CN1902340A - Method for controlling electrodeposition of an entity and devices incorporating the immobilized entity - Google Patents
Method for controlling electrodeposition of an entity and devices incorporating the immobilized entity Download PDFInfo
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- CN1902340A CN1902340A CNA2004800391550A CN200480039155A CN1902340A CN 1902340 A CN1902340 A CN 1902340A CN A2004800391550 A CNA2004800391550 A CN A2004800391550A CN 200480039155 A CN200480039155 A CN 200480039155A CN 1902340 A CN1902340 A CN 1902340A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/22—Servicing or operating apparatus or multistep processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/04—Electrophoretic coating characterised by the process with organic material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y5/00—Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Molecular Biology (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Biotechnology (AREA)
- Pharmacology & Pharmacy (AREA)
- Biophysics (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Medical Informatics (AREA)
- Medicinal Chemistry (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Peptides Or Proteins (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
- Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to a method and system for controlling electrodeposition of a deposition entity in which a solution or suspension of the deposition entity is provided between a pair of superposed electrodes at a predetermined concentration. A potential is applied to the electrodes sufficient to cause migration of the deposition entity to one of the electrodes and deposition of a controlled thickness of the deposition entity. The distance between the electrodes and voltage applied can be controlled to provide migration of the deposition entity. The method and system provide controlled immobilization of deposition entities such as proteins, enzymes, light harvesting complexes, DNA, RNA, PNA onto a substrate without loss of function. In one embodiment, the system can be used on a nanoscale. Additionally, devices can be formed by the method of the present invention.
Description
Background of invention
1. invention field
The present invention relates to be used for the method and apparatus of the galvanic deposit of controlled entity, described entity such as biomolecules, wherein, described entity is provided near the electrode pair that concerns in an overlapping, and between described electrode, apply voltage, this voltage is enough to cause described biomolecules composition to move to one of described electrode, and causes the individual layer of the described entity of deposition on described electrode.The invention still further relates to the method for using immobilized entity, and the device that has adopted described immobilized entity.
2. correlation technique
Disclosed already and be used for by chemical part the ordinary method of proteopexy on matrix.U.S. Patent number 6,475,809 have disclosed the protein arrays that is used for format high throughput screening, wherein, a plurality of different parts are fixed on the surface of matrix.An individual layer is provided on the surface of described matrix.With described proteopexy on described individual layer.Described individual layer is by the number of chemical part, comprises the alkylsiloxane individual layer, and alkyl sulfhydryl/dialkyl disulphides individual layer and alkyl individual layer are formed on them on the oxide-free silicon matrix.
U.S. Patent number 4,294,677 have disclosed a kind of being used for deposits to albumen on the ion-exchange membrane from be dissolved or dispersed in suspension liquid wherein by the proteic method of electrophoresis galvanic deposit.Described ion-exchange membrane can comprise the polymer backbone of chemical elasticity height bridge joint, has connected a lot of negatively charged ion and cation exchange group on it, as sulfonic acid group, and hydroxy-acid group, phenolic groups and ammonium group are as substituting group.
Other ordinary methods of not using chemical part albumen to be carried out galvanic deposit had been disclosed already.
U.S. Patent number 5,166,063 has disclosed and is used for molecule is fixed on the conductive matrices so that produce the method for biosensor.Biological sensor electrode and counter electrode are immersed in the container of at least a biomolecule solution.Formation is lower than 1 volt potential difference between described electrode, and the defective of this patent is owing to used bigger volume in this system, therefore to be difficult to be controlled at the quantity of the biomolecules of accumulating on the biological sensor electrode.
Need be provided for the method and system of the galvanic deposit of controlled entity.
Summary of the invention
The present invention relates to be used to control the method and system of the galvanic deposit that deposits entity, wherein, between a pair of eclipsed electrode, provide the solution or the suspension of described deposition entity with predetermined concentration.To described electrode application voltage, this voltage is enough to cause described deposition entity to move to one of described electrode, and deposits the deposition entity of controlled thickness.Described distance between electrodes and the voltage that is applied can be controlled, so that the motion of described deposition entity is provided.Described method and system provides will be such as albumen, enzyme, and light harvesting complex, DNA, RNA is fixed on the matrix to the deposition entity control of PNA, and don't can loses its function.In one embodiment, described system can use on nano level.In addition, can be by method production equipment of the present invention.By with reference to the following drawings the present invention being described better
Brief description of drawings
Fig. 1 is used for the schematic cross sectional views that the method according to this invention is controlled the system of the galvanic deposit that deposits entity.
Fig. 2 is the top view with the fixed housing of the system shown in Figure 1 of combination of electrodes.
Fig. 3 A is the absorption spectrum curve figure by the deposit film of the deposition entity of device production of the present invention.
Fig. 3 B is the SEM Photomicrograph of film shown in Fig. 3 A.
Describe in detail
Now in more detail referring to the preferred embodiments of the invention.Its a kind of example shown in the drawings.If possible, in drawing and description, can use identical Reference numeral to represent same or analogous parts.
Fig. 1 is the synoptic diagram that is used for controlling according to explanation of the present invention the system 10 of the galvanic deposit that deposits entity.System 10 comprises electrode 12 and electrode 14.Electrode 12 and electrode 14 relation in an overlapping.
One or more in electrode 12 and the electrode 14 can be transparent.In this article, when described layer allowed the environment electromagnetics radiating at least 50% of relevant wavelength to transmit by described layer, it was " transparent " that this layer material just is said to be.Similarly, allow to be lower than that layer that the environment electromagnetics radiation of 50% relevant wavelength passes through is said to be is " semi-transparent ".Specifically, ITO is the sex change n+ semi-conductor of high doped, and its optical energy band crack is about 3.2eV, makes that it is transparent for the radiation that wavelength surpasses about 3900 .Another kind of suitable metal substitute materials be transparent electric conductive polymer polyaniline (polyanaline) (PANI), and its chemofacies related substance.
The metal surrogate can also be selected from multiple non-metallic material, and wherein, term " nonmetal " expression comprises multiple material, as long as described material does not contain metal in its chemically unconjugated form.When metal when combining form does not exist with alloy form separately or with one or more other metals with its chemistry, it b referred to as, and form with its metal or " free metal " exists.Therefore, metal surrogate electrode of the present invention can be known as " no metal " sometimes, and wherein, term " no metal " is specifically designed to expression and comprises and do not contain chemically the not material of the metal of chemical combination form.The free metal has a kind of melts combine that is considered to the Chemical bond type form usually, and this has caused forming the valence electron that can freely move in a large number in spreading all over the electronic conduction band of metal lattice.Although the metal surrogate can comprise metal ingredient,, they are " nonmetallic " on some kinds of bases.They are not pure free metals, alloy that neither the free metal.When metal existed with their metallic forms, described electronic conduction band tended to provide high conductivity except other metallic characters, and to the highly reflective of optical radiation.
Electrode 12 can be connected on the matrix 15, and electrode 14 can be connected on the matrix 16.For example, adopt known metal and nonmetal deposition technique, as electron beam evaporation etc., electrode 12 and electrode 14 can be used as thin film deposition on corresponding matrix 15 and matrix 16.
Matrix 15 and 16 can be organic or inorganic, and is biological or abiological, or the arbitrary combination of above-mentioned materials.In one embodiment, described matrix is transparent or translucent.Matrix 15 and 16 can be flat, fixed or semifixed.The suitable material that is used for matrix 15 and 16 comprises silicon, silicon-dioxide, quartz, glass, the glass of controlled cell size, carbon, aluminum oxide, titanium dioxide, germanium, silicon nitride, zeolite, and gallium arsenide.Such as gold, platinum, aluminum-copper alloy, titanium, and the metal of their alloy also can be selected as described matrix.In addition, a lot of potteries and polymkeric substance can also be used as matrix.The polymkeric substance that can be used as matrix includes, but are not limited to following material: polystyrene; Poly-(four) vinyl fluoride; (gathering) vinylidene fluoride; Polycarbonate; Polymethylmethacrylate; Polyvinyl ethene; Polymine; Poly (etherether) ketone; Polyoxymethylene (POM); Polyvinyl phenol; Polylactide; Polymethacrylimide (PMI); Polyene hydrocarbon sulfones (PAS); Poly-hydroxyethyl methacrylate (polyhydroxyethylmethacrylate); Polydimethylsiloxane; Polyacrylamide; Polyimide; Its polymers of its block; With Eupergit , photo-resist, polymeric Langmuir-Blodgett film and LIGA structure also can be used as matrix of the present invention.
Power supply 18 is provided, and it has the positive wire 19 that is connected with electrode 12, with the negative wire 20 that is connected with electrode 14, so that provide stable substantially electric current between electrode 12 and electrode 14.If desired,, make lead-in wire 19 electronegative, make to go between 20 positively chargedly, can put upside down sense of current by switched lead 19 and lead-in wire 20 and being connected of power supply 18.
Distance D 1 between electrode 12 and the electrode 14 can be about about 5.0mm of 10nm-.In one embodiment, select distance D 1 and size between electrode 12 and the electrode 14, so that can on nanoscale device, use.Deposition on the nano level electrode can be carried out, as long as the rest part of matrix is an insulating.Suitable distance D 1 is about 1.0mm.The voltage that is applied on electrode 12 and the electrode 14 depends on distance D 1.For example, the voltage that is applied can be about 1 at about 1V/cm-, in the scope of 000V/cm.The distance that the suitable voltage range of about about 200V/cm of 10V/cm-can be used between electrode 12 and the electrode 14 is under the situation of about 1mm.
The solution or the suspension of deposition entity 22 are provided between electrode 12 and 14.Apply the voltage preset time continuously, so that realize that deposition entity 22 to the moving of electrode 12 or 14, makes deposition entity 22 deposit film on electrode 12 or electrode 14.For example, voltage can apply about 5 minutes-about 48 hours continuously.The voltage that is applied is based on the thickness of the film of the deposition entity 22 that needs, and based on depositing the therefrom concentration of the solution of galvanic deposit of entity 22.Have found that, it is desirable between electrode 12 and 14 to use minimum distance,, provide the moving of necessity of deposition entity 22 so that reduce voltage.
To the concentration of deposition entity in deposition solution of entity 22 or the suspension, and the volume of this solution selects, so that be controlled at when applying predetermined voltage continuously the thickness of the film of sedimentary deposition entity 22 on electrode 12 or electrode 14.For example, can select to deposit the concentration of deposition entity in the solution of entity 22 or the suspension, so that on electrode 12 or electrode 14, form individual layer.In one embodiment of the present invention, 100% deposition entity can be deposited on electrode 12 or the electrode 14, the concentration of the deposition entity of use is the about 1mg/ml of about 10 μ g/ml-, and volume is about 1mm
3-about 100mm
3, voltage is the about 200V/cm of about 10V/cm-, having formed thickness is the single thin film of the about 10nm of about 5nm-.Be understandable that, can deposit thicker film by the concentration of deposition entity 22 and the volume of solution in change solution or the suspension.
The solution or the suspension that can utilize fixed housing 24 will deposit entity 22 are limited between electrode 12 and the electrode 14.Fixed housing 24 is to install near electrode 12 and electrode 14.Referring to Fig. 2, fixed housing 24 can have open end, encircles as O-shape.Perhaps, fixed housing 24 can have different shape.Fixed housing 24 can have specific size, so that the solution or the suspension of the deposition entity 22 of pre-determined volume are provided.For example, fixed housing 24 can have provides about 1mm
3-about 100mm
3The size of volume.
In one embodiment, fixed housing 24 can be placed on an electrode, for example, and on the electrode 14.Then, solution or the suspension that deposits entity 22 is contained in the fixed housing 24, and contacts electrode 14.The solution of deposition entity 22 or the volume of suspension are filled fixed housing 24.With another electrode, for example, electrode 12 is placed on the top of fixed housing 24, is limited between electrode 12 and the electrode 14 so that will deposit entity 22.For example, the matrix with fixed housing 24 can use 10
5Mm
3300mm silicon chip on the rank is so that cover whole matrix with the sedimentation unit thickness of about 1mm.
The deposition entity is performed such towards electrode 12 or 14 mobile, electrode with the solution of electric charge and deposition entity 22 or suspension in the opposite charge of deposition entity.When electrode 12 or electrode 14 moved, deposition entity 22 can be combined on electrode 12 or 14 at deposition entity 22, and this is because the Van der Waals between deposition entity and electrode 12 or the electrode 14 interacts on a lot of degree.
Described deposition entity is fit to be deposited on electrode 12 or 14.Suitable deposition entity include, but are not limited to following type naturally occurring or synthetic molecule or can be used as the group of molecules that the composition of biology system exists: albumen comprises simple albumen and contains the albumen of the complexity of other organic compound, for example, apoprotein, glycoprotein, peptide, oligopeptides, lipoprotein, ovum-albumen, breast-albumen, serum-albumen, flesh-albumen, seed-albumen, scleroprotein, chromoprotein, phosphorprotein and nucleoprotein.Other suitable deposition entities comprise antigen and its antibody, antibody fragment, haptens and its antibody, acceptor and other membranins, the albumen analogue, wherein, at least a non-peptide bond has replaced peptide bond, enzyme and enzyme precursor, coenzyme, enzyme inhibitors, amino acid and derivative thereof, hormone, lipid, phosphatide, glycolipid, liposome, Nucleotide, oligonucleotide, polynucleotide, and their artificial congnition with biological function analogue and derivative, comprise, for example: methylated polynucleotide and nucleotide analog: plasmid, clay with sulphur phosphinylidyne key, artificial chromosome, other nucleic acid carriers; Antisense polynucleotides, comprise the polynucleotide that are complementary at least a endogenous nucleic acid substantially, or the opposite polynucleotide of at least a portion sequence with sequence and specific virus or reverse transcription virus gene group, virus, phage, antisense and any other biologically active molecules, synthetic mixture, macromole or synthetic polymer.Suitable deposition entity 22 also comprises thymus nucleic acid (DNA), Yeast Nucleic Acid (RNA) and peptide nucleic acid(PNA) (PNA).
Deposition entity 22 can comprise light harvesting complex.Term " light harvesting complex " (LHC) is used to represent photosynthetic complex body in this article, for example, and PSI (for example, photosystem I is from spinach), PS2 (photosystem II), LH1 (light harvesting complex 1) and/or LH2 (light harvesting complex 2 is from purple bacteria).Fromme, P., etc., Biochim.Biophys.Acta1365,175 (1998); Lee, I., etc., Phys.Rev.Lett.79,3294 (1997); Schubert, W.D., etc., J.Mol.Biol.272,741-768 (1997).Above-mentioned complex body can obtain by the commercial channel, for example, buys 1425Russ Blvd., Suite T-107C, San Diego, CA92101 from PROTEIN LABS company.In system 10, have weak under the dominant condition or do not have polarity or the above-mentioned any deposition entity of derivable polar, can be covalently bound with suitable charged carrier, so that form the charged complex body that can be deposited on electrode 12 or 14.
According to the composition of described liquid, use any technology in this area, the above-mentioned type can be deposited the member of entity and the arbitrary combination of their special member and place solution or suspension, form the colloidal solid that is present in the liquid.The solution or the suspension of deposition entity 22 can be the aqueous solution, as physiological saline, can conduct most of electric current.Described solution or suspension can have the ideal pH that is on the physiology level.Can control the solution of auto-deposition entity 22 or deposition the entity deposition direction on electrode 12 and 14, movement velocity and sedimentation velocity in the suspension with very high sensitivity by the pH of suitable regulator solution.This control is based on, and can be applicable to the use of the conventional electrophoretic technique of permanent electrically charged composition, and it gives the net charge of the deposition entity in the solution according to the pH of solution.Can make the deposition entity have zero net negative charge, and the pH that therefore it can not moved under electric field effects is defined as its iso-electric point.Under the pH value greater than iso-electric point, described molecule has net negative charge; On the contrary, be lower than under the pH value of iso-electric point, described molecule has clean positive charge.Therefore, in system shown in Figure 1 10, the solution of deposition entity 22 or the pH of suspension are regulated, made it be higher or lower than the iso-electric point of the deposition entity that will be deposited on electrode 12 or 14.As required, this adjustment can be finished by using known acid or alkali preparation.Can also be as required with other additives, as described in adding to as nonionogenic tenside and defoamer or stain remover in the solution.
Immobilized deposition entity according to method and system production of the present invention can be used for comprising galvanometric electrochemica biological sensor in the multiple molecular detection system, calorimetric, acoustics, voltage determination method, optical and ISFET type biosensor.
Can be with such as albumen, enzyme, antibody or glycoprotein are used on the biosensor as the immobilized entity of lectin, and described transmitter can detect the existence of specific physiology molecule or its concentration by the interaction between physiology part and the described immobilized biomolecules.
It is in essential any device to the work of device that immobilized entity can be used in immobilized entity.Suitable device comprises solid-state device, storing device and optoelectronic equipment.
Fig. 3 A represents to be deposited on the absorption spectrum of the LH2 film on the electrode.Electrode pair has the interelectrode distance of about 1mm.At room temperature applied about 50 volts voltage 24 hours.Apparent peak has appearred in described absorption spectrum under the wavelength of 800nm and 850nm, shown that described complex body is complete (blue shift can take place in the absorption of unconjugated pigment molecular).
Fig. 3 B is the SEM Photomicrograph of gained film.The structure of 10nm-15nm size is interested complex body.
Should be understood that above-mentioned embodiment is an example only can represent in the multiple feasible specific embodiments of the application of the principles of the present invention a few.Under the prerequisite that does not deviate from design of the present invention and scope, those skilled in the art can design multiple other different structures easily according to principle of the present invention.
Claims
(according to the modification of the 19th of treaty)
1. be used to control the method for the galvanic deposit that deposits entity, may further comprise the steps:
The solution or the suspension of the described deposition entity of preparation predetermined concentration;
Described solution is provided near the place between the pair of electrodes described two electrodes relation in an overlapping, predetermined at interval each other distance; With
Apply predetermined voltage between described two electrodes, this voltage is enough to cause that described deposition entity moves to one of described electrode, and described deposition entity is deposited on described electrode one of described.
2. method as claimed in claim 1, wherein, described deposition entity predetermined concentration is the about 1mg/ml of about 10 μ g/ml-, the volume of described solution is about 1mm
3-about 100mm
3
3. method as claimed in claim 2, wherein, described two distance between electrodes are the about 5.0mm of about 10nm-.
4. method as claimed in claim 3, wherein, described predetermined voltage is that about 1V/cm-is about 1,000V/cm.
5. method as claimed in claim 1 wherein, is deposited on the described deposition entity of individual layer on described electrode one of described.
6. method as claimed in claim 1 wherein, is that the described deposition entity of one deck of the about 10nm of about 5nm-is deposited on described electrode one of described with thickness.
7. method as claimed in claim 1, wherein, described deposition entity is selected from following one group: albumen, peptide, enzyme, enzyme substrates, cofactor, medicine, lectin, sugar, oligonucleotide, DNA, RNA, PNA, virus, phage, antisense, antigen, haptens, antibody, amino acid and derivative thereof, hormone, lipid, phosphatide, glycolipid, liposome, Nucleotide and light harvesting complex.
8. method as claimed in claim 1, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
9. method as claimed in claim 1, wherein, one of described electrode is transparent, and described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
10. method as claimed in claim 1, wherein, described solution is provided in the fixed housing between described two electrodes.
11. pass through the device that the method for claim 1 is produced.
12. as the device of claim 11, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2, and described device is solid-state light-sensitive unit.
13. as the device of claim 12, wherein, described device is an optoelectronic equipment.
14. as the device of claim 11, wherein, described device is a biosensor.
15. as the device of claim 11, wherein, described device is a storing device.
16. a device that is used to deposit the galvanic deposit of entity comprises:
Two electrodes that concern in an overlapping;
Stationary installation between described two electrodes is used to hold the solution or the suspension of described deposition entity;
Be used for applying between described two electrodes the device of voltage, the voltage that is applied is enough to cause described deposition entity to move to one of described two electrodes, and described deposition entity is deposited on described two electrodes one of described.
17. as the device of claim 16, wherein, the predetermined concentration of described deposition entity is the about 1mg/ml of about 10 μ g/ml-, and the volume of described solution is about 1mm
3-about 100mm
3
18. as the device of claim 16, wherein, described two distance between electrodes are the about 5.0mm of about 10nm-.
19. as the device of claim 16, wherein, described predetermined voltage is that about 1V/cm-is about 1,000V/cm.
20., wherein, the described deposition entity of individual layer is deposited on described electrode one of described as the device of claim 16.
21., wherein, be that the described deposition entity of one deck of the about 10nm of about 5nm-is deposited on described electrode one of described with thickness as the device of claim 16.
22. as the device of claim 16, wherein, described deposition entity is selected from following one group: albumen, peptide, enzyme, enzyme substrates, cofactor, medicine, lectin, sugar, oligonucleotide, DNA, RNA, PNA, virus, phage, antisense, antigen, haptens, antibody, amino acid and derivative thereof, hormone, lipid, phosphatide, glycolipid, liposome, Nucleotide and light harvesting complex.
23. as the device of claim 16, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
24. as the device of claim 16, wherein, one of described electrode is transparent, and described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
Claims (24)
1. be used to control the method for the galvanic deposit that deposits entity, may further comprise the steps:
The solution or the suspension of the described deposition entity of preparation predetermined concentration;
Described solution is provided near the place between the electrode pair described electrode pair relation in an overlapping, predetermined at interval each other distance; With
Apply predetermined voltage between described two electrodes, this voltage is enough to cause that described deposition entity moves to one of described electrode, and described deposition entity is deposited on one of described electrode.
2. method as claimed in claim 1, wherein, described sedimentary predetermined concentration is the about 1mg/ml of about 10 μ g/ml-, the volume of described solution is about 1mm
3-about 100mm
3
3. method as claimed in claim 2, wherein, the distance between the described electrode pair is the about 5.0mm of about 10nm-.
4. method as claimed in claim 3, wherein, described predetermined voltage is that about 1V/cm-is about 1,000V/cm.
5. method as claimed in claim 1, wherein, with the monolayer deposition of described deposition entity on one of described electrode.
6. method as claimed in claim 1 wherein, is being deposited upon on one of described electrode of described deposition entity of the about 10nm of about 5nm-with thickness.
7. method as claimed in claim 1, wherein, described deposition entity is selected from following one group: albumen, peptide, enzyme, enzyme substrates, cofactor, medicine, lectin, sugar, oligonucleotide, DNA, RNA, PNA, virus, phage, antisense, antigen, haptens, antibody, amino acid and derivative thereof, hormone, lipid, phosphatide, glycolipid, liposome, Nucleotide and light harvesting complex.
8. method as claimed in claim 1, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
9. method as claimed in claim 1, wherein, one of described electrode is transparent, and described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
10. method as claimed in claim 1, wherein, described solution is provided in the fixed housing between described electrode pair.
11. pass through the device that the method for claim 1 is produced.
12. as the device of claim 11, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2, and described device is solid-state light-sensitive unit.
13. as the device of claim 12, wherein, described device is an optoelectronic equipment.
14. as the device of claim 11, wherein, described device is a biosensor.
15. as the device of claim 11, wherein, described device is a storing device.
16. a device that is used to deposit the galvanic deposit of entity comprises:
Two electrodes that concern in an overlapping;
Stationary installation between described two electrodes is used to hold the solution or the suspension of described deposition entity;
Be used for applying between described two electrodes the device of voltage, the voltage that is applied is enough to cause described deposition entity to move to one of described two electrodes, and described deposition entity is deposited on one of described two electrodes.
17. as the device of claim 16, wherein, described sedimentary predetermined concentration is the about 1mg/ml of about 10 μ g/ml-, and the volume of described solution is about 1mm
3-about 100mm
3
18. as the device of claim 16, wherein, the distance between the described electrode pair is the about 5.0mm of about 10nm-.
19. as the device of claim 16, wherein, described predetermined voltage is that about 1V/cm-is about 1,000V/cm.
20. as the device of claim 16, wherein, with the monolayer deposition of described deposition entity on one of described electrode.
21., wherein, be being deposited upon on one of described electrode of described deposition entity of the about 10nm of about 5nm-with thickness as the device of claim 16.
22. as the device of claim 16, wherein, described deposition entity is selected from following one group: albumen, peptide, enzyme, enzyme substrates, cofactor, medicine, lectin, sugar, oligonucleotide, DNA, RNA, PNA, virus, phage, antisense, antigen, haptens, antibody, amino acid and derivative thereof, hormone, lipid, phosphatide, glycolipid, liposome, Nucleotide and light harvesting complex.
23. as the device of claim 16, wherein, described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex I and light harvesting complex 2.
24. as the device of claim 16, wherein, one of described electrode is transparent, and described deposition entity is selected from following one group: albumen, photosystem I, photosystem II, light harvesting complex 1 and light harvesting complex 2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/722,740 US20050109622A1 (en) | 2003-11-26 | 2003-11-26 | Method for controlling electrodeposition of an entity and devices incorporating the immobilized entity |
| US10/722,740 | 2003-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1902340A true CN1902340A (en) | 2007-01-24 |
Family
ID=34592054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800391550A Pending CN1902340A (en) | 2003-11-26 | 2004-11-24 | Method for controlling electrodeposition of an entity and devices incorporating the immobilized entity |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20050109622A1 (en) |
| EP (1) | EP1706521A2 (en) |
| JP (1) | JP2007512439A (en) |
| KR (1) | KR20060096463A (en) |
| CN (1) | CN1902340A (en) |
| AU (1) | AU2004294552A1 (en) |
| BR (1) | BRPI0416429A (en) |
| CA (1) | CA2549835A1 (en) |
| MX (1) | MXPA06005996A (en) |
| TW (1) | TW200525151A (en) |
| WO (1) | WO2005054838A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018196241A1 (en) * | 2017-04-25 | 2018-11-01 | 广东工业大学 | Electrophoresis-assisted micro-nano particle melting self-assembly surface modification equipment |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050239184A1 (en) * | 2004-04-23 | 2005-10-27 | Reiko Ohara | Electric driven protein immobilizing module and method |
| WO2010119443A1 (en) * | 2009-04-13 | 2010-10-21 | Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. | Process for electrochemical coating of conductive surfaces by organic nanoparticles |
| US10092207B1 (en) | 2016-05-15 | 2018-10-09 | Biolinq, Inc. | Tissue-penetrating electrochemical sensor featuring a co-electrodeposited thin film comprised of polymer and bio-recognition element |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5569298A (en) * | 1978-11-17 | 1980-05-24 | Kureha Chem Ind Co Ltd | Electrodeposition method of protein |
| JP2600069B2 (en) * | 1985-09-14 | 1997-04-16 | 工業技術院長 | Light sensor |
| JPH0383999A (en) * | 1989-08-28 | 1991-04-09 | Hitachi Ltd | Preparation of oriented protein film, artificial structure comprising the same film and its use |
| US5107104A (en) * | 1989-10-18 | 1992-04-21 | Fuji Photo Film Co., Ltd. | Photoelectric transducer having photosensitive chromoprotein film, i.e. bacteriorhodopsin |
| US5166063A (en) * | 1990-06-29 | 1992-11-24 | Eli Lilly And Company | Immobolization of biomolecules by enhanced electrophoretic precipitation |
| US5346789A (en) * | 1991-12-06 | 1994-09-13 | Cornell Research Foundation, Inc. | Oriented biological material for optical information storage and processing |
| US5855753A (en) * | 1996-11-26 | 1999-01-05 | The Trustees Of Princeton University | Method for electrohydrodynamically assembling patterned colloidal structures |
| US6406921B1 (en) * | 1998-07-14 | 2002-06-18 | Zyomyx, Incorporated | Protein arrays for high-throughput screening |
| US6340421B1 (en) * | 2000-05-16 | 2002-01-22 | Minimed Inc. | Microelectrogravimetric method for plating a biosensor |
| JP4434013B2 (en) * | 2002-05-07 | 2010-03-17 | ユニバーシティ オブ サザン カリフォルニア | Method and apparatus for measuring the quality of a deposit during a plating process using conformable contact mask plating |
-
2003
- 2003-11-26 US US10/722,740 patent/US20050109622A1/en not_active Abandoned
-
2004
- 2004-11-24 EP EP04812067A patent/EP1706521A2/en not_active Withdrawn
- 2004-11-24 CN CNA2004800391550A patent/CN1902340A/en active Pending
- 2004-11-24 MX MXPA06005996A patent/MXPA06005996A/en unknown
- 2004-11-24 KR KR1020067012495A patent/KR20060096463A/en not_active Application Discontinuation
- 2004-11-24 WO PCT/US2004/039470 patent/WO2005054838A2/en active Application Filing
- 2004-11-24 AU AU2004294552A patent/AU2004294552A1/en not_active Abandoned
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- 2004-11-24 JP JP2006541690A patent/JP2007512439A/en active Pending
- 2004-11-24 BR BRPI0416429-6A patent/BRPI0416429A/en not_active IP Right Cessation
- 2004-11-25 TW TW093136320A patent/TW200525151A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018196241A1 (en) * | 2017-04-25 | 2018-11-01 | 广东工业大学 | Electrophoresis-assisted micro-nano particle melting self-assembly surface modification equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050109622A1 (en) | 2005-05-26 |
| JP2007512439A (en) | 2007-05-17 |
| WO2005054838A3 (en) | 2006-01-12 |
| KR20060096463A (en) | 2006-09-11 |
| MXPA06005996A (en) | 2006-08-23 |
| TW200525151A (en) | 2005-08-01 |
| BRPI0416429A (en) | 2007-02-21 |
| AU2004294552A1 (en) | 2005-06-16 |
| CA2549835A1 (en) | 2005-06-16 |
| EP1706521A2 (en) | 2006-10-04 |
| WO2005054838A2 (en) | 2005-06-16 |
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