CN1866465A - Growth process capable of increasing zb-CrSb thickness - Google Patents
Growth process capable of increasing zb-CrSb thickness Download PDFInfo
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- CN1866465A CN1866465A CN 200510072978 CN200510072978A CN1866465A CN 1866465 A CN1866465 A CN 1866465A CN 200510072978 CN200510072978 CN 200510072978 CN 200510072978 A CN200510072978 A CN 200510072978A CN 1866465 A CN1866465 A CN 1866465A
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Abstract
The invention discloses a molecular beam epitaxy growing method in the electronic device technology domain, which comprises the following parts: molecular beam epitaxy growing system, source stove temperature control system, five-element solid source (Ca, As, In, Cr, Sb), CaAs substrate, reflection high-energy electron diffraction gun and superconducting quantum conoscope (SQUID). The invention adopts molecular beam epitaxy growing method to prepare zb-CrSb sample, which detects basic magnetic nature and thickness of zb-CrSb through SQUID and saturated magnetic torque of zb-CrSb magnetic hysteresis cycle under extra-low temperature.
Description
Technical field
The present invention relates to the electronics device technical field, the growing method of zincblende lattce structure CrSb (zb-CrSb) half-metallic ferromagnet, the particularly growing method of increase zb-CrSb thickness.
Background technology
Because the electronics based on electron charge is about to reach its technological limit at present, the research that global scientist invests spintronics to the sight of electronics research one after another.The basic principle of spintronics is, by controlling the electronic spin direction or utilizing the electric charge of electronics and two degrees of freedom of spin to carry out information stores and processing simultaneously.Compare with traditional semiconductor device, that the spintronics device has is non-volatile, data processing speed is faster, reduce power loss and integration density advantages of higher.The key of making the spintronics device is to realize that effective spin polarized current injects semiconductor under the room temperature.If this key technology is solved, may cause a new revolution of electronics and information industry, market prospects are inestimable.
Effective spin polarized current injection semiconductor can be realized by half-metallic ferromagnet zb-CrSb under the room temperature, because the ferromagnetic transformation temperature of zb-CrSb reaches more than the 400K, its spin polarizability reaches 100%, and it can also be well compatible with existing III-V semiconductor simultaneously.But the thickness of zb-CrSb can only reach～1nm so far, and this has seriously limited its application.Theoretical research shows that lattice mismatch is the key reason that can't obtain thicker zb-CrSb.
Prepare thicker zb-CrSb, the selection of resilient coating is crucial in the growth course.Up to now, zb-CrSb utilizes the low temperature molecular beam epitaxy technology growth on the GaAs substrate, owing to have big lattice mismatch between GaAs and the zb-CrSb, causes the thickness of zb-CrSb can only reach～1nm, surpasses this thickness and will form second phase.
Summary of the invention
The object of the invention provides a kind of growing method of the zb-CrSb of increasing thickness, does not need to increase other supplementary technology, has advantage simple, convenient and that easily realize.
A kind of InGaAs of utilization increases the molecular beam epitaxy accretion method of half-metallic ferromagnet zincblende lattce structure antimony chromium (zb-CrSb) thickness as resilient coating, comprise the molecular beam epitaxial growth system, source oven temperature degree control system, the element solid source, the GaAs substrate, reflection examination high-energy electron diffiraction rifle (RHEED), superconducting quantum interference device (SQUID) (SQUID), utilize molecular beam epitaxy system growing and preparing zb-CrSb sample, measure the basic magnetic matter of zb-CrSb by SQUID, the magnetic hysteresis loop of zb-CrSb obtains saturation magnetic moment under the utmost point low temperature, and calculates the thickness of zb-CrSb thus.
Described growing method adopts the molecular beam epitaxy technique InGaAs resilient coating of growing on the GaAs substrate.
Described growing method utilizes the low temperature molecular beam epitaxy technology at InGaAs buffer growth zb-CrSb sample, reaches the purpose that increases zb-CrSb thickness.
Described growing method is used the RHEED monitoring growth, guarantees that the CrSb compound that obtains is a zincblende lattce structure.
Described growing method, the magnetic hysteresis loop of zb-CrSb obtains saturation magnetic moment under the utmost point low temperature, and calculates the thickness of zb-CrSb thus.
The element solid source comprises: Ga, As, In, Cr, Sb.
Utilize InGaAs to improve the growing method of the thickness of the half-metallic ferromagnet CrSb with zincblende lattce structure, it is characterized in that, comprise the steps: as resilient coating
Step 1: utilize the molecular beam epitaxy technique GaAs resilient coating of on the GaAs substrate, growing;
Step 2: utilize the molecular beam epitaxy technique InGaAs resilient coating of on the GaAs resilient coating, growing;
Step 3: utilize the low temperature molecular beam epitaxy technology zb-CrSb that on the InGaAs resilient coating, grows;
Step 4: utilize superconducting quantum interference device (SQUID) (SQUID) measure zb-CrSb at low temperatures (～5K) and the magnetic hysteresis loop of room temperature above (300K), calculate the thickness of zb-CrSb with the saturation magnetic moment that obtains under the low temperature.
The invention has the beneficial effects as follows: only need utilize InGaAs just can improve the thickness of zb-CrSb as resilient coating, not needing increases other supplementary technology, has simple, convenient, the easy advantage of realization.
Description of drawings
Below in conjunction with accompanying drawing, by detailed description technical scheme of the present invention is described further instantiation, wherein:
Fig. 1 is the zb-CrSb sample structure schematic diagram that utilizes the molecular beam epitaxy technique preparation;
Fig. 2 is the magnetic hysteresis loop figure of zb-CrSb sample when 5K and 300K;
One of Fig. 3 has near the enlarged drawing of the magnetic hysteresis loop of CrSb sample when 5K and 300K zero magnetic field of zincblende lattce structure.
Embodiment
We have utilized molecular beam epitaxy technique growing and preparing zb-CrSb sample, its structure is seen accompanying drawing 1.At first come the smooth substrate surface at the GaAs resilient coating that is about 100nm through growth thickness on the Semi-insulating GaAs substrate of cleaning, degasification and deoxidation, growth temperature is 580 ℃.Then underlayer temperature is reduced to 520 ℃, the InGaAs resilient coating about about 400nm of growing.Utilize low temperature molecular beam epitaxy technology growth one deck zb-CrSb at last, growth temperature is 250 ℃.Whole growth process is used reflected high energy electron diffraction in-situ monitoring growth interface forward position, is zincblende lattce structure with the CrSb compound that guarantees growing and preparing.Utilize SQUID to measure the basic magnetic matter of zb-CrSb.
Fig. 2 has provided the magnetic hysteresis loop of zb-CrSb when temperature is 300K and 5K, and the magnetic hysteresis loop explanation zb-CrSb sample ferromagnetic transformation temperature that shape was intact when temperature was 300K reaches more than the room temperature.Saturation magnetic moment when temperature is 5K can calculate the zb-CrSb sample thickness and reach～3nm, be far longer than the zb-CrSb sample thickness that obtains with the GaAs resilient coating (～1nm).
The illustration of Fig. 3 is near the enlarged drawing of magnetic hysteresis loop zero magnetic field, and magnetic hysteresis loop is very obvious in the time of can seeing 300K, further specifies the zb-CrSb that obtains and has the above ferromagnetism of room temperature.
These experimental results show, utilize this growing method can improve the thickness of zb-CrSb.
Characteristic of the present invention: only need to use the InGaAs resilient coating, just can improve the thickness of zb-CrSb.Do not need to increase other supplementary technology, simple, convenient, easily realization.
The method that can realize the foregoing invention purpose comprises a molecular beam epitaxial growth system, source oven temperature degree control system, five kinds of element solid sources (comprising Ga, As, In, Cr, Sb), GaAs substrate, reflected high energy electron diffraction rifle, SQUID measuring system.
A kind of growing method of utilizing InGaAs the thickness of resilient coating raising zb-CrSb of the present invention comprises the steps:
Step 1: utilize the molecular beam epitaxy technique GaAs resilient coating of on the GaAs substrate, growing;
Step 2: utilize the molecular beam epitaxy technique InGaAs resilient coating of on the GaAs resilient coating, growing;
Step 3: utilize the low temperature molecular beam epitaxy technology on the InGaAs resilient coating, to grow and have zb-CrSb;
Step 4: utilize superconducting quantum interference device (SQUID) (SQUID) measure zb-CrSb at low temperatures (～5K) and the magnetic hysteresis loop of room temperature above (300K), can estimate the thickness of zb-CrSb with the saturation magnetic moment that obtains under the low temperature.
Measurement shows that the ferromagnetic transformation temperature of the zb-CrSb that grows reaches more than the 300K on the InGaAs resilient coating; Calculate to find big many of the thickness of the zb-CrSb that the thickness at the zb-CrSb that grows on the InGaAs resilient coating obtains than growing on the GaAs resilient coating.
Claims (7)
1. molecular beam epitaxy accretion method that utilizes InGaAs to increase half-metallic ferromagnet zincblende lattce structure antimony chromium thickness as resilient coating, comprise molecular beam epitaxial growth system, source oven temperature degree control system, element solid source, GaAs substrate, reflection examination high-energy electron diffiraction rifle, superconducting quantum interference device (SQUID), utilize molecular beam epitaxy system growing and preparing zb-CrSb sample, measure the basic magnetic matter of zb-CrSb by SQUID, the magnetic hysteresis loop of zb-CrSb obtains saturation magnetic moment under the utmost point low temperature, and calculates the thickness of zb-CrSb thus.
2. growing method according to claim 1 is characterized in that, adopts the molecular beam epitaxy technique InGaAs resilient coating of growing on the GaAs substrate.
3. growing method according to claim 1 is characterized in that, utilizes the low temperature molecular beam epitaxy technology at InGaAs buffer growth zb-CrSb sample, reaches the purpose that increases zb-CrSb thickness.
4. growing method according to claim 1 is characterized in that, uses the RHEED monitoring growth, guarantees that the CrSb compound that obtains is a zincblende lattce structure.
5. growing method according to claim 1 is characterized in that, the magnetic hysteresis loop of zb-CrSb obtains saturation magnetic moment under the utmost point low temperature, and calculates the thickness of zb-CrSb thus.
6. growing method according to claim 1, its step is as follows:
Step 1: utilize the molecular beam epitaxy technique GaAs resilient coating of on the GaAs substrate, growing;
Step 2: utilize the molecular beam epitaxy technique InGaAs resilient coating of on the GaAs resilient coating, growing;
Step 3: utilize the low temperature molecular beam epitaxy technology zb-CrSb that on the InGaAs resilient coating, grows;
Step 4: utilize superconducting quantum interference device (SQUID) measure zb-CrSb at low temperatures with magnetic hysteresis loop more than the room temperature, calculate the thickness of zb-CrSb with the saturation magnetic moment that obtains under the low temperature.
7. growing method according to claim 1 is characterized in that, the element solid source comprises: Ga, As, In, Cr, Sb.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB200510072978XA CN100355017C (en) | 2005-05-16 | 2005-05-16 | Growth process capable of increasing zb-CrSb thickness |
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| CNB200510072978XA CN100355017C (en) | 2005-05-16 | 2005-05-16 | Growth process capable of increasing zb-CrSb thickness |
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| CN1866465A true CN1866465A (en) | 2006-11-22 |
| CN100355017C CN100355017C (en) | 2007-12-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332304A (en) * | 2014-10-17 | 2015-02-04 | 中国科学院半导体研究所 | Method for obtaining room-temperature ferromagnetic (Ga, Mn) As thin film with thickness of more than 10nm |
| CN107344868A (en) * | 2016-05-06 | 2017-11-14 | 山东大学 | A kind of method for the single-layer graphene for preparing no cushion on sic substrates |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256154A (en) * | 1997-03-06 | 1998-09-25 | Mitsubishi Electric Corp | Semiconductor hetero-structure, manufacture thereof and semiconductor device |
| US6861342B2 (en) * | 2001-06-22 | 2005-03-01 | Tohoku University | Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure |
| CN1216401C (en) * | 2002-09-19 | 2005-08-24 | 中国科学院半导体研究所 | Method for preparing low temp. ultrathin heteroepitaxial flexible substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332304A (en) * | 2014-10-17 | 2015-02-04 | 中国科学院半导体研究所 | Method for obtaining room-temperature ferromagnetic (Ga, Mn) As thin film with thickness of more than 10nm |
| CN107344868A (en) * | 2016-05-06 | 2017-11-14 | 山东大学 | A kind of method for the single-layer graphene for preparing no cushion on sic substrates |
| CN107344868B (en) * | 2016-05-06 | 2019-08-27 | 山东大学 | A method of preparing the single-layer graphene of no buffer layer on sic substrates |
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