CN1893115A - Film transistor of driving organic light-emitting-diode and producing method - Google Patents
Film transistor of driving organic light-emitting-diode and producing method Download PDFInfo
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- CN1893115A CN1893115A CN 200510080490 CN200510080490A CN1893115A CN 1893115 A CN1893115 A CN 1893115A CN 200510080490 CN200510080490 CN 200510080490 CN 200510080490 A CN200510080490 A CN 200510080490A CN 1893115 A CN1893115 A CN 1893115A
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- polysilicon island
- dielectric layer
- insulating barrier
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Abstract
The thin film transistor for driving organic light emitting diode includes base plate, first polysilicon island, isolation layer, grid metal layer, dielectric layer with function of filtering light, and conductor layer. The first polysilicon island is formed on the base plate. Being formed on the base plate, the isolation layer covers the first polysilicon island. The grid metal layer is formed on the isolation layer. Being formed on the isolation layer, the said dielectric layer covers the grid metal layer. There are several contact holes on the dielectric layer. The said contact holes run through the dielectric layer and the isolation layer. Formed on the dielectric layer, the conductor layer through the said contact holes is contacted to the first polysilicon island.
Description
Technical field
The present invention relates to a kind of thin-film transistor and manufacture method thereof, relate in particular to a kind of colored filter that uses as the thin-film transistor and the manufacture method thereof of dielectric layer with the driving Organic Light Emitting Diode.
Background technology
Organic Light Emitting Diode (OLED) is widely used in various occasions with the usefulness as display assembly, in order to realize the image quality of high-fineness, and for fear of the decay (different aging) of different colours, present research direction has changed into integrates white organic LED and colored filter.
United States Patent (USP) is the structure that discloses a kind of Organic Light Emitting Diode No. 6515428, its profile as shown in Figure 1, wherein form a resilient coating 11 on the substrate 10, form a polysilicon island 12 on this resilient coating 11 again, form oxide layer 13 on this polysilicon island 12, form dielectric layer 14 again on this oxide layer 13, following layer 15 passes this dielectric layer 14 and is connected with this polysilicon island 12 with this oxide layer 13, form a passive layer 16 afterwards and be provided with a colored filter 17 on this dielectric layer 14 and in this passive layer 16, be connected with this conductor layer 15 with a conductor layer 18 more afterwards, on this conductor layer 18, form an Organic Light Emitting Diode 19 at last again.In this kind structure, owing to need to form again in addition a colored filter on the dielectric layer, thus make comparatively complexity of manufacturing process, and component thickness and cost all can improve.
Moreover United States Patent (USP) discloses the technology of general thin-film transistor for No. 6037195.The profile of this thin-film transistor as shown in Figure 2; wherein on a substrate 20, form a resilient coating 21; then on this resilient coating 21, form two polysilicon islands 22; form an insulating barrier 23 again on this resilient coating 21 and cover these polysilicon islands 22; on this insulating barrier 23, form gate metal afterwards; then form an oxide layer 24 again on this insulating barrier 23; passing this oxide layer 24 with a conductor layer 25 then is connected with these polysilicon islands 22 with this insulating barrier 23; deposit a protective layer 26 afterwards on this oxide layer 24, be connected with this conductor layer 25 with another conductor layer 27 more at last.Under this kind structure, often need multiple tracks light shield technology, and make the making of assembly thicken.
Therefore, needed is a kind of thin-film transistor, and it can overcome the shortcoming of prior art, and the present invention can satisfy this demand.
Summary of the invention
Main purpose of the present invention provides a kind of thin-film transistor and manufacture method thereof, it is to use the material with filter effect as dielectric layer, to reach color filter sheet integrated in this thin-film transistor, so can reach the purpose that reduces cost and simplify production procedure.
Secondary objective of the present invention provides a kind of thin-film transistor and manufacture method thereof, it can use dielectric layer with different colours filter effect and the solid color of arranging in pairs or groups (white light) Organic Light Emitting Diode, to eliminate when using the Organic Light Emitting Diode of different colours, have the defective of different life decline phases.
For reaching above-mentioned purpose, the present invention provides a kind of thin-film transistor that drives Organic Light Emitting Diode, and it comprises:
Substrate;
First polysilicon island is formed on this substrate;
Insulating barrier is formed on this substrate and covers this first polysilicon island;
Gate metal layer is formed on this substrate and covers on this insulating barrier;
Dielectric layer with filtering functions is formed on this insulating barrier and covers this gate metal layer, and this dielectric layer offers several contact holes, and these contact holes run through this dielectric layer and this insulating barrier; And
Conductor layer is formed on this dielectric layer, and contacts with this first polysilicon island respectively via these contact holes.
Preferably, this first polysilicon island mixes for the P type or the doping of N type.
Preferably, if this first polysilicon island mixes for the P type, then also can be provided with second polysilicon island on this substrate, this insulating barrier covers this second polysilicon island and this conductor layer also contacts with this second polysilicon island by these contact holes, and this second polysilicon island mixes for the N type.
For reaching above-mentioned purpose, the present invention also provides a kind of method of manufacturing thin film transistor, and it comprises:
(a) provide a substrate;
(b) on this substrate, form first polysilicon island and second polysilicon island;
(c) in the implanting ions mode this first polysilicon island being carried out the N type mixes;
(d) on this substrate, form an insulating barrier, and this insulating barrier covers this first polysilicon island and this second polysilicon island;
(e) forming first grid metal and second grid metal respectively with respect to this first polysilicon island and this second polysilicon island part on this insulating barrier;
(f) once more this first polysilicon island being carried out the N type in the implanting ions mode mixes;
(g) in the implanting ions mode this second polysilicon island being carried out the P type mixes;
(h) on this insulating barrier, form dielectric layer, and this dielectric layer covers this first grid metal and this second grid metal with filtering functions;
(i) on this dielectric layer, offer several contact holes, make these contact holes run through this dielectric layer and this insulating barrier and be communicated to this first polysilicon island and this second polysilicon island respectively;
(j) on this dielectric layer, form a conductor layer; And
(k) this conductor layer of etching is to form required circuit pattern.
For reaching above-mentioned purpose, the present invention also provides another kind of method of manufacturing thin film transistor, and it comprises:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form insulating barrier, and this insulating barrier covers this polysilicon island;
(d) forming gate metal on this insulating barrier with respect to this polysilicon island part;
(e) in the implanting ions mode this polysilicon island being carried out the P type mixes;
(f) on this insulating barrier, form a dielectric layer with filtering functions, and this dielectric layer covers this gate metal;
(g) on this dielectric layer, offer several contact holes, make these contact holes run through this dielectric layer and this insulating barrier and be communicated to this polysilicon island;
(h) on this dielectric layer, form a conductor layer; And
(i) this conductor layer of etching is to form required circuit pattern.
Preferably, this substrate is a light-permeable.
Preferably, this substrate is selected from glass, plastics, quartz, silicon wafer and stainless steel.
Preferably, this conductor layer is made by metal.
Understand and approval for having for structure of the present invention, effect and method thereof further, cooperate diagram to describe in detail now as after.
Description of drawings
Fig. 1 is the drawing in side sectional elevation of prior art organic LED structure;
Fig. 2 is the drawing in side sectional elevation of prior art thin-film transistor structure;
Fig. 3 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 4 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 5 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 6 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 7 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 8 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Fig. 9 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Figure 10 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Figure 11 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Figure 12 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Figure 13 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows first embodiment;
Figure 14 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 15 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 16 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 17 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 18 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 19 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 20 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 21 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment;
Figure 22 is the flow chart of method of manufacturing thin film transistor of the present invention, and it shows second embodiment; And
Drawing in side sectional elevation when Figure 23 is connected with Organic Light Emitting Diode for P type thin-film transistor of the present invention.
Drawing reference numeral explanation: 10 substrates; 11 resilient coatings; 12 polysilicon islands; 13 oxide layers; 14 dielectric layers; 15 conductor layers; 16 passive layers; 17 colored filters; 18 conductor layers; 19 Organic Light Emitting Diodes; 20 substrates; 21 resilient coatings; 22 polysilicon islands; 23 insulating barriers; 24 oxide layers; 25 conductor layers; 26 protective layers; 27 conductor layers; 30 substrates; 31 polysilicon islands; 310 electrode districts; 311 electrode districts; 312-N
-Doped region; 313-N
-Doped region; 32 polysilicon islands; 320 electrode districts; 321 electrode districts; 33 insulating barriers; 34 gate metals; 35 gate metals; 36 dielectric layers; 37 contact holes; 38 contact holes; 39 contact holes; 40 contact holes; 41 conductor layers; 50 substrates; 51 polysilicon islands; 510 electrode districts; 511 electrode districts; 52 insulating barriers; 53 gate metals; 54 dielectric layers; 55 contact holes; 56 contact holes; 57 conductor layers; 58 dielectric layers; 59 Organic Light Emitting Diodes; 60 electrode layers.
Embodiment
Describe the present invention for reaching employed technological means of purpose and effect hereinafter with reference to the accompanying drawing of enclosing, and the cited embodiment of the following drawings only is an aid illustration, in order to understanding, but technological means of the present invention is not limited to cited accompanying drawing.
Fig. 3 to Figure 13 is a signal method of manufacturing thin film transistor of the present invention, and it is first embodiment, openly can be used for driving a complementary method of manufacturing thin film transistor of Organic Light Emitting Diode in the present embodiment.
In Fig. 3, at first provide a substrate 30.
Then on this substrate 30, form a polysilicon island 31 and a polysilicon island 32 (the first road light shield technology) respectively, as shown in Figure 4.
Secondly, in the implanting ions mode this polysilicon island 31 is carried out N type (N
+) mix (the second road light shield technology), make these polysilicon island 31 two ends form electrode district 310 and electrode district 311, as shown in Figure 5.
Then, form an insulating barrier 33 on this substrate 30, this insulating barrier 33 covers this polysilicon island 31 and this polysilicon island 32, as shown in Figure 6.
In Fig. 7, on this insulating barrier 33, form a gate metal 34 and another gate metal 35 (the 3rd road light shield technology) respectively in this polysilicon island 31 and these polysilicon island 32 parts afterwards corresponding.
Then, carry out implanting ions, once more this polysilicon island 31 is carried out N type (N in self-aligned (self-align) mode
-) mix, make this electrode district 310 form N respectively with these electrode district 311 next doors
-Doped region 312 and N
-Doped region 313, as shown in Figure 8.
Afterwards, in the implanting ions mode this polysilicon island 32 is carried out P type (P once more
+) mix (the 4th road light shield technology), make these polysilicon island 32 two ends form electrode district 320 and electrode district 321, as shown in Figure 9.
Then form a dielectric layer 36 with filtering functions on this insulating barrier 33, this dielectric layer 36 can use colored filter to make, and this dielectric layer 36 covers this gate metal 34 and this gate metal 35, as shown in figure 10.
Then, on this dielectric layer 36, offer contact hole 37, contact hole 38, contact hole 39 and contact hole 40 (the 5th road light shield technology), this contact hole 37, contact hole 38, contact hole 39 and contact hole 40 run through this dielectric layer 36 and are communicated to this polysilicon island 31 and this polysilicon island 32 with this insulating barrier 33 respectively, as shown in figure 11.
Then, on this dielectric layer 36, form a conductor layer 41, make it cover this dielectric layer 36 fully and fill up this contact hole 37, contact hole 38, contact hole 39 and contact hole 40, as shown in figure 12.
At last, this conductor layer 41 of etching (the 6th road light shield technology) is to form required circuit pattern, as shown in figure 13.
So, only need to use six road light shield technologies, can obtain having the complementary thin-film transistor structure of filtering functions.
Figure 14 to Figure 22 is a signal method of manufacturing thin film transistor of the present invention, and it is second embodiment, openly can be used on a P type method of manufacturing thin film transistor that drives Organic Light Emitting Diode in the present embodiment.
In Figure 14, at first provide a substrate 50.
Then on this substrate 50, form a polysilicon island 51 (the first road light shield technology), as shown in figure 15.
Secondly, form an insulating barrier 52 on this substrate 50, this insulating barrier 52 covers this polysilicon island 51, as shown in figure 16.
In Figure 17, on this insulating barrier 52, form a gate metal 53 (the second road light shield technology) in these polysilicon island 51 parts afterwards corresponding.
Then, carry out implanting ions in self-aligned (self-align) mode, meaning is promptly carried out P type (P to this polysilicon island 51
+) mix, make these polysilicon island 51 two ends form electrode district 510 and electrode district 511, as shown in figure 18.
Then form the dielectric layer 54 with filtering functions on this insulating barrier 52, this dielectric layer 54 can use colored filter to make, and these dielectric layer 54 these gate metals 53 of covering, as shown in figure 19.
Come, offer contact hole 55 and contact hole 56 (the 3rd road light shield technology) on this dielectric layer 54, this contact hole 55 and contact hole 56 run through this dielectric layer 54 and are communicated to this polysilicon island 51 with this insulating barrier 52, as shown in figure 20.
Then, on this dielectric layer 54, form a conductor layer 57, make it cover this dielectric layer 54 fully and fill up this contact hole 55 and contact hole 56, as shown in figure 21.
At last, this conductor layer 57 of etching (the 4th road light shield technology) is to form required circuit pattern, as shown in figure 22.
So, only need to use four road light shield technologies, can obtain having the P type thin-film transistor structure of filtering functions.
Please refer to Figure 23 again, drawing in side sectional elevation when it is connected with Organic Light Emitting Diode for P type thin-film transistor of the present invention, the element numbers of Figure 23 all is element numbers of continuing to use in the second embodiment of the invention, so the assembly of same components symbol representative does not repeat them here.In the figure, conductor layer 57 is as electrode under the Organic Light Emitting Diode 59, be provided with dielectric layer 58 on this conductor layer 57, this conductor layer 57 is connected with this Organic Light Emitting Diode 59, and also be connected with an electrode layer 60 on this Organic Light Emitting Diode 59, this electrode layer 60 is as electrode on this Organic Light Emitting Diode 59.
In second embodiment of the invention, can also similar fashion make N type thin-film transistor, it also can reach the purpose that reduces light shield, reduces processing step and reduce cost.This conductor layer is preferable again is made of metal, and this substrate is to select in the light-permeable and the group that can be made up of glass, plastics, quartz, silicon wafer and stainless steel.
In addition, by need use the Organic Light Emitting Diode of three kinds of colors of RGB to carry out mixed light in prior art, regular meeting under this kind situation causes colour cast because the life cycle of Organic Light Emitting Diode is different; And thin-film transistor structure of the present invention is to use the Organic Light Emitting Diode of solid color (for example white light) of arranging in pairs or groups of the dielectric layer with different colours filter effect, so can eliminate the problem that traditional three colour organic luminous diodes have different decays rate.
Hence one can see that, the thin-film transistor that this patent proposed only need use road, four roads to six light shield technology to finish, can significantly reduce cost and simplify production procedure, and can avoid when using the Organic Light Emitting Diode of different colours, have the defective of different life decline phases, have the product of competitiveness for this reason in the technical field.
The above only is preferred embodiment of the present invention, can not with the scope implemented of qualification the present invention.Promptly the equalization of doing according to claim of the present invention generally changes and modifies, and all should still belong in the scope that patent of the present invention contains.
Claims (10)
1. thin-film transistor, its feature, comprise:
One substrate;
One first polysilicon island is formed on this substrate;
One insulating barrier is formed on this substrate and covers this first polysilicon island;
One gate metal layer is formed on this substrate and covers on this insulating barrier;
One has the dielectric layer of filtering functions, is formed on this insulating barrier and covers this gate metal layer, and this dielectric layer offers several contact holes, and these contact holes run through this dielectric layer and this insulating barrier; And
One conductor layer is formed on this dielectric layer, and contacts with this first polysilicon island respectively via these contact holes.
2. thin-film transistor as claimed in claim 1, its feature is being that the P type mixes at, this first polysilicon island.
3. thin-film transistor as claimed in claim 2, its feature, also be provided with second polysilicon island on this substrate, this insulating barrier covers this second polysilicon island and this conductor layer also contacts with this second polysilicon island by these contact holes, and this second polysilicon island mixes for the N type.
4. thin-film transistor as claimed in claim 1, its feature is being that the N type mixes at, this first polysilicon island.
5. thin-film transistor as claimed in claim 1, its feature, this substrate is the light-permeable type.
6. thin-film transistor as claimed in claim 1, its feature, this substrate is selected from glass, plastics, quartz, silicon wafer and stainless steel.
7. method of manufacturing thin film transistor comprises:
(a) provide a substrate;
(b) on this substrate, form first polysilicon island and second polysilicon island;
(c) in the implanting ions mode this first polysilicon island being carried out the N type mixes;
(d) on this substrate, form insulating barrier, and this insulating barrier covers this first polysilicon island and this second polysilicon island;
(e) forming first grid metal and second grid metal respectively on this insulating barrier in this first polysilicon island and this second polysilicon island part relatively;
(f) once more this first polysilicon island being carried out the N type in the implanting ions mode mixes;
(g) in the implanting ions mode this second polysilicon island being carried out the P type mixes;
(h) on this insulating barrier, form dielectric layer, and this dielectric layer covers this first grid metal and this second grid metal with filtering functions;
(i) on this dielectric layer, offer several contact holes, make these contact holes run through this dielectric layer and this insulating barrier and be communicated to this first polysilicon island and this second polysilicon island respectively;
(j) on this dielectric layer, form conductor layer; And
(k) this conductor layer of etching is to form the required circuit pattern and the bottom electrode of Organic Light Emitting Diode.
8. method of manufacturing thin film transistor as claimed in claim 7, its feature, this substrate is selected from glass, plastics, quartz, silicon wafer and stainless steel.
9. method of manufacturing thin film transistor, its feature: comprise:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form insulating barrier, and this insulating barrier covers this polysilicon island;
(d) forming gate metal on this insulating barrier in this polysilicon island part relatively;
(e) in the implanting ions mode this polysilicon island being carried out the P type mixes;
(f) on this insulating barrier, form dielectric layer, and this dielectric layer covers this gate metal with filtering functions;
(g) on this dielectric layer, offer several contact holes, make these contact holes run through this dielectric layer and this insulating barrier and be communicated to this polysilicon island;
(h) on this dielectric layer, form conductor layer; And
(i) this conductor layer of etching is to form the required circuit pattern and the bottom electrode of Organic Light Emitting Diode.
10. method of manufacturing thin film transistor as claimed in claim 9, its feature, this substrate is selected from glass, plastics, quartz, silicon wafer and stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100804901A CN100477276C (en) | 2005-07-05 | 2005-07-05 | Film transistor for driving organic light-emitting-diode and producing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100804901A CN100477276C (en) | 2005-07-05 | 2005-07-05 | Film transistor for driving organic light-emitting-diode and producing method thereof |
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| CN1893115A true CN1893115A (en) | 2007-01-10 |
| CN100477276C CN100477276C (en) | 2009-04-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130147A (en) * | 2009-12-03 | 2011-07-20 | 索尼公司 | Display, method of manufacturing display and electronic device |
| CN109037343A (en) * | 2018-06-08 | 2018-12-18 | 武汉华星光电半导体显示技术有限公司 | A kind of bilayer channel thin-film transistor and preparation method thereof, display panel |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000662B (en) * | 2012-12-12 | 2014-06-18 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
-
2005
- 2005-07-05 CN CNB2005100804901A patent/CN100477276C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130147A (en) * | 2009-12-03 | 2011-07-20 | 索尼公司 | Display, method of manufacturing display and electronic device |
| CN102130147B (en) * | 2009-12-03 | 2013-09-18 | 索尼公司 | Display, method of manufacturing display and electronic device |
| CN109037343A (en) * | 2018-06-08 | 2018-12-18 | 武汉华星光电半导体显示技术有限公司 | A kind of bilayer channel thin-film transistor and preparation method thereof, display panel |
| CN109037343B (en) * | 2018-06-08 | 2021-09-24 | 武汉华星光电半导体显示技术有限公司 | Double-layer channel thin film transistor, preparation method thereof and display panel |
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| Publication number | Publication date |
|---|---|
| CN100477276C (en) | 2009-04-08 |
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