CN1924682A - Semi-interpenetrating, penetrating and reflective liquid crystal display panel - Google Patents
Semi-interpenetrating, penetrating and reflective liquid crystal display panel Download PDFInfo
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- CN1924682A CN1924682A CN 200610154400 CN200610154400A CN1924682A CN 1924682 A CN1924682 A CN 1924682A CN 200610154400 CN200610154400 CN 200610154400 CN 200610154400 A CN200610154400 A CN 200610154400A CN 1924682 A CN1924682 A CN 1924682A
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Abstract
This invention provides one LCD panel, whose array baseboard has one main silt and its relative layout convex block, transparent electrode layer shield grating line, wherein, the main silt is not overlapped with the grating line.
Description
Technical field
The present invention relates to display panels, relate more specifically to the structure of matrix base plate.
Background technology
Present LCD (hereinafter to be referred as LCD) mainly can be divided three classes: penetration LCD, reflective LCD, partly wear anti-LCD.Penetration LCD needs backlight module, and has the excessive and surround lighting of power consumption and show very much problems such as unclear when strong (under sunlight).Reflective LCD replaces transparent electrode layer with reflection electrode layer, does not need backlight module, but can't use under dark surrounds.Partly wear anti-LCD and have penetrating region and echo area simultaneously, can avoid the shortcoming of full penetration or total-reflection type.In order to increase the visual angle, and many quadrants vertical orientation technology of above-mentioned several LCD can being arranged in pairs or groups (Multi-domain Vertical Alignment, MVA), as PVA (Patterned Vertical Alignment) or ASV (Advanced Super V liquid crystal).Except wide viewing angle, MVA-LCD also has advantages such as high contrast, fast response time.The MVA-LCD element is at TFT matrix base plate or colored filter (color filter, hereinafter to be referred as CF) definition orientation projection (protrusion) on the substrate, and the control of the inclined design by orientation projection LCD alignment is to form two kinds, four kinds or more block, this alignment technique is called automatic block and forms (automatic domainformation, hereinafter to be referred as ADF) technology, comprise the pattern (as rib shape, zigzag and rhombus) of using multiple orientation projection, with the shape (as triangle, semicircle, square) of multiple orientation projection.
Fig. 1 is a vertical view of partly wearing the inferior pixel of anti-liquid crystal panel in the prior art, and matrix base plate has many common line 103A that are parallel to each other and many gate line 103B; And many data line 103C, itself and common line 103A and the vertical intersection of gate line 103B are to form pixel 101 a plurality of times.Inferior pixel 101 is formed with two vertical intersections of data line 103C by two common line 103A, and between two common line 103A a gate line 103B is arranged.Gate line 103B is connected to the thin film transistor (TFT) (not shown) to drive time pixel 101.In Fig. 1, inferior pixel 101 is divided into echo area 101A and penetrating region 101B, has reflection electrode layer 105A and transparent electrode layer 105B respectively.Has orientation projection 104B on each self-corresponding colored filter substrate (not shown) of echo area 101A and penetrating region 101B, in order to 108 orientations of control liquid crystal molecule.For increasing the orientation effect, be provided with main slit 104A between echo area 101A and the penetrating region 101B.On the other hand, be electrically connected reflection electrode layer 105A and the transparent electrode layer 105B that is separated by main slit 104A with connection electrode 105C.
As shown in Figure 1, as if being example with low temperature polycrystalline silicon (Low Temperature poly Silicon) technology, the main slit 104A and the gate line 103B of general matrix substrate are overlapping.Because the voltage differences of gate line 103B and common line 103A will cause liquid crystal to topple over the degree difference.As shown in Figure 2, be the result that said structure carries out the emulation of bright attitude liquid crystal arrangement.In Fig. 2, the display panels branch is made echo area 101A and penetrating region 101B, and liquid crystal layer 109B is folded between colored filter substrate 109A and the matrix base plate 109C.The thin transparent photomask glue-line 104C of thickness of liquid crystal layer that colored filter substrate 109A comprises transparency carrier 115A, colored filter 111, orientation projection 104B and makes echo area 101A.Matrix base plate 109C comprises transparency carrier 115B, is embedded in the common line 103A of multilayer circuit structure 113 and the reflection electrode layer 105A and the transparent electrode layer 105B of the gate line 103B and the superiors.Main slit 104A and gate line 103B between reflection electrode layer 105A and the transparent electrode layer 105B are overlapping.Liquid crystal molecule 108 marshallings among the figure in the dotted line circle 116A of close common line 103A, and misaligned near the liquid crystal molecule 108 in the dotted line circle 116B of gate line 103B and main slit 104A, cause liquid crystal efficient to reduce.
In sum, need badly at present under the situation that changes existing manufacturing process not significantly, the high working voltage that solves gate line reduces the problem of liquid crystal efficient.
Summary of the invention
For solving the problem that gate line reduces liquid crystal efficient, the invention provides a kind of transflective liquid crystal display panel, comprise matrix base plate, comprise the gate line that is arranged parallel to each other; The common line parallel with gate line; With the data line that is arranged parallel to each other, vertical with gate line, wherein gate line, common line and data line constitute a plurality of pixels; Wherein pixel comprises at least one penetrating region each time; At least one echo area; Thin film transistor (TFT) is electrically connected with gate line; Transparent electrode layer is positioned at penetrating region and is electrically connected with thin film transistor (TFT); Reflection electrode layer is positioned at the echo area; At least one main slit is between penetrating region and echo area; With at least one connection electrode, connect transparent electrode layer and reflection electrode layer; Wherein main slit and gate line are not overlapping; Colored filter substrate comprises the inferior pixel of the corresponding matrix base plate of colored filter; And liquid crystal layer, be folded between matrix base plate and the colored filter substrate.
The present invention also provides a kind of transflective liquid crystal display panel, comprises matrix base plate, comprises the gate line that is arranged parallel to each other; The common line parallel with gate line; With the data line that is arranged parallel to each other, it is vertical with gate line, and wherein gate line, common line and data line constitute a plurality of pixels; Wherein pixel comprises at least one penetrating region each time; At least one echo area; Thin film transistor (TFT) is connected with gate line; Transparent electrode layer is electrically connected with thin film transistor (TFT) and is positioned at penetrating region; Reflection electrode layer is positioned at the echo area; At least one main slit is between penetrating region and echo area; With at least one connection electrode, connect transparent electrode layer and reflection electrode layer; Transparent electrode layer shield grid polar curve wherein; Colored filter substrate comprises the inferior pixel of the corresponding matrix base plate of colored filter; And liquid crystal layer, be folded between matrix base plate and the colored filter substrate.
The present invention also provides a kind of penetrate through type liquid crystal display board, comprises matrix base plate, comprising: the gate line that is arranged parallel to each other; The common line parallel with gate line; With the data line that is arranged parallel to each other, it is vertical with gate line, and wherein gate line, common line and data line constitute a plurality of pixels; Wherein pixel comprises each time: at least one penetrating region; Thin film transistor (TFT) is connected with gate line; Transparent electrode layer is electrically connected with thin film transistor (TFT) and is positioned at penetrating region; At least one main slit is between penetrating region, in order to separate transparent electrode layer; With at least one connection electrode, in order to connect the transparent electrode layer of being separated by main slit; Transparent electrode layer shield grid polar curve wherein; Colored filter substrate comprises the inferior pixel of the corresponding matrix base plate of colored filter; And liquid crystal layer, be folded between matrix base plate and the colored filter substrate.
The present invention also provides a kind of reflecting type liquid crystal display panel, comprising: matrix base plate comprises the gate line that is arranged parallel to each other; The common line parallel with gate line; With the data line that is arranged parallel to each other, it is vertical with gate line, and wherein gate line, common line and data line constitute a plurality of pixels; Wherein pixel comprises each time: at least one echo area; Thin film transistor (TFT) is connected with gate line; Reflection electrode layer is electrically connected with thin film transistor (TFT) and is positioned at the echo area; At least one main slit is between the echo area, in order to separate reflection electrode layer; With at least one connection electrode, in order to connect the reflection electrode layer of being separated by main slit; Wherein main slit and gate line are not overlapping; Colored filter substrate comprises the inferior pixel of the corresponding matrix base plate of colored filter; And liquid crystal layer, be folded between matrix base plate and the colored filter substrate.
Description of drawings
Fig. 1 is a vertical view of partly wearing the inferior pixel of anti-liquid crystal panel in the prior art;
Fig. 2 is the result that the structure of Fig. 1 is carried out the emulation of bright attitude liquid crystal arrangement;
Fig. 3 A is the inferior pixel vertical view of the preferred embodiment of the present invention;
Fig. 3 B is the sectional view of A-A line among Fig. 3 A;
Fig. 4 A-4D is the display panels cut-open view of the preferred embodiment of the present invention;
Fig. 5 A-5D is the matrix base plate vertical view of the display panels of the preferred embodiment of the present invention.
The simple symbol explanation
1,101: inferior pixel 1A, 101A: echo area
1B, 101B: penetrating region 1C: storage capacitors
1D: transistor 3A, 103A: common line
3B, 103B: gate line 3B ': grid
3C, 103C: data line 4A, 104A: main slit
4B, 104B: orientation projection 4C, 104C: transparent photomask glue-line
5A, 105A: reflection electrode layer 5B, 105B: transparent electrode layer
5C, 105C: connection electrode 5D, 105D: conductive layer
6A: top electrode 6B: middle electrode
6C: bottom electrode 7A, 7B: through hole
8,108: liquid crystal molecule 9A, 109A: colored filter substrate
9B, 109B: liquid crystal layer 9C, 109C: matrix base plate
11,111: colored filter 13,113: multilayer circuit structure
15A, 15B, 115A, 115B: transparency carrier
116A: near the dotted line circle of common line 3A
116B: near the dotted line circle of gate line 3B and main slit 4A
17A, 17B: transparent insulating layer
17C: organic material layer
17D: planarization layer
18A: semiconductor layer
18B: drain electrode
18C: source electrode
18D: channel layer
19: black matrix"
Embodiment
Embodiment 1: the matrix base plate of transflective liquid crystal display panel
As shown in Figure 3A, be the inferior pixel vertical view of the preferred embodiment of the present invention.Inferior pixel 1 among the figure is intersected vertically by two common line 3A and two data line 3C and forms, and gate line 3B is folded between the two common line 3A.Above-mentioned common line 3A, data line 3C, gate line 3B can be conducting metal or alloy such as titanium aluminum titanium alloy, aluminium or titanium.It should be noted that time pixel 1 also can be intersected vertically by two gate line 3B and two data line 3C forms, and common line 3A is folded between two gate lines at this moment.How inferior pixel 1 defines, and how the inferior pixel region of looking closely corresponding colored filter substrate (not shown) defines.Inferior pixel 1 is divided into echo area 1A and penetrating region 1B two zones, and both separate with main slit 4A, has reflection electrode layer 5A and transparent electrode layer 5B separately.Separated reflection electrode layer 5A can be connected by at least one connection electrode 5C with transparent electrode layer 5B.Reflection electrode layer 5A can be aluminium, transparent electrode layer 5B can be indium tin oxide (ITO), indium-zinc oxide (IZO), cadmium tin-oxide (cadmium tin oxide, CTO), tin oxide (stannum dioxide, SnO
2) or zinc paste (zinc oxide, ZnO).Though connection electrode 5C has only one in the drawings, also can increase to according to circumstances more than two, and can adopt same material with transparent electrode layer 5B or reflection electrode layer 5A.
The storage capacitors 1C of inferior pixel 1 wherein electrode (not shown) and common line 3A joins, and its top electrode 6A can form simultaneously with data line 3C.Gate line 3B extends as the grid 3B ' that is positioned at the thin film transistor (TFT) 1D of echo area 1A.The semiconductor layer 18A that data line 3C connects extends the bottom electrode (not shown) of channel layer (not shown), source electrode 18C/ drain electrode 18B and storage capacitors 1C as transistor 1D.Channel layer, source electrode 18C/ drain electrode 18B and bottom electrode can form simultaneously, and its composition can be low temperature polycrystalline silicon, monocrystalline silicon or amorphous silicon.Then with grid 3B ' shielding channel layer, carry out source electrode 18C/ drain electrode 18B, and lightly doped drain (LDD) technology of bottom electrode again.
Fig. 3 B is among Fig. 3 A, the sectional view of A-A line.Be followed successively by source electrode 18C/ drain electrode 18B and lower electrode layer 6C on the transparency carrier 15B; Transparent insulating layer 17A; Gate line 3B and grid 3B ' and middle electrode layer 6B; Transparent insulating layer 17B; Upper electrode layer 6A; Organic material layer 17C; Reflection electrode layer 5A and transparent electrode layer 5B with the superiors.Transparency carrier 15B can be glass or plastic or other material.Transparent insulating layer 17A, 17B can be identical or different material, as silicon dioxide (SiO
2) or silicon nitride (SiN
x).Organic material layer 17C can be acryl resin.Shown in Fig. 3 B, reflection electrode layer 5A has through hole 7A and passes organic material layer 17C, and is electrically connected to upper electrode layer 6A.Upper electrode layer 6A has through hole 7B, is connected to the drain electrode 8B of transistor 1D.Middle electrode 6B is arranged in the middle of top electrode 6A and the bottom electrode 6C, have transparent insulating layer 17A in the middle of top electrode 6A and the middle electrode 6B, and have transparent insulating layer 17B in the middle of bottom electrode 6C and the middle electrode 6B, to form storage capacitors 1C.Except the structure of above-mentioned transistor 1D, these those of skill in the art select suitable thin film transistor (TFT) and corresponding manufacturing process from needing according to itself.
In Fig. 3 A and Fig. 3 B, the width of main slit 4A between 1 micron and 15 microns, is preferably 7 microns approximately.The width of connection electrode 5C between 1 micron and 15 microns, is preferably 6 microns approximately.The area of echo area 1A is about 0.4 times to 3 times of area of penetrating region 1B, and preferred situation is the area of the area of penetrating region 1B greater than echo area 1A.As penetrating region 1B during, need many a few road master's slit 4A that a bigger penetrating region 1B is divided into a plurality of less penetrating region 1B greater than the area of echo area 1A.In the preferred embodiment of the present invention, one time pixel 1 can have an echo area 1A and two penetrating region 1B, is electrically connected with main slit 4A separation and with connection electrode 5C to each other.
Can know that by Fig. 3 A, 3B the gate line 3B and the main slit 4A that find preferred embodiment are not overlapping, so liquid crystal molecule can improve significantly because of the misaligned problem of the high voltage of gate line.
Embodiment two: transflective liquid crystal display panel
Fig. 4 A is in the preferred embodiment of the present invention, the sectional view of transflective liquid crystal display panel.For the purpose of simplifying description, omit about transistorized description.In Fig. 4 A, display panels is divided into two echo area 1A and penetrating region 1B, and liquid crystal layer 9B is folded between matrix base plate 9C and the colored filter substrate 9A.Colored filter substrate 9A has transparency carrier 15A, colored filter 11 and wherein black matrix" 19, planarization layer 17D (overcoat), conductive layer 5D and orientation projection 4B.Transparency carrier 15A can be plastics or glass.Colored filter 11 can be the dyeing resin of three primary colors or other colors.Conductive layer 5D can be general common transparent metal oxide such as indium tin oxide (ITO), indium-zinc oxide (IZO), cadmium tin-oxide (cadmium tin oxide, CTO), tin oxide (stannum dioxide, SnO
2) or zinc paste (zinc oxide, ZnO).Though the orientation projection 4B of this embodiment is positioned on the colored filter substrate 9A, also can be formed on according to circumstances on the matrix base plate 9C, it can be the photoresist material, and shape is not limited to illustrated semisphere, also can be pyramid, square or shape that other are suitable.Mandatory declaration here be that for the optical path distance that the makes echo area 1A optical path distance near penetrating region 1B, this embodiment adopts the design of double flute (dual gap).Meaning promptly forms transparent photomask glue-line 4C on the colored filter substrate 9A of echo area 1A.As its name suggests, double flute refers to liquid crystal layer 9B the thickness of penetrating region 1B different with its thickness at echo area 1A (the former is preferably the latter's twice).In other embodiments of the invention, transparent photomask glue-line 4C can be formed on the matrix base plate 9C of echo area 40A.In other embodiments of the invention, need not form transparent photomask glue-line 4C.In this case, liquid crystal layer 9B is identical with the thickness of penetrating region 1B at echo area 1A, and this kind design is called single groove (single gap).
In Fig. 4 A, matrix base plate 9C has transparency carrier 15B; Be embedded in common line 3A and gate line 3B in the multilayer circuit structure 13; With reflection electrode layer 5A, the transparent electrode layer 5B of the superiors, between the two main slit 4A, with the connection electrode (not shown) that is connected both.The corresponding echo area 1A of reflection electrode layer 5A, the corresponding penetrating region 1B of transparent electrode layer 5B.Because the main slit 4A of this embodiment is not overlapping with gate line 3B, can avoid the operating voltage of gate line 3B to influence the Liquid Crystal Molecules Alignment of liquid crystal layer 9B.
Embodiment three: transflective liquid crystal display panel
Fig. 4 B is in the another preferred embodiment of the present invention, the sectional view of transflective liquid crystal display panel.Be that with the difference of Fig. 4 A partially transparent electrode layer 5B extends to echo area 1A, in order to shield grid polar curve 3B.Had at least one connection electrode (not shown) between the transparent electrode layer 5B of main slit 4A separation.Though it should be noted that partly be reflected electrode layer 5A shielding of the gate line 3B of Fig. 4 B, another part is shielded by transparent electrode layer 5B, gate line 3B also may be shielded by transparent electrode layer 5B fully.Because gate line 3B is shielded by transparency conducting layer 5B, so the operating voltage of gate line 3B will can not influence the Liquid Crystal Molecules Alignment of liquid crystal layer 9B.
Embodiment four: penetrate through type liquid crystal display board
In the foregoing embodiments, gate line 3B is not overlapping with main slit 4A, or all is applied to transflective liquid crystal display panel with transparency conducting layer 5B shield grid polar curve 3B.In addition, the present invention also can be applicable to penetrate through type liquid crystal display board such as Fig. 4 C, or is applied to reflecting type liquid crystal display panel such as Fig. 4 D.
The difference of Fig. 4 C and Fig. 4 A is that all viewing areas are penetration.Electrode layer on the matrix base plate 9C is transparent electrode layer 5B.For the multiple orientation of the liquid crystal molecule that makes liquid crystal layer 9B, the orientation projection 4B on colored filter substrate 9A, still need form at least one main slit 4A and separate transparent electrode layer 5B.Because transparent electrode layer 5B shield grid polar curve 3B, so the unlikely Liquid Crystal Molecules Alignment that influences liquid crystal layer 9B of the operating voltage of gate line 3B.
Embodiment five: reflection type liquid crystal panel
Fig. 4 D figure is transparent electrode layer 5B is replaced as reflection electrode layer 5A with the difference of Fig. 4 C.Similar with Fig. 4 C, as still to need at least one main slit 4A the to help liquid crystal layer 9B multiple orientation of liquid crystal molecule.Because gate line 3B and main slit 4A are not overlapping, so the unlikely Liquid Crystal Molecules Alignment that influences liquid crystal layer 9B of the operating voltage of gate line 3B.
Embodiment six: the matrix base plate of transflective liquid crystal display panel
Fig. 5 A-5D is the vertical view of the matrix base plate of the embodiment of the invention.Fig. 5 A and 5B are transflective liquid crystal display panels, and its common line 3A and the orthogonal crossing formation of data line 3C time pixel region 1 is divided into echo area 1A and penetrating region 1B again in the inferior pixel region 1.Echo area 1A has reflection electrode layer 5A, and penetrating region 1B has through electrode layer 5B, is electrically connected with connection electrode 5C between the two.Gate line 3B is connected to the transistor (not shown) that drives this pixel, and not overlapping with main slit 4A.Because the coverage of each orientation projection 4B is limited, if the area of penetrating region 1B is during greatly to a plurality of orientation projection of needs 4B, transparent electrode layer 5B need form the main slit 4A of correspondence, will form plural penetrating region 1B at this moment.
Embodiment seven: the matrix base plate of transflective liquid crystal display panel
In Fig. 5 B, there is the transparency conducting layer 5B of partial penetration district 1B to extend to echo area 1A with shield grid polar curve 3B.More than one of the connection electrode 5C of this embodiment is preferably two.Distance between connection electrode and the connection electrode can serve as preferred with 7 microns between 1 micron to 15 microns.The width of connection electrode 5C between 1 micron and 15 microns, serves as preferred with 6 microns approximately.In addition, as long as the density of connection electrode 5C is unlikely to reduce the function of main slit 4A or other elements, can use the connection electrode 5C of greater number.Embodiment thus much not, other embodiment of the present invention all can use many connection electrode.
Embodiment eight: the matrix base plate of penetrate through type liquid crystal display board
Fig. 5 C is the vertical view of penetrate through type liquid crystal display board, and in order to cooperate the position that is provided with of orientation projection 4B, two main slit 4A are divided into three penetrating region 1B (can increase according to circumstances) with transparent electrode layer 5B, its transparent electrode layer 5B shield grid polar curve 3B.
Embodiment nine: the matrix base plate of reflecting type liquid crystal display panel
Fig. 5 D is the vertical view of reflecting type liquid crystal display panel, and in order to cooperate the position that is provided with of orientation projection 4B, two main slit 4A are divided into three echo area 1A (can increase according to circumstances) with reflection electrode layer 5A, and its gate line 3B is not overlapping with main slit 4A.In sum, the display panels shown in Fig. 5 A-5D all can effectively improve the problem that gate line influences Liquid Crystal Molecules Alignment.
Though the present invention discloses as above with a plurality of preferred embodiments; yet it is not in order to limit the present invention; those of ordinary skill in the technical field under any; without departing from the spirit and scope of the present invention; when can changing arbitrarily and revise, thus protection scope of the present invention with claims the person of being defined be as the criterion.
Claims (10)
1. transflective liquid crystal display panel comprises:
Matrix base plate comprises:
Many the gate lines that are arranged parallel to each other;
The many common lines parallel with this gate line; With
Many the data lines that are arranged parallel to each other, vertical with this gate line, wherein this gate line, common line and data line constitute a plurality of pixels;
Wherein each this time pixel comprises:
At least one penetrating region;
At least one echo area;
Thin film transistor (TFT) is electrically connected with this gate line;
Transparent electrode layer is positioned at this penetrating region and is electrically connected with this thin film transistor (TFT);
Reflection electrode layer is positioned at this echo area;
At least one main slit is between this penetrating region and this echo area; With
At least one connection electrode connects this transparent electrode layer and this reflection electrode layer;
Wherein this main slit and this gate line are not overlapping;
Colored filter substrate comprises that a plurality of colored filters are to this time pixel that should matrix base plate; With
Liquid crystal layer is folded between this matrix base plate and this colored filter substrate.
2. transflective liquid crystal display panel as claimed in claim 1 also comprises a plurality of orientation projections that are arranged on this matrix base plate.
3. transflective liquid crystal display panel as claimed in claim 1 also comprises a plurality of orientation projections that are arranged on this colored filter substrate.
4. transflective liquid crystal display panel as claimed in claim 3 comprises that also the transparent photomask glue-line is between this orientation projection and this colored filter.
5. transflective liquid crystal display panel as claimed in claim 1, wherein this thin film transistor (TFT) is positioned at this echo area.
6. transflective liquid crystal display panel as claimed in claim 1, wherein this reflection electrode layer shields this gate line.
7. transflective liquid crystal display panel as claimed in claim 1, wherein this transparent electrode layer shields this gate line.
8. transflective liquid crystal display panel as claimed in claim 1, wherein pixel is made of two data lines and two common lines and gate line institute that intersects vertically each time, and wherein this gate line is between these two common lines.
9. transflective liquid crystal display panel as claimed in claim 1, wherein the width of this main slit is approximately between 1 micron and 15 microns.
10. transflective liquid crystal display panel as claimed in claim 1, wherein the width of this connection electrode is approximately between 1 micron and 15 microns.
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| CNB2006101544003A CN100405199C (en) | 2006-09-25 | 2006-09-25 | Semi-interpenetrating, penetrating and reflective liquid crystal display panel |
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| CNB2006101544003A CN100405199C (en) | 2006-09-25 | 2006-09-25 | Semi-interpenetrating, penetrating and reflective liquid crystal display panel |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100462787C (en) * | 2007-04-05 | 2009-02-18 | 友达光电股份有限公司 | Pixel structure, its display panel, photoelectric device and its production |
| TWI395030B (en) * | 2007-03-27 | 2013-05-01 | Au Optronics Corp | A pixel structure and a display panel and optoelectronic device comprising the pixel structure and the manufacturing methods thereof |
| CN104460129A (en) * | 2014-12-10 | 2015-03-25 | 深圳市华星光电技术有限公司 | Transflective liquid crystal display panel and liquid crystal display |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3794393B2 (en) * | 2003-03-13 | 2006-07-05 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| JP4167963B2 (en) * | 2003-10-09 | 2008-10-22 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| CN100349048C (en) * | 2003-11-25 | 2007-11-14 | 友达光电股份有限公司 | Uniform multi-domain perpendicular direction matching half penetrative half reflex thin film transistor liquid crystal display |
| TWI302685B (en) * | 2004-03-23 | 2008-11-01 | Au Optronics Corp | Mva pixel unit with high opening ratio |
| JP4586481B2 (en) * | 2004-09-30 | 2010-11-24 | ソニー株式会社 | Transflective LCD panel |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395030B (en) * | 2007-03-27 | 2013-05-01 | Au Optronics Corp | A pixel structure and a display panel and optoelectronic device comprising the pixel structure and the manufacturing methods thereof |
| CN100462787C (en) * | 2007-04-05 | 2009-02-18 | 友达光电股份有限公司 | Pixel structure, its display panel, photoelectric device and its production |
| CN104460129A (en) * | 2014-12-10 | 2015-03-25 | 深圳市华星光电技术有限公司 | Transflective liquid crystal display panel and liquid crystal display |
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