CN1876600A - Bismuth zinc niobate / barium strontium titanate composite dielectric adjustable thick film preparation method - Google Patents
Bismuth zinc niobate / barium strontium titanate composite dielectric adjustable thick film preparation method Download PDFInfo
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- CN1876600A CN1876600A CN 200610043028 CN200610043028A CN1876600A CN 1876600 A CN1876600 A CN 1876600A CN 200610043028 CN200610043028 CN 200610043028 CN 200610043028 A CN200610043028 A CN 200610043028A CN 1876600 A CN1876600 A CN 1876600A
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- bismuth zinc
- barium
- strontium titanate
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Abstract
The invention relates the preparing method of bismuth zinc niobium- barium strontium titanate, comprising the following steps: adding bismuth zinc niobium nanometer powder into barium strontium titanate solation, then adopting rotary coating technology to deposit on the base material, and making the bismuth zinc niobium nanometer powder disperse in the barium strontium titanate film dielectric. The invention chooses two kinds of microwave adjustable dielectric film which have different structures and action mechanisms to make film material possessing compound structures, the invention uses the good temperature stability, dielectric constant and low deterioration of bismuth zinc niobium film to compensate for high dielectric constant and dielectric loss of barium strontium titanate, and uses dielectric adjustable property of barium strontium titanate at low field density to compensate for the shortage of high-field intensity of bismuth zinc niobium material, improving character factor of material, reducing electric field intensity and getting new pattern practical coextruded film material.
Description
Technical field
The present invention relates to the preparation method of the medium thick film in a kind of inorganic materials, particularly a kind of preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film.
Background technology
Along with modern communication technology, the particularly development of mobile communication technology, requirement to microwave device and system's miniaturization is urgent day by day, and the dielectric materials with tunable characteristic can be used for preparing and comprise adjustable microwave devices such as phase shifter, co-planar waveguide and adjustable filter.
Because surperficial power component and performance need, the demand with medium thick film material of adjustable microwave characteristic increases gradually, and the research work to adjustable dielectric materials at present concentrates on the strontium-barium titanate (Ba with perovskite structure mostly
0.5Sr
0.5TiO
3) and the bismuth zinc niobium (Bi of cube pyrochlore structure
1.5ZnNb
1.5O
7) on the material.Barium strontium titanate film material has high specific inductivity and big dielectric tunable characteristic, but, (tan δ) is higher for its dielectric loss, cause its electrical qualities factor Q (=1/tan δ) lower, comparatively Chang Yong method remains the barium strontium titanate (BST) thick film that adopts doping magnesium oxide (MgO), can well reduce the dielectric loss of strontium-barium titanate, but all corresponding reduction of the tunable characteristic of material and quality factor, thermal treatment temp raises, and its high frequency temperature stability remains a key issue that needs solution.Bismuth zinc niobium material is a kind of medium dielectric constant material, has good high frequency temperature stability and microwave dielectric property, has low-down dielectric loss, finds again that in recent years it has tunable characteristic.Moderate relatively specific inductivity, good micro-wave dielectric tunable characteristic and temperature stability make the application of bismuth zinc niobium in microwave dielectric material more and more widely.
Below be the reference related to the present invention that the applicant retrieves:
1、Wei?Ren，Susan?Trolier-McKinstry，Clive?A.Randall，and?Thomas?R.Shrout：“Bismuth?zinc?niobate?pyrochlore?thin?films?for?capacitive?applications”，J.Appl.Phys.，89，767-774(2001)；
2、Thomas?R.Shrout，Susan?Trolier-McKinstry，Clive?A.Randall，Wei?Ren，Ryan?Thayer?and?Nathanael?Bennink：“Pyrochlore?thin?films?and?process?formaking”，U.S.Patent，Patent?No.US?6,482,527?B1.(2002)；
3、L.Yan，L.B.Kong，L.F.Chen，K.B.Chong，C.Y.Tan?and?C.K.Ong，Ba
0.5Sr
0.5TiO
3-Bi
1.5Zn
1.0Nb
1.5O
7?composite?thin?films?with?promisingmicrowave?dielectric?properties?for?microwave?device?applications，AppliedPhysics?Letters，85，3522-3524(2004)；
4、Xiaofeng?Liang，Zhongyan?Meng?and?Wenbiao?Wu，Effect?of?Acceptorand?Donor?Dopants?on?the?Dielectric?and?Tunable?Properties?of?BariumStrontium?Titanate，J.Am.Ceram.Soc.，87，2218-2222(2004)；
5、Gun?Bhakdisongkhram，Youji?Yamashita，Takashi?Nishida?and?TadashiShiosaki，Dependence?of?Microwave?Properties?of?Ba
xSr
1-xTiO
3?Thin?Films?onSubstrate，Japanese?Journal?of?Applied?Physics，44，7098-7102(2005)；
6、Zhihong?Wang，Weiguang?Zhu，Changlei?Zhao，Ooi?Kiang?Tan，DensePZT?thick?films?derived?from?sol-gel?based?nanocomposite?process，MaterialsScience?and?Engineering?B99(2003)56-62
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film, the thick film that makes according to preparation method of the present invention can effectively reduce the sintering temperature of thick film, improves the micro-wave dielectric tunable characteristic and the figure of merit of thick film.
The technical solution used in the present invention is in order to achieve the above object: bismuth zinc niobium nano-powder is added blend in the strontium-barium titanate colloidal sol elder generation body, adopt spin coating proceeding to be deposited on the base material again, bismuth zinc niobium nano-powder uniform particles is scattered in the successive barium strontium titanate medium.
Step of the present invention is as follows:
A, be raw material with strontium acetate, barium acetate and tetrabutyl titanate, Glacial acetic acid is a solvent, and methyl ethyl diketone is a chelate stabilizer, and adopting the sol-gel technology process is Ba according to chemical constitution
0.5Sr
0.5TiO
3Preparation concentration is the strontium-barium titanate elder generation liquid solution of 0.4-0.8mol/L;
B, be raw material with Niobium Pentxoxide, bismuth oxide and zinc oxide, obtaining chemical constitution according to traditional ceramics technology is Bi
1.5ZnNb
1.5O
7Bismuth zinc niobium powder with cube pyrochlore structure obtains particle diameter less than 1 micron bismuth zinc niobium nano-powder through fragmentation again;
In c, the bismuth zinc niobium nano-powder adding strontium-barium titanate colloidal sol elder generation liquid solution with acquisition, add polyvinyl pyrrolidone simultaneously as chelated dispersants, then by high-energy ball milling grind altogether make it homodisperse after, obtain stable mixed slurry elder generation body through ultra-sonic dispersion again;
D, employing spin coating proceeding, under 3000 rev/mins, carried out 25 seconds, the stable mixed slurry elder generation body of step c gained is deposited on the base material of polishing, one deck finally got final product 600～900 ℃ of anneal until reaching the thickness that needs in 30 minutes to continue to deposit down after 600 ℃ of drying treatment.
Wherein step a is to be Ba according to chemical constitution
0.5Sr
0.5TiO
3The barium acetate and the strontium acetate that satisfy stoichiometric ratio are dissolved in the Glacial acetic acid, fully stirred 30 minutes at 80 ℃, tetrabutyl titanate and methyl ethyl diketone are joined in the mixing solutions of barium acetate after evenly by 2: 1 mixed in molar ratio, and at room temperature stirred 30 minutes, finally obtain the first body of clarifying strontium-barium titanate colloidal sol; Wherein step b handles at 850-950 ℃ according to traditional ceramics technology that to obtain chemical constitution in 3 hours be Bi
1.5ZnNb
1.5O
7Have the bismuth zinc niobium powder of cube pyrochlore structure, and do not have second to occur mutually, again through the broken particle diameter that obtains of general milling and two steps of high-energy ball milling less than 1 micron bismuth zinc niobium nano-powder; Wherein the common mill among the step c carries out in high-energy ball milling; Wherein thick film preparation must be got rid of film through even glue repeatedly, must remove organism through 600 ℃ of drying treatment after getting rid of film for the first time, and then continue to get rid of down one deck; Wherein in steps d, get rid of film, must remove organism through 600 ℃ of drying treatment after each layer deposition finished, and then continue to get rid of down one deck through repeatedly sparing glue; The mass content of bismuth zinc niobium nano-powder is 60-85% in the said mixed slurry; The mass content of polyvinyl pyrrolidone is 0.5% in the said mixed slurry.
The present invention selects the microwave tunable medium material of the two kinds of different structures and the mechanism of action for use, design and preparation have the thick-film material of composite structure, utilize the dielectric tunable characteristic of bismuth zinc niobium principal phase, good temperature stability, medium dielectric constant microwave medium and low loss characteristic remedy the high-k of barium strontium titanate and high dielectric loss, utilize barium strontium titanate remedying the strong higher deficiency of bismuth zinc niobium material coercive field than the dielectric tunable characteristic that promptly exists under the low field intensity simultaneously, when not reducing the thick-film material tunable characteristic, improve the quality factor of material, reduce its applied electric field intensity, on several different base materials, obtain novel, microwave adjustable thick film material that can be practical.
The composite thick film that the present invention prepares determines to have following character through X-ray diffraction (XRD), particle-size analyzer, scanning electronic microscope (SEM), surface profiler, electric impedance analyzer test and analysis:
1, Zhi Bei thick film is after 600～900 ℃ of anneal, and phase structure is rendered as the composite structure of the bismuth zinc niobium of the strontium-barium titanate of cubic perovskite structure and cube pyrochlore structure, and crystallization is complete separately to show BZN and BST component;
2, the thickness of rete is 1～10 μ m, the surfacing flawless;
3, the specific inductivity of thick film is between 50 to 400, and dielectric loss is less than 5%, and coercive field is by force 100～500kV/cm.
Embodiment
Embodiment 1:
1, be Ba at first according to chemical constitution
0.5Sr
0.5TiO
3The barium acetate and the strontium acetate that satisfy stoichiometric ratio are dissolved in the Glacial acetic acid, fully stirred 30 minutes at 80 ℃, tetrabutyl titanate and methyl ethyl diketone are joined in the mixing solutions of barium acetate after evenly by 2: 1 mixed in molar ratio, and at room temperature stirred 30 minutes, finally obtain the first body of clarifying strontium-barium titanate colloidal sol;
2, handling 3 hours acquisition chemical constitutions according to traditional ceramics technology at 850 ℃ then is Bi
1.5ZnNb
1.5O
7Have the bismuth zinc niobium powder of cube pyrochlore structure, and do not have second to occur mutually, again through the broken particle diameter that obtains of general milling and two steps of high-energy ball milling less than 1 micron bismuth zinc niobium nano-powder;
3, choosing bismuth zinc niobium nano-powder and concentration is that the strontium-barium titanate elder generation liquid solution of 0.4mol/L mixes, wherein the mass content of bismuth zinc niobium powder is 60%, the polyvinylpyrrolidone of adding 0.5% is a stablizer, grinds altogether in high-energy ball milling 4 hours, makes it fully to be uniformly dispersed;
4, adopting spin coating proceeding, is to carry out under 3000 rev/mins 25 seconds at rotating speed, and the first body of the stable mixed slurry of gained is deposited on plating Pt silicon base (Pt/Ti/SiO
2/ Si) on, in rapid heat-treatment furnace,, repeats to reach for 3 times the thickness of needs through continuing one deck under the deposition after 600 ℃ of drying treatment, finally obtained the multilayer thick film material in 30 minutes through 600 ℃ of anneal.
The gained thickness of thick film is 4 μ m, the surfacing flawless.Phase structure is rendered as the composite structure of the bismuth zinc niobium of the strontium-barium titanate of cubic perovskite structure and cube pyrochlore structure, and wherein the diffraction peak of bismuth zinc niobium is higher by force.
The specific inductivity of thick film is between 70-80, and dielectric loss is 4%, and coercive field is by force 400kV/cm.
Embodiment 2:
1, be Ba at first according to chemical constitution
0.5Sr
0.5TiO
3The barium acetate and the strontium acetate that satisfy stoichiometric ratio are dissolved in the Glacial acetic acid, fully stirred 30 minutes at 80 ℃, tetrabutyl titanate and methyl ethyl diketone are joined in the mixing solutions of barium acetate after evenly by 2: 1 mixed in molar ratio, and at room temperature stirred 30 minutes, finally obtain the first body of clarifying strontium-barium titanate colloidal sol;
2, handling 3 hours acquisition chemical constitutions according to traditional ceramics technology at 950 ℃ then is Bi
1.5ZnNb
1.5O
7Have the bismuth zinc niobium powder of cube pyrochlore structure, and do not have second to occur mutually, again through the broken particle diameter that obtains of general milling and two steps of high-energy ball milling less than 1 micron bismuth zinc niobium nano-powder;
3, choosing bismuth zinc niobium nano-powder and concentration is that the strontium-barium titanate elder generation liquid solution of 0.6mol/L mixes, wherein the content of bismuth zinc niobium powder is 85%, the polyvinylpyrrolidone of adding 0.5% is a stablizer, grinds altogether in high-energy ball milling 4 hours, makes it fully to be uniformly dispersed;
4, adopting spin coating proceeding, is to carry out under 3000 rev/mins 25 seconds at rotating speed, and the first body of the stable mixed slurry of gained is deposited on plating Pt silicon base (Pt/Ti/SiO
2/ Si) on, in rapid heat-treatment furnace,, repeats to reach for 4 times the thickness of needs through continuing one deck under the deposition after 600 ℃ of drying treatment, finally obtained the multilayer thick film material in 30 minutes through 900 ℃ of anneal.
Present embodiment gained thickness of thick film is 5.5 μ m, the surfacing flawless.Phase structure is rendered as the composite structure of the bismuth zinc niobium of the strontium-barium titanate of cubic perovskite structure and cube pyrochlore structure, and wherein the diffraction peak of bismuth zinc niobium is higher by force.
The specific inductivity of thick film is between 70-80, and dielectric loss is 3%, and coercive field is by force 450kV/cm.
Embodiment 3:
1, be Ba at first according to chemical constitution
0.5Sr
0.5TiO
3The barium acetate and the strontium acetate that satisfy stoichiometric ratio are dissolved in the Glacial acetic acid, fully stirred 30 minutes at 80 ℃, tetrabutyl titanate and methyl ethyl diketone are joined in the mixing solutions of barium acetate after evenly by 2: 1 mixed in molar ratio, and at room temperature stirred 30 minutes, finally obtain the first body of clarifying strontium-barium titanate colloidal sol;
2, handling 3 hours acquisition chemical constitutions according to traditional ceramics technology at 900 ℃ then is Bi
1.5ZnNb
1.5O
7Have the bismuth zinc niobium powder of cube pyrochlore structure, and do not have second to occur mutually, again through the broken particle diameter that obtains of general milling and two steps of high-energy ball milling less than 1 micron bismuth zinc niobium nano-powder;
3, choosing bismuth zinc niobium nano-powder and concentration is that the strontium-barium titanate elder generation liquid solution of 0.8mol/L mixes, wherein the content of bismuth zinc niobium powder is 75%, the polyvinylpyrrolidone of adding 0.5% is a stablizer, grinds altogether in high-energy ball milling 4 hours, makes it fully to be uniformly dispersed;
4, adopt spin coating proceeding, at rotating speed is to carry out under 3000 rev/mins 25 seconds, the stable mixed slurry elder generation body of gained is deposited on the silver plated alumina substrate (wherein silver electrode is that 850 ℃ of high temperature silver slurry sintering form), in rapid heat-treatment furnace through continuing one deck under the deposition after 600 ℃ of drying treatment, repeat 4 times and reach the thickness that needs, finally obtained the multilayer thick film material in 30 minutes through 850 ℃ of anneal.
Present embodiment gained thickness of thick film is 6 μ m, the comparatively smooth flawless in surface.Phase structure is rendered as the composite structure of the bismuth zinc niobium of the strontium-barium titanate of cubic perovskite structure and cube pyrochlore structure, and wherein the diffraction peak of bismuth zinc niobium is higher by force.
The specific inductivity of thick film is 125, and dielectric loss is 4%, and coercive field is by force 300kV/cm.
Claims (9)
1, a kind of preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film, it is characterized in that: bismuth zinc niobium nano-powder is added blend in the strontium-barium titanate colloidal sol elder generation body, adopt spin coating proceeding to be deposited on the base material again, bismuth zinc niobium nano-powder uniform particles is scattered in the successive barium strontium titanate medium.
2, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 1 is characterized in that, specifically comprises the steps:
A, be raw material with strontium acetate, barium acetate and tetrabutyl titanate, Glacial acetic acid is a solvent, and methyl ethyl diketone is a chelate stabilizer, and adopting the sol-gel technology process is Ba according to chemical constitution
0.5Sr
0.5TiO
3Preparation concentration is the strontium-barium titanate elder generation liquid solution of 0.4-0.8mol/L;
B, be raw material with Niobium Pentxoxide, bismuth oxide and zinc oxide, obtaining chemical constitution according to traditional ceramics technology is Bi
1.5ZnNb
1.5O
7Bismuth zinc niobium powder with cube pyrochlore structure obtains particle diameter less than 1 micron bismuth zinc niobium nano-powder through fragmentation again;
In c, the bismuth zinc niobium nano-powder adding strontium-barium titanate colloidal sol elder generation liquid solution with acquisition, add polyvinyl pyrrolidone simultaneously as chelated dispersants, then by high-energy ball milling grind altogether make it homodisperse after, obtain stable mixed slurry elder generation body through ultra-sonic dispersion again;
D, employing spin coating proceeding, under 3000 rev/mins, carried out 25 seconds, the stable mixed slurry elder generation body of step c gained is deposited on the base material of polishing, one deck finally got final product 600～900 ℃ of anneal until reaching the thickness that needs in 30 minutes to continue to deposit down after 600 ℃ of drying treatment.
3, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2 is characterized in that: wherein step a is to be Ba according to chemical constitution
0.5Sr
0.5TiO
3The barium acetate and the strontium acetate that satisfy stoichiometric ratio are dissolved in the Glacial acetic acid, fully stirred 30 minutes at 80 ℃, tetrabutyl titanate and methyl ethyl diketone are joined in the mixing solutions of barium acetate after evenly by 2: 1 mixed in molar ratio, and at room temperature stirred 30 minutes, finally obtain the first body of clarifying strontium-barium titanate colloidal sol.
4, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2 is characterized in that: wherein step b handles at 850-950 ℃ according to traditional ceramics technology that to obtain chemical constitution in 3 hours be Bi
1.5ZnNb
1.5O
7Have the bismuth zinc niobium powder of cube pyrochlore structure, and do not have second to occur mutually, again through the broken particle diameter that obtains of general milling and two steps of high-energy ball milling less than 1 micron bismuth zinc niobium nano-powder.
5, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2 is characterized in that: wherein the common mill among the step c carries out in high-energy ball milling.
6, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2, it is characterized in that: wherein the thick film preparation must be got rid of film through repeatedly sparing glue, must remove organism through 600 ℃ of drying treatment after for the first time getting rid of film, and then continue to get rid of down one deck.
7, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2, it is characterized in that: wherein in steps d, get rid of film through repeatedly sparing glue, must remove organism through 600 ℃ of drying treatment after each layer deposition finished, and then continue to get rid of down one deck.
8, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2 is characterized in that: the mass content of bismuth zinc niobium nano-powder is 60-85% in the said mixed slurry.
9, the preparation method of bismuth zinc niobate/barium strontium titanate composite dielectric adjustable thick film as claimed in claim 2 is characterized in that: the mass content of polyvinyl pyrrolidone is 0.5% in the said mixed slurry.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102199717A (en) * | 2011-04-15 | 2011-09-28 | 北京理工大学 | Gradient multiferroic material and preparation method thereof |
| CN104311010A (en) * | 2014-10-09 | 2015-01-28 | 天津大学 | Low-consumption temperature stable type high-frequency ceramic capacitor medium and preparation method thereof |
| CN115447251A (en) * | 2022-09-15 | 2022-12-09 | 佛山(华南)新材料研究院 | Preparation method of PTFE (polytetrafluoroethylene) -based high-frequency material with high dielectric constant |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| MY104019A (en) * | 1988-05-27 | 1993-10-30 | Mitsui Chemicals Inc | Ferroelectric ceramic material. |
| CN1101358C (en) * | 1999-06-14 | 2003-02-12 | 西安交通大学 | Low-temp sintered high-performance and-frequency dielectric ceramic |
| CN1532166A (en) * | 2003-03-21 | 2004-09-29 | 广东风华高新科技集团有限公司 | Method for producing high dielectric constant ceramic powder and ceramic capacitor |
| CN1241874C (en) * | 2003-11-07 | 2006-02-15 | 四川大学 | Multi-component system nonleaded piezoelectric ceramic with good performance |
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2006
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102199717A (en) * | 2011-04-15 | 2011-09-28 | 北京理工大学 | Gradient multiferroic material and preparation method thereof |
| CN102199717B (en) * | 2011-04-15 | 2012-12-19 | 北京理工大学 | Gradient multiferroic material and preparation method thereof |
| CN104311010A (en) * | 2014-10-09 | 2015-01-28 | 天津大学 | Low-consumption temperature stable type high-frequency ceramic capacitor medium and preparation method thereof |
| CN104311010B (en) * | 2014-10-09 | 2016-04-20 | 天津大学 | A kind of low-loss temperature-stabilized radio ceramics condenser dielectric and preparation method thereof |
| CN115447251A (en) * | 2022-09-15 | 2022-12-09 | 佛山(华南)新材料研究院 | Preparation method of PTFE (polytetrafluoroethylene) -based high-frequency material with high dielectric constant |
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