CN1897321B - Submicron organic semiconductor thin-film triode - Google Patents
Submicron organic semiconductor thin-film triode Download PDFInfo
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- CN1897321B CN1897321B CN200610067520XA CN200610067520A CN1897321B CN 1897321 B CN1897321 B CN 1897321B CN 200610067520X A CN200610067520X A CN 200610067520XA CN 200610067520 A CN200610067520 A CN 200610067520A CN 1897321 B CN1897321 B CN 1897321B
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Abstract
The invention is concerned with the inferior micron thickness organic semiconductor film triode that uses the organic semiconductor material mainly. The organic film triode in the developed countries uses the OTFT structure nowadays. The invention includes: the layered structure compound layer on the glass base board 1with the aurum 2, the copper phthalocyanine 3, the aluminum 4, the copper phthalocyanine 5 and the aurum 6; the thickness of the aluminum layer is 20+-10nm, the upper-layer thickness of the copper phthalocyanine is 70+-5nm,the down-layer thickness of the copper phthalocyanine is130+-5nm. The invention can use for the organic display even the soft underlay display, the driving unit of the liquid-crystal panel, the electronic label and the organic integrated circuit chip.
Description
Technical field:
The present invention relates to the submicron organic semiconductor thin-film triode that a kind of organic semiconducting materials is a body making.
Background technology:
In the existing technology, with micromolecule phthalocyanine series pigment such as CuPc CuPc is the electrical characteristic of the organic semiconductor and the conjugated polymer polymer of representative, the particularly research of organic electronic device is significantly being developed in recent years, is referred to as plastic electronic and learns.In research fields such as organic metal, organic superconductor, organic light emissions, obtained compelling achievement in research at present.
The organic thin film triode of developed countries such as present America and Europe research mainly is to adopt the OTFT structure, because organic semiconductor thin-film at room temperature can adopt vacuum vapour deposition, spin coating and ink jet printing are applicable to flexible base, board.
Summary of the invention: the purpose of this invention is to provide a kind of submicron organic semiconductor thin-film triode.
Above-mentioned purpose realizes by following technical scheme:
Submicron organic semiconductor thin-film triode, its composition comprises: glass substrate, the layer structure composite bed that has gold, CuPc, aluminium, CuPc, gold on the described glass substrate, the thickness of described aluminium is 20 ± 10nm, the thickness upper strata of CuPc is 70 ± 5nm, and lower floor is 130 ± 5nm.
Above-mentioned submicron organic semiconductor thin-film triode, at first on described glass substrate, make the gold evaporation membrane electrode, make ground floor CuPc evaporating film then, make the aluminum evaporation film after finishing, at described aluminum evaporation film production second layer phthalocyanine copper film, make the gold evaporation film at last again.
Above-mentioned submicron organic semiconductor thin-film triode, the evaporating temperature of making described phthalocyanine copper film is 400 ℃, and evaporation rate is 3nm/min, and the time is 22-57 minute, and the thickness upper strata of the CuPc of formation is 70 ± 5nm, lower floor is 130 ± 5nm.
This technical scheme has following beneficial effect:
1. product of the present invention goes for flexible base, board, and it is low to be fit to produce cost in enormous quantities, can be applied to the drive circuit of flat-panel monitor, can make cheap logical integrated circuit and memory chip, is with a wide range of applications.
2. product of the present invention is a kind of organic semiconductor phthalocyanine copper film triode (being called for short VOTFT) with semiconductive aluminium film grid of vertical conduction channel structure, has the conducting channel weak point, advantages such as quick action.
3. by control phthalocyanine copper film and thickness semiconductor aluminium gate film, improve the operating current and the switching speed of this triode.Experimental result shows, compares with the organic electrostatic induction diode of pectination aluminium gate, and working direct current improves three orders of magnitude.
4. the submicron organic semiconductor thin-film triode of the present invention development, its DC driven characteristic is equivalent to the polysilicon membrane triode, and this triode is expected to be used for the driver element of organic integration circuit and Organic Light Emitting Diode or liquid crystal panel.
5. the performance measurement of product of the present invention: this mensuration is carried out in atmosphere, ambient temperature is at 20 ℃, the photoelectric effect that produces for fear of irradiate light is to the influence of this product, and sample is placed in the airtight metal box, and the bias condition of measuring this product static characteristic is: be grid voltage V
GSChange to 1V from 0V, voltage V between source-drain electrode
DSBe increased to 2V from 0V, at different grid voltage V
GSUnder the condition, measure source-drain electrode voltage V
DSAnd electric current I between source-drain electrode
DSVariation relation.The measurement result of the Schottky current/voltage rectification characteristic of the phthalocyanine copper film of pectination aluminium gate and both sides as shown in Figure 2, V among the figure
GS-I
GSBe grid and lower source voltage across poles electric current, V
GD-I
GDIt is voltage-to-current between the drain electrode of grid and top.The measurement result that shows according to Fig. 2 shows that phthalocyanine copper film has presented the P type semiconductor conductive characteristic, and the result of the Schottky barrier that forms with the aluminium electrode is consistent.The mensuration of this product quiescent operation characteristic makes bias voltage V between the grid of source
GSStride is 0.2V, changes to 1V from 0V, bias voltage V between source-drain electrode
DSBe increased to 2V, measure source-drain electrode voltage V respectively from-2V
DSAnd electric current I between source-drain electrode
DSBetween variation relation, measurement result is as shown in Figure 3.According to measurement result, electric current I between source-drain electrode
DSIncrease with the grid reverse bias voltage, i.e. increasing and reduce with the Schottky barrier of area of grid.
Accompanying drawing 4 is grid and source electrode bias voltage V
GSAt 0V to 1V, between when changing, specific grid-source bias voltage V
GSWith operating current I
DSTransfer characteristic curve, with reference to the accompanying drawings 4, along with V
GSIncrease, operating current I
DSReduce rapidly, reflected the very strong control ability of grid bias, this product is operated in positive source-drain electrodes voltage, is failure to actuate under negative source-drain electrodes voltage.
Accompanying drawing 5 has shown that this product with thin film aluminum grid is following in working order, grid current I
GAnd the relation of electric current I GS between source-drain electrode, under the condition of same bias voltage VDS=-2～2V, when grid bias was respectively 0V and open-grid, the IDS of mensuration and IG were far smaller than operating current IDS, be about its 1/1000.And grid bias is when being respectively 0V and open-grid, electric current I DS differs three orders of magnitude between the grid of source, therefore in the time of can thinking open-grid, the same with the positive open circuit of double pole triode, the depletion layer current potential of area of grid is in suspended state, bias voltage VDS can not change the Schottky barrier of the depletion layer of area of grid between source-drain electrode, makes that electric current is similar between the grid of source to be blocked.
Because the thickness of semiconductive aluminium film only is 20nm, and the Schottky barrier district of CuPc/aluminium, the positively ionized space charge that produces in semiconductive aluminium film one side is the distribution of δ function, electronics is cohesion in the middle of film, different with bulk metal aluminium, being with of semiconductive rate film divided, according to test result, the conductance of semiconductive rate film is about every millimeter～k Ω, its conductive characteristic is equivalent to heavily mix the n N-type semiconductor N, Schottky barrier drain region at CuPc and aluminium, because covering the surface of the semiconductive aluminium film on the phthalocyanine copper film surface that is the hills and mountains state also is the hills and mountains state, make that Schottky internal electric field pediment portion is the strongest, produce little sharp electrode effect, quicken the charge carrier emission.The image charge layer that semiconductive aluminium film one side produces, make the drain region CuPc the actual effect Schottky gesture highly reduction of heap of stone at aluminium interface, charge carrier by source emitter, then wear CuPc aluminium the charge carrier of the two Schottky gesture of CuPc area of grid of heap of stone, form the operating current of this product, the charge carrier of source emitter is 1/683 in the recombination rate of area of grid, and the carrier density probability of wearing CuPc Schottky gesture area of grid of heap of stone then is in Schottky gesture thickness exponent function relation of heap of stone.The parameter of this this product of being calculated by the result of Fig. 5 is V at bias voltage
DS=2V, V
GSDuring=0V, working direct current density I
DS=1.1mA/cm
2The gain of this product electric current is β
0=683, be far longer than ambipolar inorganic diode, demonstrate the conductive channel, particularly the charge carrier control action of semiconductive aluminium film grid in the two Schottky gesture of deep-submicron grid CuPc/aluminium/CuPc zone of heap of stone, have than the more interesting physical mechanism of inorganic semiconductor.
6. semiconductive film Schottky aluminium gate provided by the invention is called for short VOTFT, and the thickness by the control CuPc has obtained good triode quiescent operation characteristic, and current gain is 683, direct current operating current IDS=～mA/cm
2Result of the test shows, the short-range missile electricity channel structure that the present invention had, help overcoming the low shortcoming of organic semiconducting materials carrier mobility, the little sharp gate effects of thin film aluminum gate surface, quickened the emission of charge carrier, make that this product has presented at a high speed, the high current density characteristic, unsaturated voltage current characteristics, this product are thought organic solid class vacuum triode.Along with the exploitation of high-performance novel organic semi-conductor material, this product can be used for the driver element of organic light emitting display and liquid crystal panel, electronic tag, and organic integration circuit chips etc. are the field widely.
Description of drawings: accompanying drawing 1 is the structural representation of this product.
Accompanying drawing 2 is Schottky rectification characteristic test result figure of the phthalocyanine copper film of pectination aluminium gate and both sides.
Accompanying drawing 3 is source-drain electrode voltage V
DSAnd electric current I between source-drain electrode
DSBetween the variation relation schematic diagram.
Accompanying drawing 4 is grid-source bias voltage V
GSWith operating current I
DSTransfer characteristic curve concern schematic diagram.
Accompanying drawing 5 is under the operating state, grid current I
GAnd between source-drain electrode electric current I GS concern schematic diagram.
The specific embodiment of the present invention:
Embodiment 1:
Product of the present invention is to adopt vacuum vapour deposition to make, accompany the sub-micron vertical conduction raceway groove semiconductive aluminium gate organic semiconductor phthalocyanine copper film triode of organic semiconductor CuPc interlayer, its structure is followed successively by golden membranous layer, the CuPc rete, aluminum membranous layer, CuPc rete and golden membranous layer are altogether the lamination layer structure of five tunics.At bias voltage V
DS=2V, V
GSDuring=0V, current gain is β
0=683, working direct current I
DS=1.1mA/mm
2, because the thickness of semiconductive aluminium film is about 20nm, can think the operating current of Weimer triode of development, be to form by the two Schottky barrier gate regions territories of the charge carrier tunnelling CuPc/Al/CuPc of source emitter.Experimental result shows, the submicron organic semiconductor thin-film triode driving voltage is low, the control ability of grid voltage is extremely strong, working current density is big, be the unsaturated voltage current characteristics that is similar to the pin hole triode, therefore think that this product is an organic solid class vacuum triode, its DC characteristic is near the inorganic semiconductor polycrystalline silicon device.
The CuPc that the present invention adopts, have good chemical stability and thermal endurance, be typical intrinsic P organic semiconducting materials, the grid in the product of the present invention is the aluminum evaporation film, comes from the thickness that distance between the sample and evaporation time are controlled each layer evaporating film by adjusting aluminum evaporation.Source electrode adopts the gold evaporation film that becomes ohmic properties to contact with the CuPc evaporating film with drain electrode, production order is: at first make gold evaporation film source electrode on glass substrate 1, make ground floor CuPc evaporating film 2 then, make thin film aluminum grid 3 then, making second layer CuPc evaporating film 4, make gold evaporation film drain electrode 5 at last.The process conditions of making are, substrate temperature is a room temperature, generally about 20 ℃, manufacturing process of the present invention is finished under this temperature, the evaporating temperature exception, the evaporating temperature of CuPc is 400 ℃, the film thickness of the CuPc of both sides can be made comparisons by evaporation time and be controlled accurately about the aluminium gate, because evaporation rate is 3nm/min, the thickness upper strata of the CuPc of formation is 70 ± 5nm, lower floor is about 22-57 minute at the time of 130 ± 5nm, and the thickness of aluminium gate is 20 ± 10nm.
Claims (3)
1. submicron organic semiconductor thin-film triode, its composition comprises: glass substrate, it is characterized in that: the layer structure composite bed that has gold, CuPc, aluminium, CuPc, gold on the described glass substrate, the thickness of described aluminium is 20 ± 10nm, the thickness upper strata of CuPc is 70 ± 5nm, and lower floor is 130 ± 5nm.
2. submicron organic semiconductor thin-film triode according to claim 1, it is characterized in that: at first on described glass substrate, make the gold evaporation membrane electrode, make ground floor CuPc evaporating film then, make the aluminum evaporation film after finishing, at described aluminum evaporation film production second layer phthalocyanine copper film, make the gold evaporation film at last again.
3. submicron organic semiconductor thin-film triode according to claim 2, it is characterized in that: the evaporating temperature of making described phthalocyanine copper film is 400 ℃, evaporation rate is 3nm/min, time is 22-57 minute, the thickness upper strata of the CuPc that forms is 70 ± 5nm, and lower floor is 130 ± 5nm.
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| CN200610067520XA CN1897321B (en) | 2005-05-30 | 2006-02-27 | Submicron organic semiconductor thin-film triode |
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| CN200510010045 | 2005-05-30 | ||
| CN200510010045.8 | 2005-05-30 | ||
| CN200610067520XA CN1897321B (en) | 2005-05-30 | 2006-02-27 | Submicron organic semiconductor thin-film triode |
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| CN1897321B true CN1897321B (en) | 2011-01-12 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1534800A (en) * | 2003-03-28 | 2004-10-06 | 大连铁道学院 | Orgain semiconductor electroluminous triode and its manufacturing method |
| CN201100919Y (en) * | 2006-12-12 | 2008-08-13 | 哈尔滨理工大学 | Sub-micron organic semiconductor film audion |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1534800A (en) * | 2003-03-28 | 2004-10-06 | 大连铁道学院 | Orgain semiconductor electroluminous triode and its manufacturing method |
| CN201100919Y (en) * | 2006-12-12 | 2008-08-13 | 哈尔滨理工大学 | Sub-micron organic semiconductor film audion |
Non-Patent Citations (4)
| Title |
|---|
| 梁海峰,王东兴,薛严冰.酞菁铜薄膜有机静电感应三极管动作特性分析.大连铁道学院学报25 3.2004,25(3),71-73. |
| 梁海峰,王东兴,薛严冰.酞菁铜薄膜有机静电感应三极管动作特性分析.大连铁道学院学报25 3.2004,25(3),71-73. * |
| 王东兴.薄膜铝栅极有机半导体静电感应三极管的试制及动作特性.大连铁道学院学报24 3.2003,24(3),33-36. |
| 王东兴.薄膜铝栅极有机半导体静电感应三极管的试制及动作特性.大连铁道学院学报24 3.2003,24(3),33-36. * |
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