CN1936070A - Preparation method for improving silicon film compactness - Google Patents
Preparation method for improving silicon film compactness Download PDFInfo
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- CN1936070A CN1936070A CN 200510086466 CN200510086466A CN1936070A CN 1936070 A CN1936070 A CN 1936070A CN 200510086466 CN200510086466 CN 200510086466 CN 200510086466 A CN200510086466 A CN 200510086466A CN 1936070 A CN1936070 A CN 1936070A
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Abstract
The invention relates to a manufacturing method for using electron beam vaporizing technology to improve the compactness of high silicon film. It includes the following steps: two gun electron beams irradiating to silicon film and silicon dioxide film in vacuum, the deposition rate is strictly controlled that once reaches 3.5, the compactness reaches large value, decreasing the vaporization rate and the reflective index would begin to decrease. The invention is easy to operate and the melting point would not be restrained by the capability difference of the two films.
Description
Technical field
The invention belongs to optical film technology field, be meant a kind of preparation method who improves silicon film compactness especially.
Background technology
The blooming that the deposited by electron beam evaporation technology realizes, relatively poor because of the compactness of rete, cause the optical property instability, reliability is relatively poor, bad phenomenon such as the high-index material specific refractory power is relatively low, for this reason, in order to improve the silicon fiml compactness of high refractive index, adopt ion auxiliary technology usually, but, this technical matters complexity, and cause substrate damage easily, in opto-electronic device, use the influence that will bring some secondary faces.The raising silicon fiml compactness technology of preparing that the present invention mentions is to overcome these shortcomings, employed method is the rush-harvesting and rush-planting electron beam evaporation technique, the room of reducing electron beam evaporation by while evaporation differing materials, improve the compactness of film, improve the specific refractory power and the stability of silicon fiml, adopt this technology to realize that the blooming of high reflection can use less high low-index film logarithm simultaneously, advantage such as this method possesses that technology is simple, membranous layer stability good, good reliability, blooming stress are little.
Summary of the invention
The objective of the invention is to, a kind of raising silicon fiml compactness technology of preparing is provided, particularly those opto-electronic device chambeies face optical thin films need to the compactness of film and the rete technology of preparing of reliability requirement harshness, this technology of preparing is to realize the silicon fiml of high compactness with two kinds of specific refractory power coating materials of the simultaneously common evaporation height of twin-cathode ray beam evaporation technique, be respectively silicon and silicon-dioxide by the coating materials of evaporation, the vaporator rate proportioning of two kinds of coating materials of strict control in the evaporate process.
The preparation method of raising silicon film compactness of the present invention is mainly used in the technology of preparing of various optical thin films, particularly silicon fiml compactness is required than higher field, in the special field of optical films of optical communication, semiconducter device and other needs, important use is arranged all, can improve the specific refractory power and the stability of silicon fiml, realize low-loss optical film structure.
Technical scheme
A kind of deposited by electron beam evaporation technology improves the preparation method of silicon film compactness, use the rush-harvesting and rush-planting electron beam to evaporate silicon and the realization of silicon-dioxide coating materials simultaneously, the vaporator rate ratio of two kinds of coating materials of strict control evaporation in the evaporate process, change compactness and refractive index value that the evaporation speed ratio can be regulated rete, comprise the steps:
Step 1: silicon fiml material and silicon-dioxide coating materials are contained in respectively in two crucibles, then the rush-harvesting and rush-planting electron beam coater are extracted into high vacuum, promptly the vacuum tightness value is smaller or equal to 1 * 10
-4Pascal;
Step 2: substrate is heated to 200-300 ℃, and temperature control;
Step 3: set the deposition rate of two kinds of coating materials in computer-controlled program, the unlocking electronic rifle starts the deposit program then;
Step 4: under computer control, accurately control the deposition rate of two kinds of coating materials respectively, thereby realize the silicon fiml of high compactness by two quartz crystal vibrators.
The preparation method of described raising silicon film compactness, wherein said electron beam coater is a bielectron rifle coating equipment.
The preparation method of described raising silicon film compactness, the wherein said coating materials that is evaporated is silicon and silicon-dioxide, also can be silicon and another coating materials, as: alchlor etc.;
The preparation method of described raising silicon film compactness wherein uses two electron beam gun to distinguish two kinds of coating materials of evaporation simultaneously.
The preparation method of described raising silicon film compactness wherein controls the vaporator rate of two kinds of coating materials respectively with the quartz crystal controller.
The preparation method of described raising silicon film compactness, change the deposition rate ratio of evaporation coating materials, the compactness and the specific refractory power of silicon fiml will be changed, vaporator rate ratio minimizing along with silicon and silicon-dioxide, the compactness of silicon fiml will increase, and when their ratio reduced to 3.5 left and right sides, the compactness of film reached bigger value, when vaporator rate ratio continued to reduce, specific refractory power will reduce.
The preparation method of described raising silicon film compactness in the process of deposition membrane, requires the thermostatic control substrate temperature, and this temperature is generally 200-300 ℃, also can expand to other temperature.
The preparation method of described raising silicon film compactness, used substrate can be optical glass surface, also can be semiconductor photoelectronic device chamber face, also can be other all device surface that needs the deposit blooming.
The preparation method of described raising silicon film compactness, this kind of evaporation rete need carry out under condition of high vacuum degree, and the vacuum tightness value is generally less than and equals 1 * 10
-4Pascal.
The preparation method of described raising silicon film compactness, by changing the vaporator rate ratio of silicon fiml material and silicon-dioxide coating materials, the refractive index value of silicon film can be regulated between 1.5 and 3.5, accurately controls vaporator rate and other processing parameter, can accurately control the specific refractory power and the compactness of silicon fiml.
Characteristics of the present invention are:
(1) characteristics of the raising silicon fiml compactness technology of preparing of the present invention's proposition are: the evaporation technique that uses is the rush-harvesting and rush-planting electron beam evaporation technique, by evaporation technology parameter realization high refractive index, the high compactness silicon fiml of strictness control evaporation silicon and silicon-dioxide;
When (2) using the rush-harvesting and rush-planting electron beam evaporation, the mode of taking is the mode of steaming altogether simultaneously, starts electron beam gun simultaneously by computer-controlled program;
(3) two kinds of coating materials mentioning of the present invention are respectively to have silicon and silicon-dioxide, also can be silicon and another coating materials, and their fusing point can be close, also bigger difference can be arranged;
(4) silicon film specific refractory power size and the compactness mentioned of the present invention is subjected to the influence of the vaporator rate proportioning of silicon and silicon-dioxide, can be by control their velocity of evaporation ratio magnitude control of evaporation simultaneously.
Description of drawings
Fig. 1 is the preparation method's of a raising silicon film compactness of the present invention schema.
Embodiment
The preparation method's of the raising silicon film compactness of Fig. 1 flow process, specific as follows:
Under high vacuum, the deposited by electron beam evaporation technology prepares the silicon fiml rete that specific refractory power is 3.5 (wavelength is 1550nm), and two kinds of coating materials of evaporation silicon and silicon-dioxide are realized simultaneously.Control the evaporate process of two kinds of specific refractory power coating materials of common steaming simultaneously by computer, control the vaporator rate of two kinds of coating materials respectively with two quartz crystal vibrators, when preparing the film rete of this example, the vaporator rate ratio of silicon and silicon-dioxide is 3.5.Certainly, the equipment difference that evaporation is used, the precision difference of substrate temperature difference, quartz crystal vibrator control, the compactness of the silicon fiml of evaporation and specific refractory power will be subjected to certain influence, but the compactness of silicon fiml will have bigger increase than independent evaporation silicon fiml technology.If the vaporator rate ratio of silicon and silicon-dioxide when reducing evaporation promptly increases the relative vaporator rate of silicon-dioxide, under the situation of the compactness that guarantees film, the specific refractory power of rete will reduce.
Claims (10)
1, a kind of deposited by electron beam evaporation technology improves the preparation method of silicon film compactness, it is characterized in that, use the rush-harvesting and rush-planting electron beam to evaporate silicon and the realization of silicon-dioxide coating materials simultaneously, the vaporator rate ratio of two kinds of coating materials of strict control evaporation in the evaporate process, change compactness and refractive index value that the evaporation speed ratio can be regulated rete, comprise the steps:
Step 1: silicon fiml material and silicon-dioxide coating materials are contained in respectively in two crucibles, then the rush-harvesting and rush-planting electron beam coater are extracted into high vacuum, promptly the vacuum tightness value is smaller or equal to 1 * 10
-4Pascal;
Step 2: substrate is heated to 200-300 ℃, and temperature control;
Step 3: set the deposition rate of two kinds of coating materials in computer-controlled program, the unlocking electronic rifle starts the deposit program then;
Step 4: under computer control, accurately control the deposition rate of two kinds of coating materials respectively, thereby realize the silicon fiml of high compactness by two quartz crystal vibrators.
2, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, wherein said electron beam coater is a bielectron rifle coating equipment.
3, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, the wherein said coating materials that is evaporated is silicon and silicon-dioxide, also can be silicon and another coating materials, alchlor.
4, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, wherein uses two electron beam gun to distinguish two kinds of coating materials of evaporation simultaneously.
5, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, wherein controls the vaporator rate of two kinds of coating materials respectively with the quartz crystal controller.
6, the preparation method of raising silicon film compactness according to claim 1, it is characterized in that, change the deposition rate ratio of evaporation coating materials, to change the compactness and the specific refractory power of silicon fiml, along with the vaporator rate ratio minimizing of silicon and silicon-dioxide, the compactness of silicon fiml will increase, when their ratio reduces to 3.5 left and right sides, the compactness of film reaches bigger value, and when vaporator rate ratio continued to reduce, specific refractory power will reduce.
7, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, in the process of deposition membrane, requires the thermostatic control substrate temperature, and this temperature is generally 200-300 ℃, also can expand to other temperature.
8, the preparation method of raising silicon film compactness according to claim 1, it is characterized in that, used substrate can be optical glass surface, also can be semiconductor photoelectronic device chamber face, also can be other all device surface that needs the deposit blooming.
9, the preparation method of raising silicon film compactness according to claim 1 is characterized in that, this kind of evaporation rete need carry out under condition of high vacuum degree, and the vacuum tightness value is generally less than and equals 1 * 10
-4Pascal.
10, the preparation method of raising silicon film compactness according to claim 1, it is characterized in that, by changing the vaporator rate ratio of silicon fiml material and silicon-dioxide coating materials, the refractive index value of silicon film can be regulated between 1.5 and 3.5, accurately control vaporator rate and other processing parameter, can accurately control the specific refractory power and the compactness of silicon fiml.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510086466 CN1936070A (en) | 2005-09-22 | 2005-09-22 | Preparation method for improving silicon film compactness |
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| CN 200510086466 CN1936070A (en) | 2005-09-22 | 2005-09-22 | Preparation method for improving silicon film compactness |
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| CN1936070A true CN1936070A (en) | 2007-03-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100526500C (en) * | 2007-10-31 | 2009-08-12 | 中国科学院上海光学精密机械研究所 | Automatic control equipment for electron beam evaporation rate and control method thereof |
| CN103060758A (en) * | 2013-01-22 | 2013-04-24 | 中国科学院物理研究所 | Pulse electron beam deposition method of nano/micron silicon film |
| CN108485030A (en) * | 2018-03-28 | 2018-09-04 | 浙江达因包装材料有限公司 | A kind of processing technology of the special shrink film of bowl face |
-
2005
- 2005-09-22 CN CN 200510086466 patent/CN1936070A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100526500C (en) * | 2007-10-31 | 2009-08-12 | 中国科学院上海光学精密机械研究所 | Automatic control equipment for electron beam evaporation rate and control method thereof |
| CN103060758A (en) * | 2013-01-22 | 2013-04-24 | 中国科学院物理研究所 | Pulse electron beam deposition method of nano/micron silicon film |
| CN103060758B (en) * | 2013-01-22 | 2015-12-23 | 中国科学院物理研究所 | The pulsed electron beam deposition method of nanometer and micron silicon film |
| CN108485030A (en) * | 2018-03-28 | 2018-09-04 | 浙江达因包装材料有限公司 | A kind of processing technology of the special shrink film of bowl face |
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