CN1922522A - Power optimization for operation of optoelectronic device with thermoelectric cooler - Google Patents

Power optimization for operation of optoelectronic device with thermoelectric cooler Download PDF

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Publication number
CN1922522A
CN1922522A CN 200580005363 CN200580005363A CN1922522A CN 1922522 A CN1922522 A CN 1922522A CN 200580005363 CN200580005363 CN 200580005363 CN 200580005363 A CN200580005363 A CN 200580005363A CN 1922522 A CN1922522 A CN 1922522A
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temperature
laser
module
electric current
optoelectronic device
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詹姆斯·斯特沃特
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Finisar Corp
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Finisar Corp
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Abstract

A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50 DEG C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50 DEG C with a temperature range of from about -5 DEG C to about 75 DEG C allows a maximum current of about 300 mA.

Description

Be used to have the power optimization of work of the optoelectronic device of thermoelectric (al) cooler
Technical field
The present invention relates to the field of optoelectronic module, and more specifically, relate to the amount that minimizes by the power that optoelectronic module consumed that uses thermoelectric (al) cooler (TEC) control temperature.
Background technology
Optical fiber technology is used for transferring voice and data-signal more and more.As transmission medium, optical fiber provides some advantages that surmount the traditional electrical communication technology.For example, light signal allows high transfer rate and very high bandwidth ability.And light signal has resistibility to electromagnetic interference (EMI), and electromagnetic interference (EMI) can be disturbed electric signal and can make the electric signal degradation.Light signal also can transmission on big distance, and does not have typically the loss of signal that is associated with electric signal on the copper cash.
Although optical communication provides some advantages, light has still been proposed some as transmission medium implemented challenge.In particular, when receiving, must convert the form of electricity to by the light signal data carried by data by equipment such as the network switch.On the contrary, when data transmission during to optical-fiber network, it must become light signal from electrical signal conversion.The transmission of light signal is typically by using photonic device such as transceiver module to realize at the two ends of optical fiber cable.Each transceiver module typically comprises generating laser circuit that can convert the electrical signal to light signal and the optical receiver that the light signal that is received can be changed the telegram in reply signal.
These transceiver modules dock via the connectivity port of compatibility main process equipments next and such as principal computer, switching hub, network router, switch box, computing machine I/O (I/O) etc.In some applications, it is desirable to physical size miniaturization, to increase the number of the transceiver module that docks with main process equipment with transceiver module.By increasing the number of connectivity port, main process equipment holds higher number in given physical space network connects.In some cases, may it is desirable to, transceiver module is a hot swappable, that is, allow to insert and to extract transceiver module and need not power cutoff from main process equipment.
In order to realize these multiple purposes, and guarantee the compatibility between the different manufacturers, the world of employing and industrial standard limit the physical size and the shape of optical transceiver module.For example, a group light component manufacturer has been developed and has been used to be called one group of standard that little form factor can plug the optical transceiver module of (SFP) transceiver.Except the details of electrical interface, this standard also defines physical size and the shape that is used for the SFP transceiver module, and the connectivity port or the module cage (cage) that are associated with the correspondence of main process equipment.These standards have been guaranteed the interoperability between the product of different manufacturers.Recently, the little form factor of 10Gb/s can plug (XFP) standard with all with size, draw relevant corresponding details such as electric current (current draw) and be used.
Along with reducing and the increase of data rate of the transceiver encapsulation of satisfying SFP or XFP standard, the heat that is generated by transceiver has become a problem.Cooling mechanism or cooling body alleviate the too much heat that is produced by laser instrument in these transceivers and laser diode.For example, 10G bit transceiver need usually cooling mechanism 15-30 degree centigrade (℃) the standard temperature scope in work, and the transceiver that is used for than the low velocity light transmission can not need heat radiation.Yet the use of cooling mechanism has increased the complicacy and the cost of assembling transceiver, has reduced the space that the light that can be used for transceiver originally and electric work can parts, and has increased the amount that makes the required power of transceiver work.
One type heat radiation or cooling body are thermoelectric (al) cooler (TEC).TEC remains on predetermined point with the temperature of the specific features of transceiver or transceiver.If these parts overheat, electric current flows to produce cooling with a direction in TEC.If these parts became cold, electric current flows with other direction and TEC plays the effect of well heater.Unfortunately, TEC is needing much bigger power during the refrigerating mode than during heating mode.Along with the increase of module temperature, the power that is used to cool off that TEC consumes is index and increases.
Fig. 1 illustrates curve Figure 10, and this figure is electric current the schematically showing with respect to the relation between the temperature difference between the hot and cold side of TEC (the Δ T of TEC) of being drawn by TEC as shown in the reference numeral 12.The zero energy thermometer that is used for TEC is shown " 0 ", and promptly the temperature between the hot side of the cold-peace of this TEC does not have difference, as shown in the reference numeral 14.Curve 16 from curve Figure 10 can find out, when the Δ T of TEC becomes when negative, the amount of the electric current that is used to heat that is drawn by TEC only rises a little.This is because TEC begins with heating mode work, and draws a spot of electric current.Yet when Δ T becomes when positive, the amount of the electric current that is used to cool off that is drawn by TEC very promptly rises.This is real, because TEC is much higher as refrigeratory as the efficiency ratio of well heater.
In transceiver application, the heat susceptor of TEC (hot side) is attached to the shell of transceiver usually, and laser instrument is attached to the top of TEC (cold side).For this common setting, when the laser instrument that is lower than expectation when transceiver shell temperature was provided with temperature, TEC was in heating mode, and opposite, and when transceiver shell temperature was higher than laser instrument temperature is set, TEC was in refrigerating mode.For TEC is worked efficiently, it is desirable on wide transceiver shell temperature range, make TEC with heating mode work.
Be designed so that there is a problem in laser instrument at the current transceiver module of working to about 30 ℃ temperature range from about 15 ℃.Because the working environment of typical transceiver module, promptly number of modules is settled close to each otherly, and the work shell temperature of transceiver is considerably beyond the laser temperature scope of expectation, and this TEC that need control laser temperature is with the lower refrigerating mode running of efficient.This a problem occurred, because comprise that the total amount of the available power of transceiver module of TEC is limited, and spends a large amount of power and is cooled to the laser instrument that keeps transceiver and is not more than 30 ℃ and does not expect.
A relevant problem is the bandwidth that transceiver module can be used in given temperature range.Be known in the art, can come channel spacing tuning by regulating temperature.For example, for the channel spacing of about 100GHz, move the about 10 ℃ temperature drift of needs at interchannel.For the transceiver that is designed in the work of several DWDM channel, be necessary to increase the temperature controlling range of TEC, so that necessary thermal tuning to be provided.For in single 100GHz channel work, typically need about 10 ℃ temperature controlling range.Yet,, need about 20 ℃ temperature controlling range in order on two 100GHz channels, to work.Use for multichannel, optimize the laser temperature scope and become even more crucial so that the TEC power consumption is minimized.
Summary of the invention
According to the above, it is desirable to, make thermoelectric (al) cooler (TEC) on wide module temperature range with the higher refrigerating mode work of efficient, so that the power consumption of module (TEC) minimizes.If it is tuning to module at a plurality of channels to allow that module can be worked on the temperature range of expansion, also is useful.This allows relatively large data transmission and still keeps low total power consumption.
The invention describes a kind of optoelectronic device, it is allowing TEC to work in the temperature range of most of the time with heating mode work.As a result, be used for optoelectronic device draw electric current the expansion temperature range on remain under the maximal value of qualification.In an exemplary embodiment, keeping blocks current at 300mA or when being lower than 300mA, module can worked to about 75 ℃ temperature range from about-10 ℃.This realizes by the laser works temperature being set to about 50 ℃ in a kind of configuration.By making laser instrument, can remain on the higher relatively heating mode of efficient in the most of the time in order to the TEC that keeps laser temperature in the temperature work that improves.
In another configuration, the working temperature of laser instrument can be enhanced, and makes TEC only with heating mode work.In arbitrary situation, the result is the electric current that the draws optoelectronic module efficiently less than existing module, keeps the efficient of laser instrument simultaneously.
These and other purpose and feature of the present invention will become by following description and claims and more fully manifest, or can be known by following illustrated practice of the present invention.
Description of drawings
In order further to illustrate above-mentioned and other advantage and feature of the present invention, will provide of the present invention with reference to illustrated specific embodiment of the present invention in the accompanying drawings and more specifically describe.Should be understood that these accompanying drawings have only described exemplary embodiments of the present invention, therefore should not think limitation of the scope of the invention.To utilize additional characteristic and details to describe and explain the present invention by using accompanying drawing, in the accompanying drawings:
Fig. 1 shows the TEC electric current with respect to temperature contrast (the Δ T between the hot and cold side of TEC TEC) curve map;
Fig. 2 is the block diagram of an embodiment of optoelectronics transceivers;
Fig. 3 shows the block diagram of circuit of the Laser emission actuator temperature of the optoelectronics transceivers that is used for control chart 2;
What Fig. 4 showed the module that is used for standard and laser temperature that optimize draws the curve map of electric current with respect to the shell temperature of module;
Fig. 5 show two temperature places that allow wavelength tuning module draw the curve map of electric current with respect to the shell temperature of module; And
Fig. 6 shows the minimized a kind of exemplary method of power consumption that is used for making optoelectronic module.
Embodiment
One exemplary embodiment of the present invention is pointed to and is alleviated the problem of drawing too much TEC electric current when higher temperature for the parts of cooling optoelectronic device or module.The shell temperature that these embodiment allow to be used for device or module increases, and remains on the higher heating mode of efficient to allow TEC, rather than enters the lower refrigerating mode of efficient.
This is more favourable than existing temperature control system because existing temperature control system manages to optimize the parts of optoelectronic device, as the performance of the laser instrument in the transceiver module on a temperature range.Such existing system is attempted the design temperature control system laser instrument is controlled to the temperature of optimization.Unfortunately, this has caused so transceiver system, and wherein temperature control system power is too high, thereby can't be used for little form factor, pluggable transceiver and use, can plug (XFP) module such as, but not limited to the little form factor of 10 gigabits.
The way of one exemplary embodiment of the present invention is just in time opposite, and it determines to make by temperature control system and thereby the minimized laser temperature scope of amount of the power that uses of module whole.This has caused on than the bigger temperature range of existing optoelectronic module efficient to use power much higherly.
In addition, one exemplary embodiment of the present invention provides the several advantages that are better than typically being operated in from about 15 ℃ of existing optoelectronic modules to about 30 ℃ temperature range.For example, along with increasing existing module is encapsulated into distributing board (patch panel), the temperature of intralamellar part trends towards raising.This TEC work that need make existing module is to reduce the module temperature.Because TEC is much lower in refrigerating mode efficient, but keep 30 ℃ the frequent current ratio that needs of maximum laser actuator temperature bigger at the electric current that application standard lower module integral body is allowed to draw.No matter existing standard how, when TEC was cooled to laser instrument threshold level below 30 ℃, existing optoelectronic module trended towards drawing too much electric current.The present invention makes TEC overcome this problem in the most of the time with heating mode work rather than with the lower refrigerating mode work of efficient at least by making laser instrument in the temperature work that improves.This electric current that has caused this optoelectronic module to be drawn on than the big temperature range of existing optoelectronic module is lower than the threshold value of qualification.
The another one advantage that provides is, for the power consumption or the current capacity of expectation, optoelectronic module is worked on the temperature range of an expansion.This is by allowing individual module in a plurality of channel data to selected channel tuner laser temperature.The module that can work on several channels allows manufacturer to reduce the quantity that covers the needed parts of a certain range of channels, and minimizing is used for the catalogue that those arrange the people of these systems.
Fig. 2 illustrates schematically showing of optoelectronics transceivers 100.Transceiver 100 is minimum to comprise that transmitting and receiving device circuit paths, one or more power connects 102 and be connected 104 with one or more ground connection.In addition, transceiver 100 comprises receiver optical sub-assembly (ROSA) 106, and it comprises mechanical type fiber-optical socket and coupling optical device, and photodiode and preamplifier circuit.ROSA 106 is connected to post amplifier integrated circuit 108 again, its function is to receive relatively little signal and amplification and limit these signals to produce the digital and electronic output of even amplitude from ROSA 106, and this output is connected to external circuit by RX+ and RX-pin one 10.Post amplifier circuit 108 provides the digital output signal that is known as the input or the loss of signal, and it has indicated the light input that has or do not exist proper strength.Except the connector that can stretch out from cover, all parts of transceiver 100 can be arranged in containment vessel or cover 112.
The cover that is fit to that comprises metal, plastics, ceramic box and other shells or cover structure is commonly known in the art.In one embodiment, containment vessel 112 is as follows: width 3cm or littler; Length 6.5cm or littler; And height 1.2cm or littler.Gigabit interface converter (GBIC) standard (SFF-8053 GBIC standard 5.5 editions) needs the yardstick of module cage to be similar to 3cm * 6.5cm * 1.2cm.Thus, the containment vessel 112 of this embodiment meets the profile demand of GBIC standard.
In another embodiment, the physical size of shell 112 is: 0.54 inch of width or littler; 2.24 inches of length or littler; And highly 0.34 inch or littler.The pluggable multi-source agreement of little form factor (SFP MSA) requires the yardstick of the module cage of adaptation to be similar to 0.54 " * 2.24 " * 0.34 ".Thus, the module cage among this embodiment meets the profile demand of SFP standard.Notice that the present invention is not limited to above-mentioned form factor demand.Shell 112 can also be observed the XFP standard.In addition, have rights and interests of the present disclosure to it will be understood by those skilled in the art that the present invention is suitable for various existing or form factor to be determined, comparable illustrate here little or big of wherein some still arranged.
The radiating circuit of transceiver 100 can comprise transmitter optical subassembly (TOSA) 114 and laser driver integrated circuit 116, obtains the signal input from TX+ and TX-pin one 18.TOSA 114 comprises mechanical type fiber-optical socket and coupling optical device, and thermoelectric (al) cooler (TEC) and laser diode or LED.Laser driver circuit 116 provides AC to drive and the DC bias current to laser instrument.Obtain the signal input that is used for driver from the I/O pin (not shown) of transceiver 100.In other embodiments, TEC is outside TOSA 114.In other other embodiment, TEC is integrated in laser instrument transistor outline (TO) encapsulation or in other individual laser package.
In addition, optoelectronics transceivers 100 comprises that thermoelectric (al) cooler (TEC) driver 120 and unshowned adjunct circuit are used to control TOSA 114 temperature.The embodiment and the adjunct circuit of TEC driver 120 are described in more detail below in conjunction with Fig. 3.
Also illustrate in Fig. 2 and can comprise one, the microprocessor 130 of two or more chips, it is arranged to the work of control transceiver 100.PIC16F873A, PIC16F8730 and the PIC16F8718 position CMOS FLASH microcontroller of suitable microprocessor including, but not limited to making by Microship Technology company limited.Microprocessor 130 is coupled control signal being provided to post amplifier 108 and laser driver 116, and these parts and ROSA 106 and TOSA 114 provide the feedback signal that is back to microprocessor 130.For example, microprocessor 130 provides signal (for example, biasing and amplitude control signal) with the DC bias current level and the AC modulation level of control laser driver circuit 116 (it controls the extinction ratio (ER) of optical output signal thus), and post amplifier circuit 108 provides input to export microprocessor 130 to exist or do not exist the light of proper strength to import with indication.
Bias current level influences the light output wavelength of transceiver 100.Those skilled in the art recognize that the increase of bias current changes the temperature of the active area of chip of laser.More specifically, along with bias current increases, the power dissipation of chip of laser also increases.And along with the increase of dissipated power in the chip of laser, having fixedly, the temperature of the chip of laser of thermal resistance also increases.Even it also is like this that the temperature of chip of laser base is typically controlled by TEC 120.
The temperature of each parts of transceiver 100 and/or other physical conditions can obtain by the sensor that microprocessor 130 is coupled in use.In certain embodiments, the condition of light link also can use sensor to obtain.
Except these control function, also combine sometimes with these control function, also there are many other tasks, can handle by microprocessor 130.These tasks comprise but unnecessary be confined to following:
Installation function.This is usually directed in factory the required adjusting made to the part basis at part, to allow the variation such as the characteristics of components of laser diode threshold current.
Identification.This relates to general-purpose storage (for example, the EEPROM) storage of interior identification code.Additional information also can be stored in such as subassembly revision and factory test data and to be used in the general-purpose storage discerning.
Eye safety and generic failure detect.These functions are in order to discerning unusual and potential dangerous running parameter, and if in order to it is reported to main process equipment and/or suitable then carry out the laser instrument shutdown.Sensor can be in order to discern so unusual or potential dangerous running parameter.
The receiver input optical power is measured.This function is in order to measure input optical power and can store the report of this measurement in storer.
The laser diode drive current.This function is in order to be provided with the Output optical power level of laser diode.
Laser diode temperature monitors and control.In one embodiment, temperature controller (for example, thermoelectric (al) cooler (TEC)) be arranged on TOSA 114 inside or near, be used to control the temperature of generating laser wherein.In this embodiment, microprocessor 130 is responsible for control signal is provided to temperature controller, remains on by in the shell temperature range that curve map was limited shown in Fig. 4 with the temperature with TOSA 114.
Continuation is with reference to figure 2, and transceiver 100 can have serial line interface 132, is used for communicating by letter with main process equipment.Main process equipment described herein refers to that transceiver is attached to link cards on it and/or transceiver is its main system computing machine that provides light to connect.Host computer system can be the host computer system and the equipment of storage (NAS) equipment, storage area network (SAN) equipment, photoelectron router and the other types of computer system, network attachment.
In certain embodiments, optoelectronics transceivers 100 comprises the integrated circuit controller that can carry out above-mentioned some functions of listing.For example, integrated circuit controller is carried out the task that identification and eye safety and generic failure detect, and microprocessor is provided to the control signal of temperature controller, and can carry out other tasks.
In addition, optoelectronics transceivers also can be included in the TX that describes in the GBIC standard (SFF-8053) and forbids 134 and TX fault 136 pins.In the GBIC standard, TX forbids that pin one 34 allows transmitters to be closed by main process equipment, and TX fault pin one 36 is the indicators that have certain fault condition to the main process equipment indication in laser instrument or the laser driver circuit that is associated.Also can relevant be coupled to the loss of signal (LOS) pin one 38 of microprocessor 130.LOS pin one 38 permission microprocessors 130 for example cut out the laser instrument among the TOSA 114 when carrier signal is lost.
Fig. 3 shows the part of the temperature-control circuit 140 of transceiver 100.Temperature-control circuit 140 is coupled to TOSA 114.In certain embodiments, TOSA 114 comprises laser assembly 142 (for example, the encapsulation of laser transister profile), and it comprises generating laser (for example, edge-emission laser diode or vertical cavity surface emitting diode) again, ought be applied in laser bias current I Laser biasThe time it is activated.In Fig. 3, also show the laser temperature sensor 144 and the thermoelectric (al) cooler (TEC) 146 that are coupled to laser assembly 142.In other some embodiment, laser temperature sensor 144 and/or TEC 146 are integrated in the laser assembly 142.In other other embodiment, laser temperature sensor 144 and/or TEC 146 are outside TOSA 114.
In certain embodiments, laser temperature sensor 144 is thermistors.Can also use any other device that is suitable for the Laser Measurement diode temperature.The example of this device can be including, but not limited to following example, silicon IC temperature sensor, thermopair, resistive temperature detector (RTD) and well known to a person skilled in the art other this devices.Laser temperature sensor 144 produces the signal (V that changes as the function of the temperature of laser diode TL).As mentioned above, and as known to those skilled in the art, the wavelength of the light signal that produces of laser diode changes as the function of the temperature of laser diode.Thereby in other embodiments, the sensor of measuring light signal wavelength can directly be replaced by laser temperature sensor 144.In other other embodiment, use the device that the condition of work of the laser diode that changes as the function of the temperature of laser diode is measured, replace laser temperature sensor 144.
Still with reference to figure 3, laser driver circuit 116 provides AC driving power and DC bias current I Laser biasTo laser assembly 142, to activate generating laser and the AC modulation that laser assembly is set.Microprocessor 130 is by this aspect of bias control signal and amplitude control signal control laser driver circuit 116.Laser driver circuit 116 also transmits and I Laser biasProportional voltage V (I Laser bias), make microprocessor 130 can monitor the I that can change indirectly owing to condition of work such as temperature Laser biasActual value.In certain embodiments, the signal that microprocessor 130 monitors from diode backlight (being also referred to as monitor photodiode) replaces monitoring (or also monitoring) voltage V (I Laser bias).In certain embodiments, microprocessor 130 uses the signal that is monitored to determine DC bias current I Laser biasAdjustment.
Also can randomly additional input be provided to microprocessor 130 by environment temperature sensor 150, environment temperature sensor 150 is measured the environment temperature around the TOSA 114, and produces the signal (V that changes as the function of environment temperature that is used for microprocessor 130 TA).Though laser temperature sensor 144 preferably is placed near the generating laser, but because laser temperature sensor 144 physically separates with generating laser, so the temperature that reads from laser temperature sensor 144 is different from the actual temperature of generating laser.As a result, temperature and the signal V thereof that reads from laser temperature sensor 144 TLAs the function of ambient temperature and change.By reception environment temperature signal V TA, microprocessor 130 can the Temperature Influence of compensate for ambient temperature to reading from the laser temperature sensor.
Except V (I Laser bias), V TLAnd V TASignal, microprocessor 130 are also by the input of serial interface circuit 132 (Fig. 2) reception from main process equipment.In certain embodiments, microprocessor 130 uses the information of collecting from main frame device, laser driver circuit 116 and environment temperature sensor 150 to generate the TEC command signal of simulation so that the temperature of the generating laser the laser assembly 142 to be set.Especially, microprocessor 130 is based on following input: from the V (I of laser driver circuit 116 Laser bias), from the V of laser temperature sensor TL, from the V of environment temperature sensor 150 TA, and the value that is calibrated that is stored in advance between the alignment epoch of optoelectronics transceivers 100 in the microprocessor 130 generates the TEC command signal.
The TEC command signal is provided to TEC drive circuit 120.TEC drive circuit 120 is configured to generate output signal V according to the TEC command signal TECTo drive TEC 146.As the above mentioned, the command signal that is sent to TEC 146 is arranged in the specific border based on the working temperature with shell 112 (Fig. 2) and/or laser assembly 142, makes the electric current that draws by transceiver 100 remain on below the maximum horizontal.In addition, the select command signal make TEC 146 always, basically always or the most of the time with heating mode work.
Fig. 4 shows under various lasers is provided with temperature, based on the graphical representation of the electric current shell temperature of transceiver, that drawn by transceiver 100.Curve Figure 200 has shown the relation of total blocks current 202 and module case temperature 204.This module can be Dense Waveleng Division Multiplexing (DWDM) gigabit interface converter (GBIC), and it is to use the optoelectronics transceivers of distributed Feedback (DFB) laser instrument as emitter element.In an one exemplary embodiment of the present invention, this module can be that the 10Gb/s standard form factor can plug (XFP) module.Yet, those skilled in the art will recognize that, also can use the module of other types.In one exemplary embodiment of the present invention, can use design give fixed temperature or on given temperature range, work and use TEC or other temperature to keep device to help to keep any module of this temperature.
In Fig. 4, first curve 206 shows when the shell temperature and is arranged on about 30 ℃ blocks current total 1: 208 time that this temperature is typical for existing module.This temperature spot is in the past because many former thereby be selected for DWDM and use.At first, the DWDM transmitter by 15 ℃ of original design Cheng Yiyue to about 30 ℃ room temperatures in office work.Secondly, the Distributed Feedback Laser that uses in the module also be designed to about 25 ℃ most effective and the most reliable.
Unfortunately, the density along with the optical port in the given panel increases so that reduce the size of system the rising of panel temperature inside.Because TEC is a well heater very efficiently, but the much lower refrigeratory of efficient, along with temperature in the panel rises, the total power consumption of module is index and rises.This can easily find out in curve 206.Shown in label 220, in about 65 ℃ maximum shell temperature, total current surpasses 400mA, shown in the reference point among Fig. 4 214.
Because different, drawing so, big electric current is unfavorable.At first, for the DWDM GBIC shown in Fig. 4, maximum blocks current is standardized to below the 300mA.This maximum blocks current comprises necessary all power of other electronic installation work that make in laser instrument and the module, and is used laser instrument or other optoelectronic devices are remained on the electric current of assigned temperature by TEC.Secondly, along with the increasing electric current of needs so that the numerous module for power supply in panel need increasing power supply.These bigger power supplys have also produced more heat, and these heats must dissipate in some way.
Second curve 210 shows an one exemplary embodiment according to transceiver of the present invention.The temperature work of laser assembly 142 (Fig. 3) to optimize is so that minimize blocks current on the shell temperature range of expansion.For second curve 210, the temperature of optimization is about 50 ℃, shown in data point 212.This module is maintained at about below the current value of 300mA to about 75 ℃ temperature range well at about 0 ℃.Balance is drawn electric current on this wide temperature range, and the electric current that makes low side (about 0 ℃) in the module temperature range draw equals the electric current that high-end (75 ℃) in the module temperature range draw approx, and this is an advantage of the present invention.
In addition, above-mentioned technology both can be used for the electric current that draws at the ambient temperature range balance module, also can be used for the electric current that draws at laser temperature scope balance module.But limit the usable range of laser temperature, allow in this scope, Wavelength of Laser to be carried out thermal tuning.If the laser temperature scope is enough wide, this will allow laser instrument in a plurality of channel work, as being limited by ITU.For example, as represented in Fig. 5, if required shell temperature range is-5 ℃ to 65 ℃, laser instrument can be worked between 40 ℃ and 50 ℃, as by line 230 and 232 expressions respectively, blocks current is remained on below the maximal value of 300mA simultaneously.For this example, 10 ℃ is that maximum can allow tuning range.If the tuning range that the multichannel need of work is bigger, then repeat this operation with on 20 ℃ the spreading range of scope for example with current consumption minimizes.
Fig. 6 shows generally a kind of exemplary method with power demand consumption level label 240 indications, that be used to be kept for optoelectronic module.240 of methods show a kind of exemplary method.The present invention is not limited to the method that illustrates, and can comprise less step, extra step or the alternate combinations of step.
Method 240 comprises the first step that limits minimum and maximum shell temperature, as represented by frame 242.Minimum and maximum shell temperature provide such as but be not limited to the border that the optoelectronic device of laser instrument can be worked thereon.Then, define maximum blocks current, as represented by frame 244.Can by such as but the standard that is not limited to the XFP standard is provided with tissue that maximum blocks current is set, wherein the XFP standard is limited in 400mA with maximum blocks current.Yet other restrictions that are higher or lower than 400mA all are fine.
Final step in the exemplary method 240 is that the laser works temperature is set, as represented by frame 246.This laser works temperature is set, makes to remain in the border that is limited such as the powertrace shown in the curve in the Figure 4 and 5.In an one exemplary embodiment of method 240, minimum and maximum shell temperature is separately positioned on 80 ℃ and 0 ℃, and maximum blocks current is set to 400mA, and the laser works temperature is set to 50 ℃.Those skilled in the art will recognize that other scope, electric current and working temperature also are fine.
One exemplary embodiment of the present invention provides the some advantages that are better than prior art.The prior art device is typically being worked to about 30 ℃ temperature range from about 15 ℃.Along with being encapsulated into increasing module in the system, the panel temperature inside trends towards raising.Because the heating certainly in the dense packaging system, this needs TEC just to start working in lower environment temperature.Because TEC is much lower in refrigerating mode efficient, but under the application standard of discussing, in panel, keep below the power that 30 ℃ of desired power are allowed to draw greater than module whole in the above.
As described, this technology is used on the limited laser works temperature range power consumption is minimized.This allows individual module in a plurality of channel data.This has improved the data transmission efficiency of module widely.
Can other particular forms implement the present invention and not deviate from its spirit or fundamental characteristics.No matter, should think that all the embodiment that describes only is an illustrative rather than restrictive from any aspect.Thereby, indicate scope of the present invention by claims rather than by foregoing description.Falling into the implication of equivalence setting of claim and the institute in the scope changes and all comprises within the scope of the claims.

Claims (22)

1. optoelectronic device comprises:
Shell;
Laser assembly is arranged in the described shell; And
Temperature control device, communicate by letter with described laser assembly, described temperature control device is with refrigerating mode or heating mode work, when described temperature control device is optimized in about 50 ℃ of work, described device with described heating mode work than more frequent with described refrigerating mode work.
2. the described optoelectronic device of claim 1, wherein said laser assembly comprises Dense Waveleng Division Multiplexing gigabit interface converter (DWDM GBIC) transceiver module.
3. the described optoelectronic device of claim 2, wherein said Dense Waveleng Division Multiplexing gigabit interface converter is the XFP module.
4. the described optoelectronic device of claim 1, wherein said shell temperature are maintained at about 45 ℃ to about 80 ℃ scope.
5. the described optoelectronic device of claim 1, wherein when described shell temperature was about 85 ℃, the electric current that described module is drawn was less than about 400mA.
6. the described optoelectronic device of claim 1, wherein when described shell temperature at about 0 ℃ to about 75 ℃ scope the time, maximum current is less than 300mA.
7. optoelectronic device comprises:
Shell is suitable for being mounted to communication panel;
Laser assembly is arranged in the described shell, and can draw electric current from described communication panel; And
Temperature control device is communicated by letter with described laser assembly; Described temperature control device is controlled the temperature of described shell, and greater than about 65 ℃ and during less than about 85 ℃, the electric current that draws from described communication panel is less than about 400mA with the described temperature of box lunch.
8. the described optoelectronic device of claim 7, wherein said laser assembly comprises Dense Waveleng Division Multiplexing gigabit interface converter (DWDM GBIC) transceiver module.
9. the described optoelectronic device of claim 8, wherein said Dense Waveleng Division Multiplexing gigabit interface converter is the XFP module.
10. the described optoelectronic device of claim 7, wherein said shell temperature are maintained at about 45 ℃ to about 80 ℃ scope.
11. the described optoelectronic device of claim 7, wherein when described shell temperature was about 85 ℃, the electric current that described module is drawn was less than about 400mA.
12. the described optoelectronic device of claim 7, wherein when described shell temperature at about 0 ℃ to about 75 ℃ scope the time, maximum current is no more than 300mA.
13. a method that is used for the electric current that on the scope of the working temperature of laser instrument balance drawn by described laser instrument said method comprising the steps of:
The maximum of definite laser instrument is drawn electric current on work laser temperature scope; And
Determine the temperature of the optimization of described laser instrument based on described work laser temperature scope; Select the temperature of described optimization to make when described work laser temperature increases to the maximum temperature of described temperature range, the electric current that described laser instrument draws is less than described maximum current, and when described laser works temperature was decreased to the minimum temperature that is used for described work laser temperature scope, the electric current that described laser instrument draws was less than described maximum current.
14. the described method of claim 13, wherein said laser works temperature are maintained at about-5 ℃ to about 80 ℃ scope.
15. the described method of claim 13, wherein when described laser works temperature was about 85 ℃, the electric current that described module is drawn was less than about 400mA.
16. the described method of claim 13, wherein when described laser works temperature at-5 ℃ to about 75 ℃ scope the time approximately, maximum is drawn electric current less than 300mA.
17. the described method of claim 13, wherein said temperature range is from-5 ℃ to about 75 ℃ approximately.
18. the described method of claim 17, the temperature of wherein said optimization are about 50 ℃.
19. the described method of claim 13, wherein said laser instrument are the parts of transceiver module.
20. the described method of claim 19, wherein said transceiver module are the XFP modules.
21. the described method of claim 19, wherein said transceiver module are Dense Waveleng Division Multiplexing gigabit interface converter (DWDM GBIC).
22. the described method of claim 21, wherein said Dense Waveleng Division Multiplexing gigabit interface converter is the XFP module.
CN 200580005363 2004-02-21 2005-02-22 Power optimization for operation of optoelectronic device with thermoelectric cooler Pending CN1922522A (en)

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CN101776929B (en) * 2010-01-04 2013-08-07 中兴通讯股份有限公司 Temperature control method and device of laser with thermoelectric refrigerating unit
CN103368060A (en) * 2012-03-28 2013-10-23 上海科乃特激光科技有限公司 Wavelength adjusting device
CN105161974A (en) * 2015-09-25 2015-12-16 华中科技大学 Thermoelectric step cooling method for semiconductor pulse laser
CN106851928A (en) * 2015-12-04 2017-06-13 北京计算机技术及应用研究所 A kind of detection means for light source driving circuit
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101776929B (en) * 2010-01-04 2013-08-07 中兴通讯股份有限公司 Temperature control method and device of laser with thermoelectric refrigerating unit
CN103368060A (en) * 2012-03-28 2013-10-23 上海科乃特激光科技有限公司 Wavelength adjusting device
CN107408986A (en) * 2015-03-20 2017-11-28 甲骨文国际公司 The laser array of security enhancing
CN107408986B (en) * 2015-03-20 2020-01-21 甲骨文国际公司 Security enhanced laser array
CN105161974A (en) * 2015-09-25 2015-12-16 华中科技大学 Thermoelectric step cooling method for semiconductor pulse laser
CN105161974B (en) * 2015-09-25 2018-06-12 华中科技大学 A kind of semiconductor pulse laser thermoelectricity ladder cooling means
CN106851928A (en) * 2015-12-04 2017-06-13 北京计算机技术及应用研究所 A kind of detection means for light source driving circuit
CN107167882A (en) * 2016-03-08 2017-09-15 迈络思科技有限公司 The optical-electrical converter of thermoelectric (al) cooler with integrated installation
CN111656862A (en) * 2017-11-30 2020-09-11 戴纳威普有限责任公司 Portable induction heater
CN111313888A (en) * 2018-12-11 2020-06-19 半导体元件工业有限责任公司 Power transistor device
CN111313888B (en) * 2018-12-11 2023-08-08 半导体元件工业有限责任公司 Power transistor device

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