CN1841512A - Perpendicular magnetic recording medium, manufacturing method thereof, and magnetic storage device - Google Patents

Perpendicular magnetic recording medium, manufacturing method thereof, and magnetic storage device Download PDF

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CN1841512A
CN1841512A CN 200610068381 CN200610068381A CN1841512A CN 1841512 A CN1841512 A CN 1841512A CN 200610068381 CN200610068381 CN 200610068381 CN 200610068381 A CN200610068381 A CN 200610068381A CN 1841512 A CN1841512 A CN 1841512A
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magnetic
magnetosphere
recording medium
layer
substrate
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CN100440323C (en
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向井良一
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Lishennoco Co ltd
Resonac Holdings Corp
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Fujitsu Ltd
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Abstract

A perpendicular magnetic recording medium for enabling high density recording is disclosed. The perpendicular magnetic recording medium includes a substrate on which a soft magnetic underlayer, a seed layer made of a non-crystalline material, an underlayer made of Ru or an Ru alloy including Ru as a main component, and a recording layer including a first magnetic layer and a second magnetic layer. The first and second magnetic layers include a plurality of magnetic grains having easy magnetization axes in a substantially perpendicular direction with respect to the substrate surface, and first and second nonmagnetic non-soluble phases segregating the magnetic grains of the first and second magnetic layers, respectively. The first magnetic layer includes the first non-soluble phase at a first atomic concentration that is higher than a second atomic concentration of the second non-soluble phase in the second magnetic layer.

Description

Perpendicular magnetic recording medium and manufacture method thereof and magnetic memory apparatus
Technical field
The present invention relates generally to a kind of perpendicular magnetic recording medium and manufacture method thereof and magnetic memory apparatus.The invention particularly relates to the perpendicular magnetic recording medium that comprises recording layer, in described recording layer, isolate magnetic particle by nonmagnetic substance.
Background technology
Magnetic memory apparatus as hard disk drive and so on is the digital signal memory storage that is suitable for the increase capacity, has low storage unit cost (every).After reaching in recent years, for example along with the development of hard disk drive applications in personal computer and digital picture/audiofrequency apparatus, to the demand of hard disk drive also among increasing.And, require the further capacity of increase hard disk drive.
By on magnetic recording medium, realizing more highdensity record, can realize simultaneously that the memory capacity of hard disk drive increases and the cost reduction.By realizing more highdensity record, can reduce the quantity of magnetic recording media, reduce so that realize cost thereby can reduce the quantity of magnetic head.
In an example, improve the S/N ratio by increasing resolution with the reduction noise, and then in magnetic recording media, realize more highdensity record.Note, realize that by the particle diameter and the magnetic isolation magnetic particle that reduce to be arranged on the magnetic particle in the recording layer noise reduces usually.
Perpendicular magnetic recording medium comprises substrate, stacks gradually by soft magnetic material on this substrate and makes soft magnetic underlayer and recording layer.Recording layer is made by the CoCr alloy usually, and forms by sputter.In this case, heated substrates carries out the sputter of CoCr alloy simultaneously.By this way, can form the magnetic particle of being made by the CoCr alloy that is rich in Co, nonmagnetic Cr can accumulate in the particle edges place of magnetic particle, thereby can realize the magnetic isolation of magnetic particle.
Soft magnetic underlayer formation record or reproduction period flow through the magnetic path of the magnetic flux of magnetic head.When soft magnetic underlayer is made by crystalline material, because the formation of magnetic domain can produce spike noise.Therefore soft magnetic underlayer is preferably made by amorphous or micro crystal material, makes to be difficult for forming magnetic domain.Notice that when forming recording layer, restriction is used for the heating-up temperature of heated substrates, so that prevent the crystallization of soft magnetic underlayer.
In this respect, proposed a kind of recording layer in the prior art, wherein the magnetic particle of being made by the CoCr alloy passes through by SiO 2The non magnetic parent phase of making is isolated from each other, and this recording layer has improved magnetic isolation, does not need high-temperature heat treatment simultaneously.Such recording medium structure is called granular structure (as referring to Japanese Laid-Open Patent Publication No.2003-217107 and Japanese Laid-Open Patent Publication No.2003-346334).
Have at recording layer under the situation of granular structure, if recording layer is formed on the inculating crystal layer simply, then magnetic particle can be bonded to each other and grow, and perhaps the space between magnetic particle (magnetic space) can be inhomogeneous.When magnetic particle was bonded to each other, the particle diameter of magnetic particle (diameter) distribution range can increase.And when the space between magnetic particle became inhomogeneous, the interaction between magnetic particle can not fully reduce.The media noise of outcome record layer can increase, and the reduction of S/N ratio can occur.
Summary of the invention
Conceived the present invention at one or more problem that correlation technique exists, its objective is provides a kind of low media noise and good S/N ratio and perpendicular magnetic recording medium that can carry out high density recording realized.The invention still further relates to the manufacture method and the magnetic memory apparatus of this recording medium.
Another object of the present invention provides the manufacture method of a kind of perpendicular magnetic recording medium, this perpendicular magnetic recording medium, and a kind of magnetic memory apparatus, and this perpendicular magnetic recording medium can be realized good S/N ratio and high playback (playback) output.
According to technical scheme of the present invention, a kind of perpendicular magnetic recording medium is provided, comprise:
Substrate;
Soft magnetic underlayer is formed on the substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on the soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on the inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere, and is formed on first bottom; Wherein
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
First magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And, wherein, this first non-dissolubility phase is set with first atomic concentration with the first non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other;
Second magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis; And, wherein, this second non-dissolubility phase is set with second atomic concentration with the second non magnetic non-dissolubility phase that described second magnetic particle is isolated from each other; And
First atomic concentration of the first non-dissolubility phase in this first magnetosphere is set to the second atomic concentration height than the second non-dissolubility phase in this second magnetosphere.
According to embodiments of the invention, owing on the inculating crystal layer of making by non-crystalline material, form the crystal grain of bottom, so the particle diameter of crystal grain can be consistent, and the crystal grain of bottom can be formed uniformly.Because the growth first magnetospheric magnetic particle on the grain surface of bottom, and second magnetosphere of growing on the first magnetospheric magnetic particle surface, therefore the first and second magnetospheric magnetic particles also can be formed uniformly.And, because bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, therefore can realize the excellent lattice compatibility with the first magnetospheric magnetic particle.In addition, because the atomic concentration of the first non-dissolubility phase that first magnetosphere is set to comprise is higher than second magnetosphere, therefore the first magnetospheric magnetic particle can be isolated when growth fully.That is to say, in first magnetosphere, can prevent the combination of magnetic particle mutually by non-dissolubility.The second magnetospheric magnetic particle of on the first magnetospheric magnetic particle surface, growing one to one, thus the second magnetospheric magnetic particle also can be isolated fully.In this way, the first and second magnetospheric magnetic particles can be formed uniformly, and realize good crystallinity, and magnetic particle can be isolated each other fully, thereby can reduce media noise.As a result, in perpendicular magnetic recording medium, can improve the S/N ratio, and can realize high density recording.
According to another technical scheme of the present invention, a kind of perpendicular magnetic recording medium is provided, comprise:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere that is layered on this first magnetosphere, and is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This first magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And the non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other, wherein, this first magnetosphere is arranged to have first saturation magnetic flux density;
This second magnetosphere is made by the metal hard magnetic material, and be included in the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis, wherein, this second magnetosphere is arranged to have second saturation magnetic flux density; And
This second magnetospheric second saturation magnetic flux density is set to than this first magnetospheric first saturation magnetic flux density height;
This second magnetospheric second magnetic particle is arranged on this first magnetospheric first magnetic particle surface.
According to embodiments of the invention, perpendicular magnetic recording medium comprises recording medium, and this recording medium can be deposited on first magnetosphere with granular structure by second magnetosphere that the metal hard magnetic material is made and realize.Because the first magnetospheric magnetic particle is arranged in granular structure, therefore the first magnetospheric magnetic particle can be evenly distributed.Thereby, owing to the second magnetospheric magnetic particle is formed on the first magnetospheric magnetic particle, so evenly distributed second magnetosphere that is delivered to of the first magnetospheric magnetic particle.In this way, the second magnetospheric magnetic particle also can be evenly distributed.Thus, can reduce the media noise of perpendicular magnetic recording medium.In addition, because the second magnetospheric saturation magnetic flux density is set to than the first magnetospheric saturation magnetic flux density height, therefore can reduce the total film thickness of recording layer, and because higher in the layer place saturation magnetic flux density near magnetic head, so the playback output level of perpendicular magnetic recording medium rises to higher output level.In this way, in perpendicular magnetic recording medium, can obtain good S/N ratio and higher playback output.
According to another technical scheme of the present invention, a kind of magnetic memory apparatus is provided, comprise: have the recoding/reproduction unit of magnetic head and according to the perpendicular magnetic recording medium of the embodiment of the invention.Owing in perpendicular magnetic recording medium, reduced media noise according to the embodiment of the invention, therefore can improve the S/N ratio, and can high density recording.
According to another scheme of the present invention, a kind of manufacture method of perpendicular magnetic recording medium, this perpendicular magnetic recording medium comprises: substrate, on this substrate, form soft magnetic underlayer, inculating crystal layer, first bottom, first magnetosphere and second magnetosphere continuously, wherein first and second magnetospheres be included in respectively with the vertical substantially direction of this substrate surface on the non magnetic non-dissolubility that has a plurality of magnetic particles of easy magnetizing axis and isolate described magnetic particle mutually, the method includes the steps of:
On this soft magnetic underlayer, form the inculating crystal layer of making by non-crystalline material;
On this inculating crystal layer, form by the Ru or first bottom made as the Ru alloy of principal ingredient with Ru;
On this first bottom, form first magnetosphere by the sputter that utilizes first sputtering target; And
On this first magnetosphere, form second magnetosphere by the sputter of using second sputtering target; Wherein
This first sputtering target and this second sputtering target comprise hard magnetic material and nonmagnetic substance, and this nonmagnetic substance is made by any of oxide, carbonide or nitride; And
This first sputtering target comprises nonmagnetic substance, and its atomic concentration is than the atomic concentration height of the nonmagnetic substance in this second sputtering target.
According to embodiments of the invention, in bottom, be formed uniformly crystal grain, and on bottom, form first magnetosphere of nonmagnetic substance, on first magnetosphere, form second magnetosphere of nonmagnetic substance thereafter with low atomic concentration with higher atomic concentration.In this way, the first and second magnetospheric magnetic particles can be formed uniformly, and can prevent the combination of magnetic particle like this, thereby can realize the perpendicular magnetic recording medium that media noise reduces.Thus, can realize to carry out high density recording and S/N than the perpendicular magnetic recording medium that improves.
Description of drawings
Fig. 1 is the sectional view of expression according to the perpendicular magnetic recording medium structure of first embodiment of the invention;
Fig. 2 is the detailed structure view of expression perpendicular magnetic recording medium shown in Figure 1;
Fig. 3 is the sectional view of the line A-A intercepting in Fig. 2;
Fig. 4 is the sectional view of expression according to the perpendicular magnetic recording medium structure of second embodiment of the invention;
Fig. 5 represents the detailed structure view of perpendicular magnetic recording medium shown in Figure 4;
Fig. 6 is the sectional view of expression according to the perpendicular magnetic recording medium structure of third embodiment of the invention;
Fig. 7 is the sectional view of expression according to the perpendicular magnetic recording medium structure of fourth embodiment of the invention;
Fig. 8 is the sectional view of expression according to the perpendicular magnetic recording medium structure of fifth embodiment of the invention;
Fig. 9 is the sectional view of expression according to the perpendicular magnetic recording medium structure of sixth embodiment of the invention;
Figure 10 is the sectional view of expression according to the perpendicular magnetic recording medium structure of seventh embodiment of the invention;
Figure 11 is the detailed structure view of expression perpendicular magnetic recording medium shown in Figure 10;
Figure 12 is the sectional view of the line B-B intercepting in Figure 11;
Figure 13 is the sectional view of expression according to the perpendicular magnetic recording medium structure of eighth embodiment of the invention;
Figure 14 is the detailed structure view of expression perpendicular magnetic recording medium shown in Figure 13;
Figure 15 is the sectional view of expression according to the perpendicular magnetic recording medium structure of ninth embodiment of the invention;
Figure 16 is the sectional view of expression according to the perpendicular magnetic recording medium structure of tenth embodiment of the invention;
Figure 17 is the sectional view of expression according to the perpendicular magnetic recording medium structure of eleventh embodiment of the invention;
Figure 18 is the sectional view of expression according to the perpendicular magnetic recording medium structure of twelveth embodiment of the invention;
Figure 19 is that expression is according to the chart that concerns between average output valve and the recording layer thickness in the magnetic storage recording medium of the embodiment of the invention;
Figure 20 is the structural drawing of expression according to the magnetic memory apparatus of thriteenth embodiment of the invention.
Embodiment
Below with reference to accompanying drawing the preferred embodiments of the present invention are described.
(first embodiment)
Fig. 1 is the sectional view of expression according to the perpendicular magnetic recording medium structure of first embodiment of the invention.
Perpendicular magnetic recording medium 10 with reference to figure 1, the first embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 15, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 15 comprises first magnetosphere 16 and second magnetosphere 17 that stacks gradually from first bottom, 14 1 sides.
For example, substrate 11 can be corresponding to glass substrate, silicon substrate or the aluminium alloy base plate of plastic base, crystallized glass substrate, tempering.Under the situation of perpendicular magnetic recording medium 10, for example can use the film that constitutes by polyester (PET), tygon (PEN) or polyimide (PI) with good heat resistance corresponding to tape-shaped medium's.
Soft magnetosphere 12 can be arranged to thickness at 50nm in 2 mu m ranges, and for example can make at least a among this magnetic material containing element Fe, Co, Ni, Al, Si, Ta, Ti, Zr, Hf, V, Nb, C or the B by amorphous or crystallite magnetic material.Note, soft magnetic underlayer 12 be not defined as single layer structure, can stacked multilayer to form soft magnetic underlayer 12.
And, notice that the saturation magnetic flux density Bs of the soft magnetic material of formation soft magnetic underlayer 12 preferably is set to 1.0T at least, so that centralized recording magnetic field.For example, FeSi, FeAlSi, FeTaC, CoNbZr, CoCrNb, NiFeNb or Co can be used as such soft magnetic material.Preferred soft magnetic underlayer 12 has the high frequency magnetoconductivity, so that realize high-speed record.For example, soft magnetic underlayer 12 can pass through plating, sputter, vapor deposition or CVD (chemical vapor deposition) formation.
Inculating crystal layer 13 can be arranged to thickness at 1.0nm in the 10nm scope, and for example can make by non-crystalline material, this non-crystalline material comprises at least a in Ta, Ti, C, Mo, W, Re, Os, Hf, Mg, Pt or its alloy.And inculating crystal layer 13 can be made by the non magnetic NiP of amorphous.Notice that preferred inculating crystal layer 13 is made of the monofilm of thickness in 1.0～5.0nm scope, so that guarantee that soft magnetic underlayer 12 and recording layer 15 are approaching.
First bottom 14 can be arranged to thickness in the scope of 2～14nm, and for example can be made by Ru or Ru-M1 alloy (M1 corresponding among Elements C o, Cr, Fe, Ni and the Mn at least a), this Ru-M1 alloy has hexagonal close packing (hcp) structure and comprises Ru as principal ingredient.First bottom 14 comprises crystal grain 14a and is formed between the adjacent crystal grain 14a at the interface grain boundary part 14b.In other words, first bottom 14 is corresponding to the polycrystal that is made of Ru or Ru-M1 alloy.
Each all comprises magnetic particle of being made by hard magnetic material (16a, 17a) and the non-dissolubility of being made by nonmagnetic substance (16b, 17b) mutually first magnetosphere 16 and second magnetosphere 17, and is arranged to so-called granular structure.Be described in the crystal growth that first bottom 14, first magnetosphere 16 and second magnetosphere, 17 places occur below with reference to Fig. 2 and Fig. 3.
Fig. 2 is the detailed structure view of perpendicular magnetic recording medium 10 shown in Figure 1; And Fig. 3 is the sectional view of the perpendicular magnetic recording medium 10 of the line A-A intercepting in Fig. 2.
Consult Fig. 2 and Fig. 3, first bottom 14 is made of the crystal grain 14a sequence that combines togather by grain boundary part 14b.In this way, realized the good crystallinity of crystal grain 14a.And (001) surface of crystal grain 14a is arranged to parallel with respect to substrate surface.Therefore, the crystallinity and the crystal orientation of first bottom, 14 surfaces improve, and crystallinity and the crystalline orientation of the magnetic particle 16a of epitaxially grown first magnetosphere 16 also can improve on first bottom, 14 surfaces.
And, note because first bottom 14 is formed on the amorphous inculating crystal layer 13, therefore cause the self-organization of first bottom 14, and crystal grain 14a is shaped to substantially the same size.Therefore, can arrange crystal grain 14a equably.And, because the magnetic particle 16a of first magnetosphere 16 is grown on the crystal grain 14a surface of first bottom 14, therefore also can arrange magnetic particle 16a equably.Then, the magnetic particle 17a that is formed on second magnetosphere 17 on first magnetosphere 16 also can arrange equably.In this way, can prevent the interaction between the magnetic particle 17a of the interaction between the magnetic particle 16a of first magnetosphere 16 and second magnetosphere 17, and can reduce media noise.The magnetic particle 17a that please notes second magnetosphere 17 preferably corresponds on the magnetic particle 16a surface that benchmark is formed on first magnetosphere 16 one by one.In this way, evenly distributed second magnetosphere 17 that is passed to of the magnetic particle 16a of first magnetosphere 16.
The magnetic particle 16a that first magnetosphere 16 and second magnetosphere 17 comprise column respectively and 17a and the non-dissolubility made by nonmagnetic substance be 16b and 17b mutually, it is distributed in around magnetic particle 16a and the 17a, and the adjacent magnetic particle of physical isolation is to 16a and 17a. Non-dissolubility phase 16b and 17b are filled in the space that forms between the magnetic particle 16a respectively and in the space that forms between magnetic particle 17a.
As shown in Figure 3, in second magnetosphere 17, magnetic particle 17a is centered on by non-dissolubility phase 17b, and by non-dissolubility phase 17b and adjacent magnetic particle 17a isolation.Notice that first magnetosphere 16 also has similar in appearance to the structure of second magnetosphere 17.For example, can in sputter procedure, form the granular structure of first magnetosphere 16 and second magnetosphere 17 by the self-organization that causes magnetic particle 16a and 17a.Notice that each among magnetic particle 16a and the 17a all preferably is arranged to single-crystal region structure (singlecrystalline region structure); Yet magnetic particle 16a and 17a can comprise polycrystalline and crystal boundary and an intragranular crystal defect.
Magnetic particle 16a and 17a are by making corresponding to a kind of hard magnetic material in Ni, Fe, Co, Ni alloy, Fe alloy, CoCr, Co Pt or the CoCr alloy.For example, the CoCr alloy can comprise CoCrTa, CoCr Pt, CoCr Pt-M2.Here, M2 can be corresponding to element B, Mo, Nb, Ta, W, Cu or its alloy. Magnetic particle 16a and 17a have the easy magnetizing axis that is substantially perpendicular to substrate surface.For example, have under the situation of hcp structure at the hard magnetic material of magnetic particle 16a and 17a, magnetic particle 16a and 17a are directed, thereby its c axle is basically perpendicular to substrate.
Under the situation that magnetic particle 16a and 17a are made by CoCr Pt-M2, Co content is set to account for the 50-80 atom % of this material, the Pt composition is set to account for the 15-30 atom % of this material, M2 concentration is arranged to greater than 0 atom %, but be not more than 20 atom %, and all the other content of this material are arranged to corresponding to Cr.In the present embodiment, Pt content is arranged to perpendicular magnetic recording medium height than routine,, and can be increased in the coercive force on the direction vertical with substrate so that can increase anisotropic magnetic field.
Non-dissolubility phase 16b and 17b are made by nonmagnetic substance, and this nonmagnetic substance neither dissolves also and do not form compound with the hard magnetic material that constitutes magnetic particle 16a and 17a.Nonmagnetic substance is corresponding to the compound that is made of a kind of element among elements Si, Al, Ta, Zr, Y, Ti and the Mg and at least a element among element O, N and the C.For example, nonmagnetic substance comprises: as SiO 2, Al 2O 3, Ta 2O 5, ZrO 2, Y 2O 3, TiO 2Oxide with MgO; As Si 3N 4, AlN, TaN, ZrN, TiN and Mg 3N 2Nitride; With carbonide as SiC, TaC, ZrC and TiC.By non-dissolubility phase 16b and the 17b that is made by nonmagnetic substance is set, can make adjacent magnetic particle 16a/17a physical isolation each other.By this way, can reduce the magnetic interaction between the magnetic particle 16a/17a, the result can reduce media noise.
And, note constituting the nonmagnetic substance of non-dissolubility phase 16b/17b preferably corresponding to insulating material.By this way, can prevent to realize tunnel effect to occur in the electronics of hard magnetic, and can reduce the exchange interaction between the magnetic particle 16a/17a.
The atomic concentration of the non-dissolubility phase 16b of first magnetosphere 16 preferably is arranged in the scope of 10 atom %-20 atom %, more preferably is arranged in the 13 atom %-20 atom % scopes.Notice that as the atomic concentration Y1 of non-dissolubility phase 16b during less than 10 atom %, magnetic particle 16a is easy to be bonded to each other.When the atomic concentration Y1 of non-dissolubility phase 16b surpassed 20 atom %, the atomic concentration of magnetic particle 16a was reduced to and can causes the level that output reduces of reproducing.The atomic concentration Y1 of non-dissolubility phase 16b can be expressed as follows:
Y1=M Y1/ (M X1+ M Y1) * 100[atom %]
Wherein, M X1Representative constitutes the atomicity of the magnetic particle 16a of first magnetosphere 16, M Y1Representative constitutes the atomicity of the non-dissolubility phase 16b of first magnetosphere 16.
The atomic concentration Y1 that more it should be noted that the non-dissolubility phase 16b of first magnetosphere 16 more preferably is arranged in the 12 atom %-15 atom % scopes.When the atomic concentration Y1 of non-dissolubility phase 16b surpassed 15 atom %, the direction of growth of magnetic particle 16a was easy to from transfer to the direction that is parallel to substrate surface perpendicular to the direction of substrate surface.
The atomic concentration Y2 of the non-dissolubility phase 17b of second magnetosphere 17 preferably is arranged in the 5 atom %-15 atom % scopes, more preferably is arranged in the 9 atom %-13 atom % scopes.As the atomic concentration Y2 of non-dissolubility phase 17b during less than 5 atom %, magnetic particle 17a is easy to be bonded to each other, and magnetic particle 17a may can not get isolating fully.When the atomic concentration Y2 of non-dissolubility phase 17b surpassed 15 atom %, the atomic concentration Y2 of magnetic particle 17a may be reduced to and can cause the level that output reduces of reproducing.The atomic concentration Y2 of non-dissolubility phase 16b can be expressed as follows:
Y2=M Y2/ (M X2+ M Y2) * 100[atom %]
Wherein, M X2Representative constitutes the atomicity of the magnetic particle 17a of second magnetosphere 17, M Y2Representative constitutes the atomicity of the non-dissolubility phase 17b of second magnetosphere 17.
In addition, it should be noted that preferably it (is Y1＞Y2) that atomic concentration Y1 with the non-dissolubility phase 16b of first magnetosphere 16 is arranged to be higher than the atomic concentration Y2 of the non-dissolubility phase 17b of second magnetosphere 17.Like this, 16 places can fully isolate magnetic particle 16a at first magnetosphere, because the magnetic particle 17a of second magnetosphere 17 is formed on the surface of magnetic particle 16a of first magnetosphere 16 (from the superficial growth of the magnetic particle 16a of first magnetosphere 16), so magnetic particle 17a also can be isolated fully.In other words, even the atomic concentration Y2 of the non-dissolubility phase 17b of second magnetosphere 17 is arranged to be lower than the atomic concentration Y1 of the non-dissolubility phase 16b of first magnetosphere 16, magnetic particle 17a still can be isolated fully.
In addition, note that the saturation magnetic flux density of second magnetosphere 17 preferably is arranged to be higher than the saturation magnetic flux density of first magnetosphere 16.The residual magnetic flux density by calculating first magnetosphere 16 and second magnetosphere 17 respectively and the product of thickness also obtain the summation of described product, determine the playback output level of magnetic head.By the saturation magnetic flux density of second magnetosphere 17 being arranged to be higher than the saturation magnetic flux density of first magnetosphere 16, compare with the situation of first magnetosphere 16 and second magnetosphere 17 being arranged to have identical saturation magnetic flux density, the residual magnetic flux density of second magnetosphere 17 will be higher than the residual magnetic flux density of first magnetosphere 16.Thus, the thickness by making second magnetosphere 17 is corresponding to thin magnetosphere, the playback output level that can obtain to be scheduled to.Therefore, the gross thickness of recording layer 15 can be reduced, and distance can be reduced from the recording/playback element (not shown) of magnetic head to soft magnetic underlayer 12 surfaces.Thereby the space waste (spacing loss) that produces when reducing playback is to realize higher output.
The thickness of first magnetosphere 16 preferably is arranged in the scope of 1nm～4nm, more preferably is arranged in 2nm～3nm scope.The thickness of second magnetosphere 17 preferentially is arranged in 6nm～10nm scope, more preferably is arranged in 6～8nm scope.And first magnetosphere 16 preferentially is arranged to thinner than second magnetosphere 17.By this way, can guarantee to reproduce output, prevent that simultaneously the total film thickness of recording layer 15 from increasing.
For example, first magnetosphere 16 and second magnetosphere 17 can be arranged to: magnetic particle 16a and 17a are made by CoCrPt-M2, and non-dissolubility phase 16b and 17b are by SiO 2Make.In this example, the SiO of first magnetosphere 16 2The atomic concentration of non-dissolubility phase 16b preferably is arranged in 10～20 atom % scopes, the SiO of second magnetosphere 17 2The atomic concentration of non-dissolubility phase 17b preferably is arranged in 5～15 atom % scopes.In addition, the dosage rate (dosage rate) of the non-dissolubility phase 16b in first magnetosphere 16 is arranged to the dosage rate height than the non-dissolubility phase 17b in second magnetosphere 17.
With reference to figure 1, diaphragm 18 can be arranged to have the thickness in 0.5～15nm scope, and for example can be made of amorphous carbon, hydrocarbons, carbonitride or aluminium oxide.Notice that diaphragm 18 is not limited to the particular type of material.
Lubricant layer 19 can be arranged to have the thickness in 0.5～5nm scope, and for example can be formed by the lubricant that constitutes main chain with PFPE (perfluoropolyether).In a concrete example, will be used as lubricant by the PFPE that OH end group (end group) or benzene first end group finish.Notice that the material according to as diaphragm 18 can be provided with or omit lubricant layer 19.
Below with reference to the manufacture method of Fig. 1 description according to the perpendicular magnetic recording medium 10 of first embodiment.
At first, behind the surface of cleaning and dry substrate 11, for example, on substrate 11, form soft magnetic underlayer 12 by electroless plating, plating, sputter or vacuum moulding machine.
Then, on soft magnetic underlayer 12, use sputter equipment to form inculating crystal layer 13.In a concrete example, the sputtering target made from the nonmagnetic substance by inculating crystal layer 13 pointed out above carries out the sputter of DC magnetron, and the air pressure that Ar gas is set is 0.4 handkerchief, to form inculating crystal layer 13.Note, in the film deposition process, preferred heated substrates 11 not.Like this, can prevent the crystallization or the expansion of the microcrystal in the soft magnetic underlayer 12.What can select is substrate 11 to be heated to the temperature (for example, being less than or equal to 150 ℃ temperature) of the crystallization or the expansion that can not cause microcrystal in the soft magnetic underlayer 12.And, can be with the temperature below substrate 11 cool to room temperature, for example-100 ℃ (if there is not the cooling restriction in device, can be lower).Note, in the forming process of first magnetosphere 16 and second magnetosphere 17, can carry out similar substrate 11 heating and/or cooling procedures.And in a preferred embodiment, before carrying out the film deposition process, it is 10 that gas is discharged up to pressure from sputter equipment -7Handkerchief, and will be filled in the device as the atmosphere gas of Ar gas thereafter.
Then, on inculating crystal layer 13, use sputter equipment to form first bottom 14.In concrete example, use the sputtering target of making by aforesaid Ru or Ru-M1 alloy, in as the inert gas atmosphere of Ar gas atmosphere, carry out the sputter of DC magnetron, to form first bottom 14.Note, for example, can be by greater than 2nm/ second but be less than or equal to the sedimentation velocity of 8nm/ second and form first bottom 14, perhaps, for example, can form first bottom 14 more than or equal to 0.26 handkerchief but at pressure less than the inert gas of 2.6 handkerchiefs (more preferably in 0.26～1.33 handkerchief scope).By air pressure or sedimentation velocity are set to above-mentioned scope, can form first bottom 14, this first bottom 14 has by the polycrystalline structure as above-mentioned crystal grain 14a and crystal boundary 14b realization.Note, can also replace the sputter of DC magnetron to form first bottom 14 by the sputter of RF magnetron.
Then, with sputter equipment and use the sputtering target of making by hard magnetic material and nonmagnetic substance on first bottom 14, to form first magnetosphere 16 and second magnetosphere 17 successively.In a concrete example, the compound sputtering target that utilization is made by the hard magnetic material and the nonmagnetic substance of first magnetosphere 16, carry out the sputter of RF magnetron in the inert gas atmosphere under being set to 2.00～8.00 handkerchiefs (being preferably 2.00～3.99 handkerchiefs) air pressure, to form first magnetosphere 16.Then, utilize the compound sputtering target of making by the second magnetospheric hard magnetic material and nonmagnetic substance to carry out similar process, on first magnetosphere 16, to form second magnetosphere 17.Note, under the oxygen containing situation of nonmagnetic substance bag of first magnetosphere 16 and second magnetosphere 17, oxygen can be added in the inert gas; Comprise at nonmagnetic substance under the situation of nitrogen, nitrogen can be added in the inert gas.
The composition that is used to form the sputtering target of first magnetosphere 16 and second magnetosphere 17 can be arranged to basically the composition corresponding to first magnetosphere 16 and second magnetosphere 17 respectively.Yet, notice that according to the film formation condition, the composition of first magnetosphere 16 and second magnetosphere 17 can change a little from they corresponding sputtering target compositions.The assessment of carrying out according to the present inventor, atomic concentration Y1 and Y2 about non-dissolubility phase 16b and 17b, the composition that about 1 atom % can occur changes, and about they corresponding sputtering targets, first magnetosphere 16 that deposition forms and second magnetosphere 17 can have the non-dissolubility that reduces atomic concentration Y1 and the Y2 of 16b and 17b mutually.
Note, in another embodiment, the sputtering target that can make by hard magnetic material by the while sputter and form first magnetosphere 16 and second magnetosphere 17 by the sputtering target that nonmagnetic substance constitutes.
Then, for example by sputter, CVD or FCA (filtering cathode arc, Filtered CathodicArc), on second magnetosphere 17, form diaphragm 18.
Note,, preferably keep vacuum state or inert gas atmosphere, make the layer that forms have clean surface from forming inculating crystal layer 12 to the processing step that forms diaphragm 18.
Then, on the surface of diaphragm 18, form lubricant layer 19.For example, immerse or spin coating proceeding in, form lubricant layer 19 by the lubricant solution that applies dilution.Can form the perpendicular magnetic recording medium 10 of present embodiment like this.
According to present embodiment, on amorphous inculating crystal layer 13, form first bottom 14, thereby can cause the self-organization of first bottom 14, and can form the crystal grain 14a of size basically identical.Can arrange crystal grain 14a equably like this.And, owing on the magnetic particle 16a of first magnetosphere 16 and second magnetosphere 17 and the crystal grain 14a surface that magnetic particle 17a is grown in first bottom 14, therefore also can arrange magnetic particle 16a and magnetic particle 17a equably.Like this, can prevent the interaction between the magnetic particle 17a of the interaction between the magnetic particle 16a of first magnetosphere 16 and second magnetosphere 17, and can reduce the media noise of perpendicular magnetic recording medium 10, thereby can improve the S/N ratio.
And according to present embodiment, the crystal grain 14a of first bottom 14 is by Ru or have the hcp structure and comprise Ru and make as the Ru-M1 alloy of principal ingredient.By first bottom of being made by Ru or Ru-M1 alloy 14 is set, can realizes the excellent lattice compatibility with the magnetic particle 16a of first magnetosphere 16, and can improve the crystallinity of first magnetosphere 16 and second magnetosphere 17.Therefore, can improve the coercive force and the saturation magnetic flux density of first magnetosphere 16 and second magnetosphere 17.
In addition, because the atomic concentration of non-dissolubility phase (nonmagnetic substance) is set to than the height in second magnetosphere 17 in first magnetosphere 16, therefore can isolate the magnetic particle 16a of first magnetosphere 16 fully by non-dissolubility phase 16b.Specifically, in first magnetosphere 16, can prevent the combination of magnetic particle 16a by non-dissolubility phase 16b.In second magnetosphere 17, magnetic particle 17a is grown on the magnetic particle 16a of first magnetosphere 16, and therefore the magnetic particle 17a of second magnetosphere 17 also can be isolated from each other.Magnetic particle 17a by second magnetosphere 17 that is isolated from each other can prevent the interaction between the magnetic particle 17a, and can reduce the media noise of perpendicular magnetic recording medium.Should be understood that according to present embodiment from top description, can reduce noise, raising S/N ratio, the realization high density recording ability of perpendicular magnetic recording medium.
(second embodiment)
Next, description is according to the perpendicular magnetic recording medium 20 of second embodiment of the invention.The perpendicular magnetic recording medium 20 of present embodiment comprises second bottom 21 that is arranged between first bottom 14 and the recording layer 15.Notice that the further feature of the perpendicular magnetic recording medium 20 of second embodiment is identical with first embodiment.
Fig. 4 is the structural section figure of expression according to the perpendicular magnetic recording medium 20 of second embodiment of the invention.Fig. 5 is the more detailed structure view of expression perpendicular magnetic recording medium 20 shown in Figure 4.Attention is in Fig. 4 and Fig. 5, and the parts identical with the described parts of first embodiment are endowed identical label, and have omitted their description.
With reference to figure 4 and Fig. 5, the perpendicular magnetic recording medium 20 of present embodiment comprises substrate 11, on this substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 15, diaphragm 18 and lubricant layer 19.Recording layer 15 comprises first magnetosphere 16 and second magnetosphere 17.
The gap 21b that second bottom 21 comprises a plurality of crystal grain 21a and crystal grain 21a is isolated from each other.Hole part 21b is corresponding to low especially that part of of the density of material that constitutes second bottom 21.Can think that the atmosphere gas that uses is filled among the 21b of this gap in the film forming process.Crystal grain 21a is in the crystal grain 14a surface growth that is substantially perpendicular on the direction of substrate surface from first bottom 14, and be arranged to towards with the column structure of the interface extension of first magnetosphere 16.Notice that each crystal grain 21a can be made of one or more monocrystal.
Second bottom 21 is arranged to thickness in 2～16nm scope, and is made by Ru or Ru-M1 alloy (M1 corresponding among Elements C o, Cr, Fe, Ni and the Mn at least a), and this Ru-M1 alloy has the hcp structure and comprises Ru as principal ingredient.Notice that when second bottom 21 was thinner than 2nm, its crystallinity reduced, and when second bottom 21 is thicker than 16nm, its crystal orientation may reduce, and the defective as bluring that can occur during record.Second bottom 21 preferably is arranged to thickness in 3～16 nanometer range, so that cause the isolation of crystal grain 21a, more preferably is arranged to thickness in 3～10 nanometer range, to prevent the space waste.
Material by will having the hcp structure such as Ru or Ru-M1 alloy are used for second bottom 21, if the magnetic particle 16a of first magnetosphere 16 has the hcp structure, then the easy magnetizing axis of magnetic particle 16a can be oriented in respect on the vertical substantially direction of substrate surface.In addition, notice that in order to realize good crystal growth, preferred second bottom 21 is made by Ru.
As shown in Figure 5, in second bottom 21, gap 21b is arranged to around crystal grain 21a.Gap 21b can be arranged to have essentially identical width to interface with first magnetosphere 16 from the basal surface of crystal grain 21a.In the another one example, the gap can be arranged in towards with the direction at the interface of first magnetosphere 16 on broadening.The evaluation of carrying out according to the inventor, when the perpendicular magnetic recording medium 20 of present embodiment is made according to following manufacture method, can observe from the TEM image in the cross section of the perpendicular magnetic recording medium 20 made, compare the often bigger space of formation with zone around the latter half of crystal grain 21a around the zone of crystal grain 21a the first half.By second bottom 21 is set, the magnetic particle 16a of first magnetosphere 16 that forms on crystal grain 21a surface can be isolated from each other aptly.And, with respect to first embodiment, the crystallinity of the magnetic particle 16a of first magnetosphere 16 in the perpendicular magnetic recording medium 20 of present embodiment can be improved, and the good crystallinity that realizes among the magnetic particle 16a of first magnetosphere 16 can be extended to the magnetic particle 17a of second magnetosphere 17.Like this, relative first embodiment can further improve according to the S/N ratio of the perpendicular magnetic recording medium 20 of present embodiment.
The formation method of second bottom 21 then, is described.Notice that the method for the method of formation perpendicular magnetic recording medium 20 other layers and formation perpendicular magnetic recording medium 10 each layers of above-mentioned first embodiment is same, has therefore omitted description of them.
On first bottom 14, use sputter equipment to use the sputtering target of making by above-mentioned Ru or Ru-M1 alloy and form second bottom 21.In concrete example,, can in inert gas atmosphere, form second bottom 21 by carrying out the sputter of DC magnetron as Ar gas atmosphere with 0.1～2nm/ sedimentation velocity of second, under 2.66～26.6 handkerchief air pressure.By sedimentation velocity and air pressure being arranged in the above-mentioned scope, can forming second bottom 21 with above-mentioned crystal grain 21a and gap 21b.
Note,, make efficient and significantly reduce when sedimentation velocity is lower than 0.1nm/ during second, and if sedimentation velocity is higher than 2nm/ second, can not form gap 21b and make the formed layer can be corresponding to the continuous sequence of crystal grain and grain boundary portion.And, note, when inert gas pressure is lower than 2.66 handkerchiefs, can not form gap 21b and make the formed layer can be corresponding to the continuous sequence of crystal grain and grain boundary portion, and when inert gas pressure was higher than 26.6Pa, inert gas can enter crystal grain, and the crystallinity of crystal grain can reduce.In addition, when forming second bottom, preferred heated substrates 11 not is so that prevent the crystallization and the expansion of microcrystal in the soft magnetic underlayer 12.
Notice that the advantageous effects of the perpendicular magnetic recording medium 10 of first embodiment can realize similarly in the perpendicular magnetic recording medium 20 of present embodiment.Second bottom 21 that perpendicular magnetic recording medium 20 in the present embodiment is included between first bottom 14 and first magnetosphere 16, formed by crystal grain 21a and gap 21b.By gap 21b crystal grain 21a is isolated from each other, makes the magnetic particle 16a that is grown in lip-deep first magnetosphere 16 of crystal grain 21a also can be isolated from each other.Therefore, the magnetic particle 17a that is grown in lip-deep second magnetosphere 17 of magnetic particle 16a of first magnetosphere 16 also can be isolated from each other.By second bottom 21 is set, can improves the crystallinity of the magnetic particle 16a of first magnetosphere 16, and the crystallinity that improves can be extended to the magnetic particle 17a of second magnetosphere 17.Therefore, with respect to the perpendicular magnetic recording medium 10 of first embodiment, can further reduce the media noise of perpendicular magnetic recording medium 20.Like this, the S/N of perpendicular magnetic recording medium ratio can further improve.
(the 3rd embodiment)
Next, description is according to the perpendicular magnetic recording medium 30 of third embodiment of the invention.The perpendicular magnetic recording medium 30 of present embodiment comprises recording layer 35, and recording layer 35 comprises first to the n magnetosphere.Noting, is identical according to the further feature of the perpendicular magnetic recording medium 30 of present embodiment with the perpendicular magnetic recording medium 10 of first embodiment substantially.
Fig. 6 is the structural section figure of expression according to the perpendicular magnetic recording medium 30 of the 3rd embodiment.In this width of cloth figure, the parts identical with the parts of above-mentioned first embodiment are endowed identical label, and have omitted description of them.
With reference to figure 6, perpendicular magnetic recording medium 30 comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 35, diaphragm 18 and lubricant layer 19 on substrate 11.Recording layer 35 comprises first magnetosphere 35 that stacks gradually 1, second magnetosphere 35 2..., n-1 magnetosphere 35 N-1With n magnetosphere 35 nIn this example, n is corresponding to more than or equal to 3 integer.
First magnetosphere 35 1To n magnetosphere 35 nCan be by any the making in the material of above-mentioned first magnetosphere 16 and two magnetospheres 17.First magnetosphere 35 is set 1To n-1 magnetosphere 35 N-1, make the atomic concentration of their corresponding non-dissolubility phases be set to respectively than second magnetosphere 35 2To n magnetosphere 35 nHeight, and directly be deposited on above-mentioned magnetospheric above.In other words, first magnetosphere 35 1To n magnetosphere 35 nThe atomic concentration of non-dissolubility phase be arranged in from first magnetosphere 35 1To n magnetosphere 35 nDirection on reduce.For example, as described in first embodiment, first magnetosphere 35 1The atomic concentration Y1 of non-dissolubility phase be set to than second magnetosphere 35 2The atomic concentration Y2 height of non-dissolubility phase.The atomic concentration of supposing the magnetospheric non-dissolubility phase of k is expressed as Yk (k=1～n), then first magnetosphere 35 1To n magnetosphere 35 nThe atomic concentration Y1～Yn of each non-dissolubility phase be arranged to Y1＞Y2＞...＞Yn.By first magnetosphere 35 is set by this way 1To n magnetosphere 35 nThe atomic concentration of non-dissolubility phase, from first magnetosphere 35 1To n magnetosphere 35 nEach layer in magnetic particle can be isolated from each other effectively, and compare with the recording layer 15 of the perpendicular magnetic recording medium 10 of first embodiment, can increase the total atom concentration of magnetic particles in the recording layer 35.Therefore, on the one hand, compare with the perpendicular magnetic recording medium 10 of first embodiment, the reproduction output of perpendicular magnetic recording medium 30 can increase, and can keep (just not increasing) media noise at least, thereby can further improve the S/N ratio.On the other hand, can reduce the thickness of recording layer 35, keep perpendicular magnetic recording medium 30 simultaneously and reproducing output.
Notice that the thickness of recording layer 35 is promptly from first magnetosphere 35 1To n magnetosphere 35 nWhole thickness preferably is arranged in 9～16nm scope.
Then, the method for making recording layer 35 is described.Notice that the method for formation perpendicular magnetic recording medium 30 each layer except that recording layer 35 is the same with the method for each layer of the perpendicular magnetic recording medium 10 of above-mentioned formation first embodiment.According to an example, can utilize sputtering target to form recording layer 35 with the similar mode of first embodiment, described sputtering target has corresponding to first magnetosphere 35 1To n magnetosphere 35 nThe composition of each composition.In other example, the sputtering target that can use the sputtering target made by hard magnetic material and nonmagnetic substance to make, and can control the sputter energy of a charge (charge powers) of each sputtering target aptly, to form first magnetosphere 35 1To n magnetosphere 35 nEach the layer.
Note, can realize the advantageous effects of the perpendicular magnetic recording medium 10 of first embodiment in the perpendicular magnetic recording medium 30 in the present embodiment similarly.In addition, aspect of present embodiment, in perpendicular magnetic recording medium 30, reproduce output and can improve, and can keep media noise at least, thereby the S/N ratio can further improve.In the other one side of present embodiment, can reduce the thickness of recording layer 35, keep simultaneously and reproduce output, thereby can reduce so-called magnetic space (that is to say the distance between the recoding/reproduction element of soft magnetic underlayer 12 and magnetic head).Like this, in the perpendicular magnetic recording medium 30 of present embodiment, the S/N ratio can further improve, and can prevent to blur.
(the 4th embodiment)
Next, description is according to the perpendicular magnetic recording medium 40 of fourth embodiment of the invention.Have substantially and the structure identical according to the perpendicular magnetic recording medium 40 of present embodiment according to the perpendicular magnetic recording medium 30 of the 3rd embodiment; Yet the perpendicular magnetic recording medium 40 of present embodiment comprises second bottom 21 between first bottom 14 and recording layer 35.In other words, the assemblage characteristic that has above-mentioned second embodiment and the 3rd embodiment according to the perpendicular magnetic recording medium 40 of present embodiment.
Fig. 7 is the structural section figure of expression according to the perpendicular magnetic recording medium of the 4th embodiment.In this width of cloth figure, the parts identical with first embodiment to the, three embodiment are endowed identical label, and have omitted their description.
With reference to figure 7, perpendicular magnetic recording medium 40 comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 35, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 35 comprises first magnetosphere 35 that stacks gradually 1, second magnetosphere 35 2..., n-1 magnetosphere 35 N-1With n magnetosphere 35 nIn this example, n is corresponding to the integer that is greater than or equal to 3.
By second bottom 21 is set, can further improve the magnetosphere 35 that constitutes recording layer 35 in perpendicular magnetic recording medium 40 1～35 nThe crystallinity of magnetic particle.In addition, by second bottom 21 is set, can make first magnetosphere 35 1Magnetic particle fully isolate each other.Like this, this arrangement of magnetic particle can be passed to second magnetosphere 35 2, and then upwards be delivered to n magnetosphere 35 always nTherefore, in the perpendicular magnetic recording medium 40 of present embodiment, can realize the combination of the advantageous effects of above-mentioned second embodiment and the 3rd embodiment.By this way, in the perpendicular magnetic recording medium 40 of present embodiment, can further improve the S/N ratio.
(the 5th embodiment)
Next, the perpendicular magnetic recording medium 50 of fifth embodiment of the invention is described.Perpendicular magnetic recording medium 50 according to present embodiment comprises the recording layer 55 of regulating film corresponding to composition.Noting, is the same according to the further feature of the perpendicular magnetic recording medium of originally executing example with feature according to the perpendicular magnetic recording medium 10 of first embodiment.
Fig. 8 is the structural section figure of expression according to the perpendicular magnetic recording medium 50 of the 5th embodiment.In this width of cloth figure, the parts identical with above-mentioned first embodiment are endowed identical label, and have omitted description of them.
With reference to figure 8, perpendicular magnetic recording medium 50 comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 55, diaphragm 18 and lubricant layer 19 on this substrate 11.
Recording layer 55 can be made by any magnetic material of the first above-mentioned magnetosphere 16 and second magnetosphere 17; and regulate film corresponding to so-called composition; regulate in the film at this composition, the atomic concentration of the non-dissolubility phase in the recording layer 55 reduces on from first bottom 14 to the direction of diaphragm 18 gradually.In other words, in recording layer 55, can be set to relative higherly with the atomic concentration of the non-dissolubility phase at the interface of first bottom 14, towards the direction of diaphragm 18, along with layer advances, the atomic concentration of non-dissolubility phase reduces gradually.By setting recording layer 55 by this way, with first bottom 14 at the interface, the magnetic particle of recording layer 55 can be isolated from each other.According to present embodiment, from the interface of first bottom 14 towards diaphragm 18, along with the propelling of layer, the particle diameter of each magnetic particle of recording layer 55 is set to increase gradually.In this case, because magnetic particle is isolated from each other in its bottom, therefore can prevent the combination of magnetic particle effectively at the whole film thickness direction of recording layer 55.Like this, the magnetic particle of recording layer 55 can be isolated from each other.And () volume ratio changes continuously in other words, nonmagnetic substance, therefore compares with first embodiment, and the atomic concentration of magnetic particle can increase in the recording layer owing to non-dissolubility phases in the recording layer 55.Therefore, aspect of present embodiment, in perpendicular magnetic recording medium 50, can increase and reproduce output, and can keep media noise at least, thereby can further improve the S/N ratio.According to present embodiment on the other hand, in perpendicular magnetic recording medium 50, can reduce the thickness of recording layer 55, keep simultaneously and reproduce output.
Recording layer 55 preferably is set; make near with its composition of interface zone place of first bottom 14 comprise atomic concentration be 10～20 atom % non-dissolubility mutually, and near with its composition of interface zone place of diaphragm 18 comprise atomic concentration be 5～15 atom % non-dissolubility mutually.Note, can be provided be positioned near with the composition of the recording layer 55 at the interface zone place of first bottom 14, make the atomic concentration of non-dissolubility phase be set to be higher than atomic concentration according to non-dissolubility phase in first magnetosphere 16 of the perpendicular magnetic recording medium 10 of first embodiment.And, can be arranged near with the composition of the interface zone place recording layer 55 of diaphragm 18, make the atomic concentration of non-dissolubility phase be set to be lower than atomic concentration according to the non-dissolubility phase in second magnetosphere 21 of the perpendicular magnetic recording medium 10 of first embodiment.By recording layer 55 is set by this way, can prevent the combination of the magnetic particle of recording layer 55, keep simultaneously and reproduce output.According to other one side, as description, can reduce the thickness of recording layer 55 about the 4th embodiment, keep simultaneously and reproduce output.
Next, the formation method of recording layer 55 is described.Notice that the method that forms perpendicular magnetic recording medium 50 other layers is identical with the method for perpendicular magnetic recording medium 10 each layers of above-mentioned formation first embodiment.
The sputtering target that use is made by the hard magnetic material that is used for magnetic particle with form recording layer 55 by being used for the sputtering target that non-dissolubility nonmagnetic substance mutually makes, and control the sputter energy of a charge of each sputtering target.In a concrete example; the sputter energy of a charge that is used for the sputtering target that hard magnetic material makes can be fixed; from with the interface of first bottom 14 towards with the interface direction of diaphragm 18, along with the propelling of layer, the sputter energy of a charge of the sputtering target that nonmagnetic substance is made can reduce gradually.
Note, in perpendicular magnetic recording medium 50, can realize the advantageous effects of first embodiment similarly according to present embodiment.In addition, in the one side of present embodiment, in perpendicular magnetic recording medium 50, can increase and reproduce output, and can keep media noise at least, thereby can further improve the S/N ratio.Other one side at present embodiment, can reduce the thickness of recording layer 55, keep the reproduction output in the perpendicular magnetic recording medium 50 simultaneously, make to reduce so-called magnetic space (that is to say the distance between the recoding/reproduction element of soft magnetic underlayer 12 and magnetic head).By this way, in perpendicular magnetic recording medium 50, can improve the S/N ratio, and can prevent to blur.
(the 6th embodiment)
Next, the perpendicular magnetic recording medium 58 of the sixth embodiment of the present invention is described.The perpendicular magnetic recording medium 58 of present embodiment has the structure identical substantially with the perpendicular magnetic recording medium 50 of the 5th embodiment; Yet the perpendicular magnetic recording medium 58 of present embodiment comprises second bottom 21 between first bottom 14 and recording layer 55.In other words, the perpendicular magnetic recording medium of present embodiment has the assemblage characteristic of second embodiment and the 5th embodiment.
Fig. 9 is the structural section figure of expression according to the perpendicular magnetic recording medium 58 of the 6th embodiment.In this width of cloth figure, be endowed identical label with the described components identical of first to the 5th embodiment, and omitted their description.
With reference to figure 9, perpendicular magnetic recording medium 58 comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 55, diaphragm 18 and lubricant layer 19 on this substrate 11.Notice that recording layer 55 is corresponding to regulating film about the described composition of the 5th embodiment.
By second bottom 21 is set, can further improve the crystallinity of the magnetic particle of recording layer 55 in perpendicular magnetic recording medium 58.In other words, in the perpendicular magnetic recording medium 58 of present embodiment, can realize the combination of the advantageous effects of above-mentioned second embodiment and the 5th embodiment.By this way, in the perpendicular magnetic recording medium 58 of present embodiment, can further improve the S/N ratio.
(the 7th embodiment)
Figure 10 is the sectional view of expression according to the perpendicular magnetic recording medium structure of seventh embodiment of the invention; Figure 11 is the detailed structure view of expression perpendicular magnetic recording medium shown in Figure 10; And Figure 12 is the sectional view of the line B-B intercepting in Figure 11.It should be noted that in these figure to be endowed identical label, and omitted description of them with the previous corresponding parts of the described parts of embodiment.
With reference to figures 10 to Figure 12, the perpendicular magnetic recording medium 60 of the 7th embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 61, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 61 comprises first magnetosphere 16 and second magnetosphere 62 that stacks gradually from first bottom, 14 1 sides.It should be noted that except second magnetosphere 62 is made by the metal hard magnetic material perpendicular magnetic recording medium 60 has the perpendicular magnetic recording medium 10 similar structures with first embodiment.Be that the material of perpendicular magnetic recording medium 60 other layers of present embodiment and thickness can be selected in the scope of the material of the perpendicular magnetic recording medium 10 of realizing first embodiment and thickness.
Second magnetosphere 62 is by making corresponding to a kind of hard magnetic material in Ni, Fe, Co, Ni alloy, Fe alloy, CoCr, CoPt or the CoCr alloy.For example, the CoCr alloy comprises CoCrTa, CoCrPt and CoCr Pt-M2.At this, M2 can select from the set that element B, Mo, Nb, Ta, W, Cu and alloy thereof constitute.Second magnetosphere 62 has the easy magnetizing axis that is substantially perpendicular to substrate surface.
The saturation magnetic flux density of second magnetosphere 62 is arranged to be higher than the saturation magnetic flux density of first magnetosphere 16.The playback output level that it should be noted that magnetic head is proportional with the sum of products of the residual magnetic flux density of the product of the residual magnetic flux density of first magnetosphere 16 and thickness and second magnetosphere 62 and thickness basically.By the saturation magnetic flux density of second magnetosphere 17 being arranged to be higher than the saturation magnetic flux density of first magnetosphere 16, be arranged to have the situation of identical saturation magnetic flux density with first magnetosphere 16 and second magnetosphere 17 and compare, the residual magnetic flux density of second magnetosphere 17 is higher than the residual magnetic flux density of first magnetosphere 16.Thus, compare,, therefore can obtain required playback output level by second magnetosphere 62 is set because the gross thickness of recording layer 61 reduces with the situation that first magnetosphere 16 only is set.Therefore, can reduce distance, and can reduce the space waste that produces when reproducing, to realize higher output from the recording/playback element (not shown) of magnetic head to soft magnetic underlayer 12 surfaces.Simultaneously, when record, can avoid fuzzy.In an instantiation, the saturation magnetic flux density of first magnetosphere 16 can be 200-300emu/cm 3, and the saturation magnetic flux density of second magnetosphere 62 can be 400-600emu/cm 3Thereby, make the saturation magnetic flux density of second magnetosphere 62 be approximately the twice of the saturation magnetic flux density of first magnetosphere 16, to realize reducing of essence thickness.
In addition, the hard magnetic material that it should be noted that second magnetosphere 62 preferably is set to the hard magnetic material with the first magnetospheric magnetic particle 16a same type.In this way, the magnetic particle 62a that helps second magnetosphere 62 carries out epitaxial growth from the magnetic particle 16a of first magnetosphere 16, and can improve crystal structure and the crystal orientation of the magnetic particle 62a of second magnetosphere 62.Next, the typical combination of same type of material is described.
For example, under the situation of hard magnetic material corresponding to Ni or Ni alloy of the magnetic particle 16a of first magnetosphere 16, second magnetosphere 62 is preferably made by Ni or Ni alloy.Under the situation of hard magnetic material corresponding to Fe or Fe alloy of the magnetic particle 16a of first magnetosphere 16, second magnetosphere 62 is preferably made by Fe or Fe alloy.
In addition, corresponding to having the hcp structure and comprising under the situation of Co as the hard magnetic material of principal ingredient, the hard magnetic material of second magnetosphere 62 is preferably corresponding to having the hcp structure and comprising the hard magnetic material of Co as principal ingredient at the hard magnetic material of the magnetic particle 16a of first magnetosphere 16.It should be noted that and comprise that Co is meant that as the hard magnetic material of principal ingredient Co content is at least the hard magnetic material of 50 atom %.Under the situation of hard magnetic material corresponding to CoCr, CoPt or CoCr alloy of the magnetic particle 16a of first magnetosphere 16, the hard magnetic material of second magnetosphere 62 is preferably corresponding to CoCr, CoPt or CoCr alloy.More specifically, the hard magnetic material of second magnetosphere 62 can be corresponding to for example as CoCrTa, CoCrPt or the CoCrPt-M2 of CoCr alloy.At this, M2 can select from the set of element B, Mo, Nb, Ta, W, Cu and alloy thereof.
As shown in figure 11, the magnetic particle 62a of second magnetosphere 62 covers the surface of magnetic particle 16a thus from the surface growth of the magnetic particle 16a of first magnetosphere 16.Because the magnetic particle 16a of first magnetosphere 16 is evenly distributed and be isolated from each other along the direction that is parallel to substrate surface, therefore the magnetic particle 62a of second magnetosphere 62 also can be evenly distributed along the direction that is parallel to substrate surface.Particularly, the size of the magnetic particle 62a of second magnetosphere 62 can be arranged to unanimity.Thereby, can reduce media noise, thereby can reduce the total media noise of recording layer 61 from second magnetosphere 62.What need pay special attention to is in a preferred embodiment, and the magnetic particle 62a of second magnetosphere 62 corresponds on the surface of magnetic particle 16a that benchmark is formed on first magnetosphere 16 one by one.
Shown in Figure 11 and 12, in second magnetosphere 62, on some interfaces between the adjacent magnetic particle 62a, be preferably formed gap 62b.For example it should be noted that gap 62b has the effect that reduces or eliminate the magnetic interaction between the magnetic particle 62.
In addition, it should be noted that the magnetic particle 16a by first magnetosphere 16 arranges the magnetic particle 62a arrangement that determines second magnetosphere 62.Second magnetosphere 62 by situation about making as the CoCr alloy of CoCrPt or CoCrPt-M2 under, second magnetosphere 62 is formed on the suitable bottom as the Ta film, thereby makes the core of magnetic particle have hard magnetic (so-called Cr spacer particle interfacial structure) when non magnetic particle interface is formed on around it.Yet in the 7th embodiment, because second magnetosphere 62 is formed on first magnetosphere 16, therefore the magnetic particle 62a of second magnetosphere 62 arranges according to the magnetic particle 16a of first magnetosphere 16, thereby magnetic particle 62 can be separated from one another.Therefore, Cr spacer particle interfacial structure not necessarily must realize at second magnetosphere 62.It should be noted that when using the CoCrPt material, isolate, added the Cr of high-load for the ease of producing Cr.Yet,,, can reduce the Cr amount of adding compared to traditional Cr amount for second magnetosphere 62.For example, under the situation of hard magnetic material corresponding to CoCrPt or CoCrPt-M2 of second magnetosphere 62, the Cr content of described material is preferably in 5-20 atom % scope.
And, it should be noted that second magnetosphere 62 preferably made rather than CoCrPt-M2 by CoCrPt.Particularly, because doped chemical M2 is corresponding to nonmagnetic elements, therefore the saturation magnetic flux density of second magnetosphere 62 is higher when not comprising this doped chemical M2, and can increase the residual magnetic flux density of second magnetosphere 62 by this way.Thereby, can reduce the thickness of second magnetosphere 62, reduce the thickness of first magnetosphere 16 simultaneously, thereby reduce the total film thickness of recording layer 61.Therefore, the space waste in the time of can further reducing playback, and can realize high playback output.Simultaneously, can prevent to blur during record.In addition, should note, be set under the situation of room temperature at deposition second magnetosphere 62 time substrate temperatures, doped chemical M2 may hinder the crystallization of CoCrPt, therefore when doped chemical M2 does not mix in the material of second magnetosphere 62, the crystal structure of second magnetosphere 62 can obtain to improve, and therefore, exports from the high playback that this respect also can obtain the perpendicular magnetic recording medium 60.
In addition, under the situation of hard magnetic material corresponding to CoCrPt or CoCrPt-M2 of second magnetosphere 62, the Pt content of described material is set at the degree that makes vertical coercive force enough low, preferably in 5-10 atom % scope.
The thickness of second magnetosphere 62 preferably is arranged in the 6-10nm scope, more preferably in the 6-8nm scope.The thickness of first magnetosphere 16 preferably is arranged in the 1-4nm scope, more preferably in the 2-3nm scope.
In addition, it should be noted that the thickness of second magnetosphere 62 preferably is arranged to be equal to or less than the thickness of first magnetosphere 16.In this way, can realize reducing of recording layer 61 total film thicknesses simultaneously, first magnetosphere 16 forms granular structure, and high the reproduction exported.And in a preferred embodiment, in order to obtain good S/N ratio, the ratio (t1/t2) of the thickness t2 of the thickness t1 of first magnetosphere 16 and second magnetosphere 62 is preferably in the 1-2 scope.It should be noted that ratio t1/t2 less than 1 situation under, S/N reduces than under high frequency; And when ratio t1/t2 greater than 2 the time, S/N is than reducing under low frequency.In addition, the summation of the thickness of the thickness of first magnetosphere 16 and second magnetosphere 62 preferably is no more than 20nm.
It should be noted that second magnetosphere 62 is not limited to single layer structure; Promptly second magnetosphere 62 also can be the stepped construction of for example being made up of multilayer.In the case, form these layers of stepped construction and can be made by the identical element compound of the similar hard magnetic material of realization with different elemental composition ratios, perhaps these layers also can be made by different element compounds.Be that these layers can be selected from any available hard magnetic material of above-mentioned second magnetosphere 62.
According to present embodiment, perpendicular magnetic recording medium 60 comprises recording layer 61, and this recording layer 61 is by realizing having on first magnetosphere 16 of granular structure second magnetosphere 62 that deposition made by the metal hard magnetic material.About the description of first embodiment, the magnetic particle 16a of first magnetosphere 16 is evenly distributed as mentioned.Because the magnetic particle 62a of second magnetosphere 62 is formed on the magnetic particle 16a surface of first magnetosphere 16, so evenly distributed second magnetosphere 62 that is passed to of the magnetic particle 16a of first magnetosphere 16.In this way, the magnetic particle 62a of second magnetosphere 62 also can be evenly distributed.Can reduce media noise thus.And, because the saturation magnetic flux density of second magnetosphere 62 is arranged to be higher than the saturation magnetic flux density of first magnetosphere 16, therefore can reduce the total film thickness of recording layer 61, and, therefore in perpendicular magnetic recording medium 60, can obtain high playback output because the saturation magnetic flux density of the layer of close magnetic head is higher.Thus, in perpendicular magnetic recording medium 60, can realize that not only high reproduction output also can realize good S/N ratio.
Next, the manufacture method of the perpendicular magnetic recording medium 60 of the 7th embodiment is described with reference to Figure 10.
It should be noted that from clean substrate to the processing step that forms first magnetosphere 16, carry out in the mode identical with the corresponding processing step of perpendicular magnetic recording medium 10 manufacture methods of above-mentioned first embodiment.
(is 0.4Pa as setting air pressure) uses the sputtering target of being made by the hard magnetic material of second magnetosphere 62 to carry out the sputter of DC magnetron in the inert gas atmosphere as Ar gas atmosphere, forms second magnetosphere 62.
Then, form diaphragm 18 and lubricant layer 19 in the similar mode of processing step with perpendicular magnetic recording medium 10 manufacture methods of first embodiment.In this way, can produce the perpendicular magnetic recording medium 60 of the 7th embodiment.
Should note in this manufacture method, during formation soft magnetic underlayer 12 arrives the technology that forms second magnetosphere 62, substrate be carried out heat treated.By this way, the crystallization of the non-crystalline material of soft magnetic underlayer 12 can be prevented, and the granular structure of first magnetosphere 16 can be formed exactly.Therefore, when forming second magnetosphere 62, substrate temperature is near room temperature.In the case, for instance, if the hard magnetic material of second magnetosphere 62 corresponding to the CoCr alloy, then is difficult to realize the Cr isolation structure in the magnetic particle 62a of second magnetosphere 62.Particularly, the composition of the hard magnetic material by second magnetosphere 62 forms the structure of basically identical in the magnetic particle 62a of second magnetosphere 62.In the case, help the design of the hard magnetic material of second magnetosphere 62.In addition, the chamber of heated substrates is optional, thereby equipment cost and manufacturing cost are descended, and the put area of sputter equipment also reduces.
In addition, as mentioned above, the magnetic particle 62a of second magnetosphere 62 can be isolated from each other according to the arrangement of first magnetosphere 16, can reduce media noise thus and improve the S/N ratio in second magnetosphere 62.
(the 8th embodiment)
Comprise second magnetosphere except identical with the 7th embodiment, according to the perpendicular magnetic recording medium of eighth embodiment of the invention with basic identical according to the perpendicular magnetic recording medium of second embodiment.
Figure 13 is the sectional view of expression according to the perpendicular magnetic recording medium structure of eighth embodiment of the invention; Figure 14 represents the detailed structure view of perpendicular magnetic recording medium shown in Figure 13.Should notice that in these figure the parts identical with the described parts of the foregoing description are endowed identical label, and omit description of them.
With reference to Figure 13 and 14, the perpendicular magnetic recording medium 65 of present embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 61, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 61 comprises first magnetosphere 16 and second magnetosphere 62 that stacks gradually from second bottom, 21 1 sides.It should be noted that the perpendicular magnetic recording medium 20 of the perpendicular magnetic recording medium 65 and second embodiment has similar structure except second magnetosphere 62 is made by the metal hard magnetic material.Be that the material of other layer of perpendicular magnetic recording medium 65 of present embodiment and thickness can be selected in the material of the perpendicular magnetic recording medium 20 of realizing second embodiment and thickness scope.
As mentioned in conjunction with described in the Figure 4 and 5 that second embodiment is shown, second bottom 21 comprises a plurality of crystal grain 21a, described crystal grain 21a is by Ru or have the hcp structure and make as the Ru-M1 alloy (M1 is corresponding at least a element among Elements C o, Cr, Fe, Ni and the Mn) of principal ingredient with Ru, and described crystal grain 21a is surrounded its gap 21b that is isolated from each other.Crystal grain 21a can fully isolate the magnetic particle 16a of first magnetosphere 16 each other.And, by second bottom 21 is set, can improve the crystal structure of the magnetic particle 16a of first magnetosphere 16.Thereby as shown in figure 14, the spacing between the magnetic particle 62a of second magnetosphere 62 can homogenising.Therefore, the media noise that can reduce perpendicular magnetic recording medium 65 also can improve its S/N ratio.In addition, between the magnetic particle 62a of second magnetosphere 62, can be formed uniformly gap 62b.In this way, can reduce interactional quantitative range or variation between the magnetic particle 62a of second magnetosphere 62, thereby in perpendicular magnetic recording medium 65, can reduce media noise and improve the S/N ratio.
Should note, the corresponding processing step that comprises the manufacture method of the perpendicular magnetic recording medium 20 by carrying out second embodiment according to the manufacture method of the perpendicular magnetic recording medium 65 of the 8th embodiment forms second bottom 21, and forms remainder layer by the corresponding processing step of carrying out according to the manufacture method of the perpendicular magnetic recording medium 60 of the 7th embodiment.
(the 9th embodiment)
Perpendicular magnetic recording medium 70 according to ninth embodiment of the invention comprises recording layer 71, and this recording layer 71 is realized by being provided with on the n magnetosphere according to the recording layer 35 of the perpendicular magnetic recording medium 30 of the 3rd embodiment according to second magnetosphere 62 of the perpendicular magnetic recording medium 60 of the 7th embodiment.
Figure 15 is the sectional view of expression according to the perpendicular magnetic recording medium structure of ninth embodiment of the invention.Should notice that parts identical with the described parts of the foregoing description in Figure 15 are endowed identical label, and omit their description.
With reference to Figure 15, the perpendicular magnetic recording medium 70 of present embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 71, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 71 comprises first magnetosphere 35 that stacks gradually from first bottom, 14 1 sides 1, second magnetosphere 35 2..., n-1 magnetosphere 35 N-1, n magnetosphere 35 nWith metal magnetic layer 72.At this, n is corresponding to the integer that is greater than or equal to 3.It should be noted that except comprising and be arranged on n magnetosphere 35 nOn the metal magnetic layer of making by the metal hard magnetic material 72 outside, the perpendicular magnetic recording medium 30 of perpendicular magnetic recording medium 70 and the 3rd embodiment has similar structure.Be that the material of other layer of perpendicular magnetic recording medium 70 of present embodiment and thickness can be selected in the material of the perpendicular magnetic recording medium 30 of realizing the 3rd embodiment and thickness scope.
The material of metal magnetic layer 72 and thickness can be selected in the above-mentioned Available Material of second magnetosphere 62 of the perpendicular magnetic recording medium 60 of realizing the 7th embodiment as shown in figure 10 and thickness scope.In addition, as mentioned about the description of the 3rd embodiment, first magnetosphere 35 1To n magnetosphere 35 nAll be arranged to granular structure.First magnetosphere 35 1To n-1 magnetosphere 35 N-1The atomic concentration of being arranged to its corresponding non-dissolubility phase is higher than second magnetosphere 35 that directly is deposited on the above-mentioned magnetosphere top respectively 2To n magnetosphere 35 nThe atomic concentration of non-dissolubility phase.In addition, because metal magnetic layer 72 is formed on n magnetosphere 35 nOn, therefore the atomic concentration of magnetic particle can be improved, and the playback output level can be improved.
In addition, because first magnetosphere 35 1To n-1 magnetosphere 35 N-1Magnetic particle be arranged to be isolated from each other, therefore can improve the homogeneity that the magnetic particle of metal magnetic layer is arranged.In this way, in perpendicular magnetic recording medium 70, can reduce media noise and raising S/N ratio.
It should be noted that according to the manufacture method of the perpendicular magnetic recording medium 65 of the manufacture method of the perpendicular magnetic recording medium 70 of the 9th embodiment and the 8th embodiment basic identically, and omitted its description.
(the tenth embodiment)
According to the perpendicular magnetic recording medium 75 of tenth embodiment of the invention, by being arranged on n magnetosphere 35 according to second magnetosphere 62 of the perpendicular magnetic recording medium 60 of the 7th embodiment according to the perpendicular magnetic recording medium 40 of the 4th embodiment nLast realization.
Figure 16 is the sectional view of expression according to the perpendicular magnetic recording medium structure of tenth embodiment of the invention.With reference to Figure 16, the perpendicular magnetic recording medium 75 of present embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 71, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 71 comprises first magnetosphere 35 that stacks gradually from first bottom, 14 1 sides 1, second magnetosphere 35 2..., n-1 magnetosphere 35 N-1, n magnetosphere 35 nWith metal magnetic layer 72.At this, n is corresponding to the integer that is greater than or equal to 3.It should be noted that except comprising second bottom 21, the perpendicular magnetic recording medium 70 of perpendicular magnetic recording medium 75 and the 9th embodiment has similar structure.
The beneficial effect that perpendicular magnetic recording medium 75 is realized is similar with the beneficial effect of realizing according to the perpendicular magnetic recording medium 70 of the 9th embodiment.In addition, by second bottom 21 is set, can improve first magnetosphere 35 1To n magnetosphere 35 nThe crystal structure of magnetic particle, and can improve the crystal structure of metal magnetic layer 72.In this way, can improve the playback output level.
In addition, by second bottom, 21, the first magnetospheres 35 are set 1Magnetic particle can fully isolate.Thereby this arrangement of magnetic particle can be delivered to second magnetosphere 35 2To n magnetosphere 35 nIn this way, can improve the S/N ratio of perpendicular magnetic recording medium 75.
It should be noted that according to the manufacture method of the perpendicular magnetic recording medium 65 of the manufacture method of the perpendicular magnetic recording medium 75 of the tenth embodiment and the 8th embodiment basic identically, and omitted its description.
(the 11 embodiment)
According to the perpendicular magnetic recording medium of eleventh embodiment of the invention, realize by being arranged on according to second magnetosphere 62 of the perpendicular magnetic recording medium 60 of the 7th embodiment on the recording layer 55 according to the perpendicular magnetic recording medium 50 of the 5th embodiment.
Figure 17 is the structural section figure of expression according to the perpendicular magnetic recording medium of eleventh embodiment of the invention.Should notice that parts identical with the described parts of the foregoing description in Figure 17 are endowed identical label, and omit their description.
With reference to Figure 17, the perpendicular magnetic recording medium 80 of present embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, recording layer 81, diaphragm 18 and lubricant layer 19 on this substrate 11.Recording layer 81 comprises that composition adjusts film and stacked metal magnetic layer 72 on it, and wherein the atomic concentration of non-dissolubility phase reduces gradually along the direction from first bottom 14 to diaphragm 18 in this recording layer 55.It should be noted that except comprising that being arranged on composition adjusts the metal magnetic layer of being made by the metal hard magnetic material 72 on the film 55 perpendicular magnetic recording medium 80 has similar structure with as shown in Figure 5 the 5th embodiment perpendicular magnetic recording medium 50.Be that the material of other layer of perpendicular magnetic recording medium 80 of present embodiment and thickness can be selected in the material of the perpendicular magnetic recording medium 50 of realizing the 5th embodiment and thickness scope.
The material of metal magnetic layer 72 and thickness can be selected in the above-mentioned Available Material of realizing second magnetosphere 62 of the perpendicular magnetic recording medium 60 of the 7th embodiment as shown in figure 10 and thickness scope.In addition, with first bottom 14 at the interface, the atomic concentration that composition is adjusted the non-molten phase of magnetosphere 55 is arranged to higher relatively, and the atomic concentration of non-molten phase is arranged to reduce gradually near diaphragm 18 time.By realizing this set, with first bottom 14 at the interface, it is separated from one another that composition is adjusted the magnetic particle (not shown) of magnetosphere 55.Should notice that composition adjusts each diameter of the magnetic particle of magnetosphere 55 and be arranged to increase gradually; Yet,, therefore can avoid magnetic particle to engage in the film thickness direction scope of composition adjustment magnetosphere 55 because the base portion of magnetic particle is separated from one another.In addition, adjust on the magnetosphere 55, therefore can make the space homogenising between the magnetic particle of metal magnetic layer 72, thereby can reduce the media noise of perpendicular magnetic recording medium 80 because metal magnetic layer 72 is formed on composition.Thereby, can improve the S/N ratio of perpendicular magnetic recording medium 80.On the other hand, when keeping the reproduction output level, can reduce the thickness of the recording layer 81 of perpendicular magnetic recording medium 80.
It should be noted that according to the manufacture method of the perpendicular magnetic recording medium 65 of the manufacture method of the perpendicular magnetic recording medium 80 of the 11 embodiment and the 8th embodiment basic identically, and omitted its description.
(dozenth embodiment)
According to the perpendicular magnetic recording medium of twelveth embodiment of the invention, by being arranged on the recording layer 55 of perpendicular magnetic recording medium 60, realizing according to second magnetosphere 62 of the perpendicular magnetic recording medium 60 of the 7th embodiment according to the 6th embodiment.
Figure 18 is the sectional view of expression according to the perpendicular magnetic recording medium structure of twelveth embodiment of the invention.Should notice that in Figure 18 the parts identical with the described parts of the foregoing description are endowed identical label, and have omitted their description.
With reference to Figure 18, the perpendicular magnetic recording medium 85 of present embodiment comprises substrate 11, stacks gradually soft magnetic underlayer 12, inculating crystal layer 13, first bottom 14, second bottom 21, recording layer 81, diaphragm 18 and lubricant layer 19 on substrate 11.Recording layer 81 adjusts film 55 by composition and stacked metal magnetic layer 72 on it is formed, and the structure of this composition adjustment film 55 is identical with the structure described in the 11 embodiment.It should be noted that except that comprising second bottom 21 perpendicular magnetic recording medium 85 and the tenth embodiment perpendicular magnetic recording medium 80 as shown in figure 17 have similar structure.Be that the material of other layer of perpendicular magnetic recording medium 85 of present embodiment and thickness can be selected in the scope of the material of the perpendicular magnetic recording medium 80 of realizing the 11 embodiment and thickness.
The beneficial effect that perpendicular magnetic recording medium 85 is realized is similar with the beneficial effect of realizing according to the perpendicular magnetic recording medium 80 of the 11 embodiment.In addition, by second bottom 21 is set, can improves the composition of recording layer 81 and adjust the crystal structure of the magnetic particle of magnetosphere 55, and also can improve the crystal structure of metal magnetic layer 72.In this way, can improve the playback output level.
In addition, by second bottom 21 is set, can fully isolate at the magnetic particle of adjusting magnetosphere 55 with the composition at the interface of second bottom 21.This arrangement of magnetic particle can be delivered to metal magnetic layer 72, thereby realizes more uniform magnetic particle arrangement.In this way, can improve the S/N ratio of perpendicular magnetic recording medium 85.
It should be noted that according to the manufacture method of the perpendicular magnetic recording medium 65 of the manufacture method of the perpendicular magnetic recording medium 85 of the 11 embodiment and the 8th embodiment basic identically, and omitted its description.
[specific embodiment]
Disk according to embodiment 1-4 is described below, and it is as the specific embodiment of the perpendicular magnetic recording medium of seventh embodiment of the invention.Should notice that dissimilar hard magnetic materials is used for second magnetosphere of the disk of embodiment 1-4.And, be arranged to have the first different magnetosphere of thickness according to the disk of embodiment 2-4.
The apokoinou construction of all disks of embodiment 1-4 is described below.
Substrate: glass substrate
Soft magnetic underlayer: CoZrNb film (200nm)
Inculating crystal layer: Ta film (3nm)
First bottom: Ru film (13.2nm)
First magnetosphere: (Co 70Cr 9Pt 21) 87(SiO 2) 13Film
Diaphragm: carbon film (3nm)
Lubricant layer: PFPE (perfluoropolyester) lubricant layer (1nm)
For second magnetosphere, use Co among the embodiment 1 16Cr 20Pt 15B 4Film (7.5nm); Use Co among the embodiment 2 75Cr 20Pt 5Film (6.0nm); Use Co among the embodiment 3 70Cr 20Pt 10Film (6.0nm); And use comprises the Co that sets gradually among the embodiment 4 75Cr 20Pt 5Film (2.5nm) and Co 70Cr 20Pt 10The lamination of film (3.0nm).
After the cleaning glass substrate, in the Ar gas atmosphere of 0.399Pa (3mTorr), form CoZrNb film and Ta film continuously with DC magnetron sputter equipment.Then, in the Ar of 5.32Pa gas atmosphere, use DC magnetron sputter equipment with the 0.55nm/ sedimentation velocity formation Ru film of second.Then, in the Ar of 2.66Pa gas atmosphere, use the CRF sputter equipment to form CoCrPt-SiO 2Film.Then, in the Ar gas atmosphere of 0.399Pa (3mTorr), reuse DC magnetron sputter equipment and form second magnetosphere.Should note in above-mentioned film deposition process, glass substrate not carried out heat treated.Then, depositing carbon film is used lubricant film by immersing (immersion) afterwards, and removes thrust on the magnetic disk surface by sand belt.
In experiment, use perpendicular recording composite head (compound head) and commercial electromagnetic conversion surveying instrument, the average playback about the linear recording density of 124kBPI of measuring that the disk of the embodiment 1-4 that is made by aforesaid way realizes is exported.
Figure 19 is presented at the average chart that reproduces the relation between output and the recording layer thickness in the disk of embodiment 1-4.
As can be seen from Figure 19, compare with embodiment 1, embodiment 2-4 realizes higher reproduction output.Even this is because the thickness of the Film Thickness Ratio embodiment 1 of the recording layer of embodiment 2-4 is thin, but the second magnetospheric Co content of embodiment 2-4 is than embodiment 1 height.Therefore, compare with embodiment 1, the second magnetospheric saturation magnetic flux density Bs of embodiment 2-4 is higher, and the second magnetospheric residual flux metric density of embodiment 2-4 is also higher.Be appreciated that preferably,, in the second magnetospheric CoCrPt material, do not add doped chemical in order to increase the playback output level under the low recording density.Can think and join the crystal structure that this adulterant in the second magnetospheric material may reduce by the second magnetospheric magnetic particle.
And, in the process of comparing embodiment 2 and 3, be appreciated that with embodiment 2 and compare that embodiment 3 realizes higher average reproduction output.As mentioned above, the first magnetospheric Pt content is 21 atom % among the embodiment 2 and 3.For second magnetosphere, the Pt content among the embodiment 2 is 5 atom %, and the Pt content among the embodiment 3 is 10 atom %.Should note Pt content influence grating constant; Being grating constant increases with the increase of Pt content.Therefore, compare with embodiment 2, embodiment 3 can be in second magnetosphere and the first magnetospheric lattice compatibility preferably that obtains at the interface.Therefore, vertical orientated be better than realizing among the embodiment 2 vertical orientated of realizing among the embodiment 3, thus can think that this is the factor that realizes higher average reproduction output among the embodiment 3.Be appreciated that from the above description the second magnetospheric Pt content preferably is arranged near the first magnetospheric Pt content under the situation that first magnetosphere and second magnetosphere are made by CoCrPt.And the experiment that it should be noted that according to the present invention to be done, the Pt content of the first magnetospheric magnetic particle is preferably 21 atom %.
(the 13 embodiment)
Next, describe the magnetic memory apparatus 90 of thriteenth embodiment of the invention, this device is implemented at least a according in the perpendicular magnetic recording medium of first embodiment of the invention to the 12 embodiment.
Figure 20 is the structural drawing of expression according to the magnetic memory apparatus 90 of invention the 13 embodiment.
With reference to Figure 20, magnetic memory apparatus 90 comprises: shell 91, and portion has the wheel shaft 92 that is driven by the axle (not shown) within it; Perpendicular magnetic recording medium 93 is assemblied on the wheel shaft 92 and by wheel shaft 92 and rotates; Brake unit 94; Arm 95 and suspension 96 upwards move attached on the actuating unit 94 and footpath that is arranged in perpendicular magnetic recording medium 93; And magnetic head 98, support by suspension 96.
For example, magnetic head 98 can be made of one pole record-header and the reproduction head that comprises GMR element (giant magnetoresistance).
For example, the one pole record-header can comprise the main pole of being made by soft magnetic material, thinks that perpendicular magnetic recording medium 93 provides recording magnetic field; Return yoke (return yoke), be connected with main pole magnetic; And the record coil, be used for recording magnetic field is directed to main pole and returns yoke.The one pole record-header is set, in vertical direction recording magnetic field is applied to perpendicular magnetic recording medium 93 from main pole, with magnetization at vertical direction induction perpendicular magnetic recording medium 93.
Record-header can comprise the GMR element, and by detecting the magnetic direction that changes in resistance is leaked with the magnetization of determining perpendicular recording medium 93, this GMR element can obtain to be recorded in the information on the recording layer of perpendicular magnetic recording medium 93.Note, for example can use TMR (tunnel junction magnetoresistance) element to replace the GMR element.
Perpendicular magnetic recording medium 93 can be corresponding in the perpendicular magnetic recording medium of the first to the 12 embodiment of the present invention a kind of.As mentioned above, perpendicular magnetic recording medium 93 medium noises reduce, thereby magnetic memory apparatus of the present invention 90 can be realized the high density record.
Note, be not limited to structure shown in Figure 20 according to the structure of the magnetic memory apparatus 90 of present embodiment.And, notice that magnetic head 98 also not only is limited to the description of front, for example, also can use conventional magnetic head.And perpendicular magnetic recording medium 93 is not limited to disk, can be corresponding to the medium of other form, as tape.
According to present embodiment, have the perpendicular magnetic recording medium 93 of the media noise that reduces by use, magnetic memory apparatus 90 can be realized high density recording.
Although the present invention the invention is not restricted to these embodiment by showing with specific preferred embodiment and describing, under the situation of not leaving the scope of the invention, can change and revise.
The application based on and require the interests of the No.2006-049313 of Japanese patent application formerly of the No.2005-099885 of Japanese patent application formerly of on March 30th, 2005 application and application on February 24th, 2006, introduce whole contents here as a reference.

Claims (33)

1. perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere that is layered on this first magnetosphere, and is formed on this first bottom; Wherein
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This first magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And, wherein, this first non-dissolubility phase is set with first atomic concentration with the first non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other;
This second magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis; And, wherein, this second non-dissolubility phase is set with second atomic concentration with the second non magnetic non-dissolubility phase that described second magnetic particle is isolated from each other; And
First atomic concentration of the first non-dissolubility phase in this first magnetosphere is set to the second atomic concentration height than the second non-dissolubility phase in this second magnetosphere.
2. perpendicular magnetic recording medium as claimed in claim 1, wherein,
This second magnetospheric second magnetic particle is listed on this first magnetospheric first magnetic particle surface to correspond to base platoon one by one.
3. perpendicular magnetic recording medium as claimed in claim 1 also comprises:
Second bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is arranged between this first bottom and this recording layer; Wherein,
This second bottom comprises: a plurality of second crystal grain of growing on the direction vertical with this substrate surface, and the gap that isolates described second crystal grain.
4. perpendicular magnetic recording medium as claimed in claim 1, wherein,
The Ru alloy has HCP structure, and comprises at least a among Co, Cr, Fe, Ni and the Mn.
5. perpendicular magnetic recording medium as claimed in claim 1, wherein,
First atomic concentration of the first non-dissolubility phase is arranged in 10～20 atom % scopes in this first magnetosphere.
6. perpendicular magnetic recording medium as claimed in claim 1, wherein,
Second atomic concentration of the second non-dissolubility phase is arranged in the scope of 5～15 atom % in this second magnetosphere.
7. perpendicular magnetic recording medium as claimed in claim 1, wherein,
This first magnetosphere is set to thinner than this second magnetosphere.
8. perpendicular magnetic recording medium as claimed in claim 1, wherein,
This inculating crystal layer is by the amorphous nonmagnetic alloy of element T a, Ti, C, Mo, W, Re, Os, Hf, Mg, Pt, described element and at least a the making among the non magnetic NiP of amorphous.
9. perpendicular magnetic recording medium as claimed in claim 8, wherein,
This inculating crystal layer is corresponding to the monofilm of thickness in 1.0～10nm scope.
10. perpendicular magnetic recording medium as claimed in claim 1, wherein,
At least a corresponding in Ni, Fe, Co, Ni alloy, Fe alloy and the Co alloy of described first magnetic particle and second magnetic particle, described Co alloy comprise CoCr, CoPt, CoCrTa, CoCrPt and by at least a alloy that constitutes in the alloy of CoCrPt and element B, Mo, Nb, Ta, W, Cu and described element.
11. perpendicular magnetic recording medium as claimed in claim 1, wherein,
This first non-dissolubility corresponds to the compound that is made of a kind of element among Si, Al, Ta, Zr, Y and the Mg and at least a element among O, C and the N with this second non-dissolubility mutually.
12. perpendicular magnetic recording medium as claimed in claim 1, wherein,
This first non-dissolubility comprises SiO mutually with this second non-dissolubility mutually 2
SiO in this first magnetosphere 2Atomic concentration be arranged in 10～20 atom % scopes; With
SiO in this second magnetosphere 2Atomic concentration be arranged in 5～15 atom % scopes.
13. a perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer is by stacked first forming to the n magnetosphere continuously in order from this inculating crystal layer one side, and wherein n is corresponding to more than or equal to 3 integer;
Described first comprises respectively to the n magnetosphere: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and isolate described first the non magnetic non-dissolubility phase to the magnetospheric magnetic particle of n; And
Described first the atomic concentration Y1～Yn to magnetospheric each the non-dissolubility phase of n be arranged to Y1＞Y2＞...＞Yn.
14. a perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer;
Recording layer is formed on this first bottom; And
Diaphragm is formed on this recording layer; Wherein
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer comprises: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and the non magnetic non-dissolubility phase of isolating described magnetic particle; And
The atomic concentration of non-dissolubility phase is set to along reducing gradually on the direction at this protective seam interface from this inculating crystal layer interface in this recording layer.
15. a perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere that is layered on this first magnetosphere, and is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This first magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And the non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other, wherein, this first magnetosphere is arranged to have first saturation magnetic flux density;
This second magnetosphere is made by the metal hard magnetic material, and be included in the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis, wherein, this second magnetosphere is arranged to have second saturation magnetic flux density; And
This second magnetospheric second saturation magnetic flux density is set to than this first magnetospheric first saturation magnetic flux density height;
This second magnetospheric second magnetic particle is arranged on this first magnetospheric first magnetic particle surface.
16. perpendicular magnetic recording medium as claimed in claim 15, wherein,
This second magnetospheric second magnetic particle is listed on this first magnetospheric first magnetic particle surface to correspond to base platoon one by one.
17. perpendicular magnetic recording medium as claimed in claim 15, wherein,
This second magnetosphere comprises the gap between at least one adjacent magnetic particle that is formed on described second magnetic particle.
18. perpendicular magnetic recording medium as claimed in claim 15, wherein,
This first magnetospheric first magnetic particle is by having HCP structure and making as the hard magnetic material of principal ingredient with Co; And
Second magnetosphere is by having HCP structure and making as the metal hard magnetic material of principal ingredient with Co.
19. a perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer is by stacked first forming to n magnetosphere and metal magnetic layer continuously in order from this inculating crystal layer one side, and wherein n is corresponding to more than or equal to 3 integer;
Described first comprises respectively to the n magnetosphere: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and isolate described first the non magnetic non-dissolubility phase to the magnetospheric magnetic particle of n;
Described first the atomic concentration Y1～Yn to magnetospheric each the non-dissolubility phase of n be arranged to Y1＞Y2＞...＞Yn;
The saturation magnetic flux density of this metal magnetic layer is set to than described first to the n magnetospheric saturation magnetic flux density height; And
This metal magnetic layer comprises: a plurality of metal magnetic particles of arranging on the magnetospheric magnetic particle of this n surface.
20. a perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer;
Recording layer is formed on this first bottom; And
Diaphragm is formed on this recording layer; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer comprises composition and adjusts layer and metal magnetic layer, this composition adjustment layer be included in the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and the non magnetic non-dissolubility phase of isolating described magnetic particle;
The atomic concentration of non-dissolubility phase is set to along reducing gradually on the direction of this metal magnetic bed interface from this inculating crystal layer interface in this composition adjustment layer;
The saturation magnetic flux density of this metal magnetic layer is set to adjust than this composition the saturation magnetic flux density height of layer; And
This metal magnetic layer comprises: a plurality of metal magnetic particles of arranging on the surface that the magnetic particle of this composition adjustment layer and this metal magnetic layer have a common boundary.
21. perpendicular magnetic recording medium as claimed in claim 20 also comprises:
Second bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is arranged between this first bottom and this recording layer; Wherein,
This second bottom comprises: a plurality of second crystal grain of growing on the direction vertical with this substrate surface, and the gap that isolates described second crystal grain.
22. a magnetic memory apparatus comprises:
The recoding/reproduction unit comprises magnetic head, and
Perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere that is layered on this first magnetosphere, and is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This first magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And, wherein, this first non-dissolubility phase is set with first atomic concentration with the first non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other;
This second magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis; And, wherein, this second non-dissolubility phase is set with second atomic concentration with the second non magnetic non-dissolubility phase that described second magnetic particle is isolated from each other; And
First atomic concentration of the first non-dissolubility phase in this first magnetosphere is set to the second atomic concentration height than the second non-dissolubility phase in this second magnetosphere.
23. a magnetic memory apparatus comprises:
The recoding/reproduction unit comprises magnetic head; And
Perpendicular magnetic recording medium comprises
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer is by stacked first forming to the n magnetosphere continuously in order from this inculating crystal layer one side, and wherein n is corresponding to more than or equal to 3 integer;
Described first comprises respectively to the n magnetosphere: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and isolate described first the non magnetic non-dissolubility phase to the magnetospheric magnetic particle of n; And
First the atomic concentration Y1～Yn to magnetospheric each the non-dissolubility phase of n be arranged to Y1＞Y2＞...＞Yn.
24. a magnetic memory apparatus comprises:
The recoding/reproduction unit, it comprises magnetic head; And
Perpendicular magnetic recording medium comprises
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer;
Recording layer is formed on this first bottom; And
Diaphragm is formed on this recording layer; Wherein
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer comprises: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and the non magnetic non-dissolubility phase of isolating described magnetic particle; And
The atomic concentration of non-dissolubility phase is set to along reducing gradually on the direction at this protective seam interface from this inculating crystal layer interface in this recording layer.
25. a magnetic memory apparatus comprises:
The recoding/reproduction unit comprises magnetic head, and
Perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer comprises first magnetosphere and second magnetosphere that is layered on this first magnetosphere, and is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This first magnetosphere comprises: with the vertical substantially direction of this substrate surface on have a plurality of first magnetic particles of easy magnetizing axis; And the non magnetic non-dissolubility phase that described first magnetic particle is isolated from each other, wherein, this first magnetosphere is arranged to have first saturation magnetic flux density;
This second magnetosphere is made by the metal hard magnetic material, and be included in the vertical substantially direction of this substrate surface on have a plurality of second magnetic particles of easy magnetizing axis, wherein, this second magnetosphere is arranged to have second saturation magnetic flux density; And
This second magnetospheric second saturation magnetic flux density is set to than this first magnetospheric first saturation magnetic flux density height;
This second magnetospheric second magnetic particle is arranged on this first magnetospheric first magnetic particle surface.
26. a magnetic memory apparatus comprises:
The recoding/reproduction unit comprises magnetic head, and
Perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer; And
Recording layer is formed on this first bottom; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer is by stacked first forming to n magnetosphere and metal magnetic layer continuously in order from this inculating crystal layer one side, and wherein n is corresponding to more than or equal to 3 integer;
Described first comprises respectively to the n magnetosphere: with the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and isolate described first the non magnetic non-dissolubility phase to the magnetospheric magnetic particle of n;
Described first the atomic concentration Y1～Yn to magnetospheric each the non-dissolubility phase of n be arranged to Y1＞Y2＞...＞Yn;
The saturation magnetic flux density of this metal magnetic layer is set to than described first to the n magnetospheric saturation magnetic flux density height; And
This metal magnetic layer comprises: a plurality of metal magnetic particles of arranging on the magnetospheric magnetic particle of this n surface.
27. a magnetic memory apparatus comprises:
The recoding/reproduction unit comprises magnetic head, and
Perpendicular magnetic recording medium comprises:
Substrate;
Soft magnetic underlayer is formed on this substrate;
Inculating crystal layer is made by non-crystalline material, and is formed on this soft magnetic underlayer;
First bottom is made as the Ru alloy of principal ingredient by Ru or with Ru, and is formed on this inculating crystal layer;
Recording layer is formed on this first bottom; And
Diaphragm is formed on this recording layer; Wherein,
This first bottom comprises the polycrystalline film that is formed by a plurality of first crystal grain, and described first crystal grain is bonded to each other by grain boundary portion;
This recording layer comprises composition and adjusts layer and metal magnetic layer, this composition adjustment layer be included in the vertical substantially direction of this substrate surface on have a plurality of magnetic particles of easy magnetizing axis, and the non magnetic non-dissolubility phase of isolating described magnetic particle;
The atomic concentration of non-dissolubility phase is set to along reducing gradually on the direction of this metal magnetic bed interface from this inculating crystal layer interface in this composition adjustment layer;
The saturation magnetic flux density of this metal magnetic layer is set to adjust than this composition the saturation magnetic flux density height of layer; And
This metal magnetic layer comprises: a plurality of metal magnetic particles of arranging on the surface that the magnetic particle of this composition adjustment layer and this metal magnetic layer have a common boundary.
28. the manufacture method of a perpendicular magnetic recording medium, this perpendicular magnetic recording medium comprises: substrate, on this substrate, form soft magnetic underlayer, inculating crystal layer, first bottom, first magnetosphere and second magnetosphere continuously, wherein said first and second magnetospheres be included in respectively with the vertical substantially direction of this substrate surface on the non magnetic non-dissolubility that has a plurality of magnetic particles of easy magnetizing axis and isolate described magnetic particle mutually, the method includes the steps of:
On this soft magnetic underlayer, form the inculating crystal layer of making by non-crystalline material;
On this inculating crystal layer, form by the Ru or first bottom made as the Ru alloy of principal ingredient with Ru;
On this first bottom, form first magnetosphere by the sputter of using first sputtering target; And
On this first magnetosphere, form second magnetosphere by the sputter of using second sputtering target; Wherein
This first sputtering target and this second sputtering target comprise hard magnetic material and nonmagnetic substance, and this nonmagnetic substance is made by any of oxide, carbonide or nitride; And
The atomic concentration of nonmagnetic substance is than the atomic concentration height of nonmagnetic substance in this second sputtering target in this first sputtering target.
29. the manufacture method of perpendicular magnetic recording medium as claimed in claim 28, wherein,
When the step that carry out to form soft magnetic underlayer does not have heated substrates when forming the second magnetospheric step.
30. the manufacture method of perpendicular magnetic recording medium as claimed in claim 28 also comprises:
The step of formation second bottom that carries out between the step that forms this first bottom and this first magnetospheric step of formation, the step of described formation second bottom comprise to carry out sputtering technology under the sedimentation velocity in 0.1～2nm/ scope second, the air pressure in 2.66～26.6 handkerchief scopes.
31. the manufacture method of a perpendicular magnetic recording medium, this perpendicular magnetic recording medium comprises: substrate, on this substrate, form soft magnetic underlayer, inculating crystal layer, first bottom, first magnetosphere and second magnetosphere continuously, wherein said first and second magnetospheres be included in respectively with the vertical substantially direction of this substrate surface on the non magnetic non-dissolubility that has a plurality of magnetic particles of easy magnetizing axis and isolate described magnetic particle mutually, the method includes the steps of:
On this soft magnetic underlayer, form the inculating crystal layer of making by non-crystalline material;
On this inculating crystal layer, form by the Ru or first bottom made as the Ru alloy of principal ingredient with Ru;
Form first magnetosphere by the sputter of using first sputtering target on this first bottom, this first sputtering target comprises hard magnetic material and nonmagnetic substance, and this nonmagnetic substance is made by any of oxide, carbonide or nitride; And
Form second magnetosphere by the sputter of using second sputtering target on this first magnetosphere, this second sputtering target is made by hard magnetic material.
32. the manufacture method of perpendicular magnetic recording medium as claimed in claim 31, wherein,
When the step that carry out to form soft magnetic underlayer does not heat substrate when forming the second magnetospheric step.
33. the manufacture method of perpendicular magnetic recording medium as claimed in claim 31 also comprises:
The formation second bottom step of carrying out between the step that forms this first bottom and this first magnetospheric step of formation, the step of described formation second bottom comprise to carry out sputtering technology under the sedimentation velocity in 0.1～2nm/ scope second, the air pressure in 2.66～26.6 handkerchief scopes.
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