CN1901088A - Magnetic random access storage based on closed magnetic multilayer film and control method - Google Patents

Abstract

The present invention relates to a kind of magnetic random access memory (MRAM) based on closed ring multilayer magnetic film, and the MRAM adopts closed ring multilayer magnetic film with or without metal core as the memory unit. The MRAM realizes the write/read operation by means of changing the magnitude and direction of current flowing through the memory unit; or realizes write-in operation via applying current to the metal core and realizes the read-out operation via applying tunneling current to the ring multilayer magnetic film in the memory unit. Compared with available technology, the MRAM of the present invention has the advantages of simple control, simple structure, simple manufacture, low cost and raised application value.

Description

Magnetic RAM and control method based on closed magnetic multilayer film

Technical field

The present invention relates to a kind of magnetic RAM (MRAM) based on closed magnetic multilayer film, and control method

Background technology

From people such as phase late 1980s Baibich in the magnetoresistance effect system first observed to giant magnetoresistance effect (Giant Magneto Resistance, GMR) since, the research of magnetoresistance effect system is a problem of scientific research personnel's common concern always.Because the GMR effect has very high magneto-resistor ratio, therefore can be widely applied to fields such as magnetoelectricity resistance type sensor, magnetic recording playback head.That the device made from GMR not only has is highly sensitive, volume is little, good characteristics such as low in energy consumption, can also bring many new features such as radioresistance, non-volatile information storage.Particularly the GMR effect is used for the magnetic recording playback head and has brought a deepgoing revolution then for whole information record field, and related industry has been produced directly and far-reaching influence.IBM Corporation utilized the GMR effect successfully to develop the hard disc playback head in 1994, and the recording density of disk storage system has been improved nearly 20 times, made computer industry obtain breakthrough; The various kinds of sensors part of making based on the GMR effect then makes designs greatly simplify owing to output signal strengthens, and this has directly caused miniaturization of devices and cheap.

After the GMR effect is found, nineteen ninety-five Japan scientist T.Miyazaki and U.S. scientist J.S.Moodera have independently obtained under the room temperature 18% and 10% tunnel magneto resistance (TunnelingMagneto Resistance respectively in MTJ (MTJ), TMR) ratio, thus started the research climax of MTJ.The researchist is based on GMR effect and MTJ and designed a kind of novel magnetic random access memory (Magnetic RandomAccess Memory, MRAM) device model, this device is owing to having adopted brand-new design to have many breathtaking new features, such as radioresistance, non-volatile information storage etc.Typical MRAM core structure is made of four parts: bit line (Bit Line), write word line (Word Line), readout word line (Read Line) and storage unit.Bit line and write word line, readout word line lay respectively at the above and below of storage unit, are cross arrangement in length and breadth, and storage unit then is positioned at the infall of bit line and word line.MRAM read-write process is then finished by word line and bit line current acting in conjunction, the magnetized state of storage unit is controlled in the magnetic field that this working method significantly depends on word line and bit line current and produced, structure and technology are very complicated, give the processing of device and have integratedly brought great inconvenience.

1996, U.S. scientist J.Slonczewski has foretold a kind of new physical mechanism-spinning moment (Spin Torque theoretically, ST) effect, this physical mechanism can utilize electric current self to realize that the electric current that flows through is less than certain specific critical value I to the controlling of storage unit magnetized state in storage unit _CThe time, the storage unit magnetized state can not be stored the electric current that flows through in the unit and change, thereby can realize read operation; And the electric current that flows through in storage unit is greater than this critical value I _CThe time, the storage unit magnetized state will be determined by the sense of current that flows through in the storage unit, thereby can be realized write operation.In the more than ten years subsequently, scientists has been carried out a large amount of extensive and deep researchs to this new effect.If this new mechanism is applied in the devices such as magnetoresistance effect system and MRAM, then can greatly simplify device architecture and processing technology, this will bring revolutionary breakthrough again for area information storage.

In the prior art among the MRAM device stores unit that generally uses and the applicant's the CN1564260 of patented claim formerly in the disclosed MRAM device, the storage unit of using-as bit-level (soft magnetosphere or free soft magnetosphere) and other pinned magnetosphere (or hard magnetic layer)-geometry all adopt non-closing structure, as rectangle, ellipse etc., this structure will be brought bigger demagnetizing field and shape anisotropy under high density small size storage unit, this defective can increase the adverse field and the power consumption of bit-level (soft magnetosphere or free soft magnetosphere) undoubtedly, simultaneously under high-density state the magnetic coupling between the magnetic recording unit with mutual interference is inevitable mutually, homogeneity and consistance to the magnetic electricity performance of storage unit are also brought many adverse influences, and give the design of storage unit and preparation brings on many structures and technological process in complicacy.

Summary of the invention

When the objective of the invention is to overcome magnetoresistance effect that existing magnetic RAM uses non-closing structure as storage unit, because the demagnetizing field of non-closing structure storage unit and the influence of shape anisotropy, and under high-density state, there are magnetic coupling and mutual interference mutually between the magnetic recording unit, make some technical difficulties and the defective that MRAM produces on reading/writing method, thereby provide a kind of based on closed magnetic multilayer film, can eliminate the demagnetizing field of storage unit, weaken the magnetic RAM of its shape anisotropy and interaction and interference, and control method.

The objective of the invention is to realize by the following technical solutions:

Magnetic RAM based on closed magnetic multilayer film provided by the invention is characterized in that: the magnetoresistance effect that uses closed magnetic multilayer film or closed form containing metal core is as storage unit.

Described closed magnetic multilayer film separate case is applied for a patent, it comprises each layer of conventional magnetoresistance effect, and the xsect of this magnetoresistance effect is closed straight-flanked ring or elliptical ring, wherein the width of ring is 10～100000nm in the rectangle, the width of rectangle outer shroud is 20～200000nm, and the width of ring and the ratio of length are 1: 1～5 in the rectangle; The minor axis of ring is 10～100000nm in oval, and the ratio of minor axis and major axis is 1: 1.1～5, and the minor axis of oval outer shroud is 20～200000nm.

The magnetoresistance effect of described closed form containing metal core separate case is applied for a patent, it comprises each layer of conventional magnetoresistance effect, one of also comprising the geometric center position that is positioned at this ring-type multilayer film is metal-cored, the xsect of this magnetoresistance effect is closed straight-flanked ring or elliptical ring, wherein the width of ring is 10～100000nm in the rectangle, the width of rectangle outer shroud is 20～200000nm, and the width of ring and the ratio of length are 1: 1～5 in the rectangle; The minor axis of ring is 10～100000nm in oval, and the ratio of minor axis and major axis is 1: 1.1～5, and the minor axis of oval outer shroud is 20～200000nm; One of also comprising the geometric center position that is positioned at this closed hoop multilayer film is metal-cored, and this metal-cored xsect is rectangle or ellipse, and wherein, the width of rectangle is 5～50000nm, and the ratio of width and length is 1: 1～5; Oval-shaped minor axis is 5～50000nm, oval-shaped minor axis and major axis ratio are 1: 1.1～5, the shape of metal-cored shape and close-shaped magnetoresistance effect is complementary, and is rectangle if promptly straight-flanked ring is then metal-cored, if elliptical ring then metal-cored be oval.

Described metal-cored material is the less metal material of resistivity, preferred Au, Ag, Pt, Ta, W, Ti, Cu or Al etc.This metal-cored effect is to apply electric current from the outside, controls the magnetized state of magnetoresistance effect by the toroidal magnetic field that electric current produces, thereby can carry out the write operation of magnetoresistance effect storage unit more easily.

The closed magnetic multilayer film of storage unit or the magnetoresistance effect of closed form containing metal core of being used as of the present invention, according to the materials classification that forms, comprise no pinning type with pinning type.

For no pinning type, the core texture of its magnetoresistance effect comprise a substrate and on bottom buffering conductive layer, hard magnetic layer (hereinafter to be referred as HFM), middle layer (hereinafter to be referred as I1), soft magnetosphere (hereinafter to be referred as SFM) and the overlayer of deposition successively on the buffering conductive layer of described bottom.

Described substrate is various conventional backing materials, preferred Si substrate, SiC substrate or Si/SiO ₂Substrates etc., thickness are 0.3～1mm;

The composition material of described bottom buffering conductive layer is a metal material, preferred Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al, and thickness is 2～200nm;

The composition material of described hard magnetic layer HFM is the big material of giant magnetoresistance effect, as Co, and Fe, Ni, CoFe, NiFeCo, CoFeB, CoFeSiB etc., thickness are 2～20nm;

Described middle layer I1 is made of metal level or insulator barrier layer, wherein metal layer material such as Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC, insulator barrier layer material such as Al ₂O ₃, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in middle layer are 0.5～10nm;

The composition material of described soft magnetosphere SFM is the spin polarizability height, and the ferromagnetic material that coercive force is less comprises: Co, Fe, Ni or their metal alloy NiFe, CoFeSiB, NiFeSiB, or amorphous Co _100-x-yFe _xB _y(0＜x＜100,0＜y≤20), or Heusler alloy are as Co ₂MnSi, Co ₂Cr _0.6Fe _0.4Al; The preferred Co of soft magnetosphere material ₉₀Fe ₁₀, Co ₇₅Fe ₂₅, Co ₄₀Fe ₄₀B ₂₀, or Ni ₇₉Fe ₂₁The thickness of described soft magnetosphere is 1～20nm;

Described overlayer is to be difficult for oxidized and metal material that have big resistance, preferred Ta, Cu, Ru, Pt, Ag, Au, Cr etc., and thickness is 2～10nm, it is not oxidized to be used for protective material.

For pinning type, the core texture of its magnetoresistance effect comprise a substrate and on bottom buffering conductive layer, antiferromagnetic pinning layer (hereinafter to be referred as AFM), pinned magnetosphere (hereinafter to be referred as FM1), middle layer (hereinafter to be referred as I2), free soft magnetosphere (hereinafter to be referred as FM2) and the overlayer of deposition successively on the buffering conductive layer of described bottom.

Described substrate is various conventional backing materials, preferred Si substrate, SiC substrate or Si/SiO ₂Substrates etc., thickness are 0.3～1mm;

The composition material of described bottom buffering conductive layer is a metal material, preferred Ta, Ru, Cr, Au, Ag, Pt, Ta, W, Ti, Cu or Al, and thickness is 2～200nm;

The composition material of described antiferromagnetic pinning layer AFM is for having anti-ferromagnetic alloy, preferred IrMn, and FeMn, PtMn, or CrMn, thickness are 3～30nm;

The composition material of described pinned magnetosphere FM1 is the ferromagnetic metal that has than high spinning polarizability, as Fe, Co, Ni and alloy thereof, and preferred CoFe alloy, the NiFe alloy, amorphous CoFeB alloy, CoFeSiB etc., thickness are 2～20nm;

Described middle layer I2 is made of metal level or insulator barrier layer, wherein metal layer material such as Ti, Zn, ZnMn, Cr, Ru, Cu, V or TiC, insulator barrier layer material such as Al ₂O ₃, MgO, TiO, ZnO, (ZnMn) O, CrO, VO, or TiCO, the thickness in middle layer are 0.5～10nm;

The composition material of described free soft magnetosphere FM2 is the spin polarizability height, and the ferromagnetic material that coercive force is less comprises: Co, Fe, Ni or their metal alloy, or amorphous Co _100-x-yFe _xB _y(0＜x＜100,0＜y≤20), or NiFeSiB, or Heusler alloy are as Co ₂MnSi, Co ₂Cr _0.6Fe _0.4Al; The preferred Co of soft magnetosphere material ₉₀Fe ₁₀, Co ₇₅Fe ₂₅, Co ₄₀Fe ₄₀B ₂₀, or Ni ₇₉Fe ₂₁The thickness of described soft magnetosphere is 1～20nm;

Described overlayer is to be difficult for oxidized and metal material that have big resistance, preferred Ta, Cu, Ru, Pt, Ag, Au, Cr etc., and thickness is 2～10nm, it is not oxidized to be used for protective material.

Magnetoresistance effect core texture in the magnetoresistance effect of closed magnetic multilayer film that is used as storage unit of the present invention or closed form containing metal core also can be the MTJ of double potential barrier type, its core texture comprise a substrate and on bottom buffering conductive layer, the first antiferromagnetic pinning layer (hereinafter to be referred as AFM1) of deposition successively on the buffering conductive layer of described bottom, the first pinned magnetosphere (hereinafter to be referred as FM11), first middle layer (hereinafter to be referred as I21), free soft magnetosphere (hereinafter to be referred as FM2), second middle layer (hereinafter to be referred as I22), the second pinned magnetosphere (hereinafter to be referred as FM12), second antiferromagnetic pinning layer (hereinafter to be referred as AFM2) and the overlayer.

Magnetic RAM based on closed magnetic multilayer film provided by the invention comprises following several types:

1. the invention provides a kind of magnetic RAM, shown in Figure 1A, 1B, comprising based on closed magnetic multilayer film:

The memory read/write control module array that transistor T R unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate;

The memory cell array that closed magnetic multilayer film storage unit RML constitutes, wherein the geometry of storage unit is a closed magnetic multilayer film;

The transition metal layer that connects above-mentioned transistor T R unit and closed magnetic multilayer film storage unit RML;

And word line WL and bit line BL, described word line WL also is the grid of described transistor T R simultaneously, described bit line BL is arranged in the top of described closed magnetic multilayer film storage unit RML, vertical mutually with described word line WL, and directly be connected with described closed magnetic multilayer film storage unit RML.

According to the spinning moment effect of introducing in the background technology, the invention provides a kind of control method of above-mentioned magnetic RAM based on closed magnetic multilayer film, it is read operation and the write operation of realizing MRAM by the size and Orientation of the electric current among the storage unit RML that flows through, and is specific as follows:

Electric current in closed magnetic multilayer film storage unit RML is less than a specific low critical value I _C1(corresponding current density, J _C1=10～10 ²A/cm ², electric current=current density * closed magnetic multilayer film sectional area) time, the magnetized state of its bit-level (soft magnetosphere or free soft magnetosphere) can not changed, thereby realizes the read operation of MRAM;

Electric current in closed magnetic multilayer film storage unit RML is greater than this low critical value I _C1And less than high critical value I _C2(corresponding current density, J _C2=10 ²～10 ⁶A/cm ²Electric current=current density * closed magnetic multilayer film sectional area) time, sense of current will change the magnetized state of closed magnetic multilayer film storage unit RML bit-level (soft magnetosphere or free soft magnetosphere), by forward and negative sense spin polarization tunnelling current (i.e. the driving action in the belt magnetic field of inducing by the polarization tunnelling current and the synergy of spinning moment), the magnetized state of realizing its bit-level (soft magnetosphere or free soft magnetosphere) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current;

If write current surpasses high critical current value I _C2(promptly greater than behind this critical current), the original edge of pinned magnetosphere (or hard magnetic layer) magnetized state clockwise or orientation counterclockwise will be inverted, promptly can cause bit-level (soft magnetosphere or free soft magnetosphere) with pinned magnetosphere (or hard magnetic layer) thus be inverted together and produce identical magnetization orientation, so write current must be less than high critical current value I _C2Be that read current is less than low critical current I _C1, write current must be greater than low critical current I _C1And less than high critical current I _C2

2. the invention provides the magnetic RAM of another kind, shown in Fig. 2 A, 2B, comprising based on the magnetoresistance effect of closed form containing metal core:

The memory read/write control module array that transistor T R unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate;

The memory cell array that the magnetoresistance effect storage unit RML of closed form containing metal core constitutes, wherein the geometry of storage unit is a closed form containing metal core magnetoresistance effect;

The transition metal layer that connects the magnetoresistance effect storage unit RML of above-mentioned transistor T R unit and closed form containing metal core;

And word line WL and two bit lines BL1, BL2, described word line WL also is the grid of described transistor T R simultaneously, described two bit lines BL1, BL2 are arranged in the top of the magnetoresistance effect storage unit RML of described closed form containing metal core, bit line BL1 is vertical mutually with described word line WL, and directly be connected with the magnetoresistance effect storage unit RML of described closed form containing metal core, metal-cored among the magnetoresistance effect storage unit RML of bit line BL2 and described closed form containing metal core directly links to each other, and isolated mutually by a layer insulating and bit line BL1.

The invention provides the control method of the magnetic RAM of above-mentioned magnetoresistance effect based on closed form containing metal core, it is by the metal-cored electric current that applies among the storage unit RML being realized the write operation of MRAM, realize the read operation of MRAM by the tunnelling current that the closed magnetic multilayer film among the storage unit RML is applied, specific as follows:

The electric current that applies in the magnetoresistance effect of the magnetoresistance effect storage unit RML of closed form containing metal core is less than a specific low critical value I _C1(corresponding current density, J _C1=10～10 ²A/cm ², electric current=current density * closed magnetic multilayer film sectional area) time, the magnetized state of its bit-level (soft magnetosphere or free soft magnetosphere) can not changed, thereby realizes the read operation of MRAM;

Apply electric current in metal-cored in closed form containing metal core magnetoresistance effect storage unit RML, because the magnetic field that electric current produces distributes in the form of a ring, therefore can control the magnetized state of closed magnetic multilayer film easily, concrete grammar is: apply electric current greater than low critical value I in metal-cored among the closed form containing metal core magnetoresistance effect storage unit RML _C1And less than high critical value I _C2(corresponding current density, J _C2=10 ²～10 ⁶A/cm ²Electric current=current density * metal-cored sectional area) time, sense of current will change the magnetized state of closed magnetic multilayer film storage unit RML bit-level (soft magnetosphere or free soft magnetosphere), drive current by forward and negative sense produces clockwise or anticlockwise magnetic field, the magnetized state of realizing its bit-level (soft magnetosphere or free soft magnetosphere) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.

If write current surpasses high critical current value I _C2(promptly greater than behind this critical current), pinned magnetosphere (or hard magnetic layer) is original will to be inverted along magnetized state clockwise or orientation counterclockwise, promptly can cause bit-level (soft magnetosphere or free soft magnetosphere) with pinned magnetosphere (or hard magnetic layer) thus be inverted together and produce identical magnetization orientation, so write current must be less than high critical current value I _C2Be that read current is less than low critical current I _C1, write current must be greater than low critical current I _C1And less than high critical current I _C2

The data write operation of MRAM is to rely on the acting in conjunction in the magnetic field that write word line and bit line produced to control the magnetized state of storage unit bit-level in the prior art, and therefore needing two metal wiring layers on process structure arranges write word line and bit line respectively.And compared with prior art, magnetic RAM based on closed magnetic multilayer film provided by the invention, magnetoresistance effect geometry by adopting new ring-type is as storage unit, utilize belt magnetic field that the polarization tunnelling current self of positive and negative both direction produces or metal-cored in the toroidal magnetic field that produces of the drive current of positive and negative both direction, and in conjunction with spinning moment effect, carry out the data write operation, make that the control of MRAM is easier: utilize free torque effect to make the reading and writing operation of data finish by a bit lines; The toroidal magnetic field that utilizes metal-cored middle electric current to produce drives the bit-level magnetized state of closed magnetic multilayer film, and the geometric match of driving magnetic field space distribution and storage unit is better, therefore makes the driving of device be more prone to.These characteristics make the magnetic RAM based on closed magnetic multilayer film of the present invention avoid the adverse effect of bringing owing to the magnetic field space skewness, help the prolongation of the stable and device lifetime of device serviceability; Simultaneously owing to the magnetic RAM based on closed magnetic multilayer film of the present invention has been removed a write word line that is specifically designed to write operation in the prior art, greatly reduce the complicacy of traditional MRAM structure, the difficulty and the cost of manufacturing process, and overcome the shortcoming that exists in the prior art, improved the using value of MRAM.

Description of drawings

Figure 1A is the mram cell structural representation of embodiment 1 that the present invention is based on the magnetic RAM of closed form (comprising rectangular ring and oval ring-type) magnetoresistance effect;

Figure 1B is the mram cell sectional structure chart of embodiment 1 that the present invention is based on the magnetic RAM of closed form (comprising rectangular ring and oval ring-type) magnetoresistance effect;

Fig. 2 A is the mram cell structural representation that the present invention is based on the magnetic RAM embodiment 2 of field drives mode work closed form (comprising rectangular ring and oval ring-type) containing metal core magnetoresistance effect, that utilize metal-cored middle electric current generation;

Fig. 2 B is the mram cell sectional structure chart that the present invention is based on the magnetic RAM embodiment 2 of field drives mode work closed form (comprising rectangular ring and oval ring-type) containing metal core magnetoresistance effect, that utilize metal-cored middle electric current generation;

Wherein, the drain electrode of the source electrode of 0 transistor T R, 0a transistor T R, 0b transistor T R, the grid of 0c transistor T R, 1a, 1b, 1c, 1d, 1e, 1f, 1g are that each wiring layer, 2 word line WL1,3a and 3b in the mram cell are contact hole, 4a ground wire GND, 4b transition metal layer TM, 4c bit line BL1,4d bit line BL2,5 closed magnetic multilayer film storage unit RML, 6 metal-cored.

Fig. 3 A is the mram cell structural representation that the present invention is based on the magnetic RAM embodiment 3 of field drives mode work closed form (comprising rectangular ring and oval ring-type) containing metal core magnetoresistance effect, that utilize metal-cored middle electric current generation;

Fig. 3 B is the mram cell sectional structure chart that the present invention is based on the magnetic RAM embodiment 3 of field drives mode work closed form (comprising rectangular ring and oval ring-type) containing metal core magnetoresistance effect, that utilize metal-cored middle electric current generation;

Wherein, first of the source electrode of 0 transistor T R, 0a transistor T R, the 0b1 transistor T R drain electrode, second drain electrode of 0b2 transistor T R, the grid of 0c transistor T R, 1a, 1b, 1c, 1d, 1e, 1f are that each wiring layer, 2 word line WL1,3a, 3b, 3b1,3b2 in the mram cell are contact hole, 4a ground wire GND, 4b, 4b1,4b2 transition metal layer TM, 4c bit line BL1,5 closed magnetic multilayer film storage unit RML, 6 metal-cored, 7 word line WL2.

Embodiment

Embodiment 1,

Shown in Figure 1A, 1B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring, i.e. bit line BL1 (4c), word line WL1 (2) and ground wire GND (4a).

The structure of the magnetoresistance effect among this closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is at the thick SiO of 1mm ₂The thickness that deposits successively on the/Si substrate is the bottom buffering conductive layer Au of 2nm, thickness is hard magnetic layer (HFM) Co of 3nm, thickness is middle layer (I1) Cu of 1nm, thickness is soft magnetosphere (SFM) NiFe of 1nm and the overlayer Ru that thickness is 4nm, the conductive layer Au that thickness is 2nm, the preparation of closed form structure provides in the patent of separate case application in detail, the minor face insied width of straight-flanked ring is 500nm, the outer width of minor face is 800nm, long limit insied width is 500nm, width is 800nm outside the long limit, and the minor face of straight-flanked ring is 1: 1 with the ratio of long limit insied width.

This closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (1d) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5).

Shown in Figure 1B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has two-layer in mram cell, be bit line BL1 (4c) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b).

In the read-write operation of MRAM, according to the spinning moment effect of introducing in the background technology, the electric current in bit line BL1 (4c) is less than a low critical value I _C1(corresponding current density, J _C1=10 ²A/cm ², electric current=current density * closed magnetic multilayer film sectional area) time, the electric current among the bit line BL1 (4c) can not change the magnetized state of closed magnetic multilayer film storage unit RML (5), thereby realizes the read operation of MRAM; And the electric current in bit line BL1 (4c) is greater than this low critical value I _C1And less than high critical value I _C2(corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * closed magnetic multilayer film sectional area) time, sense of current among the bit line BL1 (4c) will determine the magnetized state of the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5), make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.The MRAM of Here it is present embodiment utilizes the principle of work of spinning moment effect mode.

Thus, with the unit shown in Figure 1A, the 1B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL1 (4c) then _C1Read current, then read current arrives ground wire GND (4a) by bit line BL1 (4c) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current, because the effect of spinning moment effect, the magnetized state of closed magnetic multilayer film storage unit RML (5) will be determined by the direction of write current, therefore when write current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), after contact hole (3a) arrives ground wire GND (4a), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 2,

Shown in Fig. 2 A, 2B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring of the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), bit line BL2 (4d), word line WL1 (2) and ground wire GND (4a).Closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL2 (4d) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), bit line BL1 (4c) is arranged in the top of bit line BL2 (4d), and parallel with bit line BL2 (4d), isolate by insulation course 1e between the two.

The structure of the magnetoresistance effect among this closed magnetic multilayer film storage unit RML (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Au of 2nm, thickness is (AFM) PtMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) Ni of 2nm ₇₉Fe ₂₁, thickness is middle layer (I2) TiO of 0.8nm, thickness is free soft magnetosphere (FM2) Ni of 1nm ₇₉Fe ₂₁With thickness be the overlayer Au of 2nm, the minor face insied width of straight-flanked ring is 500nm, the outer width of minor face is 800nm, long limit insied width is 500nm, the outer width in long limit is 800nm, the minor face of straight-flanked ring is 1: 1 with the ratio of length limit insied width.The metal-cored MC (6) that is arranged in the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is that the Al of rectangle is metal-cored for the cross section, rectangle minor face 300nm, minor face is 1: 1 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 2 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, 1g, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1f, bit line BL2 (4d) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL2 (4d) below and its upper electrode directly is connected with bit line BL2 (4d); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b) of bottom.

Thus, with the unit shown in Fig. 2 A, the 2B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL2 (4d) then _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current arrives ground wire GND (4a) by bit line BL2 (4d) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via source electrode (0a), the contact hole (3a) of the drain electrode (0b) of metal-cored MC (6), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 3,

Shown in Fig. 3 A, 3B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b, 4b1,4b2), contact hole (3a, 3b, 3b1,3b2) and one group of wiring of the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), word line WL1 (2), word line WL2 (7) and ground wire GND (4a).Closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (4c) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5).

The structure of the magnetoresistance effect among this closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Ta of 2nm, thickness is (AFM) IrMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) CoFeB of 2nm, thickness is middle layer (I2) Al of 0.8nm ₂O ₃, thickness is free soft magnetosphere (FM2) CoFeB of 1nm and the overlayer Ta that thickness is 2nm, the minor face insied width of straight-flanked ring is 1000nm, the outer width of minor face is 2000nm, long limit insied width is 1000nm, and width is 2000nm outside the long limit, and the minor face of straight-flanked ring is 1: 1 with the ratio of long limit insied width.The metal-cored MC (6) that is arranged in the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is that the Al of rectangle is metal-cored for the cross section, rectangle minor face 500nm, minor face is 1: 1 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 3 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1e, transition metal layer TM (4b) place layer 1c and ground wire GND (4a) and transition metal layer TM (4b1,4b2) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with first drain electrode (0b1) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b2) of bottom; Transistor T R (0) is made up of two workspaces, two shared same source electrodes in workspace (0a), the drain electrode of first workspace and secondary service area is respectively 0b1 and 0b2, and two workspace duties are separately controlled by the word line WL2 (7) and the given level of WL1 (2) that are arranged in the grid top respectively.

Thus, with the unit shown in Fig. 3 A, the 3B is example, in the addressing read operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state, derive a value less than low critical value I by selecteed bit line BL1 (4c) then by selecteed word line WL2 (7) _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1), first drain electrode (0b1) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) and arrive ground wire GND (4a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via second drain electrode (0b2), the source electrode (0a) of transistor T R (0), the contact hole (3a) of metal-cored MC (6), transition metal layer TM (4b2), contact hole (3b2), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 4,

Shown in Figure 1A, 1B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring, i.e. bit line BL1 (4c), word line WL1 (2) and ground wire GND (4a).

The structure of the magnetoresistance effect among this closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is at the thick SiO of 1mm ₂The thickness that deposits successively on the/Si substrate is the bottom buffering conductive layer Au of 2nm, thickness is hard magnetic layer (HFM) CoFe of 3nm, thickness is middle layer (I1) Cu of 1nm, thickness is soft magnetosphere (SFM) NiFe of 1nm and the overlayer Ru that thickness is 4nm, the conductive layer Au that thickness is 2nm, the preparation of closed form structure provides in the patent of separate case application in detail, the minor face insied width of straight-flanked ring is 500nm, the outer width of minor face is 800nm, long limit insied width is 2500nm, width is 2800nm outside the long limit, and the minor face of straight-flanked ring is 1: 5 with the ratio of long limit insied width.

This closed magnetic multilayer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (1d) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5).

Shown in Figure 1B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has two-layer in mram cell, be bit line BL1 (4c) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b).

In the read-write operation of MRAM, according to the spinning moment effect of introducing in the background technology, the electric current in bit line BL1 (4c) is less than a low critical value I _C1(corresponding current density, J _C1=10 ²A/cm ², electric current=current density * closed magnetic multilayer film sectional area) time, the electric current among the bit line BL1 (4c) can not change the magnetized state of closed magnetic multilayer film storage unit RML (5), thereby realizes the read operation of MRAM; And the electric current in bit line BL1 (4c) is greater than this low critical value I _C1And less than high critical value I _C2(corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * closed magnetic multilayer film sectional area) time, sense of current among the bit line BL1 (4c) will determine the magnetized state of the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5), make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.The MRAM of Here it is present embodiment utilizes the principle of work of spinning moment effect mode.

Thus, with the unit shown in Figure 1A, the 1B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL1 (4c) then _C1Read current, then read current arrives ground wire GND (4a) by bit line BL1 (4c) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current, because the effect of spinning moment effect, the magnetized state of closed magnetic multilayer film storage unit RML (5) will be determined by the direction of write current, therefore when write current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), after contact hole (3a) arrives ground wire GND (4a), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 5,

Shown in Fig. 2 A, 2B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring of the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), bit line BL2 (4d), word line WL1 (2) and ground wire GND (4a).Closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL2 (4d) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), bit line BL1 (4c) is arranged in the top of bit line BL2 (4d), and parallel with bit line BL2 (4d), isolate by insulation course 1e between the two.

The structure of the magnetoresistance effect among this closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Au of 2nm, thickness is (AFM) PtMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) Ni of 2nm ₇₉Fe ₂₁, thickness is middle layer (I2) TiO of 0.8nm, thickness is free soft magnetosphere (FM2) Ni of 1nm ₇₉Fe ₂₁With thickness be the overlayer Au of 2nm, the minor face insied width of straight-flanked ring is 500nm, the outer width of minor face is 800nm, long limit insied width is 2500nm, the outer width in long limit is 2800nm, the minor face of straight-flanked ring is 1: 5 with the ratio of length limit insied width.The metal-cored MC (6) that is arranged in the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is that the Al of rectangle is metal-cored for the cross section, rectangle minor face 300nm, minor face is 1: 5 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 2 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, 1g, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1f, bit line BL2 (4d) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL2 (4d) below and its upper electrode directly is connected with bit line BL2 (4d); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b) of bottom.

Thus, with the unit shown in Fig. 2 A, the 2B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL2 (4d) then _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current arrives ground wire GND (4a) by bit line BL2 (4d) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via source electrode (0a), the contact hole (3a) of the drain electrode (0b) of metal-cored MC (6), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 6,

Shown in Fig. 3 A, 3B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise a closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b, 4b1,4b2), contact hole (3a, 3b, 3b1,3b2) and one group of wiring of the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), word line WL1 (2), word line WL2 (7) and ground wire GND (4a).Closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (4c) is arranged in the top of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5).

The structure of the magnetoresistance effect among this closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Ta of 2nm, thickness is (AFM) IrMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) CoFeB of 2nm, thickness is middle layer (I2) Al of 0.8nm ₂O ₃, thickness is free soft magnetosphere (FM2) CoFeB of 1nm and the overlayer Ta that thickness is 2nm, the minor face insied width of straight-flanked ring is 1000nm, the outer width of minor face is 2000nm, long limit insied width is 5000nm, and width is 6000nm outside the long limit, and the minor face of straight-flanked ring is 1: 5 with the ratio of long limit insied width.The metal-cored MC (6) that is arranged in the geometric center of closed rectangular ring-shaped magnetic multi-layer film storage unit RML (5) is that the Al of rectangle is metal-cored for the cross section, rectangle minor face 300nm, minor face is 1: 5 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 3 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1e, transition metal layer TM (4b) place layer 1c and ground wire GND (4a) and transition metal layer TM (4b1,4b2) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with first drain electrode (0b1) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b2) of bottom; Transistor T R (0) is made up of two workspaces, two shared same source electrodes in workspace (0a), the drain electrode of first workspace and secondary service area is respectively 0b1 and 0b2, and two workspace duties are separately controlled by the word line WL2 (7) and the given level of WL1 (2) that are arranged in the grid top respectively.Thus, with the unit shown in Fig. 3 A, the 3B is example, in the addressing read operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state, derive a value less than low critical value I by selecteed bit line BL1 (4c) then by selecteed word line WL2 (7) _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1), first drain electrode (0b1) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) and arrive ground wire GND (4a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via second drain electrode (0b2), the source electrode (0a) of transistor T R (0), the contact hole (3a) of metal-cored MC (6), transition metal layer TM (4b2), contact hole (3b2), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 7,

Shown in Figure 1A, 1B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise the oval ring-shaped magnetic multi-layer film storage unit of a closure RML (5), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring, i.e. bit line BL1 (4c), word line WL1 (2) and ground wire GND (4a).

The structure of the magnetoresistance effect among the oval ring-shaped magnetic multi-layer film storage unit RML of this closure (5) is at the thick SiO of 1mm ₂The thickness that deposits successively on the/Si substrate is the bottom buffering conductive layer Au of 2nm, thickness is hard magnetic layer (HFM) CoFe of 5nm, thickness is middle layer (I1) Cu of 1nm, thickness is soft magnetosphere (SFM) NiFe of 1nm and the overlayer Ru that thickness is 4nm, the conductive layer Au that thickness is 2nm, the preparation of closed form structure provides in the patent of separate case application in detail, the minor axis internal diameter of elliptical ring is 500nm, the minor axis external diameter is 800nm, the major axis internal diameter is 2500nm, the major axis external diameter is 2800nm, and the ratio of the minor axis of elliptical ring and major axis internal diameter is 1: 5.

Oval ring-shaped magnetic multi-layer film storage unit RML (5) of this closure and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (1d) is arranged in the top of closed oval ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with closed magnetic multilayer film storage unit RML (5).

Shown in Figure 1B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has two-layer in mram cell, be bit line BL1 (4c) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b).

In the read-write operation of MRAM, according to the spinning moment effect of introducing in the background technology, the electric current in bit line BL1 (4c) is less than a low critical value I _C1(corresponding current density, J _C1=10 ²A/cm ², electric current=current density * closed magnetic multilayer film sectional area) time, the electric current among the bit line BL1 (4c) can not change the magnetized state of closed magnetic multilayer film storage unit RML (5), thereby realizes the read operation of MRAM; And the electric current in bit line BL1 (4c) is greater than this low critical value I _C1And less than high critical value I _C2(corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * closed magnetic multilayer film sectional area) time, sense of current among the bit line BL1 (4c) will determine the magnetized state of the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5), make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.The MRAM of Here it is present embodiment utilizes the principle of work of spinning moment effect mode.

Thus, with the unit shown in Figure 1A, the 1B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL1 (4c) then _C1Read current, then read current arrives ground wire GND (4a) by bit line BL1 (4c) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current, because the effect of spinning moment effect, the magnetized state of closed magnetic multilayer film storage unit RML (5) will be determined by the direction of write current, therefore when write current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), after contact hole (3a) arrives ground wire GND (4a), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 8,

Shown in Fig. 2 A, 2B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise the oval ring-shaped magnetic multi-layer film storage unit of a closure RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b), contact hole (3a, 3b) and one group of wiring of the geometric center of closed oval ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), bit line BL2 (4d), word line WL1 (2) and ground wire GND (4a).Closed oval ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL2 (4d) is arranged in the top of closed oval ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with the oval ring-shaped magnetic multi-layer film storage unit of closure RML (5), bit line BL1 (4c) is arranged in the top of bit line BL2 (4d), and parallel with bit line BL2 (4d), isolate by insulation course 1e between the two.

The structure of the magnetoresistance effect among the oval ring-shaped magnetic multi-layer film storage unit RML of this closure (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Au of 2nm, thickness is (AFM) PtMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) Ni of 2nm ₇₉Fe ₂₁, thickness is middle layer (I2) TiO of 0.8nm, thickness is free soft magnetosphere (FM2) Ni of 1nm ₇₉Fe ₂₁With thickness be the overlayer Au of 2nm, the minor axis internal diameter of elliptical ring is 500nm, the minor axis external diameter is 800nm, the major axis internal diameter is 2500nm, the major axis external diameter is 2800nm, the ratio of the minor axis of elliptical ring and major axis internal diameter is 1: 5.The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) is that oval-shaped Au is metal-cored for the cross section, oval minor axis 300nm, minor face is 1: 5 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 2 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, 1g, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1f, bit line BL2 (4d) place layer 1d and ground wire GND (4a) and transition metal layer TM (4b) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL2 (4d) below and its upper electrode directly is connected with bit line BL2 (4d); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with the drain electrode (0b) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b) of bottom.

Thus, with the unit shown in Fig. 2 A, the 2B is example, in the addressing read operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value less than low critical value I by selecteed bit line BL2 (4d) then _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current arrives ground wire GND (4a) by bit line BL2 (4d) via the source electrode (0a) of the drain electrode (0b) of closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via source electrode (0a), the contact hole (3a) of the drain electrode (0b) of metal-cored MC (6), transition metal layer TM (4b), contact hole (3b), transistor T R (0), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Embodiment 9,

Shown in Fig. 3 A, 3B, the magnetic RAM memory cell array is combined by a large amount of mram cells, in a mram cell, comprise the oval ring-shaped magnetic multi-layer film storage unit of a closure RML (5), be arranged in metal-cored MC (6), transistor T R (0), transition metal layer TM (4b, 4b1,4b2), contact hole (3a, 3b, 3b1,3b2) and one group of wiring of the geometric center of closed oval ring-shaped magnetic multi-layer film storage unit RML (5), be i.e. bit line BL1 (4c), word line WL1 (2), word line WL2 (7) and ground wire GND (4a).Closed oval ring-shaped magnetic multi-layer film storage unit RML (5) and transistor T R (0) interconnect by transition metal layer TM (4b) and contact hole (3b).On layout, bit line BL1 (4c) is arranged in the top of closed oval ring-shaped magnetic multi-layer film storage unit RML (5) and directly links to each other with the oval ring-shaped magnetic multi-layer film storage unit of closure RML (5).

The structure of the magnetoresistance effect among the oval ring-shaped magnetic multi-layer film storage unit RML of this closure (5) is at the thick SiO of 1mm ₂On/Si the substrate successively the thickness of deposition be the bottom buffering conductive layer Ta of 2nm, thickness is (AFM) IrMn of antiferromagnetic pinned magnetosphere (or hard magnetic layer) of 5nm, thickness is pinned magnetosphere (FM1) CoFeB of 2nm, thickness is middle layer (I2) Al of 0.8nm ₂O ₃, thickness is free soft magnetosphere (FM2) CoFeB of 1nm and the overlayer Ta that thickness is 2nm, the minor axis internal diameter of elliptical ring is 1000nm, the minor axis external diameter is 2000nm, the major axis internal diameter is 5000nm, and the major axis external diameter is 6000nm, and the ratio of the minor axis of elliptical ring and major axis internal diameter is 1: 5.The metal-cored MC (6) that is arranged in the geometric center of closed oval ring-shaped magnetic multi-layer film storage unit RML (5) is that oval-shaped Au is metal-cored for the cross section, oval minor axis 500nm, minor face is 1: 5 with the width ratio on long limit, and the preparation of the magnetoresistance effect of closed form containing metal core provides in the patent of separate case application in detail.

Shown in Fig. 3 B, the whole M ram cell is made of several layers 1a, 1b, 1c, 1d, 1e, 1f, and the non-functional area in these layers is buried medium such as SiO by insulation ₂Bury Deng institute.Metal wiring layer only has three layers in mram cell, be bit line BL1 (4c) place layer 1e, transition metal layer TM (4b) place layer 1c and ground wire GND (4a) and transition metal layer TM (4b1,4b2) place layer 1b, closed magnetic multilayer film storage unit RML (5) is arranged in bit line BL1 (4c) below and its upper electrode directly is connected with bit line BL1 (4c); The lower electrode of closed magnetic multilayer film storage unit RML (5) is connected with first drain electrode (0b1) of transistor T R (0) by transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1); The metal-cored MC (6) that is arranged in the geometric center of closed magnetic multilayer film storage unit RML (5) directly is connected with the bit line BL1 (4c) at top and the transition metal layer TM (4b2) of bottom; Transistor T R (0) is made up of two workspaces, two shared same source electrodes in workspace (0a), the drain electrode of first workspace and secondary service area is respectively 0b1 and 0b2, and two workspace duties are separately controlled by the word line WL2 (7) and the given level of WL1 (2) that are arranged in the grid top respectively.

Thus, with the unit shown in Fig. 3 A, the 3B is example, in the addressing read operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state, derive a value less than low critical value I by selecteed bit line BL1 (4c) then by selecteed word line WL2 (7) _C1Read current (corresponding current density, J _C1=10 ²A/cm ²Electric current=current density * closed magnetic multilayer film sectional area), then read current by bit line BL1 (4c) via closed magnetic multilayer film storage unit RML (5), transition metal layer TM (4b), contact hole (3b), transition metal layer TM (4b1), contact hole (3b1), first drain electrode (0b1) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) and arrive ground wire GND (4a), thereby obtain closed magnetic multilayer film storage unit RML (5) bit-level (soft magnetosphere or free soft magnetosphere) current magnetized state, i.e. data of storing in the mram cell; In the addressing write operation of MRAM, at first provide a suitable level and make first workspace of transistor T R (0) work in conducting state by selecteed word line WL1 (2), derive a value greater than low critical value I by selecteed bit line BL1 (4c) then _C1And less than high critical value I _C2Write current (corresponding current density, J _C2=10 ⁵A/cm ²Electric current=current density * metal-cored sectional area), because the magnetic field that write current produces also distributes in the form of a ring, thereby the magnetized state that can control the bit-level (soft magnetosphere or free soft magnetosphere) of closed magnetic multilayer film storage unit RML (5) is orientated clockwise or counterclockwise, make bit-level (soft magnetosphere or free soft magnetosphere) distinguish identical clockwise or counterclockwise or opposite (being the parallel or antiparallel of the magnetization) with the magnetized state of pinned magnetosphere (or hard magnetic layer), thereby obtain low resistance and high resistance two states (promptly obtaining high output voltage and low output voltage two states), just just can realize the write operation of MRAM by the direction of Control current.After write current arrives ground wire GND (4a) by bit line BL1 (4c) via second drain electrode (0b2), the source electrode (0a) of transistor T R (0), the contact hole (3a) of metal-cored MC (6), transition metal layer TM (4b2), contact hole (3b2), transistor T R (0), the magnetized state of the bit-level of closed magnetic multilayer film storage unit RML (5) (soft magnetosphere or free soft magnetosphere) also write by write current immediately, so finished writing of data in the mram cell.

Claims (11)

1, a kind of magnetic RAM based on closed magnetic multilayer film is characterized in that: the magnetoresistance effect that uses closed magnetic multilayer film or closed form containing metal core is as storage unit.

2, the magnetic RAM based on closed magnetic multilayer film as claimed in claim 1, it is characterized in that: described closed magnetic multilayer film comprises each layer of conventional magnetoresistance effect, and the xsect of this magnetoresistance effect is closed straight-flanked ring or elliptical ring, wherein the width of ring is 10～100000nm in the rectangle, the width of rectangle outer shroud is 20～200000nm, and the width of ring and the ratio of length are 1: 1～5 in the rectangle; The minor axis of ring is 10～100000nm in oval, and the ratio of minor axis and major axis is 1: 1.1～5, and the minor axis of oval outer shroud is 20～200000nm.

3, the magnetic RAM based on closed magnetic multilayer film as claimed in claim 1, it is characterized in that: the magnetoresistance effect of described closed form containing metal core comprises each layer of conventional magnetoresistance effect, comprises that also of the geometric center position that is positioned at this ring-type multilayer film is metal-cored; The xsect of this magnetoresistance effect is closed straight-flanked ring or elliptical ring, and wherein the width of ring is 10～100000nm in the rectangle, and the width of rectangle outer shroud is 20～200000nm, and the width of ring and the ratio of length are 1: 1～5 in the rectangle; The minor axis of ring is 10～100000nm in oval, and the ratio of minor axis and major axis is 1: 1.1～5, and the minor axis of oval outer shroud is 20～200000nm; One of also comprising the geometric center position that is positioned at this closed hoop multilayer film is metal-cored, and this metal-cored xsect is rectangle or ellipse, and wherein, the width of rectangle is 5～50000nm, and the ratio of width and length is 1: 1～5; Oval-shaped minor axis is 5～50000nm, and oval-shaped minor axis and major axis ratio are 1: 1.1～5, and the shape of metal-cored shape and close-shaped magnetoresistance effect is complementary.

4, the magnetic RAM based on closed magnetic multilayer film as claimed in claim 3 is characterized in that: described metal-cored material is Au, Ag, Pt, Ta, W, Ti, Cu or Al.

5, as claim 2 or 3 described magnetic RAMs based on closed magnetic multilayer film, it is characterized in that: the magnetoresistance effect of described closed magnetic multilayer film or closed form containing metal core for no pinning type or pinning type, or double potential barrier type.

6, a kind of magnetic RAM based on closed magnetic multilayer film comprises:

The memory read/write control module array that transistor unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate;

The memory cell array that the closed magnetic multilayer film storage unit constitutes, wherein the geometry of storage unit is a closed magnetic multilayer film as claimed in claim 2;

The transition metal layer that connects above-mentioned transistor unit and closed magnetic multilayer film storage unit;

And word line and bit line, described word line also is described transistorized grid simultaneously, described bit line is arranged in the top of described closed magnetic multilayer film storage unit, and is vertical mutually with described word line, and directly is connected with described closed magnetic multilayer film storage unit.

7, the control method of the described magnetic RAM based on closed magnetic multilayer film of a kind of claim 6, it is for realizing read operation and the write operation of MRAM by the size and Orientation of the electric current in the storage unit of flowing through.

8, the control method of the magnetic RAM based on closed magnetic multilayer film as claimed in claim 7 is characterized in that:

When based on the electric current in the closed magnetic multilayer film storage unit less than a specific low critical value I _C1The time, the magnetized state of its bit-level can not changed, thereby realizes the read operation of MRAM; Described low critical value I _C1=current density * based on closed magnetic multilayer film sectional area, current density, J _C1=10～10 ²A/cm ²

When based on the electric current in the closed magnetic multilayer film storage unit greater than this low critical value I _C1And less than high critical value I _C2The time, sense of current will change the magnetized state based on closed magnetic multilayer film storage unit bit-level, by forward and negative sense spin polarization tunnelling current, the magnetized state of realizing its bit-level is orientated clockwise or counterclockwise, make bit-level identical clockwise or counterclockwise or opposite respectively with pinned magnetospheric magnetized state, thereby obtain low resistance and high resistance two states, just just can realize the write operation of MRAM by the direction of Control current; Described high critical value I _C2=current density * based on closed magnetic multilayer film sectional area, current density, J _C2=10 ²～10 ⁶A/cm ²

9, a kind of magnetic RAM of magnetoresistance effect of closed form containing metal core comprises:

The memory read/write control module array that transistor unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate;

The memory cell array that the magnetoresistance effect storage unit of closed form containing metal core constitutes, wherein the geometry of storage unit is the magnetoresistance effect of closed form containing metal core as claimed in claim 3;

The transition metal layer that connects the magnetoresistance effect storage unit of above-mentioned transistor unit and closed form containing metal core;

And word line and two bit lines, described word line also is described transistorized grid simultaneously, described two bit lines are arranged in the top of the magnetoresistance effect storage unit of described closed form containing metal core, bit line is vertical mutually with described word line, and directly be connected with the magnetoresistance effect storage unit of described closed form containing metal core, metal-cored in the magnetoresistance effect storage unit of bit line and described closed form containing metal core directly links to each other, and isolated mutually by a layer insulating and bit line.

10, the control method of the magnetic RAM of the magnetoresistance effect of the described closed form containing metal of a kind of claim 9 core, it is for by realizing the write operation of MRAM to the metal-cored electric current that applies in the storage unit, the tunnelling current that applies by the magnetoresistance effect to the closed form containing metal core in the storage unit is realized the read operation of MRAM.

11, the control method of the magnetic RAM of the magnetoresistance effect of closed form containing metal core as claimed in claim 10 is characterized in that:

The electric current that applies in the magnetoresistance effect of the magnetoresistance effect storage unit of closed form containing metal core is less than low critical value I _C1The time, the magnetized state of its bit-level can not changed, thereby realizes the read operation of MRAM; Described low critical value I _C1The magnetoresistance effect sectional area of=current density * closed form containing metal core, current density, J _C1=10～10 ²A/cm ²

Apply electric current in metal-cored in the magnetoresistance effect storage unit of closed form containing metal core, in metal-cored in the magnetoresistance effect storage unit of closed form containing metal core, apply electric current greater than low critical value I _C1And less than high critical value I _C2The time, sense of current will change the magnetized state of the magnetoresistance effect storage unit bit-level of closed form containing metal core, drive current by forward and negative sense produces clockwise or anticlockwise magnetic field, the magnetized state of realizing its bit-level is orientated clockwise or counterclockwise, make bit-level identical clockwise or counterclockwise or opposite respectively with pinned magnetospheric magnetized state, thereby obtain low resistance and high resistance two states, just just can realize the write operation of MRAM by the direction of Control current; Described high critical value I _C2=current density * metal-cored sectional area, current density, J _C2=10 ²～10 ⁶A/cm ²

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