CN1915803A - Method for preparing polycrystalline Nano film of zinc selenide - Google Patents
Method for preparing polycrystalline Nano film of zinc selenide Download PDFInfo
- Publication number
- CN1915803A CN1915803A CN 200610124483 CN200610124483A CN1915803A CN 1915803 A CN1915803 A CN 1915803A CN 200610124483 CN200610124483 CN 200610124483 CN 200610124483 A CN200610124483 A CN 200610124483A CN 1915803 A CN1915803 A CN 1915803A
- Authority
- CN
- China
- Prior art keywords
- solution
- source
- hydrazine hydrate
- film
- trolamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Photovoltaic Devices (AREA)
Abstract
This invention discloses a chemical bath method for preparing ZnSe polycrystalline nanofilm. The method adopts zinc salt solution as Zn2+ source, and prepared Na2SeSO3 solution, selenourea solution or dimethyl selenourea solution as Se2- source. The method adopts hydrazine hydrate, or a mixture of hydrazine hydrate and one or two of ammonia solution and triethanolamine as the complexing agent to form a precursor solution for the chemical bath, which can be used to prepare ZnSe optoelectronic nanofilm. Compared with other II-VI group semiconductors, ZnSe has a high solubility product constant. When the product of anions and cations concentrations exceeds the solubility product constant, isopical deposition can occure to form powdery block material, thus the control of the process is very important. The waste produced by ZnSe polycrystalline nanofilm preparation brings little pollution to the environment, thus the method is clean and environmentally friendly. The obtained ZnSe polycrystalline nanofilm has such advantages as good crystallinity, smooth and bright surface, high transmittance in visible light range and good optic properties.
Description
Technical field
The invention belongs to compound semiconductor nano material preparation technical field, be specifically related to a kind of preparation method of polycrystalline Nano film of zinc selenide.
Background technology
A kind of direct broad-band gap II-VI of zinc selenide (ZnSe) crystal family semiconductor material, crystalline structure is zink sulphide or wurtzite structure.The smallest energy gap of zinc selenide when Γ compartment temperature is 2.67eV, be arranged in spectrum blue region (464nm), have higher effciency of energy transfer and good physicochemical property, it is widely studied, become the potential possibility material of making high-level efficiency blue light-emitting diode, solid-state semiconductor laser apparatus, also can be used as indigo plant/blue-green semiconductor luminotron and laser apparatus, the optical bistable device of bluish-green wave band response and the Window layer material of thin-film solar cells etc., also is a kind of round-the-clock infra-red material simultaneously.。Aspect heat conduction property; the ZnSe thermal conductivity is 0.19W/ ℃-cm; than other II-VI compounds of group height; this characteristic is extremely important on element application; a large amount of heat energy are accumulated by regular meeting when working because of sealed cell; the material of high heat-conduction coefficient can make element that better heat-sinking capability is arranged, for a long time steady operation.
For a long time, American-European advanced country all attaches great importance to the development of ZnSe semiconductor material and low dimensional structures thereof.In the research, people have been developed the synthetic method of multiple ZnSe nano material, as sonochemistry method, title complex thermal decomposition method, colloidal ion synthesis method and solvent thermal process etc.In order to control the pattern of ZnSe nano film material better, it is vital seeking microprocesses such as appropriate condition or optimal control nucleating growth.The chemical process of preparation ZnSe film mainly contains chemical vapor deposition (CVD), photochemical precipitation (PCD) and chemical bath deposition (CBD) at present, wherein chemical bath deposition method technology is simple, cost is low, be fit to very much preparation big area, very thin film and multilayer film, and can improve the ionic inter-level diffusion by anneal, help generating novel thin film, improve thermostability.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of polycrystalline Nano film of zinc selenide, the ZnSe polycrystalline Nano film good crystallinity of this method preparation, the surface is even and glossy, visible-range internal transmission factor height, and good optical properties.
The preparation method of a kind of polycrystalline Nano film of zinc selenide provided by the invention, its step comprises:
(1) preparation ion precursor:
Compound concentration is that the zinc salt solution of 0.01～0.5mol/L is as Zn
2+The source;
Use hydrazine hydrate N2H4 H2O-100 as complexing agent, the mixed solution that perhaps uses hydrazine hydrate N2H4 H2O-100 and ammonia soln and/or the trolamine aqueous solution is as complexing agent; When using the mixed solution of hydrazine hydrate N2H4 H2O-100 solution and ammonia soln, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and ammoniacal liquor is 1: 5～1: 1; When using the mixed solution of the hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and trolamine is 1: 2～1: 1; When using the mixed solution of ammonia soln, hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, hydrazine hydrate N2H4 H2O-100 is 1: 3～1: 1 with the ratio of ammoniacal liquor and trolamine volumetric molar concentration sum, and wherein the ratio of ammoniacal liquor and trolamine volumetric molar concentration is 3: 2～1: 1;
Compound concentration is that the strong base solution of 0.5～2mol/L is as OH
-
By stoichiometric ratio, it is the Na of 0.1～2mol/L that the Se powder is added concentration
2SO
3In the aqueous solution, stir in 50～100 ℃ of following thermostatically heating under the secluding air condition, leave standstill the unnecessary not molten Se powder of back elimination, remaining Na
2SeSO
3The aqueous solution make Se
2-The source; Perhaps directly use selenourea, dimethyl selenourea to be mixed with the aqueous solution of 0.05～2mol/L as Se
2-The source;
(2) preparation chemical bath precursor solution:
Complexing agent is added Zn
2+In the solution of source, settled solution becomes white casse solution, continues afterwards to add complexing agent, till turbid solution all becomes settled solution again, adds highly basic and Se again
2-Source solution is as chemical bath precursor solution, wherein Se
2-Source and alkaline molar concentration rate are 1: 2～1: 5; Se
2-Source and Zn
2+The molar concentration rate in source is 1: 1～10: 1;
(3) clean substrate is vertically placed in the chemical bath precursor solution, in 40 ℃～80 ℃ waters bath with thermostatic control and under magnetic agitation, begins deposit film on the substrate;
(4) when sedimentary film thickness reaches requirement, take out substrate, use the deionized water rinsing film surface, dry then;
(5) dried film is carried out anneal, obtain required polycrystalline Nano film of zinc selenide.
The present invention adopts zinc solution as zinc ion source, self-control Na
2SeSO
3Solution or preparation selenourea or methyl-selenide urea solution provide Se
2-Source, one or more that adopt single hydrazine hydrate N2H4 H2O-100 or hydrazine hydrate and ammoniacal liquor, trolamine are mixed and are made complexing agent and form the chemical bath precursor solution, are equipped with ZnSe nano photoelectric thin-film material with the chemical bath legal system.Compare with other II-VI family semi-conductor, the solubility product constant of ZnSe is higher relatively, be easy to isopical deposit takes place when zwitterion concentration long-pending surpasses its ion-product constant in the solution and form Powdered bulk, so the control of technology is quite important.The present invention's waste liquid in ZnSe semiconductor film building-up process is very little to the pollution of environment, be the preparation method of a kind of " green ", the prepared ZnSe polycrystalline Nano film has good crystallinity, and the surface is even and glossy, visible-range internal transmission factor height, characteristics such as good optical properties.Particularly, the present invention has following technique effect:
(1) required equipment is simple, and preparation process is simple, and is not high to environmental requirement, and general place all can be realized.
(2) uniformity of film of Xing Chenging is good, and can low cost deposit large-area film, meets the requirement of modern industry development.
(3) film-forming temperature is low, can be easy to realize film is deposited on the low melting point substrate.
(4) film thickness and film forming speed are very easy to control.By the concentration of regulating precursor, the pH value and the depositing of thin film time of deposit solution, can control film forming speed and thickness preferably.
Description of drawings
Fig. 1 is preparation method's of the present invention process flow sheet;
Fig. 2 is the XRD figure of the ZnSe film of the inventive method preparation;
Fig. 3 is the absorption spectrum of the ZnSe film of the inventive method preparation;
Fig. 4 is the transmitted spectrum of the ZnSe film of the inventive method preparation;
Fig. 5 is the SEM photo of the ZnSe film of the inventive method preparation.
A sample among the figure be according to example 1 preparation at logical N
260 minutes ZnSe film of 200 ℃ of following anneal in the gas atmosphere stove; The B sample be according to example 1 preparation at logical N
260 minutes ZnSe film of 400 ℃ of following anneal in the gas atmosphere stove.
Embodiment
The present invention in water bath with thermostatic control, soluble Zn salts solution (Zn (CH
3COO)
2Or ZnSO
4Or Zn (NO
3)
2Or ZnCl
2Deng) Zn is provided
2+Source, i.e. positively charged ion precursor; Self-control Na
2SeSO
3Solution or preparation selenourea or methyl-selenide urea solution provide Se
2-Source, i.e. negatively charged ion precursor; One or more that adopt single hydrazine hydrate N2H4 H2O-100 or hydrazine hydrate and ammoniacal liquor, trolamine mix to be made complexing agent and forms the chemical bath precursor solution, and substrate is surperficial first heterogeneous nucleation in solution, forms island again, and last island forms continuous film.The step of the inventive method (as shown in Figure 1) is:
(1) preparation of substrate:
Before the ZnSe thin film deposition began, substrate must be through strict cleaning.At first, with stain remover substrate being carried out decontamination handles; Then, place the potassium bichromate washing lotion to soak substrate, take out the back and rinse well, cleaned 10 to 20 minutes respectively at acetone, ethanol and deionized water for ultrasonic again, at last drying for standby in 100 ± 5 ℃ loft drier with deionized water.Substrate can adopt commercial 75 * 25 * 1mm slide glass or SnO
2: F glass or silica glass etc.
(2) preparation ion precursor
Compound concentration is the zinc salt (Zn (CH of 0.01～0.5mol/L
3COO)
2Or ZnSO
4Or Zn (NO
3)
2Or ZnCl
2) the aqueous solution as Zn
2+Source, i.e. positively charged ion precursor;
Use hydrazine hydrate N2H4 H2O-100 as complexing agent, the mixed solution that perhaps uses hydrazine hydrate N2H4 H2O-100 and ammonia soln and/or triethanolamine solution is as complexing agent; When using the mixed solution of hydrazine hydrate N2H4 H2O-100 solution and ammonia soln, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and ammoniacal liquor is 1: 5～1: 1; When using the mixed solution of the hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and trolamine is 1: 2～1: 1; When using the mixed solution of ammonia soln, hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, hydrazine hydrate N2H4 H2O-100 is 1: 3～1: 1 with the ratio of ammoniacal liquor and trolamine volumetric molar concentration sum, and wherein the ratio of ammoniacal liquor and trolamine volumetric molar concentration is 3: 2～1: 1;
Compound concentration is the strong base solution (NaOH or KOH) of 0.5～4mol/L, and Se is provided
2-The OH that the source hydrolysis is required
-
According to stoichiometric ratio, with the Se powder add concentration be 0.1～2mol/L Na
2SO
3In the aqueous solution, seal heated and stirred under following 50～100 ℃ of constant temperature, leave standstill after-filtration and go out unnecessary not molten Se powder, remaining Na
2SeSO
3The aqueous solution make Se
2-The source; Perhaps directly use selenourea, dimethyl selenourea to be mixed with the aqueous solution of 0.05～2mol/L as Se
2-The source;
(3) preparation chemical bath precursor solution
The chemical bath precursor solution is by Zn
2+Source solution, enveloping agent solution, strong base solution, Se
2-Source and deionized water are formed.Zn at first
2+Add complexing agent in the solution of source, settled solution becomes white casse solution, continues afterwards to add complexing agent, till turbid solution all becomes settled solution again, adds strong base solution and Se again
2-The source, Se
2-Source and highly basic molar concentration rate be about 1: 2～and 1: 5; Se
2-Source and Zn
2+The source molar concentration rate is 1: 1～10: 1;
(4) deposition of zinc selenide film
The substrate of handling well is vertically placed in the above-mentioned chemical bath precursor solution, in 40 ℃～80 ℃ waters bath with thermostatic control and under magnetic agitation, begins deposit film on the substrate.Depositing time is 0.5～8 hour, selects according to desired thickness.Take out substrate afterwards, use deionized water rinsing, place 60 ± 5 ℃ of loft drier inner dryings more than 1 hour again;
(5) with dried film at N
2In the atmosphere furnace in 200～550 ℃ of following anneal; Should be in air 400 ℃ of following anneal.
Example 1:
In 200mL concentration is the Na of 0.8mol/L
2SO
3Add 8 gram selenium powders in the solution, stirred thermostatically heating 8 hours at 90 ℃ of lower magnetic forces, place 12 hours after-filtration and go out excessive selenium powder not molten in the solution, surplus solution is standby fresh Na
2SeSO
3Solution.
Glass substrate through detergent-treatment, is removed the tangible dirt of glass substrate surface.Then, it is placed contain the potassium bichromate washing lotion and soak more than 12 hours, be used to remove adherent inorganics on the substrate, take out and use deionized water rinsing, again in acetone soln ultrasonic cleaning 10min to remove the organism of substrate surface, remove the acetone on surface with ethanol solution ultrasonic cleaning 10min, remove the ethanol on surface with deionization ultrasonic cleaning 10min again, at last with deionized water rinsing and drying for standby.
Substrate after dry 1～2 hour, begins to prepare thin film work in 100 ± 5 ℃ thermostatic drying chamber.The zinc acetate solution 50mL of measuring 0.05mol/L adds the strong aqua (NH of 12.5mL respectively then in the 150mL beaker
3H
2O) solution, 5mL 85% hydrazine hydrate N2H4 H2O-100 (N
2H
4H
2O) solution, the Na of the new preparation of 10mL 78% trolamine (TEA) solution and 20mL
2SeSO
3, adding appropriate amount of deionized water to overall solution volume is 100mL, and the substrate of handling well is vertically put into beaker, covers watch-glass, put into 70 ℃ of waters bath with thermostatic control and stir, after about 40 minutes, take out substrate, use deionized water rinsing, after under 60 ± 5 ℃ dry 2 hours, place logical N
2400 ℃ of anneal are 60 minutes in the atmosphere furnace of gas, take out film after being chilled to room temperature.
Its performance characterization is:
Dutch X ' the PERT PRO X-ray diffractometer test of the zinc selenide film of preparation, as shown in Figure 2, with standard diffraction card JCPDS 37-1463 more as can be known, prepared sample is the cubic zinc blende result, presents higher c axle and is orientated, film has degree of crystallinity preferably.
With measuring its optical absorption characteristic on the UV-3000 ultraviolet-visible spectrophotometer of Tianjin, island.As Fig. 3, the obvious characteristics absorbing phenomenon appears about 500nm.
With measuring its light transmission features on the UV-3000 ultraviolet-visible spectrophotometer of Tianjin, island.As Fig. 4, its transmissivity in visible-range reaches more than 80%.
SIRION 200 field emission scanning electron microscopes of producing with Dutch PHILIPS Co. characterize film sample, image as shown in Figure 5, the synthetic film has surface topography preferably.
Example 2:
Na
2SeSO
3Identical in the preparation of solution and substrate processing process and the example 1.
Substrate after dry 1～2 hour, begins to prepare thin film work in 100 ± 5 ℃ thermostatic drying chamber.The solution of zinc sulfate 2mL of measuring 0.5mol/L adds the hydrazine hydrate N2H4 H2O-100 solution of 5mL 85% respectively then in the 150mL beaker, the Na of the new preparation of the NaOH solution of 15mL 2mol/L and 20mL
2SeSO
3Solution, adding appropriate amount of deionized water to overall solution volume is 100mL, and the substrate of handling well is vertically put into beaker, covers watch-glass, put into 50 ℃ water bath with thermostatic control and stir, after about 1 hour, take out substrate, use deionized water rinsing, after under 60 ± 5 ℃ dry 2 hours, place N
2In 500 ℃ of following anneal 1 hour, take out film after being chilled to room temperature in the atmosphere furnace.
Example 3:
Na
2SeSO
3Identical in the preparation of solution and the treating processes of substrate and the example 1.
Substrate after dry 1～2 hour, begins to prepare thin film work in 100 ± 5 ℃ of thermostatic drying chambers.The zinc nitrate solution 5mL of measuring 0.2mol/L adds 5mL 85% hydrazine hydrate N2H4 H2O-100 (N respectively in the 150mL beaker
2H
4H
2O) solution, 5mL strong aqua (NH
3H
2O) solution, the Na of the new preparation of the NaOH solution of 12.5mL 2mol/L and 20mL
2SeSO
3, adding proper amount of deionized water to overall solution volume is 100mL.The substrate of handling well is vertically put into beaker, cover watch-glass, put into 60 ℃ of waters bath with thermostatic control and stir, take out substrate after about 2 hours, use deionized water rinsing, then after under 60 ± 5 ℃ dry 2 hours, again in air in 350 ℃ of down annealing 120 minutes, take out film after being chilled to room temperature.
Claims (1)
1, a kind of preparation method of polycrystalline Nano film of zinc selenide, its step comprises:
(1) preparation ion precursor:
Compound concentration is that the zinc salt solution of 0.01～0.5mol/L is as Zn
2+The source;
Use hydrazine hydrate N2H4 H2O-100 as complexing agent, the mixed solution that perhaps uses hydrazine hydrate N2H4 H2O-100 and ammonia soln and/or the trolamine aqueous solution is as complexing agent; When using the mixed solution of hydrazine hydrate N2H4 H2O-100 solution and ammonia soln, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and ammoniacal liquor is 1: 5～1: 1; When using the mixed solution of the hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, wherein the molar concentration rate of hydrazine hydrate N2H4 H2O-100 and trolamine is 1: 2～1: 1; When using the mixed solution of ammonia soln, hydrazine hydrate N2H4 H2O-100 solution and the trolamine aqueous solution, hydrazine hydrate N2H4 H2O-100 is 1: 3～1: 1 with the ratio of ammoniacal liquor and trolamine volumetric molar concentration sum, and wherein the ratio of ammoniacal liquor and trolamine volumetric molar concentration is 3: 2～1: 1;
Compound concentration is that the strong base solution of 0.5～2mol/L is as OH
-
By stoichiometric ratio, it is the Na of 0.1～2mol/L that the Se powder is added concentration
2SO
3In the aqueous solution, stir in 50～100 ℃ of following thermostatically heating under the secluding air condition, leave standstill the unnecessary not molten Se powder of back elimination, remaining Na
2SeSO
3The aqueous solution make Se
2-The source; Perhaps directly use selenourea, dimethyl selenourea to be mixed with the aqueous solution of 0.05～2mol/L as Se
2-The source;
(2) preparation chemical bath precursor solution:
Complexing agent is added Zn
2+In the solution of source, settled solution becomes white casse solution, continues afterwards to add complexing agent, till turbid solution all becomes settled solution again, adds highly basic and Se again
2-Source solution is as chemical bath precursor solution, wherein Se
2-Source and alkaline molar concentration rate are 1: 2～1: 5; Se
2-Source and Zn
2+The molar concentration rate in source is 1: 1～10: 1;
(3) clean substrate is vertically placed in the chemical bath precursor solution, in 40 ℃～80 ℃ waters bath with thermostatic control and under magnetic agitation, begins deposit film on the substrate;
(4) when sedimentary film thickness reaches requirement, take out substrate, use the deionized water rinsing film surface, dry then;
(5) dried film is carried out anneal, obtain required polycrystalline Nano film of zinc selenide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101244831A CN100376473C (en) | 2006-09-08 | 2006-09-08 | Method for preparing polycrystalline Nano film of zinc selenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101244831A CN100376473C (en) | 2006-09-08 | 2006-09-08 | Method for preparing polycrystalline Nano film of zinc selenide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1915803A true CN1915803A (en) | 2007-02-21 |
| CN100376473C CN100376473C (en) | 2008-03-26 |
Family
ID=37736906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101244831A Expired - Fee Related CN100376473C (en) | 2006-09-08 | 2006-09-08 | Method for preparing polycrystalline Nano film of zinc selenide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100376473C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101602496B (en) * | 2009-07-07 | 2011-05-25 | 同济大学 | Synchronic preparation method of lead telluride thin film and nano powder |
| CN101671006B (en) * | 2009-09-27 | 2011-07-20 | 上海大学 | Electron beam irradiation synthesis method of nanometer zinc selenide quantum dot powder |
| CN102400212A (en) * | 2010-08-02 | 2012-04-04 | 天津津航技术物理研究所 | Method For Obtaining Polycrystal Optical Zinc Selenide |
| CN101665983B (en) * | 2008-09-01 | 2012-08-29 | 西北工业大学 | Zinc selenide single crystal growing method and zinc selenide single crystal growing container |
| CN102664215A (en) * | 2012-05-14 | 2012-09-12 | 山东建筑大学 | Method for preparing zinc selenide photoelectric film |
| CN107634107A (en) * | 2017-08-30 | 2018-01-26 | 常州豫春化工有限公司 | A kind of preparation method for strengthening efficiency of light absorption type nano photovoltaic material |
| CN108069393A (en) * | 2016-11-14 | 2018-05-25 | 中国科学院上海硅酸盐研究所 | A kind of hydrogenation Copper thin film and preparation method thereof |
| CN110299430A (en) * | 2019-06-06 | 2019-10-01 | 华中科技大学 | A kind of semiconductive thin film photodetector and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87101958A (en) * | 1987-03-12 | 1988-09-21 | 周三民 | The worm drive of circulation ball |
| JPH1022303A (en) * | 1996-07-08 | 1998-01-23 | Showa Denko Kk | Manufacture of p-type znse compd. semiconductor film |
| CN1210775C (en) * | 2001-04-12 | 2005-07-13 | 中国科学院长春光学精密机械与物理研究所 | Method suitable for growing zinc sulfide (selenide)-manganese film of broad-band semiconductor |
-
2006
- 2006-09-08 CN CNB2006101244831A patent/CN100376473C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665983B (en) * | 2008-09-01 | 2012-08-29 | 西北工业大学 | Zinc selenide single crystal growing method and zinc selenide single crystal growing container |
| CN101602496B (en) * | 2009-07-07 | 2011-05-25 | 同济大学 | Synchronic preparation method of lead telluride thin film and nano powder |
| CN101671006B (en) * | 2009-09-27 | 2011-07-20 | 上海大学 | Electron beam irradiation synthesis method of nanometer zinc selenide quantum dot powder |
| CN102400212A (en) * | 2010-08-02 | 2012-04-04 | 天津津航技术物理研究所 | Method For Obtaining Polycrystal Optical Zinc Selenide |
| CN102400212B (en) * | 2010-08-02 | 2014-06-18 | 天津津航技术物理研究所 | Method for obtaining polycrystal optical zinc selenide |
| CN102664215A (en) * | 2012-05-14 | 2012-09-12 | 山东建筑大学 | Method for preparing zinc selenide photoelectric film |
| CN102664215B (en) * | 2012-05-14 | 2014-11-26 | 山东建筑大学 | Method for preparing zinc selenide photoelectric film |
| CN108069393A (en) * | 2016-11-14 | 2018-05-25 | 中国科学院上海硅酸盐研究所 | A kind of hydrogenation Copper thin film and preparation method thereof |
| CN107634107A (en) * | 2017-08-30 | 2018-01-26 | 常州豫春化工有限公司 | A kind of preparation method for strengthening efficiency of light absorption type nano photovoltaic material |
| CN107634107B (en) * | 2017-08-30 | 2019-03-26 | 中建材（合肥）新能源有限公司 | A kind of preparation method enhancing efficiency of light absorption type nano photovoltaic material |
| CN110299430A (en) * | 2019-06-06 | 2019-10-01 | 华中科技大学 | A kind of semiconductive thin film photodetector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100376473C (en) | 2008-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100376473C (en) | Method for preparing polycrystalline Nano film of zinc selenide | |
| Tarwal et al. | Photoluminescence and photoelectrochemical properties of nanocrystalline ZnO thin films synthesized by spray pyrolysis technique | |
| US9312409B2 (en) | Ink for producing compound semiconductor thin film, compound semiconductor thin film produced using the ink, solar cell having compound semiconductor the thin film, and process for producing solar cell | |
| Liu et al. | Morphological and stoichiometric study of chemical bath deposited CdS films by varying ammonia concentration | |
| Esparza-Ponce et al. | Growth technology, X-ray and optical properties of CdSe thin films | |
| Seo et al. | Effect of sulfur and copper amounts in sol–gel precursor solution on the growth, crystal properties, and optical properties of Cu 2 ZnSnS 4 films | |
| Girija et al. | STRUCTURAL, MORPHOLOGICAL AND OPTICAL STUDIES OF CdSe THIN FILMS FROM AMMONIA BATH. | |
| CN101439873B (en) | Method for titania film growth in fluorine-based aqueous solution | |
| CN100582012C (en) | Nano porous zinc oxide thin film with high C-axis orientation and preparation method thereof | |
| Liu et al. | Effect of buffer layer on solution deposited ZnO films | |
| Xia et al. | Synthesis and properties of SnS thin films by chemical bath deposition | |
| CN112225468B (en) | Method for preparing CZTS absorption layer by combining electrodeposition method and sol-gel method | |
| Buba et al. | Optical and electrical properties of chemically deposited ZnO thin films | |
| Kobayashi et al. | Photochemical depositions of ZnS thin films from C~ 4H~ 4KNaO~ 6-added solutions | |
| CN111740014A (en) | Two-dimensional/one-dimensional/zero-dimensional composite SnO for solar cell2Preparation method of nanocrystalline electron transport layer | |
| Hu et al. | Control of crystal growth for ZnO nanowhisker films in aqueous solution | |
| JP6169283B2 (en) | Morpholine bath and method for chemically depositing layers | |
| Ernits et al. | Anion effect of zinc source on chemically deposited ZnS (O, OH) films | |
| CN117174593B (en) | Method for preparing copper zinc tin sulfur selenium film precursor solution, copper zinc tin sulfur selenium film and photovoltaic device based on ammonia water addition | |
| CN113345972B (en) | Layered polycrystalline lead selenide photoelectric film and preparation method thereof | |
| Ghali et al. | Crystalline phase transformation of colloidal cadmium sulfide nanocrystals | |
| HARIHARAN et al. | EFFECTS OF POST ANNEALING ON THE CHARACTERISTICS OF ZINC SULPHIDE THIN FILMS FORMED BY CHEMICAL BATH DEPOSITION FOR SOLAR CELL APPLICATIONS. | |
| Mendivil-Reynoso et al. | One-Step Synthesis of ZnO Films by Chemical Bath Deposition Not Using Thermal Annealing | |
| Calinescu et al. | Overview on elaboration and characterization of nanostructured oxides for solar cells | |
| Kapadnis et al. | Studies on chemically synthesis of polycrystalline CdTeO3 thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |