CN1921165A - Piezoelectricity driver based on niobic magnesium acid lead-lead titanate single-crystal - Google Patents

Piezoelectricity driver based on niobic magnesium acid lead-lead titanate single-crystal Download PDF

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Publication number
CN1921165A
CN1921165A CN 200510029006 CN200510029006A CN1921165A CN 1921165 A CN1921165 A CN 1921165A CN 200510029006 CN200510029006 CN 200510029006 CN 200510029006 A CN200510029006 A CN 200510029006A CN 1921165 A CN1921165 A CN 1921165A
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lead
piezoelectric
crystal
driver
displacement
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CN 200510029006
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罗豪甦
冯祖勇
赵祥永
徐海清
贺天厚
林迪
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Priority to CN 200510029006 priority Critical patent/CN1921165A/en
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  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

The invention relates to a piezoelectric driver based on niobium magnesium acid lead-lead titanate single crystal. Compared with present PZT-5A ceramic piezoelectric driver, in same voltage, the maximum displacement output of crystal driver is 2 times of ceramic driver at same size, with better strain delay and better linearity. In strong electric field, the crystal driver has better displacement output property than the ceramic driver; the dynamic displacement property of PMNT crystal piezoelectric driver has flat displacement and piezoelectric output in wide frequency range (lower than 5kHz), with quick displacement response, smooth displacement frequency spectrum and low working voltage.

Description

A kind of piezoelectric actuator based on niobic magnesium acid lead-lead titanate single-crystal
Technical field
The present invention relates to a kind of piezoelectric actuator, belong to the piezoelectric device field based on niobic magnesium acid lead-lead titanate single-crystal.
Background technology
Along with science and technology development, many high-tech sectors more and more press for miniature drive system, as the various operations of biological cell, polymer, little operation, scanning probe microscopy (SPM), fiber alignment, microfabrication, the precision positioning of semiconductor making sheet etc.For these fields, electromagnetic actuator can not satisfy its application requirements far away, therefore, needs the research and development next-generation drive, and piezoelectric actuator is exactly wherein a kind of.Because characteristics such as piezoelectric actuator has that volume is little, bearing capacity is big, precision and displacement resolution height, and do not produce noise, be not subjected to electromagnetic interference, so in many technical fields such as acoustics, optics, bringing into play more and more important effect with the microdisplacement actuator spare of piezoelectric actuator making.
In general, electric field is induced strain S MaxBe an important parameter of decision piezoelectric actuator performance, it is determining the energy density of driver, therefore, total the thinking of development actuator material is exactly development S when guaranteeing other function admirable MaxHigh as far as possible new material.At present, the strain level maximum that provides of piezoelectricity and electrostrictive ceramic material only~0.15%.And for the widest soft PZT series piezoelectric ceramic actuator material of present purposes, though its piezoelectric coefficient d 33Value can reach about 750pC/N, can obtain bigger electric field and induce dependent variable, but because that the motion of its domain wall produces the strain hesitation is bigger, and its weak dielectric breakdown strength (Dielectric breakdown strength) and the saturability (Polarizationsaturation) that easily polarizes have limited its strain level and application.Piezoelectric will be obtained the dependent variable greater than 0.15%, and it should have the d greater than 1000 33Value and high dielectric breakdown strength.
(chemical composition is (1-x) Pb (Mg to novel high-performance piezoelectric lead magnesio-niobate-lead titanates 1/3Nb 2/3) O 3-xPbTiO 3, abbreviating PMNT as) and piezoelectric monocrystal has very excellent piezoelectricity and mechanical-electric coupling performance, d in accurate homotype phase boundary near a tripartite side 33>2000pC/N, k 33>90%, reach at 0.6% o'clock in strain and also have only very little response lag, and have very high dielectric breakdown strength (even can reach 120kV/cm).These performances all are higher than piezoelectric ceramic actuator material commonly used far away, have remedied the deficiency of piezoelectric ceramic aspect of performance, have demonstrated good prospects for application in high strain driver.And people such as Luo Hao Sue adopted improved Bridgman method successfully to realize the batch process (the ZL patent No. 99113472.9) of high-quality large scale PMNT monocrystalline, for the development and the application of novel PMNT piezoelectric monocrystal driver provides the assurance on the material.
Summary of the invention
The object of the present invention is to provide a kind of simple in structurely, can realize that the displacement output variable is big, the PMN-PT crystal piezoelectric actuator device that response lag is again little.Constituting of it: mid portion be utilize stack technology the multi-disc single-chip according to mechanically series connection, mode in parallel on the circuit is formed by stacking, two ends are added with the Al of same size 2O 3Or each a slice of metal derby, the two ends of each wafer are with conducting resinl, and are stained with silver-colored lead and can be connected with external power, can guarantee like this to be added with identical voltage on each sheet single-chip, thereby increase the total displacement amount of device.Adopt stacked PMNT crystal piezoelectric actuator device of the present invention, its performance has not only that the displacement output variable is big, strain curve good linearity, hesitation features of smaller, but also have advantages such as the displacement piezoelectric response is fast, the displacement output spectrum is smooth, operating voltage is lower, can satisfy the requirement of various driver applications, be a kind of high comprehensive performance, novel solid-state performer simple in structure.
Description of drawings
Fig. 1 shows the structural representation of plated electrode on the wafer that is of a size of 5mm * 5mm * 0.15mm.
Fig. 2 shows the structural representation of stacked PMNT crystal piezoelectric actuator.
Fig. 3 shows the pictorial diagram of the stacked PMNT crystal piezoelectric actuator device of various sizes.
Fig. 4 shows 10mm long PMNT crystal piezoelectric actuator and PZT-5A piezoelectric ceramics driver, and its electricity causes displacement (strain) respectively shown in a and b curve.-25V is under the driven of 200V, and PMNT crystal piezoelectric actuator can obtain the displacement of up 20.2 μ m, is (9.8 μ m) twice of piezoelectric ceramics driver, and has than better linearity of ceramic driver and littler response lag.
The electricity that Fig. 5 shows under the long PMNT crystal of 10mm piezoelectric actuator carries (a) and load 40N at idling the pressure (b) causes displacement (strain) curve.Under the weight of load 40N, the displacement of driver is kept to 18 μ m by 20.2 original μ m, and strain curve is linear and hysteresis does not have anything to change basically, can satisfy the application requirements of multiple driver.
Fig. 6 shows the electricity of the long PMNT crystal of 10mm piezoelectric actuator under different temperatures and causes displacement (strain) curve.When temperature rose to 85 ℃, the appearance of cubic phase had reduced the strain property of crystal-driven device.So for the application of crystal-driven device, working temperature preferably should not be higher than 80 ℃.
Fig. 7 shows piezoelectric spectral and the displacement frequency spectrum of the long PMNT crystal of 10mm piezoelectric actuator under voltage 80V.Under voltage 80V, output of the dynamic displacement of crystal piezoelectric actuator and piezoelectric response output are to remain unchanged basically in the 5kHz scope at institute's measured frequency, and its displacement and d 33Value conforms to substantially with the static result of test down.
Embodiment
The present invention select with the growth of improved Bridgman method<001 or<110〉orientation, component is (1-x) PMN-xPT monocrystalline of 0.20≤x≤0.40, as the piezoelectric of making driver.Below be that 5mm * 5mm, length are that the stacked PMNT piezoelectric actuator of 10mm is an example just to make sectional dimension, its manufacturing process of brief description:
Will<001〉or<110〉the orientation PMNT crystal-cut (wafer that 5mm * 5mm * 0.3mm) is identical that becomes to take measurements greatly, the fine grinding of wafer two sides to 0.15mm thick (effect of processing fine grinding can also guarantee the evenness on wafer two sides), specification with reference to as shown in Figure 1 plates electrode.Reference is stacked activation configuration as shown in Figure 2, utilize stack technology 55 first-class electrodes, be of a size of the wafer of 5mm * 5mm * 0.15mm, with better rigidity epoxy resin and normal temperature cure agent according to mechanically series connection, the mode in parallel stack that bonds on the circuit adds the Al of same size again at two ends 2O 3Or each a slice of metal derby, under certain pressure, solidify then.The two ends of attached electrode connect with low-temperature conductive glue on the wafer limit, and bonding silver-colored lead, heating cure then.Under the voltage of 120 ℃ of temperature, 100V, polarized 15 minutes at last.So just made the antetype device of stacked PMNT crystal piezoelectric actuator as shown in Figure 3.With reference to Fig. 2, link to each other with power supply by external silver-colored lead, driver vertically with regard to exportable bigger drive displacement, can be widely used among the miniature and medium and small drive system of high-technology fields such as precision optical machinery, nanometer control.

Claims (5)

1, a kind of piezoelectric actuator based on niobic magnesium acid lead-lead titanate single-crystal is characterized in that adopting the piezoelectric element of magnesium lead plumbate-lead titanates piezoelectric monocrystal as core.
2, by the described a kind of piezoelectric actuator of claim 1 based on niobic magnesium acid lead-lead titanate single-crystal, it is characterized in that magnesium lead plumbate-lead titanates piezoelectric monocrystal of adopting, its chemical composition is (1-x) Pb (Mg 1/3Nb 2/3) O 3-xPbTiO 3, its optimal component that is used for preparing piezoelectric actuator is 0.20-0.40 at x, its crystallographic direction can be<and 001〉and<110〉direction.
3, by claim 1 and 2 described a kind of piezoelectric actuators based on niobic magnesium acid lead-lead titanate single-crystal, it has excellent piezoelectric property, can be widely used in preparation high-performance piezoelectric actuator device.
4, by claim 1,2 and 3 described a kind of piezoelectric actuators based on niobic magnesium acid lead-lead titanate single-crystal, its piezoelectric element can adopt the version such as stacked of multilayer.
5, by claim 1,2,3 and 4 described a kind of piezoelectric actuators based on niobic magnesium acid lead-lead titanate single-crystal, it is characterized in that output shift quantity is big and response lag is little, can be widely used among the miniature and medium and small drive system of high-technology fields such as precision optical machinery, nanometer control.
CN 200510029006 2005-08-22 2005-08-22 Piezoelectricity driver based on niobic magnesium acid lead-lead titanate single-crystal Pending CN1921165A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102409833A (en) * 2011-09-20 2012-04-11 中国科学院上海硅酸盐研究所 Power generation floor based on piezoelectric material
CN101630923B (en) * 2009-07-30 2013-02-20 南京航空航天大学 Preparation method of curve driver for functional gradient of relaxor type piezoelectric ceramic
CN106856401A (en) * 2015-12-08 2017-06-16 中国科学院上海硅酸盐研究所 A kind of piezoelectric vibrator and its preparation method and application
CN113013321A (en) * 2021-02-07 2021-06-22 西安交通大学 Preparation method of piezoelectric single crystal laminated driver
WO2024011967A1 (en) * 2022-07-13 2024-01-18 广东大湾区空天信息研究院 Optical frequency comb generating device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630923B (en) * 2009-07-30 2013-02-20 南京航空航天大学 Preparation method of curve driver for functional gradient of relaxor type piezoelectric ceramic
CN102409833A (en) * 2011-09-20 2012-04-11 中国科学院上海硅酸盐研究所 Power generation floor based on piezoelectric material
CN106856401A (en) * 2015-12-08 2017-06-16 中国科学院上海硅酸盐研究所 A kind of piezoelectric vibrator and its preparation method and application
CN106856401B (en) * 2015-12-08 2020-10-23 中国科学院上海硅酸盐研究所 Piezoelectric vibrator and preparation method and application thereof
CN113013321A (en) * 2021-02-07 2021-06-22 西安交通大学 Preparation method of piezoelectric single crystal laminated driver
WO2024011967A1 (en) * 2022-07-13 2024-01-18 广东大湾区空天信息研究院 Optical frequency comb generating device

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Open date: 20070228