CN1853297A - Electrochemical energy source, electronic device and method of manufacturing said energy source - Google Patents
Electrochemical energy source, electronic device and method of manufacturing said energy source Download PDFInfo
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- CN1853297A CN1853297A CN 200480026440 CN200480026440A CN1853297A CN 1853297 A CN1853297 A CN 1853297A CN 200480026440 CN200480026440 CN 200480026440 CN 200480026440 A CN200480026440 A CN 200480026440A CN 1853297 A CN1853297 A CN 1853297A
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Abstract
The invention relates to an electrochemical energy source comprising at least one assembly of: a first electrode, a second electrode, and an intermediate solid-state electrolyte separating said first electrode and said second electrode. The invention also relates to an electronic module provided with such an electrochemical energy source. The invention further relates to an electronic device provided with such an electrochemical energy source. Moreover, the invention relates to a method of manufacturing such an electrochemical energy source.
Description
The present invention relates to a kind of electrochemical energy, it comprises at least one following assembly: first electrode, second electrode and the intermediate solid-state electrolyte of separating described first electrode and described second electrode.The invention still further relates to the electronic device that is provided with this electrochemical energy.And, the invention still further relates to the method for making this electrochemical energy.
Electrochemical energy based on solid electrolyte is known in the art.As start and construct these (plane) energy or " solid state battery " described.Solid state battery is directly changed into electric energy with chemical energy effectively and neatly, and is used as the power supply of portable electron device usually.On lower level, this battery for example can be used to that micromodule, especially integrated circuit (IC) provide electric energy.Its example discloses in International Patent Application WO 00/25378, wherein solid-state thin-film micro battery is fabricated directly on the particular substrate.During this manufacturing process, first electrode, intermediate solid-state electrolyte and second electrode are deposited on the substrate successively.Although compare with other solid state battery, known minicell presents excellent performance usually, and known minicell has several shortcomings.The major defect of the known micro battery of WO 00/25378 is its manufacturing process relative complex, and is therefore relatively costly.
The purpose of this invention is to provide a kind of improved electrochemical energy, can construct and make it, keep the advantage of known electrochemical energy source simultaneously with simple relatively mode.
The objective of the invention is to it is characterized in that by realizing: form described first electrode by electrically-conductive backing plate, the deposit solid electrolyte and second electrode on this electrically-conductive backing plate to small part according to the described electrochemical energy of beginning.By this way, electronics-electrically-conductive backing plate also is used as at least a portion of first electrode.Compare integrated simpler (miniature) battery structure that causes usually of at least a portion of described substrate and described first electrode with battery well known in the prior art.And the method for the energy constructed in accordance is also simpler, because can omit at least one processing step.Relative simple manufacturing method according to solid state energy sources of the present invention also causes saving significantly cost.Preferably, with solid electrolyte and second electrode as thickness greatly the thin layer between 0.5 and 5 micron be deposited on the substrate.Thin layer causes higher current density and efficient, compares ion transfer in the energy to pass thin layer easier and quicker because pass thick film layers with transmission.In this way, can make inner energy consumption minimum.Because the internal resistance of the energy is low relatively, therefore when using the rechargeable energy, can increase charging rate.
In a preferred embodiment, at least in part real estate is carried out composition to the contact surface of the electrolyte and second electrode.In this way, reach the increase of the contact surface of the per unit volume between two electrodes and the solid electrolyte.Usually, cause improved energy rated capacity (rate capacity), therefore cause better battery capacity (because optimum utilization of the volume of the layer of the energy) according to this increase of the contact surface between the parts of the energy of the present invention.In this way, can make the power density maximization of the energy, so optimization.The character of figure, shape and size can be arbitrarily.
Generally speaking, can carry out composition to contact surface in various manners, for example, by for contact surface provides extension, it is outwards outstanding away from contact surface.Preferably, contact surface is provided with a plurality of chambeies with arbitrary shape and size, described electrolyte and described second electrode is set at least a portion of inner surface in described chamber.This advantage that has is: can make patterned contact surface with simple relatively mode.In one embodiment, connection chamber makes a plurality of outstanding posts be formed on the substrate, so that increase the contact surface in the electrochemical energy.In another preferred embodiment, at least a portion chamber forms slit or groove, wherein the deposit solid electrolyte and second electrode.Figure on the contact surface of electrically-conductive backing plate, especially chamber for example can form by etching.
At least one preferred coupled in first electrode and second electrode is to current-collector.Under the situation of silicon substrate, first electrode can not need current-collector.Yet, for for example with LiCoO
2Electrode preferably uses aluminum current collector (layer) as the Li-ion battery of second electrode.Alternatively, or additionally, preferably with can generally being used as of mixing according to the current-collector in the solid state energy sources of the present invention such as the semi-conducting material of Si, GaAs, InP or such as the current-collector that the metal of copper or nickel is made.
Substrate can have first type surface, forms the chamber thereon or wherein, and it limits the plane.Current-collector can be overlapped with the upright projection of chamber on this plane at least in the upright projection on this plane, and preferably overlaps at least with all upright projection of chamber on this plane.In this way, near the chamber, this has increased maximum current to current-collector relatively.In one embodiment, current-collector extends in the chamber, preferably extends in all chambeies.This causes further increasing rated capacity.This is favourable for the chamber that promptly has 20 microns or the above degree of depth relatively deeply.
In one embodiment, substrate is applicable to that (temporarily) stores the ion of at least a atom in the following atom: H, Li, Be, Mg, Na and K.Therefore, can therefore be suitable for forming different types of battery, for example Li ion battery, NiMH battery etc. based on various insertion mechanisms (intercalation mechanism) according to electrochemical energy of the present invention.
In another embodiment, substrate is by at least a the making in the following material: C, SiSn, Ti, Ge and Pb.The combination of these materials also can be used for forming substrate.Preferably, n type or p type doped silicon be as substrate, and the perhaps related compound of doped silicon is as SiGe or SiGeC.And other suitable materials also can be used as substrate, as long as the material of substrate is suitable for inserting and storing the ion of the atom of for example being mentioned in the last period.And these materials preferably are suitable for carrying out etch process, so that apply figure (hole, groove, post etc.) on the contact surface of substrate.
Be applied in according to the solid electrolyte in the energy of the present invention and can for example be used for the ion conductor of H, Li, Be and Mg based on mechanism of ionic conduction or non-electron conduction mechanism.Example as the Li conductor of solid electrolyte is LiPON (LiPON).Other known solid electrolyte is lithium silica nitrogen (LiSiON), lithium niobate (LiNbO for example
3), lithium tantalate (LiTaO
3), positive tungstate lithium (Li
2WO
4) and lithium germanium oxynitride (LiGeON) also can be as lithium conduction solid electrolyte.Portion conductive electrolyte for example can pass through TiO (OH) and form.Details about portion conductive electrolyte disclose in International Application No. WO 02/42831.First (just) electrode that is used for the lithium ion based energy can for example be a positive electrode, and can be by metal-oxide based material LiCoO for example
2, LiNiO
2, LiMnO
2Or the combination of these materials Li (NiCoMn) O for example
2Make.The example of first (just) electrode under the situation of the proton base energy is Ni (OH)
2And NiM (OH)
2, wherein M is formed by one or more elements in the group that is selected from for example Cd, Co or Bi.
In another embodiment, the solid electrolyte and second electrodeposition are on a plurality of sides of substrate.In this way, further strengthen using substrate to come storage of ions, increase capacitance thus according to electrochemical energy of the present invention.
Preferably, electrochemical energy comprises electric coupling a plurality of assemblies together.These assemblies can be coupled according to series connection and/or parallel way, depend on the application requirements of electrochemical energy.When requiring high relatively electric current, first electrode and second electrode in the several assemblies of electric coupling in parallel.When requiring high relatively voltage, first electrode of first assembly can be electrically coupled to second electrode of second assembly, and first electrode of second assembly can be electrically coupled to second electrode of the 3rd assembly or the like.
Substrate can comprise first parts that constitute first electrode and second parts that do not contact with first parts.Second parts can comprise the electronic device that is integrated in second parts.Preferably, substrate comprises and is used to reduce and prevents basically that preferably ion is diffused into the barrier layer of second parts from first parts.When for example making substrate be applicable to storage Li ion by the employing silicon wafer, this barrier layer can be by Si
3N
4Or SiO
2Form, come out from first electrode (wafer) so that prevent the Li ion.
Preferably, substrate is by support construction supports, so that consolidate electrochemical energy.Under specific circumstances, wish to use this supporting construction.For example, if use titanium or comprise that the titanium of substrate is used for storing hydrogen at the battery that has according to structure of the present invention, then supporting construction can be used to strengthen the structure of the energy.It should be noted that titanium-base can be made by (temporarily) dielectric layer, deposit substrate on described dielectric layer.After this depositing technics, can remove dielectric layer.In order further to support titanium-base, can use non-conductive supporting construction.Advantageously come part to remove substrate, improve the energy density of the energy thus by reducing its thickness.For example, can be that to become thickness be the substrate of about 10-200 micron to about 500 microns substrate transfer from thickness with the energy.In order to carry out this adjustment of substrate, can use (known) ' substrate transfer technology '.
In a preferred embodiment, first electrode comprises and is applicable to that avoiding inserting ion (intercalating ion) at least basically is diffused into electron conduction barrier layer in the described substrate, is applied to described barrier layer on the described substrate.This preferred embodiment is normally very favorable, because participation often is diffused in the substrate according to the insertion ion of (again) charging cycle of electrochemical energy of the present invention, make these ions no longer participate in (again) charging cycle, cause the storage volume of electrochemical energy to reduce.Generally, adopt the monocrystalline silicon conductive substrate to carry electronic component, for example integrated circuit, chip, display etc.The defective that this monocrystalline silicon substrate exists is to insert ion relatively easily to be diffused in the described substrate, causes the capacity of the described energy to reduce.For this reason, the described unfavorable diffusion that the barrier layer is applied on the described substrate to avoid entering into substrate is very favorable.To stop the migration of inserting ion at least basically by described barrier layer, the migration that these ions pass substrate will consequently no longer take place, remain possible and electronics passes the migration of described substrate.According to present embodiment, no longer need substrate to be suitable for storing and insert ion.Therefore, can also adopt the electron conduction substrate that is different from silicon substrate, for example the substrate of making by metal, conducting polymer etc.Described barrier layer is at least basically by at least a the making in the following compound: tantalum, tantalum nitride and titanium nitride.Yet the material on barrier layer is not limited to these compounds.These compounds have the relative compact texture as denominator, and this compact texture can't see through for the insertion ion that comprises lithium ion.In particular preferred embodiment, first electrode also comprises the insert layer that is deposited on the side relative with substrate of described barrier layer.Described insert layer is thus suitable for storing (and release) and inserts ion (temporarily).According to present embodiment, first electrode is formed by the lamination of described substrate, described barrier layer and described insert layer thus.Generally, by barrier layer and insert layer stacked (deposit) formed this lamination on described substrate.Yet, in specific embodiments, can also form lamination by injection technique, wherein for example use for example tantalum ion and nitrogen ion bombardment crystalline silicon substrates, fully raise afterwards and be injected into the temperature of substrate, be buried in physical barriers layer in the described initial substrate with formation.As result with the ion bombardment silicon substrate, will destroy the lattice of the crystal top layer of initial substrate usually, cause forming the amorphous top layer of described insert layer.In a preferred embodiment, described insert layer is at least basically by silicon, preferably be made of amorphous silicon.Amorphous silicon layer has per unit volume and stores (with discharging) the relative outstanding characteristic of inserting ion in a large number, and this causes the raising according to the storage capacity of electrochemical energy of the present invention.Preferably, with described barrier layer deposition to described substrate.Preferably described barrier layer and described insert layer are deposited on the described substrate by low pressure chemical vapor deposition (LPCVD).
The invention still further relates to the electronic building brick that is provided with at least one this electrochemical energy.This electronic building brick can pass through formation such as integrated circuit (IC), microchip, display.Can construct the combination of electronic building brick and electrochemical energy with monolithic or non-single chip mode.Under the situation of the described combination of monolithic construction, the barrier layer that preferably will be used for ion is applied between the electronic building brick and the energy.In one embodiment, electronic building brick and electrochemical energy form system in package (SiP).This encapsulation container preferably non-conductive and that be formed for combinations thereof.In this way, can provide independently ready-made available SiP, wherein except electronic building brick, also be provided with according to the energy of the present invention.
The invention still further relates to and be provided with at least one this electrochemical energy, or preferably, the electronic device of a this electronic building brick.The example of this electronic device is a shaver, and wherein electrochemical energy for example can be used as standby (or elementary) power supply.Can be the what is called " smart card " that contains microprocessor chip wherein in conjunction with another example of the electronic device of the energy of the present invention.The present independent bulky card reader of smart card needs shows the information on the chip that is stored in card.But, utilizing to be preferably flexibility, miniature battery, smart card for example can comprise originally on one's body small relatively display screen of card, the permission user easily visits the data that are stored on the smart card.
And the invention still further relates to the manufacture method of this electrochemical energy, may further comprise the steps: A) solid electrolyte is deposited on the substrate; And B) subsequently with second electrodeposition on substrate.Applying steps A) and step B) during, one of following deposition technology preferably used: physical vapor deposition (PVD), chemical vapor deposition (CVD) and atom vapour deposition (AVD).The example of PVD is that sputter and laser are eliminated (laser ablation), needs the groove width of 〉=20 micron dimensions usually.The example of CVD is LP-CVD and atomic layer deposition (ALD).AVD preferably carries out under relatively low pressure (approximately 150mbar or following).These technology are known in those skilled in the art, and the aperture in the substrate of permission＞0.5 micron dimension.
In a preferred embodiment, this method have comprise the step C that at least one contact surface of substrate is carried out composition), in steps A) execution in step C before).As mentioned above, the composition of substrate surface has been increased the contact surface of per unit volume of the different elements of the energy, increased rated capacity thus.In one embodiment, etching technique can be used for composition, as wet chemical etch and dry etching.The known example of these technology is RIE and focused ion beam (FIB).
In the embodiment of this method, the method comprising the steps of D), it comprises subsequently electron conduction barrier layer and insert layer is deposited on the substrate.Step D) can be in steps A) carry out before.
The present invention will be described by following nonrestrictive example, wherein:
Fig. 1 illustrates the perspective view according to electrochemical energy of the present invention;
Fig. 2 illustrates the profile according to another electrochemical energy of the present invention;
Fig. 3 illustrates the schematic diagram according to monolithic system level encapsulation of the present invention;
Fig. 4 illustrates the perspective view according to optional minicell of the present invention.
Fig. 1 illustrates the perspective view according to electrochemical energy 1 of the present invention, more particularly is according to Li ion micro battery of the present invention.The energy 1 comprises the silicon substrate 2 as the negative electrode of the energy 1.Silicon substrate 2 for example can be formed by the silicon wafer through being usually used in IC.Substrate 2 can have greater than 20 microns, greater than 100 microns or even greater than 500 microns thickness.In the upper surface 3 of silicon substrate 2, by the existing several slits 4 of etching technique etching.The size of these slits 4 can be arbitrarily.Preferably, the width of slit 4 is greatly between 2 and 10 microns, and the degree of depth of slit 4 is greatly between 10 and 100 microns.On the upper surface 4 of composition, deposit solid-state electrolyte layer 5.Dielectric substrate 5 has about 1 micron thickness, and preferably is made of LiPON (LiPON).On LiPON layer 5, the positive electrode layer 6 of about 1 micron thickness of deposit.Positive electrode 6 is preferably by LiCoO
2Constitute, may be mixed with carbon fiber.By the deposition technology of routine, for example chemistry or physical vapor deposition, and atomic layer deposition are deposited to electrolyte 5 and positive electrode 6 on the upper surface 4 of substrate 2.By etching substrates 2, can (significantly) increase by two electrodes 2,6 of per unit volume and the contact surface between the electrolyte 5, cause the rated capacity in the energy 1 and the raising (maximization) of power density.Randomly, the aluminum current collector (not shown) can be coupled to positive electrode 6.The structure of the shown energy 1 is effective relatively and simple structure, relatively easily makes in addition.And, be in contact with one another surface maximization, the performance of the energy 1 shown in optimizing by making electrolytical bed thickness minimize and make between the element 2,5 and 6 of the energy 1.
Fig. 2 illustrates the profile according to another electrochemical energy 7 of the present invention.The energy 7 comprises the substrate 8 as the negative electrode of the energy 7.Upper surface 9 and lower surface 10 to substrate 8 carry out composition.Form figure by the chamber 11,12 that is etched in the substrate 8.The deposit dielectric substrate 13,14 on upper surface 9 and lower surface 10.Subsequently at the deposited on top positive electrode 15,16 of each dielectric substrate 13,14.Positive electrode 15,16 (at least) is separately partly covered by current-collector 17,18.Current-collector 17,18 is the coupling (not shown) mutually.Substrate 8 also is provided with current-collector 19 separately.The insertion mechanism of using in this energy 7 and the material of use can change.The shown energy 7 for example can form Li ion (miniature) battery or NiMH battery.As previously mentioned, in order to improve the energy density of the energy 7, composition is carried out on the surface 9,10 of substrate 8.In the time for example can being used for ion storage simultaneously, can obtain the relatively effectively structure of the energy 7 as the substrate 8 of chip carrier.
Fig. 3 illustrates the schematic diagram according to monolithic system level encapsulation (SiP) 20 of the present invention.SiP comprise electronic building brick or device 21 and with its coupling according to electrochemical energy 22 of the present invention.Come separately electronic building brick or the device 21 and the energy 22 by barrier layer 23.Electronic building brick or device 21 are installed on the identical monolithic substrate (not shown) and/or based on identical monolithic substrate with the energy 22.The structure of the energy 22 can be arbitrarily, as long as substrate is used as the storage medium of (temporarily) ion and thus serves as electrode.Electronic building brick or device 21 can pass through for example formation such as display, chip, control unit.In this way, can form many independently (ready-made available) device with simple relatively mode.
Fig. 4 illustrates the perspective view according to optional minicell 24 of the present invention, is the Li ion battery specifically.Minicell 24 comprises first electrode 25, second electrode 26 and places solid electrolyte 27 between two electrodes 25,26.In this example, first electrode 25 is the negative electrodes 25 by the lamination formation of electron conduction substrate 28, electron conduction barrier layer 29 and insert layer 30.Etching technique by routine is carried out composition to substrate 28, so that increase the contact surface of (and inner) between the described layer 25,26,27 of described minicell 24, causes the raising of battery capacity.By the deposition technology of routine, by low pressure chemical vapor deposition (LPCVD) barrier layer 29 and insert layer 30 are deposited on the described substrate 28 usually.Described substrate 28 can be made by any electronic conductive material, and for example metal or conducting polymer are still made by monocrystalline silicon usually.But owing to be used for this Material Used of described substrate 28, substrate can by rigid material for example silicon or flexible material some electronic conductive polymer of for example resembling polyacetylene and poly (phenylenevinylene) (PPV) make.According to the application of minicell 24, can select suitable material to be used for described substrate 28.For fear of inserting the lithium ion excess diffusion in described silicon substrate 28, this will cause battery efficiency and battery life significantly to reduce, and apply described barrier layer 29.This barrier layer 29 is preferably formed by the compound that contains tantalum and/or titanium, as tantalum, tantalum nitride, titanium nitride etc.These compounds all have low relatively ratio resistance.This electron conduction layer 29 has fine and close relatively structure, has the permeability that reduces for inserting ion, and therefore described ion is difficult to be diffused in the described substrate 28.Therefore the insertion mechanism of first electrode is determined by described insert layer 30 basically, and it is particularly suitable for temporary transient storage and discharges inserting lithium ion.Barrier layer 29 preferably has the bed thickness between 20 and 100 nanometers, more preferably between 50 and 100 nanometers.Insert layer 30 is made of silicon usually, preferably is made of amorphous silicon.The bed thickness of this insert layer 30 preferably between 30 and 100 nanometers, more preferably about 50 nanometers.Described solid electrolyte 27 preferred LiPON, the LiNbO of passing through
3, LiTaO
3, Li
2WO
4Deng formation.Described second positive electrode 26 passes through LiCoO
2Compound forms.First negative electrode 25 is connected on the connector 31 on the upper surface that is positioned at described minicell 24.Randomly, the lamination top of minicell 24 shown in the extra play (not shown) can being applied to is to provide the protection to described minicell 24.In this specific embodiments, top layer is preferably formed by the additional barrier on the barrier layer 29 that equals first electrode 25, is locked in the described minicell 24 so that will insert lithium ion, has wherein limited the migration freedom of inserting lithium ion, the capacity that can keep as a result, minicell 24.This causes the battery efficiency that improves and the life-span of raising.Must be clear that the present invention never is limited to previous embodiment.In the framework of claims, various other embodiment are possible, and this it will be apparent to those skilled in the art that.
Claims (21)
1, a kind of electrochemical energy (1,7,22) comprises at least one following assembly:
First electrode (2,8),
Second electrode (6,15,16), and
The intermediate solid-state electrolyte (5,13,14) of separating described first electrode (2,8) and described second electrode (6,15,16),
It is characterized in that forming described first electrode (2,8) by electrically-conductive backing plate (2,8) to small part, on described electrically-conductive backing plate deposit described solid electrolyte (5,13,14) and described second electrode (6,15,16).
2, electrochemical energy according to claim 1 (1,7,22) is characterized in that described electrolyte (5,13,14) and described second electrode (6,15,16) are applied to the contact surface (3,9,10) of the patterned described substrate of small part (2,8).
3, electrochemical energy according to claim 2 (1,7,22), it is characterized in that described contact surface (3,9,10) is provided with a plurality of chambeies (4,11,12) of arbitrary shape, described electrolyte (5,13,14) and described second electrode (6,15,16) are applied at least a portion of inner surface in described chamber (4,11,12).
4, electrochemical energy according to claim 3 (1,7,22) is characterized in that at least a portion in described chamber (4,11,12) forms slit (4).
5,, it is characterized in that in described first electrode (2,8) and described second electrode (6,15,16) at least one is coupled on the current-collector (17,18) according to each described electrochemical energy (1,7,22) in the aforementioned claim.
6,, it is characterized in that described substrate (2,8) is suitable for storing the ion of at least a atom in the following atom: H, Li, Be, Mg, Na and K according to each described electrochemical energy (1,7,22) in the aforementioned claim.
7,, it is characterized in that described substrate (2,8) is made of at least a in the following material: C, Sn, Ge, Pb and the silicon that preferably is doped according to each described electrochemical energy (1,7,22) in the aforementioned claim.
8,, it is characterized in that described solid electrolyte (5,13,14) and described second electrode (6,15,16) are deposited on a plurality of sides (9,10) of described substrate (2,8) according to each described electrochemical energy (1,7,22) in the aforementioned claim.
9,, it is characterized in that described substrate (2,8) is coated with the barrier layer (23) that is used for ion at least in part according to each described electrochemical energy (1,7,22) in the aforementioned claim.
10,, it is characterized in that described substrate (2,8) is by support construction supports according to each described electrochemical energy (1,7,22) in the aforementioned claim.
11, according to each described electrochemical energy (1,7,22) in the aforementioned claim, it is characterized in that described first electrode (2,8) comprises is suitable for avoiding at least basically with inserting the electron conduction barrier layer of ions diffusion in the described substrate (2,8) described barrier layer being applied on the described substrate (2,8).
12, electrochemical energy according to claim 11 (1,7,22) is characterized in that described first electrode also comprises the insert layer that is deposited on the side relative with described substrate of described barrier layer.
13, electrochemical energy according to claim 12 (1,7,22) is characterized in that described insert layer is at least basically by silicon, preferably be made of amorphous silicon.
14, according to each described electrochemical energy (1,7,22) among the claim 11-13, it is characterized in that described barrier layer deposition to described substrate.
15,, it is characterized in that described barrier layer is made of at least a in the following compound at least basically: tantalum, tantalum nitride, titanium and titanium nitride according to each described electrochemical energy (1,7,22) among the claim 11-14.
16, a kind of electronic device (21) is provided with at least one according to each described electrochemical energy (1,7,22) among the claim 1-15.
17, electronic device according to claim 16 (21) is characterized in that described electronic device forms by integrated circuit (IC).
18,, it is characterized in that described electronic device and described electrochemical energy (1,7,22) form system in package (SiP) (20) according to claim 16 or 17 described electronic devices (21).
19, a kind of method of making according to each described electrochemical energy (1,7,22) among the claim 1-15 may further comprise the steps:
A) described solid electrolyte (5,13,14) is deposited on the described substrate (2,8), and
B) subsequently described second electrode (6,15,16) is deposited on the described substrate (2,8).
20, method according to claim 19 is characterized in that this method has and comprises the step C that at least one contact surface (3,9,10) of described substrate (2,8) is carried out composition), step C wherein) in steps A) carry out before.
21, according to claim 19 or 20 described methods, it is characterized in that this method have comprise subsequently electron conduction barrier layer and insert layer are deposited on step D on the described substrate (2,8)), step D wherein) be in steps A) carry out before.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03103386.3 | 2003-09-15 | ||
| EP03103386 | 2003-09-15 | ||
| EP04102887.9 | 2004-06-22 |
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| CN1853297A true CN1853297A (en) | 2006-10-25 |
| CN100423334C CN100423334C (en) | 2008-10-01 |
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| CN104040767A (en) * | 2011-11-21 | 2014-09-10 | 英飞凌科技奥地利有限公司 | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit |
| CN104953166A (en) * | 2014-03-31 | 2015-09-30 | 英飞凌科技股份有限公司 | Lithium ion battery, integrated circuit and method of manufacturinga lithium ion battery |
| US9614256B2 (en) | 2014-03-31 | 2017-04-04 | Infineon Technologies Ag | Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery |
| CN107528045A (en) * | 2016-06-21 | 2017-12-29 | 罗伯特·博世有限公司 | For manufacturing the method and battery cell of negative electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3765094B2 (en) * | 1996-12-28 | 2006-04-12 | 株式会社ジーエス・ユアサコーポレーション | Non-aqueous electrolyte battery |
| US6197450B1 (en) * | 1998-10-22 | 2001-03-06 | Ramot University Authority For Applied Research & Industrial Development Ltd. | Micro electrochemical energy storage cells |
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| CN104040767A (en) * | 2011-11-21 | 2014-09-10 | 英飞凌科技奥地利有限公司 | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit |
| US9269961B2 (en) | 2011-11-21 | 2016-02-23 | Infineon Technologies Austria Ag | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit |
| US9531035B2 (en) | 2011-11-21 | 2016-12-27 | Infineon Technologies Austria Ag | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit |
| CN109638272A (en) * | 2011-11-21 | 2019-04-16 | 英飞凌科技股份有限公司 | Lithium battery, the method for manufacturing lithium battery, integrated circuit and the method for manufacturing integrated circuit |
| CN104953166A (en) * | 2014-03-31 | 2015-09-30 | 英飞凌科技股份有限公司 | Lithium ion battery, integrated circuit and method of manufacturinga lithium ion battery |
| US9614256B2 (en) | 2014-03-31 | 2017-04-04 | Infineon Technologies Ag | Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery |
| CN104953166B (en) * | 2014-03-31 | 2018-03-06 | 英飞凌科技股份有限公司 | Lithium ion battery, integrated circuit and the method for manufacturing lithium ion battery |
| US9917333B2 (en) | 2014-03-31 | 2018-03-13 | Infineon Technologies Ag | Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery |
| US9929438B2 (en) | 2014-03-31 | 2018-03-27 | Infineon Technologies Ag | Method of manufacturing a lithium ion battery |
| US10749216B2 (en) | 2014-03-31 | 2020-08-18 | Infineon Technologies Ag | Battery, integrated circuit and method of manufacturing a battery |
| CN107528045A (en) * | 2016-06-21 | 2017-12-29 | 罗伯特·博世有限公司 | For manufacturing the method and battery cell of negative electrode |
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| CN100423334C (en) | 2008-10-01 |
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