CN1909116A - Nano-hole type polymethyl siloxane material with low dielectric constant and its preparation method and application - Google Patents
Nano-hole type polymethyl siloxane material with low dielectric constant and its preparation method and application Download PDFInfo
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Abstract
The invention relates to a nanometer polymethyl siloxane low-dielectric material, which uses mesh silicon-oxygen tetrahedron as main body at 500-1500 thick, and comprises silicon sheet layer and polymethyl siloxane film layer, wherein the film layer has holes whose diameter is 8-12nm, whole rate is 12-30% and the dielectric constant is 2.5-2.1. And the invention also provides a relative production, which comprises: said material can be used as the insulated material between signal layer, dual layer or multilayer metallic wires, to reduce the capacity between connected layers and the resistance of multi-layer core copper wires; and its mechanical property and processing property are higher than traditional CVD silicon dioxide.
Description
Technical field
The present invention relates to a kind of material of low-k, in particular, is a kind of nano-hole type polymethyl siloxane material with low dielectric constant.
The invention still further relates to the preparation method and the application of described advanced low-k materials.
Background technology
The develop rapidly of semiconductor integrated circuit technology is accompanied by the continuous lifting of constantly the reducing of live width, transistor density.Since IBM Corporation's microelectronics in 1998 took the lead in announcing to use copper interconnection technology, copper interconnection technology was little by little becoming the main flow technology that the high-performance VLSI (very large scale integrated circuit) chip is made.At present, the design of ultra-large type integrated circuit (IC) chip and manufacturing develop into the 7-10 layer from individual layer or double-deck chip.Companies such as international Intel, AMD, Motorola, Infineon, TSMC and UMC announce in succession and will use advanced low-k materials in 130nm and following technology thereof.The development of advanced low-k materials more and more comes into one's own, and development rapidly.
In traditional integrated circuit (IC) chip manufacturing process, CVD silicon dioxide technology is the insulating material that uses between individual layer or double-deck chip metal interconnection circuit always.Yet along with high-speed, high device density, the low energy consumption of integrated circuit, the chip that interconnects between multilayer more and more becomes the major product that very lagre scale integrated circuit (VLSIC) is made.Wire density in chip constantly increases, conductor width and spacing constantly reduce, bring resistance (R) and the electric capacity (C) between interconnection layer in the interconnecting lead to increase, cause its mutual ghost effect that produces (capacitance-resistance sluggishness, or RC delay) problem more and more obvious thus.
Capacitance-resistance sluggish will and cause and disturb between signal propagation delays, line and fatal problem such as power dissipation, be the key factor that the restriction chip performance promotes.Because the dielectric constant higher (k=4.2) of CVD silicon dioxide, can't stop the drawback that causes by the capacitance-resistance sluggishness, the solution of problem is except adopting resistivity than the low metallic copper lead of metallic aluminium, and the development advanced low-k materials substitutes traditional CVD silicon dioxide has become valid approach.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, providing a kind of is 2.5～2.1 nano-hole type polymethyl siloxane material with low dielectric constant by the pore of hud typed inorganic-organic hybridization thing, dielectric constant.
Another object of the present invention is to provide the preparation method and the application of described nano-hole type polymethyl siloxane material with low dielectric constant.
Nano-hole type polymethyl siloxane material with low dielectric constant of the present invention, be 500～1500nm, contain silicon wafer layer and methylsiloxane thin layer based on network-like silicon-oxy tetrahedron, thickness, contain hole in the described thin layer, the aperture is 8～12nm, voidage is 12～30%, and dielectric constant is 2.5～2.1.
Described nano-hole type polymethyl siloxane material with low dielectric constant, its thermal stability are higher than 500 degrees centigrade, modulus, and to be higher than water absorption rate in the 4.0GPa, 20～600 degrees centigrade thermal coefficient of expansion less than 0.2%, in the 50-400 degree centigrade be 60～80 (μ m/m degrees centigrade), fill out cover evenness be higher than 95%, fill out cover the residual bore dia of material less than 50nm, can tolerate chemico-mechanical polishing (CMP).
A kind of preparation method of nano-hole type polymethyl siloxane material with low dielectric constant of the present invention comprises the steps:
(1) synthesizing methyl polysiloxane precursor body
Methyl triethoxysilane and organic solvent A are mixed, dropwise add deionized water and concentrated hydrochloric acid then, continue to stir after 10 minutes in 30～90 ℃ of reactions 4～20 hours down, steam most of solvent after, obtain white methylsiloxane presoma;
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Octaphenyl ten dioxies eight silicon cubanes are joined in the mixed acid stirring at normal temperature until dissolving fully, reacted 5～10 hours down at 40～60 ℃ then, slowly reduce to room temperature, reactant liquor is poured in the frozen water, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituents;
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
The octaphenyl ten dioxies eight silicon cubane nitro substituents of step (2) preparation are dissolved in the organic solvent B, add palladium-carbon catalyst and hydrazine hydrate, reacted 1～10 hour down at 60～90 ℃, slowly reduce to room temperature, then filtration, recrystallization, refilter, wash, drying makes light yellow solid and is the amino substituent of octaphenyl ten dioxies eight silicon cubanes;
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
Ketone, 4-dihydroxy benzaldehyde in the amino substituent of the octaphenyl ten dioxies eight silicon cubanes of step (3) preparation and dihydroxy propionic aldehyde, the hexamethylene were refluxed in organic solvent C 2～40 hours, then after filtration, recrystallization, refilter, wash, drying and make light yellow solid and be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents;
(5) preparation film
The presoma of step (1) preparation and the hud typed pore-foaming agent of step (4) preparation are joined in 4-methyl-2 pentanone, stirring at normal temperature makes spin coating liquid until dissolving fully, the spin coating drop is added on the silicon chip, on sol evenning machine, rotated 10 seconds with 500 rev/mins earlier, rotate with 3000 rev/mins again and painted film in 30 seconds, toasted 30 minutes down at 60 ℃ then, be warmed up to 450 ℃ with the heating rate of 2 ℃/min respectively then, slowly reduce to room temperature after 30 minutes 450 ℃ of vacuum solidifications, get fine and close film and be advanced low-k materials of the present invention.
Organic solvent A is methyl alcohol, ethanol, toluene or oxolane described in the step (1); Organic solvent B is methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane described in the step (3); Organic solvent C is methyl alcohol, ethanol, oxolane, toluene, acetone or 4-methyl-2 pentanone described in the step (4);
The consumption volume ratio of described methyl triethoxysilane, organic solvent A, deionized water, concentrated hydrochloric acid is 5～40: 40～100: 2～10: 0.1～5.
Mixed acid is the mixed acid of nitric acid and sulfuric acid described in the step (2), and the volume ratio of nitric acid and sulfuric acid is 100～1: 0～90;
Described palladium-carbon catalyst is that palladium content is 5～20% palladium-carbon catalyst, and the amount ratio of described octaphenyl ten dioxies eight silicon cubane nitro substituents, organic solvent B, palladium-carbon catalyst, hydrazine hydrate is: 10～20: 20～100: 1～8: 1～10.
Spin coating liquid described in the step (5) is that the concentration of presoma and hud typed pore-foaming agent is 5～40% spin coating liquid.
Nano-hole type polymethyl siloxane material with low dielectric constant of the present invention can be used as the insulating material between individual layer, bilayer or multilayer chiop metal interconnection circuit.
The present invention compared with prior art has following advantage:
(1) the more traditional CVD silicon dioxide of the dielectric constant values of material reduces significantly, has reduced resistance (R) in the multilayer chiop copper cabling interconnecting lead and the electric capacity (C) between interconnection layer effectively.
(2) mechanical performance of material and processing characteristics are better than traditional CVD silicon dioxide, can tolerate chemico-mechanical polishing (CMP).
Description of drawings
Fig. 1 is the film layer structure schematic diagram of nano-hole type polymethyl siloxane material with low dielectric constant of the present invention;
Fig. 2 is the hydrogen nuclear magnetic resonance spectrogram of the amino substituent of intermediate octaphenyl ten dioxies eight silicon cubanes of the inventive method preparation;
Fig. 3 is the thermal weight loss/differential thermal behavior figure of hud typed pore-foaming agent octaphenyl ten dioxies of the intermediate eight silicon cubane branch substituents of the inventive method preparation;
Fig. 4 is the Fu Liye conversion infrared spectrogram of advanced low-k materials of the present invention.
Embodiment
Below in conjunction with embodiment the present invention is further described, the present invention is not limited to this.
Embodiment 1
(1) synthesizing methyl polysiloxane precursor body
In the there-necked flask of the 250ml that blender, thermometer, dropping funel are housed, add 10mL methyl triethoxysilane and 30ml second cyanogen, dropwise add 2.00ml deionized water and 0.14ml concentrated hydrochloric acid after stirring.Continue to stir after 10 minutes and reacted 10 hours down, after decompression steams most of solvent, obtain white solid methylsiloxane presoma 6.6g at 45 ℃.
Fu Liye conversion infrared spectrum (KBr, the cm of gained methylsiloxane presoma
-1): 3429w, 2980w, 2914vw, 2350w, 1622w, 1410s, 1114vs, 1035vs, 770s, 530w.6PC(Mw＝850～5000)。
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Take by weighing 4g octaphenyl ten dioxies eight silicon cubanes, the mixed acid (volume ratio of nitric acid and sulfuric acid 80: 20) that adds 20mL nitric acid and sulfuric acid, stirring at normal temperature is until dissolving fully, reacted 5 hours down at 60 ℃, slowly reduce to room temperature, then reactant liquor is poured in the frozen water of 600mL, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituent 5.54g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained octaphenyl ten dioxies eight silicon cubane nitro substituents
-1) be: 3100.90w and 2878.58w, 1621.37w, 1540.88vs, 1456.55w, 1349.23vs, 1119.25vs, 916.10w, 881.61w, 728.29m, 663.13w, 505.97vs.
1H-NMR (ppm, in acetone-d
6): 9.061 (d, 1H), 8.397 (m, 2H).
13C-NMR (ppm, in acetone-d
6): 156.664m, 148.531s, 134.292s, 128.632m, 121.600m.
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
Eight silicon cubane nitro substituent 5.54g are dissolved in the 40mL organic solvent (methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane) with octaphenyl ten dioxies, add palladium-carbon catalyst (palladium content 10%) 0.8g, ethylenediamine 10mL and hydrazine hydrate 0.5mL, reacted 5 hours down at 70 ℃, slowly reduce to room temperature, after filtration, recrystallization, refilter, wash, drying, light yellow solid be the amino substituent 3.56g of octaphenyl ten dioxies eight silicon cubanes.The proton nmr spectra of the amino substituent of gained octaphenyl ten dioxies eight silicon cubanes as shown in Figure 2.
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
With the amino substituent of octaphenyl ten dioxies eight silicon cubanes and 4-dihydroxy benzaldehyde reflux in toluene 4 hours, after filtration, recrystallization, refilter, wash, drying, light yellow solid be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents.Thermal weight loss/differential thermal analysis the result of hud typed pore-foaming agent octaphenyl ten dioxies of gained eight silicon cubane branch substituents shows: the decomposition temperature of octaphenyl ten dioxies eight silicon cubane branch substituents is at 320～420 degrees centigrade, and its thermal weight loss behavior as shown in Figure 3.
(5) preparation film
Methylsiloxane presoma and hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents are joined in 30mL4-methyl-2 pentanone, and it is 5.0% spin coating liquid that stirring at normal temperature obtains concentration until dissolving fully.The spin coating drop is added on the silicon chip, on sol evenning machine, rotated 10 seconds with 500 rev/mins earlier, then rotate and painted film in 30 seconds with 3000 rev/mins.Through 60 ℃ of bakings 30 minutes, be warmed up to 450 ℃ with the heating rate of 2 ℃/min respectively then, slowly reduce to room temperature after 30 minutes 450 ℃ of vacuum solidifications, get fine and close film as shown in Figure 1, be nano-hole type polymethyl siloxane material with low dielectric constant of the present invention, its dielectric constant is 2.5, and its Fu Liye conversion infrared spectrum as shown in Figure 4.
(1) synthesizing methyl polysiloxane precursor body
In the there-necked flask of the 250ml that blender, thermometer, dropping funel are housed, add 10mL methyl triethoxysilane and 30ml methyl alcohol, dropwise add 1.62ml deionized water and 0.13ml concentrated hydrochloric acid after stirring.Continue to stir after 10 minutes 30 ℃ of reactions 20 hours down, steam most of solvent after, obtain white solid methylsiloxane presoma 6.8g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained methylsiloxane presoma
-1): 3429w, 2980w, 2914vw, 2350w, 1622w, 1410s, 1114vs, 1035vs, 770s, 530w.GPC(Mw＝850～5000)。
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Take by weighing 4g octaphenyl ten dioxies eight silicon cubanes, add in the 40mL nitric acid, stirring at normal temperature is until dissolving fully, reacted 10 hours down at 40 ℃, slowly reduce to room temperature, then reactant liquor is poured in the frozen water of 400mL, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituent 5.54g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained octaphenyl ten dioxies eight silicon cubane nitro substituents
-1) be: 3100.90w and 2878.58w, 1621.37w, 1540.88vs, 1456.55w, 1349.23vs, 1119.25vs, 916.10w, 881.61w, 728.29m, 663.13w, 505.97vs.
1H-NMR (ppm, in acetone-d
6): 9.061 (d, 1H), 8.397 (m, 2H).
13C-NMR (ppm, in acetone-d
6): 156.664m, 148.531s, 134.292s, 128.632m, 121.600m.
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
Eight silicon cubane nitro substituent 5.54g are dissolved in the 40mL organic solvent (methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane) with octaphenyl ten dioxies, add palladium-carbon catalyst (palladium content 5%) 1.5g and hydrazine hydrate 0.5mL, reacted 8 hours down at 80 ℃, slowly reduce to room temperature, after filtration, recrystallization, refilter, wash, drying, light yellow solid be the amino substituent 3.27g of octaphenyl ten dioxies eight silicon cubanes.The proton nmr spectra of the amino substituent of gained octaphenyl ten dioxies eight silicon cubanes as shown in Figure 2.
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
With the amino substituent of octaphenyl ten dioxies eight silicon cubanes respectively with dihydroxy propionic aldehyde, hexamethylene in ketone, 4-dihydroxy benzaldehyde in methyl alcohol or oxolane, refluxed 2 hours, after filtration, recrystallization, refilter, wash, drying, light yellow solid be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents.Thermal weight loss/differential thermal analysis the result of hud typed pore-foaming agent octaphenyl ten dioxies of gained eight silicon cubane branch substituents shows: the decomposition temperature of octaphenyl ten dioxies eight silicon cubane branch substituents is at 320～420 degrees centigrade, and its thermal weight loss behavior as shown in Figure 3.
(5) preparation film
Employing concentration is 15.0% spin coating liquid, and other are identical with (5) among the embodiment 1.The material dielectric constant that obtains is 2.1.
Embodiment 3
(1) synthesizing methyl polysiloxane precursor body
In the there-necked flask of the 250ml that blender, thermometer, dropping funel are housed, add 10mL methyl triethoxysilane and 50ml toluene, dropwise add 1.53ml deionized water and 0.3ml concentrated hydrochloric acid after stirring.Continue to stir after 10 minutes 80 ℃ of reactions 8 hours down, steam most of solvent after, obtain white solid methylsiloxane presoma 5.2g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained methylsiloxane presoma
-1): 3429w, 2980w, 2914vw, 2350w, 1622w, 1410s, 1114vs, 1035vs, 770s, 530w.GPC(Mw＝850～5000)。
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Take by weighing 4g octaphenyl ten dioxies eight silicon cubanes, the mixed acid (volume ratio of nitric acid and sulfuric acid 1: 90) that adds 30mL nitric acid and sulfuric acid, stirring at normal temperature is until dissolving fully, reacted 8 hours down at 50 ℃, slowly reduce to room temperature, then reactant liquor is poured in the frozen water of 500mL, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituent 5.54g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained octaphenyl ten dioxies eight silicon cubane nitro substituents
-1) be: 3100.90w and 2878.58w, 1621.37w, 1540.88vs, 1456.55w, 1349.23vs, 1119.25vs, 916.10w, 881.61w, 728.29m, 663.13w, 505.97vs.
1H-NMR (ppm, in acetone-d
6): 9.061 (d, 1H), 8.397 (m, 2H).
13C-NMR (ppm, in acetone-d
6): 156.664m, 148.531s, 134.292s, 128.632m, 121.600m.
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
Eight silicon cubane nitro substituent 5.53g are dissolved among the 40mL (methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane) with octaphenyl ten dioxies, add palladium-carbon catalyst (palladium content 10%) 1.0g, triithylamine 10mL, formaldehyde 3.5mL, reacted 10 hours down at 60 ℃, slowly reduce to room temperature, after filtration, recrystallization, refilter, wash, drying, light yellow solid be the amino substituent 3.23g of octaphenyl ten dioxies eight silicon cubanes.Proton nmr spectra such as Fig. 2 of the amino substituent of gained octaphenyl ten dioxies eight silicon cubanes.
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
Amino substituent of octaphenyl ten dioxies eight silicon cubanes and dihydroxy propionic aldehyde were refluxed in oxolane 30 hours, after filtration, recrystallization, refilter, wash, drying, light yellow solid be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents.Thermal weight loss/differential thermal analysis the result of hud typed pore-foaming agent octaphenyl ten dioxies of gained eight silicon cubane branch substituents shows: the decomposition temperature of octaphenyl ten dioxies eight silicon cubane branch substituents is at 320～420 degrees centigrade, and its thermal weight loss behavior as shown in Figure 3.
(5) preparation film
Employing concentration is 30.0% spin coating liquid, and other are identical with (5) among the embodiment 1.The material dielectric constant that obtains is 2.3.
Embodiment 4
(1) synthesizing methyl polysiloxane precursor body
In the there-necked flask of the 250ml that blender, thermometer, dropping funel are housed, add 10mL methyl triethoxysilane and 50ml ethanol, dropwise add 2.83ml deionized water and 0.15ml concentrated hydrochloric acid after stirring.Continue to stir after 10 minutes 90 ℃ of reactions 4 hours down, steam most of solvent after, obtain white solid methylsiloxane presoma 5.6g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained methylsiloxane presoma
-1): 3429w, 2980w, 2914vw, 2350w, 1622w, 1410s, 1114vs, 1035vs, 770s, 530w.GPC(Mw＝850～5000)。
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Take by weighing 4g octaphenyl ten dioxies eight silicon cubanes, the mixed acid (volume ratio of nitric acid and sulfuric acid 1: 1) that adds 30mL nitric acid and sulfuric acid, stirring at normal temperature is until dissolving fully, reacted 10 hours down at 40 ℃, slowly reduce to room temperature, then reactant liquor is poured in the frozen water of 500mL, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituent 5.43g.
Fu Liye conversion infrared spectrum (KBr, the cm of gained octaphenyl ten dioxies eight silicon cubane nitro substituents
-1) be: 3100.90w and 2878.58w, 1621.37w, 1540.88vs, 1456.55w, 1349.23vs, 1119.25vs, 916.10w, 881.61w, 728.29m, 663.13w, 505.97vs.
1H-NMR (ppm, in acetone-d
6): 9.061 (d, 1H), 8.397 (m, 2H).
13C-NMR (ppm, in acetone-d
6): 156.664m, 148.531s, 134.292s, 128.632m, 121.600m.
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
Eight silicon cubane nitro substituent 5.53g are dissolved among the 40mL (methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane) with octaphenyl ten dioxies, add palladium-carbon catalyst (palladium content 10%) 1.0g and hydrazine hydrate 0.7mL, reacted 1 hour down at 90 ℃, slowly reduce to room temperature, after filtration, recrystallization, refilter, wash, drying, light yellow solid be the amino substituent 3.45g of octaphenyl ten dioxies eight silicon cubanes.The proton nmr spectra of the amino substituent of gained octaphenyl ten dioxies eight silicon cubanes as shown in Figure 2.
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
Ketone in the amino substituent of octaphenyl ten dioxies eight silicon cubanes and the hexamethylene was refluxed in ethanol 20 hours, after filtration, recrystallization, refilter, wash, drying, must light yellow solid be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents.Thermal weight loss/differential thermal analysis the result of hud typed pore-foaming agent octaphenyl ten dioxies of gained eight silicon cubane branch substituents shows: the decomposition temperature of octaphenyl ten dioxies eight silicon cubane branch substituents is at 320～420 degrees centigrade, and its thermal weight loss behavior as shown in Figure 3.
(5) preparation film
Employing concentration is 40.0% spin coating liquid, and other are identical with (5) among the embodiment 1.The material dielectric constant that obtains is 2.4.
Claims (8)
1. nano-hole type polymethyl siloxane material with low dielectric constant, it is characterized in that being 500～1500nm, containing silicon wafer layer and polymethyl siloxane thin layer based on network-like silicon-oxy tetrahedron, thickness, contain hole in the described thin layer, the aperture is 8～12nm, voidage is 12～30%, and dielectric constant is 2.5～2.1.
2. the preparation method of the described nano-hole type polymethyl siloxane material with low dielectric constant of claim 1 is characterized in that comprising the steps:
(1) synthesizing methyl polysiloxane precursor body
Methyl triethoxysilane and organic solvent A are mixed, dropwise add deionized water and concentrated hydrochloric acid then, continue to stir after 10 minutes and reacted 4～20 hours down, steam solvent, obtain white methylsiloxane presoma in 30～90 ℃;
(2) synthetic intermediate octaphenyl ten dioxies eight silicon cubane nitro substituents
Octaphenyl ten dioxies eight silicon cubanes are joined in the mixed acid stir until dissolving fully, reacted 5～10 hours down at 40～60 ℃ then, reduce to room temperature, reactant liquor is poured in the frozen water, after filtration, washing, drying, light yellow solid be octaphenyl ten dioxies eight silicon cubane nitro substituents;
(3) the amino substituent of synthetic intermediate octaphenyl ten dioxies eight silicon cubanes
The octaphenyl ten dioxies eight silicon cubane nitro substituents of step (2) preparation are dissolved in the organic solvent B, add palladium-carbon catalyst and hydrazine hydrate, reacted 1～10 hour down at 60～90 ℃, reduce to room temperature, then filtration, recrystallization, refilter, wash, drying makes light yellow solid and is the amino substituent of octaphenyl ten dioxies eight silicon cubanes;
(4) the hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents of preparation
Ketone, 4-dihydroxy benzaldehyde in the amino substituent of the octaphenyl ten dioxies eight silicon cubanes of step (3) preparation and dihydroxy propionic aldehyde, the hexamethylene were refluxed in organic solvent C 2～40 hours, then after filtration, recrystallization, refilter, wash, drying and make light yellow solid and be hud typed pore-foaming agent octaphenyl ten dioxies eight silicon cubane branch substituents;
(5) preparation film
The presoma of step (1) preparation and the hud typed pore-foaming agent of step (4) preparation are joined in 4-methyl-2 pentanone, stirring makes spin coating liquid until dissolving fully, the spin coating drop is added on the silicon chip, on sol evenning machine, rotated 10 seconds with 500 rev/mins earlier, rotate with 3000 rev/mins again and painted film in 30 seconds, toasted 20 minutes down at 60 ℃ then, be warmed up to 450 ℃ with the heating rate of 2 ℃/min respectively then, slowly reduce to room temperature after 30 minutes 450 ℃ of vacuum solidifications, get fine and close film and be advanced low-k materials of the present invention.
Organic solvent A is methyl alcohol, ethanol, toluene or oxolane described in the step (1); The described organic solvent B of step (3) is methyl-sulfoxide, dimethylacetylamide, cyclohexanone or oxolane; The described organic solvent C of step (4) is methyl alcohol, ethanol, oxolane, toluene, acetone or 4-methyl-2 pentanone.
3. method according to claim 2 is characterized in that the consumption volume ratio of the described methyl triethoxysilane of step (1), organic solvent A, deionized water, concentrated hydrochloric acid is 5～40: 40～100: 2～10: 0.1～5.
4. method according to claim 2 is characterized in that the described mixed acid of step (2) is the mixed acid of nitric acid and sulfuric acid, and the volume ratio of nitric acid and sulfuric acid is 100～1: 0～90.
5. method according to claim 2 is characterized in that the described palladium-carbon catalyst of step (3) is that palladium content is the palladium-carbon catalyst of 5～20% weight.
6. method according to claim 2 is characterized in that the amount ratio of described octaphenyl ten dioxies of step (3) eight silicon cubane nitro substituents, organic solvent B, palladium-carbon catalyst, hydrazine hydrate is 10～20: 20～100: 1～8: 1～10.
7. method according to claim 2 is characterized in that concentration that the described spin coating liquid of step (5) is presoma and hud typed pore-foaming agent is 5～40% spin coating liquid.
8. the application of the described nano-hole type polymethyl siloxane material with low dielectric constant of claim 1 is characterized in that as the insulating material between individual layer, bilayer or multilayer chiop metal interconnection circuit.
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| FR2694934B1 (en) * | 1992-08-24 | 1994-11-10 | Oreal | Composition for the treatment of acne containing a salicylic acid derivative and salicylic acid derivatives. |
| JPH10218690A (en) * | 1997-02-06 | 1998-08-18 | Kyocera Corp | Production of silicious porous film |
| JP4408994B2 (en) * | 1999-07-13 | 2010-02-03 | Ａｚエレクトロニックマテリアルズ株式会社 | Low dielectric constant porous siliceous film, semiconductor device and coating composition |
| JP4722269B2 (en) * | 2000-08-29 | 2011-07-13 | Ａｚエレクトロニックマテリアルズ株式会社 | Low dielectric constant porous siliceous film, semiconductor device and coating composition, and method for producing low dielectric constant porous siliceous film |
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2006
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412142A (en) * | 2011-04-29 | 2012-04-11 | 上海华力微电子有限公司 | Ultra-low dielectric constant film and method for preventing same from being damaged |
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