CN1856931A - Methods and apparatus based on coplanar striplines - Google Patents

Abstract

Methods and apparatus for implementing various coplanar stripline (CPS) configurations, including standing wave oscillators (SWOs) using coplanar striplines (CPS). One example is given by a quarter-wavelength (lambda/4) coplanar stripline standing wave oscillator (SWO), while another implementation utilizes a closed-loop coplanar stripline configuration. In various aspects, SWOs are configured to optimize sinusoidal performance at high frequencies with low power dissipation by incorporating various features that dramatically increase the quality factor Q of the oscillator. In particular, in one aspect, an amplitude-dependent tailored distributed amplification scheme is employed as a mode control technique using multiple amplifiers having different gains along the length of the coplanar stripline. In another aspect, a coplanar stripline configured such that its resistance per unit length R and conductance per unit length G are discreet or continuous functions of position along the coplanar stripline is employed to reduce SWO losses. In another aspect, an enhancement of the quality factor Q is achieved while at the same time reducing the phase velocity of waves propagating in the SWO, thereby also facilitating the fabrication of relatively smaller devices. In yet another aspect, SWOs are configured with frequency adjustability that is again optimized to reduce power dissipation while facilitating significant adjustments of oscillator frequency.

Description

Method and apparatus based on coplanar striplines

Priority

Present patent application requires on July 23rd, 2003 submitting to, exercise question is the U.S. Provisional Patent Application sequence number No.60/489 of " Methods andApparatus for Implementing Standing Wave SinusoidalOscillators (being used to realize the standing wave sinusoidal oscillator) ", on January 2nd, 708 and 2004 submitted to, exercise question is the U.S. Provisional Patent Application sequence number No.60/533 of " Methods andApparatus for Implementing Standing Wave SinusoidalOscillators (being used to realize the standing wave sinusoidal oscillator) ", 904 priority.

Invention field

The present invention relates generally to the whole bag of tricks and the equipment that involves based on the semiconductor device of coplanar striplines (CPS).In some exemplary embodiment, sine signal source (more specifically, standing wave sinusoidal oscillator) is based on the coplanar striplines structure and is effective.

Background

Use (such as cell phone, wireless network, satellite broadcasting and optical fiber communication) now and depend on electronics and relevant technology in raising speed with reduce continuous progress aspect the volume as the modern communications of the conventional part of daily life; Promptly improve information transfer rate and carry out integrated circuit the miniaturization various and function associated of communicating by letter with making.Yet along with higher frequency in the scope of tens GHz and the miniaturization that is tending towards the integrated circuit of atomic scale are used in the system designer expectation, the many aspects of traditional integrated circuit technique constantly become and can not use and go out of use.Therefore, common design challenge involves searching implements to be used for the circuits built piece of knowing of quicker operation in littler space new method.In some example, such embodiment can be utilized based on electromagnetic notion, and involves transmission line or the waveguiding structure of making on semiconductor chip.

Transmission line theory is known technically.In general, transmission line provide a kind of can mat its with the mode delivering power of being guided or the means (for example connecting signal source) of information to load.Transmission line typically comprises by separated two parallel conductors of dielectric substance.As electromagnetic wave propagation, and propagate by the various physical parameters relevant with transmission line and the parameter influence ripple relevant with any load on line with the source of on line signal along given transmission line for signal.

Fig. 1 a-1e shows the typical example of transmission line, and it comprises coaxial cable (Fig. 1 a), two-wire line (Fig. 1 b), parallel flat or planar line (Fig. 1 c), the line on the conducting surface (Fig. 1 d), and microstrip line (Fig. 1 e).In addition, it should be noted that each example in the middle of these examples is made up of two parallel conductors.Coaxial cable is used for interconnected various electric equipment (for example, connecting television set to television antenna or cable TV feed) usually in electric laboratory and several common consumer application.Microstrip line is a particular importance in the integrated circuit based on various semiconductor fabrications, and the parallel metal band of wherein making on dielectric substrates (that is, being separated by dielectric) connects electronic component.

Transmission line usually is looked at as the special situation of wider " waveguide " classification.Waveguide relates generally to and is configured to electromagnetic radiation is directed into the system of another point from a bit.Yet in several common application, waveguide more specifically is looked at as the conduit (conduit) on border, and by this conduit, electromagnetic radiation is to propagate compared with the more restricted slightly mode of considering in conjunction with transmission line usually.For example, in microwave regime, unlike the two-conductor transmission line, waveguide can be formed hollow metallic conduit, and its cross section can be rectangle, ellipse or circular.At the complete unsupported optical field of transmission line, waveguide usually is formed solid dielectric silk (for example, optical fiber), perhaps is formed being the thin dielectric film of boundary than the low-refraction environment.

As traditionally in many application handled, transmission line usually is characterized as being what are different in some importance and wider waveguide classification.For example, at first, transmission line can be configured to operate at usually from DC (frequency f=0) to very high frequency (for example, at millimeter wave and microwave range, from about 1GHz to 100GHz) scope in; Yet waveguide can only be concrete structure and above work of certain frequency (" cut-off frequency ") determined of size by it, so generally be used as high pass filter.On the other hand, on the frequency of the higher order of magnitude of 300GHz, transmission line is traditionally because the skin effect known in transmission line conductors and the dielectric loss relevant with the material of separating conductor and be looked at as poor efficiency usually at about 50GHz; On the contrary, waveguide obtains bigger bandwidth and lower signal attenuation (that is, have than the relative broad range of low signal power loss frequency response) being looked at as traditionally in this frequency range.Yet, in the low side of this frequency range and following frequency, waveguide be considered to traditionally for some use (particularly for wherein typically constantly miniaturization be that the integrated circuit of target is used) be excessive dimensionally.Another difference between transmission line and the waveguide is, transmission line can only be supported transverse electromagnetic (TEM) ripple (that is, wherein the ripple that laterally is orientated for direction of wave travel of electric field and magnetic field), and waveguide can be supported many possible field structures (being pattern) usually.

In the semiconductor of microelectronic circuit was made, the waveguide and the transmission line that are used to carry the high-frequency electronic signal were implemented in various modes traditionally.Two such embodiments are called as co-planar waveguide (CPW) and coplanar striplines (CPS) respectively.The different view of Fig. 2 A and 2B demonstration co-planar waveguide, and Fig. 3 A and 3B show the different view of coplanar striplines.

Specifically, Fig. 2 A shows by three parallel conductor 20A on the dielectric layer 101 that is disposed on the semiconductor chip 103,40 and the sectional view of the co-planar waveguide 50 that forms of 20B.Fig. 2 B shows the top view of looking down exemplary co-planar waveguide device, wherein each of center conductor 40 terminates on pad 42A and the 42B, conductor 20A and 20B are shown as electrical connection, so that be fully enclosed in conductor 40 on the plane (sectional view of Fig. 2 A is that the dotted line I-I ' along Fig. 2 B gets).Shown in Fig. 2 A and 2B, the width W of conductor 20A and 20B ₁Can be widely greater than the width W of center conductor 40 ₂

In normal work period, the conductor 20A of co-planar waveguide 50 and 20B are electrically connected to ground or reference potential together, and the signal that be transmitted is applied to center conductor 40.In this respect, it should be noted that especially that in co-planar waveguide each ground and signal conductor are asymmetric, because the earthed conductor 20A of combination and 20B are compared with the much bigger area of center conductor 40 coverings.This structure is commonly called " non-equilibrium " structure.Surround the big ground of central signal conductors 40 or the arrangement of reference potential and be used for electric field is limited between center conductor and ground or the reference conductor, create thus by " conduit ", electromagnetic wave can be propagated by it.

Opposite with co-planar waveguide, coplanar striplines is two-conductor device symmetry or balance.Fig. 3 A and 3B show the different perspective view by an example of a spaced apart Utopian infinitely great length coplanar striplines 100 of forming apart from two of S substantially the same parallel conductor 100A and 100B.Particularly, Fig. 3 A shows the sectional view of conductor 100A and 100B, and they for example can be the metal wires above the dielectric layer 101 that is arranged on the substrate 103.Fig. 3 B shows and to look down the top view that is arranged in the conductor on the substrate 103 (sectional view of Fig. 3 A is that the dotted line II-II ' along Fig. 3 B gets).

As seeing easily on Fig. 3 A and 3B, the geometrical relationship of the co-planar waveguide 50 shown in the geometrical relationship of coplanar striplines 100 and Fig. 2 A and 2B go up is significantly different.Particularly, co-planar waveguide 50 comprises three conductors in the cross section, and coplanar striplines 100 includes only two conductors.And unlike earthed conductor 20A and 20B and central signal conductors 40 co-planar waveguide 50, that can have different width respectively, the conductor 100A and the 100B of coplanar striplines have substantially the same width W ₃, shown in Fig. 3 A and 3B.In addition, in coplanar striplines this arrangement of substantially the same parallel conductor be commonly called the symmetry or " balance " structure.Two-conductor structure such symmetry or balance is supported in the differential signal on the coplanar striplines easily, as following further discussion; On the contrary, the asymmetrical or nonequilibrium structure of co-planar waveguide is not supported differential signal, and only supports " single-ended " signal (that is, with the earth potential being the signal of reference).

For many traditional microwave applications, because mainly single-ended or non-equilibrium microwave device is popular, the co-planar waveguide embodiment is usually preferably as the circuit interconnects structure.In addition, co-planar waveguide is looked at as usually compared with coplanar striplines has much smaller loss, particularly arrives the loss of signal of substrate under microwave frequency.Therefore, historically, concentrate on co-planar waveguide rather than coplanar striplines more at many relevant documents aspect the high frequency microelectronic component.Co-planar waveguide is looked at as integrated with the active and passive electric circuit element of connecting with in parallel easily usually.And the length of co-planar waveguide conductor can easily change, and to be matched with the circuit element wire widths, is easy to carry out interconnected with other device thus, and keeps the characteristic impedance of wanting with the co-planar waveguide of interconnected device compatibility simultaneously.Yet, compromise being, owing to flank relative broad, a plurality of earthed conductors of central signal conductors, co-planar waveguide takies very big space.

The various characteristics of co-planar waveguide and coplanar striplines can be modeled at least to a certain extent by using the common notion (such as resistance, inductance, electricity lead and electric capacity) relevant with Circuit theory.Yet, on an essential characteristic, be different from common electric network usually based on wave structure, promptly with respect to the size of operating frequency.For example, though the physical size of electric network is much smaller compared with the wavelength corresponding to operating frequency, based on the size of devices of waveguide and transmission line normally corresponding to sizable mark of the wavelength of the operating frequency of device, it in addition can be many wavelength.Therefore, though can be described to have the discrete component of lumped parameter with the element that resistance, inductance, electricity are led and electric capacity is relevant in common circuit, transmission line and waveguide must be described by the circuit parameter that distributes in the whole length of transmission line/waveguide.

In view of above-mentioned content, Fig. 4 A and 4B show with based on " the line parameter " of the distribution of circuit concept relevant, two different theoretical transmission line/waveguide models.Particularly, Fig. 4 A shows " single-ended " model 30 (it can be applied to the co-planar waveguide 50 shown in Fig. 2 A and the 2B), and Fig. 4 B shows " difference " model 32 (it can be applied to the coplanar striplines 100 shown in Fig. 3 A and the 3B).

In the model of Fig. 4 A and 4B, parameter z is illustrated in the distance (wherein dz represents difference length) of the length of direction of wave travel upper edge transmission line/waveguide.On Fig. 4 A and 4B, be represented as the resistance R of each unit length based on the line parameter of circuit, the inductance L of each unit length, the electricity of each unit length is led the capacitor C of G and each unit length, and wherein R and L are that series element and G and C are elements in parallel.On Fig. 4 B, the numerical value of series element R and L of resulting from is divided (for example, Rdz/2 and Ldz/2) at two of model 32 identical electricity in the middle of leading, with " difference " characteristic of same representation model.

Line parameters R, L, G and the C that can be used for characterizing co-planar waveguide or coplanar striplines directly derives from and (for example is used for making coplanar striplines or co-planar waveguide type of material, dielectric, substrate and metal assembly) with various sizes relevant (for example, the width of conductor and thickness, space, dielectric layer thickness or the like between conductor) with coplanar striplines or co-planar waveguide arrangement.More specifically, material that involves in given structure and size are determined structure dependent various physical characteristics usually, such as effective dielectric constant ε _Eff, magnetic permeability mu and various fissipation factor, and line parameters R, L, G and C are based on these parameters.

In addition, shown in Fig. 4 A and 4B, should see that line parameters R, L, G and C are not discrete or lumped parameter, but distribute equably along the whole length of coplanar striplines or co-planar waveguide.In addition, should see that R is the AC resistance (that is, " series connection " resistance) of each unit length of conductor, and G is owing to the mutual separated dielectric medium of conductor with substrate causes, the electricity of each unit length is led (that is " parallel connection " resistance).

The specific frequency characteristic that distributed resistance, the electricity of coplanar striplines or co-planar waveguide led, inductance and electric capacity cause given embodiment naturally.For example, the common energy storage function of inductance and electric capacity has the frequency dependence based on any resistance/conductance relevant with inductance/capacitance.A common parameter that is used to characterize the frequency characteristic of the system that depends on frequency that comprises given transmission line (or waveguide) structure is called as " quality factor ", and typical earth surface is shown Q in the literature.

The quality factor q that depends on the system of frequency is generally defined as the ratio of the peak value of system or the frequency bandwidth of resonance frequency and system (i.e. frequency range between the half-power point of total frequency response of system).Quality factor q alternatively can be looked at as in the system of being stored in ceiling capacity with in the given time cycle by the ratio of total energy of system loss.In view of above-mentioned content, it is " frequency selectivity " that the system with relatively large Q is looked at as usually, and they approach the frequency of given resonance frequency with less relatively energy loss support.On the contrary, the system with less relatively Q not necessarily has significant frequency preference, therefore usually is looked at as the system that diminishes more or less.

The quality factor of given co-planar waveguide or coplanar striplines arrangement can be by representing along the relevant various parameters of the propagation of co-planar waveguide or coplanar striplines with ripple.Refer again to the coplanar striplines 100 shown in Fig. 3 B, the voltage V (z) that depends on the position of example is illustrated between the conductor, and the electric current I that depends on the position (z) of example is shown as and flows through conductor, and wherein z represents the distance of the direction propagated along ripple.Can be represented as V (z) along the function of the position z of coplanar striplines:

V(z)＝V _oe ^-αzcos(2πft-βz)，

V wherein ₀Be the amplitude of ripple, and measure the phase place (in radian) that (2 π ft-β z) represents ripple, it depends on time t and space z.Certainly, f is a wave frequency, and β is the phase constant of ripple, is defined as β=2 π/λ; In fact, phase constant β represents the distance for each wavelength of advancing, and ripple stands the phase change of the radian of 2 π.At last, α is the decay factor of the loss of representative when ripple is propagated, and it influences total amplitude of ripple; Promptly when α increases, represent bigger loss, the amplitude V of ripple ₀Therefore press e ^{-α z}The factor reduce.As mentioned above, for the system that depends on frequency of relatively low loss, quality factor q also can be expressed as Q ≈ β/2 α with phase constant β and attenuation factor.

The important characteristic parameter of another of transmission line and waveguide relates to the speed of ripple along transmission line or duct propagation.Particularly, the phase velocity of transmission line or duct propagation is represented as v usually, according to v=f λ, is provided at the relation between frequency f and the ripple wavelength X in given medium, and it represents the speed of medium medium wave propagation.Therefore, for given frequency f, less phase velocity v causes short wavelength X.Phase velocity v is obtained from the specific physical characteristic of device, such as effective dielectric constant ε _OffAnd magnetic permeability mu.For the model shown in Fig. 4 A and the 4B, phase velocity can be represented as by the inductance value L of unit length and the capacitance C of unit length

$v=1/\sqrt{\mathrm{LC}}.$

Because the important target that reduces normally to improve the microelectronic component manufacturing technology of circuit size, concentrate in the literature on size based on the microwave device that helps the feature that phase velocity reduces reduces.In addition, phase velocity reduces to cause reducing accordingly of under given operating frequency wavelength.The device such such as resonator, oscillator, impedance matching network, demultiplexer and combiner, filter, amplifier and delayer can be implemented according to transmission line or waveguiding structure.Usually as mentioned above, behind the given operating frequency range of wanting, such size of devices is comparable with wavelength X.Therefore, by reducing phase velocity, can realize littler device.

Remember this point, since the 1970's, studied various " slow wave " structure in the microwave regime always.In addition, many these researchs relate to Monolithic Microwave Integrated Circuit (MMIC), thereby it comprises having merged be designed to reduce the co-planar waveguide that phase velocity and wavelength reduce the feature of device size under given operating frequency or frequency range.The such feature that is used to realize slow wave structure comprises " cycle loads " co-planar waveguide, wherein is placed on unsteady metal tape below three co-planar waveguide conductors periodically and laterally is orientated with respect to conductor.The existence of metal tape of floating is looked at as the electric energy and the magnetic energy of the ripple of spaced apart propagation usually, and this causes the capacitance C of unit length of the increase of co-planar waveguide.According to relational expression $v=1/\sqrt{\mathrm{LC}},$ The capacitance C of the unit length of such increase causes the less phase velocity under the given frequency f, thereby causes less wavelength X.Therefore, these slow wave features help to make littler device.

In traditional slow wave structure based on co-planar waveguide, according to relation beta=2 π/λ, the corresponding increase that reduces to cause phase constant β of wavelength X.Yet according to relational expression Q ≈ β/2 α, the phase constant β of increase is also unclear fully from described document to the influence of quality factor q; Though can expect the increase of Q from the increase of β, the slow wave feature is unclear to the influence of the loss α of co-planar waveguide.In some report, in fact the Q value of co-planar waveguide slow wave structure that has proposed to have merged unsteady metal tape may never have the Q value reduction of the co-planar waveguide of slow wave structure because the loss of the increase that is caused by the existence of slow wave feature.Therefore, it seems in some co-planar waveguide slow wave structure, may between quality factor and phase velocity, have compromise; That is, be convenient to realize less device though can reduce phase velocity, this also causes bigger loss, thus the quality factor of deterioration of device.

Brief summary of the invention

Present disclosure relates generally to the whole bag of tricks and the equipment that involves based on the semiconductor device of coplanar striplines (CPS).

Though co-planar waveguide (CPW) perhaps is subjected to bigger attention in the past in such as the field of microwave circuit device and structure, but the applicant sees and recognizes that various coplanar striplines (CPS) structure can be easy to make several useful high speed microelectronic components, to be used for various application.

Co-planar waveguide combines Fig. 2 A, 2B, 3A and 3B in the above with several difference between the coplanar striplines and discussed.For example, coplanar striplines is the two-conductor structure on the cross section, and co-planar waveguide is three conductor structures on the cross section, typically needs much bigger space compared with coplanar striplines.The two-conductor structure of coplanar striplines is because the symmetry of conductor is " balance " structure; Three conductor structures of opposite co-planar waveguide are because the great asymmetry between three waveguide conductors (that is, two wide conductors and a narrow conductor) is " nonequilibrium " structure.

For many circuit application, the material difference between coplanar striplines and co-planar waveguide perhaps is, mainly due to its balanced structure, coplanar striplines can be supported differential signal, and co-planar waveguide can not be supported differential signal.

Differential signal therein signal may to be easy in the application that " being picked up thing (pickup) " and other various noise polluted be important.For example, by relative longer distance and or wherein may have the environment of several signals or other radiation, the signal that is transmitted may be subjected to undesired distortion, described distortion destroys the integrality of signal.By using two conductors to carry signal in a different manner, any noise that picks up along two conductors can be by payment (by observing the difference between separately signal on two conductors) when differential signal is resumed usually; Particularly, the common-mode noise on conductor by deduct the signal from another conductor one on the conductor signal (preferably only staying differential signal) and by " inhibition ".This notion is commonly referred to " common mode inhibition ".

Coplanar striplines is supported differential signal easily and thus undesired noise is realized that the ability of common mode inhibition can be clear that by referring again to Fig. 3 A and 3B.Particularly, in the coplanar striplines 100 shown on these figure, any of two practically identical conductor 100A and 100B do not need to be in signal ground or other reference potential; On the contrary, two coplanar striplines conductors can be respectively with side by side carry different signals, each is reference with ground or certain other current potential all.And, because conductor is actually identical and adjacent to each other, they aspect noise pickup substantially the samely in response to their environment.

On the contrary, co-planar waveguide (shown in Fig. 2 A and 2B) is only supported " single-ended " signal of telecommunication, promptly is the signal of reference with the earth potential.And co-planar waveguide is because the earthed conductor of its combination compared with the bigger size of its signal conductor, is non-equilibrium inherently.Therefore, the conductor of co-planar waveguide aspect noise pickup differently in response to their environment.So co-planar waveguide is not easy to support differential signal, and there is not to utilize the noise that provides by coplanar striplines to reduce ability based on the device of co-planar waveguide.Certainly, coplanar striplines also can be configured to make its one of two conductors to be in earth potential or certain other reference potential; Yet the ability of the support differential signal of coplanar striplines makes that the coplanar striplines structure is even more ideal compared with coplanar waveguide structure for many circuit application.

In view of above-mentioned content, following public several embodiment relate to the coplanar striplines structure that has merged the various features of being convenient to realize many different microelectronic components.The example that can merge according to the device of the various coplanar striplines structures of present disclosure includes but not limited to impedance matching device, is used for power combination and the device that separates, delayer, resonator, oscillator, filter, amplifier, frequency mixer or the like, comprises the embodiment based on CMOS of such device.In some exemplary embodiment, sine signal source (the standing wave sinusoidal oscillator of more specifically saying so) is according to effective according to the various coplanar striplines structures of present disclosure.

Below some embodiment of further discussing relate to the various features of coplanar striplines embodiment of the quality factor q of the device that raising widely finally obtains.For example, in the various aspects of such embodiment, can realize about 20 or the raising of higher quality factor q for the coplanar striplines device of on silicon chip and other substrate, making.Such raising goes far towards to improve the performance of the various circuit devcies (for example, resonator, oscillator) based on such embodiment.In one embodiment, in the phase velocity that reduces one or more ripples of in device, propagating, reach the raising of quality factor q, be easy to produce littler device thus.In another embodiment, (tapered) coplanar striplines structure that comes to a point causes depending on the line parameter of position, and it can be utilized to obtain the device of very high Q.

For example, one embodiment of the present of invention are at the equipment that comprises coplanar striplines (CPS), and this coplanar striplines includes only first conductor and second conductor parallel to each other basically and that be orientated along first direction basically.The equipment of this embodiment also comprises a plurality of straight line conductive strips that are disposed near coplanar striplines.Described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.Aspect of present embodiment, this equipment also comprises silicon chip, places at least one dielectric substance, a plurality of straight line conductive strips and coplanar striplines on it.In yet another aspect, this equipment be configured to be supported on the coplanar striplines, have from about 1GHz to 60GHz or at least one signal of the frequency the higher scope.Aspect another, coplanar striplines and a plurality of straight line conductive strips are arranged to make that this equipment has at least 30 quality factor q at least one frequency the scope from about 1GHz to 60GHz.

An alternative embodiment of the invention is at a kind of method that is used to carry at least one differential signal, comprise by basically along first direction orientation and be placed on the step that near the coplanar striplines a plurality of straight line conductive strips is carried at least one differential signal, wherein said a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.

It is coplanar striplines discrete or continuous functions along the position of coplanar striplines that another embodiment of the present invention leads G at the electricity of a kind of resistance R that is configured to unit length and unit length.Aspect of this embodiment, implement the coplanar striplines structure come to a point, wherein the width of space between the coplanar striplines conductor and conductor itself is along the length variations of coplanar striplines.Aspect of this embodiment, such structure that comes to a point changes line parameters R and G effectively along the length of coplanar striplines, and keeps the uniform impedance operator of coplanar striplines simultaneously basically, to avoid local reflex.

An alternative embodiment of the invention is at a kind of equipment that comprises the coplanar striplines that comes to a point, this coplanar striplines comprises first conductor and second conductor, wherein first conductor and second conductor be basically along first direction orientation, and wherein the width of the space between first conductor and second conductor and first conductor and second conductor along the length variations of coplanar striplines.The equipment of this embodiment also comprises the conductive strips that are disposed near a plurality of straight lines the coplanar striplines that comes to a point.Described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.

Other embodiments of the invention total at the whole bag of tricks and the equipment that are used to implement based on the standing wave sinusoidal oscillator of coplanar striplines.

For example, one embodiment of the present of invention at a kind of be configured to generate have frequency f ₀Quarter-wave (λ/4) the coplanar striplines standing wave oscillation devices (SWO) of at least one voltage standing wave(VSW).The SWO of this embodiment comprises coplanar striplines, and this coplanar striplines comprises two conductors and have the length L that equals or be approximately equal to quarter-wave (λ/4) that wherein λ is phase velocity and the frequency f by the ripple that constitutes at least one voltage standing wave(VSW) ₀Interrelate.First end that this SWO also is included in coplanar striplines is disposed at least one amplifier between the conductor, and wherein two conductors are joined together at the second end place of coplanar striplines, to form short circuit.

Aspect of present embodiment, described SWO is configured to by utilizing the pattern control technology, and makes the optimize sinusoidal performance that has low power dissipation under high frequency.Particularly, aspect of present embodiment, this SWO is configured to single mode device basically, and it has the distributed amplification scheme that adopts customization along a plurality of amplifiers of the different gain of the length of coplanar striplines by utilization.Aspect another of present embodiment, the different gain of amplifier is " depending on amplitude ", and like this, they are at least in part based in the expection amplitude along the pattern of wanting of each position of the amplifier of coplanar striplines.

More generally, one embodiment of the present of invention comprise along coplanar striplines distributing amplification so that overcome the step of coplanar striplines loss in the mode that changes at a kind of method that is used for generating at least one voltage standing wave(VSW) on coplanar striplines.An alternative embodiment of the invention comprises the step of the oscillation mode of controlling this at least one voltage standing wave(VSW) at a kind of method that is used for generating at least one voltage standing wave(VSW) on coplanar striplines.Aspect these embodiment various, the distributed amplification that depends on amplitude can be utilized to carry out the low-loss single-mode operation.

An alternative embodiment of the invention comprises near a plurality of straight line conductive strips of coplanar striplines that are disposed at a kind of SWO that utilizes the coplanar striplines structure.Described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.Aspect of present embodiment, coplanar striplines conductor and a plurality of straight line conductive strips are arranged relative to each other, so that realize that quality factor strengthen and the phase velocity of the voltage standing wave(VSW) component on the coplanar striplines conductor reduces.

The SWO of the coplanar striplines structure that an alternative embodiment of the invention comes to a point at a kind of utilization is so that reduce power consumption widely by SWO.Aspect of present embodiment, this SWO is configured to make the coplanar striplines zone of low unit length electric conductivity value (low G) to be placed on or near wherein expecting the point of maximum voltage amplitude, so that be reduced to the power dissipation of substrate.In addition, another aspect, the coplanar striplines zone of low resistance per unit length value (low R) are placed on or near wherein expecting the point of maximum current, so that reduce the power dissipation (that is series loss) from transmission line itself.

An alternative embodiment of the invention at a kind of coplanar striplines SWO that utilizes the distributed amplification scheme of one or more customizations, a plurality ofly be disposed near straight line conductive strips the coplanar striplines and the coplanar striplines structure that comes to a point, so that Implementation Modes control and reduce total power dissipation of oscillator.

In another embodiment, described SWO is configured to make the energy-conservation power of frequency adjustable to be optimized once more, is easy to regulate greatly oscillator frequency simultaneously so that reduce power dissipation.For example, one embodiment of the present of invention are at a kind of frequency that is used to be controlled at least one voltage standing wave(VSW) on the coplanar striplines, comprise at least one frequency control apparatus is placed on the position that is similar to the mid point between the no-voltage node of the amplitude peak of at least one voltage standing wave(VSW) and this at least one voltage standing wave(VSW) along coplanar striplines.

An alternative embodiment of the invention is at a kind of closed loop based on toroidal cavity resonator coplanar striplines embodiment (for example, circle) SWO.Particularly, the SWO of present embodiment comprises: comprise the closed loop coplanar striplines of two conductors, and be disposed at least one amplifier between two conductors at the primary importance place.Two conductors are joined together at the second place place that is different from primary importance, so that provide the no-voltage node for this at least one voltage standing wave(VSW).Aspect present embodiment various, the distributed amplification scheme of one or more customizations, a plurality ofly be disposed near the straight line conductive strips the coplanar striplines and the coplanar striplines structure that comes to a point can be used together with closed-loop structure.In yet another aspect, comprise that the cross-linked specific amplifier architecture of coplanar striplines conductor is utilized to move by using specific resonator topology to be convenient to single mode, to avoid causing the great loss in the oscillator.

Should see that all combinations of above-mentioned notion and the additional notion discussed in more detail below are looked at as the part of theme of the present invention disclosed herein.Particularly, all combinations of the theme of the claims that occur at the end of present disclosure are looked at as the part of theme of the present invention disclosed herein.

The accompanying drawing summary

Do not plan accompanying drawing is drawn in proportion.In the accompanying drawings, each that on each figure, shows identical or represent with identical Reference numeral near identical parts.For clarity, not that each parts all adds label on each figure, on figure:

Fig. 1 shows the various examples of traditional transmission line;

Fig. 2 A and 2B show the different view of traditional co-planar waveguide (CPW);

Fig. 3 A and 3B show the different view of traditional coplanar striplines (CPS);

Fig. 4 A shows " single-ended " model for the distributed line parameter of the co-planar waveguide of Fig. 2 A and 2B;

Fig. 4 B shows " difference " model for the distributed line parameter of the coplanar striplines of Fig. 3 A and 3B;

Fig. 5 A and 5B be respectively show according to one embodiment of the present of invention, based on the perspective view and the sectional view of the example of the equipment of coplanar striplines structure;

Fig. 6 A, 6B and 6C be show according to various embodiment of the present invention, for the quality factor q of the emulation of the different configuration of the equipment of Fig. 5 A and 5B three curves to signal frequency;

Fig. 7 A, 7B and 7C be show according to various embodiment of the present invention, reduce three curves for the slowing factor of the emulation of the different configuration of on Fig. 6 A, 6B and 6C, representing or phase velocity to signal frequency;

Fig. 8 is according to the sectional view of another embodiment of the present invention, exemplary equipment based on the coplanar striplines structure;

Fig. 9 A and 9B are according to various embodiment of the present invention, respectively relatively for two curves that reduce based on the quality factor q of the different equipment of Fig. 5 A and 5B and structure shown in Figure 8 and slowing factor or phase velocity;

Figure 10 shows the sectional view according to an alternative embodiment of the invention, exemplary equipment based on the coplanar striplines structure;

Figure 11 shows the perspective view according to an alternative embodiment of the invention, exemplary equipment based on the coplanar striplines structure;

Figure 12 shows the example based on traditional standing wave oscillation device of coplanar striplines embodiment;

Figure 13 A shows according to example one embodiment of the present of invention, quarter-wave coplanar striplines standing wave oscillation device;

Figure 13 B shows the voltage and current waveform for the oscillator shown in Figure 13 A;

Figure 14 A shows the example according to quarter-wave coplanar striplines standing wave oscillation device one embodiment of the present of invention, that utilize a plurality of amplifiers;

Figure 14 B shows the voltage waveform for the oscillator shown in Figure 14 A;

Figure 15 A shows according to example one embodiment of the present of invention, that utilize the quarter-wave standing wave oscillation device of the coplanar striplines structure that comes to a point;

Figure 15 B is with respect to the reproduction of the voltage and current waveform of Figure 15 A location, Figure 13 B, so as to show with according to each relevant conception of species of the coplanar striplines structure that comes to a point of one embodiment of the present of invention;

Figure 16 show according to one embodiment of the present of invention, be used to change the characteristic impedance Z that does not change the band line along the R of the coplanar striplines that comes to a point and G ₀Method;

Figure 17 further shows according to method coplanar striplines, Figure 16 one embodiment of the present of invention, that combination comes to a point piecemeal;

Figure 17 A shows according to transistorized influence one embodiment of the present of invention, that load in the exemplary configurations of Figure 17;

Figure 17 B shows according to method flow diagram one embodiment of the present of invention, that be used to design the coplanar striplines structure that comes to a point piecemeal;

Figure 18 A, 18B show according to photos various embodiment of the present invention, three different (λ/4) coplanar striplines standing wave oscillation device designs with 18C;

Figure 19 A shows according to frequency adjustable joint property the different of parts one embodiment of the present of invention, that be used for the standing wave oscillation device with 19B and represents;

Figure 20 A and 20B show according to example one embodiment of the present of invention, closed loop standing wave oscillation device;

Figure 21 shows according to example an alternative embodiment of the invention, closed loop standing wave oscillation device; And

Figure 22 A and 22B show the exemplary signal that obtains from the emulation of the closed loop standing wave oscillation device of Figure 21.

Describe in detail

As discussing in brief summary of the invention, the various embodiment of present disclosure are at the whole bag of tricks and the equipment that involve based on the semiconductor device of coplanar striplines (CPS).The applicant sees and recognizes that various coplanar striplines structures can be formed for the basis of useful high speed microelectronic components many application, several.The example based on the device of CPS that has merged according to each conception of species of present disclosure includes but not limited to impedance-matching device, is used for power combination and the device that separates, delayer, resonator, oscillator, filter, amplifier, frequency mixer or the like, comprises the embodiment based on CMOS of such device.

Usually, according to various embodiment of the present invention, can be supported in differential signal in the scope from about 1GHz to about 100GHz based on the high speed microelectronic component of coplanar striplines embodiment, but should see that present disclosure is not limited to these aspects.For example, in some embodiment based on notion disclosed herein, device can be configured to run in the various frequency ranges, to support single-ended or differential signal.

Below among the embodiment that further discusses, can merge the various features of the quality factor q of the device that raising widely finally obtains based on the device of CPS.In addition, the phase velocity of the one or more ripples that reduce to propagate in device in the enhancing that reaches quality factor q also is easy to make less relatively device thus.

In being right after below chapters and sections, at first provide can in various devices, utilize usually, relate to embodiment according to the different coplanar striplines structure of present disclosure.The later chapters and sections of present disclosure provide the concrete example that comprises standing wave oscillation device (SWO), based on some concrete example of the device of various coplanar striplines structures.Should see that example discussed here mainly is provided to illustrate some outstanding notion on the basis that constitutes present disclosure, and any concrete mode or any concrete example that the invention is not restricted to embodiment discussed here.

I. the coplanar striplines that has the floating conductor array

Fig. 5 A and 5B be respectively show according to one embodiment of the present of invention, based on the perspective view and the sectional view of the example of the equipment 60 of coplanar striplines structure.In the upper left corner of Fig. 5 A, comprise that the coordinate system of x axle 36, y axle 38 and z axle 34 is provided for total orientation of the perspective view of equipment 60; Similarly, on Fig. 5 B, be along the direction that is parallel to z axle 36 at the y in upper left corner axle 38 and z axle 34 expression sectional views.

Shown in Fig. 5 A, described equipment comprises coplanar striplines 100, and it has the first conductor 100A and the second conductor 100B parallel to each other basically and that be orientated along the first direction that is parallel to z axle 34 basically.Equipment 60 also comprises the array 62 of the conductive strips of the straight line basically that is disposed in close coplanar striplines 100.The straight line conductive strips of forming array 62 are parallel to each other basically, and array 62 is basically along the second direction orientation vertical with first direction.Aspect of present embodiment, shown in Fig. 5 A, second direction can be arranged essentially parallel to x axle 36, promptly with the first direction quadrature of coplanar striplines 100 along its orientation.Should see that the number of the conductive strips that draw is mainly used in explanation in the array shown in Fig. 5 A and the 5B, and any concrete number that the invention is not restricted to conductive strips in array 62.

Shown in Fig. 5 A and 5B, equipment 60 also comprises at least one dielectric substance 101 that is placed at least between coplanar striplines 100 and the conductive strips array 62 and the substrate 103 of placing dielectric substance, conductive strips array and coplanar striplines on it.Aspect of present embodiment, dielectric substance 101 can be a silica, but the present invention is not limited in this respect, because can utilize other dielectric substance in various embodiments.Aspect another of present embodiment, substrate 103 can be a silicon; Yet again, the present invention is not limited in this respect, because can utilize other substrate (for example, GaAs, SiGe or the like) in various embodiments.With reference to figure 5B, can see, another aspect according to present embodiment, coplanar striplines 100 (wherein having only conductor 100B can see on the figure of Fig. 5 B) is disposed in first plane 64, and straight line conductive strips array 62 is disposed in second plane 66 that is arranged essentially parallel to first plane 64, like this, the normal 65 on first plane and second plane passes conductor of coplanar striplines and at least one conductive strips of array 62.

According to the others of the equipment 60 of the embodiment shown in Fig. 5 A and the 5B, this equipment is configured to be supported at least one signal on the coplanar striplines, that have the frequency the scope from about 1GHz to 100GHz usually.More specifically, this equipment can be configured to be supported at least one signal on the coplanar striplines, that have the frequency the scope from about 10GHz to 60GHz.In various embodiments, differential signal (or single-ended signal) can be transferred along the conductor 100A and the 100B of coplanar striplines, and the array of straight line conductive strips is maintained at floating potential with respect to conductor 100A and 100B simultaneously.As following further discussion, floating conductor array 62 is near coplanar striplines 100, the quality factor q that causes equipment is with respect to the increase of (for example, with reference to Fig. 3 A and 3B) observed equipment quality factor q value in not having traditional coplanar striplines of array 62 usually.

For example, aspect of the embodiment of Fig. 5 A and 5B, the array 62 of coplanar striplines 100 and straight line conductive strips is arranged to make equipment to have at least 30 quality factor q at least one frequency the scope from about 1GHz to 60GHz at least.Aspect another, the array of coplanar striplines and straight line conductive strips is arranged to make equipment to have at least 50 quality factor at least one frequency the scope from about 1GHz to 60GHz at least.Aspect another, the array of coplanar striplines and straight line conductive strips is arranged to make equipment to have at least 70 quality factor at least one frequency the scope from about 1GHz to 60GHz at least.As following further discussion, above-mentioned characteristic at least in part via the specific size of the various parts of equipment, in the selection of specific interval between the parts and the material type in equipment, utilized and reach.

According to another aspect of present embodiment, the existence of floating conductor array 62 also can cause the reducing of phase velocity of one or more ripples of propagating in device in the equipment 60 of Fig. 5 A and 5B, also is easy to make less relatively device thus.This of floating conductor array " slow wave " effect is known in other structure, wherein cycle of waveguide or transmission line is loaded electric energy and the magnetic energy that is considered to usually to be used in the ripple that apart propagates by such floating conductor.Such separating of electric energy and magnetic energy causes the capacitor C of unit length of the increase of described structure.According to relational expression $v=1/\sqrt{\mathrm{LC}},$ The capacitor C of the unit length of such increase causes less phase velocity v again, thus the less wavelength X under given signal frequency f.

Discussion Q in equipment 60 strengthens and phase velocity reduces effect in order to be easy to, expression is used for a plurality of yardsticks of various parts and the interval between parts on Fig. 5 A and 5B, and for some physical characteristic (for example DIELECTRIC CONSTANT and permeability σ) of the material that in equipment, utilizes.

For example, for coplanar striplines 100, on Fig. 5 A, represent with symbol W along the width 68 of each conductor of first and second conductor 100A of direction that are parallel to x axle 36 and 100B.Similarly, interval between first and second conductors 70 or distance are represented with symbol S.Therefore, represent with symbol D on Fig. 5 A for the size of total width of coplanar striplines 100, wherein D=2W+S.On Fig. 5 A and 5B, use symbol t for thickness 74 along each conductor of first and second conductor 100A of direction that are parallel to y axle 38 and 100B _CpsExpression.At last, in equipment 60, on Fig. 5 A and 5B, use symbol L along total length 96 of coplanar striplines 100 of the direction that is parallel to z axle 34 _CPSExpression.

For the array 62 of straight line conductive strips, on Fig. 5 A, use symbol l along the length 76 of each band of the direction that is parallel to x axle 36 _sExpression.Similarly, on Fig. 5 A and 5B, use symbol d along the width 78 of each band of the direction that is parallel to z axle 34 _AExpression, and use symbol d along the interval 80 (shown in Fig. 5 A and 5B) of this direction between the adjacent band of array _BExpression.Each band for array 62 is represented as t along the thickness 84 that is parallel to the direction of y axle on Fig. 5 A and 5B _Strip, and be represented as d along the distance 82 of this direction between first plane 64 (coplanar striplines 100 thereon) and second plane 66 (array 62 thereon) _S

For the dielectric substance 101 and the substrate 103 of the equipment 60 shown in Fig. 5 A and the 5B, on Fig. 5 A and 5B, use symbol d along the direction that is parallel to the y axle, the dielectric thickness between the coboundary of second plane 66 and substrate 103 or distance 86 _DieExpression, and the dielectric constant 90 of dielectric substance is used ε _DieExpression.Similarly, substrate thickness or the distance 88 along the direction that is parallel to the y axle is represented as d _Sub, the dielectric constant 92 of substrate is represented as ε _SubAnd the conductance 94 of substrate is represented as σ _Sub

Usually, as discussed above, the applicant see and recognize the various parts of equipment 60 specific yardstick, singly do not determine that in the selection of specific interval between the parts and the material type in equipment, utilized equipment wherein can carry the frequency range of the signal of signal effectively, and the degree that the Q that realizes in definite equipment strengthens and phase velocity reduces.Particularly, in emulation and experimentation, set up multiple useful popularization, more specifically, strengthened and phase velocity reduces one or the two, the length l of the conductive strips of array 62 with respect to Q about total structure of equipment 60 _s, width d _AWith interval d _B

For example, according to the aspect of the embodiment of Fig. 5 A and 5B, usually, the advantageous conditions that strengthens for significant Q can comprise the wherein length l of the conductive strips of array _sThe approximately equalised structure of total width D with coplanar striplines 100.More specifically, in one aspect, the length l of conductive strips therein _sBe slightly larger than and observe very big Q in the structure of total width D of (for example, big approximately 10%) coplanar striplines and strengthen.

In others, the advantageous conditions that strengthens for very big Q also can comprise the wherein width d of each conductive strips _AAnd the interval d between the adjacent conductive band _BAt least one item in the middle of the two is widely less than the structure of total width D of coplanar striplines.More specifically, favourable Q enhancing structure can comprise the structure that wherein finds the one or more conditions in the following condition: width d _AWith interval d _BCompared with total width of coplanar striplines to magnitude when young; The width d of conductor wire _AAnd the interval d between conductor wire _BThe approximately little magnitude of total width compared with coplanar striplines; And width d _AWith interval d _BBe approximately equalised.

According to another aspect, favourable Q strengthens structure can comprise the structure that wherein finds the one or more conditions in the following condition: the width d of each conductive strips _AAnd the interval d between the adjacent conductive band _BAt least one item in the middle of the two is widely less than total length L of coplanar striplines _CPSWidth d _AWith interval d _BTotal length L compared with coplanar striplines _CPSTo magnitude when young; The width d of conductor wire _AAnd the interval d between conductor wire _BTotal length L compared with coplanar striplines _CPSAn approximately little magnitude; And width d _AWith interval d _BBe approximately equalised.

Fig. 6 A, 6B and 6C show for various sizes discussed above and interval (for example, the length l of the conductive strips of array 62 _s, each conductive strips width d _A, and the interval d between the adjacent conductive band _B) various different numerical value, for the quality factor q (vertical axis of curve chart) of 60 emulation of equipment shown in Fig. 5 A and the 5B to three curves in a plurality of figure of the signal frequency (trunnion axis of curve chart) of GHz.Should see that the concrete structure that the curve of Fig. 6 A, 6B and 6C is provided by emulation only is exemplary, the various device relevant with present disclosure is not limited to the example of emulation.The result of the device of emulation and generation thus is here mainly in order to illustrate that being right after some notion of discussing for the exemplary advantage of Q enhancing in the above discusses.

In the emulation that reflects on the curve chart of Fig. 6 A, 6B and 6C, the substrate 103 of the equipment 60 shown in Fig. 5 A and the 5B is to have 250 microns thickness d _Sub, 11.9 DIELECTRIC CONSTANT _SubConductivity with 10 Siemens/rice _Sub Silicon.Dielectric substance 101 is to have 5.155 microns thickness d _DieWith 4.0 DIELECTRIC CONSTANT _DieSilica.The width W of the conductor 100A of coplanar striplines 100 and each conductor of 100B is 80 microns, and the interval S between conductor is 60 microns, and like this, total width D of coplanar striplines is 220 microns.The thickness t of each conductor 100A and 100B _CpsBe 0.925 micron, the interval d between coplanar striplines and array 62 _sIt is the thickness t of 1.0 microns and each conductive strips _StripIt is 0.64 micron.At last, the length L of the equipment of emulation _CPSIt is 400 microns.

For the above-mentioned numerical value of the constant of all emulation of the curve that is used to cause Fig. 6 A, 6B and 6C, the length l of the conductive strips of array 62 _s, each conductive strips width d _s, and the interval d between the adjacent conductive band _BAll changed independently respectively, to observe their influences for the quality factor q of equipment.Following table 1 is summarized the different numerical value for these parameters of using in the emulation of the curve that obtains Fig. 6 A, 6B and 6C, and then discusses in more detail for curve.The equipment of the different emulation of each curve representative reference and that on Fig. 6 A, 6B and 6C, show on the table 1.

Curve number	Length l s(micron)	Width d A(micron)	Interval d B(micron)
				150	240	5	5
152	400	5	5
				154	180	5	5
156	240	5	5
				158	240	1	5
160	240	10	5
				162	240	20	5
164	240	5	5
				166	240	5	10
168	240	5	20
				170	240	5	0.5

Table 1

Fig. 6 A shows to represent respectively for conductive strips to have three different length l _sWhile width d _AWith interval d _BEach all remains three curves 150,152 and 154 of 5 microns equipment unchangeably.Particularly, curve 150 reflects 240 microns length l _s(being longer than the width D of coplanar striplines a little), the length l that curve 152 reflections are 400 microns _sThe length l that 154 reflections of (being longer than the width D of coplanar striplines widely) and curve are 180 microns _s(less than the width D of coplanar striplines).

Can see easily that from the curve of Fig. 6 A under the frequency near 30GHz, length approximates and is longer than a little in the equipment of emulation of width D of coplanar striplines and obtains quality factor qs the highest, about 65 therein.Yet,, should see that each the emulation device among Fig. 6 A obtains very big Q and strengthens with respect to based on the coplanar striplines that uses identical yardstick and material but do not have the equipment of the array 62 of conductive metal band as what further discuss below in conjunction with Fig. 9 A.Particularly, the quality factor q that does not have such device of array 62 is remaining on from the frequency range of about 5-60GHz less than 10 (seeing the curve 176 of Fig. 9 A).Therefore, array 62 is added to such equipment (for example, as Fig. 5 A with shown in the 5B) and causes various different length l usually for conductive strips _sObtaining very big Q in this frequency range strengthens.

Fig. 6 B shows to represent respectively for conductive strips to have four different width d _AThe length l of described band of while _sRemain the interval d between 240 microns and each band unchangeably _BRemain four curves 156,158,160 and 162 of 5 microns equipment unchangeably.Particularly, curve 156 reflects 5 microns width d _A(promptly equal d at interval _B); Therefore, this curve is equal to the curve 150 that shows on Fig. 6 A.The width d that curve 158 reflections among Fig. 6 B are 1 micron _A(widely less than interval d _B), the width d that curve 160 reflections are 10 microns _A(interval d _BTwice) and the width d of 20 microns of curve 162 reflections _A(widely greater than interval d _B).

Can easily see from the curve of Fig. 6 B, under frequency near 30GHz, width d therein _AWith interval d _BAll be 5 microns (widely less than the total width D and the length L of coplanar striplines 100 _CPS) the equipment of emulation in obtain quality factor qs the highest, about 65.Yet, should see that equally each the emulation device among Fig. 6 B is except by the device of curve 162 representative (width d wherein _AWidely greater than interval d _B) in addition, with respect to based on the coplanar striplines that uses same size and material but do not have the equipment (seeing the curve 176 of Fig. 9 A) of the array 62 of conductive metal band, obtain very big Q and strengthen (Q＞10).Under the situation of the curve 162 of Fig. 6 B, with respect to interval d _BMuch bigger width d _ACan therefore weaken array 62 for the loss and the effect that strengthens quality factor q that reduce in the equipment so that conductive strips begin to be similar to conductive plate rather than the array below coplanar striplines.

Fig. 6 C shows to represent respectively to have four different interval d between the adjacent conductive band _BThe length l of described band of while _sRemain the width d of 240 microns and each band unchangeably _ARemain four curves 164,166,168 and 170 of 5 microns equipment unchangeably.Particularly, curve 164 reflects 5 microns interval d _B(promptly equal width d _A), the interval d that curve 166 reflections are 10 microns _B(width d _ATwice), the interval d that curve 168 reflection is 20 microns _B(widely greater than width d _A) and the width d of 0.5 micron of curve 170 reflection _B(widely less than width d _A).

Should see that the curve 164 of Fig. 6 C is equal to the curve 156 of Fig. 6 B and the curve 150 of Fig. 6 A, i.e. width d _AWith interval d _BAll be 5 microns, for this situation at the Q that in the emulation of Fig. 6 A and 6B, obtains the highest 65 under the frequency of about 30GHz.Yet, see enjoyably from the curve 166 of Fig. 6 C, under the frequency of about 30GHz, therebetween every d _BBe 10 microns and width d _ABe to obtain higher a little about 70 quality factor q in 5 microns the emulator.In addition, it is worthy of note that under the frequency of about 35GHz, structure hereto obtains 75 the highest Q for the emulation of Fig. 6 C from curve 166.

In a word, in the emulation of Fig. 6 C, width d _AWith interval d _BSize all widely less than the total width D and the length L of coplanar striplines 100 _CPSIn addition, each emulation device of Fig. 6 C obtains very big Q and strengthens (Q＞10) with respect to based on the coplanar striplines that uses same size and material but do not have the equipment (for example, seeing the curve 176 of Fig. 9 A) of the array 62 of conductive metal band.Under the situation of the curve 170 of Fig. 6 C, from respect to interval d _BThe width d that (0.5 micron) is much bigger _AIt may be because conductive strips begin to be similar to conductive plate rather than the array below coplanar striplines equally that the less slightly Q that (5 microns) obtain strengthens, and weakens array 62 thus for the loss and the effect that strengthens quality factor q that reduce in the equipment.

Fig. 7 A, 7B and 7C be show respectively corresponding to the emulation shown in the curve chart of Fig. 6 A, 6B and 6C, " slowing factor " or phase velocity reduce (vertical axis of curve chart) to three curve charts in the signal frequency (trunnion axis of curve chart) of GHz.Particularly, the curve of Fig. 7 A 150 ', 152 ' with 154 ' corresponding to the simulated conditions (see Table 1) identical with the curve 150,152 and 154 of Fig. 6 A, and Fig. 7 B and 7C have the similar correspondence with the curve of Fig. 6 B and 6C.On the curve chart of Fig. 7 A, 7B and 7C and as in this article other places discuss, " slowing factor " is defined as c/v, wherein c (for example, represents airborne velocity of wave $c=1/\sqrt{{\mathrm{\ϵ}}_o{\mathrm{\μ}}_o}),$ And v representative given based on the phase velocity in the emulator of coplanar striplines.

As what can on the curve chart of Fig. 7 A, 7B and 7C, see easily, according to all emulators of the size that provides at table 1 present certain significantly phase velocity reduce.Yet, what is interesting is, the curve that the curve (being curve 152 ', 156 ' and 170 ') that maximum phase velocity reduces on the curve chart of presentation graphs 7A, 7B and 7C not necessarily strengthens corresponding to the maximum Q on the curve chart of presentation graphs 6A, 6B and 6C under all scenario (for example, the curve 150 of comparison diagram 6A and the curve 150 ' of Fig. 7 A).Sizable degree of freedom when therefore, these curve charts are presented at design and make equipment " optimization " according to present disclosure various based on the equipment of CPS with for application-specific.In other words, can partly reduce (this relates to phase velocity and reduces) at least according to the concrete size of the various parts of the equipment of present disclosure and the importance separately of loss (this relates to quality factor q) in given application is selected according to size.

In addition, should see that the concrete structure of emulation only is exemplary for the curve chart that Fig. 6 A, 6B, 6C, 7A, 7B and 7C are provided, be not limited to the concrete material and the size that in these examples, adopt according to the various device of present disclosure.Yet, generally speaking, these emulation are total show according to various embodiment of the present invention based on the equipment of coplanar striplines in can realize that very big Q strengthens and phase velocity reduces.These emulation provide also that Q strengthens and the noticeable guide of the structure of such equipment that phase velocity reduces for wherein observing.

Fig. 8 is according to the sectional view (being similar to the sectional view of Fig. 5 B) of another embodiment of the present invention, equipment 60A.On Fig. 8, equipment 60A comprises it being two the array 62A and the 62B of straight line conductive strips basically, one of them array 62A is disposed on second plane 66, and another array 62B is disposed on the 3rd plane 67 that is arranged essentially parallel to first plane 64 and second plane 66.According to the aspect of embodiment shown in Figure 8, the conductive strips of array 62A and 62B are arranged in the mode that replaces, so that the normal on first, second and the 3rd plane does not pass the conductive strips of array 62A and the conductive strips of array 62B simultaneously.A plurality of array 62A that adopt in the equipment 60A of Fig. 8 and 62B be usually compared with realizing that at the equipment 60A shown in Fig. 5 A and the 5B further phase velocity reduces, simultaneously with do not have any conductive strips array, strengthen based on the equipment of the coplanar striplines Q that keeps quite big degree that compares.

Fig. 9 A and 9B display quality factor Q respectively reduce two curve charts to frequency to frequency and slowing factor or phase velocity, wherein relatively based on single array apparatus 60 of many array apparatus 60A, Fig. 5 A of Fig. 8 and 5B with do not have the simulation result phase place speed of the coplanar striplines equipment (seeing Fig. 3 A and 3B) of the same size of any conductive strips array.Particularly, on Fig. 9 A, curve 172 representative is for the Q of single array apparatus 60 simulation result to frequency; Curve 174 representative is for the Q of the many array apparatus 60A simulation result to frequency; Curve 176 representative is for the Q of the coplanar striplines equipment that does not the have any conductive strips array simulation result to frequency.On Fig. 9 B, curve 172 ' representative is for the slowing factor of single array apparatus 60 simulation result to frequency; Curve 174 ' representative is for the slowing factor of the many array apparatus 60A simulation result to frequency; Curve 176 ' representative is for the slowing factor of the coplanar striplines equipment that does not the have any conductive strips array simulation result to frequency.

On Fig. 9 A and 9B, on all emulators, adopt silicon chip and silicon oxide dielectric material, its material parameter (ε _Die, ε _Sub, σ _Sub) and substrate thickness d _SubThose parameters of discussing with the emulation that the above Fig. 6 of being combined in A, 6B and 6C upward represent are identical.In addition, coplanar striplines size W, S, D, L _CPSAnd t _CpsBe above identical with those parameters that 6C discusses in conjunction with Fig. 6 A, 6B.For single array and the emulation of many array apparatus of Fig. 9 A and 9B, the length l of each conductive strips _sBe 240 microns, the width d of each band _ABe 5 microns, the interval d between the phase adjacent band of same array _BBe 5 microns, and the thickness t of each conductive strips _StripIt is 0.64 micron.For many array apparatus, with reference to figure 8, between first and second planes and between the second and the 3rd plane apart from d _sBe 1.0 microns, the dielectric thickness d between the border of the 3rd plane 67 and substrate 103 _DieIt is 3.515 microns.

As what see easily at Fig. 9 A, though as curve 174 expressions, many array apparatus do not reach the same high quality factor q with single array apparatus (Figure 172 represents by curve), but many arrays and single array apparatus with compare as curve 176 equipment based on coplanar striplines expression, that do not have any array, obtaining significantly, Q strengthens.More specifically, curve 176 (representing basically at the coplanar striplines on the silicon chip) keeps being lower than 10 Q widely for the most of frequency ranges between about 5GHz and 60GHz, and curve 172 and 174 hereto most of frequencies of frequency range keep being much higher than 10 Q.

On Fig. 9 B, see easily, obtain much higher slowing factor compared with single array apparatus or phase velocity reduces by curve 172 ' representative as many array apparatus of curve 174 ' representative.Yet, single array and many array apparatus with compare as the curve 176 ' equipment based on coplanar striplines expression, that do not have any array, obtain very big phase velocity and reduce.

In another embodiment, the different numbers of the conductive strips of many arrays and arrange can together with coplanar striplines be utilized to realize Q strengthens and phase velocity reduces one of them or the two.For example, Figure 10 show the conductive strips of the straight line basically that adopts three array 62A, 62B and 62C, according to the sectional view (being similar to the figure of Fig. 5 B and Fig. 8) of the equipment 60B of one embodiment of the present of invention.The equipment 60B of Figure 10 is substantially similar to equipment shown in Figure 8, except add the array 62C that is disposed in Siping City's face 69 that is parallel to first plane 64, second plane 66 and the 3rd plane 67 on Figure 10.Figure 11 show the conductive strips that adopt two array 62A and 62D, according to the perspective view (being similar to the figure of Fig. 5 A) of another the equipment 60C of one embodiment of the present of invention, wherein array 62A and 62D are arranged in the below and the top of coplanar striplines 100.Different aspect according to the embodiment of Figure 11, each conductive strips of one of them of array 62A and 62D can with the corresponding conductive strips perpendicular alignmnet ground of another array among array 62A and the 62D (promptly, along the y axle) arrange, or alternatively, each band of described array can be arranged (for example, being similar to the many arrays arrangement shown in Fig. 8 and 10) in the mode that replaces.In yet another embodiment, the conductive strips of one or more arrays can be arranged in every way the top of coplanar striplines 100 and/or below.

II. coplanar striplines standing wave oscillation device

Discussed with according to each relevant conception of species of coplanar striplines structure present disclosure, that can in various different device, use after, provide now based on the standing wave oscillation device, according to the exemplary coplanar striplines device of other embodiments of the invention.Should see,, can or not necessarily be configured to have conductive strips as above one or more arrays of in first segment, discussing according to standing wave oscillation device of the present invention according to the following different embodiment that at length discusses.

A. background

The most basic and one of ubiquitous structure piece of communication system and many other application is an oscillator.Basically all communication systems at a time all need reference oscillator to realize various and the function associated of communicating by letter.As a result, the oscillator design in the high frequency field is interesting career field.Particularly, the electromagnetic effect of required consideration causes great interest to various high-frequency generator designs based on transmission line when system frequency increases greatly.

Be utilized to be created on high frequency clock signal in the GHz scope traditionally based on various types of oscillators of transmission line embodiment.The final purpose of many these conventional methods is in fact to generate the square wave clock signal, and it can be distributed to the whole integrated circuit (IC) system that does not have the phase shift that great propagation delay causes globally.More specifically, these methods have the global clock signal of low clock skew and low clock jitter usually at generation, and it can be propagated on whole system in the mode that keeps the correct ordering of incident in the whole system.Traveling wave oscillation device (TWO) and standing wave oscillation device (SWO) based on the transmission line embodiment have been used in such purpose.

Because the characteristic of the uniqueness of standing wave, standing wave is interested especially aspect present disclosure.When two ripples of advancing along opposite direction, have identical amplitude and frequency are interactive, form standing wave.Unlike row ripple (its along having time dependent amplitude and phase place on the given position of transmission line), standing wave is along having constant amplitude and phase place on the given position of transmission line, and wherein amplitude changes with position along the line sinusoidally.A kind of usual way of formation voltage standing wave is to send an incident wave to transmission line, and from the harmless termination such as short circuit wave reflection is returned.Yet, typically cause the amplitude between incident wave and reflected wave not match from the loss of transmission line conductors itself (for example) because " series connection " loss of R and because " parallel connection " loss of G, cause remaining capable ripple, it makes the standing wave distortion.Therefore, in order to implement self-sustaining standing wave oscillation device effectively, must utilize certain type compensation scheme (that is, amplifying) to overcome loss intrinsic in transmission line.

Use a traditional embodiment of the standing wave oscillation device of coplanar striplines to be shown in Figure 12.On Figure 12, coplanar striplines 100 (being similar to the coplanar striplines shown in Fig. 3 A and the 3B) with conductor 100A and 100B is configured to that the place, two ends at coplanar striplines forces a voltage standing wave(VSW) node (promptly by the two ends of the length of short circuit coplanar striplines, zero potential between conductor 100A and 100B), thus form half-wave (λ/2) resonator 200.In theory, at least one standing wave that resonator 200 support has the frequency relevant with λ, the amplitude of its medium wave is along the length variations of resonator, as the bottom of Figure 12 schematically shows.

In the oscillator structure of Figure 12, the coplanar striplines conductor losses is compensated so that distributed mutual conductance to be provided by providing along the isolated distributed amplifier of the length of resonator (being trsanscondutor) the influence of signal amplitude.Particularly, Figure 12 shows by three current source 106A, 106B and a plurality of NMOS of 106C power supply separately cross-linked to trsanscondutor 104A, 104B and 104C.Each trsanscondutor in the middle of these trsanscondutors is coupled to the conductor 100A and the 100B of coplanar striplines 100 in the different position along coplanar striplines.Load 108A, 108B and 108C that a plurality of PMOS diodes connect also are coupled to coplanar striplines 100, to be based upon the common-mode voltage between conductor 100A and the 100B.

It should be noted that in the structure of Figure 12 trsanscondutor 104A, 104B are configured to have identical gain with 104C.The gain of given trsanscondutor be multiply by the transistorized width relevant (that is, transistor gain increases with width and/or electric current) of forming trsanscondutor with the electric current that is provided by the current source relevant with trsanscondutor (one of current source 106A, 106B and 106C).In oscillator structure shown in Figure 12, each right transistor of cross-couplings has identical width, and each trsanscondutor is provided to identical electric current; Therefore, trsanscondutor all has identical gain.Use a plurality of trsanscondutors to compensate conductor losses on the coplanar striplines with identical gain, allow to make the lumped parameter model of the equivalence that is used for such coplanar striplines, it is easy to directly determine for the needed resonator parameter of vibration that is supported under the given frequency relatively.

Yet, in the structure of Figure 12 owing to a problem that adopts a plurality of trsanscondutors with identical gain to cause is demonstrably, to waste very big energy owing to cross amplification.More specifically, refer again to the oscillogram in the bottom of Figure 12, should see easily, for shown wave mode, the amplitude of the ripple at the center of close resonator structure has maximum, and along with the arbitrary end to resonator stably reduces away from this center.Therefore, in order to support shown pattern, trsanscondutor 104A has identical gain with the trsanscondutor 104B that 104C is configured to have with being positioned at the resonator center, and they are configured to demonstrably than necessary bigger amplification; Particularly, these trsanscondutors utilize compared with necessary more electric current, thus the valuable power resource of waste.

Another problem that is caused by the oscillator structure of Figure 12 is that resonator does not utilize any pattern controlling mechanism (for example, suppressing more higher order mode).As a result, this structure has the trend of the strong high frequency mode of excitation.In this structure, the shortage of pattern control will finally worsen the quality of the sinusoidal signal that is generated, because the existence of a plurality of higher frequency mode makes sinusoidal waveform distortion under the first-harmonic resonance frequency.

For example, can support pattern under as shown in figure 12 λ/2 in theory along the equally distributed equal gain amplifier of the length of resonator structure shown in Figure 12, and other odd harmonic, such as λ, (3/2) λ, (5/2) λ, 3 λ or the like; Particularly, each amplifier can be as the circuit node work of establishing by cable that can support the higher frequency pattern.Like this, the resonator of Figure 12 generates for sinusoidal waveform and is not optimized.This condition is very undesirable for many application.Yet, should be pointed out that because the final use of resonator shown in Figure 12 is to be used for a square wave clock maker basically, thus some more the existence of higher order mode may not can the appreciable impact resonator in the total performance that generates aspect such clock signal.

The applicant sees and recognizes that traditional standing wave oscillation device (SWO) based on the coplanar striplines embodiment can be modified and improvement generates high-quality high frequency sinusoidal signal.The general frequency range of the sinusoidal signal that the SWO that is considered by present disclosure generates comprises the frequency from about 1GHz to 100GHz, but should see, present disclosure is not limited to this on the one hand.According to the of the present invention various embodiment of following further discussion, single mode SWO can be configured to especially dissipate with low-power in these exemplary frequencies range and low phase noise generates sinusoidal signal.Application for a plurality of expections of such oscillator includes but not limited to: comprise radio communication communication system, radar, be used for phase-locked loop (PLL) of various application or the like.

B. quarter-wave coplanar striplines standing wave oscillation device

Figure 13 A and 13B show conduct some basic conception according to the basis of the coplanar striplines standing wave oscillation device of one embodiment of the present of invention.Particularly, Figure 13 A shows quarter-wave (λ/a 4) coplanar striplines SWO 300 basically, and it comprises conductor 300A and the 300B that forms difference coplanar striplines (that is, being similar to the coplanar striplines 100 of Fig. 3 A and 3B).SWO 300 is that the coplanar striplines (label 301) of L forms by length, and an end of this coplanar striplines is by short circuit (Short) 302 terminations, and the other end of line is by by the pair of cross coupled inverters termination as amplifier 304.At present embodiment on the other hand, amplifier 304 can by by the cross-linked trsanscondutor of the NMOS of driven with current sources to being implemented (for clarity to be similar to mode shown in Figure 12, on Figure 13 A, obviously do not show nmos pass transistor and current source, but schematically represent) by cross coupling inverter.Such amplifier forms active positive feedback network, and its DC energy conversion becomes the RF energy and this energy is injected into circuit, with the compensation loss relevant with coplanar striplines.

The standing wave of boundary condition is satisfied in two ends that SWO 300 shown in Figure 13 A is configured to be supported in coplanar striplines, promptly has maximum voltage amplitude swing and online short-circuit end place at the amplifier end place of coplanar striplines and has the no-voltage node.Therefore, based on the possible incentive mode of the coplanar striplines of length L in theory corresponding to L=λ/4+n (λ/2) (for n=0,1,2,3...).In the embodiment of reality,, support that the length L of the reality of incentive mode can be somewhat different than theoretical length for any various reason of following further discussion.The fundamental frequency f of vibration ₀Corresponding to n=0, i.e. f ₀=v/ (4L), wherein v is by the phase velocity that surrounds and constitute the ripple that the material of coplanar striplines determines.

Figure 13 B schematically shows for the voltage and current waveform of the first-harmonic pattern of being supported by SWO 300 along the length of SWO 300, be represented as V (z) and I (z) respectively on figure.The curve chart of Figure 13 B is shown as along the z axle corresponding to the length of SWO, and wherein z=0 is corresponding to the position of amplifier 304, and z=L is corresponding to the position of short-circuit end.Can see easily that from Figure 13 though the left side of voltage amplitude swing V (z) on figure is maximum (z=0), and be reduced to zero during the short-circuit end that moves right (z=L), electric current I (z) is with vary in opposite ways; Being that the left side of electric current on figure is minimum value, and increasing when moving right, is maximum at the short-circuit end place of coplanar striplines.According to an aspect of present embodiment, the output of SWO can be derived (that is, the point of maximum voltage amplitude swing) on amplifier 304, wherein should export by suitable buffer memory, to reduce any load on the SWO.

C. the standing wave oscillation device that has the gain unit of distributed/customization

Based on (λ/4) the coplanar striplines SWO 300 shown in Figure 13 A, an alternative embodiment of the invention is shown in Figure 14 A, it relates to distributed amplification.Yet, should see, in conjunction with the notion of present embodiment discussion can with as discussed here, be implemented according to various other SWO structures of the present invention.Therefore, be right after that be discussed below, relevant concrete example and mainly be provided to be used for illustrative purposes with quarter-wave SWO.

For the ease of explaining present embodiment, the voltage waveform shown in Figure 13 B is reproduced the B in Figure 14.In the embodiment of Figure 14 A, a plurality of amplifiers or " gain unit " 304A, 304B, 304C ... 304D arranges along the length of coplanar striplines.Though Figure 14 A shows four such amplifiers clearly, should see, present invention is not limited in this respect, because in according to SWO of the present invention, can utilize the amplifier of different numbers.In addition, equally spaced being placed though amplifier is schematically represented as along coplanar striplines on Figure 14, present invention is not limited in this respect, is possible because be used for the various positions of amplifier according to different embodiment.In general, should see, correspondence gain according to number and the placement and the amplifier of the amplifier of various embodiment of the present invention can partly depend on the one or more patterns of wanting by the oscillator excitation, at least as following further discussion.

For example, according to the aspect of the embodiment shown in Figure 14 A, the relation between each gain of amplifier can be customized to be approximately along coplanar striplines, arrange relation between the expection voltage amplitude of the standing wave mode of wanting at diverse location place of amplifier thereon.For example, with reference to Figure 14 B, because the voltage amplitude of shown standing wave mode from left to right reduces along the length of coplanar striplines, so each gain G of amplifier ₁, G ₂, G ₃... G _nAlso from left to right reduce (that is, from z=0 to z=L) along coplanar striplines.Like this, in this example, Amplifier Gain is " depending on amplitude ".

In the embodiment shown in Figure 14 A, obtain some benefit of knowing (for example, the frequency response of increase) of distributed amplification, save valuable power resource by customizing each Amplifier Gain simultaneously.Recall in traditional SWO embodiment shown in Figure 12, a plurality of distributed amplifiers are configured to have identical gain, and regardless of the different voltage amplitude at amplifier position place; Therefore, in this traditional structure, amplify, waste sizable energy demonstrably owing to cross.On the contrary,, need less total running current, save the power resource of preciousness thus according to SWO embodiment of the present invention, as to use Figure 14 A that customizes the amplifier that gains similar embodiment compared with the amplifier that uses a plurality of identical gain.

And the amplifier of a plurality of customization gains of the embodiment shown in Figure 14 A is used as the pattern controlling mechanism in addition, to guarantee the vibration under monotype basically (for example corresponding to λ/4).In addition, this traditional structure with the amplifier that uses a plurality of identical gain as shown in figure 12 is opposite, and the latter can support a plurality of other patterns in theory, worsens the sinusoidal quality of the signal that is generated by oscillator thus.

For the embodiment of comparison and contrast Figure 13 A (a lumped parameter amplifier), analyzed the illustrative embodiments of utilizing these SWO of coplanar striplines with about 1500 microns length with Figure 14 A (distributed amplifier).In illustrative embodiments, use four amplifiers at the equal intervals place that is placed on z=0, z=L/4, z=L/2 and z=3L/4 place along coplanar striplines corresponding to Figure 14 A.Recall as discussed abovely, given Amplifier Gain is proportional to the square root of transistor size and the product of the electric current that extracted.The all transistors that use in amplifier have 0.18 micron length.Determine the transistor width and the electric current that extracts by each amplifier of amplifier gain, be respectively as follows:

The amplifier position	Transistor width (micron)	The electric current that is extracted (mA)
			z＝0	22.5	12
z＝L/4	22.5[sin(3π/8)]	12[sin(3π/8)]
			z＝L/2	22.5[sin(π/4)]	12[sin(π/4)]
z＝3L/4	22.5[sin(π/8)]	12[sin(π/8)]

In this embodiment, SWO vibrates with 12.19GHz, and it has 2.09 volts maximum voltage amplitude at the z=0 place.

In the exemplary corresponding to Figure 13 A, the gain of single amplifier 304 is selected as equaling total lumped parameter gain of the distributed amplifier that uses in the embodiment corresponding to Figure 14 A.More specifically, the transistorized length of each of amplifier 304 is 0.18 micron equally, and transistor width is given 22.5[1+sin (3 π/8)+sin (π/4)+sin (π/8)] micron.Similarly, the total electric current by the amplifier conduction is 12[1+sin (3 π/8)+sin (π/4)+sin (π/8)] milliampere.This SWO vibrates with 9.76GHz, and it has 2.27 volts maximum voltage amplitude at the z=0 place.Therefore, though reach higher amplitude, reach obviously higher operating frequency based on the example distributed amplifier SWO of Figure 14 A based on parametric amplifier SWO in the exemplary set of Figure 13 A.

E. utilize the standing wave oscillation device of the coplanar striplines that comes to a point

Figure 15 A shows another embodiment according to (λ/4) of the present invention coplanar striplines SWO 500, and wherein this SWO is based on the coplanar striplines structure that comes to a point with the line parameter that depends on the position.Utilize embodiment SWO 500, shown in Figure 15 of the structure that comes to a point for convenience of explanation, reappearing for (λ/4) voltage and current coplanar striplines SWO, that on Figure 13 B, show on Figure 15 B.Yet, should see, in conjunction with the notion of present embodiment discussion can with as discussed here, be implemented according to various other SWO structures of the present invention.Therefore, relate to quarter-wave SWO basically, be right after the concrete example that is discussed below and mainly be provided to be used for illustrative purposes.In addition, as discussing below, should see, the application that is not limited in SWO, use according to the coplanar striplines structure that comes to a point of the present invention, but can in other device based on CPS, adopt.

1. the coplanar striplines that has the parameter that depends on the position

One embodiment of the present of invention are coplanar striplines along the discrete or continuous function (that is, R (z) and G (z)) of the position of coplanar striplines at being configured to make resistance per unit length R and unit length electricity to lead G.Aspect of present embodiment, this coplanar striplines can be further configured no matter the variation of R and G keeps uniform characteristic impedance, basically to avoid local reflex.

In an exemplary of present embodiment, for example shown in the SWO500 that on Figure 15 A, shows like that, the coplanar striplines structure that utilization comes to a point, wherein width 502 conducts of the interval between coplanar striplines conductor 500A and 500B 504 and/or each conductor 500A and 500B change discretely or continuously along the function of the position z of coplanar striplines.Figure 15 A is the top view (being similar to the view of Fig. 3 B) of the structure 500 that comes to a point, and wherein symbol S (z) expression is correspondingly used at the interval on Figure 15 A 504, and width 502 is correspondingly used symbol W (z) expression.In others, the structure 500 that comes to a point can be similar to the structure that shows on the sectional view of Fig. 3 A; That is, conductor 500A and 500B can be disposed on the dielectric substance above the substrate.Make them depend on the position thereby in fact change along the coplanar striplines parameters R and the G of the length of coplanar striplines, and keep the uniform characteristic impedance of coplanar striplines simultaneously in the structure that comes to a point of Figure 15 A upper conductor 500A and 500B.

Particularly, resistance per unit length R relates generally to the skin effect of knowing, and wherein under higher frequency, charge carrier more approaches the edge and advances, and away from the core of given conductor.When two conductors forming coplanar striplines are more close mutually (, when distance S reduces and/or conductor width W when increasing), be close together mutually near edge or each mobile electric charge of " skin " of conductor, hinder flow of charge thus.Therefore, when conductor was more close mutually, resistance per unit length R increased usually.

The unit length electricity is led G and is related generally to electromagnetic field loss between the substrate of arranging coplanar striplines at conductor and on it.Once more particularly with reference to the coplanar striplines cross section shown in Fig. 3 A, when the conductor of coplanar striplines be moved into mutually away from the time (, when distance S increases and/or conductor width W when reducing) because there is more opportunity the field that the electric current that flows through conductor produces and the substrate interaction of layout coplanar striplines on it; Therefore, the unit length electricity is led G increases.On the contrary, when conductor is more close mutually (, when distance S reduces and/or conductor width W when increasing), reduce usually, so the unit length electricity is led G and is reduced to the loss of substrate.

In a word, should see from above content, coplanar striplines parameters R in above example and G usually and the free of conductors degree change on the contrary; Promptly when conductor is more close mutually, R increases and G reduces; On the contrary, when free of conductors bigger apart from the time, R reduces and G increases.

2. the inference that is used for the parameter that depends on the position of SWO

Propagate for the signal on coplanar striplines, R can be looked at as with current wave and be coupled usually, and G can be looked at as with voltage wave and is coupled, so that introduce separately series connection and shunt loss; Therefore, less R is corresponding to less series loss, and less G is corresponding to less shunt loss.This trading off between series loss R and shunt loss G is because they can minimize for the loss in carrying the coplanar striplines of capable ripple and apply main constraints with the opposite variation of free of conductors degree.Yet, when presenting standing wave on the coplanar striplines, shown in Figure 15 B, can utilize R-G compromise via the structure 500 that comes to a point shown in Figure 15 A, so that utilize and depend on the standing wave amplitude of position, so that reduce loss (also correspondingly strengthening the quality factor q of the device that finally obtains) widely.

For example, can see from Figure 15 B, at the z=0 place, wherein the swing of the voltage amplitude of the SWO 500 of Figure 15 A is a maximum, lower unit length electricity is led G and is caused less power loss to substrate, because be proportional to square multiply by the unit length electricity and leading of voltage (higher relatively at the z=0 place) to the power loss of substrate.Therefore, even have relative higher voltage, by having the coplanar striplines structure that low unit length electricity is led G, still can be reduced to the loss of substrate at this some place.On the other hand, at the z=0 place, Figure 15 B is presented at the electric current that flows through in the conductor of coplanar striplines and is in minimum value; Therefore, any power loss that (that is, because resistance per unit length R) causes because the coplanar striplines conductor not too is a problem, because this power loss is proportional to the resistance per unit length that square multiply by of electric current (relatively low at the z=0 place).Therefore, even be high at this some R of place, because low electric current, it still not necessarily causes very big loss.

Opposite situation is suitable for z=L (that is the short-circuit end of the coplanar striplines that shows) on Figure 15 A.Particularly, shown in Figure 15 B, at this point, voltage is zero, and electric current is in maximum.Therefore, have very big resistance per unit length R at this some place of coplanar striplines and will cause the big loss that causes owing to high electric current, and the unit length electricity is led G because low voltage is not too debatable (that is no-voltage node).

In view of above-mentioned content, one embodiment of the present of invention are at comprising that resistance per unit length R (z) with variation and the unit length electricity that changes lead the quarter-wave SWO of the coplanar striplines of G (z), the zone that wherein low unit length electricity is led (low G) is placed on wherein expects the some z=0 of maximum voltage amplitude, so that be reduced to the power dissipation of substrate.In addition, SWO is configured to make the zone of low resistance per unit length (low R) to be placed on wherein to expect the some z=L of maximum current.The SWO 500 of Figure 15 A provides an example of such arrangement.Usually, according to present embodiment, the voltage and current amplitude that is caused by standing wave, depend on the position is easy to by suitably customized parameter R and G reduce device loss (strengthening with corresponding Q) according to fixing position amplitude.

The coplanar striplines structure of utilizing in present embodiment (and other embodiment) that comes to a point can be implemented with many diverse ways.For example, according to an aspect, the total length of coplanar striplines can be divided into each segmentation of the equal length or the variation length of dispersed number, each segmentation has different R and G, wherein L and C remain constant, with maintenance characteristic impedance uniformly basically, thereby avoid local reflex effectively.Alternatively, the coplanar striplines structure may be implemented as has conductor separation and the width that comes to a point gradually, so that R and G gradually change with the position along coplanar striplines, keeps characteristic impedance uniformly basically simultaneously.

Figure 16 comprises that demonstration is according to characteristic impedance Z one embodiment of the present of invention, that be used for changing along being with line change R and G the band line not really bigly ₀The curve chart and the corresponding exemplary coplanar striplines structure 505 that comes to a point of method.According to an aspect of present embodiment, the curve chart of Figure 16 can be from being edited by the data that obtain based on the width W that changes band line conductor with along the Computer Simulation (for example, Sonnet EM) of the interval S band line length, between band line conductor.Therefore, the trunnion axis of the curve chart of Figure 16 is represented width W, the interval S between the vertical axis representative band line conductor of curve chart.

The curve chart of Figure 16 comprises three examples " constant characteristic impedance outline line " Z _0,1, Z _0,2And Z _0,3Curve; Particularly, each these outline lines representative is used to change different constant characteristic impedances, wherein a Z of the numerical value of W and S _0,3＞Z _0,2＞Z _0,1Figure 16 also comprises three examples " loss outline line " (R ₁, G ₁), (R ₂, G ₂) and (R ₃, G ₃) curve, wherein the reflection of each loss outline line be used to change W and S numerical value for the constant value of R with for the corresponding constant value of G.Though the curve chart of Figure 16 is expressed as the single line of the identical constant value of representing R and G to each loss outline line, is inequality along the R of given loss outline line and each value of G in fact, in any case but be quite approaching mutually.Therefore, on the curve chart of Figure 16, suppose to be actually identical for the R of each loss outline line and the numerical value of G, this is reasonably being similar to for the actual design purpose.

As shown in figure 16, because R-G discussed above is compromise, increases W or S and cause the R that reduces and G (that is R, of increase ₃＞R ₂＞R ₁＞and G ₃＜G ₂＜G ₁).Yet, characteristic impedance Z ₀Increase with increasing S, but reduce with increasing W.Therefore, for reach the low G that approaches the z=0 place and the low R at z=L place so that reduce loss earth effect Z not really ₀, according to a Z shown in Figure 16 ₀Outline line, coplanar striplines conductor from z=0 to z=L, can be broadened simultaneously and mutually away from.

For above-mentioned notion is described, from characteristic impedance Z curve chart, that have substantial constant of Figure 16 _0,2The coplanar striplines structure that comes to a point be looked at as an example.Should see that the basic methods of this example is as other characteristic impedance outline line of discussing below that works and being applied to similarly representing the characteristic impedance of wanting of the device that is used for finally obtaining.

Particularly, with reference to the constant characteristic impedance outline line Z on Figure 16 _0,2, three some A, B and C are along Z _0,2Outline line is identified in this outline line and loss outline line (R ₃, G ₃), (R ₂, G ₂) and (R ₁, G ₁) place, corresponding crosspoint.As in the example of Figure 16, showing, corresponding to the size W of an A (being high R, low G) _AAnd S _ABe used in the part that the band line 505 that comes to a point centers on z=0, corresponding to the size W of a B _BAnd S _BBe used in around the part at middle part of band line, and corresponding to the size W of a C (promptly low R, high G) _CAnd S _CBe used in band line part around z=L.

Though above-mentioned example utilization is along characteristic impedance outline line Z _0,2Three reference point A, B and C determine along the corresponding size of the coplanar striplines structure 505 that comes to a point, but should see, present invention is not limited in this respect; Promptly any several points of destination along given characteristic impedance outline line all can be used for definite corresponding size along the coplanar striplines that comes to a point in theory.Particularly, along with the number of described point increases, the coplanar striplines that comes to a point that finally obtains is a coplanar striplines along the continuous function of the position z of band line as wherein R and G basically more and more.Yet, should see, in fact along any a limited number of point of given impedance roller profile, the structure that comes to a point piecemeal cause R and G along the band line discretely (that is, with piecemeal mode) change.

Figure 17 further shows such notion that changes piecemeal.Particularly, Figure 17 comprises the characteristic impedance Z that shows that representative is constant ₀The W-S space of curve of exemplary impedance outline line in curve chart (should be pointed out that the W-S axle on the curve chart of Figure 17 is exchanged from the axle of Figure 16).Five points (1,2,3,4 and 5) selected along this outline line, corresponding to for five different pieces of the coplanar striplines structure 505 that comes to a point piecemeal or each W and the S size of segmentation, it directly is presented at below the curve chart of Figure 17, and (expression is to the size W of the example of segmentation 5 on Figure 17 ₅And S ₅).Though in the example of Figure 17, select five points, also should see, can select different number points of destination in other embodiments.As on Figure 17, show qualitatively like that, the length of the z axle of each segmentation 1-5 of the coplanar striplines that the edge comes to a point piecemeal can or not necessarily identical with one or more other segmentations of this band line; Particularly,, can be determined (following at length discuss) by mathematical routine, and be determined by experiment alternatively and regulate with respect to the optimal allocation of each segmentation 1-5 of the coplanar striplines that comes to a point according to various embodiment.

More specifically, in some embodiment of the structure that comes to a point piecemeal shown in Figure 16 and 17, loss factor can prop up specific corresponding length and the position that fits over each segmentation in the structure piecemeal.For example, in one embodiment, in order to make total loss of the structure come to a point minimize, each segmentation can be placed on given position z, and under the situation of the standing wave voltage and current amplitude that provides this position, this will be created in the minimum local loss at z place.

Yet, because the standing wave amplitude in the z territory (promptly, V (z) and I (z)) depend on the coplanar striplines structure itself that comes to a point (before making up the band line, being unknown therefore), it seems from the viewpoint in z territory, the design of the band line that comes to a point of power dissipation optimalization and to make up more or less be challenging usually needs time-consuming and the high alternative manner of cost perhaps.In view of above-mentioned content, the applicant sees and recognizes, can design and greatly convenient design and structure for the band line structure that comes to a point by the viewpoint consideration from the θ territory, and wherein θ is the phase place of ripple.

Particularly, as following discussion at length, for actual purpose, the standing wave voltage and current amplitude in the θ territory can be looked at as simple sine (supposing weak loss); Therefore, the loss analysis that is used to design is simplified in the conversion meeting that applies from the z territory to the θ territory greatly.Designed the structure that comes to a point piecemeal in the θ territory after, can apply inverse transformation, being presented on the design parameter in the z territory, this size for the reality of the physical layout of the structure that obtains being used to the come to a point section length of z axle (that is, along) is necessary.In the following discussion, elaborate to step this process one by one.

Present the total time averaging loss P in common (depending on the position) coplanar striplines that comes to a point single standing wave mode, that have constant characteristic impedance thereon _DissBe given:

$P_{\mathrm{diss}}={\∫}_0^L\{\frac{1}{2}R\left(z\right)I^2\left(z\right)+\frac{1}{2}G\left(z\right)V^2\left(z\right)\}\mathrm{dz}---\left(1\right)$

Wherein L is the horizontal span of line, and I (z) and V (z) are electric current and the voltage amplitudes at the standing wave mode at position z place, and R (z) and G (z) are unit length series resistance and shunt conductance at the z place.In order to obtain the line that comes to a point of minimal losses, need under the compromise constraints of R-G discussed above, find the P that makes in the formula (1) _DissMinimized R (z) and G (z).Yet, the integration in the very difficult estimation formulas (1), because I (z) and V (z) they are unknown in advance, this is because they depend on the physical structure of the band line that also is not determined.Therefore, certain argument in a circle appears in the design process in z territory; Particularly, need time-consuming alternative manner, make that optimization procedures is very complicated and possibility is of a high price.

According to one embodiment of the present of invention,, the estimation of formula (1) is simplified widely by wherein replacing the conversion of integration variable z with the phase theta of ripple.At first, consider to have the structure that comes to a point piecemeal of the uniform segmentation of infinite decimal purpose.This piecemeal each even segmentation of structure have length d z and identical characteristic impedance Z ₀Advance infinitesimal uniform line segmentation between z and z+dz, ripple stands the infinitesimal phase change of d θ, and wherein d θ and dz interrelate by d θ=β (z) d θ.Here β (z) is the capable wave propagation constant in this infinitesimal even segmentation, and is provided by the formula of being familiar with:

$\mathrm{\β}\left(z\right)=\mathrm{\ω}/v\left(z\right)=\mathrm{\ω}\sqrt{L\left(z\right)C\left(z\right)},---\left(2\right)$

Wherein $v\left(z\right)=1/\sqrt{L\left(z\right)C\left(z\right)}$ Be the phase velocity of the ripple in this infinitesimal homogeneous section, L (z) and C (z) are unit length inductance and the electric capacity in this infinitesimal homogeneous section, and ω is a model frequency.Substitution β (z)=d θ/dz in above relational expression, we obtain the following relational expression between θ and z:

$\mathrm{d\θ}=\mathrm{\ω}\sqrt{L\left(z\right)C\left(z\right)}\mathrm{dz},$ Or (3)

$\mathrm{\θ}\left(z\right)=\mathrm{\ω}{\∫}_0^z\sqrt{L\left(z^{\′}\right)C\left(z^{\′}\right)}{\mathrm{dz}}^{\′}---\left(4\right)$

Equally, under the situation of uniform line, θ (z) is reduced to familiar $\mathrm{\ω}\sqrt{\mathrm{LC}}z=\mathrm{\βz},$ Wherein β is phase constant 2 π/λ.But in heterogeneous line, wave phase speed $v\left(z\right)=1/\sqrt{L\left(z\right)C\left(z\right)}$ Can change with z, so θ (z) is not a linear function.

It is useful being mapped to θ (z) from z, because have constant characteristic impedance Z ₀Any common transmission line in, if the weak loss of hypothesis, the voltage and current amplitude that then is used for standing wave mode usually is the sine of phase theta (z).Therefore, these amplitudes can be rewritten as:

V(z)＝V ₀cos(θ(z)) (5)

I(z)＝I ₀sin(θ(z)). (6)

By the parametrization of θ, can be rewritten as from the power dissipation formula of formula (1):

$P_{\mathrm{diss}}={\&Integral;}_0^{\mathrm{\&pi;}/2}\{\frac{1}{2}{\left(I_0\sin \mathrm{\&theta;}\right)}^2{R}_{\mathrm{\&theta;}}\left(\mathrm{\&theta;}\right)+\frac{1}{2}{\left({\mathrm{<figure-callout\; id="0"\; label="V"\; filenames="A20048002759300611.png,A20048002759300613.png"\; state="\{\{state\}\}">V</figure-callout>}}_0\cos \mathrm{\&theta;}\right)}^{2}G\left(\mathrm{\&theta;}\right)\}\mathrm{d\&theta;}---\left(7\right)$

Suppose that line length is selected as producing pi/2 phase shift (for quarter-wave SWO basically).Here R _θ(θ) and G _θ(θ) be defined in the series connection and the shunt loss of the unit radian phase shift at θ place, they can interrelate by following formula and R (z) and G (z):

R _θ(θ)dθ＝R(z)dz (8)

G _θ(θ)dθ＝G(z)dz (9)

Wherein the relation between dz and d θ can obtain from formula (3) or (4).Integration in formula (7) is easier relatively, because electric current and voltage standing wave(VSW) waveform usually are known sines in the θ territory, and no matter the concrete band line structure that comes to a point.

In view of above-mentioned content, based on the concrete example of the structure piecemeal of above notion in conjunction with Figure 17 discussion can be used for illustrating according to one embodiment of the present of invention, be used to use the optimization procedures of z territory to the conversion in θ territory.Refer again to characteristic impedance outline line shown in Figure 17, according to Z ₀=25 ohm illustrative properties impedance is carried out the emulation of loss parameter for five points (some 1-5) along outline line.Following table 2 provides the result of this emulation, and it shows for the relevant W-S yardstick of the band line of each segmentation and corresponding loss parameters R _θAnd G _θ

Z 0Point on the outline line	W(μm)	S(μm)	R θ(mΩ/deg)	G θ(μS/deg)
					1	75	20	12.4	3.23
2	80	30	9.72	4.00
					3	85	50	6.16	7.96
4	90	100	3.26	19.0
					5	90	120	1.96	25.3

Table 2

In case obtain the loss parameter in θ territory for each segmentation in the middle of five segmentations, just can determine that total loss that each segmentation should be the structure that comes to a point minimizes the phase change amount of contribution.According to an embodiment, this can estimate which segmentation in the middle of five segmentations makes the loss in the unit phase shift at this partial points place minimize and finish by each some place of (that is 0≤θ≤pi/2) in the θ territory.The loss of unit phase shift is the integrand of the loss integration in the formula (7):

$\frac{{\mathrm{dP}}_{\mathrm{diss}}}{\mathrm{d\&theta;}}=\frac{1}{2}{\left(I_o\sin \mathrm{\&theta;}\right)}^2{R}_{\mathrm{\&theta;}}\left(\mathrm{\&theta;}\right)+\frac{1}{2}{\left(V_o\cos \mathrm{\&theta;}\right)}^2{G}_{\mathrm{\&theta;}}\left(\mathrm{\&theta;}\right).---\left(10\right)$

With reference to Figure 17, for z-θ conversion is described, the z axle also is marked as the θ axle, and transition point (θ ₁, z ₁), (θ ₂, z ₂), (θ ₃, z ₃) and (θ ₄, z ₄) be indicated on the boundary between each segmentation.Transition point θ between each segmentation ₁, θ ₂, θ ₃And θ ₄Can by means of formula (10) by make the loss of unit phase shift of a segmentation equal next segmentation the unit phase shift loss and calculated.θ for example ₁Can be calculated as:

$\frac{1}{2}{\left(I_o\sin {\mathrm{\&theta;}}_1\right)}^2{R}_{\mathrm{\&theta;},1}+\frac{1}{2}{\left(I_o{Z}_o\cos {\mathrm{\&theta;}}_1\right)}^2{G}_{\mathrm{\&theta;},1}=\frac{1}{2}{\left(I_o\sin {\mathrm{\&theta;}}_1\right)}^2{R}_{\mathrm{\&theta;},2}+\frac{1}{2}{\left(I_o{Z}_o\cos {\mathrm{\&theta;}}_1\right)}^2{G}_{\mathrm{\&theta;},2}$

R wherein _{θ, 1}And R _{θ, 2}Be respectively series resistance (from table 2) for the unit phase shift of segmentation 1 and 2, and G _{θ, 1}And G _{θ, 2}It is respectively shunt conductance (once more from table 2) for the unit phase shift of segmentation 1 and 2.For concrete example given in the table 2, this calculates and produces θ ₁=22.9 °.So, for θ＜θ ₁=22.9 °, segmentation 1 has the loss of lower unit phase shift compared with segmentation 2, and for θ＞θ ₁=22.9 °, segmentation 2 has the loss of lower unit phase shift compared with segmentation 1.Therefore, in an exemplary design, segmentation 1 should approximately cover first 22.9 ° of the band line structure that comes to a point, and at 22.9 ° of points, should carry out the transition to segmentation 2.The phase place span of other segmentation and corresponding transition point θ ₂, θ ₃And θ ₄Can be determined similarly; For example, as above for θ ₂Application of formula (10) finds θ ₂It is 39.8 °, so the phase place span of segmentation 2 approximately is 17 ° of (that is θ, ₂-θ ₁

Obtain transition point (therefore, obtaining the span of each segmentation) between each segmentation in the θ territory according to formula (10), these numerical value are transformed the z territory then, to produce corresponding transition point z ₁, z ₂, z ₃And z ₄(seeing Figure 17), thereby and each physical length that produces the different segmentations that design piecemeal.For this reason, with reference to Figure 17, the physical length of i segmentation (i=1,2,3,4,5) is by the Δ z in the z territory _i=z _i-z _I-1And be presented, this is corresponding to the phase place span Δ θ in the θ territory _i=θ _i-θ _I-1By using above formula (3), these two amounts are provided by following formula:

${\mathrm{\&Delta;\&theta;}}_i=\mathrm{\&omega;}\sqrt{L_i{C}_i}{\mathrm{\&Delta;z}}_i---\left(11\right)$

L wherein _iAnd C _iBe unit length inductance and the electric capacity for the i segmentation, they are known from EM emulation.Therefore, formula (11) can be used for determining the length of each segmentation in the z territory, and finishes the conversion of the design from the θ territory to the z territory.

According to another aspect of present embodiment, as another optional step in the process of above general introduction, in case determined the physical length of each segmentation according to above program, near transition point z ₁, z ₂, z ₃And z ₄The band line layout of reality can smoothedization so that the band line is further approximate or become the continuous basically structure that comes to a point.Therefore the numerical value of W and S become by the interpolation of the point of the original selection of emulation.As mentioned above, should see that many more for the point/segmentation of design alternative and emulation piecemeal, the numerical value of these interpolations just becomes and is optimization more.

At this moment, the SWO of the band line that comes to a point for use design, the design that comes to a point piecemeal can be by schematically emulation, determining needed any adjusting in the design, thereby consider boundary condition shown in Figure 15 A, relevant with amplifier 304.In fact the transistor of amplifier introduces additional phase shift in the phase shift of coplanar striplines itself.So if SWO is to use covering to come emulation corresponding to the quarter-wave coplanar striplines of target frequency, then Shi Ji frequency of oscillation may be lower than this target.

Therefore, aspect of present embodiment, for the loading effect of compensated amplifier, the band line structure can be shortened, till the frequency of oscillation of emulation reaches target frequency.For example, if target oscillation frequency is 20GHz, and if the frequency of oscillation of emulation before the phase shift of removing 15 ° of sizes from the band line, do not reaching 20GHz, then these 15 ° can be eliminated in layout in the beginning from the band line.In above concrete example, for the influence of considering that amplifier loads, the phase place span parameter Δ θ of segmentation 1 in conjunction with Figure 17 and table 2 discussion ₁Can shorten to 7.9 ° from 22.9 °.This modification is shown in Figure 17 A, wherein removes the part 507 of the segmentation of representing with " X " that beats hacures and intersection 1 from the band line.

In a word, should see, as the above concrete example general introduction that provides in conjunction with Figure 17 and table 2, according to one embodiment of the present of invention, the coplanar striplines structure Design program process that is used for coming to a point piecemeal mainly is provided to be used for illustrative purposes, present disclosure is not limited to this example.Particularly, with reference to the method flow diagram shown in the figure 17B, can be defined as follows usually: the characteristic impedance Z of the structure of 1) selecting to come to a point piecemeal as the outstanding notion on this basis of designing program ₀2) selection will be included in the number (that is the number of the point in the similar outline line curve chart shown in selection and Figure 16 and 17) of the segmentation in the structure that comes to a point piecemeal; 3), determine loss parameters R in the θ territory according to formula (8) and (9) for each segmentation _θAnd G _θ4) determine transition point between each segmentation in the θ territory according to formula (10); And 5) according to formula (11) transition point in the θ territory (or phase place span) is transformed to the z territory, so that determine each physical length of different segmentations.As optional additional step,, just can seamlessly transit a little via interpolation for width W and interval S in case determine the physical length of each segmentation.As another option,, can come compensated amplifier loading effect (for example, shown in Figure 17 A) by the total length that shortens the band line for SWO design based on the structure that comes to a point piecemeal.

Should see, though Figure 15 A, 16,17 and the 17A exemplary coplanar striplines structure that comes to a point that shows be based on basically (λ/4) coplanar striplines SWO, present invention is not limited in this respect.Concrete, having the transmission line structure that comes to a point that various sizes distribute can be implemented, to be used for the device that wherein different R and/or G numerical value are that want, different type at the difference place along device.Usually, the transmission line structure that comes to a point according to various embodiment of the present invention can be designed to have conduct along the R of the function of the position z of transmission line and/or any number of G, to be used for various application.

F. have that Q strengthens and phase velocity reduces (λ/4) coplanar striplines SWO of feature

Figure 18 A, 18B and the photo of 18C demonstration according to three of various embodiment of the present invention different (λ/4) coplanar striplines standing wave oscillation devices.Particularly, Figure 18 A show the circuit die of even coplanar striplines SWO 510 top view (to small part based on the embodiment shown in Figure 13 A), and Figure 18 B and 18C show the circuit die of different come to a point coplanar striplines SWO 512 and 514 corresponding top view (to small part based on the embodiment shown in Figure 15 A).At each among the coplanar striplines SWO of these (λ/4), be displayed on the top of figure in the short circuit 302 between the conductor of band line at position z=L place, and for one or more amplifiers (being similar to the amplifier 304 shown in Figure 13 A and the 15A), the tie point at position z=0 place is indicated on the bottom of figure.

Each SWO shown in Figure 18 A, 18B and the 18C is by using 0.18 micrometre CMOS technology manufactured, and on sectional view, each SWO also comprises one or more conductive strips arrays 62, it is similar to above those conductive strips arrays of discussing in conjunction with Fig. 5 A, 5B, 8,10 and 11 (on Figure 18 A, 18B and 18C as top view, array 62 is total is represented as shadow region below the conductor of coplanar striplines).As above in conjunction with these figure early discuss like that, the existence of the array of conductive strips is easy to realize that Q enhancing and phase velocity reduce in SWO.On the other hand, the loss that is realized by the structure that comes to a point of Figure 18 B and 18C reduces to help in these embodiments further Q to strengthen.

In each SWO shown in Figure 18 A, 18B and the 18C, want a some place in the structure of relatively low R to tend to increase series resistance therein in the very big conductor block at short circuit 302 places.Therefore, in one embodiment, each SWO also can be included in conductive metal sheet 63 on the plane identical with one or more array 62 (for example, below short circuit 302, represent as the solid line white region on the figure), wherein short circuit 302 is connected to dull and stereotyped 63 by a plurality of through holes.In fact this arrangement increases the conductor block in the zone of short circuit 302, reduces the series resistance in this zone thus.

In the embodiment that comes to a point of Figure 18 B, compare with the even embodiment of Figure 18 A, cause proportional longer short circuit 302 in the bigger conductor separation in z=L place.This longer short circuit 302 tends to increase series resistance with respect to the structure shown in Figure 18 A, partly damages the benefit of the structure that comes to a point thus potentially.In view of above-mentioned content, the embodiment of Figure 18 C provides the structure that comes to a point of replacement, and wherein the tapering that comes to a point with the line conductor is modified to the length that makes the length of short circuit 302 be similar to the homogeneous texture shown in Figure 18 A.

In order comparatively to measure uniformly and the performance of the structure that comes to a point, the SWO shown in Figure 18 A, 18B and the 18C is manufactured into and makes each SWO have about 25 ohm characteristic impedance Z ₀, so that be operated in about 15GHz.Each device has about 420 microns total band line length L.For the even embodiment of Figure 18 A, the width of each conductor of band line approximately is 85 microns, and the interval between conductor approximately is 50 microns.The structure that comes to a point for Figure 18 B, the scope of conductor width is from about 75 microns to about 90 microns near z=L near the z=0, and the scope at the interval between the conductor is from about 20 microns to about 120 microns near z=L near the z=0 (for example, seeing Table 2).The experiment measuring value confirms, realizes strengthening (for example, device has about 39 quality factor q uniformly, and the device that comes to a point has about 59 quality factor q) with respect to about 50% Q of the even device of Figure 18 A in the device that comes to a point of Figure 18.

G. the standing wave oscillation device of low-loss frequency-tunable

In another embodiment of the present invention, thereby the coplanar striplines embodiment of SWO can be configured to have to be optimized and reduces the frequency regulation capability that loss reduces power consumption.For example, according to an embodiment, thereby SWO can implement with capacitance per unit length C that is used for changing coplanar striplines and the one or more variable capacitors (" varactor ") that change frequency of oscillation (the phase velocity v that relates to frequency and wavelength is inversely proportional to the square root of product LC).Aspect of this embodiment, the placement of one or more varactors is optimized on the coplanar striplines, to keep the energy-conservation power of significant frequency adjustable, reduces any loss that is caused by varactor simultaneously.

Figure 19 A and 19B show that the different of varactor that can be used in according to the SWO of one embodiment of the present of invention represent.Particularly, Figure 19 A shows two conductor 300A being connected coplanar striplines and the varactor 400 between the 300B, wherein this varactor is implemented as pair of NMOS transistors, their grid is coupled to the corresponding conductor of coplanar striplines, and their source electrode and drain electrode are coupling in together and are connected to bias voltage Vbias.Figure 19 B shows the schematically illustrating of another equivalence of varactor 400, and wherein variable capacitance 400A is shown as the resistance 400B that is connected in series to the relevant inherent loss of representative and varactor 400.

Refer again to Figure 13 A and the 13B that show exemplary (λ/4) coplanar striplines SWO, should see, in according to the SWO of various embodiment of the present invention, implement one or more varactors 400, can influence the power consumption that causes owing to the loss relevant with varactor resistance 400B.Particularly, if the maximum voltage amplitude that varactor is placed among the SWO (is for example swung point, z=0 in Figure 13 A) locate, then the energy-conservation power of frequency adjustable is very big, but because the loss that causes in the ohmically relative higher voltage of varactor may be sizable.On the other hand, varactor is placed on the short-circuit end (for example, the z=L in Figure 13 A) of close SWO,, will causes low loss, but the while only has very little or do not have the frequency tuning ability owing on varactor resistance, have only seldom or do not have voltage.

Yet the applicant sees and recognizes, aspect some manufacturing process at least, though because the loss that varactor resistance causes from maximum voltage amplitude (promptly, z=0) (that is, substantial linear ground reduces in the time of z=L), but same situation is false for the frequency tuning ability to move to voltage node; That is, (that is, keeping constant basically during 0＜z≤L/2) from maximum voltage amplitude point up to half distance of about voltage node based on the frequency tuning ability of varactor position.(that is, L/2＜z≤L), when near voltage node, the frequency tuning ability begins to descend significantly, does not have the frequency tuning ability when voltage node after half point.Therefore, in some processing procedure, though point out along the varactor position of resonator and because the relation of substantial linear is arranged between the loss of varactor resistance, between the varactor position of resonator and frequency tuning ability, very big non-linear relation is being arranged.

In view of above-mentioned content, according to one embodiment of the present of invention, by varactor being placed near the half point (for example, z ≈ L/2 on Figure 13 A) between maximum voltage amplitude and the voltage node (no-voltage), this phenomenon is utilized in coplanar striplines SWO.Aspect of present embodiment, by varactor being placed near the half point but between half point and voltage node (for example, L/2＜z on Figure 13 A＜＜L), the varactor position can be optimized.Like this, very big frequency tuning ability is held, and significantly reduces simultaneously to result from the loss of varactor resistance.In various embodiments, aforesaid varactor can and be different from the SWO structure of (λ/4) discussed here coplanar striplines SWO and is utilized in conjunction with even or non-homogeneous (for example, coming to a point) coplanar striplines SWO discussed here.In yet another embodiment, can be used for providing frequency tunability along the distribution of the varactor of coplanar striplines, relax simultaneously with because the relevant any potential influence of loss that the loading of lumped parameter varactor causes.

H. closed loop standing wave oscillation device

Another example of the present invention is at a kind of closed loop based on toroidal cavity resonator coplanar striplines embodiment (for example circular) standing wave oscillation device.In the one side of present embodiment, as discussing in more detail below, the cross coupled amplifier structure is utilized to by using the particular resonator topology to be convenient to single-mode operation, to avoid causing very big loss in oscillator.

More specifically, Figure 20 A shows the closed loop SWO 700 according to one embodiment of the present of invention, and it schematically is represented as annulus.SWO 700 utilizes at least two amplifier 702A and 702B (promptly, two pairs of cross-couplings inverters), loss in its bucking circuit, an and closed loop coplanar striplines 704 (comprising conductor 704A and 704B), it has total path L, form the standing wave that satisfies boundary condition V ()=V (+2 π) thereon, wherein  is any reference angle from the given reference radius r meter of loop configuration.This boundary condition cause L=2 π λ=n λ (for n=1,2, the possible energy model of 3...) locating, wherein r be the ring radius.Fundamental frequency f corresponding to the vibration of n=1 ₀Provided by v/L then, wherein v is a phase velocity.

The amplifier 702A of SWO 700 shown in Figure 20 A and 702B interconnected implemented a kind of pattern control technology that is used for oscillator effectively.Particularly, arrive some B1 to some B2 and some T2, guarantee that port T1-T2 and B1-B2 are in opposite phase (180 °), suppress all even mould harmonic waves thus by tie point T1.This even number node inhibition makes port L1-L2 always keep " peace and quiet ", i.e. the no-voltage node.By the power supply tap that is used for amplifier to this port with as common-mode voltage, port R1-R2 is forced into and is the no-voltage node.

Figure 20 B shows an example of the physical layout be used for the toroidal cavity resonator schematically represented at Figure 20 A.In the layout of Figure 20 B, be used to implement interconnected between amplifier 702A that even mould suppresses and the 702B be placed with adjacent to each other so that introduce compared with the insignificant delay of deliberate delay in annular coplanar striplines.Particularly, the shape of annular coplanar striplines is kept its topological novariable simultaneously by distortion, and like this, port T1-T2 and B1-B2 are near each other physically, to reduce the interconnected loss between port.That Figure 21 shows is relevant with the notion of Figure 20 B, have another layout of the closed loop SWO of " quatrefoil " shape, and like this, amplifier 702A and 702B are placed with adjacent to each other once more.Aspect of embodiment shown in Figure 21, four λ/4 segmentations of coplanar striplines are coupling in together, to form complete ring.

Figure 22 A and 22B demonstration utilize f by use _TThe simulation result of 10GHz closed loop SWO that is about transistorized silicon-gallium (Si-Ge) process implementing of 50GHz.Shown in Figure 22 A, each " ring port " (for example, the T1-T2 of Figure 20 A and B1-B2) swings when oscillator has 1.2 volts differential voltage when 1.5 volts power supplys extract about 5mA direct current.Shown in Figure 22 B, behind a certain initial ringing, " quiet port " (for example, the L1-L2 of Figure 20 A) kept quite, and just as was expected.

According to the each side of present embodiment, more than also can be utilized to realize various closed loop coplanar striplines SWO structures in conjunction with a plurality of notions of quarter-wave SWO embodiment discussion.For example, in the each side of present embodiment, the distributed amplification scheme of customization and variable element coplanar striplines structure (coplanar striplines that for example, comes to a point) one of them or the two can be used in closed-loop structure.In others, coplanar striplines structure that comes to a point (that is, having R and the G that depends on the position) and conductive strips array one of them or the two can be utilized to be convenient to that Q strengthens and phase velocity reduces.Aspect another, low-loss frequency tuning ability can be implemented in the such SWO that uses one or more varactors of suitably placing.

III. conclusion

After describing several illustrative embodiment like this, should see that those skilled in the art will easily expect various changes, modification and improvement.Such change, modification and improvement are intended as the part of present disclosure, and plan to belong in the spirit and scope of present disclosure.Though some example given here involves the concrete combination of function or structural unit, should see, these functions and unit can otherwise be combined according to the present invention, to finish identical or different purposes.Particularly, do not plan to be excluded in conjunction with step, element and the feature of an embodiment discussion from the similar effect of other embodiment or other.Therefore, above-mentioned explanation and accompanying drawing be as just example, and do not plan to be used for limiting the present invention.

Claims (89)

1. a standing wave oscillation device has frequency f with generating ₀At least one voltage standing wave(VSW), this oscillator comprises:

A coplanar striplines comprises two conductors and has the length L that equals or be approximately equal to quarter-wave (λ/4) that wherein λ is phase velocity and the frequency f by the ripple that constitutes this at least one voltage standing wave(VSW) ₀Interrelate; And

Be disposed at least one amplifier between the conductor at first end of this coplanar striplines,

Wherein said two conductors are joined together at the second end place of this coplanar striplines, to form short circuit.

2. the oscillator of claim 1, wherein this at least one amplifier comprises that at least one is to cross-linked inverter.

3. the oscillator of claim 1, wherein this at least one amplifier comprises and being used for the distribute device of this at least one Amplifier Gain of the mode along the length variations of coplanar striplines.

4. the oscillator of claim 1 also comprises the device of the oscillation mode that is used for control generator.

5. the oscillator of claim 1, wherein this at least one amplifier comprises a plurality of amplifiers of arranging along the length of coplanar striplines.

6. the oscillator of claim 5, wherein said a plurality of amplifiers comprise at least two amplifiers that are configured to have different gains.

7. each amplifier in the middle of the oscillator of claim 6, wherein said a plurality of amplifiers be configured to have with described a plurality of amplifiers in the middle of the different gain of another amplifier.

8. the oscillator of claim 6, each gain of wherein said a plurality of amplifiers is configured to relevant with the amplitude of this at least one voltage standing wave(VSW).

9. at least one voltage standing wave(VSW) of each Amplifier Gain and this in the middle of the oscillator of claim 8, wherein said a plurality of amplifiers is relevant in the amplitude of the three unities, and described amplifier is disposed in this place along coplanar striplines.

10. the oscillator of claim 5, wherein said a plurality of amplifiers are equal intervals along the length of coplanar striplines basically.

11. the oscillator of claim 10, each amplifier in the middle of wherein said a plurality of amplifiers be configured to have with described a plurality of amplifiers in the middle of the different gain of another amplifier.

12. the oscillator of claim 10, each gain of wherein said a plurality of amplifiers is configured to relevant with the amplitude of this at least one voltage standing wave(VSW).

13. at least one voltage standing wave(VSW) of each Amplifier Gain and this in the middle of the oscillator of claim 12, wherein said a plurality of amplifiers is relevant in the amplitude of the three unities, described amplifier is disposed in this place along coplanar striplines.

14. being configured to have along the resistance per unit length R and the unit length electricity of the length variations of this coplanar striplines, the oscillator of claim 1, wherein said coplanar striplines lead G.

15. the oscillator of claim 14, wherein said coplanar striplines are configured to have the characteristic impedance uniformly basically along the length of this coplanar striplines.

16. the oscillator of claim 14, wherein said coplanar striplines is configured to a plurality of segmentations, and each segmentation in the middle of wherein said a plurality of segmentations has different resistance per unit length R and leads G with different unit length electricity.

17. the oscillator of claim 14, wherein said coplanar striplines are configured to make resistance per unit length R and unit length electricity to lead the length basically continuously variation of G along this coplanar striplines.

18. the oscillator of claim 14, wherein the width of the interval between described two conductors and conductor is along the length variations of coplanar striplines.

19. the oscillator of claim 14, it is littler compared with the second end place at this coplanar striplines at the first end place of this coplanar striplines that wherein said coplanar striplines is configured to make the unit length electricity lead G, and make resistance per unit length R littler compared with the first end place at this coplanar striplines at the second end place of this coplanar striplines.

20. the oscillator of claim 19, wherein said at least one amplifier comprise a plurality of amplifiers of arranging along the length of coplanar striplines.

21. the oscillator of claim 20, each gain of wherein said a plurality of amplifiers is configured to relevant with the amplitude of this at least one voltage standing wave(VSW).

22. at least one voltage standing wave(VSW) of each Amplifier Gain and this in the middle of the oscillator of claim 21, wherein said a plurality of amplifiers is relevant in the amplitude of the three unities, described amplifier is disposed in this place along coplanar striplines.

23. the oscillator of claim 22, wherein said a plurality of amplifiers are equal intervals along the length of coplanar striplines basically.

24. the oscillator of claim 1, wherein said two conductors comprise first conductor and second conductor parallel to each other basically and that be orientated along first direction basically, and wherein this oscillator also comprises:

Be arranged to the conductive strips near a plurality of straight lines basically of coplanar striplines, described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.

25. being configured to have along the resistance per unit length R and the unit length electricity of the length variations of coplanar striplines, the oscillator of claim 24, wherein said coplanar striplines lead G.

26. the oscillator of claim 1 also comprises at least one frequency adjustment parts, the frequency f that is used for regulating this at least one voltage standing wave(VSW) ₀

27. the oscillator of claim 26, wherein these at least one frequency adjustment parts comprise by approximate first end of coplanar striplines and at least one varactor of the midpoint between second end of being arranged in.

28. the oscillator of claim 27, wherein this at least one varactor is disposed between the mid point and second end of coplanar striplines.

29. a standing wave oscillation device with generating at least one voltage standing wave(VSW), comprising:

A closed loop coplanar striplines, it comprises two conductors; With

Be disposed at least one amplifier between two conductors at the primary importance place,

Wherein said two conductors are joined together at the second place place that is different from primary importance, so that the no-voltage node for this at least one voltage standing wave(VSW) to be provided.

30. the oscillator of claim 29, wherein this at least one amplifier comprises and being used for the distribute device of this at least one Amplifier Gain of the mode that changes along coplanar striplines.

31. the oscillator of claim 29 also comprises the device of the oscillation mode that is used for control generator.

32. the oscillator of claim 29 also comprises the device of the frequency of oscillation that is used for control generator.

33. the oscillator of claim 29, wherein this at least one amplifier comprises first amplifier that is positioned at primary importance at least, primary importance is at 1/4th places that center on the distance of closed loop coplanar striplines from the second place on first direction, and second amplifier be positioned at from this second place the 3rd position of 1/4th around the distance of closed loop coplanar striplines on second direction, like this, first and second amplifiers are relative to each other in the closed loop coplanar striplines.

34. the oscillator of claim 33, wherein:

Second conductor in the middle of first conductor in the middle of described two conductors at primary importance place is connected to described two conductors in the 3rd position; And

Second conductor at the primary importance place is connected to first conductor in the 3rd position.

35. the oscillator of claim 34, wherein said closed loop coplanar striplines are so shaped that primary importance is physically near the 3rd position.

36. a coplanar striplines comprises:

First conductor and second conductor,

Wherein this coplanar striplines is configured to have along the resistance per unit length R and the unit length electricity of the length variations of this coplanar striplines and leads G.

37. the coplanar striplines of claim 36, wherein this coplanar striplines is configured to have the characteristic impedance uniformly basically along the length of this coplanar striplines.

38. the coplanar striplines of claim 37, wherein this coplanar striplines is configured to a plurality of segmentations, and each segmentation in the middle of wherein said a plurality of segmentations has different resistance per unit length R and leads G with different unit length electricity.

39. the coplanar striplines of claim 37, wherein this coplanar striplines is configured to make resistance per unit length R and unit length electricity to lead the length basically continuously variation of G along this coplanar striplines.

40. the coplanar striplines of claim 37, wherein the width of the interval between described first and second conductors and described conductor is along the length variations of coplanar striplines.

41. a method that is used for generating at least one voltage standing wave(VSW) on coplanar striplines may further comprise the steps:

A) with the amplification that distributes of the mode along the length variations of this coplanar striplines, so that overcome the coplanar striplines loss.

42. the method for claim 41, wherein steps A) may further comprise the steps:

Along the coplanar striplines amplification that distributes, so that distributed amplification is relevant with the amplitude of this at least one voltage standing wave(VSW).

43. the method for claim 41, wherein steps A) may further comprise the steps:

B) arrange a plurality of amplifiers along coplanar striplines, at least two amplifiers in the middle of described a plurality of amplifiers have different gains.

44. at least one voltage standing wave(VSW) of each Amplifier Gain and this in the middle of the method for claim 43, wherein said a plurality of amplifiers is relevant in the amplitude of the three unities, described amplifier is disposed in this place along coplanar striplines.

45. the method for claim 44, wherein step B) may further comprise the steps:

Length along coplanar striplines is placed described a plurality of amplifiers in equal intervals ground basically.

46. a method that is used for generating at least one voltage standing wave(VSW) on coplanar striplines may further comprise the steps:

A) control the oscillation mode of this at least one voltage standing wave(VSW).

47. the method for claim 46, wherein steps A) may further comprise the steps:

B) place at least one amplifier along coplanar striplines, so that encourage at least one oscillation mode of wanting of this at least one voltage standing wave(VSW).

48. the method for claim 47, wherein step B) may further comprise the steps:

Place a plurality of amplifiers along coplanar striplines at the diverse location place, so that encourage at least one oscillation mode of wanting of this at least one voltage standing wave(VSW).

49. the method for claim 46, wherein steps A) may further comprise the steps:

Along the coplanar striplines amplification that distributes, so that distributed amplification is relevant with the amplitude of the oscillation mode of wanting of this at least one voltage standing wave(VSW).

50. a method that is used to be controlled at the frequency of at least one voltage standing wave(VSW) on the coplanar striplines may further comprise the steps:

A) place at least one frequency control apparatus along the position of the mid point of coplanar striplines between the no-voltage node of the amplitude peak that approaches this at least one voltage standing wave(VSW) and this at least one voltage standing wave(VSW).

51. the method for claim 50, wherein steps A) may further comprise the steps:

B) place this at least one frequency control apparatus along the position of coplanar striplines between described mid point and no-voltage node.

52. the method for claim 51, wherein step B) may further comprise the steps:

This at least one frequency control apparatus be placed to make its with the distance of described mid point than nearer with the distance of no-voltage node.

53. an equipment comprises:

A coplanar striplines (CPS), it includes only first conductor and second conductor parallel to each other basically and that be orientated along first direction basically; And

Be arranged to the conductive strips near a plurality of straight lines basically of this coplanar striplines, described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.

54. the equipment of claim 53 also comprises at least one dielectric substance that is disposed between described at least coplanar striplines and a plurality of conductive strips.

55. the equipment of claim 54 also comprises a silicon chip, places described at least one dielectric substance, a plurality of straight line conductive strips and coplanar striplines on it.

56. the equipment of claim 53, wherein this equipment is configured to be supported at least one signal on the coplanar striplines, that have a frequency the scope from about 1GHz to 60GHz at least, and wherein this coplanar striplines and a plurality of straight line conductive strips are arranged to make this equipment to have at least 30 quality factor q at least one frequency the scope from about 1GHz to 60GHz at least.

57. the equipment of claim 53, wherein this coplanar striplines and a plurality of straight line conductive strips are arranged to make that the quality factor q of this equipment is 50 at least one frequency the scope from about 1GHz to 60GHz at least at least.

58. the equipment of claim 53, wherein this coplanar striplines and a plurality of straight line conductive strips are arranged to make that the quality factor q of this equipment is 70 at least one frequency the scope from about 1GHz to 60GHz at least at least.

59. the equipment of claim 53, wherein:

Second direction and first direction quadrature;

This coplanar striplines is disposed in first plane;

At least some conductive strips in the middle of described a plurality of straight line conductive strips are disposed on second plane that is arranged essentially parallel to first plane; And

At least one normal on first plane and second plane passes a conductor of this coplanar striplines and at least one conductive strips in the middle of described a plurality of straight line conductive strips simultaneously.

60. the equipment of claim 59, wherein:

Each conductor in the middle of first and second conductors has the width W along second direction at a set point place along coplanar striplines;

First and second conductors are spaced apart apart from S with first along second direction at this set point place along coplanar striplines;

This coplanar striplines has the first size D along second direction, wherein D=2W+S at this set point place along coplanar striplines;

Each conductive strips in the middle of described a plurality of straight line conductive strips have the length l along second direction _sAnd

This length l _sWith first size D approximately equal.

61. the equipment of claim 60, wherein said length l _sApproximately big by 10% compared with first size D.

62. the equipment of claim 60, wherein:

Each conductive strips in the middle of described a plurality of straight line conductive strips have the width d along first direction _AAnd

This width d _ASignificantly less than first size D.

63. the equipment of claim 62, wherein:

The adjacent straight line conductive strips of described a plurality of straight line conductive strips are spaced apart one apart from d along first direction _BAnd

This is apart from d _BSignificantly less than first size D.

64. the equipment of claim 63, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

65. the equipment of claim 63, the width d of wherein said straight line conductive strips _ALess than spaced apart adjacent straight line conductive strips apart from d _B, and reach this approximately apart from d _BHalf.

66. the equipment of claim 63, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BAmong the two each is compared with the approximate little magnitude of first size D.

67. the equipment of claim 66, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

68. the equipment of claim 63, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BAmong the two each compared with first size D to magnitude when young.

69. the equipment of claim 68, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

70. the equipment of claim 60, wherein:

This coplanar striplines has the length L along first direction _CPS

Each conductive strips in the middle of described a plurality of straight line conductive strips have the width d along first direction _AAnd

This width d _ASignificantly less than the length L of coplanar striplines _CPS

71. the equipment of claim 70, wherein:

The adjacent straight line conductive strips of described a plurality of straight line conductive strips are spaced apart one apart from d along first direction _BAnd

This is apart from d _BSignificantly less than the length L of coplanar striplines _CPS

72. the equipment of claim 71, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

73. the equipment of claim 71, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BAmong the two each is compared with the length L of coplanar striplines _CPSAn approximate little magnitude.

74. the equipment of claim 73, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

75. the equipment of claim 71, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BAmong the two each is compared with the length L of coplanar striplines _CPSTo magnitude when young.

76. the equipment of claim 75, the width d of wherein said straight line conductive strips _AWith spaced apart adjacent straight line conductive strips apart from d _BApproximately equal.

77. the equipment of claim 59, wherein said a plurality of straight line conductive strips comprise:

More than first straight line conductive strips, it is disposed in second plane; And

More than second straight line conductive strips, it is disposed in the 3rd plane that is arranged essentially parallel to first plane and second plane.

78. the equipment of claim 77, wherein this first plane is between second plane and the 3rd plane.

79. the equipment of claim 78, wherein said more than first straight line conductive strips and more than second straight line conductive strips are arranged in an alternating manner, so that the normal on first, second and the 3rd plane does not pass conductive strips in the middle of more than first the straight line conductive strips and conductive strips in the middle of more than second straight line conductive strips simultaneously.

80. the equipment of claim 77, wherein this second plane is between first plane and the 3rd plane.

81. the equipment of claim 80, wherein said more than first straight line conductive strips and more than second straight line conductive strips are arranged in an alternating manner, so that the normal on first, second and the 3rd plane does not pass conductive strips in the middle of more than first the straight line conductive strips and conductive strips in the middle of more than second straight line conductive strips simultaneously.

82. the equipment of claim 77, wherein said a plurality of straight line conductive strips comprise at least the three many straight line conductive strips, and it is disposed in Siping City's face that is arranged essentially parallel to first, second and the 3rd plane at least.

83. a method of carrying at least one differential signal may further comprise the steps:

A) carry at least one differential signal by being orientated and being placed with along first direction basically near the coplanar striplines of a plurality of straight line conductive strips, wherein said a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction.

84. the method for claim 83, wherein this coplanar striplines includes only first conductor and second conductor that is used for carrying this at least one differential signal, and wherein this method is further comprising the steps of:

B) described a plurality of straight line conductive strips are remained on floating potential with respect to first conductor and second conductor.

85. the method for claim 84, wherein this coplanar striplines and described a plurality of straight line conductive strips are disposed on the silicon chip, wherein this coplanar striplines is configured to support to have at least one signal of a frequency the scope from about 1GHz to 60GHz at least, wherein this coplanar striplines and described a plurality of straight line conductive strips are arranged to make this equipment to have at least 50 quality factor q at least one frequency the scope from about 1GHz to 60GHz at least, and steps A wherein) may further comprise the steps:

Carry at least one differential signal with frequency scope from about 1GHz to 60GHz at least by this coplanar striplines.

86. the method for claim 85, wherein this coplanar striplines and described a plurality of straight line conductive strips are arranged to make this equipment to have at least 70 quality factor q at least one frequency the scope from about 10GHz to 50GHz, and steps A wherein) may further comprise the steps:

Carry at least one differential signal with frequency scope from about 10GHz to 50GHz by this coplanar striplines.

87. a coplanar striplines device comprises:

A silicon chip;

Basically first conductor and second conductor parallel to each other, as to be disposed in this first plane above silicon chip and to be orientated along first direction basically; And

Be disposed in a plurality of straight line conductive strips on the second top plane of this silicon chip, described a plurality of straight line conductive strips are parallel to each other basically, and basically along the second direction orientation vertical with first direction; And

At least one dielectric substance, it is disposed between the first plane and second plane at least;

Wherein this device is configured to be supported at least one signal on first and second conductors, that have a frequency the scope from about 1GHz to 60GHz at least, and wherein first and second conductors and described a plurality of straight line conductive strips are arranged to make this equipment to have at least 30 quality factor q at least one frequency the scope from about 1GHz to 60GHz at least.

88. the method for claim 87, wherein said first and second conductors and described a plurality of straight line conductive strips are arranged to make that this equipment has at least 50 quality factor q at least one frequency the scope from about 1GHz to about 60GHz.

89. the method for claim 87, wherein said first and second conductors and described a plurality of straight line conductive strips are arranged to make that this equipment has at least 70 quality factor q at least one frequency the scope from about 1GHz to about 60GHz.

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