comprising same and base material processing method |
| CN103262219A (en) * | 2010-12-03 | 2013-08-21 | 赢创德固赛有限公司 | Method for the hydrogen passivation of semiconductor layers |
| CN103890898A (en) * | 2011-07-29 | 2014-06-25 | 法雷奥照明公司 | Tool and process for treating an object by plasma generators |
| CN112911780A (en) * | 2019-11-19 | 2021-06-04 | 核工业西南物理研究院 | Cascade plasma generator |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5151145B2 (en) | 2006-12-26 | 2013-02-27 | ソニー株式会社 | Switch circuit, variable capacitor circuit and its IC |
| US8054355B2 (en) * | 2008-10-16 | 2011-11-08 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
| JP4900404B2 (en) | 2009-02-23 | 2012-03-21 | ソニー株式会社 | Solid-state imaging device and driving method thereof |
| US9392166B2 (en) | 2013-10-30 | 2016-07-12 | Samsung Electronics Co., Ltd. | Super-resolution in processing images such as from multi-layer sensors |
| JP6260354B2 (en) * | 2014-03-04 | 2018-01-17 | 株式会社リコー | Imaging device, adjustment device, and adjustment method |
| DE102015109549A1 (en) * | 2014-06-25 | 2015-12-31 | Ford Global Technologies, Llc | Proximity switch assembly with a groove between adjacent proximity sensors |
| CN105467638A (en) * | 2016-01-08 | 2016-04-06 | 豪威半导体（上海）有限责任公司 | LCOS structure and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3220302B2 (en) * | 1993-09-01 | 2001-10-22 | 株式会社東芝 | Solid-state imaging device |
| US5965875A (en) * | 1998-04-24 | 1999-10-12 | Foveon, Inc. | Color separation in an active pixel cell imaging array using a triple-well structure |
| US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
| US6864557B2 (en) * | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
| US7154157B2 (en) * | 2002-12-30 | 2006-12-26 | Intel Corporation | Stacked semiconductor radiation sensors having color component and infrared sensing capability |
-
2004
- 2004-03-01 CN CNA2004800428396A patent/CN1943002A/en active Pending
- 2004-05-27 CN CNA2004800428377A patent/CN1943042A/en active Pending
- 2004-05-27 WO PCT/US2004/016785 patent/WO2005119791A1/en active Application Filing
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123843B (en) * | 2006-08-10 | 2012-06-27 | 细美事有限公司 | Plasma generator, base material processing device comprising same and base material processing method |
| CN103262219A (en) * | 2010-12-03 | 2013-08-21 | 赢创德固赛有限公司 | Method for the hydrogen passivation of semiconductor layers |
| CN103890898A (en) * | 2011-07-29 | 2014-06-25 | 法雷奥照明公司 | Tool and process for treating an object by plasma generators |
| CN112911780A (en) * | 2019-11-19 | 2021-06-04 | 核工业西南物理研究院 | Cascade plasma generator |
Also Published As
| Publication number | Publication date |
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| WO2005119791A1 (en) | 2005-12-15 |
| JP2008500725A (en) | 2008-01-10 |
| CN1943042A (en) | 2007-04-04 |
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