CN1937219A - Electromagnetic noise suppressor, semiconductor device using the same, and method of manufacturing the same - Google Patents
Electromagnetic noise suppressor, semiconductor device using the same, and method of manufacturing the same Download PDFInfo
- Publication number
- CN1937219A CN1937219A CN 200610136213 CN200610136213A CN1937219A CN 1937219 A CN1937219 A CN 1937219A CN 200610136213 CN200610136213 CN 200610136213 CN 200610136213 A CN200610136213 A CN 200610136213A CN 1937219 A CN1937219 A CN 1937219A
- Authority
- CN
- China
- Prior art keywords
- electromagnetic noise
- width
- soft magnetic
- magnetic film
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
In a semiconductor bare chip (57) on the front surface whereof is formed an integrated circuit, a magnetic loss film 55 is formed on the back surface of that semiconductor bare chip.
Description
The present patent application is to be that April 4 calendar year 2001, application number are that of 01119032.9 patent application of the same name divides an application the applying date.
Technical field
The present invention relates to Semiconductor substrate, this substrate is used for process industry and various semiconductor device used in everyday, and relate to the semiconductor wafer that is formed with integrated circuit on semiconductor bare chip and its surface, particularly relate to the electro-magnetic wave absorption Semiconductor substrate and the manufacture method thereof of noise suppressed, and the semiconductor device that uses this Semiconductor substrate to make.
The invention still further relates to the electromagnetic noise that presents outstanding high-frequency electromagnetic noise suppression effect and suppress body, particularly relate to the electromagnetic noise that can effectively suppress electromagnetic noise and suppress body, this electromagnetic noise is debatable to the active device that is operated in high speed or high-frequency electron device and electronic equipment, and relates to the high-frequency electromagnetic noise suppressing method that uses this inhibition body
Background technology
The integrated semiconductor device of the height of high speed operation is developed significantly in recent years.Example comprises random-access memory (ram), read-only memory (ROM), microprocessor (MPU), central processing unit (CPU), image processing arithmetic and logical unit (IPALU), reaches other logic circuit apparatus.In these active devices, aspect computational speed and conversion speed, realized higher speed with surprising speed, the signal of telecommunication that transmits by high speed electronics becomes the main cause of induction and high-frequency noise, and this is because related therewith quick voltage and electric current variation.
Simultaneously, for electronic device and electronic equipment, in the sustainable development and not weakening apace of the trend aspect lighter weight, thinner profile and the littler size.With this trend correlation, integrated level that realizes in semiconductor device and the higher electronic component packing density of realizing in the printed conductor substrate also are significant.Therefore, electronic device and holding wire excessively integrated thick and fast or that install become very close each other, and present case is such, and is relevant with the higher conversion speed of realizing, as previous explanation, cause high frequency parasitic radiation noise easily.
For traditional Semiconductor substrate, do not implement anti-noise measure at substrate itself.Therefore, after the semiconductor device manufacturing, when the semiconductor device circuit graph area produced noise, the noise former state leaked into the outside, sometimes other device or equipment in cause operate miss.
Since it is so, aspect the anti-noise measure that is used for semiconductor device the back side to each single semiconductor device apply electromagnetic wave absorbent material or analog, form additional electromagnetic wave absorbing layer.
Yet, for so traditional semiconductor device anti-noise measure, there are the following problems, must apply noise absorbing material, for example electromagnetic wave absorbent material in the back to each single semiconductor device in subsequent handling, therefore needs a large amount of time in implementing anti-noise measure.And because be applied to the back of each single semiconductor device, so the thickness of noise absorption piece, for example electromagnetic wave absorbent material is easy to generate variation, the noise absorption characteristic of single semiconductor device also changes, and this also constitutes problem.
And just as is generally known,, obtaining to constitute the semiconductor bare chip of semiconductor device by the semiconductor wafer of cutting as Semiconductor substrate, its surface is gone up and is formed integrated circuit.
Pointed out and the relevant problem of parasitic radiation, this solution is provided, promptly in power line, inserted decoupling capacitor or other lumped constant element from the power line of this semiconductor bare chip.Also pointed out with electronics integrated device and wiring substrate in the relevant problem of parasitic radiation from the power line to the active device, this solution is equally provided, i.e. insertion decoupling capacitor or other lumped constant element in power line.
Yet in semiconductor bare chip, electronics integrated device and wiring substrate, its surface is gone up and is formed the integrated circuit that more speed is carried out, and the noise of generation comprises harmonic component, so signal path has presented the distributed constant characteristic.Situation about having occurred as a result, is to mean that the means of the prevention noise of traditional lumped constant circuit are invalid.
Therefore, need a kind of electromagnetic noise of exploitation to suppress body, to effectively moderately suppressing with this semiconductor device of high speed operation and the electromagnetic noise in the electronic circuit.More specifically, need exploitation to realize stoping the electromagnetic noise of electromagnetic noise to suppress body effectively with smaller size smaller.
Summary of the invention
The object of the present invention is to provide a kind of can the absorption effectively from the MHz frequency band to the electromagnetic Semiconductor substrate of the interference of GHz frequency band, when being divided into single semiconductor device, can present the electro-magnetic wave absorption effect, help the batch process of noise-inhibition semiconductor device, and manufacture method and wherein use the semiconductor device of those Semiconductor substrate.
Another object of the present invention is to provide a kind of semiconductor bare chip and semiconductor wafer, can reduce the parasitic radiation that produces from integrated circuit effectively, forms this integrated circuit with high speed operation on semiconductor bare chip and semiconductor wafer surface.
Another purpose of the present invention is to provide a kind of electromagnetic noise to suppress body, even when also using the conductive magnetic film that presents outstanding magnetic loss characteristic, can realize in the microelectronic circuit of for example semiconductor device inside that also the areflexia electromagnetic noise suppresses, and use these to suppress the electromagnetic noise inhibition method of body.
According to a scheme of the present invention, provide a kind of its surface to go up the semiconductor bare chip that forms integrated circuit.In the program of the present invention, on the dorsal part of semiconductor bare chip, form the magnetic loss film.
According to another aspect of the present invention, provide a kind of its surface to go up the semiconductor wafer that forms integrated circuit.In the program of the present invention, on the dorsal part of semiconductor wafer, form the magnetic loss film.
In accordance with yet a further aspect of the invention, provide a kind of Semiconductor substrate that forms the magnetic loss parts in its part.In the program of the present invention, these magnetic loss parts are formed on the near surface of a Semiconductor substrate by predetermined pattern.Magnetic loss parts and this lip-deep semiconductor substrate region are insulated film and cover equably.
According to another scheme of the present invention, a kind of Semiconductor substrate is provided, combining by the first Semiconductor substrate parts and the second Semiconductor substrate parts forms, and is formed with the magnetic loss parts in its part.In the program of the present invention, in the first Semiconductor substrate parts and the second Semiconductor substrate parts, at least one or another Semiconductor substrate parts are provided with groove, and groove is formed on the surface of a side that combines, and wherein these magnetic loss parts embed this groove.
According to further scheme of the present invention, a kind of Semiconductor substrate manufacture method is provided, comprise cambial technology, this layer comprises the magnetic loss parts at least a portion of this Semiconductor substrate.
According to another aspect of the present invention, provide a kind of electromagnetic noise to suppress body, this inhibition body comprises a kind of conduction soft magnetic film, has a kind of structure, and wherein fine to be divided into respect to the electromagnetic noise wavelength be enough little formation unit to this soft magnetic film.Be interrupted in these direct current conduction that constitute between the unit.
According to a scheme more of the present invention, a kind of electromagnetic noise inhibition method is provided, suppress body, the electromagnetic noise that suppresses to conduct by directly over microstrip line or signal transmssion line analog, forming above-mentioned electromagnetic noise.
According to another aspect of the present invention, provide a kind of electromagnetic noise that is used to the electromagnetic noise that suppresses to conduct to suppress body, near the conduction soft magnetic film that forms being included in directly over microstrip line or the signal transmssion line analog.In the program of the present invention, the shape of conduction soft magnetic film is such, and its width equals or be narrower than the line width of this microstrip line or signal transmssion line analog substantially.
According to another aspect of the present invention, a kind of noise suppressing method of conduction is provided, be used for suppressing body control Conducted Electromagnetic noise by forming a kind of electromagnetic noise, this electromagnetic noise suppresses near the conduction soft magnetic film that body forms being included in directly over microstrip line or the signal transmssion line analog.In the program of the present invention, the shape of conduction soft magnetic film is such, and its width equals or be narrower than the line width of this microstrip line or signal transmssion line analog substantially.
Description of drawings
Figure 1A is the plane graph of traditional semiconductor wafer.
Figure 1B is the enlarged drawing of irising out part among Figure 1A.
Fig. 1 C is the profile that dissects along the line IC-IC among Figure 1B.
Fig. 2 A is the general layout of traditional Semiconductor substrate.
Fig. 2 B is the profile along the line IIB-IIB among Fig. 2 A.
Fig. 3 A is that traditional Semiconductor substrate is passed through the plane graph of the various semiconductor fabrication process final form of Semiconductor substrate afterwards.
Fig. 3 B is the profile along the line IIIB-IIIB among the figure A.
Fig. 4 A is a common perspective view of cutting apart a semiconductor device of finishing after traditional Semiconductor substrate.
Fig. 4 B is the profile along the line IVB-IVB among Fig. 4 A.
Fig. 5 A arranges common perspective view after revolving in protection against noise, is provided for illustrating a kind of example of the anti-noise measure in traditional semiconductor device.
Fig. 5 B is the profile along the line VB-VB among Fig. 5 A.
Fig. 6 A is the plane graph of the semiconductor wafer in the one embodiment of the invention.
Fig. 6 B is the enlarged drawing of irising out part among Fig. 6 A.
Fig. 6 C is the profile that dissects along the line VIB-VIB among Fig. 6 B.
Fig. 7 is to use the generalized section of the sample manufacturing equipment of sputtering method.
Fig. 8 is the magnetic loss coefficient μ as the sample 1 of magnetic loss film " with the curve chart of an example of frequency dependence.
Fig. 9 is used to observe the perspective view of measuring system that is suppressed the inhibition effect of body by the high-frequency current of forming as the sample 1 of magnetic loss film.
Figure 10 is the frequency response curve as the transmission characteristic (S21) of the sample 1 of magnetic loss film.
Figure 11 is the equivalent circuit diagram as the magnet of magnetic loss film.
Figure 12 is the frequency response curve from the resistance value R that calculates as the transmission characteristic (S21) of the sample 1 of magnetic loss film.
Figure 13 A is the plane graph according to the Semiconductor substrate of first embodiment of the invention.
Figure 13 B is the profile along the line XIIIB-XIIIB among Figure 13 A.
Figure 14 A is the figure of explanation according to half conductive substrate manufacture method of first embodiment of the invention, and the state of expression is to form the magnetic loss parts on all surfaces of silicon substrate.
The state that Figure 14 B represents is to form the photoresist figure on the magnetic loss component layer of the Semiconductor substrate shown in Figure 14 A.
The state that Figure 14 C represents is to have formed the magnetic loss parts 2 with predetermined pattern, and these magnetic loss parts only exist only in those positions of the magnetic loss parts photoresist figure retention of the interpolation of operation shown in Figure 14 B.
The state that Figure 14 D represents is to form on the surface of magnetic loss parts 2 to cover insulation film in operation shown in Figure 14 C.
Figure 15 A is the plane graph according to the Semiconductor substrate of second embodiment of the invention.
Figure 15 B is the profile along the line XVB-XVB among Figure 15 A.
Figure 16 A is the figure of explanation according to the manufacture method of the Semiconductor substrate of second embodiment of the invention, and the state of expression is to form the silicon dioxide figure on first silicon substrate, and dry etching is carried out at the silicon position that exposes.
The state that Figure 16 B represents is the groove 41 that forms desired depth L1 in the Semiconductor substrate shown in Figure 16 A.
The state that Figure 16 C represents is from state shown in Figure 16 B, to remove silicon dioxide and exposure and have the surface of silicon substrate of groove.
Figure 16 D represents that state is, forms the magnetic loss component layer on all surfaces of one side of substrate shown in Figure 16 C.
The state that Figure 16 E represents is, a side is carried out polishing, exposes the magnetic loss parts within surface of silicon and the groove.
The state that Figure 16 F represents is, with prepare second silicon substrate immediately before first silicon substrate combines.
The state that Figure 16 G represents is first silicon substrate and the combination of second silicon substrate.
Figure 17 A is the profile perspective view according to the semiconductor device of third embodiment of the invention.
Figure 17 B is the profile along the line XVIIB-XVIIB among Figure 17 A.
Figure 18 is the figure of the sample of the explanation electromagnetic noise that is used to estimate the embodiment of the invention.
Figure 19 is the figure of electromagnetic noise evaluation system.
Figure 20 shows the curve chart that suppresses the electromagnetic noise inhibition effect of body sample according to the electromagnetic noise of the embodiment of the invention, is the curve values at reflection characteristic (S11).
Figure 21 shows the curve chart that suppresses the electromagnetic noise inhibition effect of body sample according to the electromagnetic noise of the embodiment of the invention, is the curve values at reflection characteristic (S21).
Figure 22 is the figure that the electromagnetic noise of the explanation embodiment of the invention suppresses the sample of body.
Figure 23 is the structural representation that the electromagnetic noise that is used for the embodiment of the invention suppresses the Conducted Electromagnetic noise rating system of body.
Figure 24 shows the curve chart that suppresses the electromagnetic noise inhibition effect of body sample according to the electromagnetic noise of the embodiment of the invention, is the curve at reflection characteristic (S11).
Figure 25 shows the curve chart that suppresses the electromagnetic noise inhibition effect of body sample according to the electromagnetic noise of the embodiment of the invention, is the curve at reflection characteristic (S21).
Embodiment
At first, before the explanation embodiment of the invention, for the ease of understanding the present invention, with reference to the semiconductor wafer of figure 1-5 explanation prior art.
With reference to Figure 1A, 1B and 1C, for example use known usually wafer fabrication to make semiconductor bare chip.Semiconductor wafer 27 has a plurality of chip wafers 29, is formed with the integrated circuit (not shown) on the surface of each wafer, and each wafer is formed with chip electrode 31 (electrode pad) in the above.Shown in chip electrode 31 form along the outer circumferential edges of chip wafer 29, but chip electrode 31 can be formed in the active area.Aluminium alloy is used as the metal that forms chip electrode usually.Semiconductor wafer 27 also comprises passivating film 33.More particularly, all surfaces of semiconductor wafer 27 is passivated film 33 coverings.Passivating film 33 for example is made up of polyimides, silicon nitride film or silica membrane, use be for example spin coating of known method.The thickness of passivating film 33 should be below the 20 μ m.Form after the passivating film 33,, make chip electrode 31 be exposed to atmosphere by exposing and corrosion semiconductor wafer 27.As a result, except being formed with those positions of chip electrode 31, passivating film 33 will cover all surfaces of semiconductor wafer 27.Along groove 35 chip wafer 29 is divided into single semiconductor bare chip mutually then.Dicing method by known usually use scribing machine is finished separation.These chip wafers 29 are semiconductor bare chips 37.
Referring to Fig. 2 A and 2B, Semiconductor substrate 39 has silicon as its stock, here shown in Semiconductor substrate be in the process for fabrication of semiconductor device initial condition.By making Semiconductor substrate 39 through a variety of commonly known semiconductor fabrication process, obtain Semiconductor substrate shown in Fig. 3 A and the 3B, be formed with the single semiconductor device circuit figure of previous explanation thereon.
Referring to Fig. 3 A and 3B, the single circuitous pattern zone 4A in the Semiconductor substrate 39 is corresponding to the funtion part of several semiconductor device.By comprise they separately the single semiconductor device in circuitous pattern zone 41 make several semiconductor device from Semiconductor substrate 39 cutting.
Referring to Fig. 4,, do not implement anti-noise measure at its substrate itself for traditional Semiconductor substrate 39.Therefore, after making semiconductor device 43,, then leak into to this noise former state the outside, in other devices or equipment, cause misoperation sometimes if produce noise from the circuitous pattern district 45 of semiconductor device 43.
Referring to Fig. 5 A and 5B, aspect the anti-noise measure that is used for semiconductor device the back side to each single semiconductor device apply electromagnetic wave absorbent material or analog, form additional electromagnetic wave absorbing layer.For semiconductor device 47 shown in Fig. 5 A and the 5B, after Semiconductor substrate is cut apart single semiconductor device, electromagnetic wave absorbent material 49 has been applied to the dorsal part of this semiconductor 47, promptly do not forming on this side surface in circuitous pattern zone 45 or on the similar surfaces, forming additional electromagnetic wave absorbing layer.
Yet there is following problem for the anti-noise measure in these traditional semiconductor device 47, in subsequent treatment the back side of each semiconductor device 47 being applied the noise absorption piece is electromagnetic wave absorbent material 49, realizes that anti-noise measure needs a large amount of time.And, because be applied to the back of each single semiconductor device,, the noise absorption piece is easy to generate variation so being the thickness of electromagnetic wave absorbent material 49, and the noise absorption characteristic of single semiconductor device also changes, and this is another problem.
Below provide brief history of the present invention.
The inventor has invented the built-up magnet that presents big magnetic loss at high frequency previously, and has found its method, by form this built-up magnet near the parasitic radiation source, suppresses effectively from the parasitic radiation of above-mentioned semiconductor device and electronic circuit generation.Known from the research that the mechanism of action that uses the radiation of this magnetic loss attenuation of parasitic is carried out recently, be owing to give the equivalent resistance element to the electronic circuit that constitutes the parasitic radiation source.Here, equivalent resistance depends on the magnet magnetic loss coefficient μ that the imaginary part by complex permeability provides ".More particularly, be equivalent to insert the resistance value of the resistive element in the electronic circuit, when the area of magnet is constant, substantially with μ " and the thickness of magnet be directly proportional.Therefore, for the parasitic radiation decay that obtains with less or thinner magnet to require, big μ " be essential.For example, for than the zonule, for example use the magnetic loss body to implement to stop the measure of parasitic radiation at the semiconductor device mould inside, greatly the magnetic loss coefficient value is essential, is therefore seeking the μ that it has " significantly greater than the magnet of traditional magnetic loss material.Made the present invention in light of this situation.
And, the inventor is in the process of using sputter or vapor deposition method research soft magnetic material, notice the outstanding magnetic permeability of granular magnet, wherein trickle magnetic metal particle is evenly dispersed in nonmagnetic material for example in the pottery, studies to the microstructure of magnetic metal particle with around their nonmagnetic material.As a result, the inventor finds when the magnetic metal particle concentration in the granular magnet within the specific limits the time, obtains the magnetic loss characteristic of giving prominence at high-frequency region.Up to now the granular magnet with M-X-Y constituent has been carried out many researchs, wherein M is the magnetic metal element, and Y is O, N or F, and X is the element except M or Y, and known these are low-loss and present big saturation magnetization.In the granular magnet of these M-X-Y, the size of saturation magnetization depends on the volume ratio of being calculated by the M composition.Therefore, the M components in proportions must be high, so that obtain big saturation magnetization.Therefore, for example be used as magnetic core in high-frequency inductor device or the transformer etc. for common application, the M components in proportions is limited to such scope in the granular magnet of M-X-Y, promptly its saturation magnetization be substantially only by M become saturation magnetization that the reguline metal magnet be grouped into can realize 80% or more than.
The inventor has studied the M component ratio in the granular magnet with M-X-Y constituent, wherein M is the magnetic metal element, Y is O, N both or F, X is the element except M or Y, the result is finding for each constituent system in the scope widely, when within the particular concentration scope, having magnetic metal M, present big magnetic loss at high-frequency region, thereby finished the present invention.
The highest region territory, wherein the saturation magnetization that presents of M composition be the reguline metal magnet that only becomes to be grouped into by M saturation magnetization 80% or more than, be in the granular magnet areas of the low-loss M-X-Y of high saturation, it has been studied certain hour widely.Material in this zone is used for the high frequency miniature magnetic device, for example above-mentioned inductor in high frequency, because two values of real part magnetic permeability (μ ') and saturation magnetization all are big, what still influence resistance is little by X-Y composition proportion, so resistivity still is little.Therefore, when the film thickness attenuation, the generation of the eddy current loss in high frequency magnetic permeability and the high-frequency region is together with the ground deterioration, so these materials are not suitable for for example suppressing the thicker magnetic film that noise is used.The saturation magnetization that presents in this zone of M component ratio be the reguline metal magnet that only constitutes by the M composition saturation magnetization 80% or following, more than 60%, resistivity is bigger, is 100 μ Ω cm or bigger basically.Therefore, even this material thickness at the order of magnitude of a few μ m, will be because natural resonance because the loss that eddy current causes also is little, nearly all magnetic loss.Therefore, for magnetic loss coefficient μ " the frequency dispersion width will narrow down, therefore this material is suitable for the anti-noise measure of narrowband frequency range.This regional saturation magnetization of M component ratio be the reguline metal magnet that only becomes to be grouped into by M saturation magnetization 60% or following, 35% or when above, resistivity will be bigger, basically be 500 μ Ω cm or more than, so because the loss that eddy current causes is minimum, this is because magnetic interaction diminishes between the M composition, the spin thermal agitation becomes big, produces vibration in the frequency that natural resonance takes place.Therefore, magnetic loss coefficient μ " will present big value in wide region.Therefore, this constituent zone is suitable for the inhibition of wideband high-frequency electric current.
On the other hand, even in the zone of M component ratio, owing to the magnetic interaction between the M composition does not nearly all occur, so magnetic will occur unusually less than zone of the present invention.
When being formed on to be right after, the magnetic loss material is close to electronic circuit and high-frequency current when being suppressed, this material design standard is by magnetic loss coefficient μ, and " and the product of magnetic loss material thickness δ provides; that is to say; μ " δ, in order to be suppressed at the high-frequency current of hundreds of MHz frequencies effectively, rough requirement will be μ " δ 〉=1000 (μ m).Therefore, for presenting μ "=1000 magnetic loss material; 1 μ m or above thickness are essential; therefore the low electrical resistant material to the eddy current loss sensitivity is unsuitable; and suitable constituent be resistivity is 100 Ω cm or above; promptly in constituent system of the present invention; the M component ratio is in such zone, its saturation magnetization only be rendered as the reguline metal magnet that becomes to be grouped into by M saturation magnetization 80% or below, magnetic does not occur unusual, that is the saturation magnetization that presents of this zone be the reguline metal magnet that only becomes to be grouped into by M saturation magnetization 35% or more than.
The present invention is a kind of like this invention, wherein applies for example above-mentioned granular magnetic thin film of magnetic loss film." granular magnetic thin film " meaning is meant at tens MHz and presents the magnetic thin film of very big magnetic loss to the high frequency of several GHz that its fine structure presents the fines from several nm to tens nm diameters.Be also referred to as " film of crystallite " at this in the art film.
Below with reference to the description of drawings embodiments of the invention.
To 6C, semiconductor wafer according to an embodiment of the invention will be described referring to Fig. 6 A.
Shown in semiconductor wafer 51 have the structure identical with semiconductor wafer shown in Figure 1, just its dorsal part covers with magnetic loss film 55.Element with function same as shown in Figure 1 is indicated that by identical reference symbol the explanation for fear of unnecessary no longer is described here.
Along line 35 chip part 53 is divided into single semiconductor bare chip mutually.Finish separation by the common known dicing method that uses scribing machine.These chip parts 53 are semiconductor bare chips 57.
Here, for magnetic loss film 55, can use granular magnetic thin film, this is to be proposed in the international patent application No.PCT/JP01/00437 of application on January 24 calendar year 2001 by the inventor, corresponding to the Japanese patent application No.2000-52507 of application on January 24th, 2000, hereinafter referred to as " in first to file ".This granular magnetic thin film can be made by utilizing sputtering method, reactive sputtering method or vapor deposition method, as illustrated at this specification in first to file.In other words, granular magnetic thin film can be the sputtered film that forms by sputter or reactive sputtering, also can be the vapor deposition film that forms by vapour deposition in addition.In fact, when making granular magnetic thin film,, in the vacuum magnetic field of predetermined temperature, carry out the heat treatment of the scheduled time to this sputtered film or vapor deposition film.
See also be used to describe in detail granular magnetic thin film manufacture method in first to file.
The inventor confirms in test that the granular magnetic thin film of Xing Chenging presents great magnetic loss at the high frequency from tens MHz to several GHz in such a way, even for example 2.0 μ m or following film thickness also are such.
The inventor is also verified in test, according to of the present invention and present μ in the sub-micro wave band " discrete granular magnetic thin film, the order of magnitude that the high-frequency current that presents suppresses effect is identical with the composite magnetic sheet with about 500 times of thickness.Therefore, according to granular magnetic thin film of the present invention, can be used as with material near the anti-electromagnetic interference measure in semiconductor integrated device of the high clock speed work of 1GHz etc.
Below, with reference to figure 7, an example as being used to make as the equipment of the granular magnetic thin film of magnetic loss film 55 illustrates the sputter manufacturing equipment.This sputter manufacturing equipment comprises vacuum chamber 59 and is connected to the gas supply unit 61 and the vacuum pump 23 of this chamber.In this chamber 59, substrate 63 and target 67 are oppositely arranged, the middle flashboard 65 that inserts.Target 67 is made of composition M, and its chips 69 is made of component X and Y or component X, is formed on predetermined space.Support to connect an end of radio-frequency power supply 71, the other end ground connection of radio-frequency power supply 71 on the side at chip 69 and target 67.
Below, use the sputter manufacturing equipment of this structure to make an example of granular magnetic thin film sample 1 explanation.
At first, on the plectane that is fabricated from iron (target 67) of diameter phi=100mm, form 120 Al altogether
2O
3Chip, size=5mm height * 5mm is wide * and 2mm is thick.Then, in vacuum chamber 59, keep about 1.33 * 10 by vacuum pump 73
-4The vacuum of Pa is supplied with argon gas by gas feed unit 61 to vacuum chamber 69, thereby set up argon gas atmosphere within vacuum chamber 59.In this state, by radio-frequency power supply 26 supply high frequency electrical power.For example in this case, form magnetic thin film on the glass substrate by sputtering at, form this substrate 63.Then the magnetic thin film that obtains being lower than under 300 ℃ the temperature conditions, in vacuum magnetic field, carry out heat treatment in 2 hours, obtain sample 1 according to the granular magnetic thin film of previous explanation.
The sample 1 that so obtains is carried out x-ray fluorescence analysis, find to have Fe
72Al
11O
17Constituent, the dc resistivity of the film thickness of 2.0 μ m and 530 μ Ω cm.The anisotropy electric field Hk of sample 1 is 18 (Oe), and saturation magnetization MS is 1.68T (tesla).In addition, the relative bandwidth bwr of sample 1 is 148%.Relative bandwidth bwr obtains by extract frequency bandwidth between two frequencies, at 50% of the μ at these two frequency places " value (imaginary part of magnetic loss coefficient or complex permeability) is maximum μ " max, and this frequency bandwidth of frequency of heart normalization therein.Ratio between the saturation magnetization Ms (M) of sample 1 saturation magnetization Ms (M-X-Y) and the metal magnet only be made up of composition M, promptly { Ms (M-X-Y)/Ms (M) } * 100% is 72.2%.
In order to confirm the magnetic loss characteristic of sample 1, study magnetic permeability μ characteristic (μ-f response) as follows.Measure μ-f response in the banded magnetic test coil by sample 1 is inserted, apply bias magnetic field simultaneously and measure impedance.According to these results, obtain magnetic loss coefficient μ " frequency response (μ "-f response).
The μ of this sample 1 " mark and draw in Fig. 8 by the f response.In Fig. 8, frequency f (MHz) is marked and drawed on transverse axis, and magnetic loss coefficient μ is " on vertical axis.From Fig. 8, " present very big dispersing, peak value is not too sharp-pointed, and resonance frequency is also higher near 700MHz for the magnetic loss coefficient μ of visible sample 1.
Also use high-frequency electromagnetic interference suppressioning effect measuring equipment 6 shown in Figure 9 to test, so that confirm the high-frequency electromagnetic interference suppressioning effect of sample 1.Should be noted that the transmission characteristic S that this high-frequency electromagnetic interference suppressioning effect measuring equipment 65 can be measured between the dual-port
21This is by at first forming the coaxial line 32 that is connected with microstrip line 77, network analyser (HP8753D is not shown) is connected arbitrarily with its two ends, in long dimensional directions, the line length of microstrip line 77 is 75mm, characteristic impedance Zc=50 Ω, then magnet sample 33 be placed on microstrip line 77 formation sample 31a the position directly over.
When near magnetic loss material with formation transmission line next-door neighbour, when thereby transmission line is increased equivalent resistance composition control high-frequency current, as the structure of high-frequency electromagnetic interference suppressioning effect measuring equipment 65, be sure of big young pathbreaker that high-frequency current suppresses effect substantially with magnetic loss coefficient μ " size and the product of magnet thickness δ be directly proportional that is μ " δ.
In Figure 10, marked and drawed transmission characteristic S for frequency f (MHz)
21(dB), this is to use high-frequency electromagnetic interference suppressioning effect measuring equipment 65, and the result of the high-frequency current inhibition effect of measuring samples magnet is shown.
As can be seen from Fig. 10, the transmission characteristic S of sample 1
21On 100MHz, descend, presenting near the 2GHz place-rise once more after the minimum value of 10dB.From these results as seen, though transmission characteristic S
21Depend on magnet magnetic loss coefficient μ " discrete, but the size that suppresses effect depends on above-mentioned product μ " δ.
At present, magnet for example sample 1 can be treated as the formation of the distribution constant line with magnetic permeability μ and DIELECTRIC CONSTANT, and size is 1.In this case, per unit length (Δ 1) has many equivalent electric circuit constants, the unit inductance Δ L of the structure that promptly is connected in series and unit resistance Δ R, and be present in grounding conductance Δ G of unit and the electrostatic capacitance Δ C of unit between those and the ground wire.When these are become based on transmission characteristic S
21Sample size the time, sample 1 can be treated as has inductance L and resistance R and electrostatic capacitance C and the grounding conductance G equivalent electric circuit as the equivalent electric circuit constant.
When investigating the high-frequency electromagnetic interference suppressioning effect here, from the following fact, in situation about being formed on the magnet microstrip line 77, the variation of transmission characteristic S21 mainly results from the resistance R composition of connecting with the inductance L in the equivalent electric circuit and to add, and can study its frequency dependence by the value of finding resistance R.
The value of marking and drawing among Figure 12 is to calculate according to the value of the resistance R of the adding of connecting with the inductance L in the equivalent electric circuit shown in Figure 11.Figure 12 represents the characteristic for the resistance value R of frequency f (MHz) (Ω).
From Figure 12 as seen, R rises simply in sub-micro wave band area resistance value, becomes tens Ω at 3GHz, and its frequency dependence presents to be different near 1GHz and has peaked magnetic loss coefficient μ " the trend of frequency dispersion.These are considered to be caused by the following fact, promptly " the δ, have reflected the ratio that sample size and wavelength increase simply except foregoing product μ.
Based on The above results, " discrete sample presents high-frequency current and suppresses effect, and it is equivalent to have about 500 times built-up magnet sheet of its thickness; therefore, is effective on the high-frequency electromagnetic interference suppression measure of 1GHz to show magnetic loss coefficient μ at the sub-micro wave band in a manner of speaking.
Yet the present invention is not limited to the foregoing description, within the scope that does not break away from subject concept of the present invention, self-evidently can make various improvement.For example, in an embodiment of the present invention, only introduced and used the manufacturing example of sputter, but this method can be another manufacture method, for example vacuum vapor deposition, ion beam vapour deposition or gas precipitation etc. as the method for making granular magnetic thin film.To manufacture method without limits, as long as can realize equably according to magnetic loss film of the present invention.
In addition in an embodiment of the present invention, in vacuum magnetic field, implement heat treatment after forming this film, but for deposited film, as long as constituent and film formation method can obtain performance of the present invention, the processing after the film in the present embodiment introduction is formed without limits.
And in the above-described embodiments, only the situation that semiconductor bare chip 57 or semiconductor wafer 51 dorsal parts are directly applied magnetic loss film 55 is illustrated.Yet, certainly stipulate, the adhesive tape that is formed with the magnetic loss film on its back surface is put on the back side of semiconductor bare chip 57 or semiconductor wafer 51.In addition in the above-described embodiments, having introduced magnetic loss film 55 for example is the situation of granular magnetic thin film.Yet, not restriction, any film can use, as long as present very big magnetic loss at the high frequency from tens MHz to several GHz.
According to the first embodiment of the present invention, as mentioned above, the back side of semiconductor bare chip or semiconductor wafer is covered by the magnetic loss film, therefore can reduce the parasitic radiation that produces from its positive formed integrated circuit effectively.
Below, Semiconductor substrate and manufacture method according to another embodiment of the present invention are described, and the semiconductor device that wherein uses those Semiconductor substrate.
Referring to Figure 13 A and 13B, have magnetic loss parts 89 according to the Semiconductor substrate 85 of second embodiment of the invention, Butut in the presumptive area that on silicon substrate or silicon wafer 87, forms, it all is insulated film 91 and covers.
And, shown in Figure 13 B, in the Semiconductor substrate 85 of present embodiment, be formed with the surface of semiconductor device on it, be with its on be formed with the opposition side on the surface of magnetic loss parts 89.In this external silicon substrate 1,, set up predetermined impurity concentration according to the various semiconductor device that will become final formation product.
The material of magnetic loss parts 89 is made up of M-X-Y, and wherein M is one of Fe, Co and Ni or its mixture, and X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture.The constituent of this magnetic loss parts 89 for example is Fe
72Al
11O
17The magnetic loss parts of this constituent present outstanding absorption characteristic, particularly at the electromagnetic wave of MHz frequency band to the GHz frequency band, can absorb effectively from being formed on the electromagnetic wave of the above-mentioned frequency band that various semiconductor device produced on the silicon substrate 87.
In addition, the magnetic loss parts 89 with above-mentioned constituent are a kind of mixtures, present the high magnetic loss owing to electro-magnetic wave absorption, and the thickness of magnetic loss parts 89 can be thinner significantly.Thereby the thickness of magnetic loss parts 89 can make tens microns or below.
For the semiconductor device of Semiconductor substrate 85 preparations of using present embodiment, studied the electromaganic wave absorbing property that presents by magnetic loss parts 89.The result, with use traditional Semiconductor substrate for example Fig. 2 A compare with the semiconductor device of Semiconductor substrate shown in the 2B 39, wherein the conventional semiconductors substrate does not take to stop the measure of electromagnetic radiation, finds that be 10 decibels (dB) in about 3GHz frequency basically by the electro-magnetic wave absorption effect that magnetic loss parts 2 produce.
For the method that on silicon substrate 87, forms magnetic loss parts 89, at first, use sputter or vapour deposition, for example on the silicon substrate 87 with the surface opposite side that forms above-mentioned semiconductor device on all surfaces on form the layer of magnetic loss parts 89, for example striped, dot matrix or island form magnetic loss parts 2 by predetermined cloth diagram shape by photoetching technique.In order on silicon substrate 87, to form the layer of magnetic loss parts 89, also can use except above-mentioned sputter or the film build method the vapor deposition method, for example chemical vapour phase growth (CVD) method etc.The material that is used for insulation film 91 is assumed to silicon dioxide, silicon nitride or silicon oxynitride.The region area that each magnetic loss parts 89 form is narrower than at least that (length of one side is marked as L among Figure 13 A from each semiconductor device zone that Semiconductor substrate 85 is separated respectively
1) area.
The manufacture method of the Semiconductor substrate 85 of second embodiment below is described.In order to make the Semiconductor substrate 101 among second embodiment, at first shown in Figure 14 A, use foregoing sputter or vapor deposition method etc., formed on it on all surfaces on opposite side of silicon substrate 87 of above-mentioned semiconductor device, form magnetic loss component layer 93.
Then, use above-mentioned photoetching process to form magnetic loss parts 89 by magnetic loss component layer 93 by predetermined pattern.More particularly, as shown in Figure 14B, on magnetic loss parts 93, form photoresist figure 7, then shown in Figure 14 C, magnetic loss parts 89 are formed predetermined pattern, are striped, lattice-like or island as previously mentioned, only keep the part of magnetic loss component layer 93, wherein added photoresist figure 7, as shown in Figure 14B.
So, shown in Figure 14 D, formed the surface of the silicon substrate 87 of magnetic loss parts 89 on it, shown in Figure 14 C, apply the foregoing insulation film of forming by silicon dioxide, silicon nitride or silicon oxynitride 91.Thereby make the Semiconductor substrate 85 of the present embodiment shown in Figure 14 D.
Be formed with each the single zone on the opposite side surfaces of magnetic loss parts 89 in Semiconductor substrate 85, be formed for the circuitous pattern of each semiconductor device, and prepare semiconductor device by cutting those single zones.And, as mentioned above, when forming magnetic loss parts 89, suppose that each semiconductor device comprises that at least one has wherein formed the unit area of magnetic loss parts 89 by striped for example, dot matrix or island.
According to second embodiment, can implement anti-noise measure in the rank that is called substrate itself, therefore can be provided at the technology of the semiconductor device aspect excellence of producing noise suppressed in batches.More particularly, when using this Semiconductor substrate 85 to make semiconductor device, if noise produces from this semiconductor device, then noise does not leak, but the magnetic loss parts 89 that are formed on this semiconductor device back surface absorb.As a result, in other device or equipment, do not cause misoperation.Thereby with in subsequent treatment, one at a time the back surface of each single semiconductor device is applied the noise absorption piece and implements the conventional example of anti-noise measure and compare, the method for present embodiment does not need the plenty of time to be used to implement the processing of anti-noise measure.And, from the following fact, in same treatment process, form formation magnetic loss parts 89 on the regional back surface at the single semiconductor device on the Semiconductor substrate 85, the thickness of magnetic loss parts 89 is not easy to occur changing, therefore, can prevent the noise absorption characteristic appearance variation of single semiconductor device.
With reference to figure 15A and 15B, have first silicon substrate 99 and second silicon substrate 101 that is bonded together according to the Semiconductor substrate 97 of third embodiment of the invention, can be that two silicon substrates are bonded together, or they be engaged by electrostatic bonding.Here, in first silicon substrate 99, press predetermined pattern and form groove 103, and 103 formation of magnetic loss parts are embedded in this groove 103.
Here, shown in Figure 15 B, form the surface of the Semiconductor substrate 97 of semiconductor device on it, can be that first semiconductor device corresponding to first silicon substrate 99 forms the surface, or form the surface corresponding to second semiconductor device of second silicon substrate 101.In silicon substrate 99 or 101 liang of sides, set up predetermined impurity concentration in advance according to the semiconductor device that finally will prepare.
The material of magnetic loss parts 105 is made up of M-X-Y, and wherein M is one of Fe, CO and Ni or its mixture, and X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture.The constituent of this magnetic loss parts 105 for example is Fe
72Al
11O
17The magnetic loss parts of this constituent present outstanding absorption characteristic, particularly, can absorb effectively from being formed on the electromagnetic wave of the above-mentioned frequency band that various semiconductor device produced on first silicon substrate 99 or second silicon substrate 101 at the electromagnetic wave of MHz frequency band to the GHz frequency band.In addition, because the magnetic loss parts 105 with above-mentioned constituent are a kind of mixtures, present because the high magnetic loss of electro-magnetic wave absorption, the thickness of magnetic loss parts 105 can be thinner significantly, that is reach tens microns or below.The region area that each groove 103 forms is narrower than at least from the area in each semiconductor device zone that Semiconductor substrate 97 is separated respectively, and the length of one side is marked as L in Figure 15 A
2In addition, can suitably formulate the thickness t of the first dated silicon substrate 99 of Figure 15 B
1Thickness t with second silicon substrate 101
2, so that satisfy following two conditions.First condition is to have realized the thickness t that requires in the Semiconductor substrate that obtains
1+ t
2Second condition is to formulate t
1, t
2With the degree of depth of this groove 103, so that, make magnetic loss parts 105 be formed on the optimum position according to noise resistance characteristic that is respectively formed at the semiconductor device on first silicon substrate 99 and second silicon substrate 101 and the noisiness that is produced.
The manufacture method of the Semiconductor substrate 97 of the 3rd embodiment below is described.
At first shown in Figure 16 A, on first silicon substrate 99, form after silica 1 07 figure dry etching first silicon substrate 99.As a result, except silica 1 07 visuals, the expose portion of silicon is corroded on first silicon substrate 99, and the figure that forms groove 109 reaches desired depth, shown in Figure 16 B.
Then, shown in Figure 16 C, remove silica 1 07 exposure and have the surface of silicon of groove 109.
Then, shown in Figure 16 D, comprising formation magnetic loss component layer 111 on first silicon substrate, the 99 1 side all surfaces of groove 109, groove 109 is exposing in the operation shown in Figure 16 E.For the formation method of magnetic loss component layer 111,, use for example sputter of film build method, vapour deposition or chemical vapour phase growth (CVD) as the previous explanation of first embodiment.
Then, shown in Figure 16 E, to form first silicon substrate, 99 surfaces on magnetic loss component layer 11 1 sides in operation shown in Figure 16 D, carry out polishing, so that obtain the state that magnetic loss component layer 111 parts of surface of silicon and embedding groove 109 inside are exposed.As a result, shown in Figure 16 E, according to the figure formation magnetic loss parts 105 of the groove 109 on first silicon substrate 99.
And, shown in Figure 16 F, prepare above-mentioned second silicon substrate 101, with first silicon substrate, 99 surfaces, one routine joint the polished in operation shown in Figure 16 E, shown in Figure 16 G.And, in operation shown in Figure 16 F, carry out thermal oxidation in advance with all surfaces of first silicon substrate, 99 opposed second silicon substrate, 111 1 sides.Then, second silicon substrate 101 is engaged with first silicon substrate 99 by electrostatic bonding by a relative side of thermal oxidation.Thereby the Semiconductor substrate 97 shown in preparation Figure 16 G, wherein first silicon substrate 99 and second silicon substrate 101 are bonded together.In Figure 16 G, symbol 113 expression joint interfaces.Semiconductor substrate 97 shown in Figure 16 G is completion statuses of the Semiconductor substrate of present embodiment.
Owing to be the figure of determining groove 109 according to the figure that forms silica 1 07 shown in Figure 16 A, so can form silica 1 07 figure, form predetermined pattern so that embed the figure of the magnetic loss parts 105 of groove 109 inside, form striped, dot matrix or island etc.And in this 3rd embodiment, on the side that magnetic loss parts 105 embed, the surface engagement of second silicon substrate 101 and first silicon substrate 99, therefore, different with first embodiment of previous explanation, needn't with insulation film for example silicon dioxide etc. cover the surface that forms magnetic loss parts 105.
At present, as mentioned above, in the Semiconductor substrate 115 of present embodiment, first semiconductor device that semiconductor device can be formed on corresponding to first silicon substrate 99 forms the surface, or forms the surface corresponding to second semiconductor device of second silicon substrate 101.The semiconductor device circuit figure be formed on these first or second surface in each single zone.And by those single zone preparation semiconductor device of cutting.And as mentioned above, when pressing striped, dot matrix or island formation magnetic loss parts 21, each semiconductor device will comprise at least one unit area that has wherein formed magnetic loss parts 21.
According to present embodiment, can implement anti-noise measure in the stage of substrate itself, therefore can be provided at the technology of the semiconductor device aspect excellence of producing noise suppressed in batches.More particularly, when using this Semiconductor substrate 97 to make semiconductor device, if noise produces from this semiconductor device, then noise can not leak unimpededly, but the magnetic loss parts 105 that are embedded into this semiconductor device inside absorb.As a result, can in other device or equipment, not cause misoperation.Thereby with in subsequent treatment, one at a time the back surface of each single semiconductor device is applied the noise absorption piece and implements the conventional example of anti-noise measure and compare, the method for present embodiment does not need the plenty of time to be used to implement the processing of anti-noise measure.And, because at the interior location that forms the zone corresponding to each semiconductor device in the Semiconductor substrate 97, in same treatment process, form magnetic loss parts 105, so the thickness of magnetic loss parts 105 is not easy to occur changing, therefore, can prevent the noise absorption characteristic appearance variation of each semiconductor device.
Referring to Figure 17 A and 17B, use Semiconductor substrate according to above-mentioned the 3rd embodiment, preparation is according to the semiconductor device 117 of fourth embodiment of the invention.This semiconductor device 117 is formed with first silicon substrate 121 that engages with second silicon substrate 123, and magnetic loss parts 119 embed first silicon substrate 121, and circuitous pattern zone 125 is formed near second silicon substrate, 123 back surface.
For the semiconductor device 117 of the 4th embodiment, because its structure is absorbed by magnetic loss parts 119 effectively near the electromagnetic noise that produces the circuitous pattern zone 125.When the electromaganic wave absorbing property that produces when the semiconductor device 117 to present embodiment is studied, compare, find that the electro-magnetic wave absorption effect approximately is about 10 decibels with the conventional semiconductor devices shown in Figure 4 of wherein not implementing anti-noise measure.And, by the electromaganic wave absorbing property that the semiconductor device 117 of present embodiment produces, compare with the conventional semiconductor devices shown in Figure 5 of wherein not implementing anti-noise measure, in the about frequency of 3GHz, obtain about about 7 decibels electro-magnetic wave absorption effect.
Various embodiment of the present invention more than has been described, but the present invention is not limited to those embodiment, in the scope of the present invention of claims explanations, self-evidently can adopts other embodiment.
In above-mentioned second to the 4th embodiment, for example the material of Semiconductor substrate is that silicon is made, but utilizes the material outside the silica removal also can obtain same effect, for example gallium-arsenic material or silicon-germanium material.
Based on the of the present invention second and the 3rd embodiment, can provide and to absorb effectively from the MHz frequency band to the electromagnetic Semiconductor substrate of the interference of GHz frequency band, when being divided into each device, can present the noise assimilation effect, and present outstanding devices in batches and make productivity ratio, and its manufacture method is provided, the semiconductor device that wherein uses those Semiconductor substrate also is provided.
The fifth embodiment of the present invention below is described.
At first, explanation can be used to an object lesson of conductive magnetism film-forming method of the present invention, this magnetic thin film has the granular texture that comprises that M-X-Y forms, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture.
Under condition shown in the table 1,, be used to confirm the present invention by sputtering at the granular magnetic thin film of preparation on the glass substrate.So the sputtered film that obtains carries out heat treatment in 2 hours in vacuum magnetic field, under 300 ℃, obtains the electromagnetic noise assess sample.
Those samples are carried out x-ray fluorescence analysis, find that the constituent of film is Fe
70Al
12O
18
The D.C. resistance of this sample is 330 μ Ω cm, and Hk is 21 Oe (1.66kA/m), and Ms is 14300 Gausses (1.43T).By adopting SEM to observe its cross section, the film thickness of finding this sample is 2 μ m.
Table 1
| Sputtering condition | |
| Vacuum degree before the deposit | ＜1×10 -6Torr |
| Deposit atmosphere | Ar |
| Power supply | RF |
| Target | Fe (diameter phi: 100mm)+Al 2O 3Chip (135) (chip size: 5mm * 5mm * 2mm t) |
Research μ-f response is so that confirm the magnetic loss characteristic of sample.By in banded magnetic test coil, inserting sample, measure μ-f response, when applying bias magnetic field, measure impedance, thereby obtain magnetic loss coefficient μ " frequency response.
" frequency at 930MHz presents 945 maximum to magnetic loss coefficient μ.Be partitioned into three square samples that the length of side is 20mm from these samples.One of these three samples are made sample 2, and in addition two samples are divided into the formation unit that 0.8mm is square and 3.8mm is square (respectively with 1mm and 4mm spacing) respectively subtly, obtain sample 3 and sample 4 respectively, constitute the direct current conduction that constitutes between the unit and be interrupted, as shown in figure 18.Here, among Figure 18, double-headed arrow 127 expressions are to magnetized axial high impedance.Sample 2,3 and 4 length-width ratio are respectively 5000,400 and 1000, keep shape anisotropy, even so that being divided into subtly when constituting the unit, also can make the opposing magnetic field coefficient can in fact be considered as zero.
Use conduct magnetism noise rating shown in Figure 19 system, sample 2,3 that research so obtains and 4 electromagnetic noise suppress effect.In Figure 19, magnetic noise rating system constitutes like this, the sample of symbol 133 expressions is placed on the microstrip line 131 of dielectric substrate 129, adopts the network analyser 139 that is connected to microstrip line 131 two ends by coaxial cable 135 and 137, measures and estimates.
Here, all samples all to form the axle of magnetization impedance vertical with the long dimensional directions of the microstrip line 131 of the dielectric substrate 129 of evaluation system.For comparative sample confirms short-term (stub) effect, prepare square Copper Foil (having glass plate substrate), its length of side is 20mm, thickness is 18 μ m, by the Copper Foil of at first mentioning being divided into subtly the square formation unit of 0.8mm, make screen cloth shape Copper Foil, constitute the transmitting direct current that constitutes between the unit and be interrupted.Sample 1 and comparative sample 2 are measured with sample of the present invention as a comparison for these.Electromagnetic noise suppresses effect and marks and draws in Figure 20 and 21.
Here, be illustrated among Figure 20 by the reflection characteristic (S11) that in evaluation system, forms the sample generation, and transmission characteristic (S21) similarly is illustrated among Figure 21.Referring to Fig. 3, for sample 2 of the present invention and comparative sample 1 both, in the reflection characteristic (S11) of GHz zone all be-10dB or more than, thereby this shows by directly on transmission line, forming sample and produce reflection.For sample 3 of the present invention or sample 4 and comparative sample 2, these are to be divided into the formation unit that 0.8mm is square or 3.8mm is square subtly, and the structure that gives makes is interrupted at the transmitting direct current that constitutes between the unit, present about-20dB or following reflection characteristic, even at the GHz zone also is like this, can regard areflexia as, and as seen, by the conduction soft magnetic film is divided into size subtly sufficiently less than the wavelength of electromagnetic noise, and each unit that is divided into subtly of electrical isolation can suppress this short-term (stub) effect.
Referring to Figure 21, for being divided into subtly with respect to wavelength is the nonmagnetic comparative sample 4 of enough little formation unit, do not observe decay, but in the sample of the present invention 3 or sample 4 of the soft magnetic bodies sample of cutting apart subtly, observe the loss of transmission property at the GHz frequency band, this is considered to owing to magnetic loss, and the very clear areflexia electromagnetic noise that can present suppresses effect, and this is an effect of the present invention.
Based on the fifth embodiment of the present invention, as mentioned above, can be provided in the effective electromagnetic noise of semiconductor device and the electromagnetic noise aspect in the electronic circuit that suppresses high speed operation and suppress body.
And, can provide the electromagnetic noise inhibition body that can suppress electromagnetic noise effectively with smaller size smaller based on the fifth embodiment of the present invention.
In this external fifth embodiment of the present invention, the application of the invention, soft magnetic film with granular texture has the very narrow thickness of 2 μ m, can control the Conducted Electromagnetic noise and not reflection in small area, for example within semiconductor integrated device, so its industrial value can be described as high.
At last, the sixth embodiment of the present invention is described.
At first, explanation can be used to an object lesson of conductive magnetism film-forming method of the present invention, this magnetic thin film has the granular texture that comprises that M-X-Y forms, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture.
Under condition shown in the table 2,, be used to confirm the present invention by sputtering at the granular magnetic thin film of preparation on the glass substrate.As in vacuum magnetic field, under 300 ℃, carrying out heat treatment in 2 hours, obtain the electromagnetic noise assess sample than the sputtered film that obtains.
Those samples are carried out x-ray fluorescence analysis, find that the constituent of film is Fe
70Al
12O
18
The D.C. resistance of this sample is 330 μ Ω cm, and Hk is 21 Oe (1.66kA/m), and Ms is 14300 Gausses (1.43T).By adopting SEM to observe its cross section, the film thickness of finding this sample is 2 μ m.Research μ-f response is so that confirm the magnetic loss characteristic of sample.
By in constituting banded magnetic test coil, inserting sample, measure μ-f response, when applying bias magnetic field, measure impedance, thereby obtain magnetic loss coefficient μ " frequency response." frequency at 930MHz presents 945 maximum to magnetic loss coefficient μ.From these samples, be partitioned into four shape differences but the identical rectangle sample of surface area,, and as shown in figure 22, be marked as sample 5 to 8 as following table 3 expressions.Double-headed arrow among Figure 22 represents that the magnetization impedance in each sample is axial.
Use Conducted Electromagnetic noise rating shown in Figure 23 system, the electromagnetic noise of the confirmation sample 5 to 8 that research so obtains suppresses effect.Referring to Figure 23, in this Conducted Electromagnetic noise rating system, microstrip line 141 is formed on the dielectric substrate 129, it all carries on the back the surface is conductor, the two ends of microstrip line 141 are connected with network analyser 139 with 137 by means of coaxial cable 135, and sample is in the position of being represented by symbol 143 on the microstrip line 141.The line width that is used for the microstrip line 141 of this evaluation system is 3mm, and it is enough wide width that sample 5 presents with respect to microstrip line 141.On the other hand, the width that sample 6 has is basic identical with the width of microstrip line 141, and the width that sample 7 has is narrower than the width of microstrip line 141.
Test and levy sample 8 is narrower than the width of microstrip line 141 by width three fritters and form.Except that sample 5, form each sample and make from microstrip line 141 outstandingly, form from whole samples of sample 5 to 8, the magnetization impedance axle of sample is vertical with the length dimension of microstrip line.In each situation, the sample length-width ratio of microstrip line 141 width dimensions directions be 10 or more than.For the comparative sample that is used to confirm short-term (stub) effect, the Copper Foil that preparation has glass plate substrate, shape is identical with sample 6 with sample 5 respectively, and width is 18 μ m, is marked as comparative sample 3 and comparative sample 4, measures with sample of the present invention.Electromagnetic noise suppresses the measurement result of effect and marks and draws in Figure 24 and 25.Here, be illustrated among Figure 24 by the reflection characteristic (S11) that in evaluation system, forms the sample generation, and transmission characteristic (S21) similarly is illustrated among Figure 25.
Referring to Figure 24, for sample 6 of the present invention and comparative sample 3 both, in the reflection characteristic (S11) of GHz zone all be-10dB or more than, reflection appears when this shows directly over sample is positioned at microstrip line 141.
Referring to Figure 25, though do not see decay for non magnetic comparative sample 4, but equal or be narrower than in the sample 5 and 7 of width of microstrip line at the width that has, be narrower than in the sample 8 that three fritters of microstrip line form by width, in non magnetic comparative sample 4, observe the loss of transmission property at the GHz frequency band, can think because magnetic loss.The so very clear areflexia electromagnetic noise that has presented as effect of the present invention suppresses effect.
Table 2
| Sputtering condition | |
| Vacuum degree before the deposit | ＜1 * 10-6 torr |
| Deposit atmosphere | Ar |
| Power supply | RF |
| Target | Fe (diameter phi: 100mm)+Al2O3 chip (135) (chip size: 5mm * 5mm * 2mmt) |
Table 3
| Width (mm) | Length (mm) | |||
| The | Sample | 5 | 20 | 3 |
| Sample 6 | 3 | 20 | ||
| |
2 | 30 | ||
| Sample 8 | 2 | 10×3 | ||
| Comparative Examples | |
20 | 3 | |
| |
3 | 20 |
As mentioned above,, the electromagnetic noise composition also can occur and partly be reflected, so that get back to the situation of signal source, therefore exist in signal source and produce the situation that secondary disturbs though suppressed overflowing of electromagnetic noise effectively by forming granular magnet.Yet, be used for the soft magnetic film with granular texture of the present invention, very narrow thickness with 2m, when being used for when of the present invention, can suppress the Conducted Electromagnetic noise and not reflection, even also be that so therefore industrial value of the present invention can be described as high in the small area in the semiconductor integrated device for example.
Claims (14)
1. an electromagnetic noise suppresses body, comprise a kind of conduction soft magnetic film, have a kind of structure, it is enough little formation unit that wherein said soft magnetic film fine is divided into respect to the electromagnetic noise wavelength, and those direct current conduction that constitute between the unit are interrupted.
2. suppress body according to the electromagnetic noise of claim 1, wherein, described soft magnetic film has 10 or above length-width ratio.
3. the electromagnetic noise according to claim 1 suppresses body, and wherein, described soft magnetic film is made up of the constituent of M-X-Y, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture, has granular texture.
4. an electromagnetic noise inhibition method wherein, by directly over microstrip line or signal transmssion line analog, forms described electromagnetic noise and suppresses body, suppresses the electromagnetic noise of conduction.
5. according to the electromagnetic noise inhibition method of claim 4, wherein, dispose described electromagnetic noise and suppress body, so that its hard axis is basically parallel to the Width of described microstrip line or signal transmssion line analog.
6. according to the electromagnetic noise inhibition method of claim 4, wherein, described soft magnetic film is made up of the constituent of M-X-Y, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture, has granular texture.
7. an electromagnetic noise suppresses body, be used to the electromagnetic noise that suppresses to conduct, be included in microstrip line or near the conduction soft magnetic film that connects above the signal transmssion line analog, wherein, the width of the shape that has of described conduction soft magnetic film equals or is narrower than the live width of described microstrip line or signal transmssion line analog substantially.
8. according to the electromagnetic noise inhibition method of claim 7, wherein, dispose described electromagnetic noise and suppress body, so that its hard axis is basically parallel to the Width of described microstrip line or signal transmssion line analog.
9. suppress body according to the electromagnetic noise of claim 7, wherein, the width that the shape of described soft magnetic film has equals or is narrower than the live width of described microstrip line or similar signal transmission line substantially, has 10 or above length-width ratio at Width.
10. the electromagnetic noise according to claim 7 suppresses body, and wherein, described soft magnetic film is made up of the constituent of M-X-Y, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, and Y is one of F, N and O or its mixture, and has granular texture.
11. the electromagnetic noise inhibition method of a conduction is used to the electromagnetic noise that suppresses to conduct, and by at microstrip line or near above the signal transmssion line analog, form and comprise and conduct electricity the electromagnetic noise inhibition body of soft magnetic film, wherein,
The width of the shape that described conduction soft magnetic film has equals or is narrower than the live width of described microstrip line or signal transmssion line analog substantially.
12., wherein, dispose described electromagnetic noise and suppress body, so that its hard axis is basically parallel to the Width of described microstrip line or signal transmssion line analog according to the electromagnetic noise inhibition method of claim 11.
13. according to the electromagnetic noise inhibition method of claim 11, wherein, the width that the shape of described soft magnetic film has equals or is narrower than the live width of described microstrip line or similar signal transmission line substantially, and has 10 or above length-width ratio at Width.
14. electromagnetic noise inhibition method according to claim 11, wherein, described soft magnetic film is made up of the constituent of M-X-Y, wherein M is one of Fe, Co and Ni or its mixture, X is element or its mixture except M and Y, Y is one of F, N and O or its mixture, and has granular texture.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP101895/00 | 2000-04-04 | ||
| JP2000101895A JP4271825B2 (en) | 2000-04-04 | 2000-04-04 | Semiconductor bare chip and semiconductor wafer |
| JP340406/00 | 2000-11-02 | ||
| JP342835/00 | 2000-11-10 | ||
| JP342789/00 | 2000-11-10 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011190329A Division CN1288753C (en) | 2000-04-04 | 2001-04-04 | Electromagnetic noise eliminator, semiconductor device using the eliminator and making method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1937219A true CN1937219A (en) | 2007-03-28 |
| CN100524732C CN100524732C (en) | 2009-08-05 |
Family
ID=18615861
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610136213 Expired - Lifetime CN100524732C (en) | 2000-04-04 | 2001-04-04 | Electromagnetic noise suppressor and electromagnetic noise suppressing method |
| CN 200810149062 Expired - Lifetime CN101388378B (en) | 2000-04-04 | 2001-04-04 | Electromagnetic noise suppressor and method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810149062 Expired - Lifetime CN101388378B (en) | 2000-04-04 | 2001-04-04 | Electromagnetic noise suppressor and method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4271825B2 (en) |
| CN (2) | CN100524732C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101460981B1 (en) | 2008-05-21 | 2014-11-14 | 삼성전자주식회사 | Structure for blocking an electromagnetic interference, and wafer level package and printed circuit board having the same |
| US8426947B2 (en) * | 2010-08-02 | 2013-04-23 | Headway Technologies, Inc. | Laminated semiconductor wafer, laminated chip package and method of manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994765A (en) * | 1996-07-01 | 1999-11-30 | Sun Microsystems, Inc. | Clock distribution network with efficient shielding |
| JP3608063B2 (en) * | 1996-08-23 | 2005-01-05 | Ｎｅｃトーキン株式会社 | EMI countermeasure component and active element including the same |
-
2000
- 2000-04-04 JP JP2000101895A patent/JP4271825B2/en not_active Expired - Fee Related
-
2001
- 2001-04-04 CN CN 200610136213 patent/CN100524732C/en not_active Expired - Lifetime
- 2001-04-04 CN CN 200810149062 patent/CN101388378B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN101388378A (en) | 2009-03-18 |
| CN101388378B (en) | 2011-01-26 |
| JP4271825B2 (en) | 2009-06-03 |
| JP2001284538A (en) | 2001-10-12 |
| CN100524732C (en) | 2009-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6595802B1 (en) | Connector capable of considerably suppressing a high-frequency current | |
| KR100908356B1 (en) | Electromagnetic noise suppression body and electromagnetic noise suppression method using the same | |
| JP2001283652A (en) | Communication cable | |
| EP1143774B1 (en) | Wiring board comprising granular magnetic film | |
| US6495927B2 (en) | Resin-molded unit including an electronic circuit component | |
| CN100524732C (en) | Electromagnetic noise suppressor and electromagnetic noise suppressing method | |
| JP2001284878A (en) | Wiring board | |
| EP1146637B1 (en) | Electronic component of a high frequency current suppression type and bonding wire for the same | |
| US6624714B2 (en) | Radiator capable of considerably suppressing a high-frequency current flowing in an electric component | |
| KR100749679B1 (en) | Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same | |
| JP4191888B2 (en) | Electromagnetic noise suppressor and electromagnetic noise suppression method using the same | |
| JP2002151883A (en) | Electromagnetic noise suppressing body and method for suppressing electromagnetic noise using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Sendai City, Miyagi Prefecture, Japan Patentee after: Tokin Corporation Address before: Sendai City, Miyagi Prefecture, Japan Patentee before: NEC Tokin Corp. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090805 |