CN1856864A - Impurity introducing method, impurity introducing apparatus, and electronic device produced by using those - Google Patents

Abstract

The present invention realizes impurity introduction without causing increase in substrate temperature. The physical properties of lattice defects formed during the impurity introduction step are optically measured and controlled so that they become optimum for the following step. An impurity introducing method comprises a step for introducing an impurity into the surface of a solid base, a step for measuring optical characteristics of the region where the impurity is introduced, a step for determining annealing conditions according to the measured optical characteristics of the impurity-introduced region, and a step for annealing the impurity-introduced region under the thus-determined annealing conditions.

Description

Impurity mixes method, impurity and mixes system and utilize the electronic device that their form

Technical field

The present invention relates to impurity and mix method, impurity and mix system and utilize the electronic device that their form, more particularly, relate to forming the impurity that semiconductor device particularly uses in electronic device or the liquid crystal plate making method and mixing.

Background technology

Along with the miniaturization of semiconductor device, demand forms the technology of shallow junction (shallow junction) in recent years.In the semiconductor fabrication of prior art, for example boron (B), phosphorus (P), arsenic (As) etc. are injected into as the method in the surface of the semiconductor substrate of solid matrix (base body) with low energy ion and are widely adopted with the impurity of various conduction types.

Form by utilizing this ion injection method because have the semiconductor device of shallow junction, thus in fact can form shallow junction, but it is restricted that ion is injected the degree of depth that can form.For example, because boron impurity is difficult to shallow mixing, so being restricted to of the degree of depth of the doped region that inject to form by ion apart from the surface of matrix 100nm almost.

Therefore, the various methods of mixing have been proposed as making the feasible approach of more shallow knot recently.Wherein, now a lot of attentivenesss concentrate on as the plasma doping of the technology that is suitable for actual use technical.Plasma doping is such technology, promptly contains the reacting gas of impurity by plasma exciatiaon, thereby and this plasma is shone on the surface of solid matrix and mix impurity.Then, carry out the activation of the impurity that mixed by the annealing steps of impurity after being impregnated in.

Usually, the light source that can launch for example visible radiation of electromagnetic wave, infrared radiation, ultra-violet radiation etc. of wide wave-length coverage is used in annealing steps.Yet, to activating effective wavelength according to the crystal situation of being mixed the solid matrix itself of impurity into and difference.In fact such wavelength is present in the narrow scope usually.The irradiation of the light of unnecessary wavelength is risen the temperature of substrate and is caused the characteristic variation in some cases.

In recent years, proposed to be incorporated in the method (for example seeing JP-A-2000-282425) of the amount of the impurity in the surface of solid matrix by the optical measurement measurement.Because this method is measured the amount of atomic group (radical) by optical measurement, can measure incorporation by the amount that detects electric current.

Summary of the invention

By the incorporation of said method checked for impurities, promptly mix the total amount of the impurity in the solid matrix.Measure the total amount of the impurity that mixes yes important.But, in realizing best plasma doping and for example the best of carrying out such as rayed annealed by energy exposure subsequently, checked for impurities mix in the zone situation for example the crystal situation be very important, described crystal situation is promptly when by mixing impurity in the silicon substrate when forming semiconductor device or when having how many lattice defects to be introduced into when forming TFT (thin-film transistor) manufacturing liquid crystal board on crystal liquid substrate.

The present invention In view of the foregoing makes, and aims to provide the electricity activation of realization impurity and do not cause the impurity of the temperature rising of substrate to mix technology.

In addition, the present invention is intended to optical measurement when form semiconductor device on silicon substrate, mix the physical attribute of the lattice defect that step produces when making liquid crystal board etc. by impurity in monocrystalline silicon or polysilicon, optimize condition in the subsequent step thereby control condition that impurity mixes step then.

Therefore, the impurity method of mixing of the present invention comprises: impurity is incorporated into the step in the surface of solid matrix; Measurement is mixed with the step of optical characteristics in the zone of impurity; Thereby satisfy the step of this regional optical characteristics that is mixed with impurity based on measurement result selective annealing condition; And based on selected annealing conditions, annealing is mixed with this regional step of impurity.

According to this method, this regional optical characteristics that is mixed with impurity is measured in advance, can realize optimum annealing in response to this optical characteristics, and impurity mixes the zone and can form with high-accuracy high-efficiency ground thus.

In this case, impurity mixes step and not only comprises the step of mixing impurity simply, and comprise that thereby the control surface situation obtains being suitable for the step of the optical characteristics of annealing steps, make to comprise mainly that what implement subsequently energy can be absorbed effectively in light-struck annealing steps.Thereby the control of optical characteristics comprises impurity substances and the step of controlling the optical characteristics in the zone that is mixed with this impurity as the inert substance of the material that mixes with this impurity substances or composition that plasma is recently controlled in the mixing between the reactive material by change constituting plasma.Promptly comprise this step: impurity substances with simultaneously or in a sequence be fed on the surface of solid matrix such as the inert substance of nitrogen, rare gas etc. and such as the reactive material of oxygen, silane, disilane etc., form the optical characteristics that is suitable for annealing steps then." impurity mixes method " expression among the present invention comprises the series of steps of annealing steps.

In addition, in the present invention, the step of mixing impurity comprises the plasma doping step.

According to this method, impurity can be mixed in shallow zone.

In addition, in the present invention, the step of mixing impurity comprises the ion implantation step.

According to this method, light-struck annealing steps height is effective can to make mainly comprising of carrying out subsequently, can also realize the high accuracy plasma doping.

In addition, in the present invention, this measuring process carried out before this annealing steps.

According to this method, this regional situation that is mixed with impurity can be detected before this annealing, thereafter can the selective annealing condition, can obtain the optimum state of activation thus.

In addition, in the present invention, this measuring process and this annealing steps carry out simultaneously.

According to this method, this regional situation that is mixed with impurity can be detected during annealing, thereafter can the selective annealing condition, can obtain the optimum state of activation thus.

In addition, in the present invention, this annealing steps is divided into a plurality of periods, and this measuring process carries out between this annealing steps.

According to this method, this annealing steps is divided into a plurality of periods, and this regional situation that is mixed with impurity can be detected during annealing, thereafter can the selective annealing condition.Like this, can obtain the optimum state of activation.

In addition, in the present invention, the step of selective annealing condition is included in and makes during this annealing steps described annealing conditions mix the change of optical characteristics in zone along with this impurity and the step that changes in succession.

According to this method, can detect the change of this zone that is mixed with impurity by annealing, thereafter can the selective annealing condition.Like this, can obtain the optimum state of activation.

In addition, in the present invention, this impurity mixes step and is divided into a plurality of periods, and this measuring process mixes between the step at this impurity and carries out.

According to this method, because mixing between the step at this impurity, this measuring process carries out, can accurately measure according to the situation in the chamber so mix in the step optical characteristics, and can also realize that high accuracy impurity mixes at impurity.In addition, although mixing of impurity must stop once, this example is effective for the doping of using atmospheric pressure plasma etc.

A kind of impurity method of mixing of the present invention comprises: impurity is incorporated into the step in the surface of solid matrix; Measurement is mixed with the step of optical characteristics in the zone of this impurity; Thereby adjust the step that this optical characteristics satisfies annealing conditions based on measurement result; And annealing is mixed with this regional step of this impurity.

This method is for being effective to the conditional situation of annealing conditions.

In addition, in the present invention, when monitoring was mixed with this regional optical constant of impurity, control plasma doping condition made this optical constant satisfy the rayed of carrying out after this plasma doping step.

According to this method, can form and have more that the impurity of high accuracy depth and dosage mixes the zone.Here, except the absorption coefficient of light, can also use reflectivity etc. as described optical constant.

In addition, in the present invention, described measuring process is to use the step of ellipsometry (ellipsometry).

In addition, in the present invention, use the step of ellipsometry to comprise that calculating this impurity mixes the thickness of layer and the ellipsometry analytical procedure of optical constant (refractive index n and extinction coefficient k).

In addition, in the present invention, this ellipsometry analytical procedure comprises the analytical procedure of utilizing any employing refractive index wavelength dispersion model in K-K (Kramers-Kronig) analysis, Tauc-Lorentz analysis, Cody-Lorentz analysis, Forouhi-Bloomer analysis, MDF analysis, frequency range analysis, Tetrahedral analysis, Drude analysis and the Lorentz analysis.Owing to can handle absorption characteristic, be specially suitable so adopt refractive index wavelength dispersion model.

In addition, in the present invention, mix measuring process described in the method at described impurity and comprise the step of using XPS.

In addition, in the present invention, this annealing steps is the electromagnetic step of irradiation.

In addition, in the present invention, this annealing steps is the step of irradiates light.

In addition, in the present invention, this mixes the impurity step is to mix the feasible absorption coefficient of light that is mixed with the zone of this impurity of impurity to surpass 5E4cm ^-1Step.

According to this method, can select to have the annealing conditions of high absorptivity and high efficient.

In addition, in the present invention, this plasma doping step comprise control be applied to this plasma supply voltage, this plasma composition and contain dopant species this plasma irradiation time and do not contain at least a step in the ratio between the irradiation time of this plasma of this dopant species.

According to this method, can effectively control.Here, wait the composition of controlling this plasma by adjusting as the mixing ratio between the impurity substances of dopant and the mixing ratio between other material, vacuum, other material.

In addition, in the present invention, this plasma doping step comprise by change constituting this plasma impurity substances with as the inert substance of the material that mixes with this impurity substances or the step that the mixing ratio between the reactive material is controlled the composition of this plasma, thereby control the optical characteristics in the zone that is mixed with this impurity.Here, by changing material such as arsenic, phosphorus, boron, aluminium, antimony, indium etc. as impurity substances, as the inert gas such as helium, argon, xenon etc. of compounding substances, and recently control described optical characteristics such as the mixing between the reactive material of nitrogen, oxygen, silane, disilane etc.

In addition, in the present invention, this plasma doping step setting is mixed with the optical constant in the zone of this impurity, makes that the electricity activation that is included in this impurity in the zone that is mixed with impurity is accelerated and the energy absorption in this solid matrix is suppressed.

According to this method, this annealing can optionally be finished and elevated temperature not effectively.

A kind of impurity of the present invention system of mixing comprises: impurity mixes device, and it is used for impurity is mixed the surface of solid matrix; Measurement mechanism, it is used to measure the optical characteristics in the zone that is mixed with this impurity; And annealing device, it is used to anneal and is mixed with the described zone of this impurity.

Therefore, can easily detect surface appearance.

In addition, in the present invention, this impurity system of mixing also comprises: the doping control device, it is used for controlling this plasma doper based on the measurement result of this measurement mechanism.

In addition, in the present invention, this impurity system of mixing also comprises: the annealing control device, it is used for controlling this annealing device based on the measurement result of this measurement mechanism.

In addition, in the present invention, this impurity system of mixing also comprises: feedback mechanism, it is used for the measurement feedback of described measurement mechanism is mixed any of control device to this annealing control device or this impurity.

In addition, in the present invention, this feedback mechanism original position is carried out the feedback of measurement result.

In addition, in the present invention, this feedback mechanism to be surveying sample at a high speed, and if the result bad then carry out that extra process is for example additionally mixed, annealing conditions relaxes (annealing condition relaxation) etc.

In addition, electronic device of the present invention, it forms by utilizing the impurity method of mixing of the present invention to mix impurity.

Description of drawings

Fig. 1 is that the impurity that explanation produces at the solid matrix near surface in the first embodiment of the present invention mixes the view of the optical measurement of layer;

Fig. 2 is used to illustrate obtain the allocation plan that impurity mixes the beam split ellipsometer (spectroellipsometer) of the thickness of layer and the method for the absorption coefficient of light;

Fig. 3 is a curve chart, and the absorption coefficient of light that the impurity of measuring by ellipsometer mixes layer is shown;

Fig. 4 is the configuration cutaway view, and the system that uses in the application's the invention is shown, and it adopts the plasma doping in the second embodiment of the present invention;

Fig. 5 is a curve chart, the absorption coefficient spectrum that sample P D-1 (bias voltage 30V, processing time 60s) and PD-2 (bias voltage 60V, processing time 60s) is shown and is used for the crystalline silicon substrates of comparison;

Fig. 6 is a curve chart, is illustrated in impurity in the example 3 of the present invention and mixes in the method absorption coefficient of light to the dependence of processing time (a) and wavelength (b);

Fig. 7 is the key diagram that utilizes the annealing furnace of white light source in the example 6 of the present invention and wavelength selection filter;

Fig. 8 is the schematic cross sectional views of solid matrix, is used for illustrating the special-effect when the impurity of example 7 of the present invention mixes layer by nitrogenize or oxidation;

Fig. 9 is the system concept figure of the annealing furnace in the example 7 of the present invention; And

Figure 10 is the curve chart of explanation one example, and it is illuminated to change the light of wavelength of (transition of time) in response to the time in this example when annealing impurity mixes layer.

Among the figure, Reference numeral 100 is solid matrix, the 110th, and impurity mixes layer, the 120th, light source, the 130th, photometer, the 200th, vacuum chamber, the 210th, vacuum pump, the 230th, vacuum gauge, the 240th, plasma source, the 250th, power supply, the 260th, substrate fixer, the 270th, power supply, 280 is first pipelines, and 290 is second pipelines, and 300 is the 3rd pipelines, the 310th, plasma, the 320th, computer, the 340th, control circuit, the 350th, controller, the 500th, substrate fixer, the 510th, white light source, the 520th, filter, the 530th, the light of selecting, the 600th, nitride film, the 610th, oxide-film, the 700th, LASER Light Source, the 710th, modulation filter, the 720th, light modulated.

Embodiment

Below embodiments of the invention will be described.

The present invention roughly provides three embodiment.The situation that among the embodiment first is to mix the impurity in the solid matrix detects by optical measurement.This not only means the optical measurement of impurity itself, and meaning the optical measurement of " composite bed (composite layer) " situation, the chemical modification that comprises damage that the physics Change Example of crystal situation of crystal situation, the solid matrix of solid matrix self causes as the energy of using in mixing etc. and solid matrix is the generation etc. of oxide skin(coating)/nitride layer for example.Among the embodiment second is that annealing conditions is according to the impurity situation that is detected and optimised.Thereby the 3rd Be Controlled of mixing that is impurity among the embodiment satisfies annealing conditions.

In other words, in the method for the invention, also improved the quality that impurity mixes by after grasping mixing of impurity implementing FEEDBACK CONTROL in the situation of impurity.In addition, for example in semiconductor device or LCD, after impurity is introduced in the solid matrix, provide energy that the impurity in the semiconductor is activated by electricity to matrix by utilizing any method as main application fields of the present invention.In order in this step, to obtain best result, applied step Be Controlled when mixing impurity.

(embodiment 1)

In present embodiment 1, will illustrate that below the particle (particle) that has a sufficiently high energy of binding energy (bondenergy) (tens of eV or bigger) than lattice by utilization is incorporated into method in the solid matrix with impurity.When having particle than the sufficiently high energy of the binding energy of lattice (tens eV or bigger) when being used for that impurity mixed solid matrix, constitute that crystal or amorphous substance are constructed the formation of lattice defect in the lattice (lattice) of solid matrix and physical attribute that impurity substances itself causes solid matrix changes, make impurity mix layer (a new second layer) 110 and be formed with physical attribute different with solid matrix 100.

In addition, the implant energy with less in application such as when thermal equilibrium condition changes mixes in the step of impurity, and this impurity mixes step and causes the physical attribute of solid matrix to change and new (second) layer 110 of mainly being made of impurity substances itself subsequently is formed near surface tight of solid matrix.

Therefore, according to ellipsometry, as shown in Figure 1, by utilizing light source 120 light to be irradiated on the surface of solid matrix and this light is measured by photometer 130 then.

Mix the thickness of layer and the method for the absorption coefficient of light with reference to the allocation plan explanation of the beam split ellipsometer of Fig. 2 by utilizing ellipsometry to measure impurity below.

As shown in Figure 2, thus this beam split ellipsometer comprises Xe light source 20, is used to make from the Xe light polarization of light source output and shines as the polarizer on the substrate of sample 11 21, be used to detect catoptrical analyzer 22, spectrometer 23 and detector 24 from sample 11.Here, be polarized device 21 from the Xe light of Xe light source 20 output and convert linearly polarized photon to, then with respect to the direction vertical with substrate surface with angle θ ₀Incide on the substrate.In this is measured, angle θ ₀Be fixed to θ ₀=70 °, if but this angle changes in 45 ° to 90 ° scope, and measure and also can carry out.The linear polarization axle of incident light with respect to the p direction (perpendicular to the plane of optical axis and comprise incident light and catoptrical plane between the direction of intersection) and the s direction direction of p direction (in perpendicular to) perpendicular to the plane of optical axis tilt.Suppose that the p component of the light that is reflected into elliptically polarized light and the amplitude reflectance ratio between the s component are that phase difference between Ψ and p component and the s component is a Δ.The structure ellipsometry makes the light multichannel analyzer 22 that is reflected into elliptically polarized light incide on the spectrometer 23, and Ψ and Δ are measured by detector 24 when analyzing this light by spectrometer then.

To illustrate below by least square method and not only obtain the method that impurity mixes the thickness of layer but also obtains the optical constant (refractive index n and extinction coefficient k) as unknown parameter based on the ellipsometry measurement result of Ψ, Δ.Impurity mixes layer and is called as the PD layer, and uses the three layer model that comprises air/PD layer/c-Si.Because optical coefficient has wavelength dependence, thus when changing wavelength and measure unknown parameter increase to the number of measured wavelength as many, make the unknown parameter non-availability.In this case, if optical coefficient spectrum (spectra) is represented with the approximate expression that contains the constant that does not rely on wavelength and then this constant be used as unknown parameter, then can obtain such optical coefficient spectrum.

Various examples have been proposed as refractive index wavelength dispersion model (dispersive model).Because must handle the strong absorption characteristic of PD layer, so use K-K (Kramers-Kronig) analytical method in the present embodiment.Even when adopting Tauc-Lorentz analysis, Cody-Lorentz analysis, Forouhi-Bloomer analysis, MDF analysis, frequency range analysis, Tetrahedral analysis, Drude analysis, Lorentz analysis etc. as refractive index wavelength dispersion model, above-mentioned analysis also can be carried out.

The feature of K-K (Kramers-Kronig) analytical method then, will be described below.

When the optical absorption band of thin layer appears in the measured wave-length coverage, not only can obtain refractive index but also can obtain extinction coefficient by the dispersion equation (equation 1) of utilization from the complex refractivity index of following Kramers-Kronig relational expression acquisition.

Formula 1

$n=1+\frac{2}{\mathrm{\π}}P{\∫}_0^{\∞}\frac{{\mathrm{\ω}}^{\′}k}{{\mathrm{\ω}}^{\′2}-{\mathrm{\ω}}^{\′2}}d{\mathrm{\ω}}^{\′}$

$k=-\frac{2}{\mathrm{\π}}P{\∫}_0^{\∞}\frac{{\mathrm{\ω}}^{\′}k}{{\mathrm{\ω}}^{\′2}-{\mathrm{\ω}}^{\′2}}d{\mathrm{\ω}}^{\′}---\left(1\right)$

Wherein P is the main value (principal value) of Cauchy integral (Cauchy integral), and ω is a frequency.

These relational expressions are represented, if known extinction coefficient then can be estimated refractive index based on extinction coefficient.In the time of in optical absorption band appears at measured wave-length coverage, the extinction coefficient spectrum in this wave-length coverage is approximate by Lorentz type formula (equation 2).

Formula 2

k＝C1(E-C4) ²/(E ²-C2E+C3) (2)

Wherein E is photon energy (eV), and has the relation shown in the following equation (3) with wavelength X (nm).

Formula 3

E(eV)＝1239.84/λ(nm) (3)

By being quadratured, Kramers-Kronig relational expression (1) utilize equation 2 can obtain the equation (4) of following refractive index simultaneously.

Formula 4

n＝C5+f(E) (4)

Wherein f (E) is an integrated value, and C5 is an integral constant.

In this K-K analyzed, C1, C2, C3, C4, C5 was as parameter and provide initial value.Because C5 is one of parameter of representing by integral constant refractive index, so the big induced refractive index of PD layer is set to initial value.For C1, extinction coefficient roughly, promptly the value of the peak extinction coefficient of extinction coefficient spectrum provides initial value.

On the contrary, the peak E (eV) of C2, C3 and extinction coefficient spectrum is relevant, and the twice value that C2 can have a peak E (eV) is as initial value roughly, and the square value that C3 can have a peak E (eV) is as initial value roughly.Because C4 is relevant with the bandwidth of absorption band, can be used as initial value so have E (eV) value of minimum extinction coefficient in the bottom at the peak that extinction coefficient is composed.

As mentioned above, when adopting K-K to analyze,, as the physical attribute of the film of target substance, then can analyze in considering simultaneously to measure if be that the extinction coefficient spectrum is provided with initial value by the supposition absorption spectra.

In the K-K analytical model, with the setting of other model reduced parameter be difficulty and The Fitting Calculation (fitting calculation) also be difficult.Match can not be obtained according to being provided with of parameter.Therefore, K-K analyzes and must be familiar with this Measurement and analysis to a certain degree and after understanding the characteristic of this model being used the user again.

Detected impurity by said method and mixed the thickness of layer and optical constant (refractive index n and extinction coefficient k) afterwards, can calculate the absorption coefficient of light by following equation (5).

α＝4πk/λ (5)

The spectrum that expression impurity mixes the optical characteristics of layer 110 is shown among Fig. 3.

Obvious from Fig. 3, when considering based on the measurement result of utilizing ellipsometry, the absorption coefficient of light of the light between the wavelength 300nm to 600nm increases.

Therefore, the light that has the wavelength of 300nm to 600nm by irradiation in subsequent step can obtain activation effectively, therefore can pass through less irradiation energy activated impurity effectively.

In the present embodiment, in this way, the surface appearance of solid matrix that is introduced into impurity is measured, determines principal element in the subsequent step based on measured result then.

Simultaneously, in semicon industry or liquid crystal industry, mix layer 110 by the impurity that mixes impurity formation and activated by electricity by the irradiation electromagnetic wave.This means as the silicon crystal of the main component of solid matrix and mix the step of impurity by energy and destroyed with the binding energy that is higher than lattice, be introduced into the lattice defect that impurity mixes layer (impurity mixes the zone) then and mix on the layer to impurity and be resumed, and impurity mixes layer and becomes electroactive situation then by irradiation electromagnetic wave in step afterwards.

At this moment, the impurity situation of mixing layer depends on the relation between the physical attribute of the material that constitutes solid matrix and impurity substances.Impurity substances for example enters into the lattice position of silicon by replacement, crystallization be accelerated and therefore impurity mix layer and become electroactive situation.

Therefore, in order to realize such process, impurity is by electricity activation effectively when shining for example visible radiation.Here, need analysing impurity mix the layer optical absorption spectra and then should be illuminated based on the light of the suitable wavelength of result.In addition, when solid matrix 100 and impurity mix layer 110 and mix from the teeth outwards, the optical absorption spectra of solid matrix itself is analyzed, select such wave band then, but to mix layer 110 the absorption coefficient of light big for the little impurity of the absorption coefficient of light of solid matrix 100 in the described wave band, and shine the light of this wave band then.Like this, impurity mixes layer and can be activated, and the temperature that suppresses solid matrix 100 simultaneously rises.

As mentioned above, in the present embodiment, because used the optical measurement that utilizes ellipsometry, so can correspondingly calculate the absorption coefficient of light.Especially, because the diffusion phenomena (diffusion phenomenon) that produce in the solid matrix form the principal element with undersized meticulous middle-size and small-sizeization of device as stoping, only being radiated at not on solid matrix provides the meaning of useless energy of the light of specific wavelength can prevent diffusion, so present embodiment is effective for the formation of meticulous device.Especially when comprising that repeatedly impurity mixes step, must use a large amount of heat treatment steps.According to the present invention, can suppress the extension of unnecessary diffusion length by the light that only shines specific wavelength.

In this example, the optical characteristic measurement method is not limited to ellipsometry, and XPS etc. can suitably be selected.

(embodiment 2)

The using plasma doping method was mixed the method for method when this method of use will be described below as impurity.

At first, plasma doping system and the impurity that uses in the explanation present embodiment is mixed control system, will describe the control method of some types then in detail.As shown in Figure 4, the plasma doping system that adopts in the present embodiment comprise light source 120 and as be used to measure impurity on the solid matrix 100 mix the zone optical characteristics measurement mechanism photometer 130 and be used for control device based on the optical characteristics controlled doping condition that obtains by this measurement mechanism.This system feedback controlled doping condition makes optimum surface appearance to be obtained.

In other words, this plasma doped system comprises vacuum chamber 200, be used for producing at vacuum chamber 200 plasma source 240 of plasmas, and plasma doping is applied to as processed matrix loads on the surface of the solid matrix 100 on the substrate fixer 260.

Then, vacuum pump 210 is connected to vacuum chamber 200, and the vacuum gauge 230 that is used to measure vacuum is provided for vacuum chamber 200.Power supply 250 is connected to plasma source 240.In addition, the power supply 270 that is used to apply the monodrome electromotive force is connected to substrate fixer 260 discretely with above-mentioned power supply.

In addition, the gas that is used to introduce gas is introduced mechanism (mechanism) and is provided for vacuum chamber 200.This gas is introduced mechanism by being used for supplying first pipeline 280 as first material of dopant species, the 3rd pipeline 300 structures that are used for supplying second pipeline 290 of second material (this example is He) as other material and are used to supply the 3rd material (this example is Ar).

In addition, control device comprise the optical characteristics that is used to calculate photometer measurement computer 320, be used for based on the control circuit 340 of result of calculation decision controlled condition and be used for controller 350 based on the doping condition of the output FEEDBACK CONTROL plasma doping system of control circuit.

Then, the doping method of using this doped system will be described below.

Here, will illustrate that below gas is used as the situation of doped source.

At first, the dopant species as first material is supplied to vacuum chamber 200.Here, other material that is different from this dopant species is introduced into as carrier gas or material with specific function.In the present embodiment, for example rare gas etc. is chosen to have the gas of the attribute different with dopant species, and it does not become electroactive in silicon.For instance, He or Ar are arranged.Then, He is selected as second material, and Ar is selected as the 3rd material.Then, by introducing gas, be created on the surface of solid matrix 100 at vacuum chamber 200 ionic medium bodies 310 from the gas inlet tube road that comprises first to the 3rd pipeline 280,290,300.

Charged particle in the plasma is attracted by the electrical potential difference between plasma 310 and the solid matrix 100, mixes thereby implement impurity.Simultaneously, the electric neutrality material in the plasma be attached or occlusion at the near surface of solid matrix 100.Here, impurity mixes layer 110 situation by the situation of following solid matrix 100 and the energy decision of plasma, and impurity can be attached or by occlusion.

Mix step according to this impurity, the impurity that illustrates in the foregoing description mixes layer 110 and is formed on the surface of solid matrix 100.In order to measure the physical attribute that impurity mixes layer, light source 120 and photometer 130 are provided for vacuum chamber 200.Then, photometer 130 measured optical characteristics are calculated by computer 320, the result of calculation control circuit 340 of being fed then, data are fed controller 350 as feedback information then, and plasma doping system is adjusted condition of plasma and is controlled the physical attribute that impurity mixes layer thus.

Here controlled condition of plasma is had the supply voltage that is applied to plasma or voltage application time and apply mixing ratio, vacuum degree, other material of opportunity, dopant species and other material mixing ratio, contain the ratio etc. of irradiation time and the irradiation time of the plasma that does not contain dopant species of the plasma of dopant species.By changing the physical attribute that these parameter control impurity mix layer.

As example of the present invention, below each example will be described, wherein these parameters are changed.Now will describe the method for combined power and gas here in detail.

＜example 〉

Example 1

At first, with the method for explanation as the change power of example 1.

The energy of the charged particle (mainly being the ion of positively charged) of known plasma density and arrival substrate produces plasma according to supply power decides with the power supply that is connected to substrate fixer.Here an example will be described, the wherein main power that changes the power supply 270 that is connected to substrate fixer 260.

At first, supply the power of 1000W to be used to produce plasma from power supply 250.For the plasma 310 that makes generation arrives substrate effectively, a power is supplied to substrate fixer 260.At first, start plasma doping by supply 100W.At this moment, the impurity that finally the needs thickness that mixes layer is set to 15nm.

Here, adopt dopant species B ₂H ₆And also adopt He as other material.B ₂H ₆Introduce with 10SCCM with 2SCCM introducing and He.Vacuum is set to 1Pa.At first, doping is performed 5 seconds when from power supply 250 supply 100W.

Under this state, as shown in Figure 1 and Figure 4, impurity mix the layer optical constant (absorption coefficient of light) by photometer 130 measured.As a result, find that it is 12nm that impurity as computer 320 result calculated mixes layer thickness.

Then, the database that forms based on the measurement result of measuring according to inventor oneself calculates the condition that thickness that impurity mixes layer is set to 15nm that is used for by control circuit 340.Then, based on institute's result calculated, controller 350 will increase to 115W from the power of power supply 250 supplies, and plasma doping carried out 3 seconds then.

Then, confirm that by photometer 130 thickness that impurity mix layer reaches 15nm.Then, power supply 250 is closed, and plasma 130 extinguishes, so this technology finishes.

Example 2

Be shown in Fig. 5 by utilizing sample P D-1 (bias voltage 30V, processing time 60s) and PD-2 (bias voltage 60V, processing time 60s) that K-K (Kramers-Kronig) analytical method obtains and the absorption coefficient of the crystalline silicon substrates that is used for comparison to compose.In this embodiment, when increasing bias supply voltage for identical 60 seconds in the wave-length coverage of plasma doping time at 400nm to 800nm, the absorption coefficient of light of PD layer increases.This result determines that PD-2 is suitable for for example utilizing the adopted situation of method for annealing of the wavelength of 400nm to 800nm.Be that the ellipsometry measurement result can be fed the optimization to annealing, thereby utilize the validity of the ellipsometry measurement of K-K (Kramers-Kronig) analytical method to be verified.

Example 3

Then, the example as example 3 will be described below, and wherein impurity be mixed in the step method of mist and control.

When forming when utilizing when impurity mixes layer 110 that for example silicon substrate is as solid matrix 100, lattice is doped the agent material and other material is upset, and therefore such substrate becomes its amorphous state.In subsequent step this amorphous state being transformed into required state is important task.

In this embodiment, BF ₃Be used as dopant species and He and Ar and be used as other material.Here, be used as the BF of dopant species ₃Amount keep constant, be changed but impurity mixes the thickness of layer 110.

At first, thus make plasma generation form partial impurities in 5 seconds to mix layer 110 by introducing Ar.Impurity mixes layer 110 thickness and is 5nm when utilizing photometer measurement.Then, BF ₃Be introduced in impurity and mix in the layer 110, gas absorption is employed 5 seconds.Then by providing power to produce BF ₃Plasma mixes then and continued 3 seconds.Simultaneously, thus He is introduced into the thickness that obtains 20nm with smaller power 100W.The amount of dopant reaches predetermined doped dosage BF afterwards ₃Supply stop.The He plasma irradiating continues to utilize simultaneously photometer measurement thickness.When confirming later that when 5 seconds optical thickness that impurity mixes layer reaches 20nm, plasma stops, and technology finishes.

Example 4

Then, the example as example 4 will be described below, the ratio of irradiation time and the irradiation time of the plasma that does not contain dopant species that wherein contains the plasma of dopant species is adjusted.For the purpose of simplifying the description, the optical property of solid matrix will be described here, particularly such example, the impurity that has the big absorption coefficient of light after doping process in the annealing of for example rayed of wherein then carrying out etc. mixes layer 110 and is formed.For example, when adopting plasma doping system shown in Figure 4, suppose such situation usually, the absorption coefficient of light that the impurity that promptly utilizes the dopant of necessary amounts to form by plasma doping mixes layer 110 is unsuitable for annealing.

At that time, only the absorption coefficient of light is adjusted to have big value and does not change dopant dose, so rare gas for example Ar is introduced to mix second material from second pipeline 290, make the predetermined absorption coefficient of light in the annealing to be set up, another plasma that is different from dopant then is formed and shines on the solid matrix.Although only single example is by mixing layer 110 with the Ar plasma irradiating to solid matrix formation 100 last 5 seconds impurity.At that time, plasma irradiating time and other plasma parameter are adjusted and make the absorption coefficient of light have enough big value to anneal subsequently.Then, with He with B ₂H ₆Thereby be diluted to 0.5% gas that obtains and introduce the generation plasma from first pipeline of preparing for dopant species 280, this plasma irradiation is 15 seconds then.

The optical physics character of mixing layer 110 by the impurity that at first utilizes the Ar plasma to utilize the dopant plasma to form then compoundly is measured by photometer 130, then the predetermined optical characteristic promptly the absorption coefficient of light here obtained by a series of control system, this technology finishes then.The increase of Fig. 6 (a) is qualitative when being illustrated in the Ar irradiation absorption coefficient of light is to the dependence of process time.Check about 5 second the absorption coefficient of light be increased to above 5E4cm ^-1After, this technology is transformed into dopant technology.

According to this method, also can realize effective annealing.

Example 5

Then, example 5 of the present invention will be described below.In this example, impurity mixes the optical characteristics of layer 110 and also controls by FEEDBACK CONTROL, as in the example 1 to 4.The situation of crystal liquid substrate as solid matrix 100 will be described below.In this case, polysilicon deposition is on glass or quartz glass substrate, and the impurity that is used to form TFT then is incorporated in the polysilicon.Because the such polysilicon that is deposited on the glass substrate is a film, so the impurity that forms when mixing impurity mixes the major part that the thickness of layer 110 can occupy film.

The optical constant that the absorption coefficient of light is measured from photometer 130 obtains.In the formation of liquid-crystal apparatus, after dopant species is impregnated in, laser radiation is mixed its method of activation of sending a telegram here on the layer to impurity and be used.Therefore, impurity mixes layer and is adjusted and absorption coefficient of light Be Controlled, thereby laser can effectively be absorbed.

In this example, the impurity system of mixing shown in Figure 4 is used, and it is measured by photometer 130 that impurity mixes the optical characteristics of layer, and feedback is adjusted doping during measurement result.Stop the supply of dopant species according to the measurement result of photometer 130, and impurity mixes technology and finishes.

According to this method, can realize activation effectively.Therefore, the temperature of glass substrate rises little, and the generation of bending, distortion, crackle etc. can be suppressed, and productive rate can be enhanced.

Similarly, when other material when for example silicon substrate is used as solid matrix, this method can be controlled satisfactorily.

Example 6

Then, example 6 of the present invention will be described below.

In this example, shown in embodiment 1, it is measured that the impurity that is mixed with impurity mixes the optical characteristics of layer 110, realizes that by adjusting annealing conditions impurity mixes the activation of layer and the substrate temperature that do not raise in response to this result then.

Here, comprise that the electromagnetic wave irradiation of specific wavelength is annealed to solid matrix 100, be formed with the impurity that forms by the method for having described on the solid matrix 100 and mix layer 110.Electromagnetic energy is used to contribute effectively especially the electricity activation of mixing layer to impurity, but is suppressed and the temperature of solid matrix 100 rises and is suppressed to the energy supply of other zone (solid matrix).

As embodiment 1, light shines the lip-deep impurity that is formed on solid matrix 100 from light source 120 and mixes on the layer 110, and this light is measured by photometer 130 then.The spectrum that expression impurity mixes the optical characteristics of layer 110 is shown in Fig. 6 (b).Spectrum among Fig. 6 (b) is by utilizing ellipsometry measured, determined based on this measurement result as the principal element of the annealing steps of next step.

According to the method shown in the embodiment 2, boron is incorporated in the monocrystalline silicon substrate by plasma doping.

As the result who is obtained when comprising the optical measurement of solid matrix 100 that the impurity that this time forms mixes layer 110 similarly, the spectrum with near the peak the 600nm is observed, shown in Fig. 6 (b).In this case, during near the laser of the light adopting emission 600nm, when perhaps when adopting the white light source for example have wide slightly peak, adopting filter to block wavelength except 580nm to 620nm wavelength, only the illumination of the effective wavelength of annealing is mapped to that to have on the substrate that impurity mixes layer be effective.

For this reason, in this example 6, will illustrate below and wherein use filter to carry out the example of wavelength control.

As shown in Figure 7, annealing furnace is constructed to have substrate fixer 500, white light source 510 and filter 520, filter 520 removably be provided with and only transmission from the selected light 530 with specific wavelength of white light source.

In this example, impurity mixes layer 110 solid matrix 100 thereon and is loaded on the substrate fixer 500, mix on the layer 110 thereby be mapped to the lip-deep impurity that is formed on solid matrix from the illumination that white light source sends and adjustment has predetermined wavelength through filter then, carry out suitable annealing like this.

More particularly, comprise the light source that specific wavelength forms the peak in the wavelength spectrum shown in Figure 6, and provide and have a characteristic and make and only to be suitable for annealing the wavelength of substrate by filter 520 by (characteristic that for example comprises the peak of wavelength spectrum) thereby provide.In this system, be white light source 510 irradiations this example and illuminated by filter 520 then from light source at the light 530 of 580nm to 620nm inner filtration with the intensity of 100W.The energy of the light 530 of Guo Lving is mixed layer 110 effectively absorption and decay by the impurity on the substrate in this way, so the amount of the energy of solid matrix 100 absorptions is very little.

In this way, the temperature of whole solid matrix seldom rises and energy is only mixed layer 110 absorption by impurity, makes the impurity annealed layer that is limited in the specific region to be formed.The method places the MOS transistor in miniaturization scope zone etc. very useful for formation.

Here, can provide the cooling body (not shown) to substrate fixer 500, substrate can be further cooled.Yet according to the present invention, effective energy can be mixed layer 110 by impurity and absorb, and therefore such cooling body is not to need very much.

In addition, when by use with doped system shown in Figure 4 in mechanism's identical mechanism of adopting light source 120 and photometer 130 are offered annealing furnace shown in Figure 7 and measure impurity then when mixing the optical property of layer 110, the change of physical property is measured in the rayed.In this mode, the state that rayed causes changes can be measured.

In above example, illuminated by the light that uses white light source and the required wavelength of filter.In this example, the LASER Light Source with suitable wavelength (for example being 600nm in this example) can be used to replace white light source 510.

On the contrary, also can design impurity and mix the wavelength that layer adapts to the industrial LASER Light Source that can cheaply obtain with required optical characteristics.

Example 7

Then, mix nitrogen and oxygen method in the time of plasma doping as example 7 of the present invention will being described below as compounding substances.At first, when utilizing doped system shown in Figure 4, mix the impurity that 10nm is thick by the impurity that utilizes the described methods of embodiment 2 to use and mix layer 110 and be formed on the solid matrix.

Then, nitrogen or nitrogenous gas are introduced into by second pipeline 290 that is used to introduce as second material of other material, produce plasma then, and impurity mixes the top of layer 110 by the degree of depth of the about 3nm of nitrogenize then.

In this way, comprise that by measurement impurity mixes the optical characteristics of layer 110 and nitride film 600 (see figure 8)s, promptly offer light source 120 and photometer 130, computer 320, control circuit 340 and the controller 350 of the system among Fig. 4 by utilization, nitridation conditions can be controlled as for example light-struck optical characteristics of the annealing of satisfying follow-up execution.

" satisfying " this term of optical characteristics described herein is similar to described in the example 1 substantially.But the absorptivity of used light is by mixing layer 110 with oxide-film 610 coating impurity and can improving in the annealing steps before annealing.In addition, the oxidation that the participation (engagement) of airborne oxygen and moisture produces during annealing can correspondingly be prevented.Therefore, also can follow such advantage, promptly impurity mix the total optical characteristics of layer 110 and nitride film 600 can be stabilized.

In addition, shown in Fig. 8 (c), by introducing oxygen or the oxygen-containing gas as the 3rd material via the 3rd pipeline 300, it is oxidized that impurity mixes the surface energy of layer 110.At this moment, offer light source 120 and photometer 130, computer 320, control circuit 340 and the controller 350 of the system among Fig. 4 by utilization, impurity mixes layer 110 and the optical characteristics of oxide-film 610 also can be controlled as such optical characteristics, the light wavelength that the annealing of promptly satisfying follow-up execution is for example used in the rayed.When annealing, be difficult to anti-oxidation, but for example in anneal environment, use the introducing of the such surface oxide layer of vacuum or inert gas also can use by taking measures.

Here, illustrated that wherein impurity mixes layer 110 by the example of direct nitrogenize and oxidation.But by so-called CVD technology, for example by respectively via second pipeline 290 that is used to supply second material and the 3rd pipeline 300 that is used to supply the 3rd material introduce SiH ₄With the method for oxygen, silicon oxide film or other film can be deposited.If do like this, then mix the film that the physical property of layer do not have a correlation and also can be deposited, and can obtain various optical characteristics with impurity.In addition, should control optical characteristics by operating above-mentioned control system, this is extremely important in deposition.

Example 8

Then, will illustrate below that in annealing steps the change of mixing the optical characteristics in zone along with impurity then changes the method for annealing conditions.

Here, as shown in Figure 9, LASER Light Source 700 is as light source, and the modulation filter 710 that can change wavelength is used on this light path, and the lip-deep impurity that the light modulated 720 that the impurity of agreing to photometer 130 to measure mixes the situation of layer 110 is radiated at solid matrix 100 mixes on the layer 110.

Impurity with situation different with solid matrix mixes layer 110 and forms contact solid matrix 100, and thin nitride film, thin-oxide film etc. are formed and protect impurity to mix layer or control optical characteristics then.Then, by the irradiation electromagnetic wave for example light wait when annealing resulting structures, needless to say, by as described in the above embodiment, keeping enough attentions, can form the impurity that is suitable for annealing most at first and mix layer to satisfy the peculiar wavelength of laser with a centre wavelength.In addition, in order to obtain optimum in annealing steps, thereby the expectation annealing conditions should be changed the situation of agreing to the impurity that is changed by rayed to mix layer.

Figure 10 illustrates the situation that the absorption coefficient of light wherein changed with the rayed time.Such behavior promptly is shown, and wherein the optical absorption characteristics of representing with curve a before the rayed is converted to curve b and is converted to curve c then after 100 nanosecond in rayed after 10 nanoseconds.

Shift during annealing gradually at this center that shows light absorption.Because as the feature of the annealing of using white light to carry out, the light of all wavelengths is comprised,, but must shine the whole light that contain unnecessary wavelength so this annealing can respond the change of this light absorption naturally for this reason.Therefore,, caused defective, made the temperature of whole base plate or the temperature rising of solid matrix near surface etc. as illustrated in the example 5.

Therefore, in this example, at first use laser with near the centre wavelength the 600nm.As shown in Figure 9, the LASER Light Source 700 with centre wavelength is provided for this annealing furnace, and the modulation filter 710 that is set on the light path of wavelength in time changes then.

In other words, when impurity mixes layer and is annealed by irradiating laser 700, from the light of measurement light source 210 incidents by photometer measurement.Then, as shown in figure 10, by catching the variation behavior of the absorption coefficient of light, the frequency of (modulation) light 720 of irradiation is changed by operation modulation filter 710.As a result, the impurity that the light that annealing has the wavelength that always is suitable for most light absorption in the period can be irradiated to the surface of contact solid matrix 100 mixes on the layer 110, and annealing efficiency can be maximized thus.This energy that shows irradiation is seldom mixed partially absorbing the layer except impurity.We can say that in order to form " shallow junction " in as the semi-conductor industry of main application fields of the present invention, this method should be the Perfected process that has highest energy efficient and can form extremely shallow knot when finishing.

Example 9

Then, example 9 of the present invention will be described below.

In the superincumbent example 8, the method for the change modulation light wavelength of optical characteristics during the optical characteristics of agreing to impurity to mix layer and the annealing has been described.In this example, mix layer as the impurity of doped layer and should form and satisfy the industrial Wavelength of Laser that obtains easily.The method that has illustrated in the example 7 belongs to this notion particularly.

In other words, Fig. 6 illustrates as reference, and the impurity of setting the high wave-length coverage of the absorption coefficient of light mixes layer and can form by the formation that described impurity mixes layer.When plasma doping is used as the method, illustrated as example 3, thus change condition of plasma and can be formed near the impurity that has the big absorption coefficient of light the used Wavelength of Laser and mix layer by changing Several Parameters.

According to this method, shown in example 4, by in that (so-called original position state (InSitu state)) observes the surperficial (see figure 4) of solid matrix 100 change plasma parameter under the state of plasma producing during the plasma doping always, the final optical characteristics that can obtain to be scheduled to (considering the absorption coefficient of light here).

In addition, for example, doping is applied to for example 5 seconds surperficial scheduled time of solid matrix 100, stop plasma irradiating then once, obtain optical characteristics by the light of measuring from light source 120 then, by feeding back the plasma parameter that this result changes explanation in the example 3, mix layer 110 by carrying out plasma doping formation in next 5 seconds impurity then then.The optical characteristics that the impurity of satisfied selected Wavelength of Laser mixes layer can be provided with by repeating these steps.

In addition, in above embodiment, impurity mixes step and annealing steps is undertaken by the stove that separates.But these steps can be undertaken by identical stove.

In addition, the adjustment of optical characteristics that impurity mixes layer in the annealing steps can form by the film by atmospheric plasma and realize.In other words, when impurity mix the optical characteristics of layer measured and agree to then impurity mix layer physical property change and carry out from the teeth outwards that film forms with compensation because the impurity that the progress of annealing causes when mixing the change of optical characteristics of layer self, can be increased and satisfy annealing conditions thereby impurity mixes absorptivity in the layer.

Describe the present invention in detail with reference to specific embodiment, but for a person skilled in the art clearly, under the situation that does not break away from the spirit and scope of the present invention, can carry out various variants and modifications.

The present invention is based on Japanese patent application No.2003-331330 that submitted on September 24th, 2003 and the Japanese patent application No.2004-065317 that submitted on March 9th, 2004, quote its full content as a reference at this.

＜industrial applicibility 〉

Impurity of the present invention mixes the formation that method and system can be realized meticulous semiconductor regions effectively Such as the formation of shallow junction, the formation of ultrathin membrane etc., and the temperature of the substrate that do not raise, and for such as electric capacity The formation of device, rheostat, diode, transistor, coil etc. is effective and selective for the impurity quilt Be incorporated in large-size substrate such as the crystal liquid substrate etc. and be effectively and do not have temperature to raise.

Claims (31)

1. an impurity mixes method, comprises step:

Impurity is incorporated in the surface of solid matrix;

Measure the optical characteristics that described impurity is impregnated in zone wherein;

Thereby satisfy the described optical characteristics that described impurity is impregnated in described zone wherein based on measurement result selective annealing condition; And

Based on described selected annealing conditions, the described impurity of annealing is impregnated in described zone wherein.

2. impurity according to claim 1 mixes method, and the step of wherein mixing described impurity comprises the plasma doping step.

3. impurity according to claim 1 mixes method, and the step of wherein mixing described impurity comprises the ion implantation step.

4. each the described impurity according to claim 1 to 3 mixes method, and wherein said measuring process carried out before described annealing steps.

5. each the described impurity according to claim 1 to 3 mixes method, and wherein said measuring process and described annealing steps carry out simultaneously.

6. each the described impurity according to claim 1 to 3 mixes method, and wherein said annealing steps is divided into a plurality of periods, and described measuring process carries out between described annealing steps.

7. each the described impurity according to claim 1 to 6 mixes method, and the step of wherein said selected this annealing conditions is included in and makes during this annealing steps this annealing conditions agree to this impurity to mix the change of this optical characteristics in zone and the step that changes in succession.

8. each the described impurity according to claim 1 to 3 mixes method, and wherein this impurity mixes step and is divided into a plurality of periods, and this measuring process mixes between the step at this impurity and carries out.

9. an impurity mixes method, comprises step:

Impurity is incorporated in the surface of solid matrix;

Measure the optical characteristics that described impurity is impregnated in zone wherein;

Thereby adjust this optical characteristics based on measurement result and satisfy annealing conditions; And

The described impurity of annealing is impregnated in this zone wherein.

10. each the described impurity according to claim 1 to 9 mixes method, wherein when the described impurity of monitoring was impregnated in wherein this regional optical constant, control plasma doping condition made this optical constant satisfy the rayed of carrying out after this plasma doping step.

11. each the described impurity according to claim 1 to 9 mixes method, wherein when the described impurity of monitoring is impregnated in wherein this regional optical constant, control ion implantation step makes this optical constant satisfy the rayed that this ion carries out after injecting.

12. each the described impurity according to claim 1 to 11 mixes method, wherein this measuring process is to use the step of ellipsometry.

13. impurity according to claim 12 mixes method, the step of wherein said use ellipsometry comprises that calculating this impurity mixes the thickness of layer and the ellipsometry analytical procedure of optical constant, and this optical constant comprises refractive index n and extinction coefficient k.

14. impurity according to claim 13 mixes method, wherein this ellipsometry analytical procedure comprises the analytical procedure of utilizing any employing refractive index wavelength dispersion model in K-K (Kramers-Kronig) analysis, Tauc-Lorentz analysis, Cody-Lorentz analysis, Forouhi-Bloomer analysis, MDF analysis, frequency range analysis, Tetrahedral analysis, Drude analysis and the Lorentz analysis.

15. each the described impurity according to claim 1 to 12 mixes method, wherein this annealing steps is the electromagnetic step of irradiation.

16. impurity according to claim 15 mixes method, wherein this annealing steps is the step of irradiates light.

17. impurity according to claim 16 mixes method, wherein said step of mixing this impurity is to mix this regional absorption coefficient of light that impurity makes described impurity be impregnated in wherein to surpass 5E4cm ^-1Step.

18. each the described impurity according to claim 2 to 17 mixes method, wherein this plasma doping step comprise control be applied to this plasma supply voltage, this plasma composition and contain at least a step in the ratio of irradiation time and the irradiation time of this plasma that does not contain this dopant species of this plasma of dopant species.

19. impurity according to claim 18 mixes method, wherein this plasma doping step comprises that the inert substance or the mixing between the reactive material of the material that impurity substances and conduct by change constituting this plasma mix with this impurity substances recently control the step of the composition of this plasma, thereby controls this optical characteristics that described impurity is impregnated in this zone wherein.

20. each the described impurity according to claim 2 to 17 mixes method, wherein this plasma doping step is set this optical constant that described impurity is impregnated in this zone wherein, and the electricity activation that makes described impurity be impregnated in this impurity that comprises in wherein this zone is accelerated and the energy absorption in this solid matrix is suppressed.

21. an impurity mixes system, comprising:

Impurity mixes device, and it is used for impurity is incorporated into the surface of solid matrix;

Measurement mechanism, it is used to measure the optical characteristics that described impurity is impregnated in zone wherein;

Annealing device, its described impurity that is used to anneal is impregnated in this zone wherein.

22. impurity according to claim 21 mixes system, wherein to mix device be the plasma doping apparatus that is used for this impurity is incorporated into the surface of this solid matrix to this impurity.

23. impurity according to claim 21 mixes system, wherein to mix device be the ion implantation apparatus that is used for this impurity is injected into the surface of this solid matrix to this impurity.

24. impurity according to claim 22 mixes system, also comprises:

The doping control device, it is used for controlling this plasma doper based on the measurement result of this measurement mechanism.

25. impurity according to claim 23 mixes system, also comprises:

The doping control device, it is used for controlling this ion implantation apparatus based on the measurement result of this measurement mechanism.

26. impurity according to claim 21 mixes system, also comprises:

The annealing control device, it is used for controlling this annealing device based on the measurement result of this measurement mechanism.

27. each the described impurity according to claim 21 to 26 mixes system, also comprises:

Feedback mechanism, it is used for the measurement feedback of this measurement mechanism is mixed any of control device to this annealing control device or this impurity.

28. impurity according to claim 27 mixes system, wherein this feedback mechanism original position is carried out the feedback of measurement result.

29. impurity according to claim 28 mixes system, wherein this feedback mechanism to be surveying sample at a high speed, and if the result bad, carry out then that additional technique is for example additionally mixed, annealing conditions relaxes etc.

30. an electronic device, it mixes impurity by each described impurity method of mixing of utilizing claim 1 to 20 and forms.

31. an electronic device, it forms by utilizing the described impurity of each of claim 21 to 29 system of mixing to mix impurity.

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