CN1934717B - Compound semiconductor light-emitting diode - Google Patents
Compound semiconductor light-emitting diode Download PDFInfo
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- CN1934717B CN1934717B CN2005800080715A CN200580008071A CN1934717B CN 1934717 B CN1934717 B CN 1934717B CN 2005800080715 A CN2005800080715 A CN 2005800080715A CN 200580008071 A CN200580008071 A CN 200580008071A CN 1934717 B CN1934717 B CN 1934717B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 150000001875 compounds Chemical class 0.000 title claims abstract description 73
- 238000009792 diffusion process Methods 0.000 claims abstract description 125
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims description 283
- 239000011247 coating layer Substances 0.000 claims description 61
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 230000014509 gene expression Effects 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- QKPDTDDCZSIQKB-UHFFFAOYSA-N [As].[P].[B] Chemical compound [As].[P].[B] QKPDTDDCZSIQKB-UHFFFAOYSA-N 0.000 claims description 3
- DBQBWZSDXNFYJI-UHFFFAOYSA-N [B].[N].[P] Chemical compound [B].[N].[P] DBQBWZSDXNFYJI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- QPPVHTWLBDKBNX-UHFFFAOYSA-N [P].[In].[B] Chemical compound [P].[In].[B] QPPVHTWLBDKBNX-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910017401 Au—Ge Inorganic materials 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VUWFPBLFKYUOFJ-UHFFFAOYSA-N [As].[P].[In].[B] Chemical compound [As].[P].[In].[B] VUWFPBLFKYUOFJ-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
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- 238000003776 cleavage reaction Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 230000000717 retained effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.
Description
The cross reference of related application
According to 35U.S.C. § 119 (e) (1), the application requires the priority of the U.S. Provisional Application 60/555,417 of submission on March 23rd, 2004.
Technical field
The present invention relates to a kind of with the compound semiconductor light-emitting diode (hereinafter can be called compound semiconductor LED) of III-V compound semiconductor layer as luminescent layer, wherein this LED has the current-diffusion layer in the wide zone that is used to make the LED operating current be diffused into luminescent layer, causes high emission intensity.
Background technology
Known have by AlGaInP mixed crystal (component molecular formula: Al
XGa
YIn
ZP:0≤X, Y, Z≤1, X+Y+Z=1) LED of the luminescent layer of Gou Chenging emission have with green glow to the light of the corresponding wavelength of ruddiness (see Y.Hosokawa et al., J.Crystal Growth, Vol.221 (2000), Holland, p.652-656).
Disclose in above-mentioned Y.Hosokawa et al., the luminescent layer of launching the visible light with shorter wavelength is usually by Al
XGa
YIn
ZP forms and presents the big relatively band gap of about 2eV under the room temperature.
Usually, such luminescent layer has heterostructure, wherein engages (join) coating layer to form heterojunction, is used for the enhanced rad combined efficiency and obtains the high-strength light emission.
By Al
XGa
YIn
ZIn the luminescent layer that P forms, coating layer is wider than the Al of luminescent layer band gap by presenting its band gap
XGa
YIn
ZP forms, and this coating layer is as being engaged to form the barrier layer of heterojunction.Although the acquisition effect of carrier confinement, because coating layer is formed by the semiconductor layer that presents broad-band gap, such coating layer is not enough to usually make and is used to make the electric current (being device operation current) of device work to be diffused in the wide region of luminescent layer.
In order to address this problem, a kind of prior art adopts the current-diffusion layer on coating layer, so that device operation current is diffused into the wide region interior (seeing United States Patent (USP) 5,008,718) of luminescent layer.
In order to spread device operation current widely, current-diffusion layer is made of the semi-conducting material that presents the relative narrow band gap band gap of luminescent layer (for example, less than).
For example, a kind of compound semiconductor light-emitting diode of launching orange light or red-emitting is disclosed, wherein by Al
XGa
YIn
ZBe provided with by gallium aluminium arsenic (component molecular formula: Al on the luminescent layer that P constitutes
XGa
YAs:0≤X, Y≤1) current-diffusion layer that constitutes (seeing the 4th page among the Japanese Unexamined Patent Publication No 11-4020 for example, [0010] section).
Yet the current-diffusion layer that is formed by the semi-conducting material that presents such narrow band gap in essence absorbs the light of being launched by luminescent layer.Therefore, even having, luminescent layer can obtain the photoemissive heterojunction structure of high strength, as long as LED has conventional structure, and just can not be consistently and make high strength LED reliably, in conventional structure, on the light-emitting zone on the extraction side, current-diffusion layer is set.
Simultaneously, disclose a kind of like this LED, it has by the optically transparent material current-diffusion layer (seeing for example Japanese Unexamined Patent Publication No 2001-144330) that forms of indium tin complex oxide film (being abbreviated as ITO) for example.
Owing to present broad-band gap and low resistance, transparent oxide for example ITO can be as the material that forms current-diffusion layer, and this current-diffusion layer is extracted the outside also as Window layer by this Window layer light.
Yet transparent oxide runs into the difficulty aspect the ohmic contact of keeping consistently with the III-V compound semiconductor usually, and can not obtain the diffusion of device operation current in wide zone.
In order to overcome above problem, above-mentioned Japanese Unexamined Patent Publication No 2001-144330 discloses a kind of by adopting such electrode structure to make device operation current be diffused into technology in the luminescent layer, in this electrode structure, a plurality of Ohmic electrodes are arranged on the coating layer that is made of the III-V compound semiconductor discretely.
Yet, when Ohmic electrode is provided with discretely,, needing heavy step in order to make LED or other device, this is debatable.
The current-diffusion layer that requirement is included among the LED is formed by optically transparent material, is extracted the outside so that device operation current is diffused in the wide zone of luminescent layer fully and allows by the light of luminescent layer emission, and does not absorb the light of emission.In order to satisfy above requirement, current-diffusion layer must present the band gap of being wider than luminescent layer under the room temperature.
Yet, as the Al of current-diffusion layer by the routine employing
XGa
YWhen As (0≤X, Y≤1) formed, very difficult formation presented the conductor layer of enough low resistance.In other words, kept to form reliably the defective that makes the current-diffusion layer that device operation current suitably spreads.
Simultaneously, comprise the II-VI compound semiconductor layer easy oxidation of zinc (Zn) as component element.In order to make luminescent device, must apply this II-VI family semiconductor layer with the anti-oxidation protection film with good functional reliability.Such operation bidirectional makes device fabrication steps become heavy.
As the oxidation material of the another kind of material of current-diffusion layer ITO for example, can not obtain reliably with for example as the good ohmic contact of the III-V compound semiconductor of coating layer.Therefore, the resistance between coating layer and the current-diffusion layer that formed by transparent oxide material or similar material increases, and this is unfavorable for presenting the manufacturing of the LED of low forward voltage (Vf).
Summary of the invention
The present invention is intended to attempt solving the problems referred to above that are included in the routine techniques.Therefore, by the current-diffusion layer that is formed by compound semiconductor materials is provided, the invention provides a kind of compound semiconductor LED that good electrical characteristics comprise good forward voltage that presents, described compound semiconductor materials can easily be formed with to be beneficial to and cause device operation current to be diffused into the interior low resistance conductor layer of luminescent layer, and described compound semiconductor materials optical clear, and obtain and be included in the good ohmic contact of the III-V compound semiconductor among the LED.
Therefore, the present invention is intended to following aspect.
(1) a kind of compound semiconductor light-emitting diode, the current-diffusion layer that comprises the luminescent layer that constitutes by the III-V compound semiconductor and be arranged on the described luminescent layer and constitute by the III-V compound semiconductor, it is characterized in that, described current-diffusion layer is made of the semiconductor based on boron phosphide of conduction, and the room temperature band gap of described current-diffusion layer is wider than the room temperature band gap of described luminescent layer.
(2) as above (1) described compound semiconductor light-emitting diode, wherein said current-diffusion layer by be selected from a boron phosphide, by component molecular formula B
αGa
γIn
1-α-γThe boron gallium indium phosphorus of P (0＜α≤1,0≤γ＜1) expression, by component molecular formula BP
1-δN
δ(0≤δ＜1) expression boron nitrogen phosphorus and by component molecular formula B
αP
1-δAs
δAt least a formation in the boron arsenic phosphorus of expression.
(3) as above (1) or (2) described compound semiconductor light-emitting diode, the difference between the room temperature band gap of wherein said current-diffusion layer and the room temperature band gap of described luminescent layer is 0.1eV or bigger.
(4) as any one described compound semiconductor light-emitting diode in above (1) to (3), wherein said current-diffusion layer has the room temperature band gap of 2.8eV to 5.0eV.
(5) as any one described compound semiconductor light-emitting diode in above (1) to (4), wherein said current-diffusion layer has more than or equal to 1 * 10
19Cm
-3The room temperature carrier concentration, smaller or equal to 5 * 10
-2The room temperature resistivity of Ω cm, and 50nm to 5, the thickness of 000nm.
(6) as any one described compound semiconductor light-emitting diode in above (1) to (5), wherein said diode is included in the coating layer that is made of the III-V compound semiconductor between described current-diffusion layer and the described luminescent layer, and the room temperature band gap of described coating layer is wider than the room temperature band gap of described luminescent layer and is equaled or be narrower than the room temperature band gap of described current-diffusion layer.
(7) as above (6) described compound semiconductor light-emitting diode, wherein said coating layer is made of the III-V compound semiconductor that comprises aluminium, gallium and indium, and described current-diffusion layer constitutes by comprising at least a semiconductor based on boron phosphide that is selected from aluminium, gallium and the indium.
(8) as above (6) or (7) described compound semiconductor light-emitting diode, wherein said diode comprises the content gradually variational layer that has composition gradient and be made of the semiconductor based on boron phosphide, and described content gradually variational layer is as described current-diffusion layer and described coating layer.
(9) as any one described compound semiconductor light-emitting diode in above (1) to (8), wherein said luminescent layer is by AlGaInP mixed crystal (component molecular formula: Al
XGa
YIn
ZP:0≤X, Y, Z≤1 X+Y+Z=1) constitutes, and in described current-diffusion layer and the described coating layer at least one is by wittingly its unadulterated semiconductor based on boron phosphide that adds impurity element not being constituted.
(10) as any one described compound semiconductor light-emitting diode in above (1) to (9), wherein Ohm contact electrode is engaged to described current-diffusion layer or described content gradually variational layer.
Description of drawings
Fig. 1 is the schematic cross-section of the LED of example 1; And
Fig. 2 is the schematic cross-section of the LED of example 2.
The explanation of reference number
10，20 LED
11 stepped constructions
100 GaAs substrates
101 p type resilient coatings
Coating layer under the 102 p types
103 n type luminescent layers
Coating layer on the 104 n types
105 current-diffusion layers
106 n type Ohmic electrodes
107 p type Ohmic electrodes
108 content gradually variational layers
Embodiment
Compound semiconductor light-emitting diode of the present invention comprises luminescent layer that is made of the III-V compound semiconductor and the current-diffusion layer that is arranged on the luminescent layer.
Current-diffusion layer is made of the semiconductor based on boron phosphide that belongs to a kind of III-V compound semiconductor, and makes and to be used to make the forward device operation current of light-emitting diode work to spread in luminescent layer.
Current-diffusion layer has wide room temperature band gap and is made of the semiconductor layer based on boron phosphide, and makes device operation current spread in coating layer and luminescent layer and effectively as Window layer, and the light by this Window layer emission is extracted the outside.
According to the present invention, current-diffusion layer has the room temperature band gap of being wider than the luminescent layer band gap, and is made of low-resistance semiconductor based on boron phosphide.Therefore, device operation current can spread in wide light-emitting zone.In addition, current-diffusion layer is optically transparent, presents the good ohmic contact characteristic with the luminescent layer that is made of the III-V compound semiconductor, and can easily form.
Therefore, can make a kind of compound semiconductor light-emitting diode, it presents good electrical characteristics and comprises good forward voltage, obtains the uniform emissive porwer in light-emitting zone, and do not absorb emission light, and light is sent to the outside with even emissive porwer.
This LED also is included in the coating layer that is made of the III-V compound semiconductor between current-diffusion layer and the luminescent layer, and the room temperature band gap of this coating layer is wider than the band gap of luminescent layer and is equaled or be narrower than the band gap of current-diffusion layer.Therefore, this band gap can gradually change from the luminescent layer to the current-diffusion layer on the thickness direction of compound semiconductor light-emitting diode, thereby the compound semiconductor light-emitting diode that presents low forward voltage can be provided.
When current-diffusion layer and coating layer have broad-band gap and are formed by the semiconductor based on boron phosphide of low-resistance conduction, such compound semiconductor light-emitting diode can be provided, and it can have almost the light of intensity uniformly by the in fact whole zone emission of luminescent layer.
At luminescent layer by AlGaInP mixed crystal (component molecular formula: Al
XGa
YIn
ZP:0≤X, Y, Z≤1, X+Y+Z=1) under the situation of Gou Chenging, current-diffusion layer forms by comprising the unadulterated boron phosphide of phosphorus as component element.By adopting this structure, the band gap of current-diffusion layer increases, thereby resistance is reduced.
Therefore, can provide a kind of compound semiconductor light-emitting diode, it can be so that device operation current be diffused in the in fact whole surface of luminescent layer, and by the in fact whole zone emission of luminescent layer have be concerned about the light of the uniform strength of wavelength.
Here the term of Cai Yonging " based on the semiconductor of boron phosphide " is meant and has the cubic zinc blende crystal structure and comprise boron (B) as essential elements and the III-V compound semiconductor of phosphorus (P).The example comprises by component molecular formula B
αAl
βGa
γIn
1-alpha-beta-γP
1-δAs
δThe compound of (0＜α≤1,0≤β＜1,0≤γ＜1,0＜alpha+beta+γ≤1,0≤δ＜1) expression; And by component molecular formula B
αAl
βGa
γIn
1-alpha-beta-γP
1-δN
δThe compound of (0＜α≤1,0≤β＜1,0≤γ＜1,0＜alpha+beta+γ≤1,0≤δ＜1) expression.
Wherein, the present invention especially preferably adopts the semiconducting compound of the element (for example, aluminium (Al)) that does not comprise easy oxidation.Example comprises a boron phosphide (BP), by component molecular formula B
αGa
γIn
1-α-γThe boron gallium indium phosphorus of P (0＜α≤1,0≤γ＜1) expression, by component molecular formula BP
1-δN
δ(0≤δ＜1) expression boron nitrogen phosphorus and by component molecular formula B
αP
1-δAs
δThe boron arsenic phosphorus of expression, they are the mixed crystals that comprise a plurality of V group elements.
Current-diffusion layer according to the present invention is made of the semiconductor based on boron phosphide of conduction, and its room temperature band gap is wider than the room temperature band gap of luminescent layer.
Difference between the room temperature band gap of current-diffusion layer and the room temperature band gap of luminescent layer is preferably greater than and equals 0.1eV.When this difference during more than or equal to 0.1eV, the current-diffusion layer of formation is enough to as Window layer.
Band gap can according to absorb (=h ν) to the dependence (dependency) of photon energy or according to the product of reflection coefficient (n) and extinction coefficient (k) (=2nk) definite to the dependence of photon energy.
For example, when the luminescent layer of compound semiconductor light-emitting diode of emission blue light is made of the III-V compound semiconductor and has the room temperature band gap of 2.7eV, the current-diffusion layer by the room temperature band gap that constitute and that have 2.8eV to 5.0eV of the semiconductor based on boron phosphide is set on luminescent layer.
Preferably, current-diffusion layer is constituted and is had the room temperature band gap of 2.8eV to 5.0eV by the semiconductor based on boron phosphide.When satisfying above condition, current-diffusion layer can be sent to visible light (for example, ruddiness is to green glow) outside, thereby as Window layer.
When the current-diffusion layer that is made of the semiconductor based on boron phosphide has band gap greater than 5.0eV, energy gap between current-diffusion layer and luminescent layer or the coating layer increases excessively, and this is not preferred for the compound semiconductor light-emitting diode that manufacturing presents low forward voltage or threshold voltage.
Preferably, current-diffusion layer has more than or equal to 1 * 10
19Cm
-3The room temperature carrier concentration, smaller or equal to 5 * 10
-2The room temperature resistivity of Ω cm, and 50nm to 5, the thickness of 000nm.
Should be used as current-diffusion layer effectively based on low-resistance semiconductor layer of boron phosphide, also as Window layer, the light of being launched by luminescent layer is sent to the outside by this Window layer.
The current-diffusion layer that is made of the semiconductor based on boron phosphide passes through method of vapor-phase growing for example halogen method, halide method or MOCVD (metal organic chemical vapor deposition), perhaps molecular beam epitaxy (is seen J.Solid State Chem., 133 (1997), P.269-272) form.
For example, the current-diffusion layer that is made of n type one boron phosphide (BP) can be by adopting boron triethyl (molecular formula: (C
2H
5)
3B) and hydrogen phosphide (molecular formula: PH
3) as the source, form by atmospheric pressure (near atmospheric pressure) or decompression MOCVD.
During the forming of the current-diffusion layer that is made of n type one boron phosphide (BP), ratio (V/III ratio is supplied with in the source; For example, PH
3/ (C
2H
5)
3B) be preferably greater than and equal 200, more preferably greater than equaling 400.
Here the term of Cai Yonging " V/III ratio " is meant the atomic concentration and the ratio that comprises the III family atoms of elements concentration of boron of the V group element that comprises phosphorus, and these sources are fed into the vapor phase growth zone.
By the formation speed of accurate control except formation temperature and V/III ratio, can form the current-diffusion layer that constitutes by semiconductor based on boron phosphide, in fact this current-diffusion layer does not absorb by the light of luminescent layer emission and presents broad-band gap.
Preferred 700 ℃ to 1,000 ℃ of the formation temperature of n type BP layer.
Similarly, the current-diffusion layer that is made of p type one boron phosphide (BP) can be by adopting boron triethyl (molecular formula: (C
2H
5)
3B) and hydrogen phosphide (molecular formula: PH
3) as the source, form by atmospheric pressure (near atmospheric pressure) or decompression MOCVD.
Preferred 1,000 ℃ to 1,200 ℃ of the formation temperature of p type BP layer.During layer formed, ratio (V/III ratio was supplied with in the source; For example, PH
3/ (C
2H
5)
3B) preferred 10 to 50.
Especially when the formation rate controlled is 2nm/min to 30nm/min, can make constitute by a boron phosphide and present current-diffusion layer (seeing Japanese patent application No. 2002-158282) more than or equal to the room temperature band gap of 2.8eV.
Next, another embodiment with the explanation compound semiconductor light-emitting diode, wherein compound for enhanced rad, will join the luminescent layer that constitutes by the III-V compound semiconductor by the coating layer that the III-V compound semiconductor constitutes to, thereby launch high-intensity light.
In the above-described embodiments, current-diffusion layer is set on the coating layer.Therefore, coating layer is between luminescent layer and current-diffusion layer.
Preferably, the room temperature band gap of current-diffusion layer is wider than the room temperature band gap of coating layer.Under this band gap condition, the light of being launched by luminescent layer can be sent to the outside, prevents light absorption simultaneously as far as possible effectively.
Especially preferably, the room temperature band gap of coating layer is wider than the room temperature band gap of luminescent layer and is equaled or be narrower than the room temperature band gap of current-diffusion layer.Under this band gap condition, from the current-diffusion layer to the luminescent layer, band gap reduces, thereby can prevent the increase of the threshold value of the increase of forward voltage of LED and LD.
When coating layer by the III-V compound semiconductor for example by component molecular formula Al
XGa
YIn
ZP (0≤X, Y, Z≤1, X+Y+Z=1) Biao Shi compound or when comprising similar compound as Al, the Ga of III family element and In and forming, current-diffusion layer preferably constitutes by comprising at least a semiconductor based on boron phosphide that is selected from Al, Ga and In.
Under these conditions, during forming current-diffusion layer on the coating layer, the lip-deep III family's element (Al, Ga and In) that is present in coating layer has promoted to comprise the growth of these elements as the current-diffusion layer of component element.Therefore, current-diffusion layer can easily form, and presents good the adhering to coating layer.
Comprising at least a semi-conductive example based on boron phosphide that is selected among Al, Ga and the In comprises by component molecular formula B
αGa
γIn
1-α-γThe above-mentioned boron gallium indium phosphorus of P (0＜α≤1,0≤γ＜1) expression, by component molecular formula B
αIn
1-αThe boron indium phosphorus of P (0＜α＜1) expression, and by component molecular formula B
αIn
1-αP
1-δAs
δThe boron indium arsenic phosphorus of (0＜α＜1,0＜δ＜1) expression.
When III-V compound semiconductor (for example, the Al of zinc (Zn) doping that intentionally it is added a kind of doping of impurity element is provided
XGa
YIn
ZDuring P) as coating layer, can change the carrier concentration and the conduction type of luminescent layer from the impurity element (zinc) of coating layer diffusion.In this case, can apply the forward voltage (Vf) that departs from the voltage of being concerned about, perhaps can launch the light of the wavelength that its wavelength departure is concerned about.
Comparatively speaking, the mix semiconductor based on boron phosphide of (being n type or p type) presents low resistance under the dopant states not.
Therefore, coating layer is preferably formed by unadulterated semiconductor based on boron phosphide.Because coating layer has low impurity element amount, the amount that is diffused into the impurity element in the luminescent layer can reduce, thereby can prevent otherwise the deterioration of the luminescent layer characteristic that will cause by the foreign matter elemental diffusion.In addition, because low resistance can promote the diffusion of device operation current in luminescent layer.
Simultaneously, do not have a mind to it is added under the unadulterated situation of semiconductor as current-diffusion layer based on boron phosphide of impurity element providing, can obtain and identical effect yet by the coating layer acquisition.
Has wide band gap by unadulterated coating layer or the current-diffusion layer that constitutes based on the semiconductor of boron phosphide.Therefore, when luminescent layer by by component molecular formula Ga
XIn
1-XThe gallium indium nitrogen of N (0≤X≤1) expression or by component molecular formula GaN
1-YP
YWhen the gallium nitrogen phosphorus of (0≤Y≤1) expression constituted, a unadulterated boron phosphide layer can be used as n type or p type coating layer.
Especially work as luminescent layer by comprising compound semiconductor materials (for example, the component molecular formula Al of phosphorus (P) as component element
XGa
YIn
ZP (0≤X, Y, Z≤1, X+Y+Z=1)) when constituting, more preferably, a unadulterated boron phosphide is as coating layer.
When luminescent layer comprises a large amount of phosphorus as component element, luminescent layer and reduce as the difference based on the phosphorus atoms concentration between the semiconductor layer of boron phosphide of current-diffusion layer or coating layer.Therefore, the P atom is suppressed to the diffusion of luminescent layer from current-diffusion layer or coating layer, thereby can prevent the deterioration of luminescent layer.
Coating layer is engaged in the compound semiconductor light-emitting diode of luminescent layer therein, and the preferred content gradually variational layer that has composition gradient and be made of the semiconductor based on boron phosphide that is provided with is to be used as current-diffusion layer and coating layer.
In the content gradually variational layer, such composition gradient is provided, so that increasing direction (i.e. top from the luminescent layer to the current-diffusion layer) at thickness, band gap goes up increase.
For example, at the content gradually variational layer by boron gallium phosphorus (B
1-XGaXP:0≤X≤1) under the situation of Gou Chenging, composition gradient is set so that thickness increase boron (B) ratio of component on the direction (=1-X) increase, and gallium (Ga) ratio of component (=X) reduce.Specifically, composition gradient is set, so that the content gradually variational layer segment that contacts with luminescent layer forms by gallium phosphide (GaP), the boron ratio of component of this gallium phosphide (=1-X) be 0.Along with layer thickness increases to current-diffusion layer from coating layer, the boron ratio of component increases.The top of current-diffusion layer is that 1 BP forms by the boron ratio of component.
The semiconductor layer based on boron phosphide of the content gradually variational with composition gradient of She Zhiing can be brought up to for example 2.8eV or bigger from 2.2eV with the room temperature band gap of gallium phosphide thus, and can be used as current-diffusion layer and coating layer.
By the semiconductor layer based on boron phosphide (content gradually variational layer) with composition gradient that the band gap of making reduces to luminescent layer gradually from current-diffusion layer is provided, can prevent the increase of the threshold value of the increase of forward voltage of LED and LD.
When forming the content gradually variational layer that is used as current-diffusion layer and coating layer, composition gradient is set, so that the band gap linearity, progressively or curve-like change profile ground variation.
The part that is used as the content gradually variational layer of coating layer has composition gradient, so that band gap increases on the direction that thickness increases gradually.
On current-diffusion layer or content gradually variational layer, n type or p type Ohmic electrode are set.Under the situation that current-diffusion layer or content gradually variational layer are made of the n N-type semiconductor N based on boron phosphide, Ohmic electrode can by gold (Au) alloy for example gold (Au)-germanium (Ge) form.
Under the situation that current-diffusion layer or content gradually variational layer are made of the p N-type semiconductor N based on boron phosphide, Ohmic electrode can be formed by nickel (Ni), nickel alloy, gold (Au)-zinc (Zn) alloy, gold (Au)-beryllium (Be) alloy etc. that routine adopts.
When Ohmic electrode has sandwich construction, welding (bonding) for convenience, uppermost layer is preferably formed by gold (Au) or aluminium (Al).Have at Ohmic electrode under the situation of three-decker, the intermediate layer that is arranged between bottom and the uppermost layer can be formed by transition metal (for example titanium (Ti), molybdenum (Mo) or platinum (Pt)).
By adopting current-diffusion layer or the content gradually variational layer that constitutes by semiconductor based on boron phosphide, even be wider than another layer for example during the band gap of coating layer when the band gap of current-diffusion layer or content gradually variational layer, on current-diffusion layer or content gradually variational layer, can form the electrode that presents good ohmic contact.
The reason that can form this good Ohmic electrode is as follows.With by Al
XGa
YAs or Al
XGa
YIn
ZThe conventional current diffusion layer phase ratio that P constitutes, the current-diffusion layer or the content gradually variational layer that are made of the semiconductor based on boron phosphide present less ionic bond characteristic.Therefore, even band gap is very wide, also can obtain conductive layer, compare with conventional semi-conducting material, this conductive layer presents significantly low resistance.In the semiconductor based on boron phosphide, being in not a boron phosphide (BP) of dopant states can easily provide and have 10
19Cm
-3To 10
20Cm
-3The conductive layer of high carrier concentration.Therefore, by broad-band gap, for the emission light that extracts the outside, the current-diffusion layer or the content gradually variational layer that are made of the semiconductor based on boron phosphide present good transmissivity (permeability).On current-diffusion layer or content gradually variational layer, can form the Ohmic electrode of low contact resistance.
Example
＜example 1 〉
Next, will describe the present invention in detail with reference to exemplary boron phosphide LED with the current-diffusion layer that constitutes by a boron phosphide semiconductor.
Fig. 1 is the schematic cross-section of boron phosphide LED10 with example 1 of two heterogeneous (DH) junction structures and its stepped construction 11.Because Fig. 1 is a schematic diagram, the size of component layers (for example thickness proportion) can be different from actual numerical value.
By sequentially stacked with lower floor on zinc (Zn) doped p type (100) GaAs (GaAs) single crystalline substrate 100: the p type GaAs resilient coating 101 of zinc doping, by AlGaInP the mixed crystal ((Al of zinc doping
0.70Ga
0.30)
0.50In
0.50P) the following coating layer 102 of Gou Chenging, by (Al
0.14Ga
0.86)
0.50In
0.50The unadulterated n type luminescent layer 103 that P constitutes, and by (Al
0.70Ga
0.30)
0.50In
0.50 Coating layer 104 on selenium (Se) doped n type that P constitutes, and cambium layer stack structure 11 (see J.KoreanAssociation of Crystal Growth, 11 (5) (2001), P.207-210).
By (Al
0.70Ga
0.30)
0.50In
0.50The unadulterated n type boron indium phosphorus (B of deposition on the last coating layer 104 that P constitutes
0.40In
0.60P), thus form current-diffusion layer 105.
The current-diffusion layer 105 that is made of n type boron indium phosphorus passes through to adopt boron triethyl (molecular formula: (C
2H
5)
3B) as boron (B) source, trimethyl indium (molecular formula: (CH
3)
3In) as indium source and hydrogen phosphide (molecular formula: PH
3) as the phosphorus source, form by atmospheric pressure (near atmospheric pressure) metal organic vapor (MOVPE).
Current-diffusion layer 105 with form its room temperature band gap for the identical condition of the condition of employing during the boron phosphide (BP) of about 4.3eV under, promptly be 800, growth temperature is that 700 ℃ and growth rate are to form under the condition of 30nm/min at the V/III ratio.
Boron (B) the component ratio that forms the n type boron indium phosphorus of current-diffusion layer 105 is controlled to be 0.40, so as not with the GaAs lattice match, but obtain broad-band gap.The thickness of the current-diffusion layer 105 that is made of n type boron indium phosphorus is 700nm.
The current-diffusion layer of finding to form thus 105 is by unadulterated n type B
0.40In
0.60The P formation also has the room temperature band gap of 2.5eV.
Find that sub-concentration of room temperature download stream and resistivity are 1 * 10
20Cm
-3With 2 * 10
-2Ω cm.
On the whole surface of current-diffusion layer 105, by the vacuum vapor deposition and the electron-beam vapor deposition of routine, sequentially deposited gold-germanium (Au/Ge) alloy film, nickel (Ni) film and gold (Au) film.
Subsequently, by known photoetching technique these metal films of composition optionally, only be retained in the part that will be provided with also as the n type Ohmic electrode 106 of the pad electrode of welded wire so that have above-mentioned triple electrode by the film formed bottom surface of Au-Ge alloy.
Except the zone that n type Ohmic electrode 106 is set, metal film (comprising the Au-Ge alloy film) is removed by etching, exposes so that be used as the surface of the n type boron indium phosphorus layer of current-diffusion layer 105.
After removing photo anti-corrosion agent material, composition n type boron indium phosphorus layer optionally so that the groove of grid pattern to be provided, is used for structure cuts is become luminescent device (chip) once more.Groove has the live width of 50 μ m, and be arranged on substrate 100＜110〉crystal orientation identical directions on.
Subsequently, comprise the plasma dry etching of the halogen compound gas body of chlorine, optionally remove the grid pattern of the n type boron indium phosphorus layer that forms thus by employing.
On the whole back side of p type GaAs single crystalline substrate 100,, thereby form p type Ohmic electrode 107 by vacuum vapor deposition deposited gold-beryllium (Au-Be) film of routine.
Along have 50 μ m live widths and be arranged on substrate 100＜above-mentioned narrow strip groove cleavage GaAs substrate 100 on 110〉the crystal orientation identical directions, thereby make square (350 μ m * 350 μ m) led chip 10.
When device forward operating current (20mA) is flowed, estimate the emission characteristics of led chip 10 between n type Ohmic electrode 106 and p type Ohmic electrode 107.Find redness (slightly orange) light that led chip 10 emissions have the 610nm emission center wavelength.
In the in fact whole surface of the luminescent layer 103 except the raised zones of n type Ohmic electrode 106, estimate the light emission.The near field pattern of the light of emission shows that the light of being launched by luminescent layer 103 has basically intensity uniformly except above-mentioned elevated regions.By the typical integration ball determine resin molded before be 40mcd by the brightness of the light of each chip emission.
Because current-diffusion layer 105 has broad-band gap and is made of low-resistance n type boron indium phosphorus, current-diffusion layer 105 is also as Window layer, and the light of being launched by luminescent layer 103 by this Window layer is sent to the outside.
Because n type Ohmic electrode 106 is arranged on the current-diffusion layer 105 that is made of low-resistance n type boron indium phosphorus, forward voltage (Vf) can be reduced to 2.3V.When applying the reverse current of 10 μ A, reverse voltage surpasses 8V.
＜example 2 〉
Next, will describe the present invention in detail, should be used as current-diffusion layer and coating layer based on the semiconductor layer of boron phosphide with reference to the exemplary boron phosphide semiconductor LED that comprises the semiconductor layer based on boron phosphide (content gradually variational layer) with boron composition gradient.
Fig. 2 is the schematic cross-section of the boron phosphide LED20 of example 2.Similar with Fig. 1, because Fig. 2 is a schematic diagram, the size of component layers (for example thickness proportion) can be different from actual numerical value.
Represent by identical reference number with the identical parts that in the boron phosphide LED10 shown in Fig. 1, adopt, and omission is to their detailed description.
In example 2, will be used for the boron phosphide LED10 of example 1 and by (Al
0.70Ga
0.30)
0.50In
0.50 Coating layer 104 is set to film coating layer (hereinafter, this layer is by same numeral 104 expressions) on selenium (Se) doped n type that P constitutes.On the film coating layer, form by unadulterated boron gallium phosphorus mixed crystal (B
αGa
1-αP:0＜α＜1) the content gradually variational layer 108 of Gou Chenging.
By selenium (Se) doped n type (Al
0.70Ga
0.30)
0.50In
0.50The film coating layer 104 that P constitutes by be used to form example 1 in last coating layer 104 (thickness: 5 μ m) the identical operation that adopts forms, and thickness that still will this layer is adjusted into 75nm.
By B
αGa
1-αThe content gradually variational layer 108 that P (0＜α＜1) constitutes is to adopt (C down at 750 ℃
2H
5)
3B/ (CH
3)
3Ga/PH
3System forms by decompression MOCVD.Thickness is adjusted into 740nm.Place, junction interface between this layer and film coating layer 104 is adjusted into 0.05 with boron (B) ratio of component (α) of content gradually variational layer 108.By with constant speed the vapor phase growth system being reduced (CH with the increase of film thickness as time goes by
3)
3The supply of Ga is also kept (C
2H
5)
3The supply of B, the boron ratio of component has linear composition gradient.Specifically, so form the content gradually variational layer, so that the boron of upper surface (B) ratio of component (α) becomes 1.0 (promptly forming boron phosphide (BP)).
Discovery is by B
αGa
1-αThe surface portion of the content gradually variational layer 108 that P constitutes has 8 * 10
18Cm
-3Carrier concentration and 6 * 10
-2The resistivity of Ω cm.
By adopting conventional ellipsometer, determine the refractive index and the extinction coefficient of content gradually variational layer 108, and the average bandgap of the content gradually variational layer 108 that is calculated by refractive index of determining and extinction coefficient is about 3.1eV.Especially, the room temperature band gap of finding (from the surface to the degree of depth of about 100nm) surface portion is about 4.0eV.Therefore, content gradually variational layer 108 can be used as the coating layer of Window layer with as current-diffusion layer.
Determine phosphorus (P) CONCENTRATION DISTRIBUTION of content gradually variational layer 108 on depth direction by conventional SIMS method.Do not observe a large amount of phosphorus (P) that are included in the content gradually variational layer 108 and pass the remarkable diffusion of film coating layer 104 to luminescent layer 103.
With with example 1 similar mode, in content gradually variational layer 108, be provided with in the heart and have circular flat figure (diameter: n type Ohmic electrode 106 about 130 μ m).Similar with example 1, on the whole back side of GaAs substrate 100, form the p type Ohmic electrode 107 that constitutes by the Au-Be alloy.The thickness that forms the Au-Be alloy film of p type Ohmic electrode 107 is about 2 μ m.
After forming n type Ohmic electrode 106, along with the identical direction in [1.-1.0] and [1.-1.0] crystal orientation of substrate 100, on (100)-GaAs single crystalline substrate 100, latticed line of cut is set, and along line of cut cutting substrate, thereby make led chip 20 with square-shaped planar figure (400 μ m * 400 μ m).
When forward current (20mA) is flowed, estimate led chip 20 between n type Ohmic electrode 106 and p type Ohmic electrode 107.Find that led chip 20 emissions have the red-orange light of the center emission wavelength of 610nm, this wishes.The radiative near field pattern that observes shows that the light by the emission of the zone except the n type Ohmic electrode 106 of the center that is arranged on each chip 20 has basically intensity uniformly.
Above result shows, according to the present invention, need not to resemble in routine techniques for what obtain that the diffusion of device operation current in light-emitting area adopt and on the surface of coating layer, have a mind to be provided with a plurality of little Ohmic electrodes, can in the wide zone of luminescent layer 103, obtain the diffusion of device operation current equably.The brightness of the light of the emission of determining by typical integrating sphere is about 44mcd.
In the content gradually variational layer 108 as current-diffusion layer and Window layer, band gap little by little reduces to luminescent layer 103 from the current-diffusion layer surface.Therefore, the forward voltage under the 20mA forward current is reduced to 2.3V, and finds that the reverse voltage under the 10 μ A reverse currents is 8V.
Industrial usability
LED of the present invention can be as the compound semiconductor LED of the III-V compound semiconductor luminescent layer with various emission wavelengths. Specifically, obtaining the LED of the present invention of high brightness can be with the LED that acts on display device, be used for for example LED of optical communication apparatus of electronic installation.
Claims (8)
1. compound semiconductor light-emitting diode, the coating layer that comprises the luminescent layer that constitutes by the III-V compound semiconductor, is arranged on the described luminescent layer and constitutes by the III-V compound semiconductor, and the current-diffusion layer that is arranged on the described coating layer and constitutes by the III-V compound semiconductor, it is characterized in that
Described current-diffusion layer is made of at least a semiconductor based on boron phosphide that is selected from aluminium, gallium and indium that comprises of conduction, and the room temperature band gap of described current-diffusion layer is wider than the room temperature band gap of described luminescent layer; And
Described coating layer constitutes by comprising at least a III-V compound semiconductor that is selected from aluminium, gallium and indium, and the room temperature band gap of described coating layer is wider than the room temperature band gap of described luminescent layer and is equaled or be narrower than the room temperature band gap of described current-diffusion layer.
2. according to the compound semiconductor light-emitting diode of claim 1, wherein said current-diffusion layer is by being selected from by component molecular formula B
αGa
γIn
1-α-γThe boron gallium indium phosphorus that P represents, by component molecular formula BP
1-δN
δThe expression boron nitrogen phosphorus and by component molecular formula B
αP
1-δAs
δAt least a formation in the boron arsenic phosphorus of expression, wherein 0＜α≤1,0≤γ＜1,0≤δ＜1.
3. according to the compound semiconductor light-emitting diode of claim 1, the difference between the room temperature band gap of wherein said current-diffusion layer and the room temperature band gap of described luminescent layer is 0.1eV or bigger.
4. according to the compound semiconductor light-emitting diode of claim 1, wherein said current-diffusion layer has the room temperature band gap of 2.8eV to 5.0eV.
5. according to the compound semiconductor light-emitting diode of claim 1, wherein said current-diffusion layer has more than or equal to 1 * 10
19Cm
-3The room temperature carrier concentration, smaller or equal to 5 * 10
-2The room temperature resistivity of Ω cm, and 50nm to 5, the thickness of 000nm.
6. according to the compound semiconductor light-emitting diode of claim 1, wherein said diode comprises the content gradually variational layer that has composition gradient and be made of the semiconductor based on boron phosphide, and described content gradually variational layer is as described current-diffusion layer and described coating layer.
7. according to the compound semiconductor light-emitting diode of claim 1, wherein said luminescent layer is by using component molecular formula Al
XGa
YIn
ZAlGaInP mixed crystal that P represents constitutes, 0≤X wherein, and Y, Z≤1, X+Y+Z=1, and in described current-diffusion layer and the described coating layer at least one is by wittingly its unadulterated semiconductor based on boron phosphide that adds impurity element not being constituted.
8. according to the compound semiconductor light-emitting diode of claim 6, wherein Ohm contact electrode is engaged to described current-diffusion layer or described content gradually variational layer.
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| PCT/JP2005/004894 WO2005088739A1 (en) | 2004-03-15 | 2005-03-14 | Compound semiconductor light-emitting diode |
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|---|---|---|---|---|
| US5008718A (en) * | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
| JPH114020A (en) | 1997-04-15 | 1999-01-06 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and semiconductor light-emitting device |
| JP3461112B2 (en) * | 1997-12-19 | 2003-10-27 | 昭和電工株式会社 | Group III nitride semiconductor light emitting device |
| JP2000068554A (en) * | 1998-08-21 | 2000-03-03 | Sharp Corp | Semiconductor light emitting element |
| US6346719B1 (en) * | 1999-06-24 | 2002-02-12 | Showa Denko Kabushiki Kaisha | AlGaInP light-emitting diode |
| JP2001144330A (en) | 1999-11-17 | 2001-05-25 | Showa Denko Kk | Semiconductor light-emitting diode |
| US6512248B1 (en) * | 1999-10-19 | 2003-01-28 | Showa Denko K.K. | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp |
| US6531716B2 (en) * | 2000-04-21 | 2003-03-11 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device and manufacturing method for the same |
| US6984851B2 (en) * | 2000-06-21 | 2006-01-10 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
| EP1393352B1 (en) * | 2001-05-28 | 2012-08-01 | Showa Denko K.K. | Semiconductor device, semiconductor layer and production method thereof |
| JP3700609B2 (en) | 2001-06-04 | 2005-09-28 | 昭和電工株式会社 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, LAMP AND LIGHT SOURCE |
| US6797990B2 (en) * | 2001-06-29 | 2004-09-28 | Showa Denko Kabushiki Kaisha | Boron phosphide-based semiconductor device and production method thereof |
| US6835962B2 (en) * | 2001-08-01 | 2004-12-28 | Showa Denko Kabushiki Kaisha | Stacked layer structure, light-emitting device, lamp, and light source unit |
| US6774402B2 (en) * | 2002-03-12 | 2004-08-10 | Showa Denko Kabushiki Kaisha | Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode |
| JP3567926B2 (en) * | 2002-04-16 | 2004-09-22 | 昭和電工株式会社 | pn junction type boron phosphide-based semiconductor light emitting device, method for manufacturing the same, and light source for display device |
| CA2427559A1 (en) * | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
| JP2004047760A (en) * | 2002-07-12 | 2004-02-12 | Hitachi Cable Ltd | Light emitting diode and epitaxial wafer therefor |
| US6759689B2 (en) * | 2002-08-07 | 2004-07-06 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
-
2005
- 2005-03-14 WO PCT/JP2005/004894 patent/WO2005088739A1/en active Application Filing
- 2005-03-14 CN CN2005800080715A patent/CN1934717B/en not_active Expired - Fee Related
- 2005-03-14 US US10/589,886 patent/US7732830B2/en not_active Expired - Fee Related
- 2005-03-14 KR KR1020067019236A patent/KR100818457B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005088739A1 (en) | 2005-09-22 |
| KR20070007105A (en) | 2007-01-12 |
| US20070164304A1 (en) | 2007-07-19 |
| US7732830B2 (en) | 2010-06-08 |
| KR100818457B1 (en) | 2008-04-02 |
| CN1934717A (en) | 2007-03-21 |
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