CN1889804A - Semiconductor luminotron lamp local damage bypass protector - Google Patents
Semiconductor luminotron lamp local damage bypass protector Download PDFInfo
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- CN1889804A CN1889804A CN 200610088186 CN200610088186A CN1889804A CN 1889804 A CN1889804 A CN 1889804A CN 200610088186 CN200610088186 CN 200610088186 CN 200610088186 A CN200610088186 A CN 200610088186A CN 1889804 A CN1889804 A CN 1889804A
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Abstract
A by-pass protective device of local damage at semiconductor luminous tube LED lamp is prepared as parallel-connecting a protective by-pass on each semiconductor luminous tube LED lamp bulb, providing current by-pass for damaged LED lamp bulb according by corresponding protective device to maintain complete lightening lamps and lanterns to work properly and continuously when any semiconductor luminous tube LED lamp bulb is damaged.
Description
Technical field
The invention discloses a kind of semiconductor luminotron lamp local damage bypass protector.
Background technology
The street lamp that uses on the road is 150W-400W mostly at present, and consumed power is very big, brings very big pressure to energy supply, and only could use normally under the situation of electric power abundance.When supply of electric power occurs when in short supply, the illumination of street lamp will be restricted.In addition, in actual applications, consider that for economize on electricity the brightness of street lamp need be regulated in different time sections, as the dead of night, street lamp will be transferred secretlyer, with electrical energy saving.And general street lamp adopts common fluorescent lamp or sodium vapor lamp, for brightness being reduced, can only be allowed to condition at the state work down that is lower than rated power, very easily damage fluorescent tube being lower than to work under the abnormal operating state of its rated power for a long time, make that the fluorescent tube turnover rate is too high, maintenance cost significantly rises.
Therefore, the new technology that has now occurred the semiconductor luminotron lamp illumination gradually, the semiconductor luminotron illuminating lamp has ten big characteristics: volume is little, in light weight, brightness is high, energy consumption is low, the life-span is long, safe, colorimetric purity is high, good directionality, maintenance cost are low, environment friendly and pollution-free, illuminating product can provide the luminous environment of high-quality, promote the light efficiency of illuminator, improve dazzle, reduce and the elimination light pollution.
Because semiconductor luminotron LED power consumption is little, long service life (life-span is more than 100,000 hours in theory), thereby have great advantage at tool aspect energy-conservation and the cost control.LED white-light illuminating lamp is compared with the fluorescent lamp halogen lamp with conventional incandescent, theoretically, all has absolute predominance at aspects such as power consumption, life-span, environmental protection.The LED bulb power consumption of equal brightness has only 10% of incandescent lamp.Its life-span can reach 100,000 hours, than long 10 times of fluorescent lamp, than long 100 times of incandescent lamp.Provide illumination if adopt some high power semi-conductor luminous tube LED serial or parallel connections to be packaged into lighting bulb, the quantity of the high power semi-conductor luminous tube LED that can enable by controller control (concrete quantity according to required brightness settings, technical) and change lamplight brightness easily by subregion control realization to semiconductor luminotron LED.
The semiconductor luminotron LED lighting modes of many semiconductor luminotron LED bulb series connection that adopt increase power and illumination more, but ubiquitous problem is for satisfying multiple connecting, the connection of semiconductor luminotron LED lamp is all for being in series or parallel connection, semiconductor luminotron LED lamp is as adopting cascaded structure, if there is not shunting device, any one semiconductor luminotron LED bulb damages (open circuit), the capital causes whole loop current to open circuit, and other the semiconductor luminotron LED bulb that does not have damage is also no longer luminous because of the no current cisco unity malfunction.Semiconductor luminotron LED lamp is as adopting parallel-connection structure, damaging several light still can normally use, but can not damage too many, if damage too many, stabilized voltage power supply can be added to average electric current on other semiconductor luminotron LED lamp, so can burn more semiconductor luminotron LED bulb, after-current in parallel in addition is very big, heat is also very high comparatively speaking, the too high damage LED bulb that will be serious of heat, the life-span of minimizing LED lamp, therefore, existing LED light fixture adopts cascaded structure more, also damages the problem that causes whole light fixture to use with regard to having above-mentioned indivedual bulb inevitably.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of semiconductor luminotron LED lamp local damage bypass protector; in the lighting that it is applied to be composed in series by a plurality of semiconductor luminotron LED bulbs, whole lighting works on when certain or a plurality of semiconductor luminotron LED bulb damage (open circuit).
The technical solution adopted in the present invention is:
Semiconductor luminotron LED lamp local damage bypass protector is made of the protection bypass that is connected on each semiconductor luminotron LED lamp, and each protection bypass is made up of thyristor SCR, voltage-stabiliser tube W, resistance R 1, R2,
Voltage-stabiliser tube W connects with resistance R 1 and constitutes circuits for triggering,
The anode of voltage-stabiliser tube W is connected with the trigger electrode G of thyristor through resistance R 1, and an end of the negative electrode of voltage-stabiliser tube W and the anode A of thyristor and resistance R 2 is connected to form the exit 1 of protection bypass,
The negative electrode K of thyristor forms the exit 2 of protection bypass,
The other end of resistance R 2 forms the exit 3 of protection bypass,
The invention has the beneficial effects as follows:
In the lighting that is composed in series by a plurality of semiconductor luminotron LED bulbs certain or a plurality of semiconductor luminotron LED bulb damage (open circuit), corresponding protective device provides current bypass for it; work on to keep whole lighting, can effectively solve indivedual semiconductor luminotron LED bulbs and damage the problem that causes whole light fixture cisco unity malfunction.It has easy for installation, volume is little, in light weight, energy consumption is low, safe, maintenance cost is low, environment friendly and pollution-free of fine qualityly compare with additive method, have characteristics such as cost is low, good reliability, highly versatile, can be widely used in the various lightings that are composed in series by a plurality of LED bulbs.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention.
Fig. 2 is the circuit diagram of a protection bypass.
Embodiment
The present invention is described further below in conjunction with accompanying drawing.
As depicted in figs. 1 and 2, LAMP1, LAMP2, LAPM3 ... LAMP N is the semiconductor luminotron LED bulb of series connection.A protection of each semiconductor luminotron lamp bubble configuration bypass.In the protection bypass: SCR is a unidirectional thyristor, and W is a voltage-stabiliser tube, and R1 is a current-limiting resistance, and R2 is a starting resistance, and I is a constant-current source.Its circuit connects; voltage-stabiliser tube W connects with resistance R 1 and constitutes circuits for triggering; the anode of voltage-stabiliser tube W is connected with the trigger electrode G of thyristor through resistance R 1; one end of the negative electrode of voltage-stabiliser tube W and the anode A of thyristor and resistance R 2 is connected to form the exit 1 of protection bypass; the negative electrode K of thyristor forms the exit 2 of protection bypass; the other end of resistance R 2 forms the exit 3 of protection bypass; exit 1 is connected with semiconductor luminotron LED lamp is anodal; exit 2 is connected with semiconductor luminotron LED lamp negative pole, and exit 3 is connected with positive source.
The concrete operation principle of protection bypass is: when semiconductor luminotron LED bulb operate as normal; because the conducting voltage of voltage-stabiliser tube w is greater than the normal working voltage of semiconductor luminotron LED bulb; voltage-stabiliser tube is in cut-off state, and this moment, thyristor was in high resistant (ending) state.When semiconductor luminotron LED luminous tube damages (open circuit), because the effect of constant-current source, the voltage of the semiconductor luminotron LED bulb side that damages can promote rapidly, the voltage-stabiliser tube both end voltage reaches the breakover voltage conducting, be forward voltage between thyristor anode A and the negative electrode K, be forward voltage between trigger electrode G and negative electrode K, be low-resistance (conducting) state between thyristor A, K, for the semiconductor luminotron LED bulb that damages provides current bypass, the semiconductor luminotron LED bulb that does not influence other works on.
By constant-current source I, N semiconductor luminotron LED bulb (LED1, LED2, LED3, LED N) in the circuit loop that is composed in series, if there is not shunting device, any one semiconductor luminotron LED bulb damages (open circuit) as can be seen, the capital causes whole loop current to open circuit, and other the semiconductor luminotron LED bulb that does not have damage is not luminous because of no current yet yet.In each semiconductor luminotron LED bulb parallel connection behind the shunting device, when certain semiconductor luminotron LED bulb damages (open circuit), because the effect of constant-current source, (open circuit) semiconductor luminotron LED bulb that damages, the voltage at two ends can improve rapidly, thereby triggering semiconductor luminotron LED lamp local damage bypass device is low-resistance (conducting) state by high resistant (ending) state-transition, other N semiconductor luminotron LED bulb continues to keep to have solved the problem of the whole loop open circuit that causes because of one or more semiconductor luminotron LED bulbs damages (open circuit) by galvanoluminescence.
Semiconductor luminotron LED lamp local damage protection shunting device; can carry out various dissimilar encapsulation and make circuit module; can encapsulate separately and make circuit module; also a plurality of semiconductor luminotron LED lamp local damage bypass devices can be assembled on the circuit board; can encapsulate and make all size, various types of circuit module; above-mentioned diagram and be described as optimized technical scheme; but; those skilled in the art should understand, and can do the various variations on form and the details on this basis.
Claims (1)
1, a kind of semiconductor luminotron lamp local damage bypass protector is made of the protection bypass that is connected on each semiconductor luminotron lamp, and each protection bypass is made up of thyristor SCR, voltage-stabiliser tube W, resistance R 1, R2, it is characterized in that:
Voltage-stabiliser tube W connects with resistance R 1 and constitutes circuits for triggering,
The anode of voltage-stabiliser tube W is connected with the trigger electrode G of thyristor through resistance R 1, and an end of the negative electrode of voltage-stabiliser tube W and the anode A of thyristor and resistance R 2 is connected to form the exit 1 of protection bypass,
The negative electrode K of thyristor forms the exit 2 of protection bypass,
The other end of resistance R 2 forms the exit 3 of protection bypass,
Exit 1 is connected with semiconductor luminotron lamp is anodal, and exit 2 is connected with the semiconductor luminotron lamp negative pole, and exit 3 is connected with positive source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610088186 CN1889804A (en) | 2006-06-30 | 2006-06-30 | Semiconductor luminotron lamp local damage bypass protector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610088186 CN1889804A (en) | 2006-06-30 | 2006-06-30 | Semiconductor luminotron lamp local damage bypass protector |
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| CN1889804A true CN1889804A (en) | 2007-01-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200610088186 Pending CN1889804A (en) | 2006-06-30 | 2006-06-30 | Semiconductor luminotron lamp local damage bypass protector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101917790A (en) * | 2010-07-15 | 2010-12-15 | 缪晴文 | LED illumination equipment and Open-circuit breakover element thereof |
| CN101969720A (en) * | 2010-09-15 | 2011-02-09 | 成都芯源系统有限公司 | LED bypass control circuit and control method |
| CN102143623A (en) * | 2010-02-01 | 2011-08-03 | 深圳市宏啟光电有限公司 | Drive circuit for LED (light-emitting diode) lamp and short-circuit proof elements of drive circuit |
| CN103237393A (en) * | 2013-05-11 | 2013-08-07 | 兰如根 | Flashing circuit of light emitting diode (LED) lamp |
| CN108886854A (en) * | 2016-04-11 | 2018-11-23 | 伊顿智能动力有限公司 | Failure safe LED information display system |
-
2006
- 2006-06-30 CN CN 200610088186 patent/CN1889804A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102143623A (en) * | 2010-02-01 | 2011-08-03 | 深圳市宏啟光电有限公司 | Drive circuit for LED (light-emitting diode) lamp and short-circuit proof elements of drive circuit |
| CN101917790A (en) * | 2010-07-15 | 2010-12-15 | 缪晴文 | LED illumination equipment and Open-circuit breakover element thereof |
| CN101969720A (en) * | 2010-09-15 | 2011-02-09 | 成都芯源系统有限公司 | LED bypass control circuit and control method |
| CN101969720B (en) * | 2010-09-15 | 2013-09-18 | 成都芯源系统有限公司 | LED bypass control circuit and control method |
| CN103237393A (en) * | 2013-05-11 | 2013-08-07 | 兰如根 | Flashing circuit of light emitting diode (LED) lamp |
| CN108886854A (en) * | 2016-04-11 | 2018-11-23 | 伊顿智能动力有限公司 | Failure safe LED information display system |
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Open date: 20070103 |