CN1923898A - Semiconductor equalizing press layer, medium conductivity silicon rubber and technology of preparing synthesis insulator - Google Patents
Semiconductor equalizing press layer, medium conductivity silicon rubber and technology of preparing synthesis insulator Download PDFInfo
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- CN1923898A CN1923898A CN 200610033509 CN200610033509A CN1923898A CN 1923898 A CN1923898 A CN 1923898A CN 200610033509 CN200610033509 CN 200610033509 CN 200610033509 A CN200610033509 A CN 200610033509A CN 1923898 A CN1923898 A CN 1923898A
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- rubber
- silicon rubber
- semiconductor
- press layer
- equalizing press
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Abstract
The invention discloses a semiconductor voltagesharing layer and middle-conductive silicon rubber and preparing method of ultra-high compressed end semiconductor layer device, which comprises the following parts: 100% 110-2 raw rubber system, 20-40% gas-phase white carbon black, 10-18% conductive carbon black reinforced filling system and 1-5% silicane coupling disposal agent.
Description
Technical field
The present invention relates to a kind of semiconductor equalizing press layer and middle conductivity silicon rubber, the invention still further relates in addition and adopt semiconductor equalizing press layer and middle conductivity silicon rubber to prepare the technology of extra-high voltage end semiconductor layer equalizing device.
Background technology
Existing extra-high voltage direct-current transmission engineering adopts extra-high voltage, remote, large vol, point-to-point power delivery mode.Engineering singly do not have the voltage range height (the highest running voltage reaches ± 824kV) characteristics, and it also is faced with complicated gas phase geographical environment such as heavy pollution, high height above sea level, icing.Therefore, compare with general ± 500kV DC power transmission line, the wide extra-high voltage direct-current transmission engineering of ± 800kV cloud composite insulator needs higher dielectric level and excellent ageing-resistant performance.± 800kV extra-high-speed the dc composite insulator of arbitrarily downgrading, its electrical strength sharply increases, and the Potential distribution distortion is serious, and visual corona and radio interference level are difficult to satisfy operating requirement.Probably can cause hardware corona, material surface continuous discharge, plug end and be accelerated aging and cause major defect such as internal injury if deal with improperly during design.
Summary of the invention
For improving insulator end electric field distribution, purpose of the present invention seeks also will start with from semiconductor material the piezometer ring configuration optimal state except carrying out the design of umbrella shape and piezometer ring targetedly, prepares a kind of semiconductor equalizing press layer and middle conductivity silicon rubber; Utilize the axial electric field of semiconductor equalizing press layer and middle conductivity silicon rubber composite insulator to distribute in the insulator end, protect insulator effectively.
To achieve these goals, the present invention adopts following technical scheme:
Semiconductor equalizing press layer and middle conductivity silicon rubber will adopt high-temperature silicon disulfide rubber to make, and its main constitutive material comprises 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, silane coupled treatment agent.The weight proportion of above-mentioned raw materials is 100 parts of 110-2 rubber systems, 20～40 parts of thermal silicas and 10～18 parts of graphitized carbon black reinforcing and filling systems, 1～15 part of silane coupled treatment agent.
Its preparation technology is: 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, silane coupled treatment agent are carried out sufficient blending dispersion and thermal treatment, after fully parking, in mill, add peroxide vulcanizing agent, promptly can be made into two kinds of resistivity and be respectively 10
6Ω .m and 10
3Mixing and the middle electroconductibility high-temperature silicon disulfide rubber of the semi-conductor high-temperature silicon disulfide rubber rubber unvulcanizate of Ω .m.
The technology of preparation extra-high voltage end semiconductor layer equalizing device
1, in advance by normal process injection sulfidization molding ± 800kV dc composite insulator finished product high-pressure side is bulb end 500mm length range in and contains gold utensil encapsulate position, vulcanizes layer of semiconductor silicon rubber equalizing press layer W1 along the injection of umbrella sheath surface.The volume specific resistance ρ of W1
VBe 10
6Ω .m, thickness are 3mm.
2, prepared ± 800kV dc composite insulator finished product high-pressure side (bulb end) encapsulate position to the first gamp is along conductivity silicon rubber equalizing press layer W2 in another layer of the umbrella cover of semiconductor equalizing press layer W1 surface injection sulfuration, the volume specific resistance ρ of W2
VBe 10
3Ω .m, thickness are 2mm.
3, adopt the composite insulator product of said structure, formed from plug, silicon rubber umbrella cover (ρ at high-pressure side
V=10
12Ω .m) → W1 silicon rubber semiconductor equalizing press layer (ρ
V=10
6Ω .m) → conduct electricity equalizing press layer (ρ in the W2 silicon rubber
V=10
3Ω .m) electric field distribution need drop to below the 2kV/cm through the strength of electric field of electrical field test composite insulator high-pressure side.
4, semiconductor equalizing press layer and middle conductivity silicon rubber will adopt high-temperature silicon disulfide rubber to make, and it is mainly formed and comprises 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, vulcanization system.Sizing material after injection sulfuration, the volume specific resistance ρ of semiconductor equalizing press layer W1
VBe controlled at 10
6Ω .m, then the volume specific resistance ρ of conductivity silicon rubber equalizing press layer W2 in Zhu She another layer
VFor being controlled at 10
3Ω .m.
The present invention reduces the magnetic field that high-pressure side produces by the resistivity of semi-conductor shape, reduces the generation of phenomenons such as hardware corona, material surface continuous discharge and prevent that the plug end is accelerated aging.
Embodiment
1, semiconductor equalizing press layer and middle conductivity silicon rubber preparation is adopted and is carried out the mixing preparation technology of sizing material at Banbury mixer and kneader.Add and comprise that 110-2 rubber, thermal silica and component materials such as graphitized carbon black reinforcing and filling system, silane coupled treatment agent carry out sufficient blending dispersion and thermal treatment, after fully parking, in mill, add peroxide vulcanizing agent, promptly can be made into two kinds of resistivity and be respectively 10
6Ω .m and 10
3Mixing and the middle electroconductibility high-temperature silicon disulfide rubber of the semi-conductor high-temperature silicon disulfide rubber rubber unvulcanizate of Ω .m.
2, according to ordinary student production art injection moulding vulcanization on rubber injection machine good ± the 800kV dc composite insulator, forming a layer resistivity at the insulator high-pressure side is 10
12The silicon rubber umbrella sheath structure of Ω .m.
3, in ready-made in advance ± 800kV dc composite insulator finished product high-pressure side encapsulate 500mm length range, promptly contain gold utensil encapsulate position along umbrella sheath surface injection sulfuration one deck W1 semiconductor silicon rubber equalizing press layer, its volume specific resistance ρ with mould 1
VBe 10
6Ω .m, gauge control is 3mm.
4, vulcanize in another layer W2 conductivity silicon rubber equalizing press layer at ready-made ± 800kV dc composite insulator finished product high-pressure side encapsulate position to the first gamp along the umbrella cover surface injection of semiconductor equalizing press layer W1 with mould 2, gauge control is 2mm.
Product is after the injection sulfuration, and high-pressure side should drop to below the 2kV/cm through its strength of electric field of electrical field test.
Embodiment 2～5 sees the following form according to the method preparation of embodiment 1
| Numbering | Material name | Formula ratio part | |||
| Implement 2 | Implement 3 | Implement 4 | Implement 5 | ||
| (1) | 110-2 rubber system | 100 | 100 | 100 | 100 |
| (2) | Thermal silica | 20 | 30 | 35 | 40 |
| (3) | The graphitized carbon black reinforcing and filling system | 10 | 12 | 16 | 18 |
| (4) | Silane coupled treatment agent | 1 | 5 | 10 | 15 |
Claims (3)
1, semiconductor equalizing press layer and middle conductivity silicon rubber, it will adopt high-temperature silicon disulfide rubber to make, and it is characterized in that: its main constitutive material comprises 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, silane coupled treatment agent; The weight proportion of above-mentioned raw materials is 100 parts of 110-2 rubber systems, 20～40 parts of thermal silicas and 10～18 parts of graphitized carbon black reinforcing and filling systems, 1～15 part of silane coupled treatment agent.
2, semiconductor equalizing press layer according to claim 1 and middle conductivity silicon rubber, it is characterized in that: its preparation technology is: 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, silane coupled treatment agent are carried out sufficient blending dispersion and thermal treatment, after fully parking, in mill, add peroxide vulcanizing agent, promptly can be made into two kinds of resistivity and be respectively 10
6Ω .m and 10
3Mixing and the middle electroconductibility high-temperature silicon disulfide rubber of the semi-conductor high-temperature silicon disulfide rubber rubber unvulcanizate of Ω .m.
3, adopt described semiconductor equalizing press layer of claim 1 and middle conductivity silicon rubber to prepare the technology of extra-high voltage end semiconductor layer equalizing device, it is characterized in that: (1), in advance by normal process injection sulfidization molding ± 800kV dc composite insulator finished product high-pressure side is in the bulb end 500mm length range and contains gold utensil encapsulate position, along umbrella sheath surface injection sulfuration layer of semiconductor silicon rubber equalizing press layer W1, the volume specific resistance ρ of W1
VBe 10
6Ω .m, thickness are 3mm;
(2), prepared ± 800kV dc composite insulator finished product high-pressure side encapsulate position to the first gamp is along conductivity silicon rubber equalizing press layer W2 in another layer of the umbrella cover of semiconductor equalizing press layer W1 surface injection sulfuration, the volume specific resistance ρ of W2
VBe 10
3Ω .m, thickness are 2mm;
(3), adopt the composite insulator product of said structure, formed from plug, silicon rubber umbrella cover (ρ at high-pressure side
V=10
12Ω .m), W1 silicon rubber semiconductor equalizing press layer (ρ
V=10
6Ω .m), conduct electricity equalizing press layer (ρ in the W2 silicon rubber
V=10
3Ω .m) electric field distribution need drop to below the 2kV/cm through the strength of electric field of electrical field test composite insulator high-pressure side;
(4), semiconductor equalizing press layer and middle conductivity silicon rubber will adopt high-temperature silicon disulfide rubber to make, it is mainly formed and comprises 110-2 rubber system, thermal silica and components such as graphitized carbon black reinforcing and filling system, vulcanization system; Sizing material after injection sulfuration, the volume specific resistance ρ of semiconductor equalizing press layer W1
vBe controlled at 10
6Ω .m, then the volume specific resistance ρ of conductivity silicon rubber equalizing press layer W2 in Zhu She another layer
VFor being controlled at 10
3Ω .m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610033509 CN1923898A (en) | 2006-02-10 | 2006-02-10 | Semiconductor equalizing press layer, medium conductivity silicon rubber and technology of preparing synthesis insulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610033509 CN1923898A (en) | 2006-02-10 | 2006-02-10 | Semiconductor equalizing press layer, medium conductivity silicon rubber and technology of preparing synthesis insulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1923898A true CN1923898A (en) | 2007-03-07 |
Family
ID=37816733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610033509 Pending CN1923898A (en) | 2006-02-10 | 2006-02-10 | Semiconductor equalizing press layer, medium conductivity silicon rubber and technology of preparing synthesis insulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1923898A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101654558B (en) * | 2008-09-19 | 2011-06-29 | 江苏天辰硅材料有限公司 | Insulator silicon rubber and method for preparing same |
| CN101707105B (en) * | 2009-11-16 | 2015-08-05 | 郭道林 | Tangible plug type lightning arrester |
| CN109633313A (en) * | 2018-12-18 | 2019-04-16 | 米艾西(福建)测控技术有限公司 | A kind of insulating cement fill method in load tray |
| CN112011183A (en) * | 2020-09-04 | 2020-12-01 | 江苏英亚高分子材料科技有限公司 | Self-heating silicone rubber composite material and application thereof in insulator |
-
2006
- 2006-02-10 CN CN 200610033509 patent/CN1923898A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101654558B (en) * | 2008-09-19 | 2011-06-29 | 江苏天辰硅材料有限公司 | Insulator silicon rubber and method for preparing same |
| CN101707105B (en) * | 2009-11-16 | 2015-08-05 | 郭道林 | Tangible plug type lightning arrester |
| CN109633313A (en) * | 2018-12-18 | 2019-04-16 | 米艾西(福建)测控技术有限公司 | A kind of insulating cement fill method in load tray |
| CN109633313B (en) * | 2018-12-18 | 2020-11-13 | 米艾西(福建)测控技术有限公司 | Method for filling insulating glue in load box |
| CN112011183A (en) * | 2020-09-04 | 2020-12-01 | 江苏英亚高分子材料科技有限公司 | Self-heating silicone rubber composite material and application thereof in insulator |
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