CN1858002A - Mercury-indium-tellurium-antimoy compound and its single crystal material and thin film material - Google Patents
Mercury-indium-tellurium-antimoy compound and its single crystal material and thin film material Download PDFInfo
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- CN1858002A CN1858002A CN 200510067199 CN200510067199A CN1858002A CN 1858002 A CN1858002 A CN 1858002A CN 200510067199 CN200510067199 CN 200510067199 CN 200510067199 A CN200510067199 A CN 200510067199A CN 1858002 A CN1858002 A CN 1858002A
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Abstract
The present invention relates to a new kind of infrared material, and is especially Hg-In-Te-Sb compound and its monocrystal material and film material. The compound is prepared with HgTe and InSb as material and through vacuum high temperature solid synthesis. The monocrystal growth temperature is 550-650 deg.c and the crucible descending speed is controlled in 10-50 mm/hr. The film material is prepared through molecular beam epitaxy process. The Hg-In-Te-Sb compound and its monocrystal material and film material have band gap capable of being regulated in relatively wide range, stable structure, homogeneous components, simple preparation process, and performance comparable to MCT infrared material.
Description
The technical field is as follows:
the present invention relates to novel infrared materials.
Background art:
due to mercury cadmium telluride (i.e. Hg)1-xCdxTe, MCT for short) can vary with the composition x in an approximately linear relationship, and is used to fabricate infrared detectors operating in a particular spectral band. MCT materials have the following advantages: 1) MCT is a direct band gap type material, the service life of a photon-generated carrier is long, and the dark current is small, so that the MCT infrared detector has high performanceA detection rate; 2) the MCT material has larger optical coefficient, high absorption coefficient and quantum efficiency more than 80 percent; 3) the effective mass ratio of holes to electrons is about 100 and the electron mobility is high.
MCT materials, while having many unique advantages, also have their own drawbacks, mainly reflected by: 1) poor structural integrity and stability, and non-uniform composition; 2) the segregation coefficient of cadmium components is large. For MCT material, the corresponding forbidden band width changes by about 0.01eV every 1% of the mole number of cadmium telluride, so that the cut-off wavelength of the prepared infrared detector changes obviously. 3) It is difficult to prepare a long wavelength response infrared detection material because it requires a high mercury content in the MCT material, resulting in poor material stability and uniformity.
MCT materials have been developed over decades of research and development. Currently, it is one of the most important materials of photoelectric devices such as infrared detectors, photoelectric modulators, photodiodes, laser diodes, thin-film solar cells, glass optical fibers and the like. These devices have been widely used in information transmission, sensing, storage, remote sensing, and military applications.
The preparation of the MCT material in the early stage is mainly based on bulk single crystal, and the process method mainly comprises a Bridgman method, a tellurium solvent method, a semi-melting crystallization method, a moving heater method, a vapor phase growth method and the like. However, none of these processes overcomes the disadvantages of poor material stability and uniformity due to weak Hg-Te bonds in MCT materials. The film material growth method mainly includes liquid phase epitaxy, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, molecular beam epitaxy, etc. Wherein, the liquid phase epitaxy, the metal organic vapor deposition and the molecular beam epitaxy process are mature, and the obtained material has better performance. But the defects are serious, the process is complex, the material performance is greatly influenced by external factors and is sensitive, and the production cost is high.
Because of the inherent drawbacks of MCT materials, researchers have been looking for new materials with high performance to replace MCT materials. To date, many studies have been reported on this aspect, such as Hg1-xZnxTe、Hg1-xMnxTe、PbSnTe、PbSnSe, InAsSb, etc., but the comprehensive performance of the material can not exceed that of MCT material.
The invention content is as follows:
the invention aims to find a novel infrared material which has adjustable band gap in a wider range, stable structure, uniform components, relatively simple preparation process and performance comparable to MCT material.
Since the MCT material is a ternary compound formed by mercury telluride and cadmium telluride, its bandgap changes almost linearly with changes in the cadmium telluride composition. Based on the above, indium antimonide is adopted to replace cadmium telluride to form a similar quaternary compound mercury indium tellurium antimony material with mercury telluride, namely Hg1-xInxTe1-xSbx(x is more than 0 and less than 1). The single crystal diffraction result of the quaternary compound shows that the crystal structure of the quaternary compound is a sphalerite structure. The crystal structures of indium antimonide and mercury antimonide are heterogeneous isomorphism and belong to a zinc blende structure, the lattice constants are very close, so that tellurium atoms and antimony atoms between the mercury antimonide and the mercury atoms and the indium atoms between the mercury antimonide and the mercury atoms are mutually replaced at lattice positions to form an infrared material with better stability and uniformity, and meanwhile, the band gap of the mercury indium tellurium antimony material can also obtain different band gap widths by adjusting the proportion of compound components, namely changing the value x. Because the band gap of the indium antimonide is 0.18eV, the indium antimonide is smaller than cadmium telluride with the band gap of 1.50eV, the preparation of a narrow-band-gap infrared material and the regulation and control of the wide component of the material are facilitated, and the defect that the MCT material is caused by too large content of mercury element component can be overcomePoor stability and uniformity of the material.
The preparation process of the material is a vacuum medium-high temperature solid-phase synthesis method, which is used for preparing a quaternary compound of mercury indium tellurium antimony, growing a single crystal material of the quaternary compound by a Bridgman method, and preparing a mercury indium tellurium antimony film material by a molecular beam epitaxy method.
The novel mercury indium tellurium antimony material has the following advantages: the preparation process of the compound issimple; narrow bandgap semiconductor materials are easier to obtain by varying the value of x and x can be varied over a wide range; the reaction conditions are relatively mild, and particularly, the growth of bulk single crystals is more convenient and feasible; the material has stable structure, uniform components and performance equivalent to that of MCT material.
The specific implementation scheme is as follows:
1. synthesizing mercury indium tellurium antimony quaternary compound:
the mercury indium tellurium antimony quaternary compound is obtained by adopting a vacuum medium-high temperature solid phase synthesis method. The reaction formula is as follows:
the specific operation steps are as follows:
and (3) putting reactants with corresponding mass into a sealed vacuum glass tube, heating to 800 ℃ at the speed of 40-50 ℃/h, keeping the temperature for 72-144 hours, cooling to 100 ℃ at the speed of 2-5 ℃/h, and finally turning off the power supply. The glass tube is taken out, and the target compound with block microcrystalline state can be obtained.
2. Growing a single crystal:
seed crystals are added into the crucible, and Hg is added1-xInxTe1-xSbxThe quaternary compound briquette is placed on the seed crystal in the crucible, then the crucible is placed in a single crystal furnace to melt Hg1-xInxTe1-xSbxPlacing the quaternary compound and the seed crystal at the top of a single crystal furnace, and controlling the descending speed of a crucible to be 10-50 mm/h at the temperature of 550-650 ℃,so that Hg with a flat and smooth surface and without macroscopic and microscopic defects can be grown1-xInxTe1-xSbxA single crystal.
3. Growing the mercury indium tellurium antimony thin film material:
the growth of the mercury indium tellurium antimony thin film material is completed by adopting a molecular beam epitaxy method.
The specific process comprises the following steps: the molecular beam epitaxy method comprises the following steps: in a Riber32P system, three raw materials of Hg, Te and InSb are heated to 170-220 ℃ through a beam source furnace, then the temperature is constant, then the raw materials are evaporated into atomic beams or molecular beams, and then the atomic beams or the molecular beams are deposited on a substrate made of a CdZnTe material to grow a Hg, in, Te and Sb thin film material, the components can be obtained by adjusting the mutual proportion of the evaporation of the three raw materials, and the thickness of the thin film can be adjusted according to requirements.
Claims (8)
1. A method for synthesizing mercury indium tellurium antimony quaternary compound is characterized by comprising the following steps: HgTe and InSb are used as raw materials, and a vacuum medium-high temperature solid phase synthesis method is adopted.
2. The method of synthesis of claim 1, wherein: the vacuum medium-high temperature solid phase synthesis method comprises the steps of raising the temperature to 300-800 ℃ at the speed of 40-50 ℃/h, keeping the temperature for 72-144 hours, and then lowering the temperature to 100 ℃ at the speed of 2-5 ℃/h.
3. The mercury indium tellurium antimony quaternary compound prepared by the synthesis method of claim 1 or 2, wherein the crystal structure is a sphalerite structure.
4. A preparation method of mercury indium tellurium antimony single crystal is characterized by comprising the following steps: the growth temperature is 550-650 ℃, and the descending speed of the crucible is controlled to be 10-50 mm/h.
5. A Hg-in-Te-Sb monocrystal grown by the method according to claim 4.
6. A growth method of a mercury indium tellurium antimony thin film material is characterized by comprising the following steps: and growing by adopting a molecular beam epitaxy method.
7. A growing method according to claim 6, wherein: the molecular beam epitaxy method comprises the steps of heating Hg, Te and InSb to 170-220 ℃ through a beam source furnace, keeping the temperature constant, evaporating the raw materials into atomic beams or molecular beams, and depositing the atomic beams or the molecular beams on a substrate made of a CdZnTe material for growth.
8. An indium tellurium antimony mercurial thin film material prepared by the growth method of claim 6 or 7.
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| CN 200510067199 CN1858002A (en) | 2005-05-01 | 2005-05-01 | Mercury-indium-tellurium-antimoy compound and its single crystal material and thin film material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103343389A (en) * | 2013-07-05 | 2013-10-09 | 上海大学 | Preparation method for CdZnTe film with cylindrical structure |
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Open date: 20061108 |