CN1904728A - Method for generating dense and isolated contact hole pattern by identical energy twice exposures - Google Patents
Method for generating dense and isolated contact hole pattern by identical energy twice exposures Download PDFInfo
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- CN1904728A CN1904728A CNA200510084996XA CN200510084996A CN1904728A CN 1904728 A CN1904728 A CN 1904728A CN A200510084996X A CNA200510084996X A CN A200510084996XA CN 200510084996 A CN200510084996 A CN 200510084996A CN 1904728 A CN1904728 A CN 1904728A
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- pattern
- contact hole
- hole pattern
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Abstract
The invention discloses a twice exposal photolithography making technology. It includes the following steps: supplying a masking image that includes a group of denseness contact cavity image and the plural insulated contact cavity image; decomposing the image to sub-masking image; forming two phase shift masking that has one sub-masking image and setting plural virtual images near the area of contact cavity image; forming sensitive layer on base; locating the two pieces phase shift masking on base and taking two exposal process to expose the masking image on the photosensitive layer corresponding to the two pieces of phase shift masking.
Description
Technical field
The present invention is about the semiconductor fabrication process field, particularly relevant for can be in photoetching making technology clearly exposing the intensive contact hole in the integrated circuit and the method for isolated contact hole pattern with two masks and double exposure with identical exposure energy in photoresistance.
Background technology
Photoetching making technology is important technology indispensable in the body circuit fabrication process, and along with the progress and development of optical projection photoetching technique, made assembly and circuit in the integrated circuit to do littler and littler, therefore, the chip dealer can produce semiconductor subassembly with better function and that cost is lower.
So-called optical photoetching making technology is exactly that elder generation is coated with photosensitive materials such as photoresistance on silicon wafer surface, after the drying with stepping and scan exposure machine the circuit design pattern on the mask is exposed to the sun with specific light source on this layer photosensitive material, subsequently, again with developer with developing photosensitive material, utilize the pattern that develops out as shielding at last, carry out manufacture crafts such as etching, finish the transfer of mask pattern.
Often expose trickleer pattern in the conventional art, yet because the size of components in the integrated circuit is dwindled day by day, this makes list present the problem of lack of resolution by the mode of dwindling exposure wavelength with the exposure wavelength that dwindles exposure light source.In order to increase the resolution of optical lithography manufacture craft, developed so-called resolution enhance technology (resolutionenhancement technology) such as to have approaching correction of optics and phase shift mask at present.
Along with the critical size of the integrated circuit following grade of 100 nanometers of marching toward, accurately expose the interlayer hole (via) or the contact hole that link the different layers conductor as if more and more be key and difficult to the tram on wafer with the optical lithography manufacture craft.In the related art, United States Patent (USP) promptly discloses a kind of can exposing to the sun for No. 6541166 and prints off the have different spacing photoetching making process of contact hole pattern of (pitch) in substrate, its principle is the contact hole pattern that has different spacing on original mask to be disassembled according to the spacing size to divide into two groups earlier, it comprises one group of intensive contact hole pattern, its spacing is less than certain predetermined value, and another group isolated contact hole pattern, its spacing is greater than this predetermined value, again this two picture groups case is respectively formed on two inferior masks, then utilize these twice masks and twice double exposure, this two set of contact hole pattern is successively exposed to the sun to be imprinted on the photoresist layer of substrate surface.
The shortcoming of above-mentioned prior art is the contact hole pattern that originally had different spacing disassembled and divides into one group of intensive contact hole pattern and one group of isolated contact hole pattern and will cause and need respectively to adjust suitable exposure energy size in double exposure, makes that the exposure energy parameter that two exposure steps adopted is inequality.Owing to need extra parameter adjustment step, even this may cause the decline of losing yields on the production capacity.
Summary of the invention
Fundamental purpose of the present invention promptly is to provide a kind of photoetching making technology of improvement, can utilize two masks and accurately expose to the sun with identical exposure energy in two exposure steps and print off intensive and isolated contact hole pattern, to solve above-mentioned prior art problems.
According to a preferred embodiment of the invention, the present invention discloses a kind of double exposure photoetching making technology, one mask pattern at first is provided, it includes the intensive contact hole pattern of a group at least, and the spacing of the intensive contact hole pattern of this group is less than a predetermined value, and a plurality of isolated contact hole patterns, and the spacing of this isolated contact hole pattern is greater than this predetermined value; This mask pattern is resolved into mask pattern two times, this time mask pattern wherein has the intensive contact hole pattern of this group of about half and this isolated contact hole pattern of about half, and another this time mask pattern then has the intensive contact hole pattern of remaining this group and remaining this isolated contact hole pattern; Then form two phase shift masks, respectively this phase shift mask has one of these two mask patterns respectively, and is provided with a plurality of dummy pattern in the contiguous peripheral region of its contact hole pattern; In a substrate, form a photographic layer then; Successively these two phase shift masks are placed in this substrate, and utilize the rough equal two exposure steps of exposure energy, relative this time mask pattern on these two phase shift masks is exposed to the sun is imprinted in this photographic layer in regular turn.
In order to enable further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing is only for reference and aid illustration usefulness, is not to be used for the present invention is limited.
Description of drawings
Shown in Fig. 1 is mask pattern of one embodiment of the present invention and the inferior mask pattern synoptic diagram that is come by the mask pattern decomposition.
Shown in Fig. 2 is the mask pattern of another preferred embodiment of the present invention and the inferior mask pattern synoptic diagram that is come by the mask pattern decomposition.
The primary clustering symbol description
10 mask patterns, 20 contact hole patterns
21-26 light penetration region 28 light tight zones
110 mask pattern 128 light tight zones
210 mask patterns of 130 dummy pattern
228 light tight regional 230 dummy pattern
310 mask patterns of 300 mask patterns
328 light tight regional 410 mask patterns
428,528 light tight regional 520 intensive contact hole patterns
521-526 light penetration region 530 intensive contact hole patterns
531-532 light penetration region 540 intensive contact hole patterns
541-542 light penetration region 561-564 light penetration region
730 dummy pattern, 830 dummy pattern
Embodiment
See also Fig. 1, shown in it is the mask pattern synoptic diagram of the preferred embodiment of the present invention.As shown in Figure 1, mask pattern 10 comprises the intensive contact hole pattern of a group 20, and represents that with a plurality of closely spaced smooth penetration region 21-26 mask pattern 10 comprises light shaded areas 28 in addition respectively.Light penetration region 21-26 is imprinted on semiconductor suprabasil small contact hole or interlayer hole pattern with exposing to the sun via photoetching making technology.These light penetration region 21-26 that are used for forming small contact hole or interlayer hole pattern are each other near being arranged in together, all are being spacing relatively more closely on the directions X or on the Y direction no matter form.
According to a preferred embodiment of the invention, each represents the size of light penetration region 21-26 of small contact hole or interlayer hole pattern all less than 0.2 micron.Wide (space) approximates critical dimension or is formed on the minimum feature of the suprabasil circuit of semiconductor between between two adjacent light penetration region 21-26.According to a preferred embodiment of the invention, wide approximately less than 0.2 micron between between two adjacent light penetration region 21-26, and the intensive contact hole pattern 20 of this group in directions X or the spacing on the Y direction all less than 0.4 micron.
In fact, its size of pattern that is formed on the mask can not equate usually fully with the pattern dimension that is imprinted on the wafer that exposes to the sun, if will print off big than the pattern on the mask a little pattern dimension exposing to the sun on the wafer, then can be adjusted to so-called " overexposure (over-exposure) " state with illuminating dose (radiation dose) increase of exposure machine or with conditions of exposure, otherwise, if will print off little than the pattern on the mask a little pattern dimension exposing to the sun on the wafer, then the illuminating dose of exposure machine can be adjusted to " not enough exposure (under-exposure) " state.Industry will be exposed to the sun not only usually and is imprinted on pattern dimension on the wafer and the deviation between the pattern dimension on the mask but also be called " mask deviate (mask bias) ".In addition, the enlargement ratio of stepping board is generally four times (4 *), yet, be simplified illustration in the following, aforesaid " mask deviate " will be assumed to be zero, and the enlargement ratio of stepping board is assumed to be one times (1 *).
In Fig. 1, mask pattern 10 is broken down into mask pattern 110 and 210 two times, wherein time mask pattern 110 comprises light penetration region 22, light penetration region 24 and the light penetration region 26 in original intensive contact hole pattern 20, and inferior mask pattern 210 comprises light penetration region 21, light penetration region 23 and light penetration region 25 in original intensive contact hole pattern 20.One of principal character of the present invention is broken down into two inferior mask patterns 110 and 210 all comparatively isolated on pattern density for little spacing, intensive contact hole pattern 20 on original mask pattern 10, in addition, inferior mask pattern 110 and 210 pattern density are rough equates.
According to a preferred embodiment of the invention, aforesaid two time mask patterns 110 and 210 are phase shift mask (phase shifting mask).As shown in Figure 1, set up a plurality of dummy pattern (dummy feature) 130 in the contiguous peripheral region of light penetration region 22, light penetration region 24 and the light penetration region 26 of inferior mask pattern 110 respectively.All the other zones of inferior mask pattern 110 then are light tight regional 128.Similarly, set up a plurality of dummy pattern 230 in the contiguous peripheral region of light penetration region 21, light penetration region 23 and the light penetration region 25 of inferior mask pattern 210 respectively.All the other zones of inferior mask pattern 210 then are light tight regional 228.Aforesaid dummy pattern 130 and dummy pattern 230 its sizes are all less than the analytic ability of exposure bench, that is can not exposed to the sun to printing off and, and dummy pattern 130 and dummy pattern 230 are the light penetration region, its transmittance is identical with light penetration region 21-26, and still the phase differential with light penetration region 21-26 is 180 degree.
Next, carry out identical step of exposure twice, and the mask that has aforementioned two mask patterns 110 and 210 is respectively used in two exposure steps respectively.For example, in primary step of exposure, the mask that will have inferior mask pattern 110 places exposure bench, earlier contact hole pattern 22,24 and 26 is exposed to the sun and print off, and primary step of exposure is adjusted to the best with the imaging parameters of exposure bench such as exposure energy etc. in advance, to cooperate time comparatively loose spacing of mask pattern 110.In second time step of exposure, the mask that will have inferior mask pattern 210 places exposure bench, earlier contact hole pattern 21,23 and 25 is exposed to the sun and print off, and secondary conditions of exposure, as exposure energy etc., then be identical, do not need basically to adjust again with employed conditions of exposure in the first time step of exposure.In addition, aforesaid first time, step of exposure can be exchanged with the order of step of exposure for the second time.
See also Fig. 2, shown in it is the mask pattern of another preferred embodiment of the present invention and the inferior mask pattern synoptic diagram that is come by the mask pattern decomposition.As shown in Figure 2, mask pattern 300 comprises that a group closely is arranged in contact hole pattern 520 together, represent with light penetration region 521-526 respectively, wherein light penetration region 521-526 again with Fig. 1 in light penetration region 21-26 similar.The zone, the upper left corner of mask pattern 300 has the contact hole pattern 530 that closely is arranged in together in addition, with light penetration region 531 and 532 expressions, the contact hole pattern 540 that closely is arranged in is together arranged then in zone, the lower right corner, with light penetration region 541 and 542 expressions.In addition, mask pattern 300 also has isolated contact hole pattern 561-564 and light tight regional 528.
Light penetration region 521-526,531-532,541-542 and 561-564 expose to the sun via photoetching making technology to being imprinted on semiconductor suprabasil small contact hole or interlayer hole pattern, mainly are to be used for the conductor of the different circuit layers of electrical ties.Light penetration region 521-526 is each other near being arranged in together, all is being spacing relatively more closely on the directions X or on the Y direction no matter form.For example, though light penetration region 521-526 spacing each other directions X or on the Y direction all less than 0.4 micron.
Light penetration region 531 and 532 are spacing relatively more closely on directions X.For example, light penetration region 531 and 532 spacing on directions X less than 0.4 micron.Light penetration region 541 and 542 are spacing relatively more closely on the Y direction.For example, light penetration region 541 and 542 spacing on the Y direction less than 0.4 micron.Light penetration region 561-564 is then far away, therefore relatively comparatively isolated with other contact hole pattern distance.For example, the spacing of light penetration region 561-564 needs more than or equal to 450 nanometers.
According to the present invention, mask pattern 300 is broken down into mask pattern 310 and 410 two times, wherein time mask pattern 310 comprises the light penetration region 522,524 and 526 of intensive contact hole pattern 520 in original mask pattern 300, the light penetration region 531 of intensive contact hole pattern 540, the light penetration region 542 of intensive contact hole pattern 540, and the light penetration region 561 and 563 of isolated contact hole pattern.And inferior mask pattern 410 comprises the light penetration region 521,523 and 525 of intensive contact hole pattern 520 in original mask pattern 300, the light penetration region 532 of intensive contact hole pattern 540, the light penetration region 541 of intensive contact hole pattern 540, and the light penetration region 562 and 564 of isolated contact hole pattern.Key character of the present invention is original mask pattern 300 is resolved into two all relative more isolated inferior mask patterns 310 and 410 on pattern density, and the pattern density of inferior mask pattern 310 and 410 is rough equal.
Same, aforementioned two mask patterns 310 and 410 are the phase shift mask.As shown in Figure 2, set up a plurality of dummy pattern 730 in the contiguous peripheral region of the light penetration region of inferior mask pattern 310 respectively.All the other zones of inferior mask pattern 310 then are light tight regional 328.Similarly, set up a plurality of dummy pattern 830 in the contiguous peripheral region of the light penetration region of inferior mask pattern 410 respectively.All the other zones of inferior mask pattern 410 then are light tight regional 428.Aforesaid dummy pattern 730 and dummy pattern 830 its sizes are all less than the analytic ability of exposure bench, that is can not exposed to the sun and print off, and dummy pattern 730 and dummy pattern 830 be the light penetration region, but are 180 to spend with the phase differential of light penetration region.
The above only is the preferred embodiments of the present invention, and is all according to equalization variation and modification that the present invention did, all should belong to covering scope of the present invention.
Claims (10)
1. double exposure photoetching making technology includes the following step:
One mask pattern is provided, and it includes the intensive contact hole pattern of a group, and the spacing of the intensive contact hole pattern of this group is less than a predetermined value, and a plurality of isolated contact hole pattern, and the spacing of this isolated contact hole pattern is greater than this predetermined value;
This mask pattern is resolved into mask pattern two times, this time mask pattern wherein has the intensive contact hole pattern of this group of about half and this isolated contact hole pattern of about half, and another this time mask pattern then has the intensive contact hole pattern of remaining this group and remaining this isolated contact hole pattern;
Form two phase shift masks, respectively this phase shift mask has one of these two mask patterns respectively, and is provided with a plurality of dummy pattern in the contiguous peripheral region of its contact hole pattern;
In a substrate, form a photographic layer;
Successively these two phase shift masks are placed in this substrate;
Utilize the rough equal two exposure steps of exposure energy, relative this time mask pattern on these two phase shift masks is exposed to the sun is imprinted in this photographic layer in regular turn.
2. double exposure photoetching making technology according to claim 1 is characterized in that this predetermined value is about 0.4 micron.
3. double exposure photoetching making technology according to claim 1 is characterized in that, the size of this dummy pattern needs the analytic ability less than an exposure bench.
4. double exposure photoetching making technology according to claim 1 is characterized in that, the phase differential of this dummy pattern and this contact hole pattern is 180 degree.
5. double exposure photoetching making technology according to claim 1 is characterized in that respectively this time mask pattern is all comparatively isolated compared to this mask pattern.
6. double exposure photoetching making technology includes the following step:
One mask pattern is provided, and it includes the intensive contact hole pattern of a group, and the spacing of the intensive contact hole pattern of this group is less than a predetermined value;
This mask pattern is resolved into mask pattern two times, and one of them this time mask pattern has the intensive contact hole pattern of this group of about half, and another this time mask pattern then has the intensive contact hole pattern of remaining this group;
Form two phase shift masks, respectively this phase shift mask has one of these two mask patterns respectively, and is provided with a plurality of dummy pattern in the contiguous peripheral region of its contact hole pattern;
In a substrate, form a photographic layer;
Successively these two phase shift masks are placed in this substrate;
Utilize the rough equal two exposure steps of exposure energy, relative this time mask pattern on these two phase shift masks is exposed to the sun is imprinted in this photographic layer in regular turn.
7. double exposure photoetching making technology according to claim 6 is characterized in that this predetermined value is about 0.4 micron.
8. double exposure photoetching making technology according to claim 6 is characterized in that, the size of this dummy pattern needs the analytic ability less than an exposure bench.
9. double exposure photoetching making technology according to claim 6 is characterized in that, the phase differential of this dummy pattern and this contact hole pattern is 180 degree.
10. double exposure photoetching making technology according to claim 6 is characterized in that respectively this time mask pattern is all comparatively isolated compared to this mask pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200510084996XA CN1904728A (en) | 2005-07-26 | 2005-07-26 | Method for generating dense and isolated contact hole pattern by identical energy twice exposures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200510084996XA CN1904728A (en) | 2005-07-26 | 2005-07-26 | Method for generating dense and isolated contact hole pattern by identical energy twice exposures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1904728A true CN1904728A (en) | 2007-01-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200510084996XA Pending CN1904728A (en) | 2005-07-26 | 2005-07-26 | Method for generating dense and isolated contact hole pattern by identical energy twice exposures |
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| CN (1) | CN1904728A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281359B (en) * | 2007-04-06 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing attenuation type phase displacement light shield |
| CN101907825A (en) * | 2010-07-07 | 2010-12-08 | 湖北联合天诚防伪技术有限公司 | Photoetching encrypted anti-counterfeiting method |
| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN109828432A (en) * | 2017-11-23 | 2019-05-31 | 力晶科技股份有限公司 | Phase-shift type photomask and preparation method thereof |
-
2005
- 2005-07-26 CN CNA200510084996XA patent/CN1904728A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101281359B (en) * | 2007-04-06 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing attenuation type phase displacement light shield |
| CN101907825A (en) * | 2010-07-07 | 2010-12-08 | 湖北联合天诚防伪技术有限公司 | Photoetching encrypted anti-counterfeiting method |
| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN104752169B (en) * | 2013-12-30 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | The forming method of mask pattern |
| CN109828432A (en) * | 2017-11-23 | 2019-05-31 | 力晶科技股份有限公司 | Phase-shift type photomask and preparation method thereof |
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Open date: 20070131 |