CN1937245A - In-line inserted semiconductor device - Google Patents
In-line inserted semiconductor device Download PDFInfo
- Publication number
- CN1937245A CN1937245A CN 200610032431 CN200610032431A CN1937245A CN 1937245 A CN1937245 A CN 1937245A CN 200610032431 CN200610032431 CN 200610032431 CN 200610032431 A CN200610032431 A CN 200610032431A CN 1937245 A CN1937245 A CN 1937245A
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- Prior art keywords
- negative electrode
- gate electrode
- housing
- semiconductor device
- negative
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- Thyristors (AREA)
- Power Conversion In General (AREA)
Abstract
The disclosed semiconductor device includes a shell body, anode, cathode, gate electrode, and negative electron. The anode and cathode are located at two ends of the shell body. One end of the gate electrode and the negative electron is located between anode and cathode, and the other end is positioned on outside the shell body after being led-out from inside the shell so as to form a plug. Under condition of connection in low inductance, the disclosed semiconductor device possesses features of simple compact structure, compact interface, and easy of assemblage.
Description
Technical field
The present invention is mainly concerned with the power semiconductor device field, refers in particular to a kind of in-line inserted semiconductor device.
Background technology
In the prior art, semiconductor device (such as: integrated gate commutated thyristor, IGCT) include shell, anode, negative electrode, gate electrode and negative electrode, gate electrode and negative electrode one end are packaged in the shell, after the other end is drawn from shell, are arranged in the outside of shell ringwise, around shell, offer several installing holes on gate electrode and the negative electrode, by several screws of screwing on semiconductor device is connected with the gating circuit plate, gate electrode and negative electrode lay respectively at the both sides of gating circuit plate.This structure has the following disadvantages: 1, structure is complicated, and is higher to the processing request of housing, gate electrode and negative electrode; Because gate electrode and negative electrode generally adopt disc-shaped design, so structure material is more, cost is higher; 2, gate electrode is complicated with being connected of gating circuit plate with negative electrode, and the assembler need tighten several screws on all directions of disk one by one, brings difficulty to dismounting.
Summary of the invention
The technical problem to be solved in the present invention just is: at the technical problem that prior art exists, the invention provides a kind of hanging down in assurance and feel under the condition that connects in-line inserted semiconductor device simple and compact for structure, that interface is succinct, easy to assembly.
For solving the problems of the technologies described above, the solution that the present invention proposes is: a kind of in-line inserted semiconductor device, it comprises housing, anode, negative electrode, gate electrode and negative electrode, described anode and negative electrode lay respectively at the two ends of housing, it is characterized in that: an end of described gate electrode and negative electrode is between housing inner anode and negative electrode, and the outside that is arranged in housing after the other end is drawn in the housing forms plug.
One end of described gate electrode and negative electrode is drawn the back in the housing and is extended to form plug towards the cathode terminal bending.
Described gate electrode and negative electrode are set around the outside of housing ringwise, and are divided into several gate electrode sheets and negative electricity pole piece by the covering of the fan of dividing equally, and gate electrode sheet and negative electricity pole piece are staggered and extend to form the plug of sheet towards cathode terminal bending.
Described gate electrode and negative electrode are set around the outside of housing ringwise, and are divided into several gate electrode sheets and negative electricity pole piece by the covering of the fan of dividing equally, and gate electrode sheet and negative electricity pole piece are staggered and extend to form the plug of needle-like towards cathode terminal bending.
Compared with prior art, advantage of the present invention just is:
1, employing plug-type design in the in-line inserted semiconductor device of the present invention directly is plugged on door, negative electrode with the gating circuit plate, simple for structure, compact, has reduced the difficulty of processing of shell, gate electrode and negative electrode, and cost reduces, and is easy for installation; Taking gating circuit plate area when having reduced gate electrode simultaneously and linking to each other with the gating circuit plate with negative electrode, help the design of gating circuit plate, compact structure can reduce the stray inductance value between the door negative electrode, helps diagnosis and maintenance to gating circuit plate and semiconductor device;
2, the gate electrode of in-line inserted semiconductor device of the present invention and negative electrode are when being connected with the gating circuit plate, only the plug that need form on gate electrode and the negative electrode inserts on the socket corresponding with it on the gating circuit plate and can form semiconductor subassembly, assemble very conveniently, can also improve the element installation strength effectively.
Description of drawings
Fig. 1 is a perspective view of the present invention;
Fig. 2 is a plan structure schematic diagram of the present invention;
Fig. 3 is a main TV structure schematic diagram of the present invention;
Fig. 4 is the connection diagram of the present invention and gating circuit plate.
Marginal data
1, housing 11, anode
12, negative electrode 2, gate electrode
21, gate electrode sheet 3, negative electrode
31, negative electricity pole piece 4, gating circuit plate
41, socket 5, plug
Embodiment
Below with reference to the drawings and specific embodiments the present invention is described in further details.
As Fig. 1, Fig. 2 and shown in Figure 3, in-line inserted semiconductor device of the present invention, it comprises housing 1, anode 11, negative electrode 12, gate electrode 2 and negative electrode 3, anode 11 and negative electrode 12 lay respectively at the two ends of housing 1, one end of gate electrode 2 and negative electrode 3 is between housing 1 inner anode 11 and negative electrode 12, and the outside that is arranged in housing 1 after the other end is drawn in the housing 1 forms plug 5.In the present embodiment, this housing 1 is cylindric, can adopt pottery or other materials to make.The upper and lower end face of housing 1 is respectively equipped with anode 11 and the negative electrode 12 that adapts with housing 1 outer face, realizes being electrically connected of semiconductor device of the present invention and other devices by anode 11 and negative electrode 12.One end of gate electrode 2 and negative electrode 3 is drawn the back in the housing 1 and is extended to form towards the bending of negative electrode 12 ends and insert 5, gate electrode 2 and negative electrode 3 are set around the outside of housing 1 ringwise in the present embodiment, and be divided into several gate electrode sheets 21 and negative electricity pole piece 31 by the covering of the fan of dividing equally, gate electrode sheet 21 and negative electricity pole piece 31 are staggered and extend to form the plug 5 of sheet or needle-like towards negative electrode 12 ends bendings, gating circuit plate 4 is provided with the socket 41 corresponding with this plug 5, according to actual needs, the user can select to adopt the plug 5 of sheet, needle-like or other shapes.Referring to shown in Figure 4, during installation, housing 1 is placed in the installing hole on the gating circuit plate 4, generally be to rely on the support of negative electrode 12 to be suspended in the installation site (installing hole) of gating circuit plate 4, the gate electrode sheet 21 and the negative electricity pole piece 31 that form male blade 5 are inserted set socket 41 on the gating circuit plate 4, can finish being connected of semiconductor device of the present invention and gating circuit plate 4, form semiconductor subassembly, install very convenient.
Claims (4)
1, a kind of in-line inserted semiconductor device, it comprises housing (1), anode (11), negative electrode (12), gate electrode (2) and negative electrode (3), described anode (11) and negative electrode (12) lay respectively at the two ends of housing (1), it is characterized in that: an end of described gate electrode (2) and negative electrode (3) is positioned between housing (1) inner anode (11) and the negative electrode (12), and the outside that is arranged in housing (1) after the other end is drawn in the housing (1) forms plug (5).
2, in-line inserted semiconductor device according to claim 1 is characterized in that: an end of described gate electrode (2) and negative electrode (3) is drawn the back in the housing (1) and is extended to form plug (5) towards the bending of negative electrode (12) end.
3, in-line inserted semiconductor device according to claim 1 and 2, it is characterized in that: described gate electrode (2) and negative electrode (3) are set around the outside of housing (1) ringwise, and being divided into several gate electrode sheets (21) and negative electricity pole piece (31) by the covering of the fan of dividing equally, gate electrode sheet (21) and negative electricity pole piece (31) are staggered and extend to form the plug (5) of sheet towards the bending of negative electrode (12) end.
4, in-line inserted semiconductor device according to claim 1 and 2, it is characterized in that: described gate electrode (2) and negative electrode (3) are set around the outside of housing (1) ringwise, and being divided into several gate electrode sheets (21) and negative electricity pole piece (31) by the covering of the fan of dividing equally, gate electrode sheet (21) and negative electricity pole piece (31) are staggered and extend to form the plug (5) of needle-like towards the bending of negative electrode (12) end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100324311A CN100426523C (en) | 2006-10-20 | 2006-10-20 | In-line inserted semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100324311A CN100426523C (en) | 2006-10-20 | 2006-10-20 | In-line inserted semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1937245A true CN1937245A (en) | 2007-03-28 |
| CN100426523C CN100426523C (en) | 2008-10-15 |
Family
ID=37954633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100324311A Active CN100426523C (en) | 2006-10-20 | 2006-10-20 | In-line inserted semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100426523C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545753A (en) * | 2018-10-10 | 2019-03-29 | 西安理工大学 | A kind of encapsulating structure crimping double-core GCT |
| CN111681995A (en) * | 2020-04-29 | 2020-09-18 | 株洲中车时代半导体有限公司 | Thyristor element, thyristor element assembly structure and soft starter |
| CN112067920A (en) * | 2020-08-06 | 2020-12-11 | 清华大学 | Power semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2956363B2 (en) * | 1992-07-24 | 1999-10-04 | 富士電機株式会社 | Power semiconductor device |
| EP1298733A1 (en) * | 2001-09-28 | 2003-04-02 | ABB Schweiz AG | Turn-off high-power semiconductor device |
| CN200965883Y (en) * | 2006-10-20 | 2007-10-24 | 株洲南车时代电气股份有限公司 | In-line plug-in type semiconductor device |
-
2006
- 2006-10-20 CN CNB2006100324311A patent/CN100426523C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545753A (en) * | 2018-10-10 | 2019-03-29 | 西安理工大学 | A kind of encapsulating structure crimping double-core GCT |
| CN111681995A (en) * | 2020-04-29 | 2020-09-18 | 株洲中车时代半导体有限公司 | Thyristor element, thyristor element assembly structure and soft starter |
| CN112067920A (en) * | 2020-08-06 | 2020-12-11 | 清华大学 | Power semiconductor device |
| CN112067920B (en) * | 2020-08-06 | 2022-02-25 | 清华大学 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100426523C (en) | 2008-10-15 |
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: 412000 Hunan Province, Zhuzhou Shifeng District Tian Xin North Gate Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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Effective date of registration: 20201012 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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| TR01 | Transfer of patent right |