CN1874021A - Structure of LED, and fabricating method - Google Patents
Structure of LED, and fabricating method Download PDFInfo
- Publication number
- CN1874021A CN1874021A CNA2006100928646A CN200610092864A CN1874021A CN 1874021 A CN1874021 A CN 1874021A CN A2006100928646 A CNA2006100928646 A CN A2006100928646A CN 200610092864 A CN200610092864 A CN 200610092864A CN 1874021 A CN1874021 A CN 1874021A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- substrate
- algainp
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The structure of LED includes following parts: permanent baseplate possessing first surface; being located on the first surface, the metal layer is divided to first region and second region, and the first region is as first electrode; crystal grain is located at second region of the metal layer. The crystal grain includes at least stacked second electrode and luminous region. Through junction technique of crystal grain, the crystal grain is jointed to the second region of the metal layer so as to form electrical connection between metal layer and luminous region. Overcoming issue of light absorbed by base plate, the invention raises luminous efficiency greatly. Processing technique in low temperature for fusing chip and base plate does not deteriorate chip. Features are: high qualification rate of products, easy of heat elimination. The disclosed structure is suitable to application of LED in high power.
Description
Technical field
The present invention relates to light-emitting diode structure and manufacture method thereof, and be particularly related to a kind of crystal grain maqting type (Chip Bonding) light-emitting diode structure and manufacture method thereof.
Background technology
Please refer to Fig. 1, it is known AlGaInP four-element LED (AlGaInP QuaternaryLight Emitting Diode) schematic diagram.The structure of this four-element LED 100 is grown up on the substrate (Substrate) 102 of n type undoped gallium arsenide (n-doped GaAs) and light-emitting zone (Light EmittingRegion) 110.This light-emitting zone 110 comprises n type doping AlGaInP (n-doped AlGaInP) layer 103 of growing up on n type undoped gallium arsenide substrate (n-doped GaAs) 102, grow up AlGaInP active layer (AlGaInP Activelayer) 104 on n type doping AlGaInP (n-doped AlGaInP) layer 103, grow up p type doping AlGaInP (p-doped AlGaInP) layer 105 on AlGaInP active layer (AlGaInP Active layer) 104, p type doping gallium phosphide (p-doped GaP) layer 106 on p type doping AlGaInP (p-doped AlGaInP) layer 105 of growing up.At last, on p type doping gallium phosphide (p-doped AlGaInP) layer 106, form first electrode 108 and on n type undoped gallium arsenide (n-doped GaAs) substrate 102, form second electrode 109.In general, AlGaInP active layer 104 can be the active layer of double-heterostructure (Double heterostructure) or the active layer of quantum well (Quantum Well) structure.
Because the energy gap (Energy Gap) of GaAs substrate 102 is about 1.42eV, it absorbs cut-off wavelength (Cut Off Wavelength) and is about 870nm, therefore, when this four-element LED under applying bias, the electron hole flow into AlGaInP luminescent layer (AlGaInP Active layer) 104 the optical wavelength that produces all can be absorbed after entering GaAs substrate 102 less than the light of 870nm by GaAs substrate 102, make the luminous efficiency variation of light-emitting diode.
In order to solve the problem that substrate can absorb luminous energy, a kind of method of utilizing optical clear (Optically Transparent) substrate to replace n type undoped gallium arsenide substrate (n-dopedGaAs) is proposed as United States Patent (USP) 5502316.Before the electrode of the light-emitting diode of Fig. 1 formed as yet, n type undoped gallium arsenide substrate 102 can be etched earlier and be removed.Then, optical transparent substrate 122 is provided, for example, n type doping gallium phosphide (GaP) substrate, glass (Glass) substrate or quartz (Quartz) substrate utilize chip join technology (Wafer Bonding Technology) that optical transparent substrate 122 is engaged on the light-emitting zone 110 under high temperature (about 800～1000 ℃).As shown in Figure 2, when optical transparent substrate 122 conductions (for example n type doping gallium phosphide substrate), then first electrode 108 is formed on p type doping gallium phosphide (p-doped GaP) layer 106 and second electrode 111 is formed at n type doping gallium phosphide (n-doped GaP) substrate 122 and second electrode surface of n type doping gallium phosphide (n-dopedGaP) substrate 122 of cover part only, thereby forms light-emitting diode 120.So, significantly promote luminous efficiency to overcome the problem of substrate extinction.
Please refer to Fig. 3 (a) to Fig. 3 (f), it is this known schematic flow sheet that utilizes chip join fabrication techniques light-emitting diode.Shown in Fig. 3 (a), light-emitting zone is for of heap of stone brilliant on large-area single substrate (Substrate) 102.That is to say that this substrate 102 is n type undoped gallium arsenide substrate (n-dopedGaAs) temporary substrate just.After the building crystal to grow process, shown in Fig. 3 (b), on substrate 102, form light-emitting zone 110; Then, shown in Fig. 3 (c), remove the only remaining light-emitting zone 110 of this substrate 102; Then, shown in Fig. 3 (d), provide permanent substrate 122 (PermanentSubstrate; Transparency carrier for example) and under high temperature, carry out the chip join step, so-called chip join step promptly is the step that large-area this permanent substrate 122 of large-area this light-emitting zone 110 and this is engaged; Then, shown in Fig. 3 (e), on permanent substrate 122 and light-emitting zone 110, form first electrode 108 and second electrode 111 respectively; At last, shown in Fig. 3 (f), form a plurality of independent LED through the cutting back.
As everyone knows, semi-conducting material is easy to deterioration under high temperature, that is to say, because the chip join technology must be carried out under high temperature for a long time, therefore can cause the deterioration of light-emitting zone 110, makes that the element characteristic of processing technology or reliability are not good.Moreover because permanent substrate 122 and light-emitting zone 110 large-area joints, if this moment permanent substrate 122 or light-emitting zone 110 surface irregularity or have microparticle to adhere to or the warpage of light-emitting zone 110, failure is caused in the capital in the chip join step, so have influence on the qualification rate of processing technology.At last, because before removing temporary substrate 102 and permanent substrate engages 122, the mechanical strength of light-emitting zone 110 is owing to the support of having lacked temporary substrate 102, and is cracked easily in processing technology, also influenced the qualification rate of processing technology.
The another kind of problem that solves substrate absorption luminous energy proposes a kind of reflector that utilizes as United States Patent (USP) 6967117 patents the light that enters substrate is reflexed to outside the substrate.Shown in Fig. 4 (a), go up formation light-emitting zone 110 at temporary substrate (Temporary Substrate) (for example n type undoped gallium arsenide substrate (n-doped GaAs) 102), this light-emitting zone 100 can be the n type that piles up in regular turn and mixes AlGaInP (n-doped AlGaInP) layer 103, AlGaInP active layer (AlGaInP Active layer) 104, p type doping AlGaInP (p-doped AlGaInP) layer 105 and p type doping gallium phosphide (p-dopedGaP) layer 106.Then, on light-emitting zone 110, form resilient coating (Buffer Layer) 145 and reflector (Reflective Layer) 144 in regular turn.Then, shown in Fig. 4 (b), permanent substrate 142 is provided and forms diffusion barrier layer (Diffusion Barrier Layer) 143 thereon.Then, under high temperature, utilize the chip join technology that reflector 144 is engaged with diffusion barrier layer 143.At last, remove temporary substrate 102, form first electrode 112 on AlGaInP (n-doped AlGaInP) layer 103 and on permanent substrate 142, form second electrode 113 and mix, shown in Fig. 4 (c) in the n type.Because reflector 144 can reflex to light outside the permanent substrate 142 effectively, therefore, can promote the luminous efficiency of light-emitting diode 140 thus.
Please refer to Fig. 5 (a) to Fig. 5 (g), it utilizes the schematic flow sheet of chip join fabrication techniques light-emitting diode for this United States Patent (USP) 6967117.Shown in Fig. 5 (a), light-emitting zone is for of heap of stone brilliant on large-area single substrate (Substrate) 102.That is to say that this substrate 102 is n type undoped gallium arsenide substrate (n-doped GaAs) temporary substrate just.After the building crystal to grow process, shown in Fig. 5 (b), on substrate 102, form light-emitting zone 110, and on light-emitting zone 110, form resilient coating 145 and reflector 144 in regular turn; Shown in Fig. 5 (c), permanent substrate 142 is provided and on permanent substrate 142, forms diffusion barrier layer 143, then shown in Fig. 5 (d), at high temperature carry out the chip join step, reflector 144 is engaged with diffusion barrier layer 143, shown in Fig. 5 (e), remove substrate 102 afterwards, then, shown in Fig. 5 (f), on light-emitting zone 110 and permanent substrate 142, form first electrode 112 and second electrode 113 respectively; Shown in Fig. 5 (g), form a plurality of independent LED through the cutting back.
Perhaps, after Fig. 5 (e) completes, the light-emitting zone 110 of part is etched away, and the n type that first electrode 112 and second electrode 113 are formed at not etched light-emitting zone 110 is respectively mixed AlGaInP (n-doped AlGaInP) layer l03 go up and the p type doping gallium phosphide (p-doped GaP) of etched light-emitting zone 110 layers 106.Just cut afterwards and form a plurality of light-emitting diodes that have the plane formula electrode as shown in Figure 6.
Above-mentioned technology is for after carrying out the chip join step earlier, remove temporary substrate again and make electrode, remove the problem that substrate causes the mechanical strength deficiency in advance though solve United States Patent (USP) 5502316, because of first and second electrode is to make on the chip that forms joint, must fuse the step of (Alloy) during the course through excess temperature, make reflectivity descend, cause this light-emitting diode deterioration of efficiency.Especially very person more can cause light-emitting zone 110 areas less and current density this type of light-emitting diode of flowing through is more inhomogeneous if light-emitting zone 110 that earlier will part forms light-emitting diode as Fig. 6 plane formula electrode after removing again, and luminous efficiency can be lower.
In addition, United States Patent (USP) 6221683 proposes the manufacture method of another kind of light-emitting diode, shown in Fig. 7 (a), go up formation light-emitting zone 110 at temporary substrate (Temporary Substrate) (for example n type undoped gallium arsenide substrate (n-dopedGaAs)), this light-emitting zone 100 can be the n type that piles up in regular turn and mixes AlGaInP (n-doped AlGaInP) layer 103, AlGaInP active layer (A1GaInP Active layer) 104, p type doping AlGaInP (p-doped AlGaInP) layer 105 and p type doping gallium phosphide (p-doped GaP) layer 106.Then, remove temporary substrate, and mix formation first metal contact layer (MetallicContact Layer) 162 on AlGaInP (n-doped AlGaInP) layer 103 in the n type on the light-emitting zone 110.Then, shown in Fig. 7 (b), permanent substrate (PermanentSubstrate) 166 is provided and forms second metal contact layer 164 thereon.Then, shown in 7 figure (c), provide weld layer (Solder Layer) 163 between first metal contact layer 162 and second metal contact layer 164 and utilize the chip join technology to carry out the fusion of first metal contact layer 162 and second metal contact layer 164.At last, and first electrode 170 is formed on p type doping gallium phosphide (p-doped GaP) layer 106 and second electrode 172 is formed on the permanent substrate 166.Moreover, be formed at first electrode 170 of p type doping gallium phosphide (p-doped GaP) layer 106 and be formed at permanent substrate 166 second electrodes 172 and need in last step, not form, and can complete in the step formerly in advance.
Please refer to Fig. 8 (a) to Fig. 8 (g), it is depicted as the schematic flow sheet that United States Patent (USP) 6221683 utilizes chip join fabrication techniques light-emitting diode.Shown in Fig. 8 (a), light-emitting zone is of heap of stone brilliant on large-area single substrate (Substrate) 102.That is to say that this substrate 102 is n type undoped gallium arsenide substrate (n-doped GaAs) temporary substrate just.After the building crystal to grow process, shown in Fig. 8 (b), on substrate 102, form light-emitting zone 110; Then, shown in Fig. 8 (c), remove this temporary substrate 102 and on light-emitting zone 110, form a plurality of first metal contact layers 162; Then, shown in Fig. 8 (d), permanent substrate 166 is provided and on permanent substrate 166, forms a plurality of second metal contact layers 164; Then shown in Fig. 8 (e) figure, weld layer (Solder Layer) 163 is provided between first metal contact layer 162 and second metal contact layer 164, and utilizes the chip join technology to carry out the fuse step of first metal contact layer 162 and second metal contact layer 164; Then, shown in Fig. 8 (f), on light-emitting zone 110 and permanent substrate 166, form first electrode 170 and second electrode 172 respectively; At last, shown in Fig. 8 (g), after cutting, form a plurality of independent LED.
In like manner, the processing technology of above-mentioned light-emitting diode is before removing temporary substrate 102 and permanent substrate engages 122, the mechanical strength of light-emitting zone 110 is owing to the support of having lacked temporary substrate 102, and is cracked easily in processing technology, also influenced the qualification rate of processing technology.Moreover, because of first and second electrode is just to make, must fuse the step of (Alloy) during the course through excess temperature after the chip join step is finished, make this light-emitting diode deterioration of efficiency.
Summary of the invention
Purpose of the present invention is for proposing a kind of crystal grain maqting type light-emitting diode, and it has the bigger permanent substrate of sectional area, and has best luminous efficiency.
The present invention proposes a kind of manufacturing method for LED, comprises the following steps:
Temporary substrate is provided; On this temporary substrate, form light-emitting zone; First surface at this light-emitting zone forms a plurality of first electrodes; Remove this temporary substrate; Second surface at this light-emitting zone forms a plurality of ohmic contact points, reflector, barrier layer, adhered layer in regular turn; Cut this light-emitting zone, described ohmic contact point, this reflector, this barrier layer, with this adhered layer after form a plurality of crystal grain, wherein, each crystal grain all has at least the first electrode, and this light-emitting zone, described ohmic contact point, this reflector, this barrier layer of part, with this adhered layer; And, permanent substrate is provided, the sectional area of the first surface of this permanent substrate is greater than the sectional area of described crystal grain; Formation metal level and this metal level can be divided into first area and second area and this first area and be considered as second electrode on this first surface of this permanent substrate; And, utilize the crystal grain joining technique this adhered layer of a crystal grain to be engaged in this second area of this metal level.
According to described manufacturing method for LED, wherein this permanent substrate is a time adhesion substrate.
According to described manufacturing method for LED, wherein this time adhesion substrate is the ceramic substrate that is made of aluminium nitride.
According to described manufacturing method for LED, the material of wherein said ohmic contact point comprises the germanium billon.
According to described manufacturing method for LED, wherein the material in this reflector comprises gold, aluminium or silver.
According to described manufacturing method for LED, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
According to described manufacturing method for LED, wherein the material of this adhered layer comprises Sillim or tin silver.
According to described manufacturing method for LED, wherein this temporary substrate is a n type undoped gallium arsenide substrate.
According to described manufacturing method for LED, wherein this light-emitting zone comprises: n type doping AlGaInP layer; Grow up AlGaInP active layer on this n type doping AlGaInP layer; Grow up p type doping AlGaInP layer on this AlGaInP active layer; And the p type doping gallium phosphide layer on this p type doping AlGaInP layer of growing up.
According to described manufacturing method for LED, this AlGaInP active layer active layer that is double-heterostructure or be the active layer of quantum well structure wherein.
Moreover the present invention proposes a kind of light-emitting diode, comprising: permanent substrate, and this permanent substrate has first surface; Metal level is positioned on this first surface of this permanent substrate and this metal level can be divided into first area and second area; And this first area of this metal level is considered as first electrode; And crystal grain is positioned on this second area of this metal level; Wherein, this crystal grain comprises second electrode, light-emitting zone at least, and this crystal grain utilizes the crystal grain joining technique this crystal grain to be engaged in the electric connection of carrying out on this second area of this metal level between this light-emitting zone and this metal level.
According to described light-emitting diode, wherein this permanent substrate is a time adhesion substrate.
According to described light-emitting diode, wherein this time adhesion substrate is the ceramic substrate by aluminium nitride constituted.
According to described light-emitting diode, wherein this chip also comprises a plurality of ohmic contact points that are formed on this light-emitting zone, the reflector that covers described ohmic contact point, the adhered layer that covers the barrier layer in this reflector and cover this reflector; Wherein, this adhered layer engages with this metal level on this second area.
According to described light-emitting diode, the material of wherein said ohmic contact point comprises the germanium billon.
According to described light-emitting diode, wherein the material in this reflector comprises gold, aluminium or silver.
According to described light-emitting diode, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
According to described light-emitting diode, wherein the material of this adhered layer comprises Sillim or tin silver.
According to described light-emitting diode, wherein this light-emitting zone comprises: n type doping AlGaInP layer; Grow up AlGaInP active layer on this n type doping AlGaInP layer; Grow up p type doping AlGaInP layer on this AlGaInP active layer; And the p type doping gallium phosphide layer on this p type doping AlGaInP layer of growing up.
According to described light-emitting diode, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
The present invention also provides a kind of manufacturing method for LED, comprises the following steps: to provide temporary substrate; On this temporary substrate, form light-emitting zone; First surface at this light-emitting zone forms a plurality of first electrodes; Remove this temporary substrate; Second surface at this light-emitting zone forms a plurality of ohmic contact points, reflector, barrier layer, adhered layer in regular turn; Cut this light-emitting zone, described ohmic contact point, this reflector, this barrier layer, with this adhered layer after form a plurality of chips, wherein, each this chip all has at least the first electrode, and this light-emitting zone, described ohmic contact point, this reflector, this barrier layer of part, with this adhered layer; The metal permanent substrate is provided, and the sectional area of the first surface of this metal permanent substrate can divide into first area and second area greater than the sectional area of described chip and this first surface and this first area is considered as second electrode; And utilize the chip join technology that this adhered layer of a chip is engaged in this second area.
According to described manufacturing method for LED, the material of wherein said ohmic contact point comprises the germanium billon.
According to described manufacturing method for LED, wherein the material in this reflector comprises gold, aluminium or silver.
According to described manufacturing method for LED, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
According to described manufacturing method for LED, wherein the material of this adhered layer comprises Sillim or tin silver.
According to described manufacturing method for LED, wherein this temporary substrate is a n type undoped gallium arsenide substrate.
According to described manufacturing method for LED, wherein this light-emitting zone comprises: n type doping AlGaInP layer; Grow up AlGaInP active layer on this n type doping AlGaInP layer; Grow up p type doping AlGaInP layer on this AlGaInP active layer; And the p type doping gallium phosphide layer on this p type doping AlGaInP layer of growing up.
According to described manufacturing method for LED, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
The present invention also provides a kind of light-emitting diode, comprising: the metal permanent substrate, and this metal permanent substrate has first surface and this first surface can be divided into first area and second area, and this first area is considered as first electrode; And chip is positioned on this second area of this metal level; Wherein, this chip comprises and comprises second electrode, the light-emitting zone that piles up at least, and this chip utilizes the chip join technology to be engaged in to make this metal permanent substrate and this light-emitting zone form on this second area of this metal level and electrically connects.
According to described light-emitting diode, wherein this chip also comprise a plurality of reflector that are formed at ohmic contact point on this light-emitting zone, cover described ohmic contact point, cover this reflector barrier layer, with the adhered layer in this reflector of covering; Wherein, this adhered layer engages with this metal level on this second area.
According to described light-emitting diode, the material of wherein said ohmic contact point comprises the germanium billon.
According to described light-emitting diode, wherein the material in this reflector comprises gold, aluminium or silver.
According to described light-emitting diode, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
According to described light-emitting diode, wherein the material of this adhered layer comprises Sillim or tin silver.
According to described light-emitting diode, wherein this light-emitting zone comprises: n type doping AlGaInP layer; Grow up AlGaInP active layer on this n type doping AlGaInP layer; Grow up p type doping AlGaInP layer on this AlGaInP active layer; And the p type doping gallium phosphide layer on this p type doping AlGaInP layer of growing up.
According to described light-emitting diode, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
In sum, described permanent substrate is constituted by serve as reasons high thermal conductive insulating substrate or high heat conductive metal substrate of time adhesion substrate and this time adhesion substrate, as aluminium nitride substrate or be the copper metal substrate; The material of described ohmic contact point comprises the germanium billon; The material in this reflector comprises metals like gold, aluminium or the silver with high reflectance or is metal oxide layer and the combination with high-reflectivity metal, this metal oxide layer can be designed the effect with reflectance coating because of itself and light LED material refractive index different, and the metal that also prevents high reflectance in addition and light LED material counterdiffusion mutually cause reflectivity to descend; The material of this barrier layer comprises platinum, nickel, indium oxide layer of tin or tungsten etc.; The material of adhered layer comprises tin, Sillim, Xi Yin, tin indium or golden indium; And this temporary substrate is a n type undoped gallium arsenide substrate.
Quantum well therefore, to be the cremasteric reflex layer leave permanent substrate in order to the light reflection that will go into to inject permanent substrate to advantage of the present invention.Moreover, when chip of the present invention and substrate fuse low temperature process technology, can not cause the deterioration of chip.Moreover, the present invention utilizes individual other of chip to be engaged on the metal level of permanent substrate, because the length and width of chip are suitable with the thickness of chip, so in processing technology, can not cause cracked inadequately because of mechanical strength, the cracked phenomenon of wafer (wafer) that known relatively chip join technology is taken place causes the low problem of qualification rate.And, when after light-emitting zone is being removed the GaAs temporary substrate, causing fragmentation, till still can continuing follow-up cutting processing technology and finishing, so the loss of chip can be dropped to minimum to chip because of the mechanical strength deficiency.Therefore, light-emitting diode of the present invention its qualification rate (Yield) in the processing technology of chip join almost can arrive 100%.Moreover the light reflection that also light-emitting zone can be produced is in order to increase the brightness of light-emitting diode.In addition, because use than the inferior adhesion substrate of the high heat conduction of chip larger area, helps heat radiation, be more suitable for the application of High Power LED.
Description of drawings
Fig. 1 is known AlGaInP four-element LED schematic diagram;
Fig. 2 is known another AlGaInP four-element LED schematic diagram;
Fig. 3 (a) to Fig. 3 (f) be this known schematic flow sheet that utilizes chip join fabrication techniques light-emitting diode;
Fig. 4 (a) is depicted as known light-emitting diodes pipe processing technique schematic diagram with reflector to Fig. 4 (c);
Fig. 5 (a) is depicted as to Fig. 5 (g) and utilizes the chip join fabrication techniques to have the schematic flow sheet of the light-emitting diode in reflector;
Fig. 6 has the light-emitting diode schematic diagram in reflector for known another kind;
Fig. 7 (a) is depicted as known light-emitting diodes pipe processing technique schematic diagram with weld layer to Fig. 7 (c);
Fig. 8 (a) is depicted as to Fig. 8 (g) and utilizes the chip join fabrication techniques to have the schematic flow sheet of the light-emitting diode of weld layer;
Fig. 9 is a crystal grain maqting type light emitting diode construction schematic diagram of the present invention;
Figure 10 (a) is depicted as the light-emitting diode schematic flow sheet that the present invention utilizes the crystal grain joining technique to make to Figure 10 (f); And
Figure 11 is considered as another reflector for the metal level of light-emitting diode of the present invention.
Wherein, description of reference numerals is as follows:
100,120 known light-emitting diode 102 n type undoped gallium arsenide substrates
103 n type doping AlGaInP layers, 104 AlGaInP active layer
105 p type doping AlGaInP layers, 106 p type doping gallium phosphide
108,112,170 first electrodes, 109,111,113,172 second electrodes
110 light-emitting zones, 122 n type doping gallium phosphide substrates
142,166 permanent substrates, 143 diffusion barrier layers
144 reflector, 145 resilient coatings
162 first metal contact layers, 163 weld layers
164 second metal contact layers, 500 light-emitting diodes of the present invention
508 first electrodes, 510 light-emitting zones
520 ohmic contact are put 522 reflector
524 barrier layers, 526 adhered layers
530 adhesion substrates of 528 metal levels
550 crystal grain
Embodiment
At above-mentioned shortcoming, the present invention proposes crystal grain maqting type (Chip Bonding) light-emitting diode and solves the known shortcoming of utilizing the light-emitting diode of chip join technology manufacturing.Please refer to Fig. 9, it is depicted as crystal grain maqting type light emitting diode construction schematic diagram of the present invention.These crystal grain maqting type light-emitting diode 500 structures comprise first electrode 508, light-emitting zone 510, ohmic contact point (Ohmic Contact Dot) 520, reflector 522, barrier layer (Barrier Layer) 524, adhered layer (Eutectic Layer) 526, are considered as second metal layer of electrodes (Metal Layer) 528 and inferior adhesion substrate (Submount) 530.Wherein, first electrode 508, light-emitting zone 510, ohmic contact point (Ohmic Contact Dot) 520, reflector 522, barrier layer (Barrier Layer) 524, adhered layer 526 are considered as crystal grain (Chip) 550, and first electrode 508 is configured as plane electrode with metal level 528, and inferior adhesion substrate 530 is considered as permanent substrate, moreover the sectional area of metal level 528 and time adhesion substrate 530 is greater than the sectional area of light-emitting zone 510.
For configuration that can form plane electrode and the luminous efficiency that does not influence light-emitting diode, the present invention provides sectional area bigger inferior adhesion substrate 530 separately, and the crystal grain that cutting is finished is positioned on time adhesion substrate fuses.Its processing technology step is described below:
Shown in Figure 10 (a), at first, provide n type undoped gallium arsenide chip as substrate, light-emitting zone (LightEmitting Region) 510 and on the substrate (Substrate) 502 of n type undoped gallium arsenide (n-doped GaAs), grow up, and form first electrode 508 in the side of light-emitting zone 510.This light-emitting zone 510 comprises n type doping AlGaInP (n-doped AlGaInP) layer of growing up on n type undoped gallium arsenide substrate (n-doped GaAs) at least, grow up AlGaInP active layer (AlGaInP Active layer) on n type doping AlGaInP (n-dopedAlGaInP) layer, grow up p type doping AlGaInP (p-dopedAlGaInP) layer on AlGaInP active layer (AlGaInP Active layer), the p type doping gallium phosphide (p-doped GaP) layer on p type doping AlGaInP (p-doped AlGaInP) layer of growing up.In general, AlGaInP active layer (AlGaInP Activelayer) can be the active layer of double-heterostructure (Double heterostructure) or the active layer of quantum well (Quantum Well) structure.Certainly, according to the light-emitting diode of different structure, light-emitting zone 510 can have various combination, and the present invention is not limited to the light-emitting zone practical structure.
Shown in Figure 10 (b), after the substrate (Substrate) of n type undoped gallium arsenide (n-doped GaAs) removed, on the n of light-emitting zone 510 type doping AlGaInP (n-doped AlGaInP) layer, form a plurality of ohmic contact points 520, reflector 522, barrier layer 524, adhered layer 526 in regular turn.According to embodiments of the invention, the material of ohmic contact point 520 is germanium billon (Ge/Au); Reflector 522 materials can be the metal of gold (Au), aluminium (Al) or silver high reflectances such as (Ag) or are metal oxide layer and the combination with high-reflectivity metal, wherein, this metal oxide layer can be designed the effect with reflectance coating because of itself and light LED material refractive index different, and the metal that also prevents high reflectance in addition and light LED material counterdiffusion mutually cause reflectivity to descend; Barrier layer 524 can be platinum (Pt), nickel (Ni), tungsten (W) or indium oxide layer of tin (Indium Tin Oxide Layer) equistability height and the high metal of fusing point; Adhered layer 526 materials can be tin (Sn), Sillim (AuSn), tin indium (SnIn), golden indium (AuIn) or tin silver metals such as (PbAg), and it can form the congruent melting state in about 300 ℃.
Shown in Figure 10 (c), the above-mentioned structure of finishing is cut, form a plurality of independent crystal grain 550.
Shown in Figure 10 (d), adhesion substrate 530 is provided large-area time, and on inferior adhesion substrate 530, forms metal level 528.Then, shown in Figure 10 (e), a plurality of crystal grain 550 that cutting is finished carry out fuse step under 300 ℃ of temperature the time, and the adhered layer of crystal grain 550 is fused on the large-area metal level 528.At last, shown in Figure 10 (f),, form a plurality of independent LED with the cutting step of large-area adhesion substrate 530 with metal level 528.
Because inferior adhesion substrate 530 and metal level 528 that cutting is finished provide the inferior adhesion substrate 530 of sectional area greater than light-emitting zone 510, and on inferior adhesion substrate 530, form metal level 528.Because the sectional area of metal level 528 is greater than the sectional area of crystal grain light-emitting zone 5510, therefore, after follow-up crystal grain 550 fuses with time adhesion substrate 530, the zone that is covered by crystal grain 550 is not considered as the first area, this first area can be used as second electrode and is used for follow-up line, and the zone that is covered by crystal grain 550 is considered as the zone that second area just fuses.That is to say that the metal on the first area of this metal level 528 promptly is considered as second electrode, and the second area of this metal level 528 can engage metal level 528 and light-emitting zone 510 in the crystal grain 550 are electrically connected with crystal grain 550.
Moreover, the present invention also can be advanced the cutting step of places adhesion substrate and metal level, and an independent crystal grain is fused on the cutting inferior adhesion substrate and metal level finished, and finish light-emitting diode of the present invention, it has the feature of the sectional area of metal level 528 greater than the sectional area of crystal grain 550.
According to embodiments of the invention, the material of metal level is the combination of gold (Au), aluminium (Al), silver metals such as (Ag) or above-mentioned metal.Inferior adhesion substrate is considered as permanent substrate, and its material can be for example aluminium nitride (AlN) substrate of high thermal conductive insulating substrate.
At last, crystal grain 550 and time adhesion substrate 530 fused under 300 ℃ of temperature the time make metal level 528 and light-emitting zone 510 electrically connect, and and then finish as shown in Figure 8 crystal grain maqting type light-emitting diode.
Moreover permanent substrate of the present invention also can directly replace with high heat conductive metal permanent substrate, that is to say, does not need to form metal level on the metal permanent substrate again, and directly the crystal grain that sectional area is less is engaged on the metal permanent substrate.And the metal permanent substrate can be the copper metal substrate.
Moreover advantage of the present invention is that the cremasteric reflex layer leaves permanent substrate in order to the light reflection that will go into to inject permanent substrate.Moreover, when crystal grain of the present invention and substrate fuse low temperature process technology, its processing technology temperature can can't cause the deterioration of crystal grain below 300 ℃ when being 20 to eight ten (Sn20Au80) with Sillim's ratio.
Moreover, the present invention utilizes individual other of crystal grain to be engaged on the metal level of permanent substrate, because the length and width of crystal grain are suitable with the thickness of crystal grain, so in processing technology, can not cause cracked inadequately because of mechanical strength, the cracked phenomenon of wafer (wafer) that known relatively chip join technology is taken place causes the low problem of qualification rate.And, when after light-emitting zone is being removed the GaAs temporary substrate, causing fragmentation, till still can continuing follow-up cutting processing technology and finishing, so the loss of crystal grain can be dropped to minimum to crystal grain because of the mechanical strength deficiency.Therefore, light-emitting diode of the present invention its qualification rate (Yield) in the processing technology that crystal grain engages almost can arrive 100%.Moreover, as shown in figure 11, because permanent substrate 530 metal levels 528 sectional areas are all greater than the sectional area of crystal grain 550, therefore in crystal grain 550, there is reflector 522 can reflect the light that light-emitting zone 510 produced, this metal level 528 also can be considered as another reflector, and also the light reflection that light-emitting zone can be produced is in order to increase the brightness of light-emitting diode.In addition, because use than the inferior adhesion substrate of the high heat conduction of crystal grain larger area, helps heat radiation, be more suitable for the application of High Power LED.
In sum; though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking appended the scope that claim defined.
Claims (36)
1. a manufacturing method for LED comprises the following steps:
Temporary substrate is provided;
On this temporary substrate, form light-emitting zone;
First surface at this light-emitting zone forms a plurality of first electrodes;
Remove this temporary substrate;
Second surface at this light-emitting zone forms a plurality of ohmic contact points, reflector, barrier layer, adhered layer in regular turn;
Cut this light-emitting zone, described ohmic contact point, this reflector, this barrier layer, with this adhered layer after form a plurality of crystal grain, wherein, each crystal grain all has at least the first electrode, and this light-emitting zone, described ohmic contact point, this reflector, this barrier layer of part, with this adhered layer;
Permanent substrate is provided, and the sectional area of the first surface of this permanent substrate is greater than the sectional area of described crystal grain;
Formation metal level and this metal level are divided into first area and second area and this first area and are considered as second electrode on this first surface of this permanent substrate; And
Utilize the crystal grain joining technique this adhered layer of a crystal grain to be engaged in this second area of this metal level.
2. manufacturing method for LED according to claim 1, wherein this permanent substrate is a time adhesion substrate.
3. manufacturing method for LED according to claim 2, the wherein ceramic substrate of this time adhesion substrate for constituting by aluminium nitride.
4. manufacturing method for LED according to claim 1, the material of wherein said ohmic contact point comprises the germanium billon.
5. manufacturing method for LED according to claim 1, wherein the material in this reflector comprises gold, aluminium or silver.
6. manufacturing method for LED according to claim 1, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
7. manufacturing method for LED according to claim 1, wherein the material of this adhered layer comprises Sillim or tin silver.
8. manufacturing method for LED according to claim 1, wherein this temporary substrate is a n type undoped gallium arsenide substrate.
9. manufacturing method for LED according to claim 1, wherein this light-emitting zone comprises:
N type doping AlGaInP layer;
Grow up AlGaInP active layer on this n type doping AlGaInP layer;
Grow up p type doping AlGaInP layer on this AlGaInP active layer; And
Grow up p type doping gallium phosphide layer on this p type doping AlGaInP layer.
10. manufacturing method for LED according to claim 9, wherein this AlGaInP active layer active layer that is double-heterostructure or be the active layer of quantum well structure.
11. a light-emitting diode comprises:
Permanent substrate, this permanent substrate has first surface;
Metal level is positioned on this first surface of this permanent substrate, and this metal level divides into first area and second area, and this first area is considered as first electrode; And
Crystal grain is positioned on this second area of this metal level;
Wherein, this crystal grain comprises and comprises second electrode, the light-emitting zone that piles up at least, and this crystal grain utilizes the crystal grain joining technique to be engaged in to make this metal level and this light-emitting zone form on this second area of this metal level and electrically connects.
12. light-emitting diode according to claim 11, wherein this permanent substrate is a time adhesion substrate.
13. light-emitting diode according to claim 12, wherein this time adhesion substrate is the ceramic substrate by aluminium nitride constituted.
14. light-emitting diode according to claim 11, wherein this crystal grain also comprises a plurality of ohmic contact points that are formed on this light-emitting zone, the reflector that covers described ohmic contact point, the adhered layer that covers the barrier layer in this reflector and cover this reflector; Wherein, this adhered layer engages with this metal level on this second area.
15. light-emitting diode according to claim 14, the material of wherein said ohmic contact point comprises the germanium billon.
16. light-emitting diode according to claim 14, wherein the material in this reflector comprises gold, aluminium or silver.
17. light-emitting diode according to claim 14, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
18. light-emitting diode according to claim 14, wherein the material of this adhered layer comprises Sillim or tin silver.
19. light-emitting diode according to claim 11, wherein this light-emitting zone comprises:
N type doping AlGaInP layer;
Grow up AlGaInP active layer on this n type doping AlGaInP layer;
Grow up p type doping AlGaInP layer on this AlGaInP active layer; And
Grow up p type doping gallium phosphide layer on this p type doping AlGaInP layer.
20. light-emitting diode according to claim 19, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
21. a manufacturing method for LED comprises the following steps:
Temporary substrate is provided;
On this temporary substrate, form light-emitting zone;
First surface at this light-emitting zone forms a plurality of first electrodes;
Remove this temporary substrate;
Second surface at this light-emitting zone forms a plurality of ohmic contact points, reflector, barrier layer, adhered layer in regular turn;
Cut this light-emitting zone, described ohmic contact point, this reflector, this barrier layer, with this adhered layer after form a plurality of crystal grain, wherein, each crystal grain all has at least the first electrode, and this light-emitting zone, described ohmic contact point, this reflector, this barrier layer of part, with this adhered layer;
The metal permanent substrate is provided, and the sectional area of the first surface of this metal permanent substrate divides into first area and second area greater than the sectional area of described crystal grain and this first surface and this first area is considered as second electrode; And
Utilize the crystal grain joining technique that this adhered layer of a crystal grain is engaged in this second area.
22. manufacturing method for LED according to claim 21, the material of wherein said ohmic contact point comprises the germanium billon.
23. manufacturing method for LED according to claim 21, wherein the material in this reflector comprises gold, aluminium or silver.
24. manufacturing method for LED according to claim 21, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
25. manufacturing method for LED according to claim 21, wherein the material of this adhered layer comprises Sillim or tin silver.
26. manufacturing method for LED according to claim 21, wherein this temporary substrate is a n type undoped gallium arsenide substrate.
27. manufacturing method for LED according to claim 21, wherein this light-emitting zone comprises:
N type doping AlGaInP layer;
Grow up AlGaInP active layer on this n type doping AlGaInP layer;
Grow up p type doping AlGaInP layer on this AlGaInP active layer; And
Grow up p type doping gallium phosphide layer on this p type doping AlGaInP layer.
28. manufacturing method for LED according to claim 27, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
29. a light-emitting diode comprises:
The metal permanent substrate, this metal permanent substrate has first surface and this first surface is divided into first area and second area, and this first area is considered as first electrode; And
Crystal grain, it is positioned on this second area of this metal level;
Wherein, this crystal grain comprises and comprises second electrode, the light-emitting zone that piles up at least, and this crystal grain utilizes the crystal grain joining technique to be engaged in to make this metal permanent substrate and this light-emitting zone form on this second area of this metal level and electrically connects.
30. light-emitting diode according to claim 29, wherein this crystal grain also comprise a plurality of reflector that are formed at ohmic contact point on this light-emitting zone, cover described ohmic contact point, cover this reflector barrier layer, with the adhered layer in this reflector of covering; Wherein, this adhered layer engages with this metal level on this second area.
31. light-emitting diode according to claim 30, the material of wherein said ohmic contact point comprises the germanium billon.
32. light-emitting diode according to claim 30, wherein the material in this reflector comprises gold, aluminium or silver.
33. light-emitting diode according to claim 30, wherein the material of this barrier layer comprises platinum, tungsten, nickel or indium oxide layer of tin.
34. light-emitting diode according to claim 30, wherein the material of this adhered layer comprises Sillim or tin silver.
35. light-emitting diode according to claim 29, wherein this light-emitting zone comprises:
N type doping AlGaInP layer;
Grow up AlGaInP active layer on this n type doping AlGaInP layer;
Grow up p type doping AlGaInP layer on this AlGaInP active layer; And
Grow up p type doping gallium phosphide layer on this p type doping AlGaInP layer.
36. light-emitting diode according to claim 35, wherein this AlGaInP active layer is the active layer of double-heterostructure or the active layer of quantum well structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100928646A CN100394624C (en) | 2006-06-16 | 2006-06-16 | Structure of LED, and fabricating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100928646A CN100394624C (en) | 2006-06-16 | 2006-06-16 | Structure of LED, and fabricating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1874021A true CN1874021A (en) | 2006-12-06 |
| CN100394624C CN100394624C (en) | 2008-06-11 |
Family
ID=37484374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100928646A Active CN100394624C (en) | 2006-06-16 | 2006-06-16 | Structure of LED, and fabricating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100394624C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054270A (en) * | 2013-04-27 | 2018-05-18 | 新世纪光电股份有限公司 | Light emitting diode construction |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1198339C (en) * | 2002-04-04 | 2005-04-20 | 国联光电科技股份有限公司 | Structure of light-emitting diode and method for making the same |
| US7119372B2 (en) * | 2003-10-24 | 2006-10-10 | Gelcore, Llc | Flip-chip light emitting diode |
| CN100359706C (en) * | 2004-03-26 | 2008-01-02 | 晶元光电股份有限公司 | Organic bonding luminous assembly with ohmic metal contact |
-
2006
- 2006-06-16 CN CNB2006100928646A patent/CN100394624C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108054270A (en) * | 2013-04-27 | 2018-05-18 | 新世纪光电股份有限公司 | Light emitting diode construction |
| CN108054270B (en) * | 2013-04-27 | 2019-11-05 | 新世纪光电股份有限公司 | Light emitting diode construction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100394624C (en) | 2008-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100347866C (en) | Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor | |
| KR102401826B1 (en) | Light emitting device package and lighting apparatus | |
| US8017967B2 (en) | Light-emitting element including a fusion-bonding portion on contact electrodes | |
| US8368100B2 (en) | Semiconductor light emitting diodes having reflective structures and methods of fabricating same | |
| CN111509112B (en) | Wavelength-converted semiconductor light emitting device | |
| JP5251038B2 (en) | Light emitting device | |
| CN100362671C (en) | Solid-state element and solid-state element device | |
| CN1592974A (en) | Semiconductor chip for optoelectronics and method for production thereof | |
| CN1552103A (en) | Light emitting diodes including modifications for light extraction and manufacturing methods therefor | |
| CN1925177A (en) | Semiconductor luminescent device, structure unit and manufacturing method | |
| JP2001203386A (en) | Group iii nitride ligh-emitting device with raised light generation capability | |
| CN1741294A (en) | Semiconductor light emitting device and manufacturing method for semiconductor light emitting device | |
| CN1731592A (en) | Flip-chip bonded structure light-emitting diode and its manufacture method | |
| CN1913263A (en) | Laser diode | |
| CN1251688A (en) | Light element device and method for manufacturing same | |
| JP2008091862A (en) | Nitride semiconductor light emitting device, and manufacturing method of nitride semiconductor light emitting device | |
| TWI305960B (en) | Light emitting diode and method manufacturing the same | |
| CN1305633C (en) | Laser separated die with tapered sidewalls for improved light extraction | |
| CN1198339C (en) | Structure of light-emitting diode and method for making the same | |
| CN1655372A (en) | Semiconductor light emitting device and method of manufacturing the same | |
| US9437784B2 (en) | Light emitting device | |
| TWI236772B (en) | Semiconductor light emitting element and semiconductor light emitting device | |
| CN104900770A (en) | LED chips, manufacturing method thereof and display device | |
| US8410511B2 (en) | Methods for high temperature processing of epitaxial chips | |
| US11398589B2 (en) | Light emitting device package and light source device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |