CN1890670A - Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data - Google Patents

Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data Download PDF

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CN1890670A
CN1890670A CN 200480035963 CN200480035963A CN1890670A CN 1890670 A CN1890670 A CN 1890670A CN 200480035963 CN200480035963 CN 200480035963 CN 200480035963 A CN200480035963 A CN 200480035963A CN 1890670 A CN1890670 A CN 1890670A
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graticule
area
pattern data
printing
zones
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CN100416574C (en
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C·黑斯
熊亚霖
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KLA Tencor Technologies Corp
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KLA Tencor Technologies Corp
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Abstract

Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Description

Simulation graticule pattern data, inspection graticule pattern data and generation are used to detect the method for graticule pattern data technology
Technical field
The present invention generally relates to a kind of method that graticule pattern data, inspection graticule pattern data and generation are used to detect graticule pattern data technology of simulating.Some embodiment relates to computer implemented method, comprises that identification has with regard to the printing of the second area in the graticule pattern data the first area in the graticule pattern data of the more responsive printing of process reform.
Background technology
Below explanation and example should not be considered to prior art because they are included in these chapters and sections.
Designing integrated circuit (IC) comprises producing and comprises configuration and the coupling summary design with the independent device of carrying out specific function.Because IC becomes increasingly sophisticated, the complicacy of the design of IC is also increasing.For example, IC totally trends towards having reduced size and big current densities speed and other characteristic to improve IC.
Can use known in the industry any method or system development IC design, for example electric design automation (EDA), computer-aided design (CAD) (CAD) and other IC design software.Can use these method and systems to produce circuit pattern database from the IC design.The circuit pattern database comprises the data that each IC layer shown multiple pattern.The data of representing each IC layer pattern are used to determine the pattern of a plurality of graticules.Graticule or " mask " are used to imprint lithography pattern transformation is become the resist layer on the wafer.Term " graticule " and " mask " use in this article interchangeably.
The graticule pattern totally comprises a plurality of polygons that limit pattern characteristics on the graticule.Typically, these polygons are totally by their size and and the position of graticule and limiting.Every graticule is used to make wherein one deck of all IC layers.The IC layer can comprise contacts patterns in knot pattern in the Semiconductor substrate for example, gate dielectric pattern, gate electrode pattern, the internal layer medium and the interconnection pattern on the metal level.
Especially, graticule is used to Butut resist layer in the imprint lithography step, is used to form IC feature on the wafer through the resist layer of Butut then.Therefore, the feature through Butut that is formed on the graticule and is transferred on the wafer reflects contained characteristic attribute in the IC design.In other words, can based on or use the feature be formed on the graticule to form each element of aforesaid IC.Therefore the complicacy of IC design has manufacturing and graticule inspection is had direct influence.
Therefore, along with the increase of IC design complexities, successful graticule manufacturing becomes more difficult.For example, along with reducing of IC characteristic dimension and feature pitch, size and feature pitch on the graticule reduce equally.Like this, because the limitation of graticule manufacturing process for example, these features are formed on become more difficult on the graticule.In addition, because graticule is checked the limitation of step, these feature inspections are become difficult more.In addition, as known in the industry, along with size and spacing reduce, the difficulty of successfully duplicating these features on wafer increases.
Because the key player that graticule is played the part of in the semiconductor manufacturing for the semiconductor manufacturing of success, guarantees that it is crucial that graticule is made (thereby graticule is used for producing desirable image on wafer) satisfactorily.Generally speaking, check in the technology that typically optical image and the baseline image with graticule compares at graticule.The baseline image can produce from the circuit pattern data or adjoining the chip from graticule produces.For any method, the optical image feature is analyzed and compared with the individual features of baseline image.Subsequently each feature difference and single threshold value are compared.If the optical image feature surpasses preset threshold value with respect to the variation of baseline characteristic, then define a defective.
Although traditional graticule inspection provides enough accuracy of detection levels for some application, yet other occasion needs higher susceptibility or lower threshold value (with defect recognition), and other is used needs undemanding, higher threshold level.Because traditional detection is analyzed all features of given type graticule with same threshold and analytical algorithm, so may too strictly check some features and strictly check further feature inadequately.
The electric key feature of IC typically comprises the grid of semiconductor transistor device.Be that grid width on the graticule need be in relatively little error allowance produces the respective gates width to make the IC device of correctly realizing function on circuit pattern.If threshold value is established De Taigao, these crucial area of grid can't be subjected to checking fully.On the contrary, further feature (width that for example interconnects between the area of grid) does not resemble degree ground the area of grid width influence function of IC and so need not to resemble and strictly be subjected to an examination the further feature.If establish threshold value too low then too much key feature can be defined as defective, so check result will be difficult to explain and/or the computational resource overload.
Put it briefly, if too strictly check the graticule zone, traditional inspection system can be wasted precious resources, and unreliable enough narrow examinations is carried out in other zone.In other words, above-mentioned check system can't detect the defective in the electric critical area reliably and can vainly check electric non-critical areas, and some bigger defective can not cause problem yet in electric non-critical areas.Traditional inspection system and technology can't be distinguished between the electric key of graticule and non-critical areas.From another kind of approach, traditional design archives (for example electronics graticule or integrated circuit information) can't transmit the IC deviser fully about the circuit tolerance limit with produce the intention of IC device size for graticule author system, graticule check system and final chip checking system.
At least for these reasons, worked out some inspection methods, they check graticule by be intended to change strict degree ground based on the IC deviser.The example of these methods is described in people's such as people's such as Glasser No. 6529621 United States Patent (USP)s and Glasser 6748103 United States Patent (USP)s, and these documents are incorporated by reference herein as setting forth in full.Like this, make the relevant judgement that is used for detecting the suitable strict degree of defective on the graticule based on the electric importance of the feature in the graticule pattern data.
These methods have accuracy, meaningfulness, practicality and the output of checking from the graticule that improves in essence.Yet these methods do not consider to be used for further to increase multiple other variation of the graticule pattern data of graticule check the value.For example, determining suitable strict degree for data when, do not consider the printing of graticule pattern data based on the inspection method of deviser's intention.Especially the various attributes of graticule pattern data (for example size etc.) difficulty that will determine accurately to print or duplicate as required the graticule pattern data.A kind of method of accurately determining the difficulty of printing graticule pattern data is the process window (the graticule pattern data that for example has narrow process window is than the more difficult printing of graticule pattern data with wide process window) by being used for the graticule pattern data.Like this, may require more strictly to check the zone of graticule pattern data and more be difficult to realize printing than those less graticule pattern data zones of printing difficulty.Although the electric critical area of some of IC also may be difficult to printing, the graticule inspection method of current use is not adjusted the strict degree of graticule inspection method based on the printing of graticule pattern data zones of different.
Therefore, it is favourable working out a kind of method that is used for producing the technology of checking the graticule pattern data, thereby when considering each regional printing of graticule pattern data, checks graticule pattern data and/or simulation graticule pattern data.
Summary of the invention
One embodiment of the present of invention relate to the computer implemented method that a kind of generation is used to detect the technology of graticule pattern data.This method is included in the graticule pattern data and discerns the first area, and in the graticule pattern data, the printing of first area more is sensitive to the variation of technological parameter than the printing of second area.In one embodiment, the area of first area can have the area that is approximately equal to a feature in the graticule pattern data.This method also comprises gives first area and second area with one or more inspection parameters, thereby checks the first area with the susceptibility higher than second area in process.
The printing in first and second zones can be the printing in first and second zones on the graticule.In this embodiment, technological parameter comprises the graticule fabrication process parameters.Perhaps, the printing in first and second zones is the printings in first and second zones on the wafer.In this embodiment, technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
In another embodiment, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the process window narrower than second area.In other embodiments, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the mask error improvement factor (MEEF) higher than second area.
In certain embodiments, this method also is included as the generation of graticule pattern data and reexamines technology.Generation reexamines technology and comprises and reexamine with one or more that parameter is given the first area and second area reexamines the first area to use the susceptibility higher than second area during reexamining processing.Each embodiment of said method can comprise any other step described herein.
Another embodiment relates to the computer utility method that is used to check the graticule pattern data.This method comprises the first area in the identification graticule pattern data.In the graticule pattern data, the printing of first area more is sensitive to the variation of technological parameter than the printing of second area.In one embodiment, the area approximation of first area equals the area of a feature in the graticule pattern data.This method also comprise use than second area more high sensitive check the first area.
In one embodiment, the printing in first and second zones can be the printing in first and second zones on the graticule.In this embodiment, technological parameter comprises the graticule fabrication process parameters.In another embodiment, the printing in first and second zones is the printings in first and second zones on the wafer.In this embodiment, technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
In certain embodiments, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the process window narrower than second area.In another embodiment, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has than the higher MEEF of second area.
In one embodiment, check that first and second zones comprise the printing defects that inspection will be produced by first and second zones of graticule pattern data.In another embodiment, can before making graticule, carry out inspection to first and second zones with the graticule pattern data.In this embodiment, this method comprises based on check result change graticule pattern data.In another embodiment, this method comprises that for the susceptibility of changes in process parameters how each regional printing of determining the graticule pattern data.In this embodiment, checking that first and second zones comprise uses based on the susceptibility of each regional printing and checks each zone of graticule pattern data.Each embodiment of said method can comprise any other step described herein.
Another embodiment relates to the method that is used to simulate the graticule pattern data.This method comprises the first area in the identification graticule pattern data.In the graticule pattern data, the printing of first area more is sensitive to the variation of technological parameter than the printing of second area.This method also comprises to how printing the graticule pattern data to be simulated.Carry out the simulation of first area and second area with one or more different analog parameters, thereby the first area is simulated with the fidelity higher than second area.
In one embodiment, the printing in first and second zones can be the printing in first and second zones on the graticule.In this embodiment, technological parameter comprises the graticule fabrication process parameters.In other embodiments, the printing in first and second zones is the printings in first and second zones on the wafer.In this embodiment, technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
In certain embodiments, to how to print the graticule pattern data simulate comprise to as how different technical parameters printing graticule pattern data simulate.In these embodiments, one or more different analog parameters comprise the sampling of the different technical parameters of the first area higher than second area.In another embodiment, one or more different analog parameters comprise the pixel than the first area of the bigger quantity of second area.
This method also comprises will be by the printing defects of graticule pattern data generation based on mock survey.In addition, this method also comprises based on simulation change graticule pattern data.In addition, this method comprises whole graticule pattern data is simulated.Each embodiment of said method comprises any other step described herein.
Another embodiment relates to and comprises that the mounting medium that can be executed in the programmed instruction on the computing machine is to carry out any computer utility method of describing herein.Other embodiment relates to the system that is configured to carry out any computer utility method as herein described.This system comprises and is configured to execution of program instructions to carry out the processor of one or more computer utility methods as herein described.In one embodiment, this system can be an autonomous system.In another embodiment, this system is a part that is coupled in check system.In different embodiment, system is coupled in the part that defective reexamines system.In another embodiment, system can be coupled in manufacturing (fab) database.This system can by such as lead, cable, wireless propagation path and/or network coupled in check system, reexamine system or manufacturing database.Transmission medium can comprise " wired " and " wireless " part.
Description of drawings
For those skilled in that art, by below consulting to the detailed description of preferred embodiment and in conjunction with the accompanying drawings, other advantage of the present invention will become more obvious, wherein:
Fig. 1 is the process flow diagram of an example of carrying out the method for some steps according to embodiment described herein;
Fig. 2 is the vertical view of an example that the zones of different of graticule pattern data is shown;
Fig. 3 illustrates the curve map that the zones of different that how to make the graticule pattern data has an example of different printing susceptibilitys and different process window;
Fig. 4 illustrates an example that is used for different analog parameters are given the database structure of graticule pattern data zones of different;
Fig. 5 illustrates and is used for difference is checked that parameter gives an example of the database structure of graticule pattern data zones of different;
Fig. 6 illustrates and is used for difference is reexamined the example that parameter is given the database structure of graticule pattern data zones of different;
Fig. 7 is the synoptic diagram of side view that an embodiment of the system that can be used for carrying out one or more computer utility methods as herein described is shown.
Although the present invention can have various corrections and version, its special embodiment illustrates by accompanying drawing and is elaborated in this article.Accompanying drawing can be disproportionate.Yet should be appreciated that accompanying drawing and detailed description thereof are not intended to the present invention is limited to particular forms disclosed, on the contrary, the present invention covers all correction thing, equivalent and alternatives that drop in the spirit and scope of the invention, is defined by claims.
Embodiment
Term " graticule " and " mask " use in this article interchangeably.Graticule generally comprises transparent substrate, for example glass, borosilicate glass with and on be formed with the molten silicon of opaque material.Graticule can comprise the additional materials that is formed under the opaque material, for example bonding coat.In addition, graticule comprises the additional materials that is formed on the opaque material top, for example bottom antireflective coating, resist (or " photoresist ") and top anti-reflective layer.The zone of useful etch in transparent substrates replaces transparent region.
The graticule of number of different types is known in the industry, and term graticule used herein is intended to comprise all types of graticules.For example, the term graticule refers to dissimilar graticules, including, but not limited to bright territory (clear-field) graticule, dark territory (dark-field) graticule, binary graticule, phase shifting mask (PSM), alternative P SM, decay or partly transfer PSM and ternary decay PSM.Bright territory graticule has transparent territory or background area, and dark territory graticule has opaque territory or background area.The binary graticule is the graticule with transparent or opaque cloth graph region.Binary mask is different from and comprises the only phase shifting mask of local light-transmissive film (PSM), and one type can comprise that part printing opacity (film) and these graticules are commonly referred to as half and transfer or embedded phase shift graticule.If phase shift material is placed on the bright domain space that replaces of graticule, this graticule is called as alternative P SM, ALT PSM or Levenson PSM.What a kind of phase shift material that puts on arbitrary placement's pattern was called as decay partly transfers PSM, and the PSM that partly transfers of this decay can be by replacing opaque material to make generation with local light-transmissive film or " half transfers " film.Ternary decay PSM is the attenuating PSM that also comprises complete opaque feature.
Graticule as herein described can comprise and also can not comprise as sealing graticule surface so that it is not subjected to the particulate that suspends in the air and the optical clear film of other kind dirt influence.Term " graticule " also is used to refer to comprise the graticule of optical proximity correction (OPC) feature.By reducing optics becomes to reduce to use the image of graticule printing with the OPC characteristic Design near effect degree of distortion.Term " optics is near effect " refers to the print characteristics lateral dimension that the proximity owing to further feature on the graticule causes or the variation of shape substantially.Can be by determining since the distortion that optics proximity effect causes determine this class effect and change feature on the graticule to compensate this class distortion.
Such as the resolution of OPC and phase shifting mask (PSM) develop skill (RET) be applied to integrated circuit (IC) design more and more feature is printed onto than on the littler device wafer of the light wavelength that is used as exposure source.RET generally comprises additional for the design additional features that comprises sub-sub-resolution assist feature (SRAF) and serif, and consequently the layout on photomask or the graticule becomes extreme complicated.Whether the RET feature correctly is printed onto this verification that graticule and SRAF are not printed in wafer but principal character correctly is printed on the wafer and is called more and more difficult task.In addition, will cause the further distortion of the final image of wafer layer such as the optical effect of mask error improvement factor (MEEF).MEEF always is defined by being printed in the ratio of key feature and the critical size that is formed at the structure on the graticule in the resist layer.
Term used herein " wafer " always refers to the substrate that formed by semiconductor or non-semiconductor material.This based semiconductor or non-semiconductor examples of material including, but not limited to, monocrystalline silicon, gallium arsenide and indium phosphide.These substrates can obtain and/or handle with semiconductor manufacturing facility publicly.
Wafer comprises the one or more layers that are formed on the substrate.For example, these the layer including, but not limited to, resist layer, dielectric material and conductor material." resist layer " comprises the material that is formed by optical lithography technology, electron beam lithography technology or X ray lithography technique Butut.The example of dielectric material can including, but not limited to, silicon dioxide, silicon nitride, silicon oxynitride and titanium nitride.Other example of dielectric material comprises " low k " dielectric material, for example from Applied Materials Inc.Santa Clara, the BLACK DIAMOND that Califonia fetches TMAnd from Novellus Systems, Inc, the CORAL that San Jose, California fetch TMAnd such as " ultralow k " dielectric material of " xerogel " and such as " high k " dielectric material of tantalum pentoxide.Conductive material is including, but not limited to aluminium, polysilicon and copper in addition.
Can carry out Butut to the one or more layers that are formed on the wafer.For example, wafer comprises a plurality of chips, and each chip has Butut feature again.To the formation of this class material layer with handle the semiconductor devices that finally causes finished product.Like this, wafer comprises the substrate of all layers that do not form the finished product semiconductor devices on it or forms the substrate of all layers of finished product semiconductor devices on it.Term " semiconductor devices " can use interchangeably with term " IC " in this article.In addition, other device such as micro electronmechanical (MEMS) device also can be formed on the wafer.
Consult accompanying drawing now, Fig. 1 illustrates an example that carries out the method for one or more steps according to embodiment described herein.Notice that step shown in Figure 1 is not to realize that this method is necessary.One or more steps can be saved or add in the method shown in Figure 1, and can in the scope of embodiment, realize this method.
Method shown in Figure 1 always illustrates each step of using graticule pattern data 10 performed.Can form graticule pattern data 10 by known in the industry any way.The graticule pattern data is determined to be printed on the wafer to form the structure such as the semiconductor devices of IC.Therefore the graticule pattern data has also defined the structure that is printed on the graticule that is used for printed wafers.
The zones of different of graticule pattern data has different electric key, and as people's such as Glasser No. 6529621 United States Patent (USP)s and No. 6748103 United States Patent (USP)s were described, these documents had been incorporated as a reference as the full text parameter.For example, that the zone that comprises the graticule pattern data of transistor arrangement can be considered as electric key and graticule pattern data zone that will comprise interconnection structure is considered as non-electric key.
The zones of different of graticule pattern data also has different printing characteristics.For example, some zone of graticule pattern data comprises than other zone of graticule pattern data and is difficult to be printed in feature on the graticule more.Fig. 2 illustrates two examples in this zone.Feature 12 in the zone 14 of graticule pattern data is transistorized grid structures.Because grid width will be determined transistorized speed largely, therefore the minimum dimension with the graticule printing generally is the size of grid structure.Therefore, feature 12 typically has than printing with the reduced size on the graticule of the further feature of graticule (for example feature 16 in the zone 18), and it can be a test structure or such as other structure of interconnection structure.
In addition, owing to determine the importance of the grid structure of transistor and IC characteristic, the grid structure that is printed in graticule also comprises SRAF 20, and it is configured the size and dimension that is printed in the grid structure on the wafer with raising as described above.Be used for the graticule pattern data is printed in the resolution of the lithographic system on the wafer because the size of SRAF is designed to be lower than, SRAF is between the minimal characteristic that will be manufactured on the graticule.Therefore, grid structure (grid structure that especially comprises SRAF) generally also is in the middle of the difficult structure that will print in the graticule pattern data.Although grid structure also be electric key and therefore be defined as crucially by above-mentioned deviser's intention method, be appreciated that not every electric key character all has printing importance, vice versa.
Because printing SRAF and comprise the difficulty of the structure of SRAF, SRAF can be on producing on the graticule than graticule the more printing defects of other structure.Defective in the print structure on " printing defects " used herein index line (or the wafer in another background), for example excessive corners, dissatisfied size etc.In addition, wherein can print the process window (or process parameters range) of SRAF structure satisfactorily may be narrower than other structure that comprises the non-SRAF that contains structure.Yet,, therefore may wish to use the susceptibility lower to check the SRAF structure than other non-SRAF structure owing to be not printed on the wafer but can improve process window.In addition, SRAF for check and make both be difficulty and therefore produce many disagreeable defectives, unless be not detected (desensed).
The embodiment of method described herein comprises the zones of different (for example first area and second area) that has different printing in the identification graticule pattern data.For example, as mentioned above, the printing in zone 14 more is sensitive to the variation of technological parameter probably than the printing in zone 18.In other words, zone 14 may have more faulty printing than zone 18.In certain embodiments, the printing in the zone in the graticule pattern data is the printing in zone on the graticule.In these embodiments, the technological parameter of determining the printing susceptibility comprises the graticule Fabrication parameter.In other embodiments, the printing in the zone in the graticule pattern data is the printing in zone on the wafer.In these embodiments, be used for determining that the technological parameter of printing susceptibility comprises graticule fabrication process parameters (because the wafer printing depends on the graticule printing) and wafer fabrication process parameter.Therefore, described herein method is used in the graticule pattern data definition automatically or produces to have the key or the zones of different of crucial printing not, and this is with define other method zones of different and manual execution in the graticule pattern data based on electric importance different.
Be appreciated that term used herein " first " and " second " be not intended to represent instantaneous, the space or the continuous quantity in zone in the graticule pattern data.Term " first " and " second " only are used for representing the zones of different in the graticule pattern data with different printing sensitivity as herein described.Be appreciated that in addition and can adopt any other suitable term to represent zones of different in the described graticule pattern data of text.
An example of the difference of the printing susceptibility of zones of different as shown in Figure 3 in the graticule pattern data.As shown in Figure 3, the function that when being printed in graticule, changes of the attribute of the graticule pattern data in first area (zone 14 for example shown in Figure 2) and changing as technological parameter.Attribute shown in Figure 3 can comprise any interested attribute, such as width, highly, fillet degree or any other attribute to change along with the technological parameter that can measure form.Can change the shape of curve with the graphic attribute of this shape.For example, curve shown in Figure 3 can be the feature height that is printed on the graticule.Like this, the highest feature height is represented the minimum of thickness loss and the optimal processing parameter that is used to reduce contraction, and along with technological parameter away from optimal processing parameter, contraction in the feature increases.Have maximal value and on peaked both sides, show symmetry although curve shown in Figure 3 is represented as, but be appreciated that curve can be an Any shape, these shapes are how to determine as the function change of technological parameter by the print characteristics attribute that the graticule pattern data changes.
The technological parameter that distributes along the x axle of curve shown in Figure 3 can be the technological parameter that any known print characteristics that makes the graticule pattern data (such as exposure agent, exposure focus etc.) changes.In addition, can produce this curve more than of graticule pattern data to different qualities and/or different technological parameter.In addition, different curves can be produced and of the variation of the attribute of the feature in the graticule pattern data on graticule or the wafer will be printed on as the technological parameter function with expression.Obviously, technological parameter is that graticule printing or wafer printing change according to what assess.
As Fig. 3 further shown in, the attribute of the graticule pattern data in the second area different with for example first area that is printed in the zone 18 on the graticule shown in Figure 2 changes as the function of changes in process parameters.The attribute of second area shown in Figure 3 is identical with the attribute of first area shown in Figure 3, therefore can use curve directly to compare between two zones with regard to an attribute.As shown in Figure 3, the attribute in first and second zones departs from each other.This departing from is to be caused by the different attribute that relates to the zones of different design.Yet first and second zones not necessarily will be departed from each other, and perhaps some part of the curve in first and second zones can overlap each other and/or have more than one intersection point.
Under any circumstance, zones of different can have as technological parameter and changes function and by different way and the attribute that changes in various degree on the curve representation graticule pattern data shown in Figure 3.For example as shown in Figure 3, two curves all show minimum of contraction (although the optimal processing parameter of the same alike result of the zones of different of graticule pattern data can be different) near the same technological parameter by arrow 22 expressions.In addition, as shown in arrow 24, along with technological parameter away from optimal processing parameter, the attribute of first area changes more tempestuously than the attribute of second area.Therefore, the printing of first area more is sensitive to the variation of technological parameter than the printing of second area.
The result in some cases, the process window of first area will be littler and even more much smaller than the process window of second area.For example, as shown in arrow 26, the process window of second area that is included in the value that has in the second area that can receive property value the technological parameter that produces print characteristics relatively large (for example comprise almost assessed all technological parameters).On the contrary, less than the process window of second area, this is the jumpy direct result of the attribute of the print characteristics in the first area as the changes in process parameters function to the process window of first area as shown in arrow 28 in this embodiment basically.In other words, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the process window narrower than second area.
Therefore, as mentioned above, the susceptibility of the printing in the zone in the graticule pattern data can be based on the estimation of graticule pattern data self (for example size) attribute and/or graticule pattern data process window.Yet the susceptibility of graticule pattern data printing also can be based on the MEEF of graticule pattern data and is determined.For example, the zone with graticule pattern data of high relatively MEEF can have with regard to the graticule pattern data with low relatively MEEF the more high sensitive printing of one or more technological parameters.In addition, can use the combination of in these printing sensitivity indexs (for example attribute, handle window, MEEF) or these indexs and determine the susceptibility in graticule pattern data zone.Available in addition any other in the industry known way determine the susceptibility of the printing of zones of different in the graticule pattern data.
As shown in Figure 2, zone 14,18 comprises a plurality of features with identical printing.This method can be the zone that has identical printing in the graticule pattern data with each region deviding.Therefore, depend on to the degree that alters a great deal of area size the quantity of the adjacent feature that for example has identical printing, the size of those features and the distance between those features.
Yet configurable this method is with minimizing or minimize the area that is defined in the zone in the graticule pattern data.Like this, available " little susceptibility " defines the zone in the graticule pattern data.For example, this method can be configured to each feature is appointed as individual region.In such example, the area approximation in the zone 30 in the graticule pattern data equals the area of feature 32 in the graticule pattern data.In another example, can with region deviding the part of feature.In this embodiment, the area in the zone of graticule pattern data is less than the area of feature in the graticule pattern data.In addition, a feature can be made up of a plurality of zoness of different, and each zone has different or printing susceptibility independently.
Can carry out different processing to zone with different printing susceptibility.For example, as present embodiment was described ground, the regional available different analog parameters with different printing were simulated, and checked and/or reexamine parameter with difference with different inspection parameters to reexamine.
Especially, this method comprises to how printing the graticule pattern data to be simulated, shown in Fig. 1 step 34.Can carry out this simulation to determine how on graticule, to print the graticule pattern data.Therefore, can use the model of description graticule manufacturing process to simulate to how printing the graticule pattern data.In addition, or instead, can carry out simulation to determine how the graticule pattern data is printed on the wafer.Therefore, describing the graticule manufacturing process is used to how printing the graticule pattern data simulate with the model of describing wafer fabrication process (comprising the resist layer model).
According to an embodiment, available different analog parameters are simulated the simulation in the zone of graticule pattern data with different printing.Preferably, the analog parameter of available other zone lower than printing susceptibility with the simulation of high fidelity more simulated the zone with more responsive printing.The fidelity of simulation is adjusted on available several different methods ground, region-by-region in the graticule pattern data.For example, can increase fidelity by the pixel quantity that increase is used to simulate.Can reduce fidelity by changing pixel quantity.Like this, the analog parameter that has the first area of more responsive printing with regard to second area comprises bigger pixel quantity.In addition, can under various technological parameters (for example graticule manufacturing process and/or wafer Fabrication parameter), simulate how to determine with different technical parameters or how the feature in the zone to be printed across the series of process parameter area.Therefore, the other method of increase simulation fidelity will be to use the higher sampling to the different technical parameters in the zone of graticule pattern data, and aforementioned graticule pattern data has the more responsive printing in other zone lower than printing susceptibility.Can known in the industry any other method change the simulation fidelity.
Fig. 4 illustrates an a kind of example of database structure, and this database is graticule pattern data zones of different assignment and storage analog parameter.In addition, Fig. 4 illustrates the content of the database of the parameter that is used for representing being used for the simulation of graticule pattern data.Illustrated database 36 comprises the analog parameter 38 in assignment zone 40 in the graticule pattern data.Although two zones are only arranged, be appreciated that this database can comprise the analog parameter of graticule pattern data zone or All Ranges more than two in database structure shown in Figure 36.
First and second zones shown in Figure 4 are in this embodiment corresponding to first and second zones shown in Figure 2.Equally, the first area has the printing more responsive than second area.As shown in Figure 4, it can be different giving each regional analog parameter, and available thus different fidelitys are simulated zones of different.Thereby especially analog parameter can be given the first area simulates the first area with high relatively fidelity.Can change the fidelity of simulation as described above.In addition, as shown in Figure 4, the simulation fidelity that zones of different is given is illustrated in the analog parameter row of database structure, and the realistic simulation parameter (for example pixel quantity etc.) that is used for different fidelitys is defined in another data structure (not shown).Perhaps, definition each parameter high and low or other fidelity simulation is comprised in the database structure 36.As shown in Figure 4, thus analog parameter can be given second area and second area be simulated with relative low fidelity.Other difference in the simulation that zones of different is carried out also can be incorporated into database structure 36 or be incorporated in different, the independent database structure (not shown).
May require in step 34, all graticule pattern datas that how to print a graticule (being graticule pattern data integral body) to be simulated.Obviously, these simulations require a large amount of computational resources and time, and may be heavy to the computational load of these simulations.Yet, use aforesaid crucial printing characteristic area calculating is carried out more expeditiously directly to simulate.Especially can determine the susceptibility of each regional printing of formation graticule pattern data as described above, and the fidelity that the change of ground, region-by-region is simulated in the graticule pattern data as mentioned above, because using the fidelity higher than insensitive zone simulates those zones with responsive printing, therefore reduce computational resource and the time that is used to simulate in a large number, and do not reduced the serviceability and the purpose of analog result.
The analog result of step 34 is used to the inspection of the graticule pattern data shown in the step 44.The inspection of graticule pattern data comprises the printing defects that detection is produced by graticule pattern data zones of different.For example, this method comprises and detects the printing defects that is produced by the graticule pattern data based on simulation.In addition, the inspection of graticule pattern data can comprise which feature of determining in the graticule pattern data can produce printing defects on graticule.For example, check that the simulation that relates to graticule pattern data feature compares with the feature specification that is provided with by IC deviser or IC manufacturer.In an example, the size of simulation feature and the range of size that is printed on the characteristics specify on the graticule by the IC deviser are compared.
Inspection can comprise any other method that is used for determining the printing defects on the graticule, for example DRC.In another example, simulation graticule data and data from air (aerial) sensor can be compared, this air borne sensor is in No. 10/679857 U.S. Patent application description to be arranged at the sequence number of being owned together by people such as Stokowski, be filed on October 6th, 2003, and the document resembles and has been incorporated as a reference setting forth in full.Perhaps, simulation graticule data and another kind of air image sensor can be compared, this air image sensor has description in people's such as people's such as people's such as Ye No. 6803554 United States Patent (USP)s, Ye No. 6807503 United States Patent (USP)s and Ye No. 2003/0226951 U.S. Patent Application Publication, these documents resemble and have been incorporated as a reference setting forth in full.
In addition, can carry out different inspections to zones of different on the graticule.For example, for the zone on the graticule with responsive relatively printing, the threshold value that is used for discerning graticule pattern data defective is configured to value lower for the zone on the graticule zone with relative insensitivity printing (or approaching desired value).What in other words, available feature changed detects printing defects in the zone with responsive printing than low tolerance.Equally, the higher tolerance limit of available feature variation detects the printing defects in the zone with insensitive printing.Like this can be with according to each regional printing susceptibility and region-by-region ground changes the mode that one or more inspections set forth and checks.Especially available than the higher susceptibility inspection in other zone than other zone in the graticule pattern data to the zone of the more responsive printing of changes in process parameters.As a result, the inspection of graticule pattern data can detect the defective in the prior graticule pattern data of user.
Shown in step 42, this method comprises producing checks technology.Check that technology is based on the graticule pattern data and produces.Especially can produce inspection technology based on zones of different printing in the graticule pattern data.For example, the computer utility method that produces the technology be used for checking the graticule pattern data comprises the zones of different of discerning graticule pattern data as mentioned above and gives zones of different with one or more inspection parameters.Especially, thus to checking that the parameter assignment checks zones of different with different susceptibilitys.For example, thus can check above-mentioned first area in process with the susceptibility higher checking the parameter assignment than second area.For zones of different is given different parameters, for example above-mentioned threshold value or check parameter with other of known variant in the industry.Can subsequently the inspection technology that produces in the step 42 be used for step 44 to check the graticule pattern data.
Produce and check that technology comprises generation database structure as shown in Figure 5.Fig. 5 illustrates an example can giving and store the database structure of checking parameter to graticule pattern data zones of different.In addition, Fig. 5 illustrates the data structure content that is used for representing being used for the parameter of graticule pattern data detecting.Illustrated data structure 46 comprises the inspection parameter 48 of giving zone 50 in the graticule pattern data.Although two zones only are shown in the data structure 46, be appreciated that this database structure can comprise in the graticule pattern data analog parameter of zone more than two or All Ranges.
First and second zones shown in Figure 5 are corresponding with first and second zones shown in Figure 2 in this embodiment.As shown in the figure, the inspection parameter that is endowed each zone is different, therefore can check zones of different with different susceptibilitys.Especially will check that parameter gives the first area, thereby check the first area with high relatively susceptibility.Can change the susceptibility of inspection as described above.For example can use algorithms of different shown in Figure 5 (for example high sensitive algorithm or low sensitivity algorithm) and change susceptibility.Can otherwise (for example change the threshold value that is used for detecting graticule pattern data defective) and change the susceptibility of checking technology.In addition as shown in Figure 5, the inspection parameter (for example special algorithm etc.) that is used for the certain sensitive degree is defined within and checks Argument List.Perhaps susceptibility is checked in indication in the inspection Argument List of database structure, and shows these parameters at different pieces of information library structure middle finger.As shown in Figure 5, check that parameter is endowed second area, thereby check second area with low sensitivity.Also other difference in the inspection that each zone is carried out can be incorporated into database 46 or be incorporated in different, the independent database structure (not shown).
The inspection of graticule pattern data was preferably carried out before making graticule with the graticule pattern data.Defective in the graticule pattern is corrected before making graticule with the method, this is time-consuming and cost is very high.For example shown in Figure 1, this method also comprises the change graticule pattern data shown in the step 52.Can change the graticule pattern data based on simulation and/or check result.If the change of then preferably carrying out the graticule pattern data will change that the graticule pattern data is printed on the graticule and the quantity that is formed on the printing defects on the graticule to reduce.In addition, change the graticule pattern data and comprise that the one or more attributes that change one or more features in the graticule pattern data are to reduce the susceptibility of graticule pattern data printing.One or more attributes that for example can change SRAF in the graticule pattern data increase the printing of feature thus in acceptable limits and/or across the wideer scope of technological parameter feature is printed on the graticule.After changing the graticule pattern data, the simulation of the graticule pattern data after can changing once more as described above, for the generation of the inspection technology after changing and the inspection of the graticule pattern data after changing.
This method also comprises and reexamines the graticule pattern data, shown in step 54 like that.Reexamining the graticule pattern data comprises and reexamines feature or the zone that will produce in the graticule pattern data of printing defects being defined as by the inspection of carrying out in the step 44.The information that comprises about graticule pattern data defect part that reexamines of graticule pattern data is shown to the user so that the user decisions making to defect part.Like this, reexamine and comprise manually and reexamining.The information that is shown to the user comprises that analog result, check result, actual graticule pattern data or any other understand the information of the graticule pattern data of graticule pattern data defect part about obtaining and help the user.The user can should change (this part can be accepted), indication and should carry out judgement to the additional simulation of defect part etc. about for example ignoring defect part (it is acceptable promptly indicating defect part), indication defect part carrying out.
Perhaps, this method comprises and reexamines the graticule pattern data automatically or semi-automatically check the graticule pattern data, can be to make similar judgement about defect part in semi-automatically checking the graticule pattern data.Reexamine the result and also be used to change the graticule pattern data, it is carried out as mentioned above.In addition, reexamine the result and be used to change inspection technology or the method that is produced, check that wherein technology is generated (for example producing more accurate or more responsive inspection technology).
In certain embodiments, method described here comprises that also generation reexamines technology (not shown) to the graticule pattern data.As mentioned above, produce and to reexamine technology comprise and give first and second zones that the available thus susceptibility higher than second area reexamines the first area in reexamining technology one or more parameters that reexamine.Generation reexamines technology and comprises generation database structure as shown in Figure 6.Fig. 6 is depicted as the zones of different of graticule pattern data and gives or store an example of the data structure that reexamines parameter.In addition, Fig. 6 illustrates and is used for representing that the graticule pattern data reexamines the content of the data structure of parameter.What illustrated data structure 56 comprised the zone 60 of giving in the graticule pattern data reexamines parameter 58.Although two zones only are shown in database structure 56, be appreciated that this database structure can comprise in the graticule pattern data more than two or All Ranges reexamine parameter.
First and second zones shown in Figure 6 are corresponding with first and second zones shown in Figure 2 in this embodiment.As shown in Figure 6, the parameter that reexamines of giving each zone is different, and available thus different magnification or other reexamine parameter zones of different is reexamined.Especially, thus will reexamine parameter in this embodiment gives the first area first area is reexamined with high power.Can for example change the magnification of observation by the one or more parameters that change the optical check device.Can change magnification by the device (for example from the optics review tools to the electron beam review tools) that reexamines that change is used for observing zone in the graticule pattern data.In addition as shown in Figure 6, can be at the susceptibility or the magnification that indication reexamines in the Argument List that reexamine of database structure, and can will be used for the specific actual parameter-definition that reexamines that reexamines in another database structure (not shown).Perhaps, each parameter that the high or low susceptibility of definition can be reexamined is included in the database structure 56.As shown in Figure 6, can give second area with reexamining parameter, thereby to hang down magnification inspection second area or second area not reexamined.To each zone carry out reexamine in other difference also be incorporated into database structure 56 or be comprised in different, the independent database structure (not shown).
Therefore, as mentioned above, this method comprises a plurality of steps, but these steps can iterative manner carry out being printed in graticule pattern data on the graticule to produce with accepting method.Can carry out above-mentioned steps in the same manner to determine how the graticule pattern data is printed on the wafer.For example can change above-mentioned simulation steps so that simulation not only uses the graticule modeling also to use wafer printing model (having a plurality of models, for example imprint lithography model and resist model).Can change above-mentioned other step in the same manner.Can determine like this to be created in printing defects on the wafer, and can change the graticule pattern data and be printed on printing defects quantity on the wafer with minimizing by the graticule pattern data.
Judge graticule pattern data (after the change or unaltered) will be with accepting method printing but (on graticule and/or wafer), available graticule pattern data is made graticule, shown in step 62 like that.Be used to make the technology and the wafer Butut resemble process of graticule.For example, the purpose of graticule manufacturing is the pattern that forms opaque material generally speaking, such as the chromium layer of the relative thin on the substrate that is transparence substantially (for example glass).In addition, other is applicable to that the opaque material of graticule manufacturing includes, but are not limited to chromium, chromium oxide, chromium nitride and molybdenum/silicon.The suitable thickness of chromium layer near 1000  and by sputtering sedimentation on glass substrate.Other the suitable transparent material that is used for the graticule manufacturing comprises borosilicate glass or molten silicon (SiO 2, " quartz "), it has metastable size and to the transmissison characteristic of exposure system wavelength.Other material also can be used for the graticule manufacturing.For example, the film under opaque material can be used as bonding coat.This bonding coat comprises for example potpourri of chromium, nitrogen and oxygen.In addition, the film that is formed on the opaque material top can be used as anti-reflecting layer.Suitable anti-emission coating can be made of the relative thin layer of for example chromium oxide (Cr2O3).
The graticule manufacturing comprises a plurality of different steps, such as producing Butut.Perhaps, can use laser explosure or electron beam direct to write exposure and formation graticule.Laser explosure allows to use the normalized optical resist and writes exposure than electron beam direct faster.In addition, laser system can be buied and operate more cheaply.Directly writing lasing light emitter is switched on and ends by sound one photomodulator (AOM).A commercial example directly writing laser system is an ALTA3000R laser write device, and he can buy from California, Hayward, ETECSystems Inc.Owing to can produce the linear resolution meticulousr than laser system, directly the writing beam system often is used to make complicated graticule.In addition, directly the writing beam system also writes the chip size bigger than laser system.The commercial directly example of writing beam system comprises the MEBES4500 and 5000 systems of buying from ETECSystem Inc.The graticule manufacturing also comprises other step, for example is etched with pattern is transferred to (for example opaque material or transparent material) on the primer from the resist on the graticule.
No matter the actual process parameter that is used to make graticule how, the result of graticule manufacturing is the graticule pattern data that is printed on the graticule, shown in step 64.Before using graticule, carry out a plurality of steps then to form the Butut wafer.For example, shown in step 66, this method comprises to be checked the graticule pattern data that is printed on the graticule.Different with the inspection of carrying out in the step 44, this inspection is to use the measurement of carrying out on the graticule that actual manufacturing finishes to realize.For example, can be in step 66 from optics or use based on the instrument of electron beam and check graticule.
Identical with the inspection on the graticule pattern data of carrying out in the step 44, the graticule inspection of carrying out in the step 66 has one or more inspection parameters, and these parameters ground, region-by-region on graticule changes.For example, based on the printing susceptibility of zones of different on the top definite graticule, being used for one or more parameters that graticule checks can change across graticule ground.The one or more inspection parameters that change in step 66 can comprise any inspection parameter, and these check that parameter can change the susceptibility (for example threshold value) that is checked through defective on graticule.In addition, relate to printing defects and the non-printing defects on the graticule (for example particle contamination, scratch etc.) that detects on the graticule in the inspection of carrying out on the graticule.
This method also comprises and reexamines the graticule pattern data that is printed on the graticule, shown in step 68 like that.The reexamining of graticule pattern data after can printing as described above (for example manually, automatically or semi-automatically).In addition, can change the one or more parameters that reexamine technology according to the printing susceptibility of the zones of different of above-mentioned graticule pattern data.Yet different with said method, reexamining of carrying out in the step 68 is reexamining the graticule pattern data of actual print on graticule.Therefore, reexamining of the graticule pattern data after the printing comprises the additional information of collection about the graticule pattern data after printing.For example, can use graticule to reexamine device and check the graticule pattern data after the printing on the graticule.It can be high power optical device and/or electron beam device that graticule reexamines device.The graticule review tools generally be configured to produce about in the step 66 on graticule the additional information of detected defective or more detailed information.
The inspection of the graticule pattern data after the printing and reexamine other technology that the result is used to determine graticule.For example, if in graticule zone, detect printing defects, judge that then these printing defects are recoverable with responsive relatively printing.For example can use focused ion beam (FIB) prosthetic device or known in the industry any other suitable prosthetic device to carry out graticule defect repair technology.In addition, can once repair each defective (for example a plurality of defectives are repaired simultaneously) on the graticule.Also should judge whether to clean graticule,, then clean if on graticule, find a large amount of relatively defectives (for example particle defects).In addition, based on the result who checks and reexamine, can judge that graticule can be used (result who for example processes again to remove one or more manufacturing procedures also repeats these procedure of processings with the preferable result of expectation) again and still should give up this graticule (promptly abandoning).
If the graticule pattern data after the printing then shown in step 70, is made wafer with graticule through checking and reexamining.Making wafer comprises generally speaking graticule is used for to one or more (or more) steps before the wafer Butut.Yet, make wafer with graticule and comprise the imprint lithography that wherein resist layer is formed on the wafer generally speaking, and the pattern that is formed on the wafer is transferred to resist layer (normally by the exposure to chemical solvent) by making the light transmission graticule and being projected on the resist layer and processing resist layer.Pattern on the graticule or be transferred on the resist layer in non-optical mode and (for example use the x ray of x ray lithography).
Can change one or more parameters (optics and/or non-optical parameter) of imprint lithography according to the printing susceptibility of zones of different on the graticule.For example, ground, region-by-region changes imprint lithography (for example exposure and/or reflectivity dosage (dose)) based on the susceptibility of the graticule pattern data region-by-region of determining like that as mentioned above and on wafer.Ideally, one or more parameters that can change imprint lithography are printed on degree of accuracy on the wafer to increase the zone that will have responsive printing.Therefore, this method comprises based on the printing susceptibility of zones of different on the graticule and produces the imprint lithography that is used to make wafer (not shown).The parameter of other Butut technology (for example etching) of carrying out on wafer in addition, is also based on the susceptibility of the printing of zones of different and ground, region-by-region changes.The graticule Fabrication parameter changes on ground, region-by-region in the same manner.
Shown in step 72, the result who makes wafer with graticule is the graticule pattern data that is printed on the wafer.Can before being carried out other wafer fabrication process, wafer carry out a plurality of technologies to wafer.For example such shown in the step 74, this method comprises to be checked the graticule pattern data that is printed on the wafer.Can use known in the industry any method (optics, non-optical, electron beam, scatterometer, ellipsometry, reflectometer) that the graticule pattern data that is printed on the wafer is checked.Can be according to the susceptibility of zones of different on the wafer and on wafer ground, region-by-region change one or more parameters of wafer inspection.Can be as described above the susceptibility of zones of different based on the susceptibility of the zones of different of the graticule pattern data corresponding and on definite wafer with zone on the wafer.One or more parameters of the change of wafer inspection technology comprise any parameter (for example threshold value) that can change the wafer inspection susceptibility.This method also comprises generation wafer inspection technology, wherein gives different wafer areas with different inspection parameters.
Shown in step 76, this method comprises that also the graticule pattern data to being printed on the wafer reexamines.(for example manually, automatically or semi-automatically) carries out being printed on reexamining of graticule pattern data on the wafer as described above.In addition, can be as described above change one or more parameters that wafer reexamines technology according to the printing susceptibility of the zones of different of graticule pattern data.Yet different with said method, reexamining of carrying out in step 76 is reexamining the graticule pattern data of actual print on wafer.Therefore, reexamining of the graticule pattern data after the printing comprises that collection is about being printed in the additional information of the graticule pattern data on the wafer.For example, reexamining of the graticule pattern data after the printing comprises that collection is about being printed in the additional information of the graticule pattern data on the wafer.For example, the graticule pattern data that can use the inspection of wafer review tools on wafer, to be completed for printing.The wafer review tools can be optical tooling, electron beam device or any known in the industry other suitable instrument of high power.The wafer review tools be configured to generally speaking produce about in step 74 on wafer the additional information of detected defective or details more.
Method shown in Figure 1 also comprises any other step of describing herein.In addition, method shown in Figure 1 also comprises known in the industry any other step, for example carries out electric test on the manufacturing of finishing device on the wafer and the device made.
The programmed instruction of realizing method described herein is sent in or is stored on the mounting medium.Mounting medium can be the transmission medium of lead, cable or wireless transmission link or the signal that edge such as lead, cable or link transmit.Mounting medium can also be a storage medium, for example ROM (read-only memory), random access memory, disk or CD or tape.
Computer system can be taked various forms, comprises personal computer system, large computer system, workstation, the network equipment, internet device, PDA(Personal Digital Assistant), television system or miscellaneous equipment.Generally speaking, term " computer system " is defined as widely around any equipment with one or more processors, and it carries out the instruction from storage medium.
Can achieve in any way programmed instruction, for example based on the technology of process, based on the technology of assembly and/or towards technology of subtend etc.For example, can use ActiveX control, C++ subtend, JavaBeans, Microsoft Foundation Classes (MFC) or other technology or method to realize programmed instruction as required.
Fig. 7 illustrates an embodiment of the system of the one or more steps that are used for carrying out methods described herein.This system comprises computer system.Computer system comprises processor 78.Processor comprises known in the industry any suitable processor.For example, processor can be map computing machine or parallel processor.System also comprises more than one processor (not shown).System also comprises mounting medium 80.Mounting medium is disposed as described above.For example, mounting medium 80 comprise can carry out with processor 78 on programmed instruction 82.Programmed instruction is executable to realize each embodiment of said method.Programmed instruction also is configured as described above.
In certain embodiments, system also comprises graticule inspection and/or measurement facility 84.Graticule inspection and/or measurement facility 84 are configured to detect the defective (not shown) on the graticule 86 and/or measure the one or more attributes that are formed at the feature (not shown) on the graticule 86.Graticule inspection and/or measurement facility 84 are coupled in processor 78.For example, one or more assemblies of instrument 84 are coupled in processor 78 by transmission medium (not shown).Transmission medium comprises " wired " and " wireless " part.In another example, the detecting device 88 of instrument 84 is configured to produce output 90.Output is sent to processor 78 along transmission medium from detecting device 88.In addition, the detecting device 92 of instrument 84 is configured to produce output 94, and output 94 92 is sent to processor 78 along transmission medium from detecting device.In certain embodiments, can transmit output 90,94 by the one or more electronic units that are coupling between detecting device and the processor.Therefore, output 90,94 is transferred to processor from instrument 84. Output 90,94 can comprise and for example detects data and/or metric data.Programmed instruction 82 can be carried out on processor to use output 90 and/or 94 to realize described one or more computer implemented methods herein.
Graticule inspection and/or tolerance device 84 comprise platform 96, in inspection and/or during measuring graticule 86 are placed on the platform 96.This platform comprises known in the industry any suitable mechanism or mechanical arm assembly.Graticule inspection and/or measurement facility 84 also comprise light source 98.Light source 98 comprises any known in the industry suitable sources.In addition, this instrument comprises beam splitter 100, and beam splitter 100 is configured to and will leads along the angle approximately perpendicular to the upper surface of graticule 86 from the light of light source 98.Beam splitter comprises known in the industry any suitable beam splitter.Perhaps, configurable light source so that light be directed to along the illumination angle that favours graticule 86 surfaces.Detecting device 88 is configured to detect from the reflection of graticule 86 upper surfaces and by the light of beam splitter 100 transmissions.Detecting device 88 also is configured to produce output 90.Detecting device 92 is configured to detect the light by graticule 86 transmissions.Detecting device 92 also produces output 94.Like this, configurable device 84 detects the defective on the graticule to use light reflection and/or transmission.Detecting device can comprise known in the industry any suitable detecting device.
Although the overall arrangement of graticule detection and/or tolerance device as shown in Figure 7, be appreciated that this device comprises any known in the industry suitable configurations.For example, this platform comprise can from KLA-Tebcor commerce buy 8250, a kind of 8250-R or 8450 instruments.This instrument can have various structures in addition, for example optical imaging system, based on the system of oval luminosity, based on the system of scatterometer or such as the electron beam system of CD SEM.In addition, instrument 84 can be replaced by the different instruments such as wafer inspection instrument, graticule review tools, wafer review tools etc.Processor also is coupled in more than one this instrument.
In addition, although the processor of computer system is coupled in graticule inspection and/or measurement facility as shown in the figure like that, be appreciated that in another embodiment this computer system configurations to be become independent device.For example, this computer system comprises that one or more assemblies of specialized designs (with special-purpose selectively) are to carry out described one or more methods herein.Computer system also is configured to carry out described any other method herein, and for example how simulation is printed on the graticule pattern data on graticule and/or the wafer.In addition, computer system can be coupled in manufacturing (fab) database, thereby computer system can send to information/be received from manufacturing database.
Those skilled in that art further correction and other embodiment by can understand each side of the present invention easily to the reading of instructions.For example, provide and be used to simulate the graticule pattern data, check that graticule pattern data and generation are used to check the method for graticule pattern data technology.Therefore this instructions is interpreted as exemplary and is intended to teach those skilled in that art and realizes general fashion of the present invention.Be appreciated that form of the present invention illustrated and that describe is as present preferred embodiment herein.Formation and material can be made of and material substitution other that describe herein, and parts and process sequence are reversible, can adopt some feature of the present invention independently in addition, and these will become clearly after those skilled in that art read instructions of the present invention.Can be under not breaking away from by the prerequisite of following claims of the present invention spirit and scope to herein described constitute make change.
Claims
(according to the modification of the 19th of treaty)
1. a generation is used to check the computer implemented method of the technology of graticule pattern data, comprising: the susceptibility of determining the printing that zones of different in the graticule pattern data changes technological parameter; Be identified in the first area in the graticule pattern data, wherein, the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
Give first area and second area with one or more inspection parameters, thereby in process, check the first area with the susceptibility higher than second area;
Produce the technology that is used to check the graticule pattern data based on one or more inspection parameters.
2. the method for claim 1 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
3. the method for claim 1 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
4. the method for claim 1 is characterized in that, the area approximation of first area equals the area of a feature in the graticule pattern data.
5. the method for claim 1 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, because the first area has the process window narrower than second area.
6. the method for claim 1 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, because the first area has the mask error improvement factor higher than second area.
7. the method for claim 1, it is characterized in that, also be included as the graticule pattern data and produce and to reexamine technology, wherein produce and reexamine technology and comprise and reexamine with one or more that parameter is given the first area and second area reexamines the first area to use the susceptibility higher than second area during reexamining processing.
8. computer implemented method that is used to check the graticule pattern data comprises:
Determine that zones of different is to the susceptibility of the printing of technological parameter change in the graticule pattern data;
First area in the identification graticule pattern data, wherein the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
Check the first area with the susceptibility higher than second area.
9. method as claimed in claim 8 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
10. method as claimed in claim 8 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
11. method as claimed in claim 8 is characterized in that, the area approximation of first area equals the area of a feature in the graticule pattern data.
12. method as claimed in claim 8 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, because the first area has the process window narrower than second area.
13. method as claimed in claim 8 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, because the first area has the mask error improvement factor higher than second area.
14. method as claimed in claim 8 is characterized in that, described inspection comprises the printing defects that detection will be produced by first and second zones of graticule pattern data.
15. method as claimed in claim 8 is characterized in that, carries out described inspection before making graticule with the graticule pattern data, described method also comprises based on the result of described inspection and changes the graticule pattern data.
16. method as claimed in claim 8, it is characterized in that, describedly determine to comprise each regional printing of determining the graticule pattern data for the susceptibility of changes in process parameters how, wherein said inspection comprises uses described each zone of checking the graticule pattern data based on the susceptibility of each regional printing.
17. a computer implemented method that is used to simulate the graticule pattern data comprises:
Determine that zones of different is to the susceptibility of the printing of technological parameter change in the graticule pattern data;
First area in the identification graticule pattern data; Wherein the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
To how printing the graticule pattern data simulating, wherein carrying out the simulation of first area and second area, thereby the first area being simulated with the fidelity higher than second area with one or more different analog parameters.
18. method as claimed in claim 17 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
19. method as claimed in claim 17 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
20. method as claimed in claim 17, it is characterized in that, described simulation comprise to as how different technical parameters printing graticule pattern data simulate, wherein one or more different analog parameters comprise the sampling for the different technical parameters of first area higher than second area.
21. method as claimed in claim 17 is characterized in that, one or more different analog parameters comprise the pixel than the first area of the bigger quantity of second area.
22. method as claimed in claim 17 is characterized in that, also comprises detecting the printing defects that will be produced by the graticule pattern data based on described simulation.
23. method as claimed in claim 17 is characterized in that, also comprises based on described simulation changing the graticule pattern data.
24. method as claimed in claim 17 is characterized in that, described simulation comprises simulates whole graticule pattern data.

Claims (24)

1. a generation is used to check the computer implemented method of the technology of graticule pattern data, comprising:
Discern the first area in the graticule pattern data, wherein, the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
Give first area and second area with one or more inspection parameters, thereby in process, check the first area with the susceptibility higher than second area.
2. the method for claim 1 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
3. the method for claim 1 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
4. the method for claim 1 is characterized in that, the area approximation of first area equals the area of a feature in the graticule pattern data.
5. the method for claim 1 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the process window narrower than second area.
6. the method for claim 1 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the mask error improvement factor higher than second area.
7. the method for claim 1, it is characterized in that, also be included as the graticule pattern data and produce and to reexamine technology, wherein produce and reexamine technology and comprise and reexamine with one or more that parameter is given the first area and second area reexamines the first area to use the susceptibility higher than second area during reexamining processing.
8. computer utility method that is used to check the graticule pattern data comprises:
First area in the identification graticule pattern data, wherein the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
Check the first area with the susceptibility higher than second area.
9. method as claimed in claim 8 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
10. method as claimed in claim 8 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
11. method as claimed in claim 8 is characterized in that, the area approximation of first area equals the area of a feature in the graticule pattern data.
12. method as claimed in claim 8 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the process window narrower than second area.
13. method as claimed in claim 8 is characterized in that, the printing of first area more is sensitive to the variation of technological parameter, and wherein the first area has the mask error improvement factor higher than second area.
14. method as claimed in claim 8 is characterized in that, described inspection comprises the printing defects that detection will be produced by first and second zones of graticule pattern data.
15. method as claimed in claim 8 is characterized in that, carries out described inspection before making graticule with the graticule pattern data, described method also comprises based on the result of described inspection and changes the graticule pattern data.
16. method as claimed in claim 8, it is characterized in that, also comprise each regional printing of determining the graticule pattern data for the susceptibility of changes in process parameters how, wherein said inspection comprises uses described each zone of checking the graticule pattern data based on the susceptibility of each regional printing.
17. a computer implemented method that is used to simulate the graticule pattern data comprises:
First area in the identification graticule pattern data; Wherein the printing of the first area in the graticule pattern data more is sensitive to the variation of technological parameter than the printing of second area; And
To how printing the graticule pattern data simulating, wherein carrying out the simulation of first area and second area, thereby the first area being simulated with the fidelity higher than second area with one or more different analog parameters.
18. method as claimed in claim 17 is characterized in that, the printing in first and second zones is the printings in first and second zones on the graticule, and wherein technological parameter comprises the graticule fabrication process parameters.
19. method as claimed in claim 17 is characterized in that, the printing in first and second zones is the printings in first and second zones on the wafer, and wherein technological parameter comprises graticule fabrication process parameters and wafer fabrication process parameter.
20. method as claimed in claim 17, it is characterized in that, described simulation comprise to as how different technical parameters printing graticule pattern data simulate, wherein one or more different analog parameters comprise the sampling for the different technical parameters of first area higher than second area.
21. method as claimed in claim 17 is characterized in that, one or more different analog parameters comprise the pixel than the first area of the bigger quantity of second area.
22. method as claimed in claim 17 is characterized in that, also comprises detecting the printing defects that will be produced by the graticule pattern data based on described simulation.
23. method as claimed in claim 17 is characterized in that, also comprises based on described simulation changing the graticule pattern data.
24. method as claimed in claim 17 is characterized in that, described simulation comprises simulates whole graticule pattern data.
CNB200480035963XA 2003-12-04 2004-12-06 Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data Active CN100416574C (en)

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CN101720448B (en) * 2008-07-08 2012-10-31 新思科技有限公司 Method and apparatus for determining the effect of process variations
CN102815573A (en) * 2011-06-10 2012-12-12 海德堡印刷机械股份公司 Method for creating a fold preparation pattern, computer for performing the method and system with such a computer
TWI582529B (en) * 2013-08-09 2017-05-11 格羅方德半導體公司 Process enhancing safe sraf printing using etch aware print avoidance

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US6466314B1 (en) * 1998-09-17 2002-10-15 Applied Materials, Inc. Reticle design inspection system
US6529621B1 (en) * 1998-12-17 2003-03-04 Kla-Tencor Mechanisms for making and inspecting reticles

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Publication number Priority date Publication date Assignee Title
CN101720448B (en) * 2008-07-08 2012-10-31 新思科技有限公司 Method and apparatus for determining the effect of process variations
CN102815573A (en) * 2011-06-10 2012-12-12 海德堡印刷机械股份公司 Method for creating a fold preparation pattern, computer for performing the method and system with such a computer
CN102815573B (en) * 2011-06-10 2017-03-01 海德堡印刷机械股份公司 For producing method, computer and the system of fold preparation pattern
TWI582529B (en) * 2013-08-09 2017-05-11 格羅方德半導體公司 Process enhancing safe sraf printing using etch aware print avoidance

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