CN1876889A - Computer controlled electron beam deflection apparatus - Google Patents
Computer controlled electron beam deflection apparatus Download PDFInfo
- Publication number
- CN1876889A CN1876889A CN 200610028628 CN200610028628A CN1876889A CN 1876889 A CN1876889 A CN 1876889A CN 200610028628 CN200610028628 CN 200610028628 CN 200610028628 A CN200610028628 A CN 200610028628A CN 1876889 A CN1876889 A CN 1876889A
- Authority
- CN
- China
- Prior art keywords
- digital regulation
- electron beam
- regulation resistance
- computer
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 26
- 238000001914 filtration Methods 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 210000001138 tear Anatomy 0.000 description 1
Images
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
A computer-controlled electronic beam deflection equipment for the electronic beam evaporation system of optical coating is composed of a deflection coil set consisting of X-direction deflection coil and Y-direction deflection coil, a program control computer and a deflection regulator consisting of digital potentiometer. The invention can carry out full digitalization accurate adjustment on electron beam deflection movement and accurately control the evaporation time, and the whole equipment greatly improves the speed, the precision and the reliability and also greatly improves the intelligent degree.
Description
Technical field
The present invention relates to optically coated electron beam evaporation system, particularly a kind of computer-controlled electron beam deflecting apparatus that is used for optically coated electron beam evaporation system.
Background technology
Because the needs that modern plated film is produced, many instrument and equipment all develop towards intelligent direction.Accurately control the running of filming equipment in the coating process and the change of filming parameter by computer program, become pressing for of plated film production.Electron beam evaporation is a very important link in whole optics coating process, and can it provide stable target evaporation to distribute in whole coating process, will directly influence the spectrum index and the yield rate of plated film product.To be high-octane electron beam move in a circle in the uniform magnetic field that deflector coil produces the process of electron beam evaporation deposition, and deflection is incident on bombardment heating target on the target material surface for 270 °, condenses in the substrate surface film forming after making the target steam raising.The stability of electron beam evaporation and electron beam inflection point and the travel frequency on target is closely related.Stable evaporation needs ideal beam spot inflection point and rational evaporation time.The yaw motion and the magnetic field of electron beam are closely related, and when the magnetic field size changed, the radius-of-curvature of electron beam circumferential motion changed, and the position that beam spot is incident on target material surface also can change.Be that the beam deflection motion realizes by changing deflector coil magnetic field size.The magnetic field size is voltage-controlled by the deflector coil two ends.Conditional electronic beam steering operating device is by mechanical potentiometer, as the manual rotary resistor, changes the voltage swing of X, Y direction deflector coil.Yet because the easy mechanical wear of mechanical potentiometer, the direct control of operator easily causes error and period to be forbidden, and can't satisfy requirement accurate, the stable regulation beam deflection, and the time that more can't reach is gone up the accurately requirement of control.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of computer-controlled electron beam deflecting apparatus is provided, it can move the accurate adjusting of carrying out total digitalization and accurately control evaporation time beam deflection, entire equipment improves on speed, precision and reliability greatly, and intelligent degree also improves greatly.
Technical solution of the present invention is as follows:
A kind of computer-controlled electron beam deflecting apparatus, comprise that one has the deflector coil group of directions X deflector coil and Y direction deflector coil composition, be characterized in also having a sequential control counter and a deflection setting device that constitutes by digital regulation resistance, described digital regulation resistance is accepted the numerary signal of described sequential control counter, regulate direct impedance, the voltage of regulating is loaded on the deflector coil group, and electron beam is produced deflecting action.
Described deflection setting device is successively by voltage regulator circuit, power amplification circuit, filtering circuit constitutes, described voltage regulator circuit contains first digital regulation resistance and second digital regulation resistance that is connected with described control computer parallel port, this first digital regulation resistance and second digital regulation resistance are accepted the numerary signal of described sequential control counter, regulate direct impedance, described first digital regulation resistance connects described directions X deflector coil by first power amplification circuit and first filtering circuit, and described second digital regulation resistance connects described Y direction deflector coil by second power amplification circuit and second filtering circuit.
Characteristics of the present invention are to adopt digital regulation resistance to replace traditional mechanical type potentiometer, and carry out time variable control with computer.
Described voltage regulator circuit is to form with two energy and the three-way Nonvolatile digital potentiometer of computer interface, the change in resistance of three-way Nonvolatile digital potentiometer is that ladder, increment type change, it can accept numerary signal, regulate direct impedance, control X, Y direction yoke voltage size respectively.Digital regulation resistance replaces traditional mechanical type potentiometer can reduce the sum of errors adjusting period.The parallel port of the input termination computer of voltage regulator circuit, output terminal and power amplification circuit join.The voltage of regulating is through being loaded on the deflector coil electron beam generation deflecting action by filtering circuit after the power magnification.
Computer-controlled electron beam deflecting apparatus provided by the present invention not only can make the adjusting work in the plated film production realize automatization easily, and also realizes intelligent on manipulating easily.
Advantage of the present invention is:
1, deflection control equipment can realize that total digitalization regulates to yoke voltage size, but numeral prolonged preservation and refreshing at any time.
2, the stepped change in resistance of digital regulation resistance makes this device have sharpness of regulation height and resistance stable properties, and the step that its resistance is differentiated is many more, and change in resistance is meticulous more, and the sensitivity of adjustment is high more.
3, this equipment accurately deflection of controlling electron beam in time.
4 and computer interface, be easy to realize operation control automatically by software programming.
5, this equipment has anti-vibration, does not have the characteristics that machinery weares and teares, the life-span is long.
Description of drawings
Fig. 1 is the overall structure synoptic diagram of the embodiment of computer control electron beam deflecting apparatus of the present invention.
Fig. 2 is that computer increases or reduce, store the schema of resistance by parallel port control figure potentiometer resistance.
Fig. 3 is the schema that software control deflection setting device is exported different deflecting voltages and corresponding time of lag thereof.
Embodiment
The invention will be further described below in conjunction with embodiment, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the overall structure synoptic diagram of the embodiment of computer control electron beam deflecting apparatus of the present invention.As seen from the figure, the computer-controlled electron beam deflecting apparatus of the present invention comprises the mu balanced circuit 4 and 5 of 3, two output ± 10V voltages of 2, one deflector coil groups of 1, one deflection setting device of a computer.Deflection setting device 2 mainly comprises voltage regulator circuit 21, first power amplification circuit 22 and second power amplification circuit 23, first filtering circuit 24 and second filtering circuit 25.Voltage regulator circuit 21 joins with computer 1 parallel port.Totally 8 of the FPDPs of computer 1 parallel port, totally 4 in 2~No. 9 mouths, control port, 1,14,16, No. 17 mouths.Two-port can be formed 1~12 Any Digit output port altogether, and when computer 1 during to the port register one writing of data or control, corresponding data line or control line output+5V voltage are write " 0 " and then is output as 0V voltage.The characteristics of parallel port are for transmission is fast, reliability is high, programming is simple, the sequential control requirement of the digital regulation resistance that is content with very little.Voltage regulator circuit 2 comprises three voltage conversion circuits 213,214,215.Wherein 213 and 214 handle+10V voltage transitions are+5V, and 215 handle-10V voltage transitions are-5V.First digital regulation resistance 211 and second digital regulation resistance 212 are controlled the X/Y yoke voltage respectively.First digital regulation resistance 211 and second digital regulation resistance 212 adopt X9319 and X9C103 Nonvolatile digital potentiometer respectively in the present embodiment.Non-volatile potentiometer is formed by three parts: control section, nonvolatile memory and electric resistance array.X9319 and X9C103 total resistance value are 10K Ω, there are 99 resistance unit arrays inside, between each resistance unit and arbitrary end the tap that can be visited by sliding end Rw is all arranged, utilize moving up and down of sliding end Rw, the resistance value size that can increase or reduce to export.100 sliding taps, the digitizing that can reach 100 grades is regulated, corresponding to 100 different resistance values.The effect of control section such as same lifting/lowering counter, the output of this counter pass through the electronic switch that a S.C. is connected in the decoding back, so that a point on the electric resistance array is connected to slip output terminal Rw, thereby change the size of exporting resistance.Control section is mainly added/down control end, the three-way control of INC metering pulse end by CS sheet choosing end, U/ D, INC holds the triggering of pulse negative edge each time will hold according to U/ D add/subtract 1 for high/low level makes the counter in the digital regulation resistance, send metering pulse just can make to the INC end continuously and add/subtract the numerical value that counting reaches needs.The position of sliding end Rw can be stored in the EEPROM holder, powers in next time and can be called again when using.CS, U/ D, INC three ends join with parallel port FPDP or control port respectively, can with 1~9,14,16 of parallel port, No. 17 mouths are connected.Present embodiment has two digital regulation resistances, its INC, CS, the three-way mouth that connects respectively 2~4 and 6~No. 8 of U/ D.High-end R
HWith low side R
LBe equivalent to an inboardend of mechanical potentiometer.The first digital regulation resistance 211X9319 end-point voltage is that 0V arrives+10V, its R
LEnd ground connection, R
HEnd joins the yoke voltage of may command Y direction by an about 20K Ω current-limiting resistance 216 with 10V voltage.According to beam spot directions X move required yoke voltage from negative to positive characteristics, chosen the second digital regulation resistance X9C103212 of end-point voltage, its R for ± 5V
HAnd R
LTwo ends connect an about 20K Ω current-limiting resistance 217 and 218 respectively.Computer programming control inserts the CS of parallel port, the Transistor-Transistor Logic level of U/ D, INC changes, and satisfying the certain time sequence relation can be in the different resistance value of Rw end output.Fig. 2 provides computer programming and increases or reduce, store the schema of resistance by parallel port control figure potentiometer resistance.As shown in Figure 2, to selected digital regulation resistance chip selection cs end input low level, judge resistance value whether to increase and to corresponding high level of U/ D end input or lower level, with the current stop place of digital regulation resistance sliding end Rw is benchmark, put the metering pulse of some amount to counter, the metering pulse number is the step number that sliding end need increase or reduce according to benchmark, adjust INC end high-low level, INC holds the triggering of pulse negative edge each time will hold according to U/ D add/subtract 1 for high/low level makes the counter in the digital regulation resistance, reach the purpose in Rw end output different resistance values.Can utilize and put INC end earlier and be high level, time-delay is put the CS end again and be the time program process of high level, can realize that the position of sliding end Rw is stored in the EEPROM holder, will be called again when power on use next time.
Change the resistance value size, can reach the purpose of regulating the output voltage size, make electron beam deflect into different positions at X or Y direction; Store arbitrary resistance value, so that the predetermined magnitude of voltage of output when using next time makes beam deflection to preposition; The computer programming accurate delay changes resistance value, exports different voltages, so that electron beam is in the resident different time of different inflection points, time precision can reach the ms magnitude.Fig. 3 is controlling electron beam deflection stops different time at the different positions of X or Y direction a schema.Voltage and different residence times that different positions is corresponding different.The digital regulation resistance of at first selected control X or Y direction yoke voltage, putting potentiometer change number of times is the position number of beam spot in X or the deflection of Y direction, put the metering pulse number of different positions correspondence to counter, the resistance output of digital regulation resistance, regulating voltage is carried on the deflector coil, behind the accurate delay, repeat above-mentioned steps and can realize beam spot moving arbitrarily and the accurate control of beam spot in X or Y direction to the rational evaporation time of target.
Behind the signal access power amplifying circuit and filtering circuit of voltage regulator circuit output, the control voltage of output is loaded into the different the action of a magnetic field of generation on the deflector coil group 3 on electron beam, electron beam is deflected and stops.Power amplification circuit adopts class AB dual power supply complementary symmetry circuit, and filtering circuit adopts the capacitance resistance series circuit in parallel with deflector coil.
The entire operation process realizes Digital Control, and is simple accurately intelligent.
Claims (3)
1, a kind of computer-controlled electron beam deflecting apparatus, comprise that one has the deflector coil group (3) of directions X deflector coil and Y direction deflector coil composition, it is characterized in that also having a sequential control counter (1) and a deflection setting device (2) that constitutes by digital regulation resistance, described digital regulation resistance is accepted the numerary signal of described sequential control counter (1), regulate direct impedance, the voltage of regulating is loaded on the described deflector coil group (3), and electron beam is produced deflecting action.
2, computer-controlled electron beam deflecting apparatus according to claim 1, it is characterized in that described deflection setting device (2) is successively by voltage regulator circuit (21), power amplification circuit, filtering circuit constitutes, described voltage regulator circuit (21) contains first digital regulation resistance (211) and second digital regulation resistance (212) that is connected with described control computer (1) parallel port, this first digital regulation resistance (211) and second digital regulation resistance (212) are accepted the numerary signal of described sequential control counter (1), regulate direct impedance, described first digital regulation resistance (211) connects described directions X deflector coil by first power amplification circuit (22) and first filtering circuit (24), and described second digital regulation resistance (212) connects described Y direction deflector coil by second power amplification circuit (23) and second filtering circuit (25).
3, computer-controlled electron beam deflecting apparatus according to claim 1 and 2 is characterized in that described digital regulation resistance is three-way Nonvolatile digital potentiometer, and the change in resistance of three-way Nonvolatile digital potentiometer is ladder, increment type.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610028628 CN1876889A (en) | 2006-07-05 | 2006-07-05 | Computer controlled electron beam deflection apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610028628 CN1876889A (en) | 2006-07-05 | 2006-07-05 | Computer controlled electron beam deflection apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1876889A true CN1876889A (en) | 2006-12-13 |
Family
ID=37509440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200610028628 Pending CN1876889A (en) | 2006-07-05 | 2006-07-05 | Computer controlled electron beam deflection apparatus |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1876889A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101966620A (en) * | 2010-08-27 | 2011-02-09 | 南京理工大学 | High-speed yaw scanning control device for testing quality of electron beam current |
CN105483623A (en) * | 2015-12-18 | 2016-04-13 | 中国航空工业集团公司北京航空制造工程研究所 | EB-PVD (Electron Beam-Physical Vapor Deposition) device and workpiece coating preparation method |
-
2006
- 2006-07-05 CN CN 200610028628 patent/CN1876889A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101966620A (en) * | 2010-08-27 | 2011-02-09 | 南京理工大学 | High-speed yaw scanning control device for testing quality of electron beam current |
CN101966620B (en) * | 2010-08-27 | 2012-09-05 | 南京理工大学 | High-speed yaw scanning control device for testing quality of electron beam current |
CN105483623A (en) * | 2015-12-18 | 2016-04-13 | 中国航空工业集团公司北京航空制造工程研究所 | EB-PVD (Electron Beam-Physical Vapor Deposition) device and workpiece coating preparation method |
CN105483623B (en) * | 2015-12-18 | 2017-10-27 | 中国航空工业集团公司北京航空制造工程研究所 | A kind of electro beam physics vapour deposition device and workpiece coating production |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69931494T2 (en) | UNIVERSAL MEMORY ELEMENT AND PROGRAMMING METHOD | |
Wu et al. | A multi-level memristor based on Al-doped HfO 2 thin film | |
DE60037301T2 (en) | UNIVERSAL STORAGE ELEMENT AND SYSTEMS WITH SUCH ELEMENT, AND ARRANGEMENT AND METHOD FOR READING. WRITE AND PROGRAM THE ELEMENT. | |
Krishnaprasad et al. | MoS2 synapses with ultra-low variability and their implementation in Boolean logic | |
KR100962221B1 (en) | Switching device | |
CN101802921B (en) | Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus | |
DE102011083180A1 (en) | Readout distribution management for phase change memory | |
Khan et al. | Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2-based resistive switching memory for neuromorphic applications | |
CN110797062B (en) | Memristor read-write circuit and method | |
CN1876889A (en) | Computer controlled electron beam deflection apparatus | |
Kim et al. | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation | |
CN2931494Y (en) | Computer controlled electron beam deflection apparatus | |
CN105119594A (en) | High-speed serial port load automatic calibration circuit | |
CN104240757B (en) | A kind of multivalue operating method of RRAM memory cell | |
Tian et al. | The design and simulation of a titanium oxide memristor-based programmable analog filter in a simulation program with integrated circuit emphasis | |
DE102012209151A1 (en) | Set pulse for phase transition memory programming | |
CN104778963B (en) | RRAM sensitive amplifier | |
CN110460316A (en) | Controllable gain amplifier | |
CN101369815A (en) | Method for automatically regulating reference voltage and improving analog-to-digital conversion definition | |
CN1744340A (en) | Silicon-contained series surfur-family compound phase transformation film material for phase transformation memory | |
CN100585728C (en) | Word line voltage compensation method for write current in phase change memory array | |
CN110007249A (en) | A kind of LED light driving power test method, apparatus and system | |
CN104810049A (en) | Pulse width amplitude self-adaptive resistive random access memory writing drive circuit | |
Huang et al. | Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag: ZnO/Pt memristor | |
CN2821635Y (en) | Multiple gear reference voltage source based on digital potentiometer and yarn fault judging circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |