CN1898854A - Meso-microelectromechanical system having a glass beam and method for its fabrication - Google Patents

Abstract

A meso-electromechanical system (900, 1100) includes a substrate (215), a standoff (405, 1160) disposed on a surface of the substrate, a first electrostatic pattern (205, 1105, 1110, 1115, 1120) disposed on the surface of the substrate, and a glass beam (810). The glass beam (810) has a fixed region (820) attached to the standoff and has a second electrostatic pattern (815, 1205, 1210, 1215, 1220) on a cantilevered location of the glass beam. The second electrostatic pattern is substantially co-extensive with and parallel to the first electrostatic pattern. The second electrostatic pattern has a relaxed separation (925) from the first electrostatic pattern when the first and second electrostatic patterns are in a non-energized state. In some embodiments, a mirror is formed by the electrostatic materials that form the second electrostatic pattern. The glass beam may be patterned using sandblasting (140).

Description

Centre-MEMS (micro electro mechanical system) and manufacture method thereof with glass beam

Background technology

Optical switch based on light-electromechanics, electrical-optical or liquid crystal technology is commercial the purchase.Commercial light-electric mechanical switch uses the silicon manufacturing of silicon treatment technology usually, and comprise can the static micron-scale mirror that starts of electricity.They are categorized as MEMS (micro electro mechanical system) (MEMS).Cost, operating reliability and power drain are the major defects that these can the commercial optical switch of buying.In order to improve reliability, use refinement treatment level Hermetic Package MEMS structure-further increased cost.

In another kind of MEMS technology, be called centre-MEMS (MESO-MEMS) technology, on polymer architecture, make low-cost switch with mechanical cantilever member, described mechanical cantilever builds up to small part by the copper production of metal-normally.These have shown provides the electric switch of usefulness function, for example is used for radio-frequency (RF) signal switch.

Need a kind of the more reliable of optical switch and switching technique more cheaply of can be used for.

Description of drawings

By example explanation the present invention, but be not restricted to accompanying drawing, wherein similarly Reference numeral is represented similar elements, in the accompanying drawings:

Fig. 1 illustrates according to embodiments of the invention to make the centre-MEMS (micro electro mechanical system) (flow chart of the method step of centre-MEMS);

Fig. 2-the 9th illustrates the mechanical view according to embodiments of the invention perspective view of centre-MEMS structure on each fabrication stage;

Figure 10 is the mechanical view that illustrates according to embodiments of the invention end view of centre-MEMS structure on the advanced stage of making;

Figure 11 and Figure 12 are the mechanical view that the perspective view of the centre-MEMS structure according to the embodiment of the invention is shown; With

Figure 13 is the schematic diagram that comprises the electric installation of centre-MEMS.

The technical staff will understand in the accompanying drawings element in order to simplify and to know that reason illustrates, and is not necessarily to scale.For example, some size of component in the accompanying drawings can be amplified to help improve the understanding of embodiments of the invention with respect to other element.

Embodiment

Before describing in detail, should find out that the present invention mainly is the combination and the apparatus assembly relevant with micro-machinery switch of method step according to concrete centre-MEMS (micro electro mechanical system) of the present invention.Therefore, apparatus assembly and method step are represented in suitable place with the ordinary symbol in the accompanying drawing, only illustrating those details relevant with understanding the present invention, is tangible so that make clear easily the disclosing of ins and outs of those of ordinary skills that has reading this specification.

Referring to Fig. 1, the flow chart of method that is used to make centre-MEMS according to the embodiment of the invention is shown.Fig. 2-the 9th is according to the isometric view of centre-MEMS in each stage of making of the embodiment of the invention.

At step 105 (Fig. 1), according to embodiments of the invention, the interior metal layer from substrate 215 forms first electrostatic pattern 205 (referring to Fig. 2) in the equipment region 210 of substrate 215.In some instances, substrate 215 may be greater than equipment 210.In the example of describing with reference to figure 2, equipment region 210 and substrate 215 are shown with identical size.Substrate 215 can be made by arbitrary organic printed substrate (PWB) material, and one of them example is FR-4, perhaps can be made by the material of more expensive (for example teflon) or more cheap (epoxy resin that does not for example have glass to fill).Substrate can be multilayer PWB.Metal level can have between 2 and 70 microns, and the copper of thickness between 5 microns and 35 microns more typically, but also can be other material, for example nickel, gold or multiple layer metal or metal alloy.Metal only needs can keep and discharge electrostatic charges.Copper is useful, because it is relatively cheap and general.First electrostatic pattern 205 can use conventional light offset printing pattern formation and etching technique or apply conductive paste manufacturing by silk screen printing, liner printing or other conventional thick film bonding application process.

At step 110 (Fig. 1),, sacrificial light is set on equipment region 210 (Fig. 2) sends a telegraph dielectric layer 305 (referring to Fig. 3) according to embodiments of the invention.Sacrificial light is sent a telegraph dielectric layer 305 preferably photosensitive (plus or minus) epoxy resin, can it be set to thickness between 50 and 200 microns by roller coat or curtain coating.Can be used for sacrificial light, to send a telegraph the examples of material of dielectric layer 305 are Probimer  7081/82 photopolymer resin materials of being made by the Huntsman of Basel, Switzerland.For example, resin material can be dried in the auxiliary infrared horizontal drying oven of air in 30-60 minute in 60-80 degree centigrade temperature.Sacrificial light is sent a telegraph dielectric layer 305 can have thickness between 7 microns and 200 microns, more typically, and between 50 microns and 125 microns.

At step 115 (Fig. 1),, expose sacrificial light and send a telegraph dielectric layer 305 to form hiding stent area 405 (referring to Fig. 4) according to embodiments of the invention.For example, in case sacrificial light is sent a telegraph dielectric layer 305 dryings, then use wiring diagram (film) with the ultraviolet radiation of using the 1500-1700 millijoule pattern to be exposed on the photopolymer, set up one or more " hiding " imaging region, it comprises hiding stent area 405.Send a telegraph the main material on every side of dielectric layer 305 with sacrificial light and compare, hide the difference polymerization state definition of stent area 405 by it.In case its manufacturing is finished, then one or more hiding imaging regions will be as the bounding point of centre-MEMS of the present invention.In the PWB of routine manufacturing environment, PWB will experience heat " impact " and carry out solvent develop subsequently immediately after ultraviolet exposure.In the present invention, imaging region is not by thermal shock or development, up to step subsequently.In this, equipment region 210 is still sent a telegraph dielectric layer 305 by sacrificial light fully basically and is covered, and exposes smooth basically surface.

At step 120 (Fig. 1), according to embodiments of the invention, first side (top side) (referring to Fig. 5) of glass dielectric 505 is coated with electrostatic material 510, forms cover glass dielectric 500.Notice that this step may appear at before or after arbitrary step 105,110 and 115.At needs reflection layer (mirror) (for example, for the embodiment that is used for the light beam switch), will be on the surface of glass dielectric 505 among the embodiment of (for example with need be relative) with reflecting surface (mirror) with the embodiment of the surface reflecting surface at an angle of glass dielectric 505, in this coating step 120, use material static simultaneously and that light reflects.Glass dielectric 505 can be formed in the shape of equipment region 210 (perhaps littler), and has the thickness between 30 and 50 microns usually, but may diminish to 10 microns and greatly to 75 microns.The coating of glass dielectric 505 top sides comprises applying to have the one or more metal levels that are lower than 25 microns gross thickness.Second side (bottom side) of glass dielectric 505 also can apply electrostatic material 515 at the coating procedure of first side, perhaps as independent step, perhaps is not independent process fully.First example that static and light emission apply is the about 500 dust titanium/tungsten (Ti/W) of spraying on the both sides of glass dielectric 505, succeeded by the copper of about 1000 dusts of spraying on the both sides of glass dielectric 505.Second example of spraying is to deposit the copper of the chromium of about 500 dusts succeeded by 5000 dusts by evaporation on two surfaces of glass dielectric 505.These static materials 510,515 have extraordinary reflective character, and compatible fully with the PWB treatment technology of routine.Other metal level can be used for static state and light reflective surface, for example chromium, chromium/gold, titanium/tungsten and titanium/tungsten and copper, tantalum, and more the material of wide region can be used for only static characteristic.Only static characteristic is useful for electronic switch, for example radio frequency (RF) switch.Operable other electrostatic material 510 is other electric conducting materials, for example fine copper, nickel, silver, gold or with the conductive metal alloy of other combination of materials.The static materials 510 that is subject to the influence of conventional PWB etching technique may be more useful, if the additional manufacturing step that its compatibility is described hereinafter, but still be to be used to form unique apparatus described here, even not with conventional PWB technical compatibility.

As mentioned above, can in identical one or more steps, on end face and bottom surface, form static materials.Thereby, also can in same steps as, on end face and bottom surface, form minute surface.In certain embodiments, on top surface of glass, do not form static materials, but on the bottom surface, form static materials as specular material.

Should be appreciated that, in other embodiments of the invention, can form minute surface on except the position of first static pattern 205 on the end face of the glass dielectric that applies, this may need and the different glass beam shape of glass beam of description hereinafter.

At step 125 (Fig. 1), according to embodiments of the invention, the glass dielectric 500 that applies is laminated to sacrificial light sends a telegraph (referring to Fig. 6) on the dielectric layer 305, form the glass dielectric 600 of lamination.It still is " gluing " that sacrificial light is sent a telegraph dielectric layer 305, especially under heat and pressure, and as metallized glass dielectric " glue ".For example the glass dielectric 500 that can apply at the vacuumize film laminator of conventional PWB laminator (the Wa Baishi laminating press of being made by the assorted MPI of watt uncle of state of Indiana Wa Baishi) and routine is laminated to sacrificial dielectric layer.It should be noted that especially and using Probimer  sacrificial light to send a telegraph that laminating temperature must be no more than 80 degrees centigrade in the embodiments of the invention of dielectric layer 305.Using Probimer  sacrificial light to send a telegraph processing among the embodiment of dielectric layer 305 is coated glass dielectric 500 to be laminated to sacrificial light in the vacuum laminator at 65-75 degree centigrade to send a telegraph on the dielectric layer 305 about 10 minutes.

At step 130 (Fig. 1); according to embodiments of the invention, in the expectation geometric figure that comprises basically with second static pattern 715 of first static pattern, 205 co-extensive, have on the laminated glass dielectric 600 of protection pattern 710 (Fig. 7) and forming the pattern protective layer.This pattern comprises the interim etch-resistant material of standard that forms by routine techniques, and some examples in the routine techniques are: photoimaging and development dry film or liquid photoresist, silk screen printing and ornamental engraving printing.

At step 135 (Fig. 1), eliminate in a part of static materials 510 that is not positioned on coated glass dielectric 500 tops of second electrostatic pattern 715 according to embodiments of the invention.Eliminating this part static materials 510 comprises and applies the static materials etchant.When static materials 510 comprises the top layer of copper, use conventional copper etch chemistry (peroxide/sulphur, positive copper chloride, ammonium chloride, or the like).When static materials 510 comprised multilayer, this step can comprise the etching of using additional solutions.In the example of the Ti/W layer under copper, utilization temperature (50 degrees centigrade) hydrogen peroxide solution etches away the Ti/W layer outside the desired pattern that is located immediately under the copper layer expediently.In alternate embodiment, by the L.L.C. of Shipley company of Massachusetts Ma Er Greensboro make can the commercial material of buying, be designated 746W and be generally used for the etched etchant of PWB copper and be proved to be and can eliminate the Ti/W layer effectively.When using chromium as a part of static materials 510, then can in high cerium ammonium nitrate solution, etch away chromium (the conventional chromium etchant of making as the Transene company by Massachusetts Dan Fusi " chromium etchant 1020 " can buy), succeeded by aforesaid conventional copper etching.

At step 140 (Fig. 1), eliminate the not glass in the glass beam pattern.Applied with the pattern protective layer 710 of protection in metal/minute surface etching step 135 and remaining pattern static materials 510 all as intrinsic anti-etching dose in glass elimination processing procedure.In one embodiment, glass about 25 minutes of etching in 25% hydrogen fluoride (HF) solution.Also can be in ammonium hydrogen fluoride solution, buffered oxide etching solution (BOE) or silicate fluoride solution this glass of etching.In another embodiment, can utilize mechanical means is that glass is eliminated in sandblast.For example, can be at distance substrate 215 2 " on the position of (5.08 centimetres) with per minute 4 " the carrier speed of (10.16 centimetres) uses 27 microns al oxide granules from having 0.035 " 80 pounds per square inch (552 kPas) executive level sandblasts of nozzle ejection of (0.88mm) nozzle diameter.When use is sandblasted, pattern protective layer 710 can be applied to the thickness thicker, for example 50 to 100 microns than routine.

At step 145 (Fig. 1),, send a telegraph a part of static materials 515 of surface elimination on the bottom surface of coated glass dielectric 505 of dielectric layer 305 from sacrificial light according to embodiments of the invention.Need send a telegraph the surperficial elimination of appearing of dielectric layer 305 from sacrificial light and be positioned at the static materials of eliminating on the glass bottom surface 510 (for example Ti/W-copper or chromium/copper).By once more centre-MEMS structure 800 being placed on, eliminate static materials 515 (for example Ti/W-copper or chromium/copper) such as in the suitable etching solution such as warm peroxide (or chromium etchant) and standard copper etching solution.Having this second layer Ti/W copper or chromium-copper in glass elimination process may be very important, because its guard ring epoxy resins avoids the glass remover, especially in chemically etching process.Resin itself is anti-hydrofluoric, but long exposure may weaken the photosensitive attribute of material.When elimination glass is sandblasted in use, can also use its to eliminate static materials part 515 to substitute the etching static materials.

In step 150; after the static materials part of eliminating on coated glass dielectric 505 bottom surfaces 515; eliminate the remainder of pattern protective layer 710 from the end face of coated glass; stay the glass beam that on the glass beam end face, has static materials 510, and expose the reflecting surface (Fig. 8) of second static pattern 815.This step can be carried out before or after step 155.The solution such as group water solution of use such as NaOH, it will dissolve protective layer 705 basically, and not injure the other parts of centre-MEMS structure 800 (Fig. 8).

Referring to Fig. 8,, engrave the perspective view of centre-MEMS structure 800 when being shown in this of manufacturing according to embodiments of the invention.Now, the residue coated glass is the pattern with glass beam shape of being determined by protection pattern 710.In the middle of this-MEMS structure 800 has glass beam 810, it have with first electrostatic pattern 205 basically second electrostatic pattern, 815, the first electrostatic patterns of co-extensive be positioned on the bracketed part of glass beam 810, also be the minute surface in this embodiment.When electrostatic material is formed on the top of glass material 505 and bottom, then this static pattern 815 is positioned on the top and bottom of glass beam 810, according to the material that is used for electrostatic pattern 815, may exist in two minute surfaces on the side.On the other hand, can be only at the top of glass beam 810 or only in bottom formation electrostatic material.

At step 155 (Fig. 1), the sacrificial light of eliminating except the horizontal support zone is sent a telegraph dielectric layer 305.In first substep, in step 110 and 115, in assisting infrared heating heating furnace, batch of material cross-ventilation stove or horizontal air send a telegraph dielectric layer 30560 minutes to finish the light reaction that in the phase I of centre-MEMS structure assembling, begins in thermal shock sacrificial light on the 110-130 degree Celsius.After thermal shock, in second substep, the solvent develop sacrificial light is sent a telegraph dielectric layer, for example uses gamma butyrolactone (GBL) 20 minutes and ultrasonic exciting.GBL will penetrate glass beam 810, eliminate all non-cohesive materials.Hide the material of imaging-hide stent area 405-to keep, eliminated all other sacrificial dielectric material simultaneously as support 905.In case eliminated all sacrificial dielectric material, then glass beam 810 will have airspace in its lower section, allow it freely to change the position according to static excitation.Should be appreciated that there are a plurality of supports in certain embodiments that glass beam may be more complicated more than the crossbeam shown in Fig. 2 to Figure 10.Should also be appreciated that and utilize method described herein in centre-MEMS structure, to make a plurality of glass beams simultaneously.

Referring to Fig. 9 and Figure 10,, the perspective and the end view of centre-MEMS structure 900 is shown according to embodiments of the invention.Make centre-MEMS structure 900 by step 105-155.Glass beam 810 has the fixed area 920 of stent area of appending to 405, and having relaxed pitch 925 between first and second static pattern 205 and 815, relaxed pitch may be between 5 and 200 microns when not having electromotive force (being that they are in unactivated state) between first and second static pattern.(relaxed pitch is determined by the thickness that sacrificial light is sent a telegraph dielectric layer 305 basically.) when they were in unactivated state, second static pattern 815 and the first attitude pattern were substantially parallel.Having used the approx. dimension of the centre-MEMS structure of above-mentioned treatment step manufacturing is 3.5mm, the about 1.5mm of static pattern width.Can use centre-MEMS structure as optical switch such as centre-MEMS900, and with compare such as electrical-optical-mechanical switch based on silicon, can make more economically.

In step 160, on the part of the glass beam 810 that is laminated to stent area 405 or near be formed into second static pattern 815 and be electrically connected.This can carry out in arbitrary reliable mode, for example on the top of the fixed area 920 of glass beam 810 and/or bottom surface (according to static pattern whether on top or the bottom or simultaneously on top and bottom) welding or wire bond wire to electrostatic material 510, perhaps by near the fixed area 920 of glass beam 810, electric conducting material being pressed into static materials 510.Can form by pattern to the electrical connection of first static pattern 205 and to be connected to first static pattern 205 and to provide with the conventional printed wire that is connected liner on substrate 215, described on-chip connection liner is used for electric connector or is connected to electronic building brick, for example ic terminal.Should be appreciated that by on the surface that static materials only is applied to glass material 505, with the static materials that constitutes good minute surface by use, the minute surface that is obtained can be front surface or the rear surface minute surface that is used to incide the light on the end face of glass beam 810, this provide may be useful design alternative.And, should be appreciated that in an embodiment of the present invention, can on end face, bottom surface or two surfaces of glass beam 810, static force be applied to static pattern 815, provide other useful design alternative of possibility.

Should be appreciated that referring to figs. 1 to the described example of Figure 10 to relate to centre-MEMS structure that it has the glass beam that comprises the flexible straight-arm that permission moves from release position along axle basically, and has the minute surface that moves by the motion of this arm.In this example, second static pattern 205 and minute surface (reflecting surface) on the same position of glass beam 810, cantilever position one section nearer position of fixed area 920 glass beam 810 farthest of distance glass beam 810 (promptly).This is simple and very useful MEMS, and optical switch or modulation function can be provided, but has of the present invention many modification that other useful function can be provided.For example, minute surface can be positioned near the cantilever position of second static pattern 205, but not thereon.As another example, can make relative a pair of electric contact, a end 1005 at glass beam 810, may there be minute surface in another on the relative position 1010 of substrate 215.In the middle of this electric switch-example of MEMS may needn't have a plurality of metals that constitute electrostatic pattern 205 and 815, and can be operating as radio-frequency (RF) switch.Such electric contact also can the more close stent area 405 rather than second static pattern 205.As another example, may exist near the cantilever position or be attached at the light guiding device of glass beam 810 on it, rather than (perhaps may except mirror) be at the end face of glass beam 810 or the mirror on the bottom surface.The light guiding device can be level crossing or the shutter of installing with certain Plane Angle with respect to the end face of glass beam 810 (the opaque plane of non-reflection), perhaps the object of certain other shape for example is installed in the cross bar at the triangular cross section with two specular surfaces near the glass beam 810 of cantilever position.

Now, referring to Figure 11 and Figure 12,, the perspective view of another example of the centre-MEMS structure 1100 of optics is shown according to embodiments of the invention.Use basic identical in the above-mentioned step manufacturing centre-MEMS structure 1100 that is used for the step of centre-MEMS structure 900.Figure 12 is illustrated in the centre-MEMS structure 900 after the completing steps 105-155, and Figure 11 illustrates the bottom (with not relating to concrete manufacturing step) of centre-MEMS structure 900.In Figure 11 and Figure 12, there are four pairs of electrostatic patterns as can be seen, comprise electrostatic pattern 1105,1205, electrostatic pattern 1110,1210, electrostatic pattern 1115,1215 and electrostatic pattern 1120,1220. Electrostatic pattern 1105,1110,1115 and 1120 is formed on the substrate 1150.Electrostatic pattern 1215 and 1220 is positioned at the cantilever position that is used for flexible header portion 1240 and 1245, be positioned at the flexible header portion 1250 that is used for glass beam and 1255 cantilever position with electrostatic pattern 1205 and 1210, described glass beam comprises flexible part 1205,1210,1240 and 1245 and electrostatic pattern 1205,1210,1215,1220.To (1105,1205), (1110,1210), (1115,1215) and (1120,1220), when centre-MEMS was not activated, electrostatic pattern was co-extensive basically, and is parallel to each other for each static.Electrostatic pattern 1205 can be connected conductively with 1210, also is configured for the minute surface of moving target to the light beam of minute surface, but for the static excitation purpose, electrostatic pattern 1205,1210 can be considered as two patterns dividing with (void) line 1208.Electrostatic pattern 1205 and 1210 can interconnect conductively, and is connected to electrostatic pattern 1215 and 1220, but for the static excitation purpose, it can be considered as two electrostatic patterns.Common potential can be applied to four electrostatic patterns 1205,1210,1215 and 1220 and determine moving of minute surface by the independent electromotive force that can be applied to electrostatic pattern 1105,1110,1115 and 1120 basically.Two pairs of electrostatic patterns (1105 as can be seen, 1205) and (1110,1210) on first cantilever position of the minute surface freedom of motion that gives by flexible glass beam arm 1240 and 1245, other two pairs of electrostatic patterns (1105,1205) and (1110,1210) be located at perpendicular on the cantilever position on second of first minute surface freedom of motion that gives by flexible glass beam arm 1250 and 1255.Thereby by suitably applying electrical potential difference, minute surface can motion in the angular deflection restriction of forcing by the size of centre-MEMS1100 at least in two axles.Can use device scan light beam such as centre-MEMS1100 to set up image.In relevant embodiment, only use in the middle of two pairs of electrostatic patterns on the common axis can make up single shaft-MEMS, the electrostatic pattern (1115 of Figure 12 in being similar to embodiment shown in Figure 12 for example, 1215) and (1120,1220), but the whole zone with the electrostatic pattern of comprising 1215,1220, crossbeam 1250,1255, electrostatic pattern 1210 and 1205 are single real plates.Such equipment can be used for such as along the axle mobile beam, and mobile light-sensitive paper under this axle with recording voltage, is used for electrocardiogram.

Referring to Figure 13,, illustrate and comprise in the middle of at least one-schematic block diagram of the example of the electronic installation of MEMS structure according to embodiments of the invention.Optical switching network comprises row's fiber switch 1305 and 1306, and described switch has 1350 and two optical fiber outputs 1365 and 1367 of single optical fiber input respectively.Single optical fiber input 1350 can switch to one of two optical fiber outputs 1365 and 1367 being determined by the controller 1320 that is coupled to static interface 1310.Each switch 1305 comprises the waveguide 1353 that is used for optical fiber input 1350, and light input signal is directed to minute surface 1385 on the glass beam of the present invention.When controller 1320 was determined not switch centre-MEMS equipment, as under the situation of fiber switch 1305, static interface 1310 was eliminated electrostatic charge differences all between electrostatic pattern 1385 and 1383 basically, and this glass beam constitutes loose position.Therefore, light input signal reflects 1357 minute surfaces, 1385 to first optical fiber output waveguides and amplifier 1359, and is guided out the optical fiber 1365 that is coupled to switch 1305, and the optical fiber 1367 that is coupled to switch 1305 does not have signal.When controller 1320 was determined to switch centre-MEMS equipment, as under the situation of fiber switch 1306, static interface 1310 was placed on the electrostatic charge difference on electrostatic pattern 1385 and 1383.Therefore, glass beam constitutes the activation bending position, and light input signal reflects 1393 minute surfaces, 1385 to second optical fiber output waveguides and amplifier 1367, and is guided out the optical fiber 1367 that is coupled to switch 1306, and the optical fiber 1365 that is coupled to switch 1306 does not have signal.

Centre-MEMS the structure that constitutes according to the present invention can make up mutually with the silicon equipment that uses the PWB technology and other electronic building brick.So the photoelectric circuit (promptly comprising circuit or light path or both paths) that constitutes may be complicated system, for example comprise complete basically optical receiver, transmitter or transceiver, and can be included in arbitrary parts in the various optoelectronic components (promptly comprising circuit or light path or both paths), comprise EPON and consumer products, for example the projection display and Fiber to the home set-top box.

In description above, the present invention and benefit and advantage that the concrete example of reference is described.Yet those of ordinary skill in the art will understand under the situation that does not break away from the scope of setting forth of the present invention in claims can carry out various modifications and change.Therefore, specification and accompanying drawing will be considered as illustrative, and nonrestrictive, all such modifications will comprise within the scope of the invention.May cause become significant benefits more, advantage, solution and any one or a plurality of element of arbitrary benefit, advantage or solution will be not interpreted as conclusive, the essential or necessary feature or the element of arbitrary or all authority requirement.

As used herein, term " comprises ", " comprising " or its any other modification will cover comprising of non-eliminating, so that comprise processing method, article or the equipment of element tabulation and not only comprise those elements, but can comprise and clearly not listing or other element that this processing, method, article or equipment are intrinsic.

" another " is defined as at least the second or more as used herein.Structure " perhaps ... perhaps " be equivalent to boolean's eliminating or statement.Term " comprises " and/or " having " is defined as and comprises as used herein.With reference to electrooptical technology, term " coupling " is defined as connection as used herein, directly also there is no need mechanically although there is no need.

Claims (10)

1. centre-Mechatronic Systems comprises:

Substrate;

At least one is arranged on the support on the substrate surface;

Be arranged on first electrostatic pattern on the substrate surface; With

Glass beam, has the fixed area that is connected at least one support, described support has second electrostatic pattern on the cantilever position of glass beam, wherein second electrostatic pattern and first electrostatic pattern basically co-extensive with parallel, and wherein when first and second electrostatic patterns were in nonexcited state, second electrostatic pattern had the loose interval with first electrostatic pattern.

2. according to the centre-Mechatronic Systems of claim 1, wherein the thickness of glass beam is between 10 and 75 microns.

3. according to the centre-Mechatronic Systems of claim 1, wherein second electrostatic pattern is a conducting metal, and this conducting metal is formed pattern to be included in the electric terminals zone on the glass beam fixed area.

4. according to the centre-Mechatronic Systems of claim 1, wherein glass beam also comprises the minute surface that closes on cantilever position.

5. according to the centre-Mechatronic Systems of claim 4, wherein the light guiding device closes on cantilever position and is attached at glass beam.

6. according to the centre-Mechatronic Systems of claim 1, wherein second electrostatic pattern forms minute surface.

7. according to the centre-Mechatronic Systems of claim 1, wherein first and second electrostatic patterns comprise first pair of electrostatic pattern, also comprise at least one pair of additional electrostatic pattern, and wherein each electrostatic pattern of Fu Jia at least one pair of electrostatic pattern comprises:

Be arranged on first electrostatic pattern on the substrate surface;

Second electrostatic pattern on the cantilever position of glass beam, wherein when in the middle of this-during the non-excitation of Mechatronic Systems, second electrostatic pattern and first electrostatic pattern basically co-extensive with parallel.

8. method that is used to make centre-Mechatronic Systems comprises:

In the equipment region of metal level, forming first electrostatic pattern on the substrate at substrate;

Sacrificial light is set on equipment region sends a telegraph dielectric layer;

Expose this sacrificial light and send a telegraph dielectric layer to form at least one hiding stent area;

Use dielectric top of electrostatic material coated glass and lower surface;

To apply dielectric layer is pressed onto sacrificial light and sends a telegraph dielectric layer;

Have formation pattern protective layer on the coated glass dielectric of glass beam pattern, described glass beam comprises second electrostatic pattern of expanding jointly basically with first electrostatic pattern;

Eliminate not glass in the glass beam pattern and electrostatic material; With

Eliminate sacrificial light and send a telegraph the part except at least one hiding stent area of dielectric layer, thereby constitute at least one support.

9. method according to Claim 8,

Wherein forming the pattern protective layer comprises:

On the end face of glass dielectric, apply photosensitive anti-etching dose of at least 50 micron thickness; With

Use pattern to expose photosensitive anti-etching dose; And

Wherein eliminating not the glass in the glass beam pattern and electrostatic material comprises and sandblasting.

10. electronic installation comprises:

Centre-Mechatronic Systems, this system comprises:

Substrate;

At least one is arranged on the support on the substrate surface;

Be arranged on first electrostatic pattern on the substrate surface;

Glass beam, has the fixed area that is connected at least one support, described support has second electrostatic pattern on the cantilever position of glass beam, wherein second electrostatic pattern and first electrostatic pattern basically co-extensive with parallel, and wherein when first and second electrostatic patterns were in nonexcited state, second electrostatic pattern had the loose interval with first electrostatic pattern; With

Controller is coupled to first and second electrostatic patterns, by moving of excitation electrostatic pattern control glass beam.

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