CN1841805A - Piezoelectric element, liquid-jet head using piezoelectric element and liquid-jet apparatus - Google Patents
Piezoelectric element, liquid-jet head using piezoelectric element and liquid-jet apparatus Download PDFInfo
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- CN1841805A CN1841805A CN 200610066954 CN200610066954A CN1841805A CN 1841805 A CN1841805 A CN 1841805A CN 200610066954 CN200610066954 CN 200610066954 CN 200610066954 A CN200610066954 A CN 200610066954A CN 1841805 A CN1841805 A CN 1841805A
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Abstract
Disclosed are a piezoelectric element in which crystallinity of a piezoelectric layer is improved, and which has uniform characteristics of the piezoelectric layer, a liquid-jet head using the piezoelectric element as well as a liquid-jet apparatus. The piezoelectric element includes: a lower electrode provided to one surface side of a substrate; a piezoelectric layer which is made of a piezoelectric material containing lead (Pb), zirconium (Zr) and titanium (Ti), and which is provided above the lower electrode; and an upper electrode provided above the piezoelectric layer, and in the piezoelectric element, a relative permittivity of the piezoelectric layer is 750 to 1500 and a coercive electric field of the piezoelectric layer is 10 to 40kV/cm.
Description
Technical field
The present invention relates to comprise the piezoelectric element of the piezoelectric layer that forms by piezoelectric, the jet head liquid that uses this piezoelectric element and liquid injection device.
Background technology
Piezoelectric element is configured piezoelectric layer is placed two modes between the electrode.Described piezoelectric layer is for example made by the piezoelectric with electricity-machine translation function.Perhaps, piezoelectric layer is made of the piezoelectric ceramic of for example crystallization.
There has been the ink jet print head with following structure in jet head liquid as using such piezoelectric element.According to this structure, the part of the pressure generation chamber that is connected with jet hole is made of oscillating plate, and wherein ink droplet sprays from described jet hole.Oscillating plate is out of shape by piezoelectric element, so the ink pressurized in each pressure generation chamber.Therefore, from each jet hole ejection ink droplet.Two types ink jet print head has been dropped into practical.One type of piezo-activator that uses longitudinal vibration mode, wherein piezo-activator is along the extending longitudinally and the contraction of piezoelectric element.Another kind of type is used the piezo-activator of beam mode.
As the ink jet print head of the actuator that uses beam mode, for example the ink jet print head that forms as follows is known.On the whole surface of oscillating plate, form uniform piezoelectric layer by using film to form technology.Then, by photoetching process this piezoelectric layer is cut into and the corresponding shape of pressure generation chamber.Thus, the mode that can be mutually independent with piezoelectric element forms piezoelectric element respectively in pressure generation chamber.
In addition, there has been the piezoelectric layer of being made by lead zirconate titanate (PZT) (for example, referring to Japanese Patent Laid Open Publication communique No.2001-284671) in the piezoelectric layer (piezoelectric film) as the such piezoelectric element of structure.At this, comprise that the various characteristics (for example placement property and durability) of the piezoelectric element of this piezoelectric layer depends on the crystallinity of piezoelectric layer to a great extent.And in Japanese Patent Laid Open Publication communique No.2001-284671, relative dielectric constant, coercive electric field etc. is also regulated and control.But, not talkative in Japanese Patent Laid Open Publication communique No.2001-284671 disclosed piezoelectric element have enough crystallinity.
Notice that such problem is not limited to be installed in the piezoelectric element in the ink jet print head.Need not many speeches, this problem is present in other piezoelectric elements that are installed in the fluid jetting head equally.
Summary of the invention
Consider above-mentioned situation, the purpose of this invention is to provide a kind of wherein piezoelectric layer crystallinity and be enhanced and have the piezoelectric element of homogeneous piezoelectric layer characteristic, the jet head liquid that uses this piezoelectric element and liquid injection device.
The a first aspect of the present invention that is used to solve foregoing problems is a kind of piezoelectric element, and it is characterized in that comprising: bottom electrode, described bottom electrode are set to a face side of substrate; Piezoelectric layer, described piezoelectric layer is made by the piezoelectric that comprises lead (Pb), zirconium (Zr) and titanium (Ti), and is arranged on the described bottom electrode; With the top electrode that is arranged on the described piezoelectric layer.This piezoelectric layer is characterised in that the relative dielectric constant of described piezoelectric layer is 750～1500, and the coercive electric field of described piezoelectric layer is 10～40kV/cm.
In first aspect, the crystallinity of piezoelectric layer is significantly improved.Therefore, can provide and have excellent placement property and have high withstand voltage and the piezoelectric element of longer endurance life.
A second aspect of the present invention is as the described piezoelectric element of first aspect present invention, and the coercive electric field that it is characterized in that described piezoelectric layer is 20～30kV/cm, and the residual polarization intensity of described piezoelectric layer is 10～15 μ C/cm
2
In second aspect, the crystallinity of piezoelectric layer is excellent more, and the placement property of piezoelectric layer and further being improved endurance life.
A third aspect of the present invention is as the described piezoelectric element of first aspect present invention, and the thickness that it is characterized in that described piezoelectric layer is 0.5～5 μ m.
In the third aspect, the crystallinity of piezoelectric layer is significantly improved and defective can not be occurred.
A fourth aspect of the present invention is as the described piezoelectric element of first aspect, it is characterized in that the ratio of components of described piezoelectric layer satisfies the condition of Pb/ (Zr+Ti)=1.05～1.5 and Zr/Ti=53/47～75/25.
In fourth aspect,, can further improve the crystallinity of piezoelectric layer by the ratio of components of piezoelectric layer is adjusted in the preset range.
A fifth aspect of the present invention is as the described piezoelectric element of first aspect, it is characterized in that described piezoelectric is a lead zirconate titanate.
In aspect the 5th, can provide the piezoelectric element of placement property and excellent in te pins of durability.
A sixth aspect of the present invention is a kind of jet head liquid, it is characterized in that comprising: as the described piezoelectric element of first aspect; Form substrate with passage, described piezoelectric element is set to the face side that described passage forms substrate, and the pressure generation chamber that is communicated with jet hole is set to described passage formation substrate.
In aspect the 6th,, can provide jet head liquid with excellent reliability because are enhanced the placement property of piezoelectric element and endurance life.
A seventh aspect of the present invention is a kind of liquid injection device, it is characterized in that comprising as the described jet head liquid in the 6th aspect.
In aspect the 7th, can obtain to have the excellent durability and the liquid injection device of reliability.
Description of drawings
Fig. 1 shows the exploded perspective view according to the schematic configuration of the recording head of first embodiment.
Fig. 2 A and 2B are respectively according to the vertical view of the recording head of first embodiment and cutaway view.
Fig. 3 shows the figure line of example of the lag loop (hysteresis loop) of piezoelectric layer.
Fig. 4 A to Fig. 4 D is the cutaway view that illustrates according to the manufacture method of the recording head of first embodiment.
Fig. 5 A is the cutaway view that illustrates according to the manufacture method of the recording head of first embodiment to Fig. 5 C.
Fig. 6 A is the cutaway view that illustrates according to the manufacture method of the recording head of first embodiment to Fig. 6 D.
Fig. 7 A is the cutaway view that illustrates according to the manufacture method of the recording head of first embodiment to Fig. 7 C.
Fig. 8 illustrates the residual polarization intensity of sample piezoelectric layer and the curve chart of coercive electric field.
Fig. 9 illustrates the displacement of sample piezoelectric element and the curve chart of displacement reduction rate.
Figure 10 shows the view according to the schematic configuration of the tape deck of an embodiment.
Embodiment
To describe the present invention in detail based on embodiment below.
(first embodiment)
Fig. 1 is the exploded perspective view that illustrates according to the schematic configuration of the ink jet print head of first embodiment of the invention.Fig. 2 A is the vertical view of ink jet print head shown in Figure 1, and Fig. 2 B is the cutaway view of the ink jet print head got of the line A-A ' along Fig. 2 A.In the present embodiment, passage forms substrate 10 and is formed by monocrystalline substrate, and in this monocrystalline substrate, crystal is orientated along＜110〉face directions.As shown in the figure, on forming one of two surfaces of substrate 10, passage forms elastic membrane 50.Elastic membrane 50 has the thickness of 0.5 to 2 μ m, and is made by the silicon dioxide that forms by thermal oxidation in advance.Form in the substrate 10 at passage, arrange a plurality of pressure generation chambers 12 that separate by partition wall 11 abreast along the Width of pressure generation chamber 12.Connected component 13 is formed in the zone in vertical outside of pressure generation chamber 12, and pressure generation chamber 12 forms substrate 10 by passage and forms.Connected component 13 is communicated with by each the ink feed path 14 that is respectively pressure generation chamber 12 settings with each pressure generation chamber 12.Along band ground, connected component 13 constitutes the part of fluid reservoir and partly is communicated with the fluid reservoir of the protection substrate that will be described later simultaneously, and described fluid reservoir will be the common ink water cavity that is used for each pressure generation chamber 12.Each ink feed path 14 forms with the narrower width of width that specific pressure produces chamber 12, and makes ink keep constant from the channel resistance that connected component 13 flows to pressure generation chamber 12 thus.
Simultaneously, nozzle plate 20 is by using adhesive, hot glue mucous membrane etc., is fixed to the open surfaces that passage forms substrate 10 under mask film 52 is placed in therebetween situation.Mask film 52 will be described later.In nozzle plate 20, be drilled with jet hole 21.Jet hole 21 is communicated with near the opposite end of pressure generation chamber 12 and ink feed path 14 with pressure generation chamber 12 respectively.Along band ground, nozzle plate 20 is made by for example glass ceramics, monocrystalline substrate, stainless steel etc.
On the other hand, as mentioned above, form at passage on another surface of the opposite side of substrate 10, form elastic membrane 50 with open surfaces.The thickness of elastic membrane 50 is for example made for about 1.0 μ m and by silicon dioxide.Dielectric film 55 is formed on this elastic membrane 50 by it being layered on this elastic membrane 50.Dielectric film 55 thickness are about 0.4 μ m and by zirconia (ZrO
2) wait and make.In addition, piezoelectric element 300 is formed on this dielectric film 55.Each piezoelectric element 300 is made of lower electrode film 60, piezoelectric layer 70 and upper electrode film 80.The thickness of lower electrode film 60 for example is about 0.1～0.2 μ m, and the thickness of piezoelectric layer 70 for example is about 0.5～5 μ m, and the thickness of top electrode 80 for example is about 0.05 μ m.
Generally speaking, piezoelectric element 300 is configured as follows.One in two electrodes of piezoelectric element 300 is used as public electrode.Another electrode and piezoelectric layer 70 are patterned according to each pressure generation chamber 12.In by the part that constitutes that is patterned accordingly in patterned piezoelectric layer 70 and two electrodes, owing to piezoelectric strain is taken place two electrode application voltage.This part is called as " piezoelectric activity part ".In the present embodiment, lower electrode film 60 is used as the public electrode of piezoelectric element 300, and upper electrode film 80 is as the single electrode of piezoelectric element 300.But, also can its purposes be put upside down for the convenience of drive circuit and interconnection.In both cases, in each pressure generation chamber, all form the piezoelectric activity part respectively.
In addition, lead-in wire electrode 90 is connected to each upper electrode film 80 of such piezoelectric element 300.Lead-in wire electrode 90 is made by for example gold (Au) etc.Voltage optionally is applied to each piezoelectric element 300 by lead-in wire electrode 90.
Along band ground, constitute the lower electrode film 60 of piezoelectric element 300 and each in the upper electrode film 80 and make by following metal material, each in the described metal material has higher conductivity.Metal material for example is platinum (Pt), iridium (Ir) etc.In addition, piezoelectric layer 70 is made by the piezoelectric that contains at least plumbous (Pb), zirconium (Zr) and titanium (Ti).For example in this embodiment, piezoelectric layer 70 is made by lead zirconate titanate (PZT).Along band ground, such piezoelectric layer 70 has following characteristic, and promptly its relative dielectric constant is 750～1500, and its coercive electric field is Ec=10～40kV/cm (2Ec=20～80kV/cm).Attention, the coercivity electric field ec of piezoelectric layer 70 for example are the values of utilizing the 2Ec of the lag loop of piezoelectric layer shown in Figure 3 to obtain.
For the piezoelectric layer 70 with such characteristic, it is especially excellent that its piezoelectric constant becomes.Specifically, piezoelectric constant d
31Be 150～250 (pC/N).Therefore, improved the placement property of piezoelectric element 300.Along band ground, has excellent crystallinity because have the piezoelectric layer 70 of such characteristic, so its characteristic such as withstand voltage is significantly improved.Therefore, if the placement property of piezoelectric element 300 is enhanced, then be significantly increased its endurance life simultaneously.In addition, almost do not change homogeneous so the characteristic of spraying ink droplets from each jet hole 21 becomes because constitute between the characteristic of piezoelectric layer 70 of piezoelectric element 300.
In addition, piezoelectric layer 70 preferably has Ec=20～30kV/cm (coercive electric field and the Pr=10～15 μ C/cm of 2Ec=40～60kV/cm)
2(2Pr=20～30 μ C/cm
2) residual polarization intensity.Notice that residual polarization intensity Pr for example is a value of utilizing the lag loop 2Pr of piezoelectric layer shown in Figure 3 to obtain.
In addition, preferably, piezoelectric layer 70 satisfies the condition that its ratio of components is Pb/ (Zr+Ti)=1.0～1.5 and Zr/Ti=53/47～75/25.In addition, piezoelectric layer 70 preferably has perovskite structure.
In this embodiment, piezoelectric layer 70 is formed by lead zirconate titanate (PZT).But the piezoelectric that constitutes piezoelectric layer 70 comprises that plumbous (Pb), zirconium (Zr) and titanium (Ti) are just enough at least.For example, the preferred use by adding the piezoelectric that lead zirconate titanate (PZT) etc. obtains to such as niobium oxide, nickel oxide or magnesian metal oxide.
In addition, baffle 30 is engaged to the top that is formed with such piezoelectric element 300 that passage forms substrate 10.In other words, baffle 30 utilizes adhesive etc. to be engaged to the top of lower electrode film 60, elastic membrane 50 and lead-in wire electrode 90.Baffle 30 is provided with piezoelectric element retaining part 31, and this piezoelectric element retaining part 31 has the cavity even as big as piezoelectric element 300 is moved in the clear.Piezoelectric element retaining part 31 is set to the zone relative with piezoelectric element 300.Notice that piezoelectric element retaining part 31 has even as big as the cavity that piezoelectric element 300 is moved in the clear just enough.Whether cavity seals is unessential.And baffle 30 is provided with fluid reservoir part 32 in the zone relative with connected component 13.As mentioned above, this fluid reservoir part 32 constitutes fluid reservoir 100 when the connected component 13 with passage formation substrate 10 is communicated with.Fluid reservoir 100 serves as the common ink water cavity that is used for pressure generation chamber 12.In addition, through hole 33 is set to the piezoelectric element retaining part 31 of baffle 30 and the zone between the fluid reservoir part 32.Through hole 33 is along thickness direction pierce through the protection plate 30.In through hole 33, expose the part of lower electrode film 60 and the end portion of each lead-in wire electrode 90.Though do not illustrate, be connected to lower electrode film 60 and each lead-in wire electrode 90 from the end of the extended connection distribution of drive IC.
Preferably, have the material that forms substrate 10 same coefficient of thermal expansion with passage and be used to such baffle 30.The example of described material comprises glass, ceramic material etc.In the present embodiment, baffle 30 by as with form the monocrystalline substrate that passage forms substrate 10 same materials and form.
In addition, flexible board (compliance plate) 40 is engaged to the top of baffle 30, and this flexible board 40 is made of diaphragm seal 41 and fixed head 42.At this, diaphragm seal 41 is made by the flexible material with relatively low stiffness (for example, thickness is polyphenylene sulfide (PPS) film of 6 μ m).One end of fluid reservoir part 32 is by 41 sealings of sealing film.In addition, fixed head 42 is by forming such as the hard material of metal (for example, thickness is the stainless steel (SUS) of 30 μ m etc. etc.).The zone relative with fluid reservoir 100 of this fixed head 42 is opening portions 43, and this opening portion 43 obtains by the part of removing fully corresponding to this zone along thickness direction.Therefore, an end of fluid reservoir 100 is only sealed by the diaphragm seal 41 of flexibility.
Such ink jet print head according to present embodiment sucks ink from external ink feeding mechanism (not shown), and will be full of ink in the inside in 21 scopes from fluid reservoir 100 to jet hole.Then, ink jet print head is according to from the tracer signal of drive circuit, applies voltage between corresponding to each upper electrode film 80 of pressure generation chamber 12 and lower electrode film 60.Thus, ink jet print head makes elastic membrane 50, lower electrode film 60 and piezoelectric layer 70 flexural deformations.This distortion is risen the pressure in each pressure generation chamber 12, thus from jet hole 21 ejection ink droplets.
At this, will provide the description of the method for making such ink jet print head to Fig. 7 C with reference to figure 4A.Notice that Fig. 4 A is pressure generation chamber 12 cutaway view longitudinally to Fig. 7 C.At first, shown in Fig. 4 A, form silicon dioxide film 51 as follows.Passage form substrate with wafer 110 in diffusion furnace under about 1100 ℃ by thermal oxidation.Thus, form substrate with forming silicon dioxide film 51 on the surface of wafer 110 at passage, this silicon dioxide film 51 will constitute elastic membrane 50.Note in this embodiment having the big thickness of 625 μ m and the silicon wafer of high rigidity and be used as passage formation substrate wafer 110.
Subsequently, shown in Fig. 4 B, the dielectric film of being made by zirconia 55 is formed on the elastic membrane 50 (silicon dioxide film 51).Particularly, by for example sputtering method etc., zirconium (Zr) layer is formed on the elastic membrane 50 (silicon dioxide film 51).After this, about 500 ℃～1200 ℃ following hot zirconia layers in diffusion furnace for example.Thus, form by zirconia (ZrO
2) insulating barrier 55 made.Then, on dielectric film 55, form the lower electrode film 60 that forms by for example platinum (Pt), iridium (Ir) etc.After this, shown in Fig. 4 C, lower electrode film 60 is patterned into reservation shape.
Subsequently, shown in Fig. 4 D,, on lower electrode film 60 and dielectric film 55, form crystal seed titanium layer 65 with predetermined thickness by for example using coated titanium (Ti) such as sputtering method.Subsequently, piezoelectric layer 70 is formed on the crystal seed titanium layer 65.In this embodiment, piezoelectric layer 70 is made by lead zirconate titanate.At this, utilize the method that is called as sol-gal process to form piezoelectric layer 70 in the present embodiment.According to sol-gal process,, metallorganic matter obtains so-called colloidal sol in the catalyst by being dissolved and be dispersed in.This colloidal sol is coated and dry, to be transformed into gel.This gel of sintering under higher temperature then.Obtain the piezoelectric layer 70 made by metal oxide thus.In addition, the method for manufacturing piezoelectric layer 70 is not limited to sol-gal process.For example, can use MOD (deposition of metal organic) method etc.
The example process that is used to form piezoelectric layer 70 is as follows.Shown in Fig. 5 A, be formed on the crystal seed titanium layer 65 as the piezoelectricity precursor film 71 of PZT presoma.In other words, comprise metal-organic colloidal sol (liquid solution) and be applied to the top of passage formation substrate with wafer 110.Subsequently, this piezoelectricity precursor film 71 of heating under predetermined temperature, and so dry regular hour.Solvent by evaporation colloidal sol comes dry piezoelectricity precursor film 71.In addition, under predetermined temperature, in atmosphere to the 71 degreasing regular hours of piezoelectricity precursor film.Along band ground, be meant that in this alleged degreasing the organic component of the film that will be made by colloidal sol is for example as NO
2, CO
2, H
2O etc. remove from it.
Subsequently, coating, drying, defatting step are repeated pre-determined number, for example twice.Therefore, shown in Fig. 5 B, form piezoelectric film 72 as follows.Form a plurality of piezoelectricity precursor film 71 that each all has predetermined thickness.Subsequently, piezoelectricity precursor film 71 in diffusion furnace through Overheating Treatment, to carry out crystallization.Then, form piezoelectric film 72.In other words, piezoelectricity precursor film 71 is sintered so that its crystal with crystal seed titanium layer 65 as seeded growth, form piezoelectric film 72 thus.At this, sintering temperature is preferably 650～850 ℃.For example, piezoelectricity precursor film 71 700 ℃ of following sintering half an hour to form piezoelectric film 72.Notice that the crystal of the piezoelectric film 72 of Xing Chenging has＜100〉face preferred orientation like this.
In addition, coating, drying, degreasing and sintering step are repeated to carry out repeatedly, have certain thickness piezoelectric layer 70 with formation.Piezoelectric layer 70 is for example formed by 5 lamination electrolemmas 72, shown in Fig. 5 C.Notice, forming in the situation of piezoelectric layer 70 that preferably total sintering (heating) time is no more than half an hour to 3 hour by carrying out repeatedly sintering.
Therefore, by forming piezoelectric layer 70 in this way, can stably form the piezoelectric layer 70 of preferred characteristics with the coercivity electric field ec that comprises 750～1500 relative dielectric constant and 10～40kV/cm.Notice that form in the situation of piezoelectric layer 70, the coercivity electric field ec of piezoelectric layer 70 is that about 20～30 (kV/cm) and residual polarization intensity Pr are about 10～15 (μ C/cm under the condition of present embodiment
2).
After forming piezoelectric layer 70 in this way, upper electrode film 80 is formed on passage and forms substrate with on the entire top of wafer 110, as shown in Figure 6A.Upper electrode film 80 is made by for example iridium.Subsequently, shown in Fig. 6 B,, form piezoelectric element 300 by patterning piezoelectric layer 70 and upper electrode film 80 in each of the zone relative with pressure generation chamber 12.
At this, a plurality of piezoelectric element samples have been prepared under these conditions.Fig. 8 shows the residual polarization intensity (2Pr) of measuring samples and the result of coercive electric field (2Ec).As shown in Figure 8, be appreciated that in each sample piezoelectric layer that residual polarization intensity (2Pr) is 20～30 (μ C/cm
2), coercive electric field (2Ec) is 40～60 (kV/cm).
In addition, as mentioned above, such piezoelectric layer 70 has high piezoelectric constant d to 150～250 (pC/N)
31, the placement property of piezoelectric element 300 is significantly improved thus.In addition, piezoelectric layer 70 also has excellent crystallinity, and therefore for example the characteristic of withstand voltage and so on is also obviously improved.
Note, after forming piezoelectric element 300, form each the lead-in wire electrode 90 of drawing from piezoelectric element 300.Particularly, shown in Fig. 6 C, lead-in wire electrode 90 is formed as follows.At first, metal level 91 is formed on passage and forms substrate with on the whole top surface of wafer 110.Metal level 91 is made by for example gold (Au) etc.After this, by using the mask pattern (not shown) of making by for example photoresist etc., patterned metal layer 91 in each piezoelectric element 300.
Then, shown in Fig. 6 D, baffle is engaged to passage with wafer 130 and forms the top of substrate with formation piezoelectric element 300 1 sides of wafer 110.Baffle is silicon wafers with wafer 130, and will become a plurality of baffles 30.Baffle has the thickness of for example about 400 μ m with wafer 130.Therefore note, form substrate with wafer 110, obviously increased passage and formed the rigidity of substrate with wafer 110 by joining baffle to passage with wafer 130.
Subsequently, shown in Fig. 7 A, form substrate by the polishing passage and utilize fluorine nitric acid to carry out wet etching then, make passage form substrate and have preset thickness with wafer 110 with wafer 110.In this embodiment, passage forms substrate and processes through over etching with wafer 110, so that passage forms substrate has for example about 70 μ m with wafer 110 thickness.Subsequently, shown in Fig. 7 B, mask film 52 newly is formed on passage and is formed substrate with on the basal surface of wafer 110, and is patterned into predetermined shape.Mask film 52 is made by for example silicon nitride (SiN).After this, form substrate wafer 110 by the anisotropic etching passage, pressure generation chamber 12, connected component 13, ink feed path 14 etc. are formed on passage and form substrate with in the wafer 110, shown in Fig. 7 C.
After this, by modes such as scribing with passage form substrate with wafer 110 and baffle with the redundance cutting in both peripheral parts of wafer 130 and remove.Subsequently, nozzle plate 20 is engaged to passage and forms the surface of substrate with wafer 110, the surface opposite that described surface and baffle are joined to wafer 130.In nozzle plate 20, be drilled with jet hole 21.Simultaneously, flexible board 40 is engaged to baffle with on the wafer 130.After this, passage form substrate with wafer 110 grades be divided into a plurality of each have the passage formation substrate 10 of die size as shown in Figure 1.Thus, form the ink jet print head of this embodiment.
As mentioned above, according to the present invention, formed the structure piezoelectric element and had 750～1500 relative dielectric constant and the piezoelectric layer of the coercive electric field of 10～40kV/cm.This has increased the piezoelectric constant d of piezoelectric layer 70
31Therefore, the placement property of piezoelectric element 300 is enhanced.In addition, because the improvement of the crystallinity of piezoelectric layer 70, so for example the characteristic of withstand voltage and so on is significantly improved.Therefore, the placement property of piezoelectric element 300 is enhanced, and also is significantly longer its endurance life simultaneously.
At this, the sample of piezoelectric element of preparation has under these conditions been carried out durability test, wherein, predetermined driving pulse is applied to this sample 30,000,000,000 times continuously.Fig. 9 shows the displacement of piezoelectric element and the testing result that displacement reduces.Along band ground, for the sample piezoelectric element, the thickness of piezoelectric layer is 1.5 μ m, and the thickness of lower electrode film is 200nm, and the thickness of upper electrode film is 50nm.In addition, the driving pulse that applies in durability test is the sine wave of voltage 50V and frequency 100kHz.The driving pulse that applies in the displacement measurement process is the trapezoidal wave of voltage 30V and frequency 800Hz.
As shown in Figure 9, for piezoelectric element according to the present invention, displacement reduces along with the increase of the number of times that bears pulse.In other words, displacement reduction rate increases.But even after applying 30,000,000,000 times driving pulse, the displacement reduction rate is quite low by 13.3%.Find out obviously that from the result according to the present invention, the viability of piezoelectric element (piezoelectric layer) significantly improves.
(other embodiment)
The first embodiment of the present invention described above.But the essential structure of ink jet print head is not limited to aforesaid structure.In the first above-mentioned embodiment, for example by using sol-gal process to form piezoelectric layer.But piezoelectric layer can pass through formation such as sputtering method, CVD method.In this case, under 650～750 ℃, the piezoelectricity precursor film is carried out sintering.Then, the piezoelectricity precursor film is carried out the after annealing of half an hour to three hour.Thus, can form piezoelectric film with the characteristic that is similar to first embodiment.In addition, in a plurality of piezoelectric films that constitute piezoelectric layer, the film of below can form by sputtering method or CVD method, and the film of top can pass through formation such as sol-gal process, MOD method.
In addition, constituted the part of the head unit that is provided with the ink channel that is communicated with print cartridge etc. according to each ink jet print head of these embodiment, and be installed in the ink jet recording device.Figure 10 shows the schematic configuration figure of the example of ink jet recording device.As shown in figure 10, comprise that the head unit 1A of ink jet print head separately and 1B removably are set to box 2A and the 2B that constitutes ink supply unit.The carriage 3 that head unit 1A and 1B have been installed on it is set to the bracket axle 5 that is fixed in apparatus main body 4 in such a way, and promptly carriage 3 can freely move on the direction that described axle extends.Designated black ink composition and the color inks composition of spraying respectively of these head unit 1A and 1B.
In addition, from the driving power of drive motors 6 by a plurality of gears that do not illustrate be with 7 to be delivered to carriage 3 synchronously.Thus, make the carriage 3 that head unit 1A and 1B have been installed on it move along bracket axle 5.On the other hand, apparatus main body 4 is provided with the cylinder 8 along bracket axle 5.Be designed to transmission on cylinder 8 as the recording medium such as the scraps of paper and by the documentary film S that feeding-in roll etc. is sent into, wherein feeding-in roll is not shown.
Note,, the invention is intended to broadly be applied to all jet head liquids though top ink jet print head has been described first embodiment as the example of jet head liquid.The self-explantory the present invention of being can be applied to spray any jet head liquid of the liquid that is different from ink.The example of jet head liquid that injection is different from the liquid of ink comprises: be used for the various recording heads such as the image recording of printer; Be used to make the pigment injector head of the colour filtering of liquid crystal indicator etc.; Be used to form the electrode material injector head of electrode of organic EL display and FED (Field Emission Display) device etc.; The biological organic substance that is used to make biochip sprays first-class.In addition, self-explantory is that the present invention not only goes for the piezoelectric element of jet head liquid, also goes for being installed in the piezoelectric element such as in other various devices of microphone, sounding body, various vibrator, calling device etc.
Claims (7)
1. piezoelectric element comprises:
Bottom electrode, described bottom electrode are set to a face side of substrate;
Piezoelectric layer, described piezoelectric layer is made by the piezoelectric that comprises lead, zirconium and titanium, and is arranged on the described bottom electrode; With
Top electrode, described top electrode are arranged on the described piezoelectric layer,
Wherein, the relative dielectric constant of described piezoelectric layer is 750～1500, and the coercive electric field of described piezoelectric layer is 10～40kV/cm.
2. piezoelectric element as claimed in claim 1, wherein, the coercive electric field of described piezoelectric layer is 20～30kV/cm, and the residual polarization intensity of described piezoelectric layer is 10～15 μ C/cm
2
3. piezoelectric element as claimed in claim 1, wherein, the thickness of described piezoelectric layer is 0.5～5 μ m.
4. piezoelectric element as claimed in claim 1, wherein, the ratio of components of described piezoelectric layer satisfies the condition of Pb/ (Zr+Ti)=1.05～1.5 and Zr/Ti=53/47～75/25.
5. piezoelectric element as claimed in claim 1, wherein, described piezoelectric is a lead zirconate titanate.
6. jet head liquid comprises:
As each described piezoelectric element in the claim 1 to 5; With
Passage forms substrate, wherein said piezoelectric element is set to the face side that described passage forms substrate, oscillating plate is placed in described passage and forms between substrate and the described piezoelectric element, and the pressure generation chamber that is communicated with the jet hole of liquid droplets is set to described passage formation substrate.
7. liquid injection device comprises:
Jet head liquid as claimed in claim 6.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005097326 | 2005-03-30 | ||
| JP2005097326 | 2005-03-30 | ||
| JP2005347961 | 2005-12-01 |
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| Publication Number | Publication Date |
|---|---|
| CN1841805A true CN1841805A (en) | 2006-10-04 |
| CN100461481C CN100461481C (en) | 2009-02-11 |
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ID=37030707
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| CNB2006100669548A Expired - Fee Related CN100461481C (en) | 2005-03-30 | 2006-03-30 | Piezoelectric element, liquid-jet head using piezoelectric element and liquid-jet apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8210662B2 (en) | 2008-10-10 | 2012-07-03 | Seiko Epson Corporation | Liquid-ejecting head, liquid-ejecting apparatus and actuator device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003145761A (en) * | 2001-08-28 | 2003-05-21 | Seiko Epson Corp | Liquid jet head, its manufacturing method and liquid jet apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8210662B2 (en) | 2008-10-10 | 2012-07-03 | Seiko Epson Corporation | Liquid-ejecting head, liquid-ejecting apparatus and actuator device |
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