CN1848204A - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents
Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus Download PDFInfo
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- CN1848204A CN1848204A CN 200610072697 CN200610072697A CN1848204A CN 1848204 A CN1848204 A CN 1848204A CN 200610072697 CN200610072697 CN 200610072697 CN 200610072697 A CN200610072697 A CN 200610072697A CN 1848204 A CN1848204 A CN 1848204A
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Abstract
The invention discloses a lamination structure and manufacturing technology in the LCD electrooptical device, which is characterized by the following: the electrooptical device possesses data line, scanning line and film transistor under data line layer on the base, which also comprises region corresponding to film transistor groove on the data line layer, pixel potential electrode, dielectric film, memory capacitance laminated from lower layer of dielectric film and fixed potential electrode and pixel electrode, wherein the pixel electrode is allocated on the capacitance in each pixel region, which connects pixel potential electrode and film transistor electrically; at least one part of fixed potential electrode and pixel electrode contains first conductive mask film.
Description
Technical field
The present invention relates to for example technical field of the electronic equipment of electro-optical device, its manufacture method and for example liquid crystal projector etc. of liquid-crystal apparatus etc.
Background technology
This electro-optical device, on substrate, possess pixel electrode, be used to carry out sweep trace that the selectivity of this pixel electrode drives, data line and as TFT (the Thin FilmTransistor of pixel switch with element, thin film transistor (TFT)), and its be constituted as and can carry out driven with active matrix.In addition, be purpose with high-contrastization etc., also between TFT and pixel electrode, memory capacitance be set sometimes.Above inscape is produced on the substrate to high-density, realizes the raising of pixel aperture ratio, (for example, the referring to Patent Document 1) such as miniaturizations of device.
As mentioned above, for electro-optical device, high-qualityization, the miniaturization height that requires further to show becomes more meticulous etc., also will take various countermeasures except that above-mentioned.For example,, display quality is reduced owing to the light leakage current can take place when light during to the semiconductor layer incident of TFT, thus will be at this semiconductor layer light shield layer is set on every side.In addition, though it is big as far as possible to it is desirable to the electric capacity of memory capacitance,, its opposing face it is desirable to design in the mode of not sacrificing pixel aperture ratio.Have again, it is desirable to this multiple circuit key element and should make equipment miniaturization, and on substrate, make to high-density.
On the other hand, people also study the shape of electronic components such as the memory capacitance in this electro-optical device, manufacture method etc., propose to be useful on the various technology (for example, referring to Patent Document 2 and 3) that improve device performance, fabrication yield.
[patent documentation 1] spy opens the 2002-156652 communique
[patent documentation 2] spy opens flat 6-3703 communique
[patent documentation 3] spy opens flat 7-49508 communique
But, if adopt above-mentioned various technology in the past, then being accompanied by multifunction or high performance, the rhythmo structure on the substrate is high complexityization basically.This further can cause the high complexityization of manufacture method, the reduction of fabrication yield etc.Otherwise, if make simplifications such as rhythmo structure on the substrate, manufacturing process, the deterioration etc. that then existing may be because of the reduction of shading performance, particularly be positioned at the picture signal that stray capacitance caused of pixel electrode and lower layer side thereof is caused the technical matters of the reduction of display quality.
Summary of the invention
The present invention finishes for addressing the above problem just, purpose is to provide the simplification that is suitable for realizing rhythmo structure, manufacturing process etc., and electro-optical device and the manufacture method thereof that can carry out high-quality demonstration, and the electronic equipment that possesses such electro-optical device.
In order to address the above problem, electro-optical device of the present invention possesses on substrate: data line that extends and sweep trace intersected with each otherly; On aforesaid substrate, be configured in the thin film transistor (TFT) of above-mentioned data line lower layer side; On aforesaid substrate plane earth see be configured in the zone that comprises the zone relative with the channel region of above-mentioned thin film transistor (TFT) and be configured in above-mentioned data line upper layer side, begin lamination pixel current potential lateral electrode, dielectric film and set potential lateral electrode successively and the memory capacitance that constitutes from lower layer side; And plane earth is seen and is configured in each pixel of stipulating accordingly with above-mentioned data line and sweep trace and is configured in than above-mentioned memory capacitance pixel electrode more upper layer side, that be electrically connected with above-mentioned pixel current potential lateral electrode and above-mentioned thin film transistor (TFT) on aforesaid substrate; Wherein, at least one side in said fixing current potential lateral electrode and the above-mentioned pixel current potential lateral electrode comprises the 1st conductive light shielding film.
If adopt electro-optical device of the present invention, then when it moves, thin film transistor (TFT) can carry out driven with active matrix by from data line the pixel electrode of the location of pixels that is scanned line options being applied data-signal.At this moment, can utilize memory capacitance to improve the current potential retention performance of pixel electrode, it is possible that the high-contrast of demonstration is changed into.
In the present invention, particularly be configured in the data line upper layer side and be configured in the memory capacitance in the zone that comprises the zone relative with channel region, at least one side in set potential lateral electrode and pixel current potential lateral electrode is contained the 1st conductive light shielding film.For this reason, can utilize can interlayer dielectric between middle and the memory capacitance of data line, positively for the channel region of thin film transistor (TFT) being carried out shading from the incident light of upper layer side in abutting connection with configuration.These result when moving as mentioned above, makes the light leakage current of thin film transistor (TFT) to reduce, and contrast can improve, and shows thereby can carry out high quality images.
On the other hand, in the memory capacitance upper layer side, in each pixel, all dispose pixel electrode.Here owing under pixel electrode, have the set potential lateral electrode of memory capacitance between the centre with interlayer dielectric, so pixel electrode under the current potential of conducting film become and be set potential.Here, so-called " set potential ", mean at least at every turn fixedly specified time limit and with the irrelevant current potential of the content of view data.For example, also can be as earthing potential, be to be completely fixed set potential into the regulation current potential with respect to time shaft.Perhaps, also can be as common electrode current potential or comparative electrode current potential, be for example during the odd-numbered frame of picture signal, to be fixed as the 1st set potential, and during even field, be fixed as the mode of the 2nd set potential, the set potential of fixing each specified time limit with respect to time shaft with stipulating current potential.For this reason, even if plane earth is seen on substrate, memory capacitance and adjacent pixel electrodes dispose in a part overlappingly in abutting connection with ground or at least, also can prevent to produce electrical interference in adjacent pixel electrodes and pixel current potential lateral electrode place, in other words, produce electric coupling.In other words, even if adjacent pixel electrodes is different with the current potential separately of pixel current potential lateral electrode, owing to exist the set potential lateral electrode between adjacent pixel electrodes and pixel current potential lateral electrode, the film that also can cut off each other rings.Thus, can prevent between adjacent pixel electrodes and pixel current potential lateral electrode, promptly to produce electrical interference between adjacent pixel electrodes.Therefore can improve contrast, show thereby can carry out high quality images.
In addition, the benefit relevant with electrical interference with such light-proofness, can by on substrate according to the order of thin film transistor (TFT), data line, memory capacitance and pixel electrode, their laminations fairly simple like this basic structure of getting up is obtained between the centre with interlayer dielectric.
Above result can realize the simplification of the rhythmo structure on the substrate, and because of the existence of memory capacitance, can also reduce the harmful effect that electrical interference produced of light leakage current and pixel electrode, shows thereby can carry out high quality images.In addition, the simplification of the rhythmo structure on the substrate also links together with the simplification of manufacturing process, the raising of yield rate.
In a kind of mode of electro-optical device of the present invention, above-mentioned thin film transistor (TFT) sees that with plane earth on aforesaid substrate corresponding and above-mentioned channel region with intersecting of above-mentioned data line and sweep trace is disposed by the mode that above-mentioned data line covers at least in part; And above-mentioned data line comprises the 2nd conductive light shielding film.
If adopt this mode, then the channel region of the thin film transistor (TFT) data line that is configured in upper layer side at least in part covers, and data line comprises the 2nd conductive light shielding film.Thus, can by can with the data line of channel region in abutting connection with configuration, more positively for the channel region of thin film transistor (TFT) being carried out shading from the incident light of upper layer side.Consequently, when carrying out aforesaid action, can reduce the light leakage current of thin film transistor (TFT), improve contrast, show thereby can carry out high quality images.
In the another way of electro-optical device of the present invention, above-mentioned sweep trace, see at plane earth on the aforesaid substrate and to be configured in the zone that comprises the zone relative and on aforesaid substrate, to be configured in the lower layer side of above-mentioned thin film transistor (TFT) with above-mentioned channel region, and it is connected to the grid of above-mentioned thin film transistor (TFT) by contact hole, and comprises the 3rd conductive light shielding film.
If adopt this mode, then,, include the 3rd conductive light shielding film with the sweep trace that the mode that comprises the zone relative with channel region disposes at the lower layer side of thin film transistor (TFT).Thus, even if, also can utilize sweep trace channel region to be carried out shading from lower layer side for the back light of the backside reflection of substrate, the light that passes combining optical that in multi-plate projector etc., sends etc. from other electro-optical devices.Consequently can be for from the incident light of upper layer side with from this two side of back light of lower layer side, positively the channel region to thin film transistor (TFT) carries out shading.
In addition, sweep trace is connected to the grid of thin film transistor (TFT) by contact hole.Here, so-called " contact hole " refers in order to make in the conducting and connect the hole of interlayer dielectric on thickness direction each other of the conductive layer that forms up and down of interlayer dielectric, for example, the conductive layer that comprises upside is the result that is removed of portion within it, situation about being connected with the conductive layer of downside (promptly, the situation of so-called contact hole) or with conductive material be filled into inside, the one end is contacted with the conductive layer of upside, the situation (that is, forming the situation of grafting) that the other end is contacted with the conductive layer of downside.
In the another way of electro-optical device of the present invention, on aforesaid substrate, at least one position lamination has the interlayer dielectric of having implemented planarization among the interlayer of above-mentioned sweep trace, above-mentioned thin film transistor (TFT), above-mentioned data line, above-mentioned memory capacitance and pixel electrodes.
If adopt this mode, then on substrate, sweep trace, thin film transistor (TFT), data line, memory capacitance and pixel electrode carry out lamination with interlayer dielectric between the centre.The surface of the interlayer dielectric after lamination can produce concavo-convex that these key elements because of lower layer side cause.So,, then can make the flattening surface of interlayer dielectric if by for example chemical milled processed (CMP) or milled processed, spin-coat process, remove the concavo-convex of formation in this wise to the planarization such as landfill disposal of depression.For example, at substrate with it between the right counter substrate of order under the situation of electro-optical substance such as holding liquid crystal with such rhythmo structure, because substrate surface is smooth, produce disorderly possibility on the state of orientation that can be reduced in electro-optical substance of dying, thereby can carry out more high-quality demonstration.In addition, such planarization, though say ideally and can carry out to the surface of all interlayer dielectrics, but, under the situation that the surface of any one interlayer dielectric is carried out, since with the situation of not carrying out planarization fully relatively, what are more smooth at least for substrate surface, so also can be reduced in the possibility that produces disorder on the state of orientation of electro-optical substance.
In the another way of electro-optical device of the present invention, above-mentioned dielectric film, plane earth is seen the non-open area formation in the gap of the open area that is positioned at above-mentioned each pixel on aforesaid substrate.
If adopt this mode, dielectric film is formed in non-open area, in other words, almost or fully do not form dielectric film in the open area.Thus, even the supposition dielectric film is opaque film, the transmitance of open area is reduced.Thereby,, can utilize the high silicon nitride film of dielectric coefficient and need not consider transmitance for the dielectric film of electric capacity.
For this reason, dielectric film can also conduct be used for preventing that the film of moisture, moisture etc. from playing a role, thereby can also improve water tolerance, moisture-proof.
In the another way of electro-optical device of the present invention, above-mentioned dielectric film is seen in the zone of removing outside the open area of above-mentioned each pixel at plane earth on the aforesaid substrate to form.
If adopt this mode, then form dielectric film in the zone of removing outside the open area of each pixel, then do not form dielectric film in the open area of each pixel.Thus, even the supposition dielectric film is opaque film, the transmitance of open area is reduced.Therefore, for the dielectric film of electric capacity, can utilize the high silicon nitride film of dielectric coefficient and need not consider transmitance.
For this reason, dielectric film can also conduct be used for preventing that the film of moisture, moisture etc. from playing a role, thereby can also improve water tolerance, moisture-proof.
In the another way of electro-optical device of the present invention, the side relative with above-mentioned channel region at above-mentioned data line is formed with the low conducting film of conducting film that luminance factor constitutes the main body of above-mentioned data line.
If adopt this mode, then can prevent face, the catoptrical reflection of the backside reflection of substrate, the light that passes combining optical that produces from other electro-optical devices in multi-plate projector etc. etc. promptly takes place on the face of the lower layer side of data line in a side relative of data line with channel region.Thus, can reduce the influence of light to channel region.Such data line can be at the face of the side relative with channel region of data line, promptly on the face of the lower layer side of data line, for example, forms the metal or the barrier metal of the low material of the Al film etc. of main body of luminance factor composition data line.
In the another way of electro-optical device of the present invention, above-mentioned pixel current potential lateral electrode, at least across above-mentioned dielectric film and said fixing current potential lateral electrode opposed edges, be conical in shape.
If adopt this mode, owing to be conical in shape, near the pixel current potential lateral electrode the edge and the interval of set potential lateral electrode are compared wide with the situation that is not conical in shape.Therefore, can reduce near the edge because of making the bad possibility that is short-circuited, concentrating the possibility that produces defective etc. because of electric field.
In the another way of electro-optical device of the present invention, said fixing current potential lateral electrode, plane earth is seen on aforesaid substrate, the zone in being included in the zone that is formed with above-mentioned pixel current potential lateral electrode forms.
If adopt this mode, because near the edge of pixel current potential lateral electrode, do not forming the set potential lateral electrode across the relative side of dielectric film, so can reduce because of making the bad possibility that is short-circuited, concentrating the possibility produce defective etc. because of electric field.
In the another way of electro-optical device of the present invention, on aforesaid substrate, also possess by forming the relay layer that relaying also is connected the drain electrode of above-mentioned pixel current potential lateral electrode and above-mentioned thin film transistor (TFT) with the conducting film of layer with above-mentioned data line.
If adopt this mode, then the drain electrode of pixel current potential lateral electrode and thin film transistor (TFT) is electrically connected by relay layer, and promptly relaying connects.Pixel current potential lateral electrode and relay layer and relay layer and thin film transistor (TFT), for example the contact hole by perforate on the interlayer dielectric between separately connects.Therefore, can avoid the interfloor distance lengthening between pixel current potential lateral electrode and the drain electrode and the situation that is difficult to couple together between the two with 1 contact hole.Here, particularly because data line and relay layer are by film formed with the conduction of layer, so can not cause the complicated of rhythmo structure and manufacturing process.And, owing to relay layer is made of the 2nd conductive light shielding film identical with data line, so can not reduce the shading performance because of the existence of relay layer.
In the another way of electro-optical device of the present invention, pixel electrodes is a relaying with the extension of above-mentioned pixel current potential lateral electrode, is electrically connected to above-mentioned relay layer.
If adopt this mode, then pixel electrode and relay layer are electrically connected in the extension of pixel current potential lateral electrode being then.In other words, pixel electrode and extension and extension and relay layer, the contact hole that has formed perforate by for example interlayer dielectric between separately connects.Therefore, can avoid the interfloor distance lengthening between pixel electrode and drain electrode and the situation that is difficult to couple together between the two with 1 contact hole.And, can not cause the complicated of rhythmo structure and manufacturing process.In addition,, promptly form the position of the perforate of contact hole, the set potential lateral electrode is not set, can easily construct such connection by see the link position of extension and relay layer at plane earth.
Electronic equipment of the present invention, owing to possess above-mentioned electro-optical device of the present invention, so can realize to show TV, mobile phone, electronic notebook, the word processor of high quality images, find a view type or monitor direct viewing type video recorder, workstation, videophone, POS terminal, touch panel etc., in addition, also have the various electronic equipments such as image processing system that electro-optical device are used as the exposure printer of head, duplicating machine, facsimile recorder etc.In addition, as electronic equipment of the present invention, for example, can also realize electrophoretic apparatus, electron emitting device (field-emitter display and surface-conduction-electron emission display) of electronic paper etc. etc.
In order to address the above problem, the manufacture method of electro-optical device of the present invention, be on substrate, to possess: data line that extends and sweep trace intersected with each otherly, be configured in above-mentioned data line lower layer side top gate type thin film transistor, be configured in the memory capacitance of above-mentioned data line upper layer side and be configured in than the above-mentioned memory capacitance manufacture method of the electro-optical device of the pixel electrode of upper layer side more, comprising: the plane earth on aforesaid substrate sees that the zone corresponding with intersecting of above-mentioned data line and sweep trace forms the operation of above-mentioned thin film transistor (TFT); Form the operation of above-mentioned data line in above-mentioned thin film transistor (TFT) upper layer side; On aforesaid substrate plane earth see the zone that comprises the zone relative with the channel region of above-mentioned thin film transistor (TFT), in above-mentioned data line upper layer side, the mode that constitutes with pixel current potential lateral electrode, dielectric film and set potential lateral electrode lamination successively and comprise that with at least one side of above-mentioned set potential lateral electrode and above-mentioned pixel current potential lateral electrode the mode of the 1st conductive light shielding film forms the operation of above-mentioned memory capacitance; And on above-mentioned memory capacitance, plane earth is seen in each pixel of stipulating accordingly with above-mentioned data line and sweep trace on aforesaid substrate, forms the operation of pixel electrodes in the mode that is electrically connected to above-mentioned thin film transistor (TFT) and above-mentioned pixel current potential lateral electrode.
If adopt the manufacture method of electro-optical device of the present invention, then can make above-mentioned electro-optical device of the present invention.Here, particularly because the rhythmo structure on the substrate is fairly simple, thus can realize the simplification of manufacturing process, and the raising of yield rate also is possible.
In a kind of mode of the manufacture method of electro-optical device of the present invention, form the operation of above-mentioned memory capacitance, be included in above-mentioned pixel current potential lateral electrode, across above-mentioned dielectric film at least with said fixing current potential lateral electrode opposed edges, utilize wet etching, plasma etching and the oxygen at least a operation that tapering is set in cleaning.
If adopt this mode, then can utilize at least a among cleaning of wet etching, plasma etching and oxygen, the tapering of the plain current potential lateral electrode of fairly simple terrain imaging.By forming tapering in this wise, after manufacturing process etc. in, can be reduced in and produce defective near the edge of pixel current potential lateral electrode, concentrate the possibility that produces defective because of electric field.In addition, remove outside the operation that tapering is set, can also be included in plane earth on the substrate and see that the zone littler than pixel current potential lateral electrode forms the operation of set potential lateral electrode.
Such effect of the present invention and other advantages can be known from the embodiment that the following describes.
Description of drawings
Fig. 1 is the integrally-built planimetric map that the liquid-crystal apparatus of the 1st embodiment of the present invention is shown;
Fig. 2 is the sectional view that the H-H ' of Fig. 1 locates;
Fig. 3 is the equivalent circuit diagram of various elements, wiring in a plurality of pixels etc.;
Fig. 4 is the planimetric map of the pixel groups on the tft array substrate of the 1st embodiment, and it only illustrates the structure of underclad portion (part of the lower floor among Fig. 7 till the label 6a (data line));
Fig. 5 is the planimetric map of the pixel groups on the tft array substrate of the 1st embodiment, and it only illustrates the structure of top section (part on the upper strata among Fig. 7 on the label 6a (data line));
Fig. 6 is the planimetric map under the situation that Fig. 4 and Fig. 5 is overlapping, and it amplifies a part;
Fig. 7 is the sectional view that the A-A ' under the situation that Fig. 4 and Fig. 5 is overlapping locates;
Fig. 8 is a sectional view identical with Fig. 7 main contents in the variation of the 1st embodiment;
Fig. 9 is the sectional view (its 1) of manufacturing process that the liquid-crystal apparatus of the 1st embodiment is shown in order;
Figure 10 is the sectional view (its 2) of manufacturing process that the liquid-crystal apparatus of the 1st embodiment is shown in order;
Figure 11 is the sectional view (its 3) of manufacturing process that the liquid-crystal apparatus of the 1st embodiment is shown in order;
Figure 12 is the sectional view (its 4) of manufacturing process that the liquid-crystal apparatus of the 1st embodiment is shown in order;
Figure 13 is the sectional view (its 5) of manufacturing process that the liquid-crystal apparatus of the 1st embodiment is shown in order;
Figure 14 is the planimetric map that illustrates as the structure of the projector of an example of the electronic equipment that uses electro-optical device;
Figure 15 is the skeleton view that illustrates as the structure of the personal computer of an example of the electronic equipment that uses electro-optical device; And
Figure 16 is the skeleton view that illustrates as the structure of the mobile phone of an example of the electronic equipment that uses electro-optical device.
Label declaration
1a: semiconductor layer, 1a ': channel region, 3a, 3b: gate electrode, 6a: data line, 9a: pixel electrode, 10:TFT array base palte, 10a: image display area, 11a: sweep trace, 12: underlying insulation film, 12cv: contact hole, 16: alignment films, 20: counter substrate, 21: opposite electrode, 22: alignment films, 23: photomask, 30:TFT, 41,42,43: interlayer dielectric, 50: liquid crystal layer, 70: memory capacitance, 71: lower electrode, 75: dielectric film, 81,83,84,85: contact hole, 300: capacitance electrode, 600: relay layer.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.In the following embodiments, be that example describes with liquid-crystal apparatus as the TFT active array type of drive of the driving circuit internally-arranged type of an example of electro-optical device of the present invention.
＜the 1 embodiment 〉
Liquid-crystal apparatus for the 1st embodiment of the present invention describes with reference to Fig. 1～Fig. 8.
The one-piece construction of＜electro-optical device 〉
At first, see figures.1.and.2, the one-piece construction of the liquid-crystal apparatus of present embodiment is described.Here, Fig. 1 is the planimetric map of structure that the liquid-crystal apparatus of present embodiment is shown, and Fig. 2 is the sectional view at H-H ' the line place of Fig. 1.
In Fig. 1 and Fig. 2, in the liquid-crystal apparatus of present embodiment, dispose tft array substrate 10 and counter substrate 20 relatively.Enclosing between tft array substrate 10 and counter substrate 20 has liquid crystal layer 50, and tft array substrate 10 is bonded to each other by the encapsulant 52 that is set in place the sealing area around image display area 10a with counter substrate 20.
In Fig. 1, parallel with the inboard of the sealing area that disposes encapsulant 52, be provided with the frame photomask 53 of light-proofness of the frame region of specified image viewing area 10a in counter substrate 20 sides.Among the neighboring area, the zone in the outside that is positioned at the sealing area that disposes encapsulant 52 is one side be provided with data line drive circuit 101 and external circuit-connecting terminal 102 along tft array substrate 10.In inboard, be provided with sample circuit 7 in the mode that is covered by frame photomask 53 along the sealing area on this limit.In addition, the inboard at the sealing area on 2 limits adjacent along limit therewith is provided with scan line drive circuit 104 in the mode that is covered by frame photomask 53.In addition, on tft array substrate 10, with 4 zones that the bight is relative of counter substrate 20, dispose and be used for conductive material 107 up and down the Lead-through terminal up and down 106 that couples together between two substrates.Thus, can between tft array substrate 10 and counter substrate 20, form and conduct.
On tft array substrate 10, be formed with and be used for external circuit-connecting terminal 102 and data line drive circuit 101, scan line drive circuit 104, drawing of being electrically connected such as Lead-through terminal 106 up and down around wiring 90.
In Fig. 2, on tft array substrate 10, form the rhythmo structure that the wiring of the TFT (Thin Film Transistor, thin film transistor (TFT)) that uses as the pixel switch of driving element or sweep trace, data line etc. is made into.At image display area 10a, the upper strata of the TFT that uses at pixel switch or the wiring of sweep trace, data line etc. is provided with pixel electrode 9a.On the other hand, on counter substrate 20 and opposite face tft array substrate 10, be formed with photomask 23.In addition, on photomask 23, relatively form the opposite electrode 21 that constitutes by transparent materials such as ITO with a plurality of pixel electrode 9a.
In addition, on tft array substrate 10, remove outside data line drive circuit 101, the scan line drive circuit 104, can also form and be used for checking in the manufacture process or the check circuit of the quality of this liquid-crystal apparatus when dispatching from the factory, defective etc., check with pattern etc.
The structure of＜image display area 〉
Below, with reference to Fig. 3～Fig. 8 the structure of the pixel portions of the liquid-crystal apparatus of present embodiment is described.Here, Fig. 3 is the equivalent circuit diagram that constitutes various elements in a plurality of pixels that form of image display area of liquid-crystal apparatus, wiring etc. rectangularly.Fig. 4～Fig. 6 is the planimetric map of the part-structure of the pixel portions on the expression tft array substrate.Fig. 4 and Fig. 5 are equivalent to underclad portion (Fig. 4) and the top section (Fig. 5) among the rhythmo structure described later respectively.Fig. 6 is the planimetric map behind the amplification rhythmo structure, and its mode with overlay chart 4 and Fig. 5 constitutes.Fig. 7 is the sectional view that the A-A ' under the situation after overlapping locates with Fig. 4 and Fig. 5.Fig. 8 is the sectional view identical with Fig. 7 main contents of variation.In addition, in Fig. 7 and Fig. 8, for each parts of each layer being formed the size of discernible degree on drawing, each of each parts of each layer for this makes reduced scale inequality.
The principle structure of＜pixel portions 〉
In Fig. 3, in a plurality of pixels that form in the pixel display area territory of the liquid-crystal apparatus that constitutes present embodiment rectangularly, be formed with pixel electrode 9a respectively and this pixel electrode 9a carried out the TFT 30 that switch is controlled, and the data line 6a of supply picture signal is electrically connected to the source electrode of this TFT 30 with being used for.Be written to data line 6a picture signal S1, S2 ..., Sn, both can supply with on line ground one by one according to this order, also can with for many adjacent data line 6a to each other the mode of every group of ground supply form.
In addition, sweep trace 11a is electrically connected to the grid of TFT 30, and with predetermined timing with sweep signal G1, G2 ..., Gm is applied to sweep trace 11a by pulse in line ground one by one according to this order.Pixel electrode 9a is electrically connected to the drain electrode of TFT 30, and by making its switch of conducting specified time limit only as the TFT 30 of on-off element, and make the picture element signal S1, the S2 that supply with from data line 6a ..., Sn writes with predetermined timing.
By pixel electrode 9a be written to picture element signal S1, S2 as the specified level in the liquid crystal of an example of electro-optical substance ..., Sn, between the opposite electrode that forms on the counter substrate, keep specified time limit.The orientation of liquid crystal by its elements collection, order etc. change according to the voltage level that is applied, and can light be modulated, and show thereby carry out gray shade scale.If normal white mode, then the transmitance for incident light reduces according to the voltage that applies in the unit of each pixel, if often black pattern, then increase according to the voltage that in the unit of each pixel, applies for the transmitance of incident light, thereby from the liquid-crystal apparatus light of outgoing with contrast corresponding with picture signal as a whole.
Here, the picture signal that keeps in order to prevent is leaked, and the liquid crystal capacitance that forms between pixel electrode 9a and opposite electrode extra storage electric capacity 70 side by side.The drain electrode that one side's electrode of memory capacitance 70 and pixel electrode 9a are connected to TFT 30 side by side, the opposing party's electrode then are connected to the fixing capacitance wiring 400 of current potential in the mode that becomes set potential.
The concrete structure of＜pixel portions 〉
Below, with reference to Fig. 4～Fig. 8 the concrete structure of the pixel portions that realizes above-mentioned action is described.
In Fig. 4～Fig. 8, each circuit key element of above-mentioned pixel portions, as be patterned, the conducting film of lamination constructed on tft array substrate 10.Tft array substrate 10 for example is made of glass substrate, quartz base plate, SOI substrate, semiconductor substrate etc., and with the counter substrate 20 relative configurations that for example constitute by glass substrate, quartz base plate etc.In addition, each circuit key element, by under begin in turn, by comprising the 1st layer of sweep trace 11a, comprise the 2nd layer of TFT 30 etc., comprise the 3rd layer of data line 6a etc., comprise the 4th layer of memory capacitance 70 etc., comprising that the 5th layer of pixel electrode 9a etc. constitutes.In addition, be provided with underlying insulation film 12 at the 1st layer of the-the 2nd interlayer respectively, be provided with the 1st interlayer dielectric 41 at the 2nd layer of the-the 3rd interlayer, be provided with the 2nd interlayer dielectric 42 at the 3rd layer of the-the 4th interlayer, be provided with the 3rd interlayer dielectric 43 at the 4th layer of the-the 5th interlayer, prevent the short circuit between above-mentioned each key element.In addition, wherein, the 1st layer～the 3rd layer shown in Figure 4 as underclad portion, and the 4th layer～the 5th layer shown in Figure 5 as top section.
(structure-sweep trace of the 1st layer etc.-)
The 1st layer, 11a constitutes by sweep trace.Sweep trace 11a is formed the shape that the upwardly extending teat in Y side of the Fig. 4 that is extended by the main line part that extends along the directions X of Fig. 4 with at data line 6a constitutes by pattern.Such sweep trace 11a, an example as " the 3rd conductive light shielding film " of the present invention, for example, constitute by the electric conductivity polysilicon, in addition, also can utilize at least a metal monomer, alloy, metal silicide, multi-crystal silicification thing or their laminated body that contain among titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), the molybdenum refractory metals such as (Mo) to wait forms.
In the present embodiment, sweep trace 11a particularly disposes in the mode that comprises the zone relative with channel region 1a at the lower layer side of TFT 30, and is made of conducting film.Therefore, even if in the backside reflection of tft array substrate 10 or liquid-crystal apparatus is being constructed under the situation of multi-plate projector as light valve, back light for light that passes combining opticals such as prism that sends from other liquid-crystal apparatus etc. also can utilize sweep trace 11a from lower layer side channel region 1a ' to be carried out shading.
(structure-TFT of the 2nd layer etc.-)
The 2nd layer is made of TFT 30.TFT 30 is formed for example LDD (lightly doped drain) structure, possesses gate electrode 3a is arranged, semiconductor layer 1a, comprises the dielectric film 2 of the gate insulating film that makes gate electrode 3a and semiconductor layer 1a insulation.Gate electrode 3a is for example formed by the electric conductivity polysilicon.Semiconductor layer 1a for example is made of polysilicon, and it is by channel region 1a ', low concentration source region 1b and low concentration drain region 1c and high concentration source region 1d and high concentration drain region 1e formation.In addition, TFT 30, though it is desirable to have the LDD structure,, also can be the collocation structure that low concentration source region 1b and low concentration drain region 1c is not mixed, can also be gate electrode 3a is mixed as mask high concentration ground and to form the ego integrity type in high concentration source region and high concentration drain region.
The gate electrode 3a of TFT 30 in its a part of 3b, is electrically connected to sweep trace 11a by the contact hole 12cv that forms on underlying insulation film 12.Underlying insulation film 12, for example constitute by silicon oxide layer etc., and it is removed outside the layer insulation function of layers 1 and 2, owing on whole of tft array substrate 10, form, so also have the function of variation of the element characteristic of caused TFT 30 such as the coarse injustice that prevents the grinding because of substrate surface and produce, pollutant.
In addition, though the TFT 30 of present embodiment is a top gate type,, also can be bottom gate type.
(structure-data line of the 3rd layer etc.-)
The 3rd layer is made of data line 6a and relay layer 600.
As modified embodiment of the present embodiment, also can form the low conducting films of conducting film such as Al film of the main body of luminance factor composition data line 6a in the side relative of data line 6a with channel region 1a '.If the employing variation, then above-mentioned back light is by the face of the side relative with channel region 1a ' of data line 6a, and promptly the face of the lower layer side of data line 6a reflects, and therefore can prevent optical multiple reflector or parasitic light etc.Therefore, can reduce the influence of light to channel region 1a '.Such data line 6a can be at data line 6a and face channel region 1a ' opposite side, promptly on the face of the lower layer side of data line 6a, forms the metal or the barrier metal of the lower material of the Al film etc. of main body of luminance factor composition data line 6a.In addition, metal or barrier metal as lower material such as luminance factor Al film can use chromium (Cr), titanium (Ti), titanium nitride (TiN) and tungsten (W) etc.
The 1st interlayer dielectric 41 is for example formed by NSG (nothing is mixed the impurity silicate glass).In addition, for the 1st interlayer dielectric 41, also can use PSG (phosphosilicate glass), BSG (borosilicate glass), BPSG silicate glasses such as (boron phosphorus silicate glass), silicon nitride, monox etc.
(structure-memory capacitance of the 4th layer etc.-)
The 4th layer is made of memory capacitance 70.Memory capacitance 70 constitute make capacitance electrode 300 and lower electrode 71 with dielectric film 75 between the middle and structure of relative configuration.Here, capacitance electrode 300 is examples of " set potential lateral electrode " of the present invention, and lower electrode 71 is examples of " pixel current potential lateral electrode " of the present invention.The extension of lower electrode 71 is electrically connected with relay layer 600 by the contact hole 84 that connects the 2nd interlayer dielectric 42.
In addition, as Fig. 5 and shown in Figure 7, capacitance electrode 300, plane earth is seen on tft array substrate 10, is forming (in Fig. 7, reference circle C1 and C2) than lower electrode 71 littler zones.In other words, owing near the edge of lower electrode 71, do not form capacitance electrode 300, so can reduce because of near the bad possibility that is short-circuited of the manufacturing the edge, because of the concentrated possibility that produces defective of electric field etc. across dielectric film 75 relative sides.
As variation, as shown in Figure 8, lower electrode 71 across dielectric film 75 and capacitance electrode 300 opposed edges, tapering (in Fig. 8, reference circle C2) also can be set.If adopt in such a way, near the lower electrode 71 the edge is wideer than the situation that tapering is not set with the interval of capacitance electrode 300.Thereby, even at capacitance electrode 300, plane earth is seen on tft array substrate 10, is formed under the situation in the outstanding zone of lower electrode 71, also can reduce and concentrate the possibility that produces defective etc. because of near the bad possibility that is short-circuited of the manufacturing the edge, because of electric field.
The 2nd interlayer dielectric 42 is for example formed by NSG.In addition, for the 2nd interlayer dielectric 42, also can use silicate glasses such as PSG, BSG, BPSG, silicon nitride, monox etc.The surface of the 2nd interlayer dielectric 42, carried out the chemical milled processed (ChemicalMechanical Polishing, CMP) or milled processed, spin-coat process, to the planarization such as landfill disposal of depression.Thus, because of concavo-convex being removed that these key elements of lower layer side produce, the surface of the 2nd interlayer dielectric 42 is flattened.Therefore, can reduce the possibility that the state of orientation that is held in the liquid crystal layer 50 between tft array substrate 10 and the counter substrate 20 gets muddled, thereby can carry out more high-quality demonstration.In addition, such planarization also can be carried out the surface of other interlayer dielectrics.
(structure-pixel electrode of the 5th layer etc.-)
On the 4th layer whole, be formed with the 3rd interlayer dielectric 43,, be formed with pixel electrode 9a more thereon as the 5th layer.The 3rd interlayer dielectric 43 is for example formed by NSG.In addition, for the 3rd interlayer dielectric 43, also can use silicate glasses such as PSG, BSG, BPSG, silicon nitride, monox etc.The surface of the 3rd interlayer dielectric 43, same with the 2nd interlayer dielectric 42, carried out planarization such as CMP.
In addition, as mentioned above, the high concentration drain region 1e of the extension of lower electrode 71 and relay layer 600 and relay layer 600 and TFT 30 is electrically connected by contact hole 84 and 83 respectively.That is to say that the high concentration drain region 1e of pixel electrode 9a and TFT 30 is a relaying with the extension of relay layer 600 and capacitance electrode 300, connects and carry out relaying.Therefore, can avoid being difficult to the situation that will couple together between the two with 1 contact hole because of the interfloor distance lengthening between pixel electrode and drain electrode.And, can not cause the complicated of rhythmo structure and manufacturing process yet.
At the upside of pixel electrode 9a, be provided with the alignment films 16 of the orientation process of having implemented regulations such as milled processed.
It more than is exactly the structure of the pixel portions of tft array substrate 10 sides.
On the other hand, on counter substrate 20, the whole face of its opposite face is provided with opposite electrode 21, and (being the downside of opposite electrode 21 in Fig. 7) is provided with alignment films 22 more thereon.Opposite electrode 21,9a is same with pixel electrode, for example is made of transparent and electrically conductive films such as ITO films.In addition, between counter substrate 20 and opposite electrode 21, for the generation of the light leakage current that prevents TFT 30 etc., with cover at least with TFT 30 over against the mode in zone be provided with photomask 23.
Between the tft array substrate 10 and counter substrate 20 that constitute like this, be provided with liquid crystal layer 50.Liquid crystal layer 50 is to form by liquid crystal being sealing in the space that the peripheral part that utilizes encapsulant closed substrate 10 and 20 forms.Liquid crystal layer 50, to apply under the state of electric field between not to pixel electrode 9a and opposite electrode 21, utilization has been implemented the mode of the alignment films 16 of orientation process such as milled processed and the state of orientation that alignment films 22 forms regulation and has been constituted.
The structure of pixel portions discussed above as shown in Figure 4 and Figure 5, all is identical for each pixel portions.In above-mentioned image display area 10a (with reference to Fig. 1), be formed with such pixel portions periodically.On the other hand, in such liquid-crystal apparatus, be positioned at image display area 10a around the neighboring area, as see figures.1.and.2 illustrated, be formed with driving circuits such as scan line drive circuit 104 and data line drive circuit 101.
＜manufacture method 〉
Below, the manufacture method for such electro-optical device describes with reference to Fig. 9～Figure 13.Fig. 9～Figure 13 uses the section corresponding with Fig. 7 that the process chart of the rhythmo structure of the electro-optical device in each operation of manufacturing process is shown in order.In addition, here, within the liquid-crystal apparatus of present embodiment, mainly the formation operation as sweep trace, TFT, data line, memory capacitance and the pixel electrode of major part is described.
At first, as shown in Figure 9, form on the tft array substrate 10, each layer structure of lamination till sweep trace 11a to the 1 interlayer dielectric 41.At this moment, TFT 30 with sweep trace 11a and the corresponding zone that intersects of the data line 6a that forms afterwards form.In addition, in each operation, can use common semiconductor integrated technology.In addition, after the formation of the 1st interlayer dielectric 41, also can utilize the CMP processing to wait and make its flattening surface.
Then, in operation shown in Figure 10, the assigned position on the surface of the 1st interlayer dielectric 41 is implemented etching, form the contact hole 81 of the degree of depth that reaches high concentration source region 1d and reach the perforate of contact hole 83 of the degree of depth of high concentration drain region 1e.Secondly, with the pattern lamination conductive light shielding film of regulation, form data line 6a and relay layer 600.Data line 6a forms in the mode of the channel region 1a that partly covers TFT 30, and by contact hole 81 and high concentration source region 1d consecutive be connected.In addition, as modified embodiment of the present embodiment, also can be before forming data line 6a, in the side relative of data line 6a, form the conducting film that the conducting films such as Al film of the main body of luminance factor composition data line 6a will be low with channel region 1a '.Relay layer 600 is connected with high concentration drain region 1e consecutive ground by contact hole 83.Secondly, on whole of tft array substrate 10, form guide's film 42a of the 2nd interlayer dielectric 42.On the surface of guide's film 42a, can produce concavo-convex that TFT 30, data line 6a because of lower layer side, contact hole 81 and 83 etc. cause.So, by making guide's film 42a, and for example utilize CMP to handle to eliminate till the position of dotted line in figure, make its flattening surface, obtain the 2nd interlayer dielectric 42 than the heavy back film forming.
Then, in operation shown in Figure 11, the assigned position on the surface of the 2nd interlayer dielectric 42 is implemented etching, form the perforate of the contact hole 84 of the degree of depth that reaches relay layer 600.Secondly, with the pattern lamination conductive light shielding film of regulation, form lower electrode 71.Lower electrode 71 forms in the mode in the zone relative with channel region 1a ' that comprise TFT 30, and its by contact hole 84 and relay layer 600 consecutives be connected.In addition, also can use wet etching to form tapering at the edge (in Figure 11, reference circle C2) of the regulation of lower electrode 71.By landform tapering like this, after manufacturing process in, can be reduced in and produce defective near the edge of lower electrode 71, concentrate the possibility that produces defective because of electric field.In addition, in the formation of tapering, remove outside the wet etching or the replacement wet etching, also can use plasma etching, oxygen cleaning etc., and can form fairly simplely.
Then, in operation shown in Figure 12, the non-open area on tft array substrate 10 forms dielectric film 75.Secondly, conductive light shielding film is laminated to the regulation zone that comprises the zone relative with channel region 1a ', forms capacitance electrode 300.At this moment, capacitance electrode 300, plane earth is seen on tft array substrate 10, is forming (in Figure 11, reference circle C1 and C2) than lower electrode 71 little zones.Thus, can after manufacturing process etc. in be reduced in and produce defective near the edge of lower electrode 71, concentrate the possibility that produces defective because of electric field.Secondly, on whole of tft array substrate 10, form guide's film 43a of the 3rd interlayer dielectric 43.Can produce on the surface of guide's film 43a because of memory capacitance 70, contact hole 84 cause concavo-convex.So, by making guide's film 43a, and for example utilize that the CMP milled processed eliminates till the position of the dotted line in figure than the heavy back film forming, make its flattening surface, obtain the 3rd interlayer dielectric 43.
Then, in operation shown in Figure 13, the assigned position on the surface of the 3rd interlayer dielectric 43 is implemented etching, form the perforate of contact hole 85 of the degree of depth of the extension that reaches lower electrode 71.Secondly, the assigned position on the surface of the 3rd interlayer dielectric 43 forms the perforate of pixel electrode 9a.At this moment, though pixel electrode 9a also form in that contact hole 85 is inner,, because the aperture of contact hole 85 is big, so spreadability is good.
If adopt the manufacture method of the liquid-crystal apparatus of above explanation, then can make the liquid-crystal apparatus of above-mentioned present embodiment.Particularly because the rhythmo structure on the tft array substrate 10 is fairly simple,, can also improve yield rate here, so manufacturing process also can realize oversimplifying.
＜electronic equipment 〉
Below, the situation that will be applied to various electronic equipments as the liquid-crystal apparatus of above-mentioned electro-optical device is described.
At first, the projector that this liquid-crystal apparatus is used as light valve is described.Figure 14 is the planimetric map that the configuration example of projector is shown.As shown in Figure 14, in projector 1100 inside, be provided with the lamp unit 1102 that constitutes by white light sources such as Halogen lamp LEDs.Projected light from this lamp unit 1102 penetrates is separated into RGB 3 primary colors by 4 catoptrons 1106 and 2 dichronic mirrors 1108 of being configured in the photoconduction 1104, and to liquid crystal panel 1110R, 1110B and 1110G incident as the light valve corresponding with each primary colors.
The structure of liquid crystal panel 1110R, 1110B and 1110G is identical with above-mentioned liquid-crystal apparatus, is to use R, G, the B3 primary signal supplied with from imaging signal processing circuit to drive respectively.Then, by the light after the modulation of these liquid crystal panels, from 3 directions to colour splitting prism 1112 incidents.In this colour splitting prism 1112, R and B light carry out 90 degree refractions, and on the other hand, G light then advances always.Therefore, the result that each color image is synthesized makes coloured image be projected on screen etc. by projecting lens 1114.
Here, if be conceived to the display image that produced by each liquid crystal panel 1110R, 1110B and 1110G, counter-rotating about then the demonstration picture that is produced by liquid crystal panel 1110G need carry out with respect to the display image that is produced by liquid crystal panel 1110R, 1110B.
In addition, in liquid crystal panel 1110R, 1110B and 1110G, owing to all to pass through dichronic mirror 1108 incidents with R, G, light that each primary colors of B is corresponding, so color filter must be set.
Below, the example that liquid-crystal apparatus is applied to the mobile model personal computer is described.Figure 15 is the skeleton view that the structure of this personal computer is shown.In Figure 15, computing machine 1200 constitutes by possessing main part 1204 and liquid crystal display 1206 that keyboard 1202 is arranged.This liquid crystal display 1206 constitutes by the back side that backlight is appended to previous described liquid-crystal apparatus 1005.
In addition, the example that liquid-crystal apparatus is applied to mobile phone is described.Figure 16 is the skeleton view that the structure of this mobile phone is shown.In Figure 16, mobile phone 1300 possesses a plurality of action buttons 1302, and possesses the liquid-crystal apparatus 1005 of reflection-type.On the liquid-crystal apparatus 1005 of this reflection-type, in its front front light-source can be set as required.
In addition, except the illustrated electronic equipment in reference Figure 14～16, can also list LCD TV, find a view type or monitor direct viewing type video recorder, automobile navigation apparatus, pager, electronic notebook, electronic calculator, word processor, workstation, videophone, POS terminal, possess the device of touch panel etc.And apparently, the present invention can be applicable to this various device.
In addition, the present invention, remove beyond the illustrated in the above-described embodiment liquid-crystal apparatus, in element being formed at reflective liquid crystal device (LCOS) on the silicon substrate, Plasmia indicating panel (PDP), field emission display (FED, SED), OLED display etc., also can use.
The present invention is not limited to above-mentioned embodiment, do not deviate from can the accessory rights requirement scope and the scope of all purports of the present invention that obtains of instructions or thought in the change that can suit, the manufacture method that is accompanied by the electro-optical device of such change, the electronic equipment that possesses this electro-optical device and this electro-optical device also all is included in the technical scope of the present invention.
Claims (14)
1. electro-optical device is characterized in that possessing on substrate:
Data line that extends and sweep trace intersected with each otherly;
On aforesaid substrate, be configured in the thin film transistor (TFT) of above-mentioned data line lower layer side;
On aforesaid substrate plane earth see be configured in the zone that comprises the zone relative with the channel region of above-mentioned thin film transistor (TFT) and be configured in above-mentioned data line upper layer side, begin lamination pixel current potential lateral electrode, dielectric film and set potential lateral electrode successively and the memory capacitance that constitutes from lower layer side; And
Plane earth is seen and is configured in each pixel of stipulating accordingly with above-mentioned data line and sweep trace and is configured in than above-mentioned memory capacitance pixel electrode more upper layer side, that be electrically connected with above-mentioned pixel current potential lateral electrode and above-mentioned thin film transistor (TFT) on aforesaid substrate;
Wherein, at least one side in said fixing current potential lateral electrode and the above-mentioned pixel current potential lateral electrode comprises the 1st conductive light shielding film.
2. electro-optical device according to claim 1 is characterized in that:
Above-mentioned thin film transistor (TFT) sees that with plane earth on aforesaid substrate corresponding and above-mentioned channel region with intersecting of above-mentioned data line and sweep trace is disposed by the mode that above-mentioned data line covers at least in part; And
Above-mentioned data line comprises the 2nd conductive light shielding film.
3. electro-optical device according to claim 1 and 2, it is characterized in that: above-mentioned sweep trace, see at plane earth on the aforesaid substrate and to be configured in the zone that comprises the zone relative and on aforesaid substrate, to be configured in the lower layer side of above-mentioned thin film transistor (TFT) with above-mentioned channel region, and it is connected to the grid of above-mentioned thin film transistor (TFT) by contact hole, and comprises the 3rd conductive light shielding film.
4. according to any described electro-optical device in the claim 1～3, it is characterized in that: on aforesaid substrate, at least one position lamination has the interlayer dielectric of having implemented planarization among the interlayer of above-mentioned sweep trace, above-mentioned thin film transistor (TFT), above-mentioned data line, above-mentioned memory capacitance and pixel electrodes.
5. according to any described electro-optical device in the claim 1～4, it is characterized in that: above-mentioned dielectric film, plane earth is seen the non-open area formation in the gap of the open area that is positioned at above-mentioned each pixel on aforesaid substrate.
6. according to any described electro-optical device in the claim 1～4, it is characterized in that: above-mentioned dielectric film, see in the zone of removing outside the open area of above-mentioned each pixel at plane earth on the aforesaid substrate to form.
7. according to any described electro-optical device in the claim 1～6, it is characterized in that: the side relative with above-mentioned channel region at above-mentioned data line is formed with the low conducting film of conducting film that luminance factor constitutes the main body of above-mentioned data line.
8. according to any described electro-optical device in the claim 1～7, it is characterized in that: above-mentioned pixel current potential lateral electrode, at least across above-mentioned dielectric film and said fixing current potential lateral electrode opposed edges, be conical in shape.
9. according to any described electro-optical device in the claim 1～8, it is characterized in that: said fixing current potential lateral electrode, plane earth is seen on aforesaid substrate, the zone in being included in the zone that is formed with above-mentioned pixel current potential lateral electrode forms.
10. according to any described electro-optical device in the claim 1～9, it is characterized in that: on aforesaid substrate, also possess by forming the relay layer that relaying also is connected above-mentioned pixel current potential lateral electrode and above-mentioned thin film transistor (TFT) with the conducting film of layer with above-mentioned data line.
11. electro-optical device according to claim 10 is characterized in that: pixel electrodes is a relaying with the extension of above-mentioned pixel current potential lateral electrode, is electrically connected to above-mentioned relay layer.
12. an electronic equipment is characterized in that: possess any described electro-optical device in the claim 1～11.
13. the manufacture method of an electro-optical device, be on substrate, to possess: data line that extends and sweep trace intersected with each otherly, be configured in above-mentioned data line lower layer side top gate type thin film transistor, be configured in the memory capacitance of above-mentioned data line upper layer side and be configured in than the above-mentioned memory capacitance manufacture method of the electro-optical device of the pixel electrode of upper layer side more, it is characterized in that, comprising:
Plane on aforesaid substrate sees that the zone corresponding with intersecting of above-mentioned data line and sweep trace forms the operation of above-mentioned thin film transistor (TFT);
Form the operation of above-mentioned data line in above-mentioned thin film transistor (TFT) upper layer side;
On aforesaid substrate plane earth see the zone that comprises the zone relative with the channel region of above-mentioned thin film transistor (TFT), in above-mentioned data line upper layer side, the mode that constitutes with pixel current potential lateral electrode, dielectric film and set potential lateral electrode lamination successively and comprise that with at least one side of above-mentioned set potential lateral electrode and above-mentioned pixel current potential lateral electrode the mode of the 1st conductive light shielding film forms the operation of above-mentioned memory capacitance; And
On above-mentioned memory capacitance, plane earth is seen in each pixel of stipulating accordingly with above-mentioned data line and sweep trace on aforesaid substrate, forms the operation of pixel electrodes in the mode that is electrically connected to above-mentioned thin film transistor (TFT) and above-mentioned pixel current potential lateral electrode.
14. the manufacture method of electro-optical device according to claim 13, it is characterized in that: the operation that forms above-mentioned memory capacitance, be included in above-mentioned pixel current potential lateral electrode, across above-mentioned dielectric film at least with said fixing current potential lateral electrode opposed edges, utilize wet etching, plasma etching and the oxygen at least a operation that tapering is set in cleaning.
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| JP2005113145 | 2005-04-11 | ||
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419818C (en) * | 2007-04-23 | 2008-09-17 | 友达光电股份有限公司 | Liquid crystal display device and its driving method |
| CN103034000A (en) * | 2011-09-30 | 2013-04-10 | 株式会社日本显示器东 | Liquid crystal display device |
| CN105589249A (en) * | 2014-11-10 | 2016-05-18 | 株式会社日本显示器 | Reflective type display device |
| CN108257983A (en) * | 2012-06-15 | 2018-07-06 | 索尼公司 | Display device |
-
2006
- 2006-04-11 CN CN 200610072697 patent/CN1848204A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100419818C (en) * | 2007-04-23 | 2008-09-17 | 友达光电股份有限公司 | Liquid crystal display device and its driving method |
| CN103034000A (en) * | 2011-09-30 | 2013-04-10 | 株式会社日本显示器东 | Liquid crystal display device |
| CN103034000B (en) * | 2011-09-30 | 2016-08-03 | 株式会社日本显示器 | Liquid crystal indicator |
| CN108257983A (en) * | 2012-06-15 | 2018-07-06 | 索尼公司 | Display device |
| CN108257983B (en) * | 2012-06-15 | 2022-08-09 | 索尼公司 | Display device |
| CN105589249A (en) * | 2014-11-10 | 2016-05-18 | 株式会社日本显示器 | Reflective type display device |
| CN105589249B (en) * | 2014-11-10 | 2018-10-16 | 株式会社日本显示器 | Reflection display device |
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