CN1881397A - Electrooptical device and electronic apparatus - Google Patents
Electrooptical device and electronic apparatus Download PDFInfo
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- CN1881397A CN1881397A CNA2006100958177A CN200610095817A CN1881397A CN 1881397 A CN1881397 A CN 1881397A CN A2006100958177 A CNA2006100958177 A CN A2006100958177A CN 200610095817 A CN200610095817 A CN 200610095817A CN 1881397 A CN1881397 A CN 1881397A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0242—Compensation of deficiencies in the appearance of colours
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
This invention provides an electro-optical device including a plurality of scanning beams, data lines, electro optic cells and a plurality of power lines crossed with these data lines. These electro optic cells comprise the electro optic cells used in the first color and in the second color. The power lines include the first power line that supplies the first driving voltage used in the first electro optic cells and the second power line that supplies the second driving voltage used in the second electro optic cells. The first color electro optic cell adjoins the second color electro optic cell, and they configure along one of the data lines mentioned above.
Description
The application is that application number is " 200510126802.8 ", and denomination of invention is " electronic circuit and driving method, electro-optical device and an electronic equipment ", and the applying date is dividing an application of on August 29th, 2003.
Technical field
The present invention relates to driving method, electro-optical device, method of driving electro-optical device and the electronic equipment of electronic circuit, electronic circuit.
Background technology
In recent years, the electro-optical device that has a plurality of electrooptic cells as the large screen display device use, pursue high excellenceization or big pictureization, echo mutually therewith, improve the proportion to passive drive type electro-optical device of the active matrix drive-type electro-optical device of the pixel circuit that has each electrooptic cell that is used for driving a plurality of electrooptic cells more.But,, need critically to control respectively electrooptic cell in order to realize further high excellenceization or big pictureization.Therefore, must be to scattered the compensating of characteristic of the active element that constitutes pixel circuit.
As to the scattered compensation method of the characteristic of active element, for example, proposed to have that to be used for compensation characteristic scattered, comprise the display device (for example, please refer to patent documentation 1) of the transistorized pixel circuit that diode connects.
[patent documentation 1] Japan puts down into 11 years 11-272233 patent gazettes of announcing
, to the scattered pixel circuit that compensates of the characteristic of active element, generally be to constitute by the transistor more than 4, therefore, cause the low of yield rate and aperture rate.
One object of the present invention will be removed the problems referred to above exactly, and the electronic circuit that can cut down the transistorized number that constitutes pixel circuit or unit circuit, driving method, electro-optical device, method of driving electro-optical device and the electronic equipment of electronic circuit are provided.
Summary of the invention
The feature of the 1st electronic circuit of the present invention is that it has to have and has the 1st terminal a plurality of comprising, the 2nd terminal and the 1st control the 1st transistor of terminal, have the 3rd terminal, the 4th terminal and the 2nd control terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode is controlled the capacity cell that is connected with terminal with the above-mentioned the 1st, with have the 5th terminal and the 6th terminal, the 3rd transistorized unit circuit that above-mentioned the 5th terminal is connected with above-mentioned the 2nd electrode, above-mentioned the 4th terminal is connected with the 1st power lead with other above-mentioned the 4th terminal of unit circuit of above-mentioned a plurality of unit circuits, the potential setting of above-mentioned the 1st power lead on a plurality of current potentials, is perhaps controlled the control circuit that above-mentioned the 1st power lead is disconnected with the TURP of driving voltage and be electrically connected.
In above-mentioned electronic circuit, above-mentioned the 2nd terminal was connected with above-mentioned the 1st power lead, above-mentioned the 2nd terminal is connected with the 2nd power lead different with above-mentioned the 1st power lead.The feature of the 2nd electronic circuit of the present invention is that it has to have and has the 1st terminal a plurality of comprising, the 2nd terminal and the 1st control the 1st transistor of terminal, have the 3rd terminal, the 4th terminal and the 2nd control terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode is controlled the capacity cell that is connected with terminal with the above-mentioned the 1st, with have the 5th terminal and the 6th terminal, the 3rd transistorized unit circuit that above-mentioned the 5th terminal is connected with above-mentioned the 2nd electrode, above-mentioned the 4th terminal is connected with the 1st power lead with other above-mentioned the 4th terminal of unit circuit of above-mentioned a plurality of unit circuits, above-mentioned the 2nd terminal is connected with the 2nd power lead, the potential setting of above-mentioned the 1st power lead on a plurality of current potentials, is perhaps controlled the control circuit that above-mentioned the 1st power lead is disconnected with the TURP of driving voltage and be electrically connected.
The formation such according to above-mentioned electronic circuit can be cut down the number of transistors that constitutes above-mentioned unit circuit.
In above-mentioned electronic circuit, preferably above-mentioned the 2nd control is connected with above-mentioned the 3rd terminal with terminal.
For example, preferably use terminal as drain and gate above-mentioned the 3rd terminal and above-mentioned the 2nd control respectively.Therefore, can be with the transistor of above-mentioned the 2nd transistor as above-mentioned the 1st transistorized threshold voltage of compensation.
In above-mentioned electronic circuit, be preferably in the transistor that does not comprise in above-mentioned each unit circuit beyond above-mentioned the 1st transistor, above-mentioned the 2nd transistor and above-mentioned the 3rd transistor.
Therefore, can simultaneously compensate the above-mentioned the 1st transistorized threshold voltage, the number of transistors that one side is cut down above-mentioned unit circuit.
In above-mentioned electronic circuit, preferably above-mentioned the 1st transistor is identical with the above-mentioned the 2nd transistorized conductivity type.
If according to this point, then, can easily compensate the 1st transistorized threshold voltage by adjusting the 2nd transistorized threshold voltage.
In above-mentioned electronic circuit, electronic component also can be connected with above-mentioned the 1st terminal.
In above-mentioned electronic circuit, above-mentioned electronic component for example, is current driving element and electrooptic cell, resistive element, diode, memory element etc.
In above-mentioned electronic circuit, above-mentioned control circuit is the 4th transistor that has the 7th terminal and the 8th terminal, and above-mentioned the 7th terminal is connected with above-mentioned the 4th terminal by above-mentioned the 1st power lead, and above-mentioned the 8th terminal is connected with above-mentioned driving voltage.
If according to this point, then can easily constitute control circuit.
In above-mentioned electronic circuit, above-mentioned the 2nd power lead also can be electrically connected with above-mentioned driving voltage.
In above-mentioned electronic circuit, it is low unlike the above-mentioned the 2nd transistorized threshold voltage preferably to set the above-mentioned the 1st transistorized threshold voltage.
If according to this point, then can positively compensate the 1st transistorized threshold value.
Be about to when the above-mentioned the 1st transistorized threshold value being compensated, also above-mentioned the 1st transistor to be set in nonconducting state with above-mentioned the 2nd transistor again.
On the contrary, in above-mentioned electronic circuit, also can be more than the above-mentioned the 2nd transistorized threshold voltage with the above-mentioned the 1st transistorized threshold voltage settings.
At this moment, by only the above-mentioned the 1st transistorized threshold voltage being compensated, can make above-mentioned the 2nd transistor be in on-state with above-mentioned the 2nd transistor.
The feature of the 3rd electronic circuit of the present invention is that it is to comprise many articles the 1st signal wires, many articles the 2nd signal wires, the electronic circuit of many power leads and a plurality of unit circuits, each unit circuit in above-mentioned a plurality of unit circuit comprises and has the 1st terminal, the 2nd terminal and the 1st control the 1st transistor of terminal, have the 3rd terminal, the 4th terminal and the 2nd control terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode is controlled the capacity cell that is connected with terminal with the above-mentioned the 1st, with have the 5th terminal, the 6th terminal and the 3rd control terminal, the 3rd transistor that above-mentioned the 5th terminal is connected with above-mentioned the 2nd electrode, above-mentioned the 2nd control is connected with above-mentioned the 3rd terminal with terminal, above-mentioned the 3rd control corresponding the 1st signal wire connection in terminal and above-mentioned many articles the 1st signal wires.In above-mentioned electronic circuit, preferably having above-mentioned the 4th terminal is connected with the 1st power lead with above-mentioned the 4th terminal of other unit circuit of above-mentioned a plurality of unit circuits, above-mentioned the 2nd terminal is connected with the 2nd power lead, the potential setting of above-mentioned the 1st power lead on a plurality of current potentials, is perhaps controlled the control circuit that above-mentioned the 1st power lead is disconnected with the TURP of driving voltage and be electrically connected.
If according to this point, then can cut down the number of transistors that constitutes above-mentioned unit circuit.
In above-mentioned electronic circuit, preferably above-mentioned the 1st transistor is identical with the above-mentioned the 2nd transistorized conductivity type.
If according to this point, then can easily compensate the 1st transistorized threshold voltage by adjusting the 2nd transistorized threshold voltage.
In above-mentioned electronic circuit, electronic component also can be connected with above-mentioned the 1st terminal.
In above-mentioned electronic circuit, above-mentioned electronic component for example, is current driving element and electrooptic cell, resistive element, diode, memory element etc.
On the contrary in above-mentioned electronic circuit, also can be below the above-mentioned the 2nd transistorized threshold voltage with the above-mentioned the 1st transistorized threshold voltage settings.
The feature of the 4th electronic circuit of the present invention is in having the electronic circuit of a plurality of unit circuits, each unit circuit that has in above-mentioned a plurality of unit circuit comprises the holding element that signal is kept as electric charge, control to the switching transistor of transmission of the above-mentioned signal of above-mentioned holding element, set the driving transistors of conducting state according to the electric charge that in above-mentioned holding element, keeps, with before above-mentioned signal is transferred to above-mentioned holding element with the control of above-mentioned driving transistors with terminal be set in decide adjustment transistor on the current potential, driving voltage is offered the transistorized control circuit of above-mentioned adjustment of at least 2 unit circuits in above-mentioned a plurality of unit circuit.
In above-mentioned electronic circuit, electronic component also can be connected with above-mentioned driving transistors.
In above-mentioned electronic circuit, above-mentioned electronic component for example, is current driving element and electrooptic cell, resistive element, diode, memory element etc.
The feature of the driving method of electronic circuit of the present invention is that it is to have to comprise to have the 1st terminal, the 2nd terminal and the 1st control the 1st transistor of terminal, have the 3rd terminal and the 4th terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, have the 1st electrode and the 2nd electrode, the driving method of the electronic circuit of a plurality of unit circuits of the capacity cell that above-mentioned the 1st electrode and above-mentioned the 1st control are connected with terminal, comprising above-mentioned each the 3rd terminal that makes above-mentioned a plurality of unit circuits is electrically connected with deciding current potential, and above-mentioned the 1st control is set in the 1st step on the 1st current potential with terminal, with above-mentioned the 3rd terminal is decided the disconnected state of current potential TURP from above-mentioned, the current potential by making above-mentioned the 2nd electrode makes above-mentioned the 1st control with 2nd step of terminal from above-mentioned the 1st potential change from the 2nd potential change to the 3 current potentials.
If according to this point, then can simultaneously compensate the 1st transistorized threshold voltage, one side is cut down the number of transistors that constitutes above-mentioned electronic circuit.
In the driving method of above-mentioned electronic circuit, carry out at least above-mentioned the 1st step during in the state of potential setting on above-mentioned the 2nd current potential, carry out above-mentioned the 2nd electrode.
In addition, in the driving method of above-mentioned electronic circuit, so-called " above-mentioned the 3rd terminal is electrically connected with deciding current potential " refers to, for example, make electric current flow into the state of above-mentioned the 3rd terminal by above-mentioned the 4th terminal, so-called " above-mentioned the 3rd terminal and decide current potential TURP are broken " refers to, and for example, do not make the state of electric current inflow by above-mentioned the 4th terminal.
The 1st electro-optical device of the present invention has many data lines, the multi-strip scanning line, with a plurality of unit circuits, it is characterized in that: described a plurality of unit circuits comprise the 1st terminal, the 2nd terminal and the 1st control the 1st transistor of terminal, the electrooptic cell that is connected with above-mentioned the 1st terminal, have the 3rd terminal and the 4th terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode is controlled the capacity cell that is connected with terminal with the above-mentioned the 1st, with have the 5th terminal, the 6th terminal and the 3rd control terminal, the 3rd transistor that above-mentioned the 5th terminal is electrically connected with above-mentioned the 2nd electrode; Above-mentioned the 4th terminal is connected with the 1st power lead with above-mentioned the 4th terminal of other unit circuit of above-mentioned a plurality of unit circuits, above-mentioned the 3rd control is connected with corresponding scanning line in the above-mentioned multi-strip scanning line with terminal, above-mentioned the 6th terminal is connected with corresponding data line in above-mentioned many data lines, has potential setting with above-mentioned the 1st power lead on a plurality of current potentials or control the control circuit that above-mentioned the 1st power lead is disconnected with the TURP of driving voltage and be electrically connected.
If according to above-mentioned electro-optical device, then one side compensates the 1st transistorized threshold voltage, and one side is cut down the number of transistors that constitutes pixel circuit.
This can improve the aperture rate of a pixel and improve the yield rate of making.
In above-mentioned electro-optical device, preferably above-mentioned the 2nd control is connected with above-mentioned the 3rd terminal with terminal.
In above-mentioned electro-optical device, above-mentioned control circuit is the 4th transistor that has the 7th terminal and the 8th terminal, and above-mentioned the 7th terminal is connected with above-mentioned the 4th terminal by above-mentioned the 1st power lead, and above-mentioned the 8th terminal is connected with above-mentioned driving voltage.
If according to this point, then can constitute control circuit simply.
In above-mentioned electro-optical device, be preferably in above-mentioned each unit circuit, there is not above-mentioned the 1st transistor, above-mentioned the 2nd transistor and above-mentioned the 3rd transistor transistor in addition.
If, then can provide electro-optical device with high aperture rate according to this point.
In above-mentioned electro-optical device, above-mentioned the 1st transistor is identical with the above-mentioned the 2nd transistorized conductivity type.
If according to this point, then can positively compensate the 1st transistorized threshold voltage.
In above-mentioned electro-optical device, preferably must be low unlike the above-mentioned the 2nd transistorized threshold voltage with the above-mentioned the 1st transistorized threshold voltage settings.
Specifically, also can set unlike the above-mentioned the 2nd corresponding in pixel transistorized grid length weak point in order to make the above-mentioned the 1st transistorized grid length.
Perhaps, also can approach and set unlike the above-mentioned the 2nd corresponding in pixel transistorized gate insulating film in order to make the above-mentioned the 1st transistorized gate insulating film.
Perhaps, also can be by adjust injecting the impurity concentration of raceway groove, make the above-mentioned the 1st transistorized threshold voltage low and set unlike the above-mentioned the 2nd corresponding in pixel transistorized threshold voltage.
Preferably above-mentioned the 1st transistor is worked in the zone of saturation.
If according to this point, then can positively compensate the 1st transistorized threshold voltage that is arranged in the pixel circuit.Thereby, can control the brightness grade of electrooptic cell accurately.
On the contrary in above-mentioned electro-optical device, also can be below the above-mentioned the 2nd transistorized threshold voltage with the above-mentioned the 1st transistorized threshold voltage settings.
In above-mentioned electro-optical device, above-mentioned the 2nd power lead also can be electrically connected with above-mentioned driving voltage.
In above-mentioned electro-optical device, above-mentioned electrooptic cell for example is an EL element.
In above-mentioned electro-optical device,, dispose homochromy electrooptic cell preferably along above-mentioned sweep trace.
The feature of the 1st method of driving electro-optical device of the present invention is that it is that cross section with multi-strip scanning line and many data lines disposes accordingly to comprise and has the 1st terminal, the 2nd terminal and the 1st control the 1st transistor of terminal, the electrooptic cell that is connected with above-mentioned the 1st terminal, have the 3rd terminal and the 4th terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, with have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode and the above-mentioned the 1st is controlled the method for driving electro-optical device of a plurality of unit circuits of the capacity cell that is connected with terminal, it is included in above-mentioned a plurality of unit circuit, by above-mentioned the 4th terminal and the above-mentioned the 2nd transistorized raceway groove above-mentioned the 3rd terminal that comprises the 3rd transistorized a succession of unit circuit that the 3rd control is connected with 1 sweep trace in the above-mentioned multi-strip scanning line with terminal is electrically connected with deciding current potential, above-mentioned the 1st control is set in the 1st step on the 1st current potential with terminal, supply with above-mentioned the 3rd control of above-mentioned a succession of unit circuit with the sweep signal that will make above-mentioned the 3rd transistor be in on-state and use terminal, after making above-mentioned the 3rd transistor be in on-state and above-mentioned many data line corresponding data line are electrically connected, by being added on above-mentioned the 2nd electrode through the data-signal of above-mentioned corresponding data line and the supply of above-mentioned the 3rd transistor, the current potential that makes above-mentioned the 2nd electrode is from the 2nd potential change to the 3 current potentials, make above-mentioned the 1st control 2nd step of the current potential of terminal from above-mentioned the 1st potential change, in above-mentioned the 2nd step, for make add on above-mentioned the 2nd electrode above-mentioned data-signal during and above-mentioned the 3rd terminal that makes above-mentioned a succession of unit circuit from above-mentioned decide the current potential TURP from during at least a portion coincidence and setting.
The cross section of the 2nd method of driving electro-optical device of the present invention and multi-strip scanning line and many data lines disposes accordingly to comprise and has the 1st terminal, the 2nd terminal and the 1st control the 1st transistor of terminal, the electrooptic cell that is connected with above-mentioned the 1st terminal, have the 3rd terminal and the 4th terminal, above-mentioned the 3rd terminal is controlled the 2nd transistor that is connected with terminal with the above-mentioned the 1st, with have the 1st electrode and the 2nd electrode, above-mentioned the 1st electrode and the above-mentioned the 1st is controlled a plurality of unit circuits of the capacity cell that is connected with terminal, in above-mentioned a plurality of unit circuits, comprising above-mentioned the 4th terminal that makes the 3rd transistorized a succession of unit circuit that the 3rd control is connected with 1 sweep trace in the above-mentioned multi-strip scanning line with terminal is electrically connected with 1 article of the 1st power lead in whole a plurality of the 1st power leads, it is characterized in that: above-mentioned the 4th terminal that comprises by making above-mentioned a succession of unit circuit is electrically connected with deciding current potential, above-mentioned the 1st control is set in the 1st step of the 1st current potential with terminal, supply with above-mentioned the 3rd control of above-mentioned a succession of unit circuit with the sweep signal that will make above-mentioned the 3rd transistor be in on-state and use terminal, after making above-mentioned the 3rd transistor be in on-state and above-mentioned many data line corresponding data line are electrically connected, by being added on above-mentioned the 2nd electrode through the data-signal of above-mentioned corresponding data line and the supply of above-mentioned the 3rd transistor, the current potential that makes above-mentioned the 2nd electrode is from the 2nd potential change to the 3 current potentials, make above-mentioned the 1st control 2nd step of the current potential of terminal from above-mentioned the 1st potential change, in above-mentioned the 2nd step, for make add on above-mentioned the 2nd electrode above-mentioned data-signal during and above-mentioned the 4th terminal of above-mentioned a succession of unit circuit from above-mentioned decide the current potential TURP from during at least a portion coincidence and setting.
In above-mentioned method of driving electro-optical device, carry out at least above-mentioned the 1st step during in the state of potential setting on above-mentioned the 2nd current potential, carry out above-mentioned the 2nd electrode.
Therefore, the current potential of above-mentioned the 1st control with terminal correctly can be set on the current potential corresponding with above-mentioned data-signal.
The feature of the 1st electronic equipment of the present invention is that above-mentioned electronic circuit is installed.
The feature of the 2nd electronic equipment of the present invention is that above-mentioned electro-optical device is installed.
In foregoing invention, the 1st transistor and driving transistors, the 1st and the 2nd terminal, the 1st control control terminal of terminal and driving transistors, as an example, in the pixel circuit shown in Figure 3 20 of example described later, the grid with the drain electrode of driving transistors Trd, driving transistors Trd and source electrode, driving transistors Trd is corresponding respectively.
Again, the 2nd transistor and adjustment are used terminal with transistor, the 3rd and the 4th terminal, the 2nd control, as an example, in the pixel circuit shown in Figure 3 20 of this example, use transistor Tr c, driving transistors as adjusting respectively.
Further, the 3rd transistor, the 5th terminal, the 6th terminal, the 3rd control terminal, as an example, in the pixel circuit shown in Figure 3 20 of this example, the grid with the drain electrode (terminal that is connected with data line Xm) of the source electrode (terminal that is connected with capacitor C 1) of switching transistor Trs, switch drive transistor Tr s, switch drive transistor Tr s, switch drive transistor Tr s is corresponding respectively.
Description of drawings
Fig. 1 is the frame circuit diagram that the circuit of the OLED display of this example of expression constitutes.
Fig. 2 is the frame circuit diagram of the internal circuit formation of the active matrix part of expression the 1st example and data line drive circuit.
Fig. 3 is the circuit diagram of the pixel circuit of the 1st example.
Fig. 4 is the timing diagram of driving method that is used to illustrate the pixel circuit of the 1st example.
Fig. 5 is the frame circuit diagram of the internal circuit formation of the active matrix part of expression the 2nd example and data line drive circuit.
Fig. 6 is the oblique view of the formation of the expression active personal computer that is used to illustrate the 3rd example.
Fig. 7 is the oblique view of the formation of the expression portable phone that is used to illustrate the 3rd example.Wherein:
C1---as the electric capacity of capacity cell or holding element
La---the 1st electrode
Lb---the 2nd electrode
Trd---as the 1st transistorized driving transistors
Trc---as the 2nd transistorized driving transistors
Trs---as the 3rd transistorized switching transistor
Q---as the 4th transistorized control transistor
Vdata---signal data voltage
Vdd---driving voltage
Yn---sweep trace
Xm---data line
10---as the OLED display of electro-optical device
20---as the pixel circuit of unit circuit
21---as the organic EL of electronic component or current driving element
50---as the active personal computer of electronic equipment
60---as the portable phone of electronic equipment
Embodiment
(the 1st example)
Below, we illustrate the 1st example that the present invention is specialized according to Fig. 1～4.Fig. 1 is the frame circuit diagram of expression as the circuit formation of the OLED display of electro-optical device.Fig. 2 is the frame circuit diagram that the internal circuit of expression active matrix part and data line drive circuit constitutes.Fig. 3 is the circuit diagram of pixel circuit.Fig. 4 is the timing diagram that is used to illustrate the driving method of pixel circuit.
OLED display 10 as shown in Figure 1, has signal generating circuit 11, active matrix part 12, scan line drive circuit 13, data line drive circuit 14 and power source line control circuit 15.
The signal generating circuit 11 of OLED display 10, scan line drive circuit 13, data line drive circuit 14 and power source line control circuit 15 also can be respectively be made of electronic unit independently.For example, signal generating circuit 11, scan line drive circuit 13, data line drive circuit 14 and power source line control circuit 15 also can be respectively be made of the conductor integrated circuit device of 1 chip block.Again signal generating circuit 11, scan line drive circuit 13, data line drive circuit 14 and power source line control circuit 15 also can be all or a part constitute by programmable IC chip, its function is by the program software ground realization that writes the IC chip.
Signal generating circuit 11 makes scan control signal and the data controlling signal that is used for displayed image on active matrix part 12 according to the pictorial data from unillustrated external device (ED) among the figure.And signal generating circuit 11 outputs to scan line drive circuit 13 with scan control signal, and data controlling signal is outputed to data line drive circuit 14.Further, signal generating circuit 11 is to power source line control circuit 15 output timing controling signals.
Active matrix part 12 as shown in Figure 2, has the electronic circuit that the pixel circuit 20 as a plurality of unit circuits of the organic EL 21 with the electronic component that is made of organic material as luminescent layer or electrooptic cell is set rectangularly.That is, pixel circuit 20 is provided in and the M bar data line Xm (m=1～M that extends along column direction; M is an integer) and follow N bar sweep trace Yn (n=1～n that direction is extended; N is an integer) the position of cross section correspondence on.
Again, pixel circuit 20 is connected with the 2nd power lead L2 with the 1st power lead L1 that line direction along it extends.The 1st is connected along the voltage supply line VL that column direction extends with the pixel circuit 20 of the right-hand member side that is arranged on active matrix part 12 respectively with the 2nd power lead L1, L2.Dispose and be formed on that transistors described later in the pixel circuit 20 normally are made of TFT (thin film transistor (TFT)) again.
Scan line drive circuit 13 according to the scan control signal from signal generating circuit 11 outputs, among the N bar sweep trace Yn from be arranged on active matrix part 12, is selected 1 sweep trace, and sweep signal is supplied with the sweep trace that this selects.
Data line drive circuit 14 has a plurality of single line drives 23.Each single line drive 23 respectively be arranged on active matrix part 12 in corresponding data line Xm be connected.Single line drive 23 respectively, the data controlling signal according to from signal generating circuit 11 output generates signal data voltage Vdata.Again, single line drive 23 outputs to pixel circuit 20 by the data voltage Vdata that data line Xm will generate.Pixel circuit 20, corresponding with the data voltage Vdata of this output, set the internal state of identical pixel circuit 20, the drive current Ie1 (please refer to Fig. 3) that flows through each organic EL 21 is controlled, can control the brightness grade of organic EL 21.Again, the single line drive 23 of each of data line drive circuit 14, T1 during data described later write will supply with each pixel circuit 20 with the bias voltage of the driving voltage Vdd same potential of supplying with from voltage supply line VL before supplying with data voltage Vdata.
Power source line control circuit 15 is connected with the grid of control described later with transistor Q by power lead control line F.Power source line control circuit 15, according to timing controling signal from signal generating circuit 11, with sweep signal fully or portion of time overlaps during, generate also to supply with to make and control the power lead control signal that is in on-state with transistor Q.And, when control is in on-state with transistor Q, driving voltage Vdd is supplied with pixel circuit 20 by the 1st power lead L1.
Below we illustrate the pixel circuit 20 of the active matrix part 12 that constitutes the OLED display 10 that constitutes like this.Be identical because the circuit of each pixel circuit 20 constitutes, so for for the purpose of the illustrative ease, we only illustrate 1 pixel circuit again.
Pixel circuit 20 as shown in Figure 3, has 3 transistors and 2 capacitors.In detail, pixel circuit 20 as shown in Figure 3, has driving transistors Trd, adjusts with transistor Tr c and switching transistor Trs.Again, pixel circuit 20 has the 1st capacitor C1 and the 2nd capacitor C2 as capacity cell or holding element.
Driving transistors Trd, adjustment use the conductivity type of transistor Q to be made of p type (p raceway groove) respectively with transistor Tr c and control.Again, the conductivity type of switching transistor Trs is made of n type (n raceway groove).
The drain electrode of driving transistors Trd is connected with the anode of organic EL 21.The plus earth of organic EL 21.Again, the source electrode of driving transistors Trd is connected with the 2nd power lead L2.The 2nd power lead L2 is connected with the voltage supply line VL of supply as the driving voltage Vdd of driving voltage.The grid of driving transistors Trd is connected with the drain electrode of transistor Tr c, the 3rd electrode Lc of the 2nd capacitor C2 with the 1st electrode La, the adjustment of the 1st capacitor C1.The static capacity of the 1st capacitor C1 is Ca, and the static capacity of the 2nd capacitor C2 is Cb.
The 2nd electrode Lb of the 1st capacitor C1 is connected with the source electrode of switching transistor Trs.The drain electrode of switching transistor Trs is connected with data line Xm.Again, the grid of switching transistor Trs is connected with sweep trace Yn.
The grid of adjusting with transistor Tr c is connected at node N with drain electrode.Adjust with the source electrode of transistor Tr c and be connected with the 1st power lead L1 with source electrode of transistor Tr c with other adjustment in being arranged on other pixel circuit 20.Use transistor Q by control, the 1st power lead L1 is connected with the voltage supply line VL of the right-hand member side that is arranged on active matrix part 12.In detail, control is connected with the 1st power lead L1 with the drain electrode of its 7th terminal of conduct of transistor Q.Use the source electrode of transistor Q to be connected as the control of the 8th terminal with voltage supply line VL.Again, control is connected with power lead control line F with the grid of transistor Q.Power lead control line F is connected with power source line control circuit 15.
Power source line control circuit 15 is supplied with by power lead control line F and is used for conducting control with transistor Q and to its power lead control signal SCF that controls.And, when when power source line control circuit 15 output makes control be in the power lead control signal SCF of on-state with transistor Q, make to control to be in on-state with transistor Q.As a result, driving voltage Vdd is added on the source electrode of adjusting with transistor Tr c.
The 4th electrode Ld of the 2nd capacitor C2 is connected with the 2nd power lead L2 with the source electrode of driving transistors Trd.
In this example, adjusting with transistor Tr c is roughly to equate with the threshold voltage vt h1 of driving transistors Trd and form for its threshold voltage vt h2.Again, driving voltage Vdd is for higher fully and set than data voltage Vdata.
Secondly, we illustrate the driving method of the pixel circuit 20 of the OLED display 10 that constitutes as described above according to Fig. 4.In addition, in Fig. 4, Tc, T1 and T2 represent respectively drive cycle, data write during and between light emission period.During drive cycle Tc is write by data between T1 and light emission period T2 constitute.Drive cycle Tc represents to upgrade the cycle of the brightness grade of organic EL 21, and is in this example, corresponding with frame.
At first, T1 during data write is in the off-state at switching transistor Trs, makes control be in the power lead control signal SCF of on-state with transistor Q from power source line control circuit 15 by power lead control line F output.So, make control be in on-state, therefore, driving voltage Vdd is outputed to and control the 1st power lead L1 that is connected with transistor Q with transistor Q.
Therefore, the source potential of adjusting with transistor Tr c becomes driving voltage Vdd, and grid potential, and promptly the current potential Vn of node N becomes the voltage (Vn=Vdd-Vth2) that deducts the threshold voltage (Vth2) of adjusting usefulness transistor Tr c from driving voltage Vdd.And, current potential Vn is remained among the 1st capacitor C1 and the 2nd capacitor C2 as initial potential Vc1, supply with the grid of driving transistors Trd.
Again, at this moment, make switching transistor Trs be in the sweep signal SC1 of off-state by sweep trace Yn to the grid supply of switching transistor Trs from scan line drive circuit 13, switching transistor Trs becomes off-state.
After this, make control be in the power lead control signal SCF of off-state with transistor Q from power source line control circuit 15 by power lead control line F output, control becomes off-state with transistor Q, and the source electrode of adjusting with transistor Tr c becomes the state disconnected with power source line control circuit 15 TURPs.As a result, adjust drain electrode with transistor Tr c become from driving voltage Vdd TURP from state, i.e. quick condition.
Then, make switching transistor Trs be in the sweep signal SC1 of on-state by sweep trace Yn to the grid supply of switching transistor Trs from scan line drive circuit 13, switching transistor Trs becomes on-state.
During switching transistor Trs becomes on-state, supply with data voltage Vdata by data line Xm and switching transistor Trs to pixel circuit 20 from data line drive circuit 14.
Therefore, initial voltage Vc1 becomes the static capacity Cb with the static capacity Ca of the 1st capacitor C1 and the 2nd capacitor C2, the value that is expressed from the next.
Vc1＝Vdd-Vth2+Ca/(Ca+Cb)·ΔVdata
Here, Δ Vdata be driving voltage Vdd and data voltage Vdata potential difference (PD) (=Vdd-Vdata).And, with the grid of this Vdd-Vth2+Ca/ (Ca+Cb) Δ Vdata as final current potential Vc2 supply driving transistors Trd.
With final current potential Vc2 correspondingly, set the conducting state of driving transistors Trd, will supply with organic EL 21 with this conducting state corresponding driving electric current I e1.When the potential difference (PD) with the grid voltage Vg of driving transistors Trd and source voltage Vs is expressed as Vgs, the following expression of this electric current I e1.
Ie1＝(1/2)β(-Vgs-Vth1)
2
Here, β is a gain coefficient, and the mobility of charge carrier rate is μ, and grid capacitance is A, and channel width is W, and channel length is L.Gain factors is β=(μ AW/L).In addition, the grid voltage Vg of driving transistors Trd is final current potential Vc2.That is the following expression of potential difference (PD) Vgs of the grid voltage Vg of driving transistors Trd and source voltage Vs.
Vgs＝Vdd-[Vdd-Vth2+Ca/(Ca+Cb)·ΔVdata]
Thereby, the following expression of drive current Ie1 of driving transistors Trd.
Ie1＝(1/2)β[Vth2-Ca/(Ca+Cb)·ΔVdata-Vth1]
2
Here, because adjust the threshold voltage vt h2 that uses transistor Tr c, as mentioned above, be in order roughly to equate and to set, so the following expression of drive current Ie1 with the threshold voltage vt h1 of driving transistors Trd.
Ie1＝(1/2)β[Vth2-Ca/(Ca+Cb)·ΔVdata-Vth1]
2
＝(1/2)β[Ca/(Ca+Cb)·ΔVdata]
2
Thereby shown in following formula, the threshold voltage vt h1 of drive current Ie1 and driving transistors Trd is irrelevant, becomes the big electric current corresponding with data voltage Vdata.And, this drive current Ie1 is supplied with organic EL 21, make organic EL 21 luminous.
Secondly, after T1 finished during data write, T2 between light emission period made switching transistor Trs be in the sweep signal SC1 of off-state by sweep trace Yn to the grid supply of switching transistor Trs from scan line drive circuit 13, so, switching transistor Trs becomes off-state.
T2 between this light emission period, the conducting state corresponding driving electric current I e1 of the driving transistors Trd that will correspondingly set with final current potential Vc2 supplies with organic EL 21.
As shown above, even if the threshold voltage vt h1 of the driving transistors Trd of each pixel circuit 20 since make scattered and different, drive current Ie1 is also determined by data voltage Vdata.Therefore, can control the brightness grade of organic EL 21 accurately according to data voltage Vdata.
And, can reduce the number of transistors that constitutes pixel circuit 20, and, can compensate and make cause scattered.Thereby pixel circuit 20 can provide except the brightness grade that can control organic EL 21 accurately, can also improve the OLED display 10 of yield rate and aperture rate.
Again, the transistor that preferably constitutes pixel circuit 20 be by, for example, any formation in monocrystalline silicon, polysilicon, microcrystal silicon or the amorphous silicon.
(the 2nd example)
Secondly, we illustrate the 2nd example that the present invention is specialized according to Fig. 5.Again, in this example, the component parts identical with the 1st example be with identical label, and omit the detailed description to them.
Fig. 5 is the frame circuit diagram that the internal circuit of expression active matrix part 12a of OLED display 10 and data line drive circuit 14 constitutes.In this example, active matrix part 12a by the organic EL 21 with emission red light red with pixel circuit 20R, have transmitting green light organic EL 21 green with pixel circuit 20G and the indigo plant with organic EL 21 of launching blue light constitute with pixel circuit 20B.Above-mentioned each red, green and blue with the circuit of pixel circuit 20R, 20G, 20B constitute respectively with the 1st example in the circuit of the pixel circuit 20 that illustrates constitute identical.
When stating in detail, active matrix part 12a is configured homochromy pixel circuit 20R, 20G, 20B along the direction that extends of sweep trace Yn.That is, in sweep trace Yn, the red pixel circuit 20R that uses is connected with the 1st sweep trace Y1.Equally, in sweep trace Yn, the green pixel circuit 20G that uses is connected with the 2nd sweep trace Y2.
Equally, in sweep trace Yn, the blue pixel circuit 20B that uses is connected with the 3rd sweep trace Y3.And, in turn at column direction repeated configuration such each pixel circuit 20R, 20G, 20B.Again, the control corresponding with pixel circuit 20R, 20G, 20B of all kinds is connected with transistor QR, QG, QB and supply and pixel circuit 20R, 20G, 20B of all kinds corresponding driving voltage VddR, VddG, voltage supply line VLR, the VLG of VddB, VLB.
Secondly, we illustrate pixel circuit 20R, the 20G of above-mentioned such OLED display that constitutes 10, the driving method of 20B.
Make switching transistor Trs be in the sweep signal of off-state by sweep trace Y1 supply, make be configured in sweep trace Y1 extend red in the direction be in the switching transistor Trs in the pixel circuit 20R off-state during, from power source line control circuit 15, output makes the control corresponding with sweep trace Y1 be in the signal of on-state with transistor QR.Therefore, in each red the 1st capacitor C1 that comprises in pixel circuit 20R that is connected with sweep trace Y1 and the 2nd capacitor C2, keep current potential Vn (=Vdd-Vth2) as initial potential Vc1.
After this, make control be in off-state, further make switching transistor Trs be in the sweep signal of on-state by sweep trace Y1 supply with transistor QR from power source line control circuit 15 supplies.In this state, supply with data voltage Vdata by data line Xm and switching transistor Trs to pixel circuit 20 from the single line drive 23 of data line drive circuit 14.
By doing like this, initial voltage Vc1 becomes the static capacity Cb with the static capacity Ca of the 1st capacitor C1 and the 2nd capacitor C2, the value that is expressed from the next.
Vc1＝Vdd-Vth2+Ca/(Ca+Cb)·ΔVdata
And, with the grid of this Vc1 as final current potential Vc2 supply driving transistors Trd.
With final current potential Vc2 correspondingly, set the conducting state of driving transistors Trd, will supply with organic EL 21 with this conducting state corresponding driving electric current I e1.
As a result, make red organic EL 21 luminous with pixel circuit 20R.At this moment, the threshold voltage vt h2 that adjusts with transistor Tr c is in order roughly to equate with the threshold voltage vt h1 of driving transistors Trd and to set.Thereby, because can compensate the red threshold voltage vt h1 that uses each driving transistors Trd of pixel circuit 20R, so can correspondingly with data voltage Vdata control the red brightness grade of using the organic EL 21 of pixel circuit 20R accurately.
Then, be in the state of off-state making, make control be in on-state with transistor QG from power source line control circuit 15 at corresponding with the sweep trace Y2 green switching transistor Trs that comprises in pixel circuit 20G.Therefore, be connected with sweep trace Y2 each green with pixel circuit 20G the 1st capacitor C1 and the 2nd capacitor C2 in keep current potential Vn (=Vdd-Vth2) as initial potential Vc1.
After this, make control be in off-state, further make switching transistor Trs be in the sweep signal of on-state by the 2nd sweep trace Y2 supply with transistor QG from power source line control circuit 15 supplies.Echo mutually therewith, supply with data voltage Vdata by data line Xm from the single line drive 23 of data line drive circuit 14.
By doing like this, initial voltage Vc1 becomes the static capacity Cb with the static capacity Ca of the 1st capacitor C1 and the 2nd capacitor C2, the value that is expressed from the next.
Vc1＝Vdd-Vth2+Ca/(Ca+Cb)·ΔVdata
And, with the grid of this Vc1 as final current potential Vc2 supply driving transistors Trd.
With final current potential Vc2 correspondingly, set the conducting state of driving transistors Trd, will supply with organic EL 21 with this conducting state corresponding driving electric current I e1.
As a result, make green organic EL 21 luminous with pixel circuit 20G.At this moment, the threshold voltage vt h2 that adjusts with transistor Tr c is in order roughly to equate with the threshold voltage vt h1 of driving transistors Trd and to set.Thereby,, can correspondingly with data voltage Vdata control the green brightness grade of using the organic EL 21 of pixel circuit 20G accurately because can compensate each green threshold voltage vt h1 that uses the driving transistors Trd of pixel circuit 20R.
Below, also carry out same operation for the indigo plant that is provided with accordingly with sweep trace Y3 with pixel circuit 20B.
Usually, relevant its material behavior with glow color of organic EL 21 is different, need set driving voltage to every kind of glow color.In this case, the such panel designs of the 2nd example is fit to.
Again, when because along with the effluxion deterioration of organic EL etc. relevant with glow color makes driving voltage not simultaneously, by corresponding with the degree that worsens along with effluxion of organic EL, suitably set driving voltage Vdd once more, also can compensate the deterioration that takes place along with effluxion of organic EL.
Certainly, the notion of above-mentioned the 2nd example also can be applicable to organic EL electronic component and electrooptic cell in addition.
(the 3rd example)
Secondly, we are according to Fig. 6 and Fig. 7 explanation applicability as the electronic equipment of the OLED display 10 of the electro-optical device that illustrates in the 1st and the 2nd example.OLED display 10 can be applicable to all electronic equipments such as active personal computer, portable phone, digital camera.
Fig. 6 is the oblique view that expression active personal computer constitutes.In Fig. 6, personal computer 50 has body part 52 with keyboard 51 and with the display unit 53 of OLED display 10.Even if in this case, also can bring into play the effect identical with above-mentioned example with the display unit 53 of OLED display 10.As a result, can provide and have the brightness grade that to control organic EL 21 accurately and can improve yield rate and the active personal computer 50 of the OLED display 10 of aperture rate.
Fig. 7 is the oblique view that the expression portable phone constitutes.In Fig. 7, portable phone 60 has a plurality of action buttons 61, receiving mouth 62, mouth piece 63 and with the display unit 64 of OLED display 10.Even if in this case, also can bring into play the effect identical with above-mentioned example with the display unit 64 of OLED display 10.As a result, can provide and have the brightness grade that to control organic EL 21 accurately and can improve yield rate and the portable phone 60 of the OLED display 10 of aperture rate.
Again, example of the present invention is not limited to above-mentioned example, also can implement as follows.
Zero in above-mentioned example, as control circuit, uses control transistor Q.Also can change transistor Q and be arranged on the switch that switches it between electronegative potential and the noble potential.Also can use the voltage follower circuit that comprises buffer circuit or source follower circuit for the driving force that improves driving transistors Trd again.By doing like this, can be apace to the pixel circuit supplying electric current.
Zero in above-mentioned example, control is arranged on the right-hand member side of active matrix part 12 with transistor Q and voltage supply line VL, but also control can be arranged in the power control circuit 15 with transistor Q and voltage supply line VL.
Zero also can be arranged on voltage supply line VL for the identical side of active matrix part 12 and scan line drive circuit 13.
Zero also can be arranged on power control circuit 15 for the identical side of active matrix part 12 and scan line drive circuit 13.
Zero in above-mentioned example, and making driving transistors Trd, adjusting with transistor Tr c and the conductivity type controlled with transistor Q is the p type, and the conductivity type of switching transistor Trs is the n type.But also can make driving transistors Trd and adjust with transistor Tr c conductivity type is the n type, and switching transistor Trs and control are the p type with the conductivity type of transistor Q.
Perhaps, it all is identical also can making above-mentioned whole transistorized conductivity type.
Zero in above-mentioned example, we have stated the example that applies the present invention to organic EL, but certainly, also can be embodied in the unit circuit of all electrooptic cells of for example LED, the FED of driving except organic EL, liquid crystal cell, inorganic EL element, electrophoresis element, electronic emission element etc.Also can be embodied in the memory element of (particularly MRAM) such as RAM.
Claims (15)
1, a kind of electro-optical device comprises:
The multi-strip scanning line;
Many data lines;
A plurality of electrooptic cells; With
Many power leads that intersect with described many data lines;
Described a plurality of electrooptic cell comprises: the electrooptic cell and the electrooptic cell that is used for second look with described first look different that are used for first look;
Described many power leads comprise: be used for supplying with first power lead of first driving voltage and being used for supplying with to the described electrooptic cell that is used for second look second source line of second driving voltage to the described electrooptic cell that is used for first look;
Described electrooptic cell and the described electrooptic cell that is used for second look that is used for first look adjoins each other, and along a data line configuration in described many data lines.
2, a kind of electro-optical device comprises:
The multi-strip scanning line;
Many data lines;
A plurality of electrooptic cells; With
Many power leads that intersect with described many data lines;
Described a plurality of electrooptic cell comprises: the electrooptic cell and the electrooptic cell that is used for second look with described first look different that are used for first look;
Described many power leads comprise: be used for supplying with first power lead of first driving voltage and being used for supplying with to the described electrooptic cell that is used for second look second source line of second driving voltage to the described electrooptic cell that is used for first look;
The described brightness that is used for the electrooptic cell of first look is set by the data-signal of supplying with through a data line in described many data lines;
The described brightness that is used for the electrooptic cell of second look is set by the data-signal of supplying with through a described data line.
3, electro-optical device according to claim 1 and 2 is characterized in that,
Described first driving voltage is different mutually with described second driving voltage.
4, according to each described electro-optical device in the claim 1～3, it is characterized in that,
Described a plurality of electrooptic cell also comprises the electrooptic cell that is used for three look with described first look with described second look all different;
Described many power leads also comprise the 3rd power lead that is used for supplying with to the described electrooptic cell that is used for the 3rd look the 3rd driving voltage.
5, electro-optical device according to claim 2 is characterized in that,
With described corresponding first switching transistor that is provided with of electrooptic cell that is used for first look;
With the described corresponding second switch transistor that is provided with of electrooptic cell that is used for second look;
The grid of described first switching transistor is connected with a sweep trace in the described multi-strip scanning line;
The transistorized grid of described second switch is connected with another sweep trace that is different from a described sweep trace in the described multi-strip scanning line;
The source electrode of described first switching transistor or drain electrode are connected with a described data line;
Transistorized source electrode of described second switch or drain electrode are connected with a described data line.
6, electro-optical device according to claim 4 is characterized in that,
Described first look is red;
Described second look is green;
Described the 3rd look is blue.
7, according to each described electro-optical device in the claim 1～6, it is characterized in that,
Reset described first driving voltage.
8, according to each described electro-optical device in the claim 1～7, it is characterized in that,
Reset described second driving voltage.
9, according to each described electro-optical device in the claim 1～8, it is characterized in that,
Described first driving voltage according to the described deterioration that is used for the electrooptic cell of first look, is reset.
10, according to each described electro-optical device in the claim 1～9, it is characterized in that,
Described second driving voltage according to the described deterioration that is used for the electrooptic cell of second look, is reset.
11, according to each described electro-optical device in the claim 1～10, it is characterized in that,
Described a plurality of electrooptic cell is an organic EL.
12, according to each described electro-optical device in the claim 1～11, it is characterized in that,
The described electrooptic cell that is used for first look sends green light;
The described electrooptic cell that is used for second look sends red light;
13, according to each described electro-optical device in the claim 1～11, it is characterized in that,
The described electrooptic cell that is used for first look sends blue light;
The described electrooptic cell that is used for second look sends red light;
14, according to each described electro-optical device in the claim 1～11, it is characterized in that,
The described electrooptic cell that is used for first look sends blue light;
The described electrooptic cell that is used for second look sends green light;
15, a kind of electronic equipment comprises each described electro-optical device in the claim 1～14.
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| CN101989403A (en) * | 2009-08-03 | 2011-03-23 | 三星移动显示器株式会社 | Organic light emitting display and driving method thereof |
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2003
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| CN1808533A (en) | 2006-07-26 |
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Open date: 20061220 |