CN1871752B - Surface emitting and receiving photonic device with lens - Google Patents
Surface emitting and receiving photonic device with lens Download PDFInfo
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- CN1871752B CN1871752B CN200480030764XA CN200480030764A CN1871752B CN 1871752 B CN1871752 B CN 1871752B CN 200480030764X A CN200480030764X A CN 200480030764XA CN 200480030764 A CN200480030764 A CN 200480030764A CN 1871752 B CN1871752 B CN 1871752B
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Abstract
A surface-emitting laser (see Fig. 2, Character 10), in which light is emitted vertically at one end from a near 45 DEG angled facet, includes a second end (see Fig. 2, Character 28) having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser (see Fig. 2, Character 10) comprises a divergence-compensating lens (see Fig. 21, Character 282) on the surface above the near 45 DEG angled facet.
Description
The present invention requires the U.S. Provisional Application submitted on October 20th, 2003 the 60/512nd, No. 189, and the priority of No. the 60/578th, 289, the U.S. Provisional Application of submitting on June 10th, 2004, and the disclosure of these applications is incorporated herein by reference.
Technical field
The present invention relates generally to improved surface emitting and receiving photonic device and the method that is used to make them, relate in particular to the surface emitting photonic device that combines lens for raising the efficiency.
Background technology
Semiconductor laser is normally made with the formation active layer parallel with substrate surface via the semi-conducting material of the suitable layering of growing on substrate by mocvd (MOCVD) or molecular beam epitaxy (MBE).This material is used various semiconductor processes tool for processing then, combines the laser optical cavity of active layer with generation, and hard contact is appended to semi-conducting material.At last, usually by at each terminal splitting semi-conducting material of laser cavity to form the laser minute surface, to determine the border or the end of laser optical cavity, so that when the contact was applied bias voltage, the electric current that flows through active layer that is produced makes launched photon from the border facet of active layer on perpendicular to sense of current.
Prior art also discloses the method that is used for forming by etching the minute surface of semiconductor laser, thereby the permission laser can be integrated with other photonic device monolithic on same substrate.By creating these minute surfaces with the angle of the critical angle of in optical cavity, propagating greater than light so that to form full Inner reflecting surface in optical cavity also be known.
Prior art has also been described and has been used engraving method to form two full Inner reflectings surface at each end in linear laser chamber, and wherein each face is to settle with angle at 45, active layer plane.In these devices, light in the optical cavity can vertically upward lead at an end of optical cavity, cause a surface emitting on the face, and the face at the other end place of optical cavity can become opposite angle, with light leading towards laser structure below vertically downward such as high reflectivity stack.
Prior art has also been described the device with etched 45 ° of faces and splitting surface combination.The device of gained can not be tested in full wafer, and suffers the shortcoming identical with the splitting surface device thus.In addition, in view of the demand of splitting, they and monolithic are integrated incompatible.Yet, people such as Chao attempts to overcome these shortcomings by the waveguiding structure that interruption is provided in IEEE Photonics Technology Letters (communication of IEEE photon technology) the 7th volume 836-838 page or leaf, but the device of gained all suffers scattering at each end of laser cavity.Prior art has also been described the use to calibration InP lens; Yet these are to be come etched to 50 μ m and after substrate side has formed lens to be lower than 45 ° of faces by skiving at substrate.
Vcsel (VCSEL) becomes universal in the past few years; Yet VCSEL does not allow the monolithic in a plurality of device plane integrated, and only allows light to leave its surface mirror with the vertical incidence angle.A common aspect of these existing surface emitting devices is that photon is always launched from optical cavity on the direction perpendicular to the active layer plane.
Summary of the invention
According to the present invention, a kind of improved surface-emitting semiconductor laser is provided, wherein light is launched in the emitter terminals of optical cavity on perpendicular to the direction on laser active layer plane, and wherein, the echo area emission of light in the active layer plane of the relative end of optical cavity.The operation of monitoring laser device is convenient in this arrangement, and can influence light output sharply.According to a kind of form of the present invention, on emitter terminals, provide reflection to change layer or heap, and in another kind of form of the present invention, in laser cavity, provide filter element, allow basically laser operations with single longitudinal mode.In addition,, on the substrate identical, provide surface and plane internal detector, and settled a plurality of laser cavities so that a plurality of wavelength can be in common position emission with laser according to the present invention.
One embodiment of the present of invention are at a kind of improved surface emitting laser, wherein, on substrate, make the semiconductor laser of the chamber form of elongating with continuous multilayer, comprise the active layer that is parallel to substrate surface, upper and lower coating and go up contact layer, it has a face that becomes the angle in first emitter terminals, and has an echo area that comprises vertical plane at second reflection end.This laser can adopt the form at the outside tapered ridge waveguide of emitter terminals, and in a kind of form of the present invention, the echo area of second end of reflector also can comprise the distributed Bragg reflector (DBR) adjacent with this face.These Laser Devices also can comprise the supervision photoelectric detector adjacent with DBR, and it comes the intensity of monitoring laser in response to a spot of light of the surface launching from the echo area.The back side of MPD preferably is designed to have nearly Brewster's angle, makes it only unreflecting to what propagate in optical cavity and MPD device basically.The integral part that MPD can be used as DBR forms, and so that the laser reflectivity at the second end place is made contributions, perhaps can be used as independent element and forms.DBR can replace with reflectivity change layer or heap.
Last contact layer can be the low bandgap semiconductor material, and allow to form ohm contact, it preferably combines the hole in becoming the edged surface district, removing light-absorption layer from the surface, and improves the efficient of device.
In another embodiment of the present invention, the top surface part of the optical cavity of emitter terminals can scribble dielectric layer or heap, and to change the reflectivity of laser output place, wherein this top surface part is becoming on the edged surface to extend, and comprise above-mentioned hole, wherein this surface is parallel to active layer.
These Laser Devices also can be in the echo area in conjunction with a plurality of filters to produce another embodiment, wherein the available basically single longitudinal mode of this device comes work.These filters can form via be etched with the filter element that separates each other that a series connection is provided between the distributed Bragg reflector that provides in the end face of laser and first embodiment by semiconductor layer.Perhaps, longitudinal mode can be produced by the change of the reflection on the end facet of the laser in echo area layer or heap.
According to another embodiment of the present invention, a kind of fluorescence detector is placed on the other substrate of laser, and forms integral body with laser, because it has used the identical extension type structure of on the substrate laser being used.In this case, etching epitaxial loayer during the etching laser cavity occupies the detector region of the substrate surface adjacent with laser with manufacturing.The suitable electrode of deposition on detector region makes that the light of bump can be detected thereon.This allows whole together abreast optical transmitting set and the photodetector of forming on single substrate.
In another embodiment of the present invention, photodetector is the integral in-plane detector with one-tenth edged surface of 45 °, and it is positioned at laser next door, and makes with identical extension type structure that laser uses.This detector is elongated, and generally is parallel to laser axis to save on-chip space.The light that detects impinges upon on the detector surface on the edged surface, and is directed to the active region of detector by the full Inner reflection that becomes edged surface.Can make this surface reception detector become extremely quick by controlling its length and width.The surface that surpasses 45 ° of one-tenth edged surfaces that is parallel to active layer can scribble dielectric layer or heap, so that its antireflection, thereby detector is worked better.
For the output of Wavelength-selective is provided, according to another embodiment of the present invention, can settle a plurality of surface-emitting lasers chamber, make its transmitting terminal assemble adjacent to each other, and these chambeies stretch out; For example, as spoke around central shaft.Extension type structure in each Laser Devices can be different slightly, so that launch different wavelength from each.The propinquity of transmitting terminal allows can such as optical fiber, and by optionally activating laser, one or more wavelength of selecting to be sent in the optical fiber by easily in conjunction with entering a receiver media from the output of all lasers then.
In another embodiment, can be placed in the angle of any desired on the substrate according to laser of the present invention, so that its packaging density is maximized, because used chemically assisted ion beam etching (CAIBE) to form this device, and this process is carried out uniform etching, and does not depend on the crystal face of semi-conducting material.Thus, for example, they can be placed on the rectangle substrate diagonally.Conventional splitting disapproves this orientation.
In an embodiment more of the present invention, be not the reflection end that forms laser with vertical plane, but expectation with an angle etching it, all to produce Vertical Launch or reception at two ends.Surface on this second one-tenth angle plane also can have the hole and absorb preventing in contact layer, and can change layer or heap in conjunction with reflection.
To one of the various embodiments described above common problem is that propagates light in the laser that becomes the angle plane place to produce is dispersed.The light that generates in laser cavity is axially advanced along the chamber, and is become upwards reflection of edged surface, to produce the beam perpendicular to the chamber axle.The light that is reflected experiences the diffraction at full Inner reflecting surface place, and disperses when coating is upwards advanced on by laser.The partial reflection top surface of light bump laser, some light is launched, and remaining light is towards becoming angle plane to back reflective.The light that returns further disperses, and the feasible only part of this light is coupled back the optical cavity or the waveguide of laser with guided mode.This has reduced the efficient of laser.
In a kind of preferred versions of the present invention, this surface emitting or receiving photonic device combine lens, and lens form or are deposited on on the surface on the angle plane, to overcome the light effect weakening in the aforementioned cavities.These lens can be dielectric substances, for example are deposited on the hole and form to disperse to compensate this.
In various embodiments of the present invention, the one-tenth edged surface of surface emitting or receiving photonic device is that angle is approximately 45 ° full Inner reflecting surface, to produce the Vertical Launch bundle or to receive the light that substantially vertically impinges upon on the top device surface.
The invention provides a kind of surface emitting photonic device, comprising: substrate; Be placed in the optical delivery semiconductor medium of described on-chip epitaxial deposition, described medium combines the active region that is used to generate laser; At least one be placed on the described medium, perpendicular to first etching face of described substrate; At least one be placed on the described medium, with at angle second of described substrate; And be placed in lip-deep lens on described second, described medium, wherein, described second face is internal reflection, and become the angle so that the light that generates in the described active region can be basically perpendicular on the direction of described substrate launches, and described surface emitting photonic device comprises also and is used for the filter that the light to described emission filters on the described medium.
Description of drawings
When reading the detailed description of following preferred embodiment in conjunction with the accompanying drawings, those skilled in the art can know aforementioned and other purpose, feature and advantage of the present invention, in the accompanying drawing:
Fig. 1 is the top perspective view according to first embodiment of surface emitting laser of the present invention;
Fig. 2 is the end view of the laser of Fig. 1;
Fig. 3 is the vertical view of the laser of Fig. 1;
Fig. 4 is the end view according to second embodiment of surface emitting laser of the present invention;
Fig. 5 is the end view according to the 3rd embodiment of surface emitting laser of the present invention;
Fig. 6 is the end view according to the 4th embodiment of surface emitting laser of the present invention;
Fig. 7 is the top perspective view according to the 5th embodiment of surface emitting laser of the present invention;
Fig. 8 is the vertical view that combines the sixth embodiment of the present invention of surface emitting laser and area detector;
Fig. 9 is the side elevation in partial section of laser and the area detector of Fig. 8;
Figure 10 is the top view that combines the seventh embodiment of the present invention of surface emitting laser and plane internal detector;
Figure 11 is the side elevation in partial section of laser and the plane internal detector of Figure 10;
Figure 12 is the top perspective view that combines the eighth embodiment of the present invention of a plurality of surface emitting lasers according to the present invention;
Figure 13 is the zoomed-in view in surface emitting district of a plurality of lasers of Figure 12;
Figure 14 is for improving the top view of the laser that packaging density settles;
Figure 15 (a) and 15 (b) are the cross-sectional views of having demonstrated owing to surface emitting of dispersing the mode mismatch that causes or receiving photonic device;
Figure 16 is the diagram of effect of the mode mismatch of Figure 15 (a) and 15 (b);
Figure 17 combines the surface emitting of top surface lens or the cross-sectional view of receiving photonic device;
Figure 18 is the diagram of effect of the angle of the full Inner reflecting surface in the device that changes among Figure 15 (a) and 15 (b);
Figure 19 is the diagram of modal reflectivity of various radiuses of silicon lens that is used for the device of Figure 17;
Figure 20 is the diagram of modal reflectivity of various radiuses of InP lens that is used for the device of Figure 17; And
Figure 21 is the cross-sectional view of device that combines Figure 17 of dielectric layer.
Embodiment
Turn to more detailed description of the present invention now, in Fig. 1-3, illustrate the surface-emitting semiconductor layer of on substrate 12, making 10.Although will describe the present invention, be appreciated that and utilize feature of the present invention described herein to make the laser of other type according to ridge laser.
As make in the solid state ridge laser routinely, substrate 12 can for example be formed by III-V compounds or its alloy, and it can suitably be mixed.Substrate comprises top surface 14, on it as by having deposited such as mocvd (MOCVD) or molecular beam epitaxy homepitaxy at a succession of layer shown in 16 places, they have formed the optical cavity 18 that comprises active region 20.Such as optical cavity 18 semiconductor laser structures such as horizontal cavity such as grade comprise usually upper and lower coated areas 19 and 19 ', they are to be formed by the semi-conducting material that has the index lower than adjacent active region 20 such as InP etc.This zone 20 can be used based on the quantum well of InAiGaAs and battery and form.The transition zone of InGaAsP forms on the top surface of coated areas 18.
By mask and etch processes, 18 first (reflector) end, 24 places are formed into edged surface 22 in the chamber, in this is handled, preferably with at 45 with surface 14 or near the down and inside etching face of 45 ° angle.This face becomes the angle, so that the light that generates in the optical cavity can be basically perpendicular to or near launching on the direction perpendicular to the plane of active region 20 and surface 14.Emitter end facet 22 mainly is full Inner reflection, makes the light of propagating along the longitudinal axis of optical cavity 18 reflect on the direction perpendicular to this, and advances vertically upward on the direction of arrow 26 as shown in the figure thus.
, form end face 30 to become 90 ° angle with the longitudinal axis of optical cavity, and therefore be basically perpendicular to the active region 20 of laser at second (reflection) end of the optical cavity shown in 28 places generally.In addition, form distributed Bragg reflector (DBR) element 32 and monitor photoelectric detector (MPD) 34 at end 28 places, face 30 and element 32 and 34 are by mask and etching form in known manner.At the ridge 36 of deriving between emitter terminals 24 and the reflection end 28 is to form to form ridge laser 10 by the optical cavity 18 in mask and the etch activity district 20.In emitter terminals 24, ridge 36 is widened as at limit 38 and 40 places or outwards is tapered, and so that the open area 41 on the face 22 to be provided, does not have to absorb by top surface 42 formation of optical cavity 18 to allow bundle 26.
The rear portion of MPD part 34 (seeing it is left end from Fig. 1-3) is etched to form actinal surface 44.Perpendicular to the material of 45 pairs of manufacturing lasers 10 of line on the surface of face 44,, make the light that generates in 44 pairs of chambeies 18 of face have zero or the reflectivity of near-zero with Brewster's angle or near the longitudinal axis angulation 46 (Fig. 3) of Brewster's angle and optical cavity 18.Generate in the optical cavity 18 and some laser of longitudinal propagation in the emission of face 30 places, pass Bragg reflector 32, and receive by the MPD 34 of the work of monitoring laser device.The part of this light arrives face 44, but since its be zero or the reflectivity of near-zero dissipate at this face place, this prevents laser unwanted to back reflective.
Top electric contacting layer 48 on the top surface 42 of ridge 36 normally allows to form with the metal level that puts on it low bandgap semiconductor of ohm contact, such as InGaAs.Transition zone 21 normally has the semiconductor of the band gap between the band gap of the band gap that is in coating 19 and contact layer 48, and can have variable band gap in some cases.Contact layer and transition zone can absorb the light that generates in the laser.For example, be the laser of 1310nm if having the optical cavity 18 generation wavelength of above-mentioned material, then InGaAs contact layer 48 will upwards absorb this light after the reflection from the full Inner reflecting surface of 45 ° shown in 22 at it.In addition, if the band gap of InGaAsP transition zone 21 less than about 0.95eV, this is corresponding to the wavelength of 1310nm, then transition zone also will cause absorbing.Therefore, removing any absorbed layer is important for the effective of laser and work reliably.According to the first embodiment of the present invention, as shown in Figure 1, this realizes by the hole is provided.On the other hand, be GaAs if optical maser wavelength is 980nm and contact layer, then need not to remove the GaAs contact layer, because it is transparent at this wavelength place, if but optical maser wavelength is 830nm, then need to remove the GaAs contact layer.Form hole 52 by pattern formation and etch processes in contact layer 48, its opening is positioned at open area 41 places of the ridge at emitter terminals part 34 places.This hole allows light to launch from laser cavity as described above.Notice that light beam usually will be for circular or oval.
First electrode is deposited on the contact layer 48 of laser and MPD, and second electrode 54 is deposited on the basal surface 56 of substrate, makes that can apply bias voltage to the ridge between the electrode 36 produces laser.Also can apply zero or negative biasing, to allow it based on bump photogenerated electric current thereon to MPD.The laser of propagating in optical cavity 18 will be by face 22 reflections, and with in the vertical outgoing in first end, 24 places, as by shown in the arrow 26, and some light will pass through face 30 horizontal outgoing in the plane of active region 20 at second end, 28 places.Some light by face 30 outgoing will be by DBR reflector 32 back reflections in optical cavity, and some will pass the front surface 58 that reflector 32 removes to clash into MPD34, and it will be detected there.The light that passes MPD will dissipate at the rear portion of MPD quilt cover 44, as by shown in the arrow 60 (Fig. 3).The MPD 34 of monolithic manufacturing is not limited to the work of monitoring laser device, as by when needed by measuring its intensity in this structure, MPD also can be used as extremely fast detector to provide feedback to the circuit that drives this laser.
Laser cavity can be optimized by using the reflectivity change coating.In the cleaved-facet lasers of routine, a face can have highly reflective coatint, and another side can be added coating to antiradar reflectivity, for example is respectively 90% and 10% reflectivity, makes most of laser form from the antiradar reflectivity face.In short cavity, two kinds of faces all can have high reflectance, and to reduce the chamber trip loss, still a common mask has than another lower reflectivity, for example be respectively 99.9% and 99.0% specified reflectivity, to allow most of laser from forming than the antiradar reflectivity face.In the second embodiment of the present invention, as shown in Figure 4, laser 10 is made in the above described manner, and its common element has identical reference number.Yet, in this case, on the open area 41 at the first end place of ridge 36, deposited dielectric layer or piled 70, make it can change the reflectivity that institute's emitted light beams 26 is experienced.In addition, as shown in Figure 5, the face 30 of the reflector end 28 of optical cavity 18 can or pile 72 but not Bragg reflector 32 in conjunction with optical layers.Using very at the very two ends of short optical cavity that are lower than about 5 μ m, the coating of high reflectance can produce the single mode behavior owing to the big longitudinal mode spacing of very short optical cavity.Can use and change the performance that reflectivity is optimized laser cavity.
Substitute and to make the rear end face 30 of laser cavity 18 become vertical plane, but this face can come etching with the angles of about 45 degree as shown in Figure 6.In the figure, the laser cavity 80 of Zhi Zaoing is etched at two ends as mentioned above, to be provided as edged surface 82 and 84.The laser of this type provides horizontal surface for the reflectance coating 86 and 88 of the correspondence that forms respectively on hole 90 and 92.Shown structure can be in the back 84 and front 82 on launch light simultaneously perpendicular to substrate, wherein provide the hole to avoid the absorption in contact layer and transition zone.
In many application, single longitudinal mode laser more closes needs than Multi-Longitudinal Mode laser.Such application is data communication, wherein compares with Multi-Longitudinal Mode laser, can obtain longer communication coverage area with single longitudinal mode laser.Fig. 7 shows one embodiment of the present of invention, has wherein made single longitudinal mode surface-emitting semiconductor laser 100 on the top surface 112 of substrate 114.Described for laser 10 as mentioned, a succession of layer 116 has formed the optical cavity 118 that comprises the active region (not shown) of making as mentioned above.By with 112 angles at 45, surface or near the downward and inside mask of 45 be etched in first end, 120 places and formed and become edged surface 122.This face is full Inner reflection substantially, makes light launch vertical substantially or subvertical output beam 126.At second end 128 of optical cavity,, formed a plurality of filter elements 132, distributed Bragg reflector (DBR) element 134 and monitored photoelectric detector (MPD) 136 along the optical axis of optical cavity 118 by mask and etching.Form the ridge 140 that elongates by mask and etching process from optical cavity 118.
In the emitter terminals 120 of laser, ridge 140 is elongated or outwards is tapered, and as by shown in sidewall 142 and 144, to form open area 145, not have absorption to allow light beam 1256 by the surface emitting of first end, as described for Fig. 1.At second end 128, the rear portion of etching MPD part 136, to form actinal surface 146, this exit face is designed to laser material formation Brewster's angle or near Brewster's angle, to have the reflectivity of zero or near-zero.After passing filter element 132 and DBR element 134, some laser that generate in the optical cavity 118 are received by MPD 136, and MPD 136 provides the measurement to laser works then.Any light of arrival face 146 reflectivity zero owing to it or near-zero is dissipated, to prevent from not conform to the back reflection of laser needs.
After above-mentioned etching step, forming as above for the described first electric contacting layer (not shown) of Fig. 1 on the top surface of ridge and on the MPD, and forming pattern, so that opening 148 to be provided in the contact layer in open area 145 at this layer.This opening is positioned on the face 122 of end parts 120, with the light of permitting generating in the laser cavity as light beam 126 with circle or elliptical radiation.
The second dielectric layer (not shown) is deposited on the basal surface of substrate, makes that can apply bias voltage to ridge produces laser, and can to MPD apply zero or negative bias to allow it based on bump photogenerated electric current thereon.The laser that so produces in the optical cavity is in the vertical outgoing in first end, 120 places, as indicated by arrow 126, and in the vertical outgoing in second end, 128 places, some of them light transmits by face 130, by filter 134, and by DBR element 134, and on the front end 150 of MPD, clash into, to detect by MPD and to dissipate at 146 places, back of MPD then.
As the situation of the device of Fig. 1-3, the single longitudinal mode devices of Fig. 7 can have the dielectric layer (not shown) that is deposited on first emitter terminals, 120 places of ridge in mode shown in Figure 4, makes it can change the reflectivity of emitter terminals.
Although single DBR element 32 and 134 have been shown in the embodiment of Fig. 1 and 7 respectively, are appreciated that and also can use a plurality of DBR elements to obtain higher reflectivity at second end 28 and 128 places respectively.The DBR element can adopt the form of the element 32 among Fig. 1, and wherein DBR is not formed pattern in the ridge etch device, and it does not obtain the ridge structure as a result; Perhaps the DBR element can adopt the form of the element 134 among Fig. 5, and wherein this element comprises the ridged shape.In addition, be appreciated that the DBR element can with dielectric reflectivity change layer or the heap replace.
In modern system, be desirably in very much the optical transmitting set and the photodetector that have on single substrate or the chip side by side.If device is made with same material, it will be more desirable then having such combination.Therefore, in the embodiments of the invention shown in Fig. 8 and 9, surface emitting or Vertical Launch laser 158 (it can be the lasers such as laser 10 such as Fig. 1) is combined with detector 160, on common substrate such as substrate 12, to provide optical transmitting set and photodetector simultaneously such as Fig. 1.For purposes of illustration, surface emitting laser 158 is similar to the laser of Fig. 1, and public characteristic is endowed identical label, but can be clear, can use the variant of surface emitter.Fig. 9 is the cross-sectional view that the line 9-9 along Fig. 8 is got, so that the structure of detector 160 to be shown.For clarity sake, in Fig. 9, the height that detector is shown is less than laser, but this is not requirement.
As shown in the figure, area detector 160 is adjacent to settle with surface emitting laser 158, and from on-chiply making with one deck 16 with being deposited on, to form optical cavity.Detector is in mask and etching in these layers during the mask of second end 28 that is used to form laser and the etching step, and these steps comprise and form perpendicular end surface 30 (perpendicular to the active layer of laser), distributed Bragg reflector (DBR) element 32 and monitor photoelectric detector (MPD) 34.
In the another embodiment of the present invention shown in Figure 10 and 11, surface emitting laser 176 (being similar to the laser 10 of Fig. 1 for purposes of illustration) makes up with plane internal detector 180 on substrate 178.Given label similarly with the feature that the surface emitting laser 10 of Fig. 1-3 is common, Figure 11 is the cross-sectional view that the line 11-11 along Figure 10 is got.For clarity sake, the height of detector shown in Figure 11 is less than the height of laser 176.
Plane internal detector 180 is adjacent to settle with surface emitting laser 176, and generally is parallel to this laser.Detector 180 combines the main part 182 of elongation, and it has and is shown as the longitudinal axis parallel with the axle of the optical cavity 18 of laser 10; Yet, be appreciated that these need not to be parallel.Detector body is to use identical mask and etching step making from the sedimentary deposit 16 that wherein forms laser cavity.Form reflection input faces 184 at first (input) of detector end 186, this face 184 during formation face 22 on the laser 10 with the angle surperficial at 45 of substrate 178 or near the 45 etching.Main part 182 and back 188 form during being used to form second (reflector) end 28, perpendicular end surface 30, distributed Bragg reflector (DBR) element 32 and the mask that monitors photoelectric detector (MPD) 34 and the etching step of laser 176.Although detector back 188 is shown as the plane perpendicular to the active layer 20 of deposition materials, be appreciated that this face can come etching with other angle except that the right angle.
Plane internal detector 180 comprises the top surface area 200 that is used for receiving at identical active layer 20 places that use with laser the bump light beam 202 (Figure 11) that will detect.The top electricity is led the top surface that contact 204 puts on detector 180, wherein forms the hole in the contact in surveyed area 200, makes can not stop bump light.End electricity is led contact 208 puts on substrate 12 in detector region rear portion, and applies negative or zero offset between the top and bottom contact.Top surface in 200 enters detector to the light beam 202 that enters in the zone by it, and come axle portrait orientation along detector active layer 20 by interior reflective surface 184 reflections, as by shown in the arrow 210, for detecting in a known manner.
The reflectivity of zone 166 (Fig. 8) and 200 (Figure 10) can provide anti-reflecting surface to change to be respectively the light beam 164 and 202 that enters by dielectric layer deposition on these zones or heap.This allows the more effective collection of detector to light.
Be appreciated that such as above-mentioned a plurality of lasers and/or detector and can on single substrate, make, allow thus such as application such as directional light interconnection, wavelength selectivities with the form of array.For example, can on same chip or substrate, provide a plurality of lasers of the different wave lengths such as array 218 shown in Figure 12 and 13, and can settle they with its output directional to such as in the single output mediums such as optical fiber.Thus, laser array 218 can be configured to from have Fig. 7 100 shown in four lasers 220,222,224 of kind and 226 convenience center or axle 219 radially extend, these lasers are positioned on the common substrate 228 in the following manner: its output 230,232,234 and 236 is separately assembled each other very contiguously and around central shaft 240, and wherein second end of laser extends from this axial outer radial.From the output beam of laser perpendicular to or near perpendicular to the surface of substrate 228 and be parallel to emission vertically upward on the direction of axle 240.By providing different band gap to each of four lasers, each laser produces the output beam with different wave length, make array 218 edge axles 214 produce the output of the combination of selected wavelength or wavelength, these outputs can be directed to then such as public output devices such as optical fiber 242.Although show four lasers, be appreciated that this is for for the purpose of illustrating, and can use the laser of other quantity.The band gap of each laser can be by selecting such as processes such as impurity-free vacancy diffusion or regrowths, and these technology are well known in the art.
The output 230,232,234 of four lasers comprises into edged surface with each of 236, and these are in same masks, but form with four independent etching steps.Can be used for the offset from perpendicular guiding slightly of four light beams from the etched slight deflection of 45 in each etching step, make them impinge upon such as on the object of settling placed in the middle such as optical fiber 242 grades.The back of four lasers, filter element and MPD form by public mask and etching step.At last, as mentioned above, form ridge structure, and this device that metallizes is to provide electric contact on the top and bottom surface by mask and etching.
The radial arrays 218 of laser is possible, because the CAIBE process of using during the manufacturing laser provides the uniform etching that does not depend on the crystalline plane of semiconductor crystal.This permission comes the seating surface emitting laser with any desired structure on substrate, as shown in Figure 12 and further shown in Figure 14, wherein semiconductor layer 250 is placed on the rectangle substrate 252 diagonally.The conventional method of for example using splitting to form face does not allow such arrangement.
As mentioned above, the light 160 (I that in laser cavity 18, propagate
1) become edged surface 22 full Inner to reflect and upwards reflected, as schematically illustrated by the wave beam among Figure 15 (a) 262 and 264.The light of reflection experiences diffraction when coating is advanced on upwards by laser cavity, and wherein beam reflected 262 is dispersed in the manner illustrated.This light partly is launched, part in the zone in hole 52 from the top surface back reflection (see figure 1) of optical cavity, by the light that is reflected shown in light beam 266 and 268 downwards by on coating when advancing experience further disperse.The light that is returned is again from total internal reflection surface 22 reflections, but owing to dispersing that it experienced, only the part of this light is coupled echo as guided mode and leads 270 (I
2), remainder is lost as not guiding mould shown in 272.
Figure 15 (b) shows two-dimensional time-domain finite difference (FDTD) simulation 274 in the zone identical with the surface emitting laser structure shown in Figure 15 (a), and this is by providing such as the program that can buy on the markets such as program of http://www.rsoftdesigngroup.com/products/component_design/FullW AVE/ place acquisition.Shown dispersing when being coupled to waveguide cavity 18 can have harmful effect, as shown in the curve chart 280 of Figure 16.The vertical axis of this figure is to be normalized to 1 I
2With I
1Ratio,, I wherein
1Be the waveguide light 260 that impinges upon on the edged surface 22, I
2It is the light beam 270 of laser waveguide of being coupled back.Curve chart 280 shows when coating layer thickness increases, and this ratio descends.In many cases, last coating layer thickness must be a certain minimum thickness, to allow effective work of laser.Yet bad coupling meeting waveguide meeting causes the inefficient operation of laser.
According to the present invention, the effect of above-mentioned beam divergence can be by providing lens 282 to compensate on the top surface 284 of laser cavity 18.As shown in figure 17, lens are positioned in on the surface 284 on the edged surface 22, in the position in the hole 52 in for example during Fig. 1, and make with along to the identical path of face 22 to postbacking spreading beam 262 and 264, as by shown in Returning beam 286 and 288.These light beams that return are then from face 22 reflection, and axially are coupled in the chamber 18 as coupled light beam 270, thereby the efficiency of laser that improves is provided.
As an illustrated examples, can be such as 18 laser structures such as grade of the laser among Figure 17 based on the InP substrate, it has following coating and the last coating of InP, and the active layer that is about 0.25 μ m at the quantum well of InAlGaAs base, but at the contact layer that becomes the transition zone of having removed InGaASP on the edged surface and InGaAs to form the hole, as mentioned for Fig. 1 discussed.For the laser structure of this example, last coating is 1.375 μ m.The medium of laser outside is chosen as air.Modal reflectivity in the optical cavity 18 is defined in the axial propagates light 260 of bump on the face 22 and the ratio of the light 270 of edge axle back reflection; Be I
2With I
1Ratio, but this value also comprises the reflectivity that locate surperficial 284 (having or do not have lens), and this definition will be used in the following discussion.
Total internal reflection surface 22 is influential for modal reflectivity with the longitudinal axis angulation of laser.Curve chart 292 among Figure 18 show angle with total internal reflection surface 22 change into greater than with less than 45 ° the time to the influence of modal reflectivity.This curve chart carries out 2-d FDTD by the operation instruction laser and simulates and obtain.Being lower than 45 ° angle, to mean that this face more approaches etched perpendicular to substrate.This curve chart is illustrated in about 45.5 ° and obtains the peak value modal reflectivity.Simulation also shows by the beam-pointing that just forms laser shown in the arrow 26 and can compensate by the angle that changes face.
The optimization of dispersing offset lens is to use same illustrative laser structure to determine, the angle of its total internal reflection surface 22 is set as 45.5 °.Curve chart 294 among Figure 19 shows and uses 2-d FDTD simulation, the modal reflectivity that double cylindrical silicon lens 282 obtain with the radius that changes.This curve chart illustrates the lens for Si, and optimal modal reflectivity is at 3.75 μ m radius of curvature places.Similarly, the curve chart 296 of Figure 20 illustrates the lens to InP, and optimal modal reflectivity is at 3.25 μ m radius of curvature places.
Although described according to surface emitting laser and to have dispersed offset lens 282 and angle modification, be appreciated that identical solution can be applicable to other surface emitting and receiving device.In addition, although used the specific example of material and laser structure that embodiments of the invention are shown, be appreciated that and use other material and laser structure (for example, based on InP, GaAs and GaN other laser structure).
Be further appreciated that heap 70 isoreflectances change layer or heap shown in Fig. 4 can be positioned in the top of dispersing offset lens 282 with mode shown in Figure 21, and lens can use in conjunction with the various embodiment shown in Fig. 1-14.Thus, as shown in the figure, lens 282 can be made in hole 52, make or settle in addition heap 70 then on lens.In this way, perpendicular fasciculus 26 scioptics 282 and heap 70 are launched from device, and the light that is launched surface and reflection from lens is coupled in optical cavity 18 the axially light of propagation.
Although show the present invention, be appreciated that under the situation that does not break away from true spirit described in the appended claims and scope, to make to change and modification according to preferred embodiment.
Claims (14)
1. surface emitting photonic device comprises:
Substrate;
Be placed in the optical delivery semiconductor medium of described on-chip epitaxial deposition, described medium combines the active region that is used to generate laser;
At least one be placed on the described medium, perpendicular to first etching face of described substrate;
At least one be placed on the described medium, with at angle second of described substrate; And
Be placed in lip-deep lens described second top, described medium,
Wherein, described second face is internal reflection, and is become the angle so that the light that generates in the described active region can be launched being basically perpendicular on the direction of described substrate,
And described surface emitting photonic device also comprises and is used for the filter that the light to described emission filters on the described medium.
2. device as claimed in claim 1 is characterized in that, described second and described substrate angle at 45 or angle at 45 approximately.
3. device as claimed in claim 1 is characterized in that, described first etching face is partial reflection, and described device also comprises the supervision photoelectric detector that closes on described first etching face and axially align with described medium.
4. device as claimed in claim 3 is characterized in that, also comprises the distributed Bragg reflector that is placed between described first etching face and the described photoelectric detector.
5. device as claimed in claim 3 is characterized in that, also comprises a plurality of filters that are placed between described first etching face and the described photoelectric detector.
6. device as claimed in claim 1 is characterized in that, the surf zone detector that also is included on the described substrate and makes in described medium.
7. device as claimed in claim 1 is characterized in that, the plane internal detector that also is included on the described substrate and makes in described medium.
8. device as claimed in claim 7 is characterized in that, described detector comprises the arrival end that combines the one-tenth edged surface that is used to make the light deflection that strikes detector.
9. device as claimed in claim 8 is characterized in that, also comprises on the surface of described arrival end and the lens above the described one-tenth edged surface that is used to make the light deflection that strikes detector.
10. device as claimed in claim 1 is characterized in that, described optical delivery semiconductor medium comprises a plurality of layers on the top surface of described substrate, so that the active region that is basically parallel to described top surface to be provided.
11. device as claimed in claim 10 is characterized in that, also is included on the described medium and at described on-chip electrode, is used to receive bias voltage and activates the active region of described medium to generate the laser output bundle.
12. device as claimed in claim 11 is characterized in that, described medium is a ridge laser.
13. device as claimed in claim 10 is characterized in that, described medium is made forms the laser cavity of elongating, and described laser cavity has described first etching face at the first end place in chamber, and has described second at the second end place in chamber.
14. device as claimed in claim 10 is characterized in that, described medium is made the laser cavity that forms a plurality of elongations, its each have first end and second end, described second end is assembled with along common axis emission light.
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| US51218903P | 2003-10-20 | 2003-10-20 | |
| US60/512,189 | 2003-10-20 | ||
| US57828904P | 2004-06-10 | 2004-06-10 | |
| US60/578,289 | 2004-06-10 | ||
| PCT/US2004/032303 WO2005043697A2 (en) | 2003-10-20 | 2004-10-14 | Surface emitting and receiving photonic device with lens |
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| CN200480030764XA Active CN1871752B (en) | 2003-10-20 | 2004-10-14 | Surface emitting and receiving photonic device with lens |
| CN200910161176.4A Active CN101656397B (en) | 2003-10-20 | 2004-10-14 | Have lensed surface emitting and receiving photonic device |
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| CN110854666A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascade laser and manufacturing method thereof |
| CN115343690B (en) * | 2022-10-14 | 2023-02-07 | 北京摩尔芯光半导体技术有限公司 | Optical transceiver module and laser radar apparatus |
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| US5920587A (en) * | 1994-06-30 | 1999-07-06 | Sony Corporation | Optical device and method of manufacturing the same |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
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| US5282080A (en) * | 1991-12-09 | 1994-01-25 | Sdl, Inc. | Surface coupled optical amplifier |
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| US5920587A (en) * | 1994-06-30 | 1999-07-06 | Sony Corporation | Optical device and method of manufacturing the same |
| US6611544B1 (en) * | 2000-04-11 | 2003-08-26 | E20 Communications, Inc. | Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers |
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| CN101656397B (en) | 2017-07-28 |
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| CN1871753A (en) | 2006-11-29 |
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