CN1935627A - Micro structure and its manufacturing method - Google Patents
Micro structure and its manufacturing method Download PDFInfo
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- CN1935627A CN1935627A CN 200510103765 CN200510103765A CN1935627A CN 1935627 A CN1935627 A CN 1935627A CN 200510103765 CN200510103765 CN 200510103765 CN 200510103765 A CN200510103765 A CN 200510103765A CN 1935627 A CN1935627 A CN 1935627A
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Abstract
The invention is a microstructure, comprising a substrate and a photoresist layer, where the substrate has a surface and the photoresist layer is arranged on the surface and has at least a concave part which has a side wall, a depth and a width, and the dip angle of the side wall is not less than 5 degrees and the ratio of the depth to the width is not less than 2.
Description
Technical field
The present invention relates to a kind of micro-structural and manufacture method thereof, particularly a kind of micro-structural and manufacture method thereof with high-aspect-ratio.
Background technology
(Micro Electromechanical System is common a kind of structure in MEMS) to the sloped sidewall structure, and it can be used as contact hole plug, dielectric layer hole connector or is applied to precise and tiny mould at MEMS.The manufacture method of existing sloped sidewall structure is generally with machining, for example planes, modes such as grinding, Laser Processing or discharge processing finish.
Please refer to shown in Figure 1A to Fig. 1 C, it has shown a kind of schematic diagram of manufacturing process of existing MEMS medium dip side wall construction.Shown in Figure 1A, a workpiece (workpiece) 10 with a surface 101 at first is provided, and selected one instrument 11 with an inclined plane 111; Then shown in Figure 1B, utilize this surface 101 of 11 pairs of these workpiece 10 of this instrument for example to utilize processing modes such as cutting, grinding, planing to process; Last as Fig. 1 C, after to be processed the finishing, promptly formation one has the recess C1 of sloped sidewall on this workpiece 10.
Yet above-mentioned processing method is subject to the size and the precision of instrument itself, is not easy to form in MEMS the sloped sidewall structure of high precision, high-resolution and low surface roughness, and its technology door and cost are quite high.Therefore, be provided at micro-structural and the manufacture method thereof that to produce high precision, high-resolution and low surface roughness in the MEMS, can produce in batches to reduce cost real one of the current important topic that belongs to.
Summary of the invention
Because above-mentioned problem, the purpose of this invention is to provide a kind of micro-structural and manufacture method thereof with high precision, high-resolution and low surface roughness, can produce in batches when reducing worker and reduce cost.
For achieving the above object, comprise a substrate and a photoresist layer according to a kind of micro-structural of the present invention.This substrate has a surface, and this photoresist layer is arranged on this surface of this substrate and has at least one recess, and this recess has a sidewall, a degree of depth and a width.Wherein, the angle of inclination of this sidewall is not less than 5 degree, and the ratio of this degree of depth and this width is not less than 2.
For achieving the above object, comprise the following steps: at first to provide a substrate according to the manufacture method of a kind of micro-structural of the present invention, this substrate has a surface, and roughness that should the surface is greater than 50nm; Then on this surface, form a photoresist layer; Then provide a mask on this photoresist layer, this mask has a predetermined pattern; Then provide a light source to shine this photoresist layer by this mask; Remove this photoresist layer of part at last, make this photoresist layer form at least one recess, and this recess has a sidewall, a degree of depth and a width, the angle of inclination of this sidewall is not less than 5 and spends, and the ratio of this degree of depth and this width is not less than 2.
For achieving the above object, the manufacture method of foundation another kind of micro-structural of the present invention comprises the following steps: at first to provide a substrate, and this substrate has a surface; Then on this surface, form a photoresist layer; Then provide a mask on this photoresist layer, this mask has a predetermined pattern; Then provide a light source and this photoresist layer to form one first angle, and shine this photoresist layer by this mask; Then adjust this light source and this photoresist layer forms one second angle, and shine this photoresist layer by this mask; Remove this photoresist layer of part at last, make this photoresist layer form at least one recess, and this recess has a sidewall, a degree of depth and a width, the angle of inclination of this sidewall is not less than 5 and spends, and the ratio of this degree of depth and this width is not less than 2.
For achieving the above object, comprise the following steps: at first to provide a transparent substrates with a surface according to the manufacture method system of another micro-structural of the present invention, this surface has at least one light tight district; Then on this surface of this transparent substrates, form a photoresist layer; Then provide a light source to shine this photoresist layer by this transparent substrates; Remove this photoresist layer of part at last, make this photoresist layer form at least one recess, and this recess has a routine wall, a degree of depth and a width, wherein the angle of inclination of this sidewall is not less than 5 and spends, and the ratio of this degree of depth and this width is not less than 2.
From the above, because of this photoresist layer is set on this substrate according to a kind of micro-structural of the present invention and manufacture method thereof, utilize semiconductor technology (for example photoetching process) to form again and have micro-structural, therefore its resolution ratio, precision and surface roughness are all better than the existing mode of machining of utilizing, and advantage according to semiconductor technology, make micro-structural to produce in batches, when reducing worker and reduce cost.
Description of drawings
Figure 1A to 1C is a kind of schematic diagram of existing MEMS medium dip side wall construction manufacturing process;
Fig. 2 is the schematic diagram according to a kind of micro-structural of the preferred embodiment of the present invention;
Fig. 3 is another schematic diagram according to a kind of micro-structural of the preferred embodiment of the present invention;
Fig. 4 A to Fig. 4 E is the schematic flow sheet according to the manufacture method of a kind of micro-structural of first embodiment of the invention;
Fig. 5 A to Fig. 5 F is the schematic flow sheet according to the manufacture method of a kind of micro-structural of second embodiment of the invention;
Fig. 6 A to Fig. 6 D is the schematic flow sheet according to the manufacture method of a kind of micro-structural of third embodiment of the invention; And
Fig. 7 A to Fig. 7 D is the schematic flow sheet according to the manufacture method of a kind of micro-structural of fourth embodiment of the invention.
The primary clustering symbol description
10 workpiece, 51 transparency carriers
101 surface C, 1 recess
The 11 instrument D1 degree of depth
111 inclined plane W1 width
21,31,41 substrate θ, 1 angle of inclination
23,512 light tight districts, 22 structure sheafs
513 lens, 32,42,52 photoresist layers
33,43 masks, 211,311,411,511 surfaces
331,431 predetermined patterns, 221,321,421,521 recesses
34,44,53 light sources, 222,322,422,522 sidewalls
The specific embodiment
Hereinafter with reference to accompanying drawing, a kind of micro-structural and manufacture method thereof according to the preferred embodiment of the present invention are described, wherein identical assembly will be illustrated with identical reference marks.
Please refer to shown in Figure 2ly, a kind of micro-structural of the preferred embodiment of the present invention is applied to MEMS, and this micro-structural comprises a substrate 21 and a structure sheaf 22.
This substrate 21 has a surface 211.In the present embodiment, this substrate 21 can be a transparent substrates, half transparent substrates or a light tight substrate, and roughness that wherein should surface 211 can be greater than 50nm, but not as limit.
This structure sheaf 22 is arranged on this surface 211 of this substrate 21.In addition, structure sheaf 22 has at least one recess 221, and this recess 221 has a sidewall 222, a depth D 1 and a width W 1.Wherein a tilt angle theta 1 of this sidewall 222 is not less than 5 degree, and the ratio of this depth D 1 and this width W 1 is not less than 2.In addition, the characteristic size of this recess 221 is not more than 0.5mm, and machining accuracy is not more than 0.01mm.Moreover the tilt angle theta 1 of this sidewall 222 of this recess 221 can be symmetrical expression or is asymmetric, and promptly the tilt angle theta 1 of this sidewall 222 of this recess 221 can change according to actual demand.
In the present embodiment, this degree of depth is not less than 0.03mm, therefore, is not less than at the ratio of this depth D 1 and this width W 1 under 2 the definition, and this width is not more than 0.015mm.In addition, in the present embodiment, this structure sheaf 22 can be via a photoresist layer (not shown) is provided in advance, again through forming after the exposure imaging process, again this photoresist layer is removed, perhaps this structure sheaf 22 directly is a photoresist layer, and its material can be a positive type light sensitive material, a negative photosensitive material, an individual layer photosensitive material or a multilayer photosensitive material, visual actual needs and select the suitable photosensitive material and the number of plies for use.
Please refer to shown in Figure 3 again, when this substrate 21 of this micro-structural is transparent substrates or semi-transparent substrate, then have a light tight district 23 in a bottom surface of this recess 221, this light tight district 23 is arranged on this surface 211 of this substrate 21, and all the other features are all same as described above, so repeat no more.
Below conjunction with figs. is illustrated four embodiment of the manufacture method of micro-structural of the present invention.
The manufacture method of a kind of micro-structural of first embodiment of the invention may further comprise the steps: please refer to shown in Fig. 4 A, a substrate 31 with a surface 311 at first is provided, and roughness that should surface 311 is greater than 50nm.In the present embodiment, this surface 311 of this substrate 31 can be made via a surface roughening procedure, for example is that a grit blast procedure, a discharge procedures, a laser-induced thermal etching program, a plasma etching program or a chemical etching program are to form a rough surface.Perhaps, can also on this surface 311 of this substrate 31 a uneven layer (not shown) be set in addition and form a rough surface, the roughness of this uneven layer also can be made via the surface roughening procedure greater than 50nm.
Please refer to Fig. 4 B again, then on this surface 311 of this substrate 31, form a photoresist layer 32.In the present embodiment, the material of this photoresist layer is a negative photosensitive material, and the thickness of this photoresist layer 32 is not less than 0.03mm.
Then, shown in Fig. 4 C, on this photoresist layer 32, provide a mask 33 with a predetermined pattern 331.In the present embodiment, this predetermined pattern 331 of this mask 33 is a lighttight predetermined pattern.
Then, shown in Fig. 4 D, provide a light source 34 to shine this photoresist layer 32 for another example by this mask 33.
At last, shown in Fig. 4 E, remove this photoresist layer 32 of part, make this photoresist layer 32 form at least one recess 321, this recess 321 has a sidewall 322, a depth D 1 and a width W 1, and a tilt angle theta 1 of this sidewall 322 is not less than 5 degree, and this depth D 1 is not less than 2 with the ratio of this width W 1.In the present embodiment, this recess 321 forms via a photoetching process, because this photoresist layer 32 is a negative photosensitive material, therefore be not subjected to the part of these light source 34 irradiations after via this photoetching process, then to form this recess 321, because photoetching process is general semiconductor technology common technology, so do not add to give unnecessary details in this.In addition, in the present embodiment, this depth D 1 of this recess 321 is all 0.03mm mutually with the thickness of this photoresist layer 321, and is not less than at the ratio of this depth D 1 and this width W 1 under 2 the definition, and this width W 1 of this recess 321 is not more than 0.015mm.In the present embodiment, the characteristic size of this recess 321 is not more than 0.5mm, and its machining accuracy is not more than 0.01mm.Moreover in the present embodiment, this tilt angle theta 1 of this recess 321 is when this light source 34 these photoresist layers 32 of irradiation, and a scattering (scattering) phenomenon that is produced by this rough surface 311 of this substrate 31 forms.
The manufacture method of a kind of micro-structural of second embodiment of the invention may further comprise the steps: please refer to shown in Fig. 5 A, a substrate 41 with a surface 411 at first is provided.
Please refer to Fig. 5 B again, then on this surface 411 of this substrate 41, form a photoresist layer 42.In the present embodiment, the material of this photoresist layer 42 is a negative photosensitive material, and the thickness of this photoresist layer 42 is not less than 0.03mm.
Then, shown in Fig. 5 C, on this photoresist layer 42, provide a mask 43 with a predetermined pattern 431.In the present embodiment, this predetermined pattern 431 of this mask 43 is a lighttight predetermined pattern.
Then, shown in Fig. 5 D, provide a light source 44 and this photoresist layer 42 to form one first angle, and shine this photoresist layer 42 for another example by this mask 43.
Then, shown in Fig. 5 E, adjust this light source 44 and form one second angle, and shine this photoresist layer 42 for another example by this mask 43 with this photoresist layer 42.In the present embodiment, this first angle and this second angle can utilize position or the angle of adjusting this light source 44, or adjust the position of this photoresist layer 42 and this substrate 41 or angle and form.
At last, shown in Fig. 5 F, remove this photoresist layer 42 of part, make this photoresist layer 42 form at least one recess 421, this recess 421 has a sidewall 422, a depth D 1 and a width W 1, and a tilt angle theta 1 of this sidewall 422 is not less than 5 degree, and this depth D 1 is not less than 2 with the ratio of this width W 1.In the present embodiment, this recess 421 also forms via a photoetching process, because this photoresist layer 42 is a negative photosensitive material, therefore is not subjected to the part of these light source 44 irradiations then to form this recess 421 after via this photoetching process.In addition, in the present embodiment, this depth D 1 of this recess 421 is all 0.03mm mutually with the thickness of this photoresist layer 421, and is not less than at the ratio of this depth D 1 and this width W 1 under 2 the definition, and this width W 1 of this recess 421 is not more than 0.015mm.In the present embodiment, the characteristic size of this recess 421 is not more than 0.5mm, and its machining accuracy is not more than 0.01mm.
The manufacture method of a kind of micro-structural of third embodiment of the invention may further comprise the steps: please refer to shown in Fig. 6 A, at first provide one to have the transparent substrates 51 on a surface 511, and should have at least one light tight district 512 in surface 511.
Please refer to Fig. 6 B again, then on this surface 511 of this substrate 51, form a photoresist layer 52.In the present embodiment, the material of this photoresist layer 52 is a negative photosensitive material, and the thickness of this photoresist layer 52 is not less than 0.03mm.
Then, shown in Fig. 6 C, provide a light source 53 to shine this photoresist layer 52 for another example by this transparent substrates 51.
At last, shown in Fig. 6 D, remove this photoresist layer 52 of part, make this photoresist layer 52 form at least one recess 521, this recess 521 has a sidewall 522, a depth D 1 and a width W 1, and a tilt angle theta 1 of this sidewall 522 is not less than 5 degree, and this depth D 1 is not less than 2 with the ratio of this width W 1.In the present embodiment, this recess 521 forms via a photoetching process, because this photoresist layer 52 is a negative photosensitive material, therefore is not subjected to the part of these light source 53 irradiations then to form this recess 521 after via this photoetching process.In addition, in the present embodiment, this depth D 1 of this recess 521 is all 0.03mm mutually with the thickness of this photoresist layer 521, and is not less than at the ratio of this depth D 1 and this width W 1 under 2 the definition, and this width W 1 of this recess 521 is not more than 0.015mm.In the present embodiment, the characteristic size of this recess 521 is not more than 0.5mm, and its machining accuracy is not more than 0.01mm.Moreover, in the present embodiment, this tilt angle theta 1 of this recess 521 is when these light source 53 these photoresist layers 52 of irradiation, is formed in diffraction (diffraction) phenomenon and/or refraction (refraction) phenomenon that this light tight district 512 produces by this light source 53.
The manufacture method of a kind of micro-structural of fourth embodiment of the invention then please refer to shown in Fig. 7 A to Fig. 7 D, its step is described identical with aforementioned the 3rd embodiment, so do not repeat them here, difference is that this surface 511 also has at least one transparent area, comprise lens 513 on it, these lens 513 can make light pass through the back and produce the effect that focuses on, so when light source 53 shines this photoresist layer 52 by this transparent substrates 51, see also shown in Fig. 7 C, light produces by these lens 513 backs and focuses on, thereby can control the tilt angle theta 1 of this sidewall 522 when removing this photoresist layer 52 of part, reach identical effect.
In sum, because of this photoresist layer is set on this substrate according to a kind of micro-structural of the present invention and manufacture method thereof, utilize semiconductor technology (for example photoetching process) to form again and have micro-structural, therefore all Billy is better with the mode of machining for its resolution ratio, precision and surface roughness, and advantage according to semiconductor technology, make micro-structural to produce in batches, when reducing worker and reduce cost.
The above only is an illustrative, but not is restricted.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the scope of claim its equivalent modifications of carrying out or change.
Claims (19)
1, a kind of micro-structural comprises:
One substrate has a surface; And
One structure sheaf is arranged on this surface of this substrate and has at least one recess, and this recess has a sidewall, a degree of depth and a width;
Wherein, the machining accuracy of this recess is not more than 0.01mm, and the angle of inclination of this sidewall is not less than 5 degree, and the ratio of this degree of depth and this width is not less than 2.
2, micro-structural as claimed in claim 1, wherein the characteristic size of this recess is not more than 0.5mm, and this degree of depth is not less than 0.03mm.
3, micro-structural as claimed in claim 1, wherein the surperficial roughness of this of this substrate is greater than 50nm.
4, micro-structural as claimed in claim 1, wherein this structure sheaf can be a photoresist layer, the material of this photoresist layer is a positive type light sensitive material, a negative photosensitive material, an individual layer photosensitive material or a multilayer photosensitive material.
5, micro-structural as claimed in claim 1, wherein this recess has the two side, and this two side is symmetrical expression or asymmetric.
6, micro-structural as claimed in claim 1, wherein this substrate is transparent substrates or semi-transparent substrate, a bottom surface of this recess has a light tight district.
7, a kind of manufacture method of micro-structural comprises the following steps:
One substrate is provided;
On this substrate, form a photoresist layer;
Provide a mask on this photoresist layer, this mask has a predetermined pattern;
Provide a light source to shine this photoresist layer by this mask; And
Remove this photoresist layer of part, make this photoresist layer form at least one recess, and this recess has a sidewall, a degree of depth and a width, the angle of inclination of this sidewall is not less than 5 and spends, and the ratio of this degree of depth and this width is not less than 2.
8, the manufacture method of micro-structural as claimed in claim 7, wherein this substrate has a surface, and this surperficial roughness is greater than 50nm.
9, the manufacture method of micro-structural as claimed in claim 7, wherein this substrate has a surface, also comprises the following steps:
One uneven layer is provided, is positioned on this surface of this substrate, wherein the roughness of uneven layer is greater than 50nm.
10, the manufacture method of micro-structural as claimed in claim 7, wherein to form a rough surface, wherein this surface roughening procedure is selected from following group via a surface roughening procedure on this surface of this substrate: grit blast procedure, a discharge procedures, a laser-induced thermal etching program, a plasma etching program or a chemical etching program are to form rough surface.
11, the manufacture method of micro-structural as claimed in claim 7, the wherein scattering phenomenon that produces in this surface by this light source of this angle of inclination of this recess and forming.
12, the manufacture method of micro-structural as claimed in claim 7, wherein said this light source that provides also comprises the following steps: by the step that this mask shines this photoresist layer
Provide this light source and this photoresist layer to form one first angle, and shine this photoresist layer by this mask; And
Adjust this light source and this photoresist layer forms one second angle, and shine this photoresist layer by this mask.
13, the manufacture method of micro-structural as claimed in claim 12, wherein this first angle and this second angle utilization are adjusted the position of this light source and are formed or adjust the position of this photoresist layer and this substrate and form.
14, a kind of manufacture method of micro-structural comprises the following steps:
One substrate is provided, and this substrate has a surface, and this surface has an at least one light tight district and a transparent area;
On this surface of this substrate, form a photoresist layer;
Provide a light source to shine this photoresist layer by this transparent substrates; And
Remove this photoresist layer of part, make this photoresist layer form at least one recess, and this recess has a sidewall, a degree of depth and a width, the angle of inclination of this sidewall is not less than 5 and spends, and the ratio of this degree of depth and this width is not less than 2.
15, as the manufacture method of claim 7 or 14 described micro-structurals, wherein the characteristic size of this recess is not more than 0.5mm, and the machining accuracy of this recess is not more than 0.01mm.
16, as the manufacture method of claim 7 or 14 described micro-structurals, the thickness of wherein formed this photoresist layer is not less than 0.03mm.
17, as the manufacture method of claim 7 or 14 described micro-structurals, wherein this recess forms via a photoetching process.
18, the manufacture method of micro-structural as claimed in claim 17, the wherein diffraction phenomena that produces by this light source of this angle of inclination of this recess and/or refraction effect and form.
19, the manufacture method of micro-structural as claimed in claim 14 wherein also comprises lens on this transparent area of this substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510103765 CN1935627A (en) | 2005-09-23 | 2005-09-23 | Micro structure and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510103765 CN1935627A (en) | 2005-09-23 | 2005-09-23 | Micro structure and its manufacturing method |
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| CN1935627A true CN1935627A (en) | 2007-03-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200510103765 Pending CN1935627A (en) | 2005-09-23 | 2005-09-23 | Micro structure and its manufacturing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477534A (en) * | 2010-11-29 | 2012-05-30 | 鸿富锦精密工业（深圳）有限公司 | Plated piece and preparation method thereof |
| CN106842825A (en) * | 2017-03-21 | 2017-06-13 | 京东方科技集团股份有限公司 | Master mold and its manufacture method |
-
2005
- 2005-09-23 CN CN 200510103765 patent/CN1935627A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477534A (en) * | 2010-11-29 | 2012-05-30 | 鸿富锦精密工业（深圳）有限公司 | Plated piece and preparation method thereof |
| CN102477534B (en) * | 2010-11-29 | 2015-09-09 | 鸿富锦精密工业（深圳）有限公司 | Film-coated part and preparation method thereof |
| CN106842825A (en) * | 2017-03-21 | 2017-06-13 | 京东方科技集团股份有限公司 | Master mold and its manufacture method |
| US11131930B2 (en) * | 2017-03-21 | 2021-09-28 | Boe Technology Group Co., Ltd. | Female mold and method for manufacturing the same |
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Open date: 20070328 |