CN1848404A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- CN1848404A CN1848404A CN 200510126383 CN200510126383A CN1848404A CN 1848404 A CN1848404 A CN 1848404A CN 200510126383 CN200510126383 CN 200510126383 CN 200510126383 A CN200510126383 A CN 200510126383A CN 1848404 A CN1848404 A CN 1848404A
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- CN
- China
- Prior art keywords
- heater
- electrostatic chuck
- pedestal
- insulating barrier
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The present invention relates to an electrostatic chuck which has a heater and whose surface insulating layer is sintered ceramics. The invented electrostatic chuck includes the following several portions: base seat, chuck surface insulating layer and heater positioned between base seat and chuck surface insulating layer, in which on the described chuck surface insulating layer one side adjacent to said base seat is equipped with recessed groove, the heater is inlaid in the recessed groove, and the partial recessed groove wall on the chuck surface insulating layer can be formed into a protective ring for protecting said heater.
Description
Technical field
The present invention relates to the electrostatic chuck in the semiconductor etching device, particularly a kind of with heater and surface insulation layer be the electrostatic chuck of sintered ceramic.
Background technology
Electrostatic chuck is widely used in the manufacturing process of making integrated circuit (IC) or MEMS device, is used in reaction chamber supporting wafers, the temperature on Dc bias and control wafer surface is provided for wafer.In some technology, owing to need the surface temperature of wafer higher, wish that perhaps wafer surface temperature can regulate apace, rely on the temperature of cooler (Chiller) control chuck can not satisfy the needs of technology merely.Therefore heater will added usually in electrostatic chuck.As shown in Figure 1, at present the band heaters that great majority adopt in the semiconductor etching device and surface insulation layer be that the electrostatic chuck structure of sintered ceramic comprises that upper surface is circular aluminium matter pedestal 1, card insulating barrier 2 and the heater 3 between pedestal 1 and card insulating barrier 2, wherein between card insulating barrier 2 and the heater 3, between heater 3 and the pedestal 1 with each having the silicon rubber adhesive linkage.Because heater 3 can not be exposed to reaction environment, the diameter of therefore general heater 3 is less than the diameter of card insulating barrier 2 and the diameter of pedestal 1 upper surface, and the part that lacks is filled with epoxy resin, has formed epoxy resin ring 4.The thickness of heater 3 is generally 0.5 millimeter to 1 millimeter, and the thickness of epoxy resin is the thickness that the thickness of heater 3 is added adhesive linkage, generally need be in 1 millimeter.In course of reaction, epoxy resin ring 4 is corroded by plasma easily, and peels off easily, thereby has influenced the useful life of electrostatic chuck.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is to provides a kind of electrostatic chuck of long service life at above-mentioned the deficiencies in the prior art.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Electrostatic chuck of the present invention; comprise pedestal, card insulating barrier and the heater between pedestal and card insulating barrier; contiguous base side is provided with groove on the wherein said card insulating barrier; described heater is embedded in this groove, and the groove walls on the card insulating barrier partly is formed for protecting the guard ring of heater.
Be provided with the epoxy resin ring between wherein said guard ring and the pedestal.
Wherein said guard ring and pedestal link together.
Wherein be respectively equipped with the silicon rubber adhesive linkage between guard ring and pedestal, the heater.
(3) beneficial effect
The advantage and the good effect of electrostatic chuck of the present invention are: among the present invention, heater is embedded in the groove of card insulating barrier, and groove walls partly is formed for protecting the guard ring of heater.Guard ring is and card insulating barrier integrative-structure; be that guard ring is that ceramic material is made, because the corrosion resistance of ceramic material is far longer than epoxy resin, so the heater among the present invention has obtained protection more fully; so long service life, therefore also prolonged the useful life of electrostatic chuck.
Description of drawings
Fig. 1 is the partial sectional view of existing electrostatic chuck;
Fig. 2 is the partial sectional view of first kind of embodiment of electrostatic chuck of the present invention;
Fig. 3 is the partial sectional view of second kind of embodiment of electrostatic chuck of the present invention.
Among the figure: 1. pedestal; 2. card insulating barrier; 3. heater; 4. epoxy resin ring; 5. guard ring.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of electrostatic chuck of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 2.First kind of example structure of electrostatic chuck of the present invention comprises that upper surface is circular aluminium matter pedestal 1, card insulating barrier 2 and the heater 3 between pedestal 1 and card insulating barrier 2 that sintered ceramic material is made.Contiguous pedestal 1 one sides are provided with groove on the card insulating barrier 2; described heater 3 is embedded in this groove; groove walls on the card insulating barrier 2 partly forms the guard ring 5 of heater 3, and guard ring 5 is used to protect heater 3, avoids being corroded by the reacting gas in the reative cell.Between guard ring 5 and pedestal 1, be provided with epoxy resin ring 4.In the present embodiment, be used to protect heater 3 to avoid the corrosion part to comprise two parts, promptly guard ring 5 and epoxy resin ring 4 are compared with existing electrostatic chuck, have reduced the thickness of epoxy resin ring 4.Because guard ring 5 is structure as a whole with card insulating barrier 2, so the material of guard ring 5 is identical with the material of card insulating barrier 2, is sintered ceramic material.Because the corrosion resistance of sintered ceramic is far longer than epoxy resin, so the heater 3 in the present embodiment has obtained more perfect protection, long service life, thus prolonged useful life of electrostatic chuck.
Thickness behind electrostatic chuck card insulating barrier 2 ceramic post sinterings removes unnecessary part by machining generally greater than the thickness of actual needs behind sintering.In the present embodiment, the ceramic thickness behind the sintering is 4mm, through initial processing, makes diameter, the wafer of pottery satisfy technical requirement, and as surface planarity, after the roughness, remaining ceramic thickness is 3.5mm, and diameter is 297mm; Heater thickness is 0.8 millimeter, and diameter is 293mm.Epoxy resin ring 4 thickness are 0.6 millimeter, and diameter is 294mm.
Referring to Fig. 3.Second kind of example structure and first kind of embodiment of electrostatic chuck of the present invention are basic identical, also comprise pedestal 1, card insulating barrier 2, heater 3, and card insulating barrier 2 is provided with the guard ring 5 with its one.Difference only is: in this embodiment, do not have the epoxy resin ring, guard ring 5 directly links together by the silicon rubber adhesive linkage with pedestal 1, also is provided with the silicon rubber adhesive linkage between guard ring 5 and the heater 3.Protection to heater 3 is realized by the strong guard ring 5 of corrosion resistance fully, like this, has further prolonged the long service life of heater 3 on the basis of embodiment one, thereby has further prolonged the useful life of electrostatic chuck.
In sum, can reduce the thickness of the epoxy resin layer of corrosion resistance difference in the electrostatic chuck of the present invention, in addition the use of cancellation epoxy resin layer, replace the strong ceramic guard ring 5 of corrosion resistance, prolonged the useful life of electrostatic chuck significantly.Facts have proved (after tested): electrostatic chuck of the present invention is compared with existing electrostatic chuck of the same type, prolongs 1.5～2 times useful life.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (4)
1. electrostatic chuck; comprise pedestal (1), card insulating barrier (2) and be positioned at pedestal (1) and card insulating barrier (2) between heater (3); it is characterized in that upward contiguous pedestal (1) side of described card insulating barrier (2) is provided with groove; described heater (3) is embedded in this groove, and the groove walls on the card insulating barrier (2) partly is formed for protecting the guard ring (5) of heater (3).
2. electrostatic chuck according to claim 1 is characterized in that being provided with epoxy resin ring (4) between described guard ring (5) and the pedestal (1).
3. electrostatic chuck according to claim 1 is characterized in that described guard ring (5) and pedestal (1) link together.
4. electrostatic chuck according to claim 3 is characterized in that described guard ring (5) and pedestal (1), heater are respectively equipped with the silicon rubber adhesive linkage between (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263838A CN100370592C (en) | 2005-12-08 | 2005-12-08 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263838A CN100370592C (en) | 2005-12-08 | 2005-12-08 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1848404A true CN1848404A (en) | 2006-10-18 |
| CN100370592C CN100370592C (en) | 2008-02-20 |
Family
ID=37077896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101263838A Active CN100370592C (en) | 2005-12-08 | 2005-12-08 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100370592C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345204B (en) * | 2007-07-13 | 2010-12-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Retaining device and temperature control method for processed body |
| CN103681415A (en) * | 2012-09-21 | 2014-03-26 | 朗姆研究公司 | Method of removing damaged epoxy from electrostatic chuck |
| CN107195578A (en) * | 2017-07-17 | 2017-09-22 | 北京北方华创微电子装备有限公司 | Electrostatic chuck |
| CN107808848A (en) * | 2017-11-28 | 2018-03-16 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and semiconductor equipment |
| CN108695225A (en) * | 2018-05-23 | 2018-10-23 | 上海华力微电子有限公司 | Electrostatic chuck |
| CN110875230A (en) * | 2018-08-29 | 2020-03-10 | 北京华卓精科科技股份有限公司 | Electrostatic chuck protection structure, glue filling device and glue filling process |
| CN110890305A (en) * | 2018-09-10 | 2020-03-17 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
| CN113035683A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135186A (en) * | 1996-10-29 | 1998-05-22 | Sumitomo Metal Ind Ltd | Method of ashing resist |
| JP3979792B2 (en) * | 2000-05-25 | 2007-09-19 | 株式会社巴川製紙所 | Adhesive sheet for electrostatic chuck device and electrostatic chuck device |
| US6506252B2 (en) * | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| JP3829935B2 (en) * | 2002-12-27 | 2006-10-04 | 信越化学工業株式会社 | High voltage resistance member |
| KR101118863B1 (en) * | 2004-01-30 | 2012-03-19 | 도쿄엘렉트론가부시키가이샤 | Substrate holder having a fluid gap and method of fabricating the substrate holder |
-
2005
- 2005-12-08 CN CNB2005101263838A patent/CN100370592C/en active Active
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345204B (en) * | 2007-07-13 | 2010-12-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Retaining device and temperature control method for processed body |
| CN103681415A (en) * | 2012-09-21 | 2014-03-26 | 朗姆研究公司 | Method of removing damaged epoxy from electrostatic chuck |
| WO2019015136A1 (en) * | 2017-07-17 | 2019-01-24 | 北京北方华创微电子装备有限公司 | Electro static chuck and plasma processing equipment |
| CN107195578A (en) * | 2017-07-17 | 2017-09-22 | 北京北方华创微电子装备有限公司 | Electrostatic chuck |
| CN107195578B (en) * | 2017-07-17 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Electrostatic chuck |
| CN107808848A (en) * | 2017-11-28 | 2018-03-16 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and semiconductor equipment |
| CN108695225A (en) * | 2018-05-23 | 2018-10-23 | 上海华力微电子有限公司 | Electrostatic chuck |
| CN110875230A (en) * | 2018-08-29 | 2020-03-10 | 北京华卓精科科技股份有限公司 | Electrostatic chuck protection structure, glue filling device and glue filling process |
| CN110875230B (en) * | 2018-08-29 | 2022-06-14 | 北京华卓精科科技股份有限公司 | Electrostatic chuck protection structure, glue filling device and glue filling process |
| CN110890305A (en) * | 2018-09-10 | 2020-03-17 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
| CN110890305B (en) * | 2018-09-10 | 2022-06-14 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
| CN113035683A (en) * | 2019-12-25 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
| CN113035683B (en) * | 2019-12-25 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly and plasma processor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100370592C (en) | 2008-02-20 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |