CN1914552A - Electronic device, semiconductor device and its manufacturing method - Google Patents

Electronic device, semiconductor device and its manufacturing method Download PDF

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Publication number
CN1914552A
CN1914552A CN 200580003270 CN200580003270A CN1914552A CN 1914552 A CN1914552 A CN 1914552A CN 200580003270 CN200580003270 CN 200580003270 CN 200580003270 A CN200580003270 A CN 200580003270A CN 1914552 A CN1914552 A CN 1914552A
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film
electrode
substrate
semiconductor device
thin film
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前川慎志
山崎舜平
小路博信
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Abstract

In the present circumstances, a film formation method of using spin coating in a manufacturing process is heavily used. As increasing the substrate size in future, the film formation method of using spin coating becomes at a disadvantage in mass production since a mechanism for rotating a large substrate becomes large, and there is many loss of material solution or waste liquid. According to the present invention, in a manufacturing process of a semiconductor device, a microscopic wiring pattern can be realized by delivering selectively photosensitive conductive material solution by droplet discharging, exposing selectively to laser light or the like, and developing. The present invention can reduce drastically costs since a patterning process can be shortened and an amount of material in a process of forming a conductive pattern can be reduced. Accordingly, the present invention can be applied to manufacture a large substrate.

Description

Electrical equipment, semiconductor device and manufacture method thereof
Technical field
The method that the present invention relates to semiconductor device and make this semiconductor device, this semiconductor device have and comprise the thin film transistor (TFT) circuit of (hereinafter being called TFT).More specifically, the present invention relates to be equipped with the electrical equipment of electro-optical device, wherein this electro-optical device is representative with luminous display unit or the display panels with organic illuminating element.
Term used herein " semiconductor device " is meant usually can be by the device that utilizes characteristic of semiconductor to carry out work, for example electro-optical device, semiconductor circuit and electrical equipment.
Background technology
In recent years, use the technology that is formed at the semiconductor film film preparation thin film transistor (TFT) (TFT) on the substrate with insulating surface to draw attention.Thin film transistor (TFT) is widely used in the electronic installation such as IC or electro-optical device, develops into the on-off element that is used for image display device especially.
As image display device, liquid crystal indicator is normally known.Compare with the passive matrix liquid crystal indicator, active matrix liquid crystal display apparatus is more through being commonly used for image display device, because active matrix display devices can obtain than passive matrix display device distinct image more.In active matrix liquid crystal display apparatus, be arranged in the pixel electrode of matrix configuration and on screen, form display graphics by driving.Particularly, selected pixel electrode and and the corresponding opposite electrode of this pixel electrode between when applying voltage, optical modulation appears in the liquid crystal layer that is clipped between this pixel electrode and the opposite electrode, the observer is identified as display image with this optical modulation.
The manufacturing technology of producing in batches effectively that is adopted traditionally is to cut a plurality of display panels from a mother glass substrate.The size of this mother glass substrate increases to the 680 * 880mm or the 730 * 920mm in the 4th generation at the beginning of 21 century from 300 * 400mm of the first generation nineties in 20th century.Manufacturing technology is developed simultaneously, makes to obtain a plurality of display panels from a substrate.
In recent years, begun to have EL element as the autoluminescence light-emitting component the research of light-emitting device.This light-emitting device is also referred to as organic EL and shows or Organic Light Emitting Diode.Owing to characteristics such as the high-speed response speed that is applicable to the film demonstration, low-voltage, low-power consumption drivings, the application of these light-emitting devices in cell phone of new generation, PDA(Personal Digital Assistant) or display of future generation caused concern.
EL element comprises anode, negative electrode and is clipped in the layer (hereinafter being called the EL layer) that comprises between this anode and the negative electrode as the organic compound of luminescent layer.In case this anode and negative electrode are applied voltage, from this EL (electroluminescence) layer emission light.Can obtain fluorescence that when singlet excited turns back to ground state, occurs and the phosphorescence that when triplet excited state turns back to ground state, occurs from this EL element.
The range of application of active matrix display devices is expanded.Along with screen size increases, the requirement of high definition, high aperture, high reliability is increased thereupon.
The open No.2000-298446 of unexamined patent does not disclose the large-sized monitor that display screen is realized that can comprise a plurality of tiling panels by formation.Yet owing to used a plurality of panels, this large-sized monitor needs expensive and unique driving method.
When screen size increases, boost productivity and the requirement that reduces cost also increases.
The open No.2000-188251 of unexamined patent does not disclose and has used a kind of device film forming technology on semiconductor wafer, thereby this device can discharge the yield rate that resist solution improves the solution that is used to prepare film continuously with the form of minor diameter line.
Summary of the invention
Under present situation, in manufacture process, use a kind of method for manufacturing thin film that adopts spin coated widely.Along with the further increase of substrate size in future, use the method for manufacturing thin film of spin coated aspect batch process, to have disadvantageous aspect, become big and have wide variety of materials solution losses or waste liquid because be used to rotate the mechanical hook-up of large-size substrate.In the situation of rectangular substrate spin coated material solution, the film of coating is tending towards out-of-flatness, that is, it all is the central circular point with the turning axle that the coating film is tending towards occurring each.The invention provides the manufacturing process that a kind of use droplet discharges (dropletdischarging) method, described droplet method for releasing is applicable to makes large-size substrate in large-scale production.
In view of foregoing problems, target of the present invention provides the large screen display and the manufacture method thereof of the wiring that a kind of use forms by the droplet method for releasing.Another target of the present invention provides a kind of light-emitting device, wherein forms wiring with expection electrode width by the droplet method for releasing and is that 10 μ m or shorter TFT are arranged in the pixel with channel length.
Another one target of the present invention provides a kind of liquid crystal indicator, wherein forms wiring with expection electrode width by the droplet method for releasing and is that 10 μ m or shorter TFT are arranged in the pixel with channel length.
According to the present invention, optionally discharge the photosensitive conducting material solution by droplet release, optionally be exposed to laser, and develop, can realize precise and tiny wiring figure thus.The present invention can significantly reduce cost, because the material quantity that has shortened graphical process and can reduce to use in the conductive pattern preparation process.Therefore, the present invention can be applied to make large-size substrate.
This conductive material solution comprises the metal or alloy such as Ag, Au, Cu, Ni, Al or Pt; And the photosensitive resin, Photoepolymerizationinitiater initiater, photopolymerization or the solvent that comprise organic polymer resin.Can use novolac resin, acrylic copolymer, methacrylic acid copolymer, cellulose derivative, ring rubber resin etc. as this organic polymer resin.
Photochromics can mainly be divided into minus and eurymeric.When using the minus photochromics, be exposed part and produce chemical reaction, and, then form figure because the developer solution effect only stays the part that chemical reaction takes place.When using the positive photosensitive material, be exposed part and produce chemical reaction, and the part of generation chemical reaction is dissolved, then only stays and is not exposed part, then forms figure.
In addition, because the width of wiring is by the decision of the precision of laser emission, the wiring width that can obtain to expect, and irrelevant with the viscosity of drop or quantity or nozzle diameter.Usually, wiring width changes according to the material solution of nozzle release and the contact angle between the substrate.For example, diameter is that the number of droplets that nozzle discharged of 50 μ m * 50 μ m is 30 to 200pl in the typical ink discharge device, and the wiring width that is obtained is 60 to 300 μ m.According to the present invention, can obtain the narrow wiring of width (for example electrode width is 3 μ m to 10 μ m) by laser explosure.The material solution amount that nozzle discharged that diameter is littler than typical nozzle is 0.1 to 40pl, and the wiring width that is obtained is 5 to 100 μ m.
When using the droplet method for releasing to form wiring figure, can dropwise discharge conductive material off and on the form of putting, perhaps discharge conductive material continuously with belt-like form from nozzle.In the present invention, discharge conductive material, can form conductive pattern rightly by form with point or band.When forming the relatively large wiring figure of width, discharge the method that conductive material forms wiring by form and can obtain higher throughput rate with band shape.
Before discharge forming wiring figure, preferably on the whole surface of substrate or selection area, be formed for improving fusible basalis by droplet.Perhaps, carry out substrate pretreatment.As the formation method of basalis, can carry out by spraying or the method for the sputter catalysis material (titanium dioxide (TiO that on whole surface, drips x), strontium titanates (SrTiO 3), cadmium selenide (CdSe), potassium tantalate (KTaO 3), cadmium sulfide (CdS), zirconia (ZrO 2), niobium oxide (Nb 2O 5), zinc paste (ZnO), iron oxide (Fe 2O 3), tungsten oxide (WO 3)) processing.Perhaps, can carry out by ink-jet or collosol and gel selectivity and form organic material (polyimide, acrylic acid or use a kind of coating insulation film of material, this material has by the skeleton that silicon (Si)-oxygen (O) key forms, and this material comprise be selected from the group that comprises hydrogen, fluoride, alkyl and aromatic hydrocarbon at least one as substituting group) processing.
The photocatalysis material is meant the material with photo-catalysis function, and this material can produce photocatalytic activity when being subjected to light (wavelength is 400nm or littler, preferably, 380nm or the littler) radiation of ultraviolet region.Be discharged on the photocatalysis material as the conductor that the droplet method for releasing of representative will be mixed into solvent if use, then can realize precise and tiny drafting with ink ejecting method.
To TiO xBefore the emission light, TiO xHave lipophilicity but do not have water wettability, be i.e. TiO xHas dehydration property.By optical radiation, TiO xProduce photocatalytic activity and lose lipophilicity.In addition, according to light radiation time, TiO xCan have lipophilicity and water wettability simultaneously.
By transition metal (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W etc.) is doped in the photocatalysis material, the light of (wavelength be 400 to 800nm) can improve photocatalytic activity or produce photocatalytic activity because in the visible-range.Since can be by photocatalysis material decision optical wavelength, optical radiation refers to that emission wavelength can produce the light of the photocatalytic activity of photocatalysis material.
Use with ink ejecting method and carry out optical radiation simultaneously, can discharge the conductor that is mixed in the solvent as the droplet method for releasing of representative.
On whole surface, form and to produce after the photocatalysis material of photocatalytic activity by optical maser wavelength, optionally, only adjust by radiation areas to this photocatalysis material emission laser.In addition, when carrying out laser emission, use, can discharge the conductor that is mixed in the solvent with the droplet method for releasing of ink ejecting method as representative.
Water wettability is meant easier of the attribute of water infiltration.Superhydrophilic is meant that contact angle is not more than 30 °, is not more than 5 ° state especially.On the other hand, dehydration property is meant hardly and can be not less than 90 ° attribute by water infiltration and contact angle.Similarly, lipophilicity is meant the easier attribute that is moistened by oil immersion, and de-oiling is meant hardly the attribute that can be moistened by oil immersion.In addition, contact angle is meant the angle between the tangent line of the tangent line on surface and the droplet of the droplet edge of dripping.
Conductive material solution have flowability or use the droplet method for releasing to discharge conductive material solution and form wiring cure in the process mobile the increase time, occur owing to drip the risk that is difficult to form precise and tiny figure.If the wiring gap is narrow, the risk that figure is in contact with one another then appears.According to the present invention, even form wide figure, sneak into photochromics by the conductive material solution that accurately exposes to needs and develop, can obtain precise and tiny figure.
For example, when making large-sized monitor, preferably make to have such as the bus of grid wiring and discharge the wide width that forms, and gate electrode is preferably made and had narrow width by droplet.In this example, the conductive material solution that use comprises the positive photosensitive material forms grid wiring and first grid electrode, optionally only with the part (part that hope be removed) of Laser emission to first grid electrode, then the part of stimulated radiation is developed, and then can form by this development and be processed into the second thin gate electrode.When the conductive material solution that use comprises the minus photochromics forms grid wiring and first grid electrode, optionally only with the part (part that hope stay) of Laser emission to this grid wiring and first grid electrode, then the part of stimulated radiation is developed, and then can form by this development and be processed into the second thin gate electrode.
Not only can form the gate electrode of TFT, can also form negative electrode, power lead, lead-in wire of anode, the light-emitting component of source electrode, drain electrode, light-emitting component etc.
Whether light can pass glass substrate depends on Wavelength of Laser.The back side of glass substrate can be exposed to this laser.By with the glass back exposure, can at first the conductive material exposure of interface edge will be positioned at.Therefore, can improve the wiring and basalis between adhesiveness or the adhesiveness between wiring and the substrate.
When making bottom gate TFT, use gate electrode to form source electrode and drain electrode by back-exposure in self aligned mode as mask.
The invention provides a kind of semiconductor device, comprise: be formed at grid wiring or gate electrode on the first substrate insulating surface; Be formed at the gate insulating film on this grid wiring or the gate electrode; The semiconductor layer that comprises channel formation region on this gate insulating film; Be formed at source electrode or drain electrode on this semiconductor layer; And be formed at pixel electrode on this source electrode or the drain electrode, and wherein the width of the channel length of this channel formation region and gate electrode is identical, and the width of gate electrode and source electrode are identical with spacing between the drain electrode.
In aforementioned structure, the active layer of thin film transistor (TFT) is amorphous monocrystalline (the amorphous single crystalline) semiconductive thin film that has added hydrogen or hydrogen halides, perhaps is polycrystalline semiconductor thin film.
The present invention can be applied to any TFT structure.For example, can use bottom gate (reverse interleaved) TFT or top grid (interlocking) TFT.In addition, be not limited to single grid TFT, TFT may be made in the multiple-grid TFT with a plurality of channel formation regions, perhaps is double grid TFT.
Can suitably use amorphous semiconductor films, comprise crystal structure semiconductive thin film, have the active layer of the compound semiconductor film etc. of amorphous crystal structure as TFT.Can use the active layer of half amorphous (semiamorphous) semiconductive thin film (microcrystalline semiconductor film) as TFT, this half amorphous semiconductor films has the stable elicit illness state of intermediate structure, free energy between non crystalline structure and crystal structure (comprising monocrystalline and polycrystalline) and has shortrange order and the crystalline region of distortion of lattice.
In being equipped with an aforementioned structure, source electrode or drain electrode comprise photochromics.
According to using droplet to discharge the figure preparation method who forms conductive layer, form figure according to following program, that is, discharge the figure that is processed to particle and prepare material, and solidify this releasable material by curing fusing or molten solder (fusion bond).Therefore, figure is in the polycrystalline state that comprises many grain boundaries usually, and has column structure by most figures of formation such as sputter.
The conductive layer that uses the droplet method for releasing to form is the material that comprises resin.This resin is to contain the material such as bonding agent that comprises in the droplet of conductive material.By hybrid resin, solvent and metal nanoparticle, can use ink ejecting method to discharge this material.
In aforementioned structure, semiconductor device comprise first substrate, second substrate and be clipped in this first substrate and second substrate between liquid crystal.Alternatively, semiconductor device comprises a plurality of light-emitting components and thin film transistor (TFT), and this light-emitting component has negative electrode, includes the layer and the anode of organic compounds.
In each aforementioned structure, semiconductor device is changed to image-sound bidirectional communication apparatus or is the general remote-control device shown in Figure 33 D example.
The invention provides a kind of manufacture method of semiconductor device, comprise following steps: adopt droplet to discharge on the insulating surface that the conductive material that will comprise photochromics is discharged into substrate and form the first conductive film figure; Optionally with this first conductive film graph exposure in laser; The first conductive film figure that is exposed by development forms the width second conductive film figure narrower than the first conductive film figure; Form the gate insulating film that covers this second conductive film figure; And on this gate insulating film, form semiconductive thin film.
In aforementioned structure, comprise conductive material containing element substance A g, Au, Cu, Ni, Al and the Pt of photochromics or comprise the compound of these elemental substances.
In aforementioned structure, this photochromics is minus or positive photosensitive material.
The invention provides a kind of manufacture method of semiconductor device, comprise following steps: on the insulating surface of substrate, form gate electrode; Form the gate insulating film that covers this gate electrode; On this gate insulating film, form first semiconductive thin film; On this first semiconductive thin film, form and comprise second semiconductive thin film that injects n type or p type electrical conductance impurity element; Use the droplet method for releasing to be discharged into and form the first conductive film figure on this second semiconductive thin film by the conductive material that will comprise the positive photosensitive material; By optionally to substrate surface emission laser and with this first conductive film graph exposure in laser; The first conductive film figure that is exposed by development forms source electrode and drain electrode; And use source electrode and drain electrode as this first semiconductive thin film of mask etching and second semiconductive thin film.
The invention provides a kind of manufacture method of semiconductor device, comprise following steps: on the insulating surface of substrate, form gate electrode; Form the gate insulating film that covers this gate electrode; On this gate insulating film, form first semiconductive thin film; On this first semiconductive thin film, form and comprise second semiconductive thin film that injects n type or p type electrical conductance impurity element; Use the droplet method for releasing to be discharged into and form the first conductive film figure on this second semiconductive thin film by the conductive material that will comprise the minus photochromics; By optionally be to substrate back emission laser and with the gate electrode mask and with this first conductive film graph exposure in laser; The first conductive film figure that is exposed by development forms the identical source electrode and the drain electrode of width of width and gate electrode in self aligned mode; And use source electrode and drain electrode as this first semiconductive thin film of mask etching and second semiconductive thin film.
Can obtain precise and tiny wiring figure according to the present invention by the droplet method for releasing.Because shortened graphical process and reduced material quantity, the present invention can significantly reduce cost.Therefore, the present invention can be applied to make large-size substrate.
Description of drawings
Figure 1A to 1E shows the cross sectional view of the manufacture process of active matrix light-emitting device;
Fig. 2 A to 2D shows the cross sectional view of the manufacture process of active matrix light-emitting device;
Fig. 3 is the vertical view of pixel;
Fig. 4 shows the laser beam drawing apparatus;
Fig. 5 A to 5D shows the manufacture process (embodiment 2) of light-emitting device;
Fig. 6 A to 6D shows the manufacture process (embodiment 3) of light-emitting device;
Fig. 7 A to 7D shows the manufacture process (embodiment 4) of light-emitting device;
Fig. 8 stops the cross sectional view (embodiment 5) of (channel stop) TFT for raceway groove;
Fig. 9 is the cross sectional view (embodiment 6) of staggered TFT;
Figure 10 is the vertical view (embodiment 1) according to luminous display unit of the present invention;
Figure 11 is the vertical view (example 1) according to luminous display unit of the present invention;
Figure 12 A to 12C is the cross sectional view (example 2) that shows the example of light-emitting device;
Figure 13 A to 13F is for being applied to the explanation view (example 3) of the dot structure of EL display panel according to the present invention;
Figure 14 A to 14C is the cross sectional view (example 4) of luminous display module;
Figure 15 A to 15C is the vertical view and the cross sectional view (example 5) of display panel;
Figure 16 is the skeleton view (example 7) of droplet releasing means;
Figure 17 A to 17E is the cross sectional view (embodiment 7) of the manufacture process of AM-LCD;
Figure 18 A to 18D is the cross sectional view (embodiment 7) of the manufacture process of AM-LCD;
Figure 19 is the vertical view (embodiment 7) of pixel;
Figure 20 A to 20D is the view (embodiment 8) that the manufacture method of liquid crystal indicator is shown;
Figure 21 A to 21D is the view (embodiment 9) that the manufacture method of liquid crystal indicator is shown;
Figure 22 A to 22D is the view (embodiment 10) that the manufacture method of liquid crystal indicator is shown;
Figure 23 stops the cross sectional view (embodiment 11) of TFT for raceway groove;
Figure 24 is the cross sectional view (embodiment 12) of staggered TFT;
Figure 25 A to 25D is skeleton view and the cross sectional view (example 6) that the droplet release of liquid crystal is shown;
Figure 26 A to 26D shows the vertical view (example 6) of carrying out technological process;
Figure 27 A and 27B are the cross sectional view (example 6) that sticker and taping process are shown;
Figure 28 A and 28B are the vertical view (example 6) of Liquid Crystal Module;
Figure 29 is the cross sectional view (example 6) that the structure of active matrix liquid crystal display apparatus is shown;
Figure 30 is the block scheme (example 6) of driving circuit;
Figure 31 is the circuit diagram (example 6) of driving circuit;
Figure 32 is the circuit diagram (example 6) of driving circuit; And
Figure 33 A to 33D shows the example of electrical equipment.
Embodiment
Explain embodiments of the invention hereinafter.
Embodiment 1
Figure 1A to 2D shows the manufacture method of active matrix light emitting display device, and this luminous display unit comprises the channel-etch type TFT as on-off element.
At the adhering basalis 11 that is formed on the substrate 10 between the material layer that improves substrate 10 and discharge formation subsequently by droplet.Because basalis 11 is made the thickness that has as thin as a wafer, and does not require that this basalis always has layer structure.Can regard preparation basalis 11 as substrate pretreatment.Can carry out by spray or sputter with photocatalyst material (titanium dioxide (TiO x), strontium titanates (SrTiO 3), cadmium selenide (CdSe), potassium tantalate (KTaO 3), cadmium sulfide (CdS), zirconia (ZrO 2), niobium oxide (Nb 2O 5), zinc paste (ZnO), iron oxide (Fe 2O 3), tungsten oxide (WO 3)) drop in whole lip-deep processing.Alternatively, can carry out the processing that forms organic material (polyimide, acrylic acid or use a kind of coating coating insulating film of material, this material have comprise be selected from least a of the group that comprises hydrogen, fluoride, alkyl and aromatic hydrocarbon by the skeleton that silicon (Si)-oxygen (O) key forms and this material) by ink-jet or collosol and gel selectivity as substituting group.
Explain the example that conductive material is discharged into the situation on the substrate at this, wherein, execution is used to improve adhering substrate pretreatment.Yet, the invention is not restricted to this.For on the conductive layer of another material layer (for example, organic layer, inorganic layer or metal level) or release, discharging formation one material layer (for example organic layer, inorganic layer or metal level) situation, can carry out TiO by droplet xDeposition processes is to improve the adhesiveness between a material layer and another material layer.That is to say, discharge the situation that is released to draw by droplet, wish between the interface between last conductive material layer and the following conductive material layer, to insert substrate pretreatment to improve their adhesiveness for conductive material.
Basalis 11 not only can use catalysis material, can also use 3d transition metal (Sc, Ti, Cr, Ni, V, Mn, Fe, Co, Cu, Zn etc.) and oxide thereof, nitride, oxynitride (oxynitride).
Substrate 10 can use the non-alkali glass substrate of being made by fusion technique or floating method (Float Technology), for example barium borosilicate glass, alumina borosilicate glass or aluminosilicate glass; Perhaps use has the stable on heating plastic base of the treatment temperature that can resist this manufacture process etc.
Then, by being that the droplet of representative discharges the conductive material solution that drips to form conductive pattern 12 (Figure 1A) with the ink-jet.As the conductive material that comprises in this conductive material solution, can use gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), tantalum (Ta), bismuth (Bi), plumbous (Pb), indium (In), tin (Sn), zinc (Zn), titanium (Ti) or aluminium (Al), the alloy of previous materials, the disperse nano particle or the silver halide fine granular of previous materials.Especially, grid wiring preferably has low resistance.Therefore, from considering than resistance value angle, grid wiring is preferably by by with gold, silver or copper dissolution or be dispersed in the material that forms in the solvent and make.More preferably, use has low-resistance silver or copper one-tenth.In addition, the situation for using silver or copper also provides barrier film to prevent diffusion of contaminants.This solvent is corresponding to such as the ester of butyl acetate, such as the alcohol of isopropyl alcohol or such as the organic solvent of acetone.By the concentration of control solvent or by adding surfactant etc., suitably adjustment form surface tension and viscosity.
Figure 16 shows an example of droplet releasing means.
In Figure 16, reference number 1500 expression large substrates, 1504 expression imaging devices, 1507 expression worktable, 1511 expressive notations, and 1503 expressions are provided with the zone of a panel.Width is that this droplet releasing means is equipped with the width of a width and a panel identical a 1505a, 1505b, and 1505c, thus by zigzag or to and fro travelling table scan this panel and form the material layer figure rightly.These can have the width identical with large-size substrate, yet as shown in figure 16, the width by making described head and the width of a panel are complementary and can make that operating becomes is more prone to.In addition, in order to improve output, preferably when releasable material, make worktable keep moving.
1505a, 1505b, 1505c and worktable 1507 preferably have the temperature control function.
Spacing between head (tip of nozzle) and the large substrates is about 1mm.Dwindle this spacing and can improve aimed at precision.
In Figure 16, along the 1505a, the 1505b that become three lines on the direction of scanning, and 1505c can form different layers respectively, perhaps discharge identical materials.This three stature discharges same material and when graphically forming interlayer dielectric, can improve processing power.
Droplet releasing means shown in Figure 16 can be by fixing described head and moving substrate 1500 and scanning substrate 1500, and can and move described head and scanning substrate 1500 by fixing base 1500.
A 1505a, the 1505b of this droplet releasing means, each among the 1505c are connected to control device.These heads can graphing, by this figure of programming in advance by this control device of computer control.Amount by the pulse voltage sustained release that applies.The timing of this drafting for example can be based on the mark that forms on the substrate.Perhaps, can determine basic point according to the edge of substrate.This basic point converts it into digital signal by surveying such as the imaging device of CCD by image processing apparatus, and is discerned and produced control signal by computing machine.Then, this control signal is sent to control device.Certainly, be stored in the storage medium about the information that should be formed at the figure on the substrate.This control signal is sent to control device, thereby controls each head of droplet releasing means respectively.
Then, thus optionally use the expose part (Figure 1B) of this conductive pattern of laser emission.Photochromics is included in the conductive material solution to be discharged in advance, thereby causes because the chemical reaction due to the laser.As for this photochromics, the example of using the minus photochromics has been described, this minus photochromics keeps the part that chemical reaction is taken place by laser emission.By laser emission, can obtain to have accurate graphics shape, have the wiring of thin width especially.
Explain the laser beam drawing apparatus with reference to figure 4.Laser beam drawing apparatus 401 comprises the personal computer (hereinafter being called PC) 402 of the various controls when being used to carry out emission of lasering beam, the laser oscillator 403 that is used for outgoing laser beam, the power supply 404 of laser oscillator 403, the optical system (ND filtrator) 405 that is used for attenuated laser beam, the acousto-optic modulator (AOM) 406 that is used for modulated laser intensity, be used to amplify or dwindle the lens of lasing aperture, the optical system 407 that comprises catoptron of being used to change optical path etc., substrate mechanically moving device 409 with X worktable and Y worktable, be used for D/A conversion portion 410 that the control data from PC output is carried out digital-to-analog conversion, according to the driver 411 of controlling this acousto-optic modulator 406 from the aanalogvoltage of this D/A conversion portion output, and output drive signal is with the driver 412 of driving substrate mechanically moving device 409.
The laser oscillator that can use can vibrate ultraviolet light, visible light or Infrared is as laser oscillator 403.Excimer laser oscillator be can use,, YA6, GdVO used such as mixed Cr, Nd, Er, Ho, Ce, Co, Ti or Tm such as the gas laser oscillator of He, He-Cd, Ar, He-Ne or HF such as KrF, ArF, XeCl or Xe 4, YVO 4, YLF or YalO 3The solid laser oscillator of crystal, or such as the semiconductor laser oscillator of GaN, GaAs, GaAlAs or InGaAsP as this laser oscillator.In solid laser oscillator, the first harmonic that preferably adopts first-harmonic is to quintuple harmonics.
Explain the method that exposes a photosensitive material the direct drawing apparatus of laser beam hereinafter.Photochromics used herein is meant the conductive material (comprising photochromics) that will be made into conductive pattern.
In case substrate 408 is installed on the substrate mechanically moving device 409, PC 402 just surveys the position of the mark that is attached at this substrate by the camera outside this drafting.Then, PC 402 is used for moving the mobile data of this substrate mechanically moving device 409 based on the graphing data and producing of the position data of the mark that detects and input in advance.Then, the laser beam of exporting from laser oscillator 403 is decayed by optical system 405, uses PC 402 by the amount of driver 411 by guide sound photomodulator 406 output light, controls this laser and makes it to have predetermined amount.On the other hand, the laser beam of exporting from acousto-optic modulator 406 has changed its light path and beam shape by optical system 407, and is assembled by lens.Then, laser beam is launched into the photochromics that is formed on the substrate, thereby this photochromics is exposed.Simultaneously, carry out mobile control according to the mobile data that produces by PC 402 along directions X and Y direction to substrate mechanically moving device 409.Therefore, laser beam is launched into predetermined point so that photochromics is exposed.
The part of energy that is transmitted into the laser of photochromics is converted into heat, and the part photochromics is reacted.Therefore, the width of figure becomes greater than the width of laser beam.In addition, because short wavelength's the easier beam diameter that makes of laser diminishes, the laser beam of therefore preferably launching the short wavelength has the figure of superfine width with formation.
By optical system the shape of laser beam spot on this photochromics surface is processed into point-like shape, circle, ellipse, rectangle or linear (say in the strictness and be elongated rectangle).This laser beam spot shape can be circular.Yet this laser beam spot shape is preferably linear, because the linear laser spot can form the uniform figure of width.
The example of the laser beam drawing apparatus shown in Fig. 4 has been described, this device by launching laser to substrate surface with this base plate exposure in laser.Yet, can use the optical system with suitable variation or the laser beam drawing apparatus of substrate mechanically moving device, this device by substrate back is launched laser with this base plate exposure in laser.
At this, the emission of lasering beam optionally by moving substrate.Yet, the invention is not restricted to this.Can be by along X-Y direction of principal axis scanning laser beam and emission of lasering beam.In this case, optical system 407 preferred polygon mirror or the galvanometer mirrors of using.
Then, use etchant (perhaps developing solution) to develop removing redundance, and cure to form metal line 15 (Fig. 1 C) as gate electrode or grid wiring.
Form metal line 15, also formed the wiring 40 that extends to the terminal part.Although not shown, can thereby forming power lead provides electric current to light-emitting component.In addition, if desired, can form the wiring of electrode for capacitors or capacitor to form retention volume.
For the situation of using positive photochromics, can use laser emission part to be removed to cause chemical reaction, can dissolve this part that chemical reaction takes place by etchant.
Perhaps, can drip, carry out after indoor oven dry and the prebake conductive material solution exposure by laser emission.
Then, use plasma CVD or sputter to deposit gate insulating film 18, semiconductive thin film 19 and n N-type semiconductor N film 20 successively.
As gate insulating film 18, can use by what plasma CVD obtained to comprise monox, silicon nitride or silicon oxynitride material as its principal ingredient.Discharge and cure by the droplet that uses siloxane polymer, gate insulating film 18 can be made the SiO that comprises hydrocarbyl group xFilm.
Form this semiconductive thin film by method of vapor-phase growing, sputtering method or hot CVD method by amorphous semiconductor films or half amorphous (semiamorphous) semiconductive thin film, each in the said method is all used with silane or the germane semiconductor material gas as representative.
By using SiH 4Or SiH 4With H 2The amorphous silicon membrane that obtains of the plasma CVD of mixed gas can be used as this amorphous semiconductor films.Half amorphous silicon membrane that obtains by the plasma CVD that uses following mixed gas can be used as this half amorphous semiconductor films: use H 2Dilute 3 to 1000 times SiH 4Mixed gas, air-flow ratio are 20～40: 0.9 (Si 2H 6: GeF 4) Si 2H 6And GeF 4Mixed gas, Si 2H 6And F 2Mixed gas or SiH 4And F 2Mixed gas.In addition, because the interface between half noncrystal membrane and the substrate film, half amorphous semiconductor films can keep crystallinity, so preferably use half amorphous semiconductor films.
To using SiH 4And F 2Half amorphous silicon membrane that obtains of the plasma CVD of mixed gas carry out laser emission, can further improve crystallinity.
Can be by using silane gas and hydrogen phosphide to form n N-type semiconductor N film by amorphous semiconductor films or half amorphous semiconductor films that plasma CVD forms.Although, can provide this n N-type semiconductor N film 20 on demand in subsequent process because the contact resistance between semiconductive thin film and (forming) electrode becomes littler and n N-type semiconductor N film 20 preferably is provided.Then, provide mask 21, by optionally this semiconductive thin film 19 of etching and n N-type semiconductor N film 20 obtain island shape semiconductor film and n N-type semiconductor N film (Fig. 1 D).The method that forms mask 21 can adopt droplet to discharge or printing (letterpress, surface printing, intaglio printing, serigraphy etc.).Can discharge or print by droplet and directly form the expectation mask graph.Perhaps, adopt droplet to discharge or print to form the resist figure roughly and optionally this resist figure is exposed to laser, form the precise and tiny resist figure of high-resolution.
By using laser beam drawing apparatus shown in Figure 4, resist can expose.In this case, form this Etching mask 21 by being exposed to laser as the photochromics of resist.
Then, after removing mask 21, provide a mask (not shown), and optionally this gate insulating film of etching to form contact hole.In addition, remove the gate insulating film of marginal portion.As the method that forms mask, discharge by normal optical lithography or droplet and to form the resist figure, perhaps be exposed to laser and development forms the resist figure by coating eurymeric resist on whole surface and with it.In the active matrix light-emitting device,, thereby has coupling part through gate electrode and gate insulation layer and the wiring of top stratiform for each pixel provides a plurality of TFT.
Optionally discharge the compound that comprises conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) by droplet release and form source wiring or drain electrode wiring 22,23 and extraction electrode 17.Similarly, form the power lead that electric current is provided to light-emitting component, and form (unshowned) connecting wiring (Fig. 1 E) in the terminal part.
Then, use source wiring or drain electrode wiring 22,23 upper strata, thereby obtain the state shown in Fig. 2 A as mask etching n N-type semiconductor N film and semiconductive thin film.In this stage, finished channel-etch TFT, this TFT has each all as channel formation region 24, source region 26 and the drain region 25 of active layer.
Form diaphragm 27 and be subjected to contaminating impurity (Fig. 2 B) to prevent channel formation region 24.The material of diaphragm 27 can use by what sputter or plasma CVD formed and comprise silicon nitride or silicon oxynitride (the silicon nitride oxide) material as its principal ingredient.In this example, described and used the example of diaphragm, yet always do not needed to provide this diaphragm.
Then, by droplet release optionally formation interlayer dielectric 28.The material of interlayer dielectric 28 can adopt the resin material such as epoxy resin, acryl resin (acrylic resin), phenolics, novolac resin, third rare resin (acryl resin), melamine resin or urethane resin.Discharge the infiltrative organic material that has that forms such as benzocyclobutene (benzocyclobutene), parylene, flare or polyimide by droplet, the compound-material that polymerization by siloxane polymer etc. forms comprises the compound of water-soluble homopolymer and water solubility copolymer etc.The method that forms interlayer dielectric 28 is not limited to droplet and discharges.Can use coating, plasma CVD etc. on whole surface, to form interlayer dielectric 28.
Then, use interlayer dielectric 28, thereby on the part of source wiring or drain electrode wiring 22,23, form the bossing (pillar) 29 that forms by conductive component as the mask etching diaphragm.Can be by repeating release and curing the compound that comprises conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) and pile up this bossing (pillar) 29.
Then, on interlayer dielectric 28, form first electrode 30 (Fig. 2 C) that contacts with this bossing (pillar) 29.Similarly, form and wiring 40 terminal electrodes that contact 41.Here described the example of n channel-type drive TFT, therefore first electrode 30 is preferably as negative electrode.Pass the situation of first electrode 30 for light, form this first electrode 30 by forming predetermined pattern, wherein discharge or printing and cure and by comprising tin indium oxide (ITO), comprising tin indium oxide (ITSO), zinc paste (ZnO), the tin oxide (SnO of monox by droplet 2) compound that waits forms this predetermined pattern.Then, form first electrode 30 and terminal electrode 41.In situation, discharge and cure to comprise by droplet and form this predetermined pattern for the compound of its principal ingredient such as the metallic particles of Ag (silver), Au (gold), Cu (copper), W (tungsten) or Al (aluminium) by first electrode, 30 reflection rays.Then, form first electrode 30 and terminal electrode 41.Perhaps, can be by sputter transparent conductive film or reflective conductive film, and discharge by droplet and to form mask graph, and then carry out etching, form first electrode 30.
Fig. 3 shows the example that is in the vertical view of the pixel in stage shown in Fig. 2 C.In Fig. 3, the cross section that A-A ' along the line is intercepted is corresponding to the cross sectional view on the right side of this pixel portion among Fig. 2 C, and the cross section that B-B ' along the line is intercepted is corresponding to the cross sectional view in the left side of this pixel portion among Fig. 2 C.In Fig. 3, use the numeral components identical identical with Figure 1A to 2D.In Fig. 3, dotting to become the part of embankment 34 marginal portions that form subsequently.
Owing to show the example that diaphragm 27 is provided, separately form interlayer dielectric 28 and bossing (pillar) 29.In the situation that this diaphragm is not provided, can use a device to discharge and form this interlayer dielectric 28 and bossing (pillar) 29 by droplet.
Then form the embankment 34 that covers first electrode, 30 peripheries.Embankment 34 (being also referred to as embankment) is to be made by the material that comprises silicon, organic material and compound-material.In addition, embankment 34 also can use porous membrane.Preferably prepare this embankment 34 by photochromics or such as the non-photosensitive materials of acrylic acid or polyimide, because embankment 34 will be made with radius-of-curvature continually varying curved edge part, and can under the situation that does not have the stepped appearance cut, form the upper film of embankment 34.
According to aforementioned process, formed the TFT substrate that is used for light emitting display panel, wherein on substrate 10, formed the bottom gate (being also referred to as reverse interleaved) and first electrode.
Then, form layer, that is, include the layer of organic compounds 36 as electroluminescence layer.The layer that includes organic compounds 36 has hierarchy, wherein forms each layer by vapour deposition or coating.For example, on negative electrode, form electron transport layer (electron injecting layer), luminescent layer, hole transport layer and hole injection layer successively.
This electron transport layer comprises electric charge and injects-transport material.As electric charge injection-conveying material with high electron transport performance, can use metal complex with chinoline backbone or benzoquinoline skeleton, for example three (oxine (quinolinolate)) aluminium (is abbreviated as Alq 3), three (5-methyl-oxine) aluminium (is abbreviated as Almq 3), two (10-carboxyl benzene (hydroxybenzo) [h]-quinoline (quinolinato)) beryllium (is abbreviated as BeBq 2) or two (2-methyl-oxine)-4-phenylphenol (phenylphenolato) aluminium (being abbreviated as BAlq).Transport the material of performance as having high hole, can use aromatic amine (promptly having phenyl ring-nitrogen key) compound, for example 4,4 '-two [N-(1-naphthyl)-N-phenyl-amino]-biphenyl (are abbreviated as α-NPB), 4,4 '-two [N-(3-aminomethyl phenyl)-N-phenyl-amino]-biphenyl (being abbreviated as TPD), 4,4 '; 4 "-three (N, the N-diphenyl amino)-triphenylamine (being abbreviated as TDATA) and 4,4 ', 4 " [N-(3-aminomethyl phenyl)-N-phenyl amino]-triphenylamine (being abbreviated as MTDATA)-three.
At electric charge injection-conveying material, as the material that has high electronics injection efficiency especially, can use alkaline metal or alkaline earth metal compounds, for example lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2) etc.In addition, can use mixtures of material, such as Alq with high electron transport performance 3With earth alkali metal such as magnesium (Mg).
Luminescent layer is made by electric charge injection-conveying material and luminescent material, and these two kinds of materials all include organic compounds and mineral compound.Luminescent layer comprise based on molecularity from the group that comprises following material, select-kind or multiple material make the layer: low molecular weight organic compound, the medium molecule weight organic compounds (may be defined as do not have the distillation or the dissolving attribute organic compound aggregation (preferably, molecular number is not more than 10 aggregation), perhaps be defined as the organic compound that strand length is not more than 5 μ m (preferably being not more than 50nm)), and the high molecular organic compound, and have that electric charge injects-transport performance or the hole inject-transport performance mineral compound can with this luminescent layer combination.
Can use the material of various materials as luminescent layer.As the low-molecular-weight luminous organic material, can use 4-dicyano methylene-2-methyl-6-(1,1,7,7-tetramethyl julolidyl-9-enyl)-4H-pyrans (being abbreviated as DCJT), 4-dicyano methylene-2-t-butyl-6-(1,1,7,7-tetramethyl julolidyl-9-enyl)-4H-pyrans (being abbreviated as DPA), periflanthene, 2,5-dicyano-1,4-two (10-metoxy-1,1,7,7-tetramethyl julolidyl-9-enyl) benzene, N, N '-dimethylquinacridone (being abbreviated as DMQd), coumarin 6, cumarin 545T, three (oxine) aluminium (is abbreviated as Alq 3), 9,9 '-biantrile, 9,10-biphenyl antracene (being abbreviated as DPA), 9,10-two (2-naphthyl) anthracene (being abbreviated as DNA) etc.Can also use other material.
The high molecular luminous organic material has the physical strength bigger than low-molecular-weight luminous organic material.Therefore, the light-emitting component of being made by the high molecular luminous organic material can keep high durability.Can make the light-emitting component that uses the high molecular luminous organic material with comparalive ease, because can form luminescent layer by coating.The structure of the light-emitting component of the structure fundamental sum use low-molecular-weight luminous organic material of the light-emitting component of use high molecular luminous organic material is identical,, has the structure of negative electrode/organic luminous layer/anode that is.Yet, forming in the situation of luminescent layer by the high molecular luminous organic material, be difficult to be formed on formed hierarchy in the situation of using the low-molecular-weight luminous organic material.Therefore, use the light-emitting component of high molecular luminous organic material to be made with two-layer hierarchy, particularly, be negative electrode/luminescent layer/hole transport layer/anode.
Glow color is by the material decision of luminescent layer.Therefore, can form the light-emitting component that presents the expection emission by the material of selecting luminescent layer.For the high molecular electroluminescent material that is used to form luminescent layer, can use poly-phenylene vinylene (ppv) support (polyparaphenylene vinylene) material, polyparaphenylene's material, polythiophene material, poly-fluorene material.
As poly-phenylene vinylene (ppv) timbering material, having of can mentioning poly-(to phenylene vinylidene) [PPV] derivant, poly-(2,5-dialkoxy-1, the 4-phenylene vinylidene) [RO-PPV], poly-(2-(2 '-ethyl-six oxygen (hexoxy))-5-methoxyl-1, the inferior ethene of 4-phenylene) [MEH-PPV], poly-(2-dialkoxy phenyl)-1, the 4-phenylene vinylidene) [ROPh-PPV] etc.As polyparaphenylene's material, can use the derivant of polyparaphenylene [PPP], poly-(2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly-(2,5-two or six oxygen (dihexoxy)-1,4-phenylene) etc.As the polythiophene material, can mention polythiophene [PT] derivant, poly-(3-alkylthrophene) [PAT], (3-hexyl thiophene) [PHT], poly-(3-cyclohexyl thiophene) [PCHT], poly-(3-cyclohexyl-4-methylthiophene) [PCMHT], poly-(3,4-dicyclohexyl thiophene) [PDCHT], poly-[3-(4-octyl phenyl)-thiophene] [POPT], poly-[3-(4-octyl phenyl)-2,2-bithiophene] [PTOPT] etc.As poly-fluorene material, that can mention has poly-fluorenes [PF] derivant, poly-(9,9-dialkyl group fluorenes) [PDAF], poly-(9, the 9-dioctyl fluorene) [PDOF] etc.
By at anode and have to insert between the high molecular luminous organic material of light emitting properties and have the high molecular luminous organic material that the hole transports attribute, can improve the performance that the hole is injected from anode.Usually, the method coating tool by spin coated has the hole to transport the high molecular luminous organic material of attribute and the acceptor material that is dissolved in the water.Have the hole and transport the high molecular luminous organic material of attribute and be not dissolved in the organic solvent, therefore, this material can be stacked on the luminous organic material with luminescent properties.Transport the high molecular luminous organic material of performance as having the hole, can use PEDOT with as the potpourri of the camphorsulfonic acid (CSA) of acceptor material, polyaniline [PANI] with as the potpourri of the polystyrolsulfon acid [PSS] of acceptor material etc.
Except aforementioned singlet excitation light-emitting material, luminescent layer can also use the ternary excitation material that comprises metal complex etc.For example, between emitting red light pixel, green emitting pixel and blue-light-emitting pixel, form relatively short emitting red light pixel of half intensity life-span, form other pixel by the singlet excitation light-emitting material by ternary excitation light-emitting material.Ternary excitation light-emitting material has such characteristic, that is, and and for the required power consumption of the brightness that obtains specified level is lower than the singlet excitation light-emitting material, because should have high luminescence efficiency by the three-state excitation light-emitting material.When using ternary excitation light-emitting material to form the emitting red light pixel, reliability can improve, because this light-emitting component needs a spot of electric current.In order to reduce power consumption, can form emitting red light pixel and green emitting pixel by ternary excitation light-emitting material, form the blue light emitting pixel by the singlet excitation light-emitting material.Use ternary excitation light-emitting material to form the green glow element, can reduce the people is had the power consumption of the green luminescence element of high-visibility.
As the example of ternary excitation light-emitting material, using metal complex is known as the material of adulterant, for example comprises the metal complex of the 3rd transitional element platinum as central metal, perhaps comprises the metal complex of iridium as central metal.Ternary excitation light-emitting material is not limited to these compounds.Can use and have aforementioned structure and have the element that belongs to 8 to 10 families in the periodic table of elements compound as central metal.
Hole transport layer comprises electric charge and injects and conveying material.For example, as material, can mention metal oxide such as molybdena (MoOx), vanadium oxide (VOx), ruthenium-oxide (RuOx), tungsten oxide (WOx), manganese oxide (MnOx) etc. with high hole injection efficiency.In addition, can mention and (be abbreviated as H such as phthalocyanine 2Pc) or the phthalocyanine compound of copper phthalocyanine (CuPc) and so on.
Include in formation before the layer 36 of organic compounds, preferably carrying out has oxygen plasma treatment or carry out thermal treatment in vacuum atmosphere.For the situation of using vapour deposition,, and when this organic compound of deposition, make it towards the substrate scattering by opening baffle plate by the resistance heating evaporation organic compound.The make progress scattering and be deposited on the substrate by the opening portion that provides for metal mask of the organic compound of gasification is provided.In order to realize panchromatic demonstration, every kind of glow color (R, G and B) is carried out the aligning of mask.
Luminescent layer can have this structure, wherein, for realizing panchromatic demonstration, is respectively each pixel the luminescent layer with different luminous wave bands is provided.Typically, form and R (redness), G (green) and the corresponding luminescent layer of B (blueness).In this example, providing each luminous wave band by the emission side in pixel is transparent light filter (nonferrous layer), can improve colour purity and prevent that pixel portion from forming minute surface (reflection).By this light filter (nonferrous layer) is provided, then do not need conventional required circular polarization tabula rasa etc., light can be launched from luminescent layer in addition, and does not have light loss.In addition, the change color that occurs in the time of can further reducing to tilt to watch pixel portion (display screen).
Perhaps, can use to present monochromatic luminous material as the layer 36 that includes organic compounds, and combination color filter or color conversion layer and do not carry out graphically, realize panchromatic demonstration.For example, form when presenting the electroluminescence layer of white or orange luminescence,, can realize panchromatic demonstration by the combination of color filter, color conversion layer or color filter and color conversion layer is provided respectively in the emission side of pixel.For example, can go up at second substrate (hermetic sealing substrate) and form color filter or color conversion layer, and it is adhered to another substrate.In addition, as previously mentioned, all present monochromatic luminous material, color filter and color conversion layer can to discharge formation by droplet.
Present white luminous luminescent layer in order to form, for example by vapour deposition depositing Al q successively 3, the mixed Alq of Nile red of part 3, Alq 3, p-EtTAZ, and TPD (aromatic diamines).When forming luminescent layer by spin coated, material preferably cures by heating in vacuum after coating.For example, can on whole surface, apply poly-(ethylidene dioxy thiophene)/poly-(styrene sulfonate) solution (PEDOT/PSS) and cure as hole injection layer, and on whole surface coating as the doping of luminescent layer pigment (1,1,4,4-tetraphenyl-1,3-butadiene (being abbreviated as TPB), 4-dicyano methylene-2-methyl-6-(p-dimethylamino-styryl)-4H-pyrans (DCM1), Nile red, coumarin 6 etc.) Polyvinyl carbazole (PVK) and cure.
Except aforesaid multilayer, this luminescent layer can also be individual layer.In this example, luminescent layer by disperse have 1,3 of an electron transport attribute, the Polyvinyl carbazole (PVK) that the hole transports attribute that has of 4- oxadiazole derivative (PBD) is made.In addition, the four kinds of pigment (TPB, coumarin 6, DCM1 and Nile red) by the PBD of disperse 30wt% is used as electron transport material and disperse appropriate amount can obtain white luminous.
The previous materials that is used to form the layer that includes organic compounds only is illustrative.Form light-emitting component by each functional layer of piling up such as hole injection-transport layer, hole transport layer, electronics injection-transport layer, electron transport layer, luminescent layer, electronic barrier layer and hole blocking layer.Can form the mixolimnion or the hybrid junctions of aforementioned each layer.The structure of luminescent layer can change.Therefore, replace providing specific electron injection region or luminous zone,, need only this adjustment and fall within the scope of the invention such as for electron injection region or the luminous zone provides electrode or provide the structural adjustment of disperse luminescent material to allow.
Obviously, can carry out monochromatic luminous demonstration.For example, monochrome is luminous can to form background colour (area color) type luminous display unit by utilizing.The passive matrix display part is applicable to background colour pattern display device.Main videotex of this display device or symbol.
Then prepare second electrode 37.Form second electrode 37 as emissive element anode by the transparent conductive film of light-transmissive, the potpourri that for example uses ITO, ITSO or mixed the indium oxide of 2 to 20% zinc paste (ZnO) prepares this second electrode.The structure of this light-emitting component is that the layer 36 that includes organic compounds is inserted between first electrode and second electrode.Should consider work function when selecting the material of first electrode and second electrode.According to dot structure, first electrode or second electrode can be male or female.
The light-emitting component that previous materials forms is luminous under forward bias.Can use passive matrix Driving technique or driven with active matrix technology to drive the pixel of the display device of this light-emitting component formation of use.In any case, apply forward bias and make each pixel luminous with specific time sequence.In addition, each pixel is in the not lasting special time period of luminance.Can not improve the reliability of light-emitting component by applying reverse biased under the luminance.In the regular drive condition, this light-emitting component may be in the degradation modes that reduces luminous intensity, perhaps since in the pixel not the light-emitting zone expansion be in the obviously degradation modes of reduction of brightness.Drive by the AC that applies forward bias and reverse biased, can the delay degradation process, this can improve the reliability of light-emitting device.
Can on the part of second electrode that is not used as the luminous zone, provide auxiliary electrode to reduce the resistance of second electrode 37.
Can be formed for protecting the protective seam of second electrode 37.For example, nitrogen atmosphere or comprise nitrogen and the deposit cavity of the atmosphere of argon gas in, form silicon nitride film by dish type (discotic) target of making by silicon, form diaphragm thus.In addition, can form comprise carbon as the film (DLC film, CN film or amorphous carbon film) of its principal ingredient as this diaphragm, and can provide other deposit cavity that uses CVD.Can form diamond-like carbon film (being also referred to as the DLC film) by plasma CVD (typically being RF plasma CVD, microwave CVD, electron cyclotron resonace (ECR) CVD, hot filament CVD etc.), combustion flame, sputter, ion beam depositing, laser deposition etc.Use hydrogen and hydrocarbon gas (CH 4, C 2H 2, C 6H 6Deng) as deposition reaction gas.By glow discharge ionization reacting gas, these ions quicken to collide the negative electrode that has applied negative self-bias, so deposit this DLC film.In addition, use C 2H 4Gas and N 2Gas can form the CN film as reacting gas.In addition, this DLC film and CN film are dielectric film, are transparent or semitransparent to visible light.Term " is transparent to visible light " refers to that to visible light transmittance be 80 to 100%.Term " is translucent to visible light " refers to that to visible light transmittance be 50 to 80%.Be not always to need to provide this diaphragm.
Then, use the sealant (not shown) to paste hermetic sealing substrate 35 to seal this light-emitting component.Transparent filling material 38 has been filled in the space of sealed dose of encirclement.Filling material 38 does not have particular restriction.Can use any material with printing opacity attribute.Here used high heat-resisting UV epoxy resin (2500Clear that is made by Electrolite Cooperation), the refractive index of this resin is 1.50, viscosity is that 500cps, Shore D are 90, pulling strengrth is that 3000psi, Tg point is that 150 ℃, bulk resistor are 1 * 10 15Ω cm, withstand voltage be 450V/mil.Substrate between fill this filling material 38 and can improve overall transmission.
At last, use known method FPC 46 to be pasted terminal electrode 41 (Fig. 2 D) by anisotropic conducting film 45.
According to aforementioned process, can make the active matrix light-emitting device.
Figure 10 shows the vertical view of an example of EL display panel structure.Figure 10 shows the structure of light emitting display panel, and this panel control treats to be input to by external drive circuit the signal of sweep trace and signal wire.Form pixel portion 701 (it is positioned on the substrate 700 with insulating surface, comprises the pixel 702 that is arranged in matrix structure), scan line side input end 703 and signal line side input end 704.Can set the number of pixel according to all size, 1024 * 768 * 3 of XGA (RGB) for example, 1600 * 1200 * 3 (RGB) of UXGA, or corresponding to 1920 * 1080 * 3 (RGB) under the full situation clearly with a high standard.
Intersect by making, pixel 702 is arranged in matrix configuration from scan line side input end 703 sweep trace that extends and the signal wire that extends from signal line side input end 704.The pixel electrode that each pixel 702 is provided with on-off element and is connected to this on-off element.The typical case of on-off element is thin film transistor (TFT) (TFT).Gate electrode side by sweep trace being connected to TFT also is connected to signal wire with source electrode or drain electrode, can be by controlling each pixel independently from the signal of outside input.
Use transparent material to form first electrode and when using metal material to form second electrode, form the luminous structure of substrate 10, i.e. the bottom-emission type of passing.Perhaps, use metal material to form first electrode and when using transparent material to form second electrode, form and pass the luminous structure of hermetic sealing substrate 35, i.e. top emission type.In addition, perhaps, when using transparent material to form first electrode and second electrode, can form and pass substrate 10 and hermetic sealing substrate 35 the two luminous structure.The present invention can suitably adopt any aforementioned structure.
As previously mentioned, in the present embodiment,, can form precise and tiny figure by using conductive film graph exposure that the droplet method for releasing forms in laser and develop.Use the droplet method for releasing on substrate, directly to form various figures, even the use length of side during greater than the 5th generation of 1000mm or glass substrate thereafter, also can easily be made the EL display panel.
Present embodiment has been explained and has not been carried out spin coated and do not use photomask to carry out the technology of exposure process as far as possible.Yet, the invention is not restricted to this, it is graphical to carry out a part by the exposure process that uses photomask.
Embodiment 2
Embodiment 1 has explained the example by laser beam drawing apparatus exposure grid wiring.Here with reference to figure 5 example of using the laser beam drawing apparatus to form the process of source wiring or grid wiring is described.
Process is slightly variant shown in this process and the embodiment 1, and therefore for simplicity, identical process portion no longer is further explained.
All similar till the graphical process of carrying out semiconductive thin film with embodiment 1.Then, discharge formation conductive film figure 220 (Fig. 5 A) by droplet.In this conductive film figure 220, mixed the positive photosensitive material.
Then, use device shown in Figure 4 that this conductive film figure 220 optionally is exposed to laser (Fig. 5 B).Chemical reaction takes place in the part 221 by laser emission.
Remove by the part 221 of laser emission by development, thereby form source wiring or drain electrode wiring 222,223 (Fig. 5 C).
Because the spacing between source wiring and drain electrode wiring 222 or 223 is determined that by laser emission operating personnel can freely be provided with this spacing.The spacing that freely is provided with between source wiring and drain electrode wiring 222 or 223 is useful, because the length (L) of this spacing decision channel formation region.
With this source wiring or drain electrode wiring 222,223 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Fig. 5 D.Under this state, finished channel-etch TFT, it comprises channel formation region 224, source region 226 and drain region 225 as active layer.Process subsequently is identical with process described in the embodiment 1, does not explain these processes in addition.
Use droplet to discharge under the situation that forms source wiring or drain electrode wiring, consider drippage leeway etc., source wiring and drain electrode wiring should have certain spacing.Therefore be difficult to reduce the length (L) of channel formation region.Described in present embodiment, for example, the length (L) of channel formation region can be decreased to 10 μ m or shorter.
Present embodiment can be freely combined with embodiment 1.
Embodiment 3
Fig. 6 A to 6D shows the example of other process.In Fig. 6 A to 6D, described and used the example of planarization film as gate insulating film 260.Other parts are identical with parts shown in the embodiment 2.
After forming gate electrode, by sputter, the film that obtains by chemical vapor deposition is carried out planarization or coating method forms the gate insulating film 260 with plane surface.This planarization is representative with the chemical mechanical polish process.
When making the luminous display unit of giant-screen, preferably, having low-resistance grid wiring and form and have big thickness, for example is 1 to 5 μ m.When increasing sectional area by increase wiring thickness, produced the level error between substrate surface and the thick film wiring surface, this can cause the degeneration of coverage.Under the situation that increases grid wiring thickness, planar gate dielectric film 260 is useful.
Usually, the substrate surface that is provided with metal line has the protrusion that the increase by metal line thickness forms.In the present embodiment, the substrate surface that is provided with planar gate dielectric film 260 is the plane.Therefore, even the thickness of semiconductive thin film reduces, the deterioration of coverage etc. can appear hardly also.
Similar with embodiment 1, form semiconductive thin film and n N-type semiconductor N film successively.Then, provide mask with this semiconductive thin film of etching optionally and this n N-type semiconductor N film.Therefore, can obtain the semiconductive thin film and the n N-type semiconductor N film of island.
Similar with embodiment 2, discharge formation conductive film figure 250 (Fig. 6 A) by droplet.
Then, use device shown in Figure 4 that conductive film figure 250 optionally is exposed to laser (Fig. 6 B).
Remove by the part 251 of laser emission by development, thereby form source wiring and drain electrode wiring 252,253 (Fig. 6 C).
With source wiring and drain electrode wiring 252,253 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Fig. 6 D.Under this state, finished channel-etch TFT, it comprises channel formation region 254, source region 256 and drain region 255 as active layer.Process subsequently is identical with process described in the embodiment 1, does not explain these processes in addition.
Present embodiment can freely make up with embodiment 1 or 2.
Embodiment 4
It is mask and the process that forms source wiring and drain electrode wiring with self-aligned manner by the exposure back side that Fig. 7 A to 7D shows with the gate electrode.
On substrate, form underlying insulation film 301.As underlying insulation film 301, can use the underlying insulation film that forms by insulation film such as silicon oxide film, silicon nitride film or silicon oxynitride film.If do not need, can not form this underlying insulation film.
To form thickness be 100 to 600nm conducting film by sputtering on the underlying insulation film 301.This conducting film can be formed by the element of selecting from the group that comprises Ta, W, Ti, Mo, Al and Cu, serves as reasons to comprise aforementioned elements for the alloy material of its principal ingredient or the individual layer that compound-material is made, and perhaps be the lamination that forms by aforementioned individual layer.Perhaps, be that the semiconductive thin film of representative can be used as this conducting film with the polysilicon membrane such as the impurity element of phosphorus of having mixed.
Then, use photomask to form Etching mask, and come this Etching mask of etching by dry etching or wet etching.By this this conducting film of etch processes etching, thus the gate electrode 302 of acquisition shown in Fig. 7 A.
Similar with embodiment 1, form gate insulating film, semiconductive thin film and n N-type semiconductor N film successively by plasma CVD or sputter.Then, provide mask with this semiconductive thin film of etching optionally and this n N-type semiconductor N film.Therefore, obtain the semiconductive thin film of island and the n N-type semiconductor N film of island.
Side 2 is similar with implementing, and discharges by droplet to form conductive pattern 320 (Fig. 7 A).Mixed the minus photochromics in the conductive pattern 320.
Then, use the laser beam drawing apparatus in self aligned mode with the back-exposure of conductive pattern 320 in laser (Fig. 7 B).In the conductive pattern by the part generation chemical reaction of laser emission.Use the substrate of printing opacity.Select wavelength can pass the laser of this substrate.Can with Laser emission under the situation of semiconductive thin film or n N-type semiconductor N film, can carry out laser annealing according to optical maser wavelength.
Then carry out and develop, do not formed source wiring or drain electrode wiring 322,323 (Fig. 7 C) by the part of laser emission thereby remove.
By the width decision source wiring of gate electrode and the spacing between drain electrode wiring 322 or 323.
With source wiring or drain electrode wiring 322,323 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Fig. 7 D.Under this state, finished channel-etch TFT, it has channel formation region 324, source region 326 and drain region 325 as active layer.Process subsequently is identical with process described in the embodiment 1, does not explain these processes in addition.
Owing to form the channel formation region of TFT according to the present invention in self aligned mode, can not produce the variation that graphical difference also can reduce TFT.According to the present invention, can simplify manufacture process.
Present embodiment can freely make up with embodiment 1,2 and 3.
Embodiment 5
Explain in the present embodiment and have the manufacture method that stops the active matrix light emitting display device of TFT as the raceway groove of on-off element.
As shown in Figure 8, identical with embodiment 1, on substrate 810, form basement membrane 811.On the whole surface of substrate, form catalysis material TiO 2As basement membrane 811.
Then, to desired region (that is TiO of the edge in the zone that is provided with wiring in the present embodiment, 2) emission can cause the light of the wavelength of photocatalysis, and formation is by the zone of radiation.Can use laser as light with the wavelength that causes photocatalysis.Use device shown in Figure 4, optionally light is transmitted into desired region.Therefore, the zone of this raying becomes and has de-oiling.
Form in the solvent a little by conductor is mixed into, by ink ejecting method with this point drip to not by radiation areas or from this not by radiation area this point that drips, form conducting film as gate electrode 815.Form terminal electrode 840 simultaneously in the terminal part.
Then, form gate insulating film 818 to cover this gate electrode.Afterwards, form semiconductive thin film by plasma CVD.Then, for example form dielectric film, and make it have anticipated shape at graphical this dielectric film of expected areas by plasma CVD in order to form channel protection film 827.In this example, can be that mask is with substrate back exposure formation channel protection film 827 with the gate electrode.In addition, can form this channel protection film by dropwise discharging polyimide, polyvinyl alcohol (PVA) etc.Therefore need not exposure process.
Afterwards, have a kind of semiconductive thin film of conduction type, for example n N-type semiconductor N film by preparations such as plasma CVDs.
Then, on this n N-type semiconductor N film, form the mask of making by polyimide by ink-jet.The semiconductive thin film 825,826 that uses this mask graph semiconductive thin film 824 and have n type electrical conductance.Afterwards, remove this mask by cleaning.
Form wiring 823,822.Can form wiring 823,822 by ink ejecting method.Wiring 823,822 is as so-called source wiring or drain electrode wiring.
Form interlayer dielectric 828.In this interlayer dielectric, form the contact hole that arrives wiring 822.Form electrode 830 at this contact hole.
Formation is electrically connected to the electrode 829 of wiring 822 via electroplax 830.Simultaneously, form electrode 841 in the terminal part.Can form electrode 829,841 by ink ejecting method.Electrode 829 is as the male or female of light-emitting component in the luminous display unit.As electrode 829, can use the point that conductor is mixed in the water type solvent and forms.Especially, by using transparent conductor can form transparent conductive film.
In this stage, finished the TFT substrate that raceway groove stops the luminescent panel of the TFT and first electrode of being provided with as shown in Figure 8.Subsequent process is identical with embodiment 1 described process, therefore is further explained for simplicity and not.
In the present embodiment, as described in embodiment 1, the conductive material solution of the photochromics of waiting to be exposed to laser be can also comprise, the wiring or the electrode that obtain by ink ejecting method formed by release.In addition, can also form Etching mask by being exposed to laser.
Present embodiment can be freely with embodiment 1 to 4 in any one is combined.
Embodiment 6
In the present embodiment, explain the manufacture method of active matrix light emitting display device, this display device has the staggered TFT of the preface of making by droplet release as on-off element.
Form basement membrane 911, be used to improve substrate 910 and will discharge adhesiveness between the material layer of formation by droplet.
On basement membrane 911, discharge formation source wiring layer 923 and drain electrode wiring layer 924 by droplet.
Form terminal electrode 940 in the terminal part.Conductive material as forming aforementioned layers can use the compound of making for its principal ingredient by such as the metallic particles of Ag (silver), Au (gold), Cu (copper), W (tungsten) or Al (aluminium).Owing to preferably reduce the resistance of source wiring layer and drain electrode wiring layer, therefore preferred use dissolving or be distributed to gold, silver in the solvent and copper in any one as material.More preferably, use has low-resistance silver or copper.Solvent can use ester such as butyl acetate, such as the alcohol of isopropyl alcohol and such as the organic solvent of acetone.Concentration by adjusting solvent or add surfactant etc., suitably control surface tension force and viscosity.
On whole surface, form after the n type semiconductor layer, remove n type semiconductor layer between source wiring layer 923 and the drain electrode wiring layer 924 by etching.
On whole surface, form semiconductive thin film.Use with silane or the germane semiconductor material gas as representative, the amorphous semiconductor films or half amorphous semiconductor films that form by vapor phase growth or sputter form this semiconductive thin film.
Discharge the formation mask by droplet.Then, graphically this semiconductive thin film and this n type semiconductor layer are to form semiconductor layer 927 and n type semiconductor layer 925,926, as shown in Figure 9.Semiconductor layer 927 forms on source wiring layer 923 and drain electrode wiring layer 924 and extends.This n type semiconductor layer 925,926 is inserted between source wiring layer 923 and drain electrode wiring layer 924 and the semiconductor layer 927.
Then, form gate insulating film by plasma CVD or sputter by individual layer or lamination.Especially, preferably gate insulating film forms by piling up three laminations, that is, and and the insulation course that forms by silicon nitride, the insulation course that forms by monox and the insulation course that forms by silicon nitride.
Discharge the formation mask with graphical gate insulation layer 918 by droplet.
Discharge formation grid wiring 915 by droplet.As the conductive material that forms grid wiring 915, can use to comprise metallic particles (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) and be the compound of its principal ingredient.Thereby grid wiring 915 extends to the terminal electrode 940 that the terminal part is connected to the respective terminal part.
Then, form plane interlayer dielectric 928 by coating (but not getting rid of other method).Can use the inorganic insulating membrane that forms by vapor phase growth or sputter to form this interlayer dielectric such as silicon oxide film.Perhaps, can use plasma CVD or sputter to form silicon nitride film with as diaphragm, and can form the plane dielectric film by coating.
In this interlayer dielectric, form the contact hole that arrives wiring 924.Form electrode 930 at this contact hole.
Formation is electrically connected to the electrode 929 of wiring 924 via electrode 930.Simultaneously, form electrode 941 in the terminal part.Can form electrode 929,941 by ink ejecting method.Electrode 929 is as the male or female of light-emitting component in the luminous display unit.As electrode 929, can use the point that conductor is mixed in the water type solvent and forms.Especially, by using transparent conductor can form transparent conductive film.
In this stage, finished the TFT substrate of the luminescent panel that is provided with the top gate TFT (staggered TFT) and first electrode as shown in Figure 9.Subsequent process is identical with embodiment 1 described process, therefore does further explanation for the sake of simplicity and not.
In the present embodiment, shown in embodiment 1, the conductive material solution of the photochromics of waiting to be exposed to laser be can also comprise, the wiring or the electrode that obtain by ink ejecting method formed by release.In addition, can also form Etching mask by being exposed to laser.
Present embodiment can be freely with embodiment 1 to 4 in any one combination.
Embodiment 7
Figure 17 A to 18D shows the example of the manufacture method of active matrix liquid crystal display apparatus, and this active matrix liquid crystal display apparatus has the channel-etch TFT as on-off element.
Similar with embodiment 1, on substrate 2010, form basalis 2011, be used to improve substrate 2010 and will discharge adhesiveness between the material layer of formation by droplet.
Except non-alkali glass substrate by fusion technology or floating manufactured, for example barium borosilicate glass, alumina borosilicate glass or aluminosilicate glass, substrate 2010 can also use has the plastic base that can resist the treatment temperature in this manufacture process etc.When making reflection LCD device, can use semiconductor substrate such as monocrystalline silicon, such as stainless metal substrate or on ceramic base plate surface, provide insulation course and the substrate that forms.
Similar with embodiment 1, adopt and think that ink-jet is the droplet method for releasing of representative, uses device shown in Figure 16 dropwise to discharge conductive material solution and form conductive film figure 2012 (Figure 17 A).
Then, similar with embodiment 1, optionally with this conductive film figure 2012 of laser emission, thereby the part of conductive film figure 2012 is exposed to laser (Figure 17 B) by device shown in Figure 4.
Use etchant (perhaps developing solution) this conductive film figure 2012 that develops, thereby prune excessive part.Then, execution is cured processing to form the metal line 2015 (Figure 17 C) as gate electrode or grid wiring.
Except metal line 2015, also form the wiring 2040 that extends to the terminal part.Although not shown, if desired, can be formed for forming the electrode for capacitors or the capacitor wiring of retention volume.
When using the positive photosensitive material, the part that use laser emission is wished to be removed is with initiating chamical reaction.The part of chemical reaction can take place by the etchant dissolving.
Perhaps, can dropwise discharge, under the room temperature after oven dry and the prebake conductive material solution, carry out the exposure of adopting laser emission.
Use plasma CVD or sputter to deposit gate insulating film 2018, semiconductive thin film and n N-type semiconductor N film successively.
As gate insulating film 2018, can use by what plasma CVD obtained to comprise monox, silicon nitride or silicon oxynitride material as its principal ingredient.Perhaps, gate insulating film 2018 can be the silicon oxide film that comprises hydrocarbyl group, and it discharges and cure by the oxosilane based polyalcohol by droplet and forms.
Form this semiconductive thin film by method of vapor-phase growing, sputtering method or hot CVD method by amorphous semiconductor films or half amorphous semiconductor films, above-mentioned every kind of method is all used with silane or the germane semiconductor material gas as representative.
Can form this n N-type semiconductor N film by the amorphous semiconductor films or half amorphous semiconductor films that form by the plasma CVD that uses silane gas and hydrogen phosphide.Although this n N-type semiconductor N film 2020 can reduce semiconductive thin film and the electrode that in subsequent process, forms between contact resistance, can form this n N-type semiconductor N film 2020 as required.
Then, provide mask 2021, and obtain the semiconductive thin film 2019 and the n N-type semiconductor N film 2020 (Figure 17 D) of island subsequently by optionally this semiconductive thin film of etching and n N-type semiconductor N film.As the method that forms mask 2021, can adopt droplet to discharge or printing (letterpress, lithography, intaglio printing, serigraphy etc.).
After removing mask 2021, discharge the compound that comprises conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) by droplet release selectivity and form source wiring, drain electrode wiring 2022,2023.Similarly, form (unshowned) connecting wiring (Figure 17 E) in the terminal part.
With source wiring, drain electrode wiring 2022,2023 is the top layer part of this n N-type semiconductor N film of mask etching and this semiconductive thin film, obtains the state shown in Figure 18 A.Finished channel-etch TFT this moment, and this TFT has channel formation region 2024, source region 2026 and the drain region 2025 as active layer.
Form diaphragm 2027 and be subjected to contaminating impurity (Figure 18 B) to prevent channel formation region 2024.As the material of diaphragm 2027, can use by what sputter or plasma CVD formed to comprise silicon nitride or silicon oxynitride material as its principal ingredient.In this example, described and used the example of diaphragm, yet always do not needed to provide this diaphragm.
Then, by droplet release optionally formation interlayer dielectric 2028.As the material of interlayer dielectric 2028, can adopt the resin material such as epoxy resin, acryl resin, phenolics, novolac resin, third rare resin, melamine resin or urethane resin.The method that forms interlayer dielectric 2028 is not limited to droplet and discharges.Can use coating, plasma CVD etc. on whole surface, to form interlayer dielectric 2028 in addition.
Then, be this diaphragm of mask etching with interlayer dielectric 2028, thereby on source wiring or drain electrode wiring 2022,2023, form the bossing (pillar) 2029 that forms by conducting element.Can lead to and repeat to discharge and cure the compound that comprises conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) and pile up this bossing (pillar) 2029.After this diaphragm of etching, be that mask carries out etch processes in the terminal part with this interlayer dielectric, thereby optionally remove gate insulating film.
Then, on interlayer dielectric 2028, form first pixel electrode 2030 (Figure 18 C) that contacts with this bossing (pillar) 2029.Similarly, form and wiring 2040 terminal electrodes that contact 2041.Under the situation of making the transparent liquid crystal display panel, can form and cure by compound tin indium oxide (ITO), the tin indium oxide (ITSO) that comprises monox, zinc paste (ZnO), tin oxide (SnO 2) wait the predetermined pattern of making, to form pixel electrode 2030 and terminal electrode 2041.
When making reflective liquid crystal display panels, can discharge the metallic particles that comprises such as Ag (silver), Au (gold), Cu (copper), W (tungsten) or Al (aluminium) by droplet is the compound of its principal ingredient, forms pixel electrode 2030 and terminal electrode 2041.Perhaps, can form transparent conductive film and reflective conductive film by sputter; Discharge the formation mask graph by droplet; And the execution etch processes, and form this pixel electrode.
Figure 19 shows the example that is in the vertical view of the pixel of state shown in Figure 18 C.In Figure 19, the cross section that A-B along the line is intercepted is corresponding to the cross sectional view shown in Figure 18 C.Among Figure 19, use the numeral components identical identical with Figure 18 C.
According to aforementioned process, on substrate 2010, finished the TFT substrate that is used for display panels, this display panels is provided with bottom gate TFT (reverse interleaved TFT) and pixel electrode.
Then, form orientation film 2034a to cover pixel electrode 2030.Can form this orientation film 2034a by droplet release, serigraphy or hectographic printing.After this carry out friction treatment to orientation film 2034a surface.
The color filter that comprises dyed layer 2036a, light shield layer (black matrix) 2036b and overcoat (overcoat layer) 2037 is provided on counter substrate 2035; The opposite electrode 2038 that formation is formed by transparency electrode; And form orientation film 2034b thereon.The sealant (not shown) of making the formation closed figures is with the zone that surrounds and pixel portion overlaps.Although the example of the drafting sealant of formation closed figure as described herein is dropwise to discharge liquid crystal 2039, can be chosen in and pastes after the TFT substrate by dipping (on gush) by means of capillarity injection liquid crystal.Also can discharge and form color filter by droplet.
Then, dropping liquid crystal under reduced pressure enters to prevent bubble so that two substrates are pasted each other.One or many splashes into liquid crystal in this closed hoop figure.For the alignment mode of this liquid crystal, adopt the TN pattern usually, that is, and the orientation of liquid crystal molecule with become from incident light to the outgoing direction of light 90 the degree.When making the TN mode LCD, substrate is pasted mutually, made that the frictional direction of each substrate is vertical mutually.
By the dispersing ball spacer, form the column spacer that is formed from a resin, perhaps filling material is mixed in the sealant, substrate is separated.Aforementioned column spacer is to comprise organic resin material at least a in acrylic acid, polyimide, polyimide amide or the epoxy resin, the material of from the group that comprises monox, silicon nitride and silicon oxynitride, selecting, or the inorganic material that forms by the laminate film that previous materials is made.
Then trim substrate does not need part.When forming a plurality of panel, substrate is divided into each panel by a substrate.When forming a panel, paste on this substrate, can omit this pruning process by the counter substrate that will cut apart in advance by a substrate.
Use known method FPC 2046 to be pasted panel by anisotropic conductive layer 2045.Finished Liquid Crystal Module (Figure 18 D) according to aforementioned process.In addition, if desired, then paste optical thin film.When making the transparent liquid crystal display device, on active-matrix substrate and counter substrate, all paste polaroid.
As previously mentioned, in the present embodiment, the conductive film graph exposure that uses droplet to discharge to form in laser and develop, can be realized precise and tiny figure.Use droplet to discharge and directly on substrate, form various figures,, also can easily make display panels even use the length of side greater than the 5th generation of 1000mm or glass substrate thereafter.
Present embodiment has been explained and has not been carried out spin coated and do not use photomask to carry out the technology of exposure process as far as possible.Yet, the invention is not restricted to this, it is graphical to carry out a part by the exposure process that uses photomask.
Present embodiment can freely make up with embodiment 1.
Embodiment 8
Embodiment 7 has explained the example by laser beam drawing apparatus exposure grid wiring.In the present embodiment, with reference to figure 20A to 20D the example of using the laser beam drawing apparatus to form the process of source wiring or grid wiring is described.
Process is slightly variant shown in this process and the embodiment 7, therefore for simplicity, does not further explain the same section of this process.
All similar till the graphical process of carrying out semiconductive thin film with embodiment 7.Then, discharge formation conductive film figure 2120 (Figure 20 A) by droplet.In this conductive film figure 2120, mixed the positive photosensitive material.
Then, use device shown in Figure 4 that this conductive film figure 2120 is exposed to laser (Figure 20 B).Chemical reaction takes place in the part 2121 by laser emission.
Remove by the part 2121 of laser emission by development, thereby form source wiring and drain electrode wiring 2122 or 2123 (Figure 20 C).
Because the interval between source wiring and drain electrode wiring 2122 or 2123 determines that by laser emission operating personnel can freely be provided with this interval.Freely being provided with between source wiring and drain electrode wiring 2122 or 2123 is useful at interval, because the length of this interval determination channel formation region (L).
With this source wiring and drain electrode wiring 2122 or 2123 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Figure 20 D.Under this state, finished channel-etch TFT, it comprises channel formation region 2124 (as active layer), source region 2126 and drain region 2125.Process subsequently is identical with process described in the embodiment 7, does not explain these processes in addition.
Use droplet to discharge when forming source wiring or drain electrode wiring, consider drippage leeway etc., source wiring and drain electrode wiring should have certain interval.Therefore be difficult to reduce the length (L) of channel formation region.When described in present embodiment, using laser, for example the length (L) of channel formation region can be decreased to 10 μ m or shorter.
Present embodiment can freely make up with embodiment 1 and 7.
Embodiment 9
Figure 21 A to 21D shows the example of other process.In Figure 21 A to 21D, described and used the example of planarization film as gate insulating film 2160.Other parts are identical with parts shown in the embodiment 8.
After forming gate electrode, by sputter, the film that is obtained by chemical vapor deposition is carried out planarization or coating method forms the gate insulating film 2160 with plane surface.This planarization is representative with the chemical mechanical polish process.
When making the liquid crystal indicator of giant-screen, having low-resistance grid wiring and be preferably formed to having thick thickness, for example is 1 to 5 μ m.When increasing sectional area by increasing wiring thickness, produced the level error between substrate surface and the thick film wiring surface, this can cause the degeneration of coverage.Planar gate dielectric film 2160 is useful under the situation that increases grid wiring thickness.
Usually, the substrate surface that is provided with metal line has by increasing the protrusion that metal line thickness forms.In the present embodiment, the substrate surface that is provided with planar gate dielectric film 2160 is the plane.Therefore, even the thickness of semiconductive thin film reduces, the deterioration of coverage etc. can appear hardly also.
Similar with embodiment 1, form semiconductive thin film and n N-type semiconductor N film successively.Then, provide mask with this semiconductive thin film of etching optionally and this n N-type semiconductor N film.Therefore, can obtain the semiconductive thin film and the n N-type semiconductor N film of island.
Similar with embodiment 8, discharge formation conductive film figure 2150 (Figure 21 A) by droplet.
Then, use device shown in Figure 4 that conductive film figure 2150 optionally is exposed to laser (Figure 21 B).
Remove by the part 2151 of laser emission by development, thereby form source wiring or drain electrode wiring 2152,253 (Figure 21 C).
With source wiring and drain electrode wiring 2152 or 2153 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Figure 21 D.Under this state, finished channel-etch TFT, it has channel formation region 2154 (as active layer), source region 2156 and drain region 2155.Process subsequently is identical with process described in the embodiment 7, does not explain these processes in addition.
Present embodiment can be freely combined with embodiment 1,7 or 8.
Embodiment 10
It is mask and the process that forms source wiring and drain electrode wiring with self-aligned manner by the exposure back side that Figure 22 A to 22D shows with the gate electrode.
On substrate, form underlying insulation film 2201.As this underlying insulation film 2201, can use the underlying insulation film that forms by insulation film such as silicon oxide film, silicon nitride film or silicon oxynitride film.If do not need, can not form this underlying insulation film.
To form thickness be 100 to 600nm conducting film by sputtering on the underlying insulation film 2201.This conducting film can be made by the element of selecting from the group that comprises Ta, W, Ti, Mo, Al and Cu, serves as reasons to comprise the individual layer that alloy material that aforementioned elements is a principal ingredient or compound-material are made, and perhaps be the lamination that forms by aforementioned individual layer.Perhaps, be that the semiconductive thin film of representative can be used as this conducting film with the polysilicon membrane such as the impurity element of phosphorus of having mixed.
Then, use photomask to form Etching mask, and by dry etching or this Etching mask of wet etch etches.By this this conducting film of etch processes etching, thus the gate electrode 2202 of acquisition shown in Figure 22 A.
Similar with embodiment 7, form gate insulating film, semiconductive thin film and n N-type semiconductor N film successively by plasma CVD or sputter.Then, provide mask with this semiconductive thin film of etching optionally and this n N-type semiconductor N film.Therefore, can obtain the semiconductive thin film of island and the n N-type semiconductor N film of island.
Similar with embodiment 8, discharge formation conductive pattern 2220 (Figure 22 A) by droplet.Mixed the minus photochromics in the conductive pattern 2220.
Then, use the laser beam drawing apparatus in self aligned mode with the back-exposure of conductive pattern 2220 in laser (Figure 22 B).In the conductive pattern by the part generation chemical reaction of laser emission.Use the substrate of printing opacity.Select wavelength can pass the laser of this substrate.
Then develop, do not formed source wiring and drain electrode wiring 2222 or 2223 (Figure 22 C) by the part of laser emission thereby remove.
By the width decision source wiring of gate electrode and the interval between drain electrode wiring 2222 or 2223.
With source wiring and drain electrode wiring 2222,2223 is mask, and the top layer part by etching n N-type semiconductor N film and semiconductive thin film obtains state shown in Figure 22 D.Under this state, finished channel-etch TFT, it has channel formation region 2224 (as active layer), source region 2226 and drain region 2225.Process subsequently is identical with process described in the embodiment 7, does not explain these processes in addition.
Owing to form the channel formation region of TFT according to the present invention in self aligned mode, can not produce the variation that graphical difference also can reduce TFT.According to the present invention, can simplify manufacture process.
Present embodiment can freely make up with embodiment 1,7,8 or 9.
Embodiment 11
Explain in the present embodiment and have the manufacture method that stops the active matrix light emitting display device of TFT as the raceway groove of on-off element.
As shown in figure 23, identical with embodiment 7, on substrate 2310, form basement membrane 2311.On the whole surface of substrate, form catalysis material TiO 2As basement membrane 2311.
Then, desired region (that is, is provided with the TiO of edge in the zone of wiring in the present embodiment 2) emission wavelength can cause the light of photocatalysis, forms the raying district.Can use laser as light with the wavelength that can cause photocatalysis.Use device shown in Figure 4, optionally light is transmitted into desired region.Therefore, area of irradiation becomes and has de-oiling.
Form in the solvent a little by conductor is mixed into, by ink ejecting method with this point drip to not by radiation areas or from this not by radiation area this point that drips, form conducting film thus as gate electrode 2315.Form terminal electrode 2340 simultaneously in the terminal part.
Then, form gate insulating film 2318 to cover this gate electrode.Afterwards, form semiconductive thin film by plasma CVD.Then, for example form dielectric film, and make it have anticipated shape at graphical this dielectric film of desired region by plasma CVD in order to form channel protection film 2327.In this example, can as mask the substrate back exposure be formed this channel protection film 2327 with gate electrode.In addition, can adopt ink ejecting method to form this channel protection film by discharging polyimide, polyvinyl alcohol (PVA) etc.Therefore need not exposure process.
Afterwards, have a kind of semiconductive thin film of conduction type, for example n N-type semiconductor N film by formation such as plasma CVDs.
Then, on this n N-type semiconductor N film, form the mask of making by polyimide by ink-jet.The semiconductive thin film 2325,2326 that uses this mask graph semiconductive thin film 2324 and have n type electrical conductance.Afterwards, remove this mask by cleaning.
Form wiring 2323,2322.Can form wiring 2323,2322 by ink ejecting method.Wiring 2323,2322 is as so-called source wiring or drain electrode wiring.
Form interlayer dielectric 2328.Form the contact hole that arrives wiring 2322.Form electrode 2330 at this contact hole.
Formation is electrically connected to the electrode 2329 of wiring 2322 via electrode 2330.Simultaneously, form electrode 2341 in the terminal part.Form electrode 2329,2341 by ink ejecting method.Electrode 2329 is as the pixel electrode in the liquid crystal indicator.Can use the point that conductor is mixed in the water type solvent and forms as electrode 2329.Especially, by using transparent conductor can form transparent conductive film.
In this stage, finished the TFT substrate that raceway groove stops the display panels of TFT and pixel electrode of being provided with as shown in figure 23.Subsequent process is identical with embodiment 7 described processes, does not therefore do further explanation.
In the present embodiment, as described in embodiment 7, also can comprise the conductive material solution of photochromics to be exposed, form wiring or electrode by release.In addition, can also form Etching mask by being exposed to laser.
Present embodiment can be freely with embodiment 1,7 to 11 in any one is combined.
Embodiment 12
In the present embodiment, explain the manufacture method of active matrix liquid crystal display apparatus, this display device has by the staggered TFT in the preface of droplet release manufacturing as on-off element.
Form basement membrane 2411, be used to improve substrate 2410 and will discharge adhesiveness between the material layer of formation by droplet.
On basement membrane 2411, discharge formation source wiring layer 2423 and drain electrode wiring layer 2424 by droplet.
Form terminal electrode 2440 in the terminal part.Conductive material as forming aforementioned each layer can use the compound of making as principal ingredient by such as the metallic particles of Ag (silver), Au (gold), Cu (copper), W (tungsten) or Al (aluminium).Owing to preferably reduce the resistance of source wiring layer and drain electrode wiring layer, therefore consider than resistance value preferably use dissolving or be distributed to gold, silver in the solvent and copper in any one as material.More preferably, use has low-resistance silver or copper.This solvent can use ester such as butyl acetate, such as the alcohol of isopropyl alcohol and such as the organic solvent of acetone.Concentration by adjusting solvent or add surfactant etc., suitably control surface tension force and viscosity.
On whole surface, form after the n type semiconductor layer, remove this n type semiconductor layer between source wiring layer 2423 and the drain electrode wiring layer 2424 by etching.
On whole surface, form semiconductive thin film.Use with silane or germane to the semiconductor material gas of representative, form this semiconductive thin film by amorphous semiconductor films that forms by vapor phase growth or sputter or half amorphous semiconductor films.
Discharge the formation mask by droplet.Then, graphically this semiconductive thin film and this n type semiconductor layer are to form semiconductor layer 2427 and n type semiconductor layer 2425,2426, as shown in figure 24.Semiconductor layer 2427 forms on source wiring layer 2423 and drain electrode wiring layer 2424 and extends.This n type semiconductor layer 2425,2426 is inserted between source wiring layer 2423 and drain electrode wiring layer 2424 and the semiconductor layer 2427.
Then, individual layer or the lamination that is formed by plasma CVD or sputter forms gate insulating film.Especially, preferably this gate insulating film forms by piling up three laminations, that is, and and the insulation course that forms by silicon nitride, the insulation course that forms by monox and the insulation course that forms by silicon nitride.
Discharge the formation mask with graphical gate insulation layer 2418 by droplet.
Discharge formation grid wiring 2415 by droplet.The conductive material that forms grid wiring 2415 can use and comprise the compound of metallic particles (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminium) etc.) as principal ingredient.Thereby grid wiring 2415 extends to the terminal electrode 2440 that the terminal part is connected to the respective terminal part.
Then, form plane interlayer dielectric 2428 by coating (but not getting rid of other method).Can use this interlayer dielectric of inorganic insulation film preparation that forms by vapor phase growth or sputter such as silicon oxide film.Perhaps, can use plasma CVD or sputter to form silicon nitride film, can form the plane dielectric film by coating then with as diaphragm.
In this interlayer dielectric, form the contact hole that arrives drain electrode wiring 2424.Form electrode 2430 at this contact hole.
Formation is electrically connected to the electrode 2429 of drain electrode wiring 2424 via electrode 2430.Simultaneously, form electrode 2441 in the terminal part.Can form electrode 2429,2441 by ink ejecting method.Electrode 2429 is as the pixel electrode of liquid crystal indicator.Can use the point that conductor is mixed in the water type solvent and forms as electrode 2429.Especially, can use transparent conductor to form transparent conductive film.
In this stage, finished the TFT substrate of the display panels that is provided with top grid TFT (staggered TFT) and pixel electrode as shown in figure 24.Subsequent process is identical with embodiment 7 described processes, does not therefore do further explanation.
In the present embodiment, as described in embodiment 7, also can comprise the conductive material solution of photochromics to be exposed, form wiring or electrode by release.In addition, can also form Etching mask by being exposed to laser.
Present embodiment can be freely with embodiment 1,7 to 10 in any one is combined.
To describe the example of the present invention that comprises aforementioned aspect more in detail below.
Example 1
Explain in this example driving circuit is installed to according to the example on the EL display panel of optimal mode manufacturing.
Explain the display device that adopts the COG technology with reference to Figure 11.On substrate 1600, be provided for showing such as the pixel portion 1601 of the information of text or image and the driving circuit 1602 that is positioned at scan-side.The substrate that is provided with a plurality of driving circuits is divided into rectangle.Driving circuit (hereinafter being called drive IC) 1605a, 1605b are installed on the substrate 1600.Figure 11 shows a plurality of drive IC 1605, and shows mounting strap 1604a and the embodiment that is with 1604b on the point of drive IC 1605a and drive IC 1605b.Perhaps, the substrate that is provided with a plurality of driving circuits is divided into and has the size identical with the signal line side length of pixel portion, and band can be installed on the point of single drive IC.
Can use the TAB technology.In this example, thus pasting a plurality of bands makes it to be installed together with drive IC.When using the COG technology, single drive IC can be installed to single band.In this example, consider that from the angle of intensity the sheet metal that is used for fixing drive IC preferably is adhered to this drive IC.
Consider that from the angle of boosting productivity preferably, a plurality of drive IC to these EL display panels to be installed are to form on 300mm to 1000mm or the bigger rectangular substrate in one side length of side.
That is to say that form a plurality of circuitous patterns on substrate, these circuitous patterns have the unit that comprises driving circuit section and input and output terminal respectively, thereby and cut apart these a plurality of circuitous patterns and take out this circuitous pattern from substrate.This drive IC can form has 15 to 80mm long limit, 1 to 6mm minor face, and perhaps its length is corresponding to one side of pixel region, while perhaps its length equals pixel portion and adds each driving circuit.
The advantage of the external dimensions of drive IC is the length of longer sides on the IC chip.The longer sides that need be installed to pixel portion is the number of the number of 15 to 80mm drive IC less than the IC chip, and this can improve fabrication yield.When forming drive IC on glass substrate, throughput rate can't variation, because drive IC can not be subjected to the restriction as the substrate shape of parent substrate.Compare with the IC chip that takes out from circular silicon wafer, this is significant advantage.
In Figure 11, be provided with the drive IC 1605a of driving circuit and the perimeter that 1605b is installed to pixel region 1601.These drive IC 1605a and 1605b are the driving circuit that is positioned at signal line side.In order to form the panchromatic corresponding pixel region with RGB, the XGA class needs 3072 signal wires, and the UXGA class needs 4800 signal wires.The signal wire that comprises these number signal wires is divided into a plurality of forming lead-in wire at the edge of pixel region 1601, and assembles along the pitch of the output terminal of drive IC 1605a and 1605b.
Preferably form this drive IC, and preferably form this crystalline semiconductor by continuous emitted laser radiation by the crystalline semiconductor that is formed on the substrate.Therefore, use continuous solid of launching or gas laser as lasing oscillator.When using continuous emitted laser, use polycrystal semiconductor layer can make transistor with small amount of crystal defective with big crystallite dimension.High-speed driving is possible, because mobility or response speed are gratifying, therefore compare and can improve frequency of operation to a greater degree with traditional devices, and, because characteristic variations is littler, can obtain high reliability.In order further to improve frequency of operation, transistorized orientation is preferably consistent with the direction of scanning of laser.This is because in using the laser crystallization process of continuous emission excimer laser, can obtain high mobility when transistorized orientation and laser scanning direction are parallel to each other (preferably-30 ° to 30 °) substantially.In addition, term used herein " orientation " refers to the direction of streaming current, that is, and and the direction that electric charge moves in the channel formation region.The transistor of Zhi Zaoing has the active layer that comprises polycrystal semiconductor layer in this way, this means almost to form the grain boundary along channel direction.
In order to carry out laser crystallization, laser preferably significantly narrows down, so that the bundle spot width is about 1 to 3mm, promptly equals the width of drive IC than minor face.In addition, in order to guarantee enough and effective energy density, the laser emission district is preferably linear.Term used herein " linear " is not meant proper line, and is meant the have wide aspect ratio rectangle or the prolate ellipse of (for example be not less than 2, be preferably 10 to 10000).Bundle spot width by making laser is identical than the length of minor face with drive IC, can provide throughput rate improved display device manufacturing method.
In the embodiment show in figure 11, integrally form scan line drive circuit, and the drive IC as signal-line driving circuit is installed with pixel portion.Yet, the invention is not restricted to present embodiment, drive IC can be mounted to as scan line drive circuit and signal-line driving circuit.In this example, the specification of the drive IC of sweep trace and signal wire place use can be different.
In pixel region 1601, signal wire and sweep trace intersect mutually with the formation matrix configuration, and provide transistor corresponding to each cross section.According to the present invention,, use TFT with channel part of making by amorphous semiconductor or half amorphous semiconductor as the transistor that provides for pixel region 1601.Form this amorphous semiconductor by plasma CVD, sputter etc.Can use plasma CVD to form this half amorphous semiconductor under 300 ℃ the temperature not being higher than.The advantage of this half amorphous semiconductor is, is the non-alkali glass substrate of 550 * 650mm even use external dimensions, also can obtain to prepare the required thickness of transistor at short notice.This manufacturing technology can be made large screen display device effectively.By using half amorphous semiconductor to form channel formation region, this half amorphous TFT can obtain 2 to 10cm 2The field effect mobility of/Vsec.Therefore, this TFT can be as on-off element or as the element of forming the scan line side driving circuit.Therefore can make the EL display panel of realizing system on the panel.
The prerequisite of the display device shown in Figure 11 is that use TFT is integrally formed in scan line drive circuit on the substrate, wherein uses the semiconductor layer that is formed by half amorphous semiconductor to form described TFT.When use had the TFT of the semiconductor layer of being made by amorphous semiconductor, scan line drive circuit and signal-line driving circuit all were installed to drive IC.
In this example, the specification of the drive IC of using at sweep trace and signal wire place is preferably different.For example, although form the scan line side drive IC transistorized withstand voltagely be necessary for about 30V, frequency of operation is not higher than 100kHz, does not comparatively speaking need high speed operation.Therefore, the transistorized channel length (L) of forming the driver of scan line side preferably is arranged to enough big.On the other hand, although for the transistor of signal line side drive IC, it is enough being about the withstand voltage of 12V, and it needs high speed operation, because the frequency of operation under 3V is about 65MHz.Therefore, preferably set the transistorized channel length form driver etc. by the micron chi.
The method that drive IC is installed is not specifically limited, and can use known COG method, lead connecting method or TAB method.
By forming the thickness drive IC identical with counter substrate thickness, their height becomes much at one, and this can reduce the thickness of display device.Use same material to make each substrate, even can not produce thermal stress when temperature variation occurring in display device, and the characteristic of the circuit that is formed by TFT can damaged yet.In addition, have the driving circuit of length, can reduce to be installed to the number of the drive IC of a pixel region greater than the drive IC of IC chip by installation.
As previously mentioned, can in the EL display panel, driving circuit be installed.
Present embodiment can be freely with embodiment 1 to 6 in any combination.
Example 2
Light-emitting device with thin film transistor (TFT) is described with reference to Figure 12.
Shown in Figure 12 A, provide the top grid n channel TFT of use half amorphous silicon membrane as active layer to driving circuit section 1310 and pixel portion 1311.
In embodiment 6, explain the manufacture method of this top grid TFT, no longer further explained this manufacture method.
In this example, be connected to the n channel TFT that is formed at the light-emitting component in the pixel portion 1311 and be illustrated as drive TFT 1301.Formation is called as the dielectric film 1302 of embankment etc., with the marginal portion of the electrode (being called first electrode) that covers drive TFT 1301.Dielectric film 1302 can be made by following material: inorganic material (monox, silicon nitride, silicon oxynitride etc.), photosensitive or non-photosensitivity organic material (polyimide, acrylic acid, polyamide, polyimide amide, resist or benzocyclobutene), so-called siloxane (a kind of material, it has the skeleton that the key by silicon (Si) and oxygen (O) forms, and comprise hydrogen at least as substituting group, perhaps comprise to be selected from comprise that any one is as substituting group in the group that fluoride, alkyl and aromatic hydrocarbon forms) or the layer structure of previous materials.As organic material, can use positive photosensitive organic resin or minus photosensitive organic resin.
On first electrode, be formed into the opening portion of dielectric film 1302.Provide this opening portion to electroluminescence layer 1303, and second electrode 1304 of formation light-emitting component is to cover this electroluminescence layer 1303 and dielectric film 1302.
This electroluminescence layer exists two kinds of possible molecular excitations, singlet excited and triplet excited states.Because ground state is generally singlet state, the light emission that comes from this singlet state is called fluorescence, and the light emission that comes from triplet is called phosphorescence.The light emission of this electroluminescence layer may be to derive from any excited state.In addition, fluorescence capable of being combined and phosphorescence, and can select fluorescence and phosphorescence by the characteristics of luminescence (brightness, life-span etc.) of each RGB.
On first substrate, pile up HIL (hole injection layer), HTL (hole transport layer), EML (luminescent layer), ETL (electron transport layer), EIL (electron injecting layer) successively, thereby form electroluminescence layer 1303.Except this hierarchy, this electroluminescence layer 1303 can form has single layer structure or mixed structure.
Form electroluminescence layer 1303 when realizing panchromatic demonstration, vapour deposition that can be by using evaporation mask, ink-jet etc. optionally deposition present the material of redness (R), blue (B) and green (G) respectively.
Particularly, HTL uses CuPc or PEDOT, and HTL uses α-NPD, and ETL uses BCP or Alq 3, EIL uses BCP:Li or CaF 2For example, EML can use mixed with R, G, B in the Alq of every kind of corresponding adulterant of glow color 3(use DCM etc. when glowing, use DMQD etc. during green light).The material of electroluminescence layer is not limited to be used for the previous materials of hierarchy.For example, replace to use CuPc or PEDOT, can be by oxide, α-NPD and the rubrene of coevaporation deposition such as molybdena (MoOx:x=2～3), thus provide the hole to inject attribute.As this material, can use the compound substance of organic material (comprising low molecular weight material or high molecular weight material) or organic material and inorganic material.
When formation presents the electroluminescence layer of white light emission,, can realize panchromatic demonstration by color filter or color filter and color conversion layer are provided separately.For example can on second substrate (hermetic sealing substrate) that will be secured at together, provide this color filter or color conversion layer.Can form this color filter or color conversion layer by ink ejecting method.Obviously, form the electroluminescence layer of the glow color that presents non-white light emission, can make monochromatic light-emitting device.Can make can the monochromatic background colour display device that shows.
Need consider work function when selecting the material of first electrode and second electrode 1304.According to the pixel structure, this first electrode and second electrode can be male or female.In this example, because the polarity of drive TFT is the n channel-type, first electrode is preferably as negative electrode, and second electrode is preferably as anode.If the polarity of this drive TFT is the p channel-type, then first electrode is preferably as anode, and second electroplax is preferably as negative electrode.
In this example, because the polarity of drive TFT is the n channel-type, the structure optimization ground of light-emitting device comprises first electrode, EIL (electron injecting layer), ETL (electron transport layer), EML (luminescent layer), HTL (hole transport layer) as negative electrode and second electrode that is used as anode.
As the passivating film that is used to cover second electrode, can make dielectric film by DLC etc. by sputter or CVD.Therefore, can prevent that moisture or oxygen from infiltrating.In addition, use first electrode, second electrode or another electrode to cover the side of display device, can prevent that moisture or oxygen from infiltrating.Then paste hermetic sealing substrate.The formed space of hermetic sealing substrate can be filled nitrogen or is provided with drying agent.Can use resin to fill the space that hermetic sealing substrate forms with light emitting properties or high absorption properties.
In order to improve contrast, can provide polaroid or circular polarizing disk.For example, can on a surface of display surface or two surfaces, provide polaroid or circular polarizing disk.
In having the light-emitting device of aforementioned structure, first electrode and second electrode use the material (ITO or ITSO) with printing opacity attribute.Therefore, from the electroluminescence layer emission, brightness is corresponding to the vision signal from the signal wire input along transmit direction 1305 and 1306 for light.
Figure 12 B shows the topology example that part is different from Figure 12 A.
In the structure of light-emitting device shown in Figure 12 B, provide channel-etch n channel TFT to driving circuit section 1310 and pixel portion 1311.
In embodiment 1, explained the manufacture method of this channel-etch TFT, will no longer further explain this manufacture method in this example.
Identical with the situation of Figure 12 A, be connected to the n channel TFT that is formed at the light-emitting component in the pixel portion 1311 and be illustrated as drive TFT 1301.The structure difference is shown in structure shown in Figure 12 B and Figure 12 A, forms first electrode by the conductive film that has light tight attribute and preferably have a highly reflective attribute, forms second electrode 1304 by the conductive film with printing opacity attribute.Therefore, light emission direction 1305 only is positioned at hermetic sealing substrate one side.
Figure 12 C shows the topology example that part is different from Figure 12 A.
In the structure of light-emitting device shown in Figure 12 C, provide raceway groove to stop the n channel TFT to driving circuit section 1310 and pixel portion 1311.
Explained that in embodiment 5 this raceway groove stops the manufacture method of n channel TFT, will no longer further explain this manufacture method in this example.
Identical with the situation of Figure 12 A, be connected to the n channel TFT that is formed at the light-emitting component in the pixel portion 1311 and be illustrated as drive TFT 1301.The structure difference is shown in structure shown in Figure 12 C and Figure 12 A, forms first electrode by the conductive film with printing opacity attribute, forms second electrode 1304 by the conductive film that has light tight attribute and preferably have a highly reflective attribute.Therefore, light transmit direction 1306 only is positioned at substrate one side.
Explained the structure of the light-emitting device that uses each thin film transistor (TFT).The structure of thin film transistor (TFT) and the structure of light-emitting device can freely make up mutually.
This example can be freely with embodiment 1 to 6 and example 1 in any one combination.
Example 3
Explain the dot structure of EL display panel in this example with reference to equivalent electrical circuit shown in Figure 13.
Pixel shown in Figure 13 A is provided with signal wire 1410, is arranged in the power lead 1411 to 1413 of row and the sweep trace 1414 that is arranged in rows.This pixel comprises switching TFT 1401, drive TFT 1403, Current Control TFT 1404, capacitor element 1402 and light-emitting component 1405.
Dot structure shown in Figure 13 C is identical with dot structure shown in Figure 13 A, and just the gate electrode of TFT 1403 is connected to the power lead 1412 that is arranged in rows.That is to say that Figure 13 A has identical equivalent circuit diagram with the pixel shown in the 13C.Yet, when power lead 1412 being arranged in row (Figure 13 A) and power lead 1412 being arranged in rows (Figure 13 C), form every power lead by the conductive layer of different layers.At this, in Figure 13 A and 13C, all focus on and illustrate the wiring that is connected with the gate electrode of TFT 1403, be that layer by different forms these wirings to illustrate.
Being characterized as of pixel shown in Figure 13 A and the 13C, TFT 1403 and 1404 is one another in series and is connected, the channel length L of TFT 1403 3With channel width W 3And the channel length L of TFT 1404 4With channel width W 4Be set as and satisfy L 3/ W 3: L 4/ W 4=5 to 6000: 1.Satisfy 6000: 1 example, L as length and width 3Can be 500 μ m, W 3Be 3 μ m, L 4Be 3 μ m, W 4Be 100 μ m.
In addition, TFT 1403 works in the current value of saturation region with control inflow light-emitting component 1405, and TFT 1404 works in linear zone with the electric current of control to light-emitting component 1405 supplies.With regard to manufacture process, these two TFT preferably have identical conduction type.TFT 1403 not only can use enhancement mode TFT, can also use depletion type TFT.According to the present invention with aforementioned structure, the V of TFT 1404 GSSlight variation can not influence the current value of light-emitting component 1405.That is to say that the current value of light-emitting component 1405 is determined by the TFT 1403 that works in the saturation region.According to the present invention with aforementioned structure, such display device can be provided, that is, wherein since due to the TFT characteristic variations brightness irregularities improve, and picture quality also improves.
In pixel shown in Figure 13 A to 13D, TFT 1401 controls are to the vision signal input of pixel.In case TFT 1401 conductings and to the pixel incoming video signal, this vision signal just is stored in the capacitor element 1402.Figure 13 A and 13C show the structure with capacitor element 1402, yet, the invention is not restricted to this.When the electric capacity that is used to store vision signal can be covered by gate capacitor etc., need not to provide especially capacitor element 1402.
The structure of light-emitting component 1405 comprises pair of electrodes and is clipped in electroluminescence layer between this electrode pair.In order to apply forward bias, provide electric potential difference at (between anode and negative electrode) between pixel electrode and the opposite electrode.The various materials of use such as organic material or inorganic material form this electroluminescence layer.Luminous being meant that this electroluminescence layer produces, the light emission (phosphorescence) that light emission (fluorescence) that excited molecule produces when singlet excited turns back to ground state and excited molecule produce when triplet excited state turns back to ground state.
Dot structure shown in Figure 13 B is identical with dot structure shown in Figure 13 A, has only provided TFT1406 and sweep trace 1415.Similarly, dot structure shown in Figure 13 D is identical with dot structure shown in Figure 13 C, has only provided TFT 1406 and sweep trace 1415.
The conduction and cut-off of TFT 1406 is provided by the sweep trace that newly provides.In case TFT 1406 conductings are stored in that electric charge in the capacitor element just is released and TFT 1406 ends.That is to say,, can realize forcibly that electric current does not flow through the state of light-emitting component 1405 by TFT 1406 is set.Therefore can improve dutycycle, because structure shown in Figure 13 B and the 13D can be when write cycle time begins or begins light period after a while and need not to wait for signal is write all pixels.
Pixel shown in Figure 13 E is provided with signal wire 1450, be arranged in the power lead 1451 and 1452 and the sweep trace 1453 that is arranged in rows of row.This pixel comprises switching TFT 1441, drive TFT 1443, capacitor element 1442 and light-emitting component 1444.Dot structure shown in Figure 13 F is identical with dot structure shown in Figure 13 E, has only provided TFT 1445 and sweep trace 1454.In addition, by the dutycycle that TFT 1445 can improve the structure of Figure 13 F is set.
This example can be freely with embodiment 1 to 6 and example 1 and 2 in any one combination.
Example 4
Explain display module in this example.As the example of display module, Figure 14 shows the cross sectional view of light emission display module.
Figure 14 A shows the cross sectional view that has by the luminous display module of fixing active-matrix substrate 1201 of sealant 1200 and hermetic sealing substrate 1202.Between active-matrix substrate 1201 and hermetic sealing substrate 1202, provide pixel portion 1203, thereby form the viewing area.
Between hermetic sealing substrate 1202 and pixel portion 1203, form interval 1204.This has filled the inert gas such as nitride gas at interval, perhaps is provided with the resin with printing opacity attribute and high suction attribute, can prevent further that therefore moisture or oxygen from infiltrating.Perhaps, can form resin with printing opacity attribute and high suction attribute.Be transmitted into second substrate even the light that produces from light-emitting component has the resin of printing opacity attribute, still can form display module and do not reduce transmissivity.
In order to improve contrast, can provide polaroid or circular polarizing disk (polaroid, 1/4 λ wave plate and 1/2 λ wave plate) for the pixel portion of this module at least.If, then preferably provide hermetic sealing substrate 1202,1/4 λ wave plate and 1/2 λ wave plate 1205 and polaroid 1206 successively from hermetic sealing substrate 1202 sides identification display.In addition, can on this polaroid, provide anti-reflection film.
If, preferably on active-matrix substrate 1201, provide 1/4 λ wave plate and 1/2 λ wave plate 1205 and polaroid 1206 from hermetic sealing substrate 1202 and active-matrix substrate 1201 these both sides identification displays.
The splicing ear 1208 that is provided for active-matrix substrate 1201 is provided via FPC 1209 circuit board 1210.This FPC or connecting wiring are provided with pixel-driving circuit (IC chip, drive IC etc.) 1211, and circuit board 1210 is equipped with the external circuit 1212 such as control circuit or power circuit.
As shown in Figure 14B, providing chromatograph 1207 between pixel portion 1203 and the polaroid or between this pixel portion and the circular polarizing disk.In this example, can present white luminous light-emitting component and the nonferrous layer that presents RGB is provided respectively, can realize panchromatic demonstration by providing to pixel portion.Perhaps, by the light-emitting component that can present blue-light-emitting being provided and color conversion layer being provided separately, can realize panchromatic demonstration in this pixel portion.In addition, perhaps,, can realize panchromatic demonstration by the light-emitting component that can present redness, green and blue-light-emitting being provided and providing chromatograph.This display module can show the image of high-resolution, and the colour purity of each RGB is good.
Opposite with Figure 14 A, in Figure 14 C, use the diaphragm 1221 that forms by film, resin etc. and do not use counter substrate, seal this active-matrix substrate and light-emitting component.Provide diaphragm 1221 to cover second pixel electrode of pixel portion 1203.The material of second diaphragm can use the organic material such as epoxy resin, polyurethane (urethane resin) or silicones.Can use the droplet method for releasing to drip polymeric material and form this second diaphragm.In this example, use distributor mechanism (dispenser) release epoxy resin and drying and form this second diaphragm.In addition, can on this diaphragm, provide counter substrate.Other structure is identical with structure shown in Figure 14 A.
Do not use counter substrate to seal, can reduce weight, size and the thickness of display device.
In structure, use FPC 1209 that printed base plates 1210 are installed, yet the invention is not restricted to this according to the module of this example.Can use COG (glass top chip) method that pixel-driving circuit 1211 and external circuit 1212 are installed on this substrate.
This example can be freely with embodiment 1 to 6 and example 1 to 3 in any one combination.
Embodiment 5
In this example, explain the drying agent of the display panel of in foregoing example, explaining with reference to Figure 15.
Figure 15 A is the vertical view of display panel.Figure 15 B is the cross sectional view of Figure 28 A of A-B intercepting along the line, and Figure 15 C is the cross sectional view of Figure 15 A of C-D intercepting along the line.
Shown in Figure 15 A, use sealant 1802 sealing active-matrix substrate 1800 and counter substrate 1801.Between first substrate and second substrate, provide pixel region.In this pixel region, provide pixel 1807 in the zone of intersection of source wiring 1805 and grid wiring 1806.Between this pixel region and sealant 1802, provide drying agent 1804.In this pixel region, grid wiring or source wiring are provided, and provide drying agent 1814 at the top.At this, drying agent 1814 is provided on grid wiring, yet drying agent 1814 can be provided on this grid wiring and source wiring.
Drying agent 1804 can use by the chemical absorbing (H that absorbs water 2O) material, for example, such as the alkaline earth oxide of calcium oxide (CaO) or baryta (BaO).Perhaps, can use the material that absorbs water by Physical Absorption, for example zeolite or silica gel.
Drying agent can be contained in the resin with good moisture permeability, is fixed on the substrate with being graininess.As resin, can use acryl resin such as ester acrylate (ester acrylate), ether acrylate (ether acrylate), ester polyurethane acrylate (ester urethane acrylate), ether urethane aromatic ester (ether urethanearylate), butadiene urethane acrylate, special urethane acrylate, epoxy acrylate, amino resins acrylate (amino resin acrylate) or acryl resin acrylate (acrylic resin acrylate) with good moisture permeability.In addition, can use epoxy resin such as bisphenol A-type liquid resin, bisphenol A-type solid resin, bromine epoxy resin, Bisphenol F type resin, bisphenol-A D type resin, phenolics, cresol resin, novolac resin, cycloaliphatic epoxy resin, table diepoxy resin (epi-bis epoxy resin), diglycidyl ester group resin, diglycidyl amido resin, heterocyclic ring epoxy resins or modified epoxy.Can use other material.For example can use inorganic material such as siloxane.
Material with suction attribute can use such compound, that is, and and the compound that the molecular mixing by can absorbing water by chemical absorbing forms in the organic solution to be solidified.
For aforementioned inorganic material, can use moisture permeability to be better than material as the moisture permeability of the material of aforementioned sealant with good moisture permeability.
In above-mentioned light-emitting device according to the present invention, the water that infiltrates light-emitting device from the outside can be absorbed be provided with the zone of light-emitting component in arrival before.Therefore, can prevent to sustain damage because of water for the element (typically being light-emitting component) that pixel provides.
Shown in Figure 15 B, outside display panel, be trapped among between sealant 1802 and the pixel region 1803 drying agent 1804 is provided.Active-matrix substrate or counter substrate are provided with sunk part, are used to provide drying agent 1804.Therefore, display panel can approach the manufactured place.
Shown in Figure 15 C, pixel region 1807 is provided with semiconductor region 1811 (this semiconductor region is a part that is used to drive the semiconductor element of display element), grid wiring 1806, source wiring 1805 and pixel electrode 1812.In the pixel portion of this display panel, for providing drying agent 1814 with the counter substrate that grid wiring 1806 overlaps.Because the width of grid wiring is two to four times of width of source wiring, by providing drying agent 1814 on the grid wiring 1816 for non-display area, aperture efficiency can not reduce and can be inhibited owing to water is penetrated into the degeneration that light-emitting component causes.
This example can be freely with embodiment 1 to 6 and example 1 to 4 in any one combination.
Example 6
In this example, the example of using droplet to discharge the liquid crystal that drips is described.In this example, Figure 25 A to 25D shows the example that obtains the manufacturing panel of four panels from a large substrates 1110.
Cross sectional view when Figure 25 A forms liquid crystal layer for using distributor mechanism (or ink-jet).Discharge, spray or the liquid crystal material 1114 that drips from the nozzle 1118 of liquid crystal releasing means 1116, thereby cover sealed dose 1112 pixel portion 1111 of surrounding.Along the releasing means of direction mobile liquid crystal shown in the arrow 1116 among Figure 25 A.In addition, explained the example of moving nozzle 1118, yet, can fix this nozzle and moving substrate to form liquid crystal layer.
Figure 25 B is a skeleton view.Figure 25 B shows liquid crystal material 1114 and only optionally is released, sprays or drips to 1112 area surrounded of sealant, and move along nozzle scan direction 1113 on drippage surface 1115.
Figure 25 C and 25D are the amplification cross sectional view that is used for illustrating 1119 enclosing region of Figure 25 A dotted line.When liquid crystal material had high viscosity, liquid crystal material was discharged continuously and is adhered to the surface with a kind of form of band.On the other hand, when liquid crystal material has low viscosity, discharge this liquid crystal material off and on, droplet promptly drips shown in Figure 25 D.
In Figure 25 C, the reverse interleaved TFT that reference number 1120 expressions obtain according to embodiment 1, and 1121 remarked pixel electrodes.Pixel portion 1111 comprises the pixel electrode that is arranged in matrix configuration, the on-off element that is connected to this pixel electrode, reverse interleaved TFT (TFT that uses in this example) and retention volume (not shown).
Explain the panel manufacturing process below with reference to Figure 26 A to 26D.
Prepare first substrate 1035, on insulating surface, be provided with pixel portion 1034.First substrate 1035 provides orientation film in advance, carries out friction treatment, dispersing ball spacer or column spacer is provided, and perhaps provides color filter.Then, shown in Figure 26 A, use dispenser device or ink discharge device are at inert gas atmosphere or under reduced pressure, the precalculated position on first substrate 1035 (around the figure of pixel portion 1034) forms sealant 1032.This translucent sealant 1032 uses that to comprise filling material (diameter is 6 to 24 μ m) and viscosity be 40 to 400Pa/s material.In addition, preferably use the sealant that can not be dissolved in the liquid crystal that to be in contact with it.The sealing agent can be used acrylic acid light-cured resin or acrylic acid heat reactive resin.Owing to only need to form simple graph, therefore can form sealant 1032 by printing.
Use the ink ejecting method liquid crystal 1033 (Figure 26 B) that in sealant 1032 area surrounded, drips.Liquid crystal 1033 uses the known liquid crystal materials with the viscosity that can discharge by ink ejecting method.Because can set the viscosity of liquid crystal material by the control temperature, liquid crystal material is fit to adopt ink ejecting method.By ink-jet, can in sealant 1032 area surrounded, keep the liquid crystal 1033 of necessary amount and do not produce waste.
Then, first substrate 1035 that under reduced pressure will be provided with pixel portion 1034 pastes second substrate 1031 that is provided with opposite electrode or orientation film, makes air bubble can not enter between these two substrates (Figure 26 C).In this example, in described stickup, carry out UV radiation or heat treated to solidify sealing agent 1032.Except UV radiation, also can carry out thermal treatment.
Figure 27 A and 27B show the example that can carry out UV radiation or heat treated sticker when pasting or after stickup.
In Figure 27 A and 27B, the reference number 1041 expressions first substrate supporting dielectric, 1042 expressions, the second substrate supporting dielectric, 1044 expression windows, 1048 expression lower surface platforms, 1049 expression light sources.In Figure 27 A and 27B, use the reference number identical to represent components identical with Figure 26.
Lower surface platform 1048 has been installed the well heater that is used for curing sealant.The second substrate supporting dielectric is provided with window 1044 to pass through the ultraviolet light from light source 1049.Although not shown, carry out the aligning of substrate by window 1044.Second substrate 1033 as counter substrate is cut into desired size in advance and is fixed to the second substrate supporting dielectric 1042 by vacuum cup.Figure 27 A shows the state before pasting.
During stickup, the first substrate supporting dielectric and the second substrate supporting dielectric move down, and two substrates 1035 and 1031 are pasted together, then to the emission of adhesive substrate ultraviolet light to be solidified.Figure 27 B shows the state after the stickup.
Then, use cutter sweep to cut first substrate 1035 (Figure 26 D) such as dicing device, disassociation device (breaker device), roll-type cutter sweep etc.Therefore, make four substrates by a substrate.Then, use known technology that FPC is pasted on each panel.
First substrate 1035 and second substrate 1031 can use glass substrate or plastic base.
Figure 28 A shows the vertical view of the Liquid Crystal Module that obtains according to aforementioned process.Figure 28 B shows the example of the vertical view of another Liquid Crystal Module.
In Figure 28 A, reference number 2501 expression active-matrix substrates, 2506 expression counter substrate, 2504 remarked pixel parts, 2507 expression sealants, 2505 expression FPC.In addition, use the droplet method for releasing to discharge liquid crystal, and under reduced pressure use sealant 2507 adhesive substrates 2501 and 2506.
When TFT has the active layer of being made by half amorphous silicon membrane, can make the part of driving circuit, and can make the Liquid Crystal Module shown in Figure 28 B.
Figure 30 is the block diagram that comprises the scan line drive circuit of the n channel TFT of using half amorphous silicon (SAS), and half amorphous silicon can obtain 5 to 50cm thus 2The field effect mobility of/Vsec.
In Figure 30, the square frame shown in the reference number 500 is corresponding to the impulse output circuit in an output stage of sampling pulse.Shift register comprises n impulse output circuit.Reference number 501 expression buffer circuits.Pixel 502 is connected to the tip of buffer circuit.
Figure 31 shows the concrete configuration of impulse output circuit 500, and this impulse output circuit comprises n channel TFT 601 to 613.Consider to use amorphous semiconductor (SAS) the n channel TFT operating characteristic and determine the size of TFT.For example, if channel length is 8 μ m, then channel width can be made as 10 to 80 μ m.
Figure 32 shows the concrete configuration of buffer circuit 501.This buffer circuit also comprises n channel TFT 620 to 635.Consider to use amorphous semiconductor (SAS) the n channel TFT operating characteristic and determine the size of TFT.For example, if channel length is 10 μ m, then channel width can be made as 10 to 1800 μ m.
Driving circuit has been installed IC chip (not shown), wherein can not form this driving circuit by the TFT with active layer that half amorphous silicon membrane forms.
In Figure 28 B, reference number 2511 expression active-matrix substrates, 2516 expression counter substrate, 2512 expression source signal line driving circuits, 2513 expression gate signal line drive circuits, 2514 remarked pixel parts, 2517 expressions, first sealant, and 2515 expression FPC.In addition, use the droplet method for releasing to discharge liquid crystal, and under reduced pressure use first sealant 2517 and the second sealant adhesive substrate 2511 and 2516. Driving circuit section 2512 and 2513 does not need liquid crystal, therefore only provides liquid crystal to pixel portion 2514.Provide second sealant 2518 to reinforce whole front panel.
The Liquid Crystal Module that is obtained is provided with valve 2604 backlight and catoptron, and is covered by lid 2606.Therefore, finished active matrix liquid crystal display apparatus (transparent type), partly shown in the cross section among Figure 29.This outside that is arranged on the viewing area backlight, and can use light guide plate.Fix this lid and Liquid Crystal Module by bonding agent or organic resin in addition.Because this active matrix liquid crystal display apparatus is a transparent type, and polaroid 2603 is adhered to active-matrix substrate and counter substrate.Other optical thin film (anti-reflection film, polarization film etc.) or diaphragm (not shown) can be provided in addition.
In Figure 29; reference number 2600 expression substrates; 2601 remarked pixel electrodes, 2602 expression column spacers, 2607 expression sealants; 2620 expression color filters (wherein nonferrous layer is arranged in corresponding with each pixel with light shield layer); 2625 expression planarization films, 2621 expression counter substrate, 2622 and 2623 expression orientation films; 2624 expression liquid crystal layers, and 2619 expression diaphragms.
This example can be freely with embodiment 1 and embodiment 7 to 12 in any one combination.
Example 7
Here provided the example of using according to the electrical equipment of liquid crystal indicator of the present invention and light-emitting device manufacturing: such as the video camera of video camera or digital camera, goggle-type display (head mounted display), navigational system, audio reproducing apparatus (automobile audio apparatus, combination audio etc.), personal computer, game machine, portable data assistance (mobile computer, cell phone, portable game machine, e-book etc.), the image-reproducing means that comprises recording medium (more particularly, comprise the device that is used to reproduce recording medium and is used for the display of display reproduction image, such as digital multifunctional dish (DVD) etc.) etc.Figure 33 A to 33D shows the various concrete example of these electrical equipment.
Figure 33 A shows the large scale display device with 22 to 50 inches giant-screens, comprises shell 1701, brace table 1702, display part 1703, video input terminal 1705 etc.This display device comprises all display device that are used for display message, for example the receiver of personal computer, TV radio receiver and two-way TV.According to the present invention,, also can realize large scale display device relatively at a low price even use the length of side greater than the 5th generation of 1000mm or glass substrate thereafter.
Figure 33 B shows personal computer, comprises main body 1711, shell 1712, display part 1713, keyboard 1714, external connection port 1715, indication mouse 1716 etc.According to the present invention, can realize personal computer relatively at a low price.
Figure 33 C show comprise recording medium the portable image transcriber (especially, the DVD transcriber), comprise main body 1721, shell 1722, display part A 1723, display part B1724, recording medium (DVD etc.) reading section 1725, operating key 1726, speaker portion 1727 etc.Display part A 1723 main displays image information, and display part B 1724 main videotex information.The image-reproducing means that comprises recording medium comprises home game machine etc.According to the present invention, can realize image-reproducing means relatively at a low price.
Figure 33 D shows the TV with wireless portable display.Shell 1732 has been installed battery and signal receiver, wherein this battery-operated display part 1733 and speaker portion 1737.This battery have can recharge charger 1730.Charger 1730 can send and receive picture signal, and this picture signal is sent to the signal receiver of display.By operating key 1736 control shells 1732.Figure 33 D shown device can be described as the video/audio bidirectional communication apparatus, because signal can send to charger 1730 from shell 1732.In addition, 1730 transmission signals also send the signal that can be sent to other electrical equipment by charger 1730 from shell 1732 to charger by using operating key 1736, and this TV can control the communication of other electrical equipment.Therefore, this device also can be described as general remote-control device.According to the present invention, can realize the portable TV of large scale (22 to 55 inches) by the relatively low technology of cost.
As previously mentioned, light-emitting device that obtains respectively by putting into practice the present invention or the liquid crystal indicator display part that can be used as various electrical equipment.
This example can be freely with embodiment 1 to 12 and example 1 to 6 in any one is combined.
Industrial usability
According to the present invention, in light-emitting device or liquid crystal indicator manufacture process, form conductive pattern The graphical process of shape can shorten and material quantity can reduce. Therefore, can significantly be reduced to This, and irrelevant with substrate size.

Claims (25)

1. the manufacture method of a semiconductor device comprises:
Discharge the conductive material that will comprise photochromics by droplet and be discharged on the insulating surface of substrate, form the first conductive film figure;
Optionally with this first conductive film graph exposure in laser; And
The first conductive film figure that is exposed by development forms the second conductive film figure.
2. according to the manufacturing method for semiconductor device of claim 1, wherein this conductive material that comprises photochromics comprises the material of selecting from the group that comprises Ag, Au, Cu, Ni, Al or Pt and compound thereof.
3. according to the manufacturing method for semiconductor device of claim 1, wherein this photochromics is the minus photochromics.
4. according to the manufacturing method for semiconductor device of claim 1, wherein this photochromics is the positive photosensitive material.
5. manufacturing method for semiconductor device comprises:
Discharge the conductive material that will comprise photochromics by droplet and be discharged on the insulating surface of substrate, form the first conductive film figure;
Optionally with this first conductive film graph exposure in laser;
The first conductive film figure that is exposed by development forms the width second conductive film figure narrower than the first conductive film figure;
Form the gate insulating film that covers this second conductive film figure; And
On this gate insulating film, form semiconductive thin film.
6. according to the manufacturing method for semiconductor device of claim 5, wherein this conductive material that comprises photochromics comprises the material of selecting from the group that comprises Ag, Au, Cu, Ni, Al or Pt and compound thereof.
7. according to the manufacturing method for semiconductor device of claim 5, wherein this photochromics is the minus photochromics.
8. according to the manufacturing method for semiconductor device of claim 5, wherein this photochromics is the positive photosensitive material.
9. manufacturing method for semiconductor device comprises:
On the insulating surface of substrate, form gate electrode;
Form the gate insulating film that covers this gate electrode;
On this gate insulating film, form first semiconductive thin film;
Be discharged on this first semiconductive thin film by the conductive material that will comprise the positive photosensitive material, form the first conductive film figure;
The selected part of this first conductive film figure is exposed to laser;
The first conductive film figure by development is exposed forms source electrode and drain electrode; And
Use source electrode and drain electrode are as this first semiconductive thin film of mask etching.
10. according to the manufacturing method for semiconductor device of claim 9, further be included in the step that forms second semiconductive thin film on this first semiconductive thin film, this second semiconductive thin film comprises the impurity element that n type or p type electric conductivity are provided.
11., further comprise use source electrode and drain electrode step as this second semiconductive thin film of mask etching according to the manufacturing method for semiconductor device of claim 10.
12., wherein discharge the described conductive material that comprises the positive photosensitive material by the droplet method for releasing according to the manufacturing method for semiconductor device of claim 9.
13. a manufacturing method for semiconductor device comprises:
On the first surface of substrate, form gate electrode;
Form the gate insulating film that covers this gate electrode;
On this gate insulating film, form first semiconductive thin film;
Be discharged on this first semiconductive thin film by the conductive material that will comprise the minus photochromics, form the first conductive film figure;
Use this gate electrode as mask, by from the second surface side of this substrate emission laser, the part of this first conductive film figure is exposed to laser, wherein this second surface is relative with first surface;
The first conductive film figure by development is exposed forms source electrode and drain electrode; And
Use source electrode and drain electrode are as this first semiconductive thin film of mask etching.
14. according to the manufacturing method for semiconductor device of claim 13, wherein this substrate has insulating surface.
15. according to the manufacturing method for semiconductor device of claim 13, further be included in the step that forms second semiconductive thin film on this first semiconductive thin film, this second semiconductive thin film comprises the impurity element that n type or p type electric conductivity are provided.
16., further comprise use source electrode and drain electrode step as this second semiconductive thin film of mask etching according to the manufacturing method for semiconductor device of claim 15.
17., wherein discharge the conductive material that comprises the positive photosensitive material by the droplet method for releasing according to the manufacturing method for semiconductor device of claim 13.
18. according to the manufacturing method for semiconductor device of claim 13, wherein form this source electrode and drain electrode in self aligned mode, feasible spacing therebetween equals the width of this gate electrode.
19. a semiconductive thin film comprises:
Grid wiring on the insulating surface of first substrate and at least one in the gate electrode;
Gate insulating film in grid wiring and the gate electrode at least one;
The semiconductor layer that comprises channel formation region on this gate insulating film; And
Be formed at source electrode or drain electrode on this semiconductor layer,
Wherein the spacing between the channel length of this channel formation region and this source electrode and the drain electrode has the width identical with the width of this gate electrode.
20., further be included in the pixel electrode that forms on this source electrode or this drain electrode according to the semiconductor device of claim 19.
21. according to the semiconductor device of claim 19, the semiconductor layer that wherein comprises channel formation region is the amorphous single-crystal semiconductor thin film that has added hydrogen or hydrogen halides, perhaps is polycrystalline semiconductor thin film.
22. according to the semiconductor device of claim 19, wherein this source electrode or drain electrode comprise photochromics.
23. according to the semiconductor device of claim 19, wherein this semiconductor device comprises first substrate, second substrate and places this paired first substrate and the liquid crystal between this second substrate.
24. according to the semiconductor device of claim 19, wherein this semiconductor device comprises a plurality of light-emitting components, described light-emitting component has negative electrode, includes the layer of organic compounds, anode and thin film transistor (TFT).
25. according to the semiconductor device of claim 19, wherein this semiconductor device is changed to image-sound bidirectional communication apparatus or general remote-control device.
CN 200580003270 2004-01-26 2005-01-24 Electronic device, semiconductor device and its manufacturing method Pending CN1914552A (en)

Applications Claiming Priority (3)

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JP017608/2004 2004-01-26
JP017583/2004 2004-01-26

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CN101997036A (en) * 2009-08-07 2011-03-30 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN102905472A (en) * 2011-07-27 2013-01-30 深圳市龙岗区华宇新材料研究中心 Method for manufacturing conducting circuits and conducting circuit board
WO2014117512A1 (en) * 2013-02-04 2014-08-07 广州新视界光电科技有限公司 Method for preparing thin film transistor, method for preparing thin film transistor driving back panel, and thin film transistor driving back panel
CN102113120B (en) * 2008-08-04 2014-10-22 普林斯顿大学理事会 Hybrid dielectric material for thin film transistors
CN105449119B (en) * 2009-09-04 2018-03-23 株式会社半导体能源研究所 Light-emitting device and its manufacture method
CN109449210A (en) * 2018-09-19 2019-03-08 云谷（固安）科技有限公司 Drive thin film transistor (TFT) and preparation method, array substrate and display device

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Publication number Priority date Publication date Assignee Title
CN102113120B (en) * 2008-08-04 2014-10-22 普林斯顿大学理事会 Hybrid dielectric material for thin film transistors
CN101997036A (en) * 2009-08-07 2011-03-30 株式会社半导体能源研究所 Semiconductor device and manufacturing method thereof
CN101997036B (en) * 2009-08-07 2015-07-29 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
US9837442B2 (en) 2009-08-07 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
CN105449119B (en) * 2009-09-04 2018-03-23 株式会社半导体能源研究所 Light-emitting device and its manufacture method
US10672915B2 (en) 2009-09-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US11024747B2 (en) 2009-09-04 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US11626521B2 (en) 2009-09-04 2023-04-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
CN102905472A (en) * 2011-07-27 2013-01-30 深圳市龙岗区华宇新材料研究中心 Method for manufacturing conducting circuits and conducting circuit board
WO2014117512A1 (en) * 2013-02-04 2014-08-07 广州新视界光电科技有限公司 Method for preparing thin film transistor, method for preparing thin film transistor driving back panel, and thin film transistor driving back panel
CN109449210A (en) * 2018-09-19 2019-03-08 云谷（固安）科技有限公司 Drive thin film transistor (TFT) and preparation method, array substrate and display device
CN109449210B (en) * 2018-09-19 2022-06-10 云谷（固安）科技有限公司 Array substrate and display device

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