CN1841679A - Nano material and application in FET nanometer component - Google Patents
Nano material and application in FET nanometer component Download PDFInfo
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- CN1841679A CN1841679A CN 200510059662 CN200510059662A CN1841679A CN 1841679 A CN1841679 A CN 1841679A CN 200510059662 CN200510059662 CN 200510059662 CN 200510059662 A CN200510059662 A CN 200510059662A CN 1841679 A CN1841679 A CN 1841679A
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Abstract
The invention relates to a nanometer material with the diameter 1-200 nanometer, which comprises a single wall or multiple walls carbon nanometer pipe or other nanometer wire with the length 0.01-50 micrometer; the carbon nanometer pipe has the insulating layer which is covered by aluminum oxide, silicon oxide or hafnium oxide and so on. The preparing method adopts super marginal liquid as poor solvent to separate the hydrogene nitrate from the good solvent and makes it cover the carbon nanometer material surface to form mental oxide insulating covering layer; it deposits Pt electrode as source electrode and leakage electrode on the two ends exposing area of the carbon nanometer material of the insulating layer and deposits Pt electrode as griddle electrode on the area of the mental oxide insulating layer.
Description
Technical field
The present invention relates to a kind of nano material, relate to a kind of carbon nanomaterial that is coated with insulating barrier particularly.
The invention still further relates to the application of above-mentioned nano material aspect the field-effect transistor nano-device.
Background technology
Monodimension nanometer materials such as carbon nano-tube are because its unique electricity and mechanical property, and become the basic scientific research that has potentiality and the material of preparation nanoscale devices.Utilize carbon nano-tube to prepare different electronic devices and components at present, as diode, field-effect transistor and phase inverter with nano wire.(1:Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, Ph.Nano.Lett.2001,1,453.2:Martel, R.; Schmidt, T.; Shea, H.R.; Hertel, T.; Avouris, Ph.Appl.Phys.Lett.1998,73,2447.3:Fuhrer, M.S.; Kim, B.M.; Durkop, T.; Brintlinger, T.Nano.Lett.2002,2,755.4:Liu, X.L.; Lee, C.L.; Zhou, C.W.; Han, J.Appl.Phys.Lett.2001,79,3329.) still, most monodimension nanometer material field-effect transistors of having reported all use the above thick grid of 100nm, therefore need quite high grid voltage to regulate and control device.In addition, use substrate to do electrode and mean that all devices can only regulate and control simultaneously.
Should reduce device size, seek out higher operating current again, the thickness that reduces grid oxic horizon is crucial.Having the wide material that can be with can form bigger potential barrier with semiconductor layer, and the comparable narrow insulating barrier that can be with of identical thickness reduces leakage current more significantly.Aluminium oxide can bandwidth reach 9eV, and dielectric constant is also up to 8.6-10 (silica commonly used is 3.9).Meanwhile, aluminium oxide also has plurality of advantages such as hypotonicity, high thermal stability.
Although so how tempting advantage is arranged, also there is not aluminium oxide to report so far as the experiment that gate insulator coats monodimension nanometer material, mainly be because the aluminium oxide fusing point is very high, can't adopt conventional methods such as chemical vapor deposition (CVD).In addition, utilize ald (ALD) or molecular beam epitaxy (MBE) though technology can be made alumina insulating layer (1:Ye, P.D., Wilk, G.D.; Yang, B.; Kwo, J.; Chu, K.K.; Bude, J.Appl.Phys.Lett.2003,83,180.2:Hong, M.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; Sergent, A.M.Science1999,283,1897.), but complex procedures costs an arm and a leg, and can only make the larger area insulating layer film, be unfavorable for the independent making and the control of individual devices.
Summary of the invention
The object of the present invention is to provide a kind of nano material.
Another purpose of the present invention is to provide the method for the above-mentioned nano material preparation field-effect transistor of a kind of usefulness nano-device.
For achieving the above object, nano material provided by the invention is the monodimension nanometer material that has insulating barrier, for diameter is that 1～200 nanometer, length are 0.01～50 micron single wall or multi-walled carbon nano-tubes or other nano wire, on this carbon nano-tube, have the insulating barrier that coats with oxides such as aluminium oxide, silica or hafnium oxide.
The present invention utilizes the step of above-mentioned nano material preparation field-effect transistor nano-device, is to prepare carbon nanomaterial earlier, then this material preparation is become the field-effect transistor nano-device.
Preparation method of the present invention, adopt supercritical fluid polarity nitrate to be separated from good solvent and be coated on the monodimension nanometer material surface as poor solvent, nitrate slowly decomposes under proper temperature, forms discontinuous, stable metal oxide insulating coating at the monodimension nanometer material outer wall.Supercritical fluids such as carbon dioxide have been compared many advantages with traditional solvent: it is not flammable, nontoxic substantially and environmental friendliness, its lower critical temperature (31.1 ℃) and pressure (73.8 crust) are easy to obtain, thereby, many researchers are referred to as a kind of " continuable green solvent " (Cooper, A.I.Adv.Mater.2001,13,1111.).The many liquid solvents of the ratio of viscosities of postcritical carbon dioxide are much lower, surface tension that it is quite low and surface energy-even than many perfluocarbons low-make it have the good wetting property energy, help azotate deposition at the carbon nano-tube outer wall.Simultaneously, adopt postcritical carbon dioxide, product separates and purifying easily, and solvent load is few.Utilize focused ion beam (FIB) Direct observation to select the suitable monodimension nanometer material that has insulating barrier, and at exposed monodimension nanometer material two ends in-situ deposition Pt electrode as source, drain electrode, at the area deposition Pt electrode that is coated with the metal oxide insulating barrier as gate electrode.At room temperature this material has tangible field effect phenomenon, and the field-effect transistor of the common structure of grid voltage that the regulation and control device is required is low, and each device on a circuit version can be controlled by proprietary gate electrode respectively.
Preparation method of the present invention comprises the following steps:
The 1st step, the purifying of monodimension nanometer material and processing (is example with the carbon nano-tube): with single wall or multi-walled carbon nano-tubes join quality for its 10
2～10
4In the sulfuric acid doubly and the mixed acid of nitric acid, sulfuric acid and nitric acid volume ratio are 2: 1～4: 1, ultrasonic 1～5 hour, with filtering behind the distilled water diluting, and be washed till neutrality, and vacuumize obtains the carbon nano-tube that length is 0.01～50 micron purifying;
The 2nd step, the insulating barrier of monodimension nanometer material coats: after the carbon nano-tube after the above-mentioned purified processing and nitrate ethanolic solution are joined high-pressure bottle by 1: 5～1: 20 mass ratio, put into Water Tank with Temp.-controlled, when temperature constant at 60～150 ℃, be preferably 80～100 ℃, by the pump pressure injecting carbon dioxide, make pressure reach 5.0 * 10
6～15 * 10
6Pascal is preferably 7 * 10
6～10 * 10
6Pascal keeps cooling the temperature to room temperature after 2～24 hours, and container decompression emptying after the vacuumize of taking-up sample, obtains the discontinuous coated carbon nanotube of metal oxide.Described oxide comprises aluminium oxide, silica, hafnium oxide etc.
In the 3rd step, prepare the Ti/Au electrode pair array with photoetching technique at the silica surface of thermal oxidation;
The 4th the step, then the preparation the monodimension nanometer material that has insulating barrier be dispersed in the acetone soln, with this hanging drop in the right silicon dioxide substrate of belt electrode;
The 5th step, after treating that solvent evaporates fully, put into the vacuum chamber of focused ion beam system, observe and select the suitable monodimension nanometer material that has insulating barrier, and at exposed monodimension nanometer material two ends in-situ deposition Pt electrode as source, drain electrode, as gate electrode, in-situ deposition Pt lead-in wire links to each other with the Ti/Au electrode at the area deposition Pt electrode that is coated with the metal oxide insulating barrier;
In the 6th step, the monodimension nanometer material fieldtron that has insulating barrier that obtains is carried out Performance Detection.
Among the preparation method of the present invention, described Ti/Au electrode pair array, its electrode width is 0.3～1.5 micron, to 1～9 micron of electrode spacing.
Among the preparation method of the present invention, described carbon nano-tube diameter is that 1～200 nanometer, length are 0.01～50 micron; The width of Pt contact conductor in 300 nanometers between 500 nanometers.
Among the preparation method of the present invention, the described detection of carrying out field effect behavior is to utilize HP4140B semi-conductor test instrument and MP1008 probe station, is the scope interscan of-2～10V at source-drain voltage, thereby draws the output performance of device.These performances measure in air at room temperature.
Among the preparation method of the present invention, its product is a p type field-effect transistor.
Provided by the inventionly have the monodimension nanometer material of insulating barrier and the preparation method of electronic device has following feature and advantage:
1. to disclose by supercritical fluid technique, phase detachment technique for the first time be the method for monodimension nanometer material coated insulation layer in the present invention.
2. method disclosed by the invention is compared with the phase detachment technique that tradition is simple, has improved coating efficiency greatly, and is practical, easy to operate controlled.Product separates and purifying easily, and solvent load is few.
3. the supercritical carbon dioxide of the present invention's employing is safe and reliable, does not burn, and nontoxic pollution-free is a kind of continuable green solvent.
4. method disclosed by the invention can obtain having the monodimension nanometer material of insulating barrier in a large number and effectively, and this lays a solid foundation for a large amount of nanoscale electronics.
5. the present invention's electrode of preparing nano-device has utilized the focused ion beam lithography technology, can Direct observation select the suitable single monodimension nanometer material that has insulating barrier, and can be at exposed monodimension nanometer material two ends in-situ deposition Pt electrode as source, drain electrode, at the area deposition Pt electrode that is coated with the metal oxide insulating barrier as gate electrode.Technology is simple, and contact resistance is little.
Description of drawings
Fig. 1 is the apparatus structure schematic diagram that monodimension nanometer material is made insulating barrier for the present invention by supercritical carbon dioxide, 1-dioxide bottle wherein, 2-syringe pump, 3,5, the 7-valve, 4-digital altimeter, 6-stainless steel high-pressure bottle, 8-tank, 9-temperature controller;
Fig. 2 is the transmission electron microscope photo of the multi-walled carbon nano-tubes that has insulating barrier of the present invention's preparation;
Fig. 3 is the structural representation of the monodimension nanometer material field-effect transistor that has insulating barrier of the present invention's preparation;
Fig. 4 is the output characteristic curve of the multi-walled carbon nano-tubes field-effect transistor that has insulating barrier of the present invention's preparation.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples.
Embodiment 1
The 1st step, 100 milligrams multi-walled carbon nano-tubes are joined in the mixed acid of 20 milliliters sulfuric acid and nitric acid (volume ratio is 3: 1), ultrasonic 2 hours, filter water dilution back with 100 milliliters, be washed till neutrality with distilled water again, vacuumize obtains the carbon nano-tube that the quilt of purifying prescinds, its diameter is 50～80 nanometers, and length is 0.5～5 micron.
The 2nd step, as shown in Figure 1, after the aluminum nitrate ethanolic solution of the multi-walled carbon nano-tubes after 10 milligrams of purified processing and 2 milliliter 5% joined stainless steel high-pressure bottle 6, put into Water Tank with Temp.-controlled 8, regulate temperature controller 9, make temperature constant, open valve 3 and 5 at 35 ℃, by syringe pump 2 injecting carbon dioxides, when the pressure of barometer 4 reaches 9 * 10
6Behind the Pascal, valve-off 3 keeps this pressure and temperature after 10 hours, cools the temperature to room temperature, opens valve 7 and makes high-pressure bottle 6 decompression emptying, after the vacuumize of taking-up sample, obtains the discontinuous coated carbon nanotube of aluminium oxide.Under transmission electron microscope, observe, obtain electromicroscopic photograph as shown in Figure 2.
The 3rd step is at the silicon dioxide (SiO of thermal oxidation
2) surface prepare the Ti/Au electrode pair array with photoetching technique, electrode width is 0.5 micron, to 3 microns of electrode spacings.
The 4th the step, then the preparation the insulating barrier multi-walled carbon nano-tubes that carries be dispersed in the acetone soln, with this hanging drop in the right silicon dioxide substrate of belt electrode;
The 5th step, after treating that solvent evaporates fully, put into the vacuum chamber of focused ion beam system, focused ion beam electronic current with 4 skins peace is observed the multi-walled carbon nano-tubes of selecting suitable band alumina insulating layer, as shown in Figure 2, diameter is 35 nanometers, length is 12 microns, and at exposed monodimension nanometer material two ends in-situ deposition Pt electrode as source, drain electrode, at the area deposition Pt electrode that is coated with alumina insulating layer as gate electrode, in-situ deposition Pt lead-in wire links to each other with the Ti/Au electrode, and the width of lead-in wire is 450 nanometers.The device architecture schematic diagram, as shown in Figure 3.
The 6th step, product is carried out the detection of field effect behavior, to obtain qualified field-effect transistor, utilize the curve of output (Fig. 4) of HP4140B semi-conductor test instrument and MP1008 probe station measuring element in air at room temperature, source-drain voltage is in the scope interscan of-2～10V, thereby draws the output performance of device.
Press the preparation method of embodiment 1, unique different be to replace the aluminum nitrate ethanolic solution with nitric acid silicon ethanolic solution, obtain the silica coated carbon nanotube.Purposes is with embodiment 1.
Embodiment 3
Press the preparation method of embodiment 1, unique different be to replace the aluminum nitrate ethanolic solution with the hafnium nitrate ethanolic solution, obtain the hafnium oxide coated carbon nanotube.Purposes is with embodiment 1.
Claims (8)
1. nano material, its diameter is that 1～200 nanometer, length are 0.01～50 micron single wall or multi-walled carbon nano-tubes or other nano wire, has the insulating barrier that coats with oxides such as aluminium oxide, silica or hafnium oxide on this carbon nano-tube.
2. the method with the described nano material preparation field-effect transistor of claim 1 nano-device comprises the following steps:
The 1st the step, the purifying of carbon nanomaterial and processing: with carbon nanomaterial join quality for its 10
2～10
4In the mixed acid of sulfuric acid doubly and nitric acid, sulfuric acid and nitric acid volume ratio are 2: 1～4: 1, ultrasonic 1～5 hour, filter, and be washed till neutrality, vacuumize obtains the carbon nano-tube that length is 0.01～50 micron purifying;
The 2nd step, the insulating barrier of carbon nanomaterial coats: after the ethanolic solution of the carbon nano-tube of step 1 and aluminum nitrate, nitric acid silicon or hafnium nitrate is joined high-pressure bottle by 1: 5～1: 20 mass ratio, put into 60～150 ℃ of Water Tanks with Temp.-controlled, injecting carbon dioxide makes container inner pressure reach 5.0 * 10
6～15 * 10
6Pascal keeps reducing to room temperature after 2～24 hours, after the vacuumize of taking-up sample, obtains aluminium oxide, silica or hafnium oxide coated carbon nanotube;
In the 3rd step, prepare the Ti/Au electrode pair array with photoetching technique at the silica surface of thermal oxidation;
The 4th step was dispersed in the carbon nanomaterial that has insulating barrier of step 2 preparation in the acetone soln, with this hanging drop in the right silicon dioxide substrate of the belt electrode of step 3 preparation;
The 5th step, after treating solvent evaporates, put into the vacuum chamber of focused ion beam system, selection has the carbon nanomaterial of insulating barrier, and at exposed carbon nanomaterial two ends in-situ deposition Pt electrode as source, drain electrode, as gate electrode, in-situ deposition Pt lead-in wire links to each other with the Ti/Au electrode at the area deposition Pt electrode that is coated with the metal oxide insulating barrier.
3. the method for claim 2 is characterized in that, the filtration in the 1st step is with filtering behind the distilled water diluting.
4. the method for claim 2 is characterized in that, the temperature of Water Tank with Temp.-controlled is 80～100 ℃ in the 2nd step.
5. the method for claim 2 is characterized in that, is by the pump pressure injecting carbon dioxide in the 2nd step.
6. claim 2 or 5 method is characterized in that, it is 7 * 10 that injecting carbon dioxide makes the pressure in the reaction vessel
6～10 * 10
6Pascal.
7. the method for claim 2 is characterized in that, the Ti/Au electrode pair array in the 3rd step, and its electrode width is 0.3～1.5 micron, to 1～9 micron of electrode spacing.
8. the method for claim 2 is characterized in that, the width of Pt contact conductor in the 5th step in 300 nanometers between 500 nanometers.
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| CN 200510059662 CN1841679A (en) | 2005-03-29 | 2005-03-29 | Nano material and application in FET nanometer component |
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| CN 200510059662 CN1841679A (en) | 2005-03-29 | 2005-03-29 | Nano material and application in FET nanometer component |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100515937C (en) * | 2006-12-22 | 2009-07-22 | 中国科学院上海硅酸盐研究所 | Preparation method of nano silica dioxide granule enveloping carbon nanotube composite powder |
| CN101215431B (en) * | 2008-01-18 | 2011-08-24 | 天津大学 | Silicon oxide coating nano carbon composite material and preparation method thereof |
| US11349140B2 (en) * | 2018-07-10 | 2022-05-31 | Hyundai Motor Company | Antioxidant for electrolyte membrane of fuel cells and method for preparing the same |
-
2005
- 2005-03-29 CN CN 200510059662 patent/CN1841679A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100515937C (en) * | 2006-12-22 | 2009-07-22 | 中国科学院上海硅酸盐研究所 | Preparation method of nano silica dioxide granule enveloping carbon nanotube composite powder |
| CN101215431B (en) * | 2008-01-18 | 2011-08-24 | 天津大学 | Silicon oxide coating nano carbon composite material and preparation method thereof |
| US11349140B2 (en) * | 2018-07-10 | 2022-05-31 | Hyundai Motor Company | Antioxidant for electrolyte membrane of fuel cells and method for preparing the same |
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