CN1838245A - Magnetic sensor having a ru/si based seedlayer providing improved free layer biasing - Google Patents
Magnetic sensor having a ru/si based seedlayer providing improved free layer biasing Download PDFInfo
- Publication number
- CN1838245A CN1838245A CNA2005101361972A CN200510136197A CN1838245A CN 1838245 A CN1838245 A CN 1838245A CN A2005101361972 A CNA2005101361972 A CN A2005101361972A CN 200510136197 A CN200510136197 A CN 200510136197A CN 1838245 A CN1838245 A CN 1838245A
- Authority
- CN
- China
- Prior art keywords
- layer
- sensor
- crmo
- seed layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
- G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
- G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
Abstract
A magnetoresistive sensor having a novel seed layer that allows a bias layer formed there over to have exceptional hard magnetic properties when deposited over a crystalline structure such as an AFM layer in a partial mill sensor design. The seed layer structure includes alternating layers of Ru and Si and a layer of CrMo formed thereover. The seed layer interrupts the epitaxial growth of an underlying crystalline structure, allowing a hard magnetic material formed over the seed layer to have a desired grain structure that is different from that of the underlying crystalline layer. The seed layer is also resistant to corrosion, providing improved sense current conduction to the sensor.
Description
Technical field
The present invention relates to the free layer biasing in the (CPP) magnetoresistive sensor, more specifically, relate to and be formed on a Seed Layer of using with the biasing layer on the crystal structure.
Background technology
The core of computing machine longer-term storage is the assembly that is known as disc driver.Thereby disc driver comprises spinning disk, is suspended on the write and read head of spinning disk near surface by cantilever and rotates cantilever the read and write head is placed the actuator (actuator) on the selected circular track on the spinning disk.The read and write head is located immediately on the have air cushion surface slide block of (ABS).Cantilever makes slide block deflection panel surface, and when disc spins, the air of contiguous magnetic disk surface moves with disk.Slide block flies on this air that moves with the magnetic disk surface low-down height in top (flying height).This flying height is the magnitude of dust.When slide block rode on this air cushion, the write and read head was used to magnetic transition (magnetic transition) is write spinning disk and reads magnetic transition from spinning disk.Thereby connecting according to the treatment circuit of computer program operation, the read and write head realizes the write and read function.
Writing head comprises the coil layer that is buried among first, second and the 3rd insulation course (insulation is piled up), and insulation is piled up and is clipped between the first and second pole piece layers.Locate the gap at the air cushion surface (ABS) of writing head and be formed on by clearance layer between the first and second pole piece layers, this pole piece layer connects at back of the body interval.The electric current that is transmitted to coil layer is responded to magnetic flux in pole piece, it causes magnetic field to write the gap location disperse at ABS coming out, and is used on move media magnetic track and writes above-mentioned magnetic transition, for example on above-mentioned spinning disk in the circular track.
In recent read head design, spin-valve sensor is also referred to as giant magnetoresistance (GMR) sensor, has been used to detect the magnetic field from spinning disk.This sensor comprises the non-magnetic conductive layer that hereinafter is called wall, and it is sandwiched between first and second ferromagnetic layers that hereinafter are called nailed layer and free layer.First and second leads are connected to spin-valve sensor, with conduction the detection electric current by the there.The magnetic quilt pinning of nailed layer is perpendicular to air cushion surface (ABS), and the magnetic moment of free layer is biased to and is parallel to ABS, but can rotate freely in response to external magnetic field.The magnetization of nailed layer is usually by pinned with the exchange coupling of inverse ferric magnetosphere.
The thickness of wall is selected as the mean free path less than the conduction electron that passes sensor.Adopt this to be provided with, a part of conduction electron is spaced apart each the interface institute scattering of layer and nailed layer and free layer.When the magnetization of nailed layer and free layer is parallel to each other, the scattering minimum, when the magnetization antiparallel of nailed layer and free layer, the scattering maximum.The variation of scattering and cos θ change the resistance of spin-valve sensor pro rata, and wherein θ is the angle between the magnetization of nailed layer and free layer.In reading mode, the resistance of spin-valve sensor with respect to changing from the magnetic field of spinning disk with being in proportion.When detecting conduction of current by this spin-valve sensor, resistance variations causes change in voltage, and it is detected and handles as replay signal (playback signal).
It is called as simple Spin Valve when spin-valve sensor adopts single nailed layer.It is called as the pinned Spin Valve of AP when Spin Valve adopts antiparallel (AP) nailed layer.The AP Spin Valve comprises by thin non magnetic coupling layer such as isolated first and second magnetospheres of Ru.Thereby select the magnetic moment of ferromagnetic layer of the thickness coupled in anti-parallel nailed layer of this wall.Spin Valve is (after being formed on free layer) or (before free layer) is also referred to as top type Spin Valve or die bed Spin Valve in the bottom at the top according to pinning layer.
The magnetization of nailed layer usually by one of exchange coupling ferromagnetic layer (AP1) and antiferromagnetic material for example the layer of PtMn be fixed.Though for example inner and not magnetization of PtMn of antiferromagnet own, when with magnetic material exchange coupling, it is the magnetization of this ferromagnetic layer of pinning consumingly.
Spin-valve sensor is read between the clearance layer in the insulation of the first and second non-magnetoelectricities, and this first and second reads clearance layer between ferromagnetic first and second screen layers.In combination type (merged) magnetic head, single ferromagnetic layer act as the secondary shielding layer of read head and the first pole piece layer of writing head.In backpack (piggyback) magnetic head, the secondary shielding layer and the first pole piece layer are layers separately.
It will be understood by those skilled in the art that the position long (bit length) of distance (spacer thickness (gapthickness)) the decision read transducer between the shielding part.Owing to the raising data capacity that increases day by day and the pressure of data rate, engineers is being born the pressure of the position long (and then spacer thickness) that reduces read transducer always.A kind of method that reduces this spacer thickness is by the part grinding technics.Be that complete rete comes structure sensor by deposition sensor layer on first clearance layer traditionally.Photoresist mask is formed on then will be become on the zone of sensor, and implements for example ion grinding of material removal process, removes material with the zone of never masked covering.Implement this material removal process traditionally down in first clearance layer, remove the part of first clearance material in the sensor both sides.
Because this material removal process has been removed the part of first clearance layer, therefore need first clearance layer of deposition of thick to prevent to pass the electrical short of this gap to first screen layer.Such short circuit will be a catastrophic incident, and it can make sensor use.In the magnetic head of these prior aries, by hard magnetic material for example the hard bias layer that constitutes of CoPtCr be deposited on the part that etches of sensor both sides first clearance layer, thereby so that the magnetic moment of magnetic bias at the required direction upper offset free layer that is parallel to ABS to be provided.
As mentioned above, the removal of the part of first clearance layer needs bigger overall spacer thickness to prevent short circuit during the formation of sensor.A kind of method that overcomes it is to use the part grinding technics, wherein before all sensors material is removed for example near material removal process arrives sensor base during about AFM layer (being generally PtMn) a bit, termination is used for the material removal process (being the ion grinding) of structure sensor.By for example stop grinding technics at the AFM layer in sensor layer, material very close to each other is removed.This allow deposition of thin many gaps.On remaining sensor layer rather than on clearance layer, deposit the biasing layer then.
Such part is ground the problem that produces, and compares in the time of on being deposited on the AFM layer or on other the sensor layer with on being deposited on clearance layer, and the attribute of biasing layer is different.Be generally Al
2O
3Clearance layer be amorphous.Therefore when material was deposited on this clearance layer, it did not have crystal structure to pass to Seed Layer or hard bias material.Therefore, the hard bias structure that is deposited on the amorphous clearance layer can have required epitaxial growth, and it provides the free layer biasing required high residual magnetic moment of wanting (retentive moment) and high-coercive force.
Yet, the AFM layer, for example PtMn, and other sensor layer is not an amorphous, presents they self crystalline granular texture (grain structure).When hard bias layer was deposited on the AFM layer, the crystalline granular texture of following AFM layer was maintained to Seed Layer and hard bias layer.Unwanted this crystalline granular texture attribute that causes setovering is degenerated concerning desirable hard bias attribute.The signal noise that this causes the free layer instability and is associated.For example, the CoPtCr hard magnetic material that will have the Cr Seed Layer is deposited on the PtMn substrate, causes the CoPtCr hard bias layer to have the only coercive force of about 600Oe.This coercive force than resulting about 1400Oe when identical hard bias layer and seed layer deposition are on glass (amorphous) substrate is much lower.
Another problem of the Seed Layer existence of using at present is such Seed Layer, for example contains those of Ta, oxidation easily.Because Seed Layer exposes at the ABS place, they are exposed to atmospheric elements during use, and are exposed to certain corrosive atmosphere during for example grinding during manufacture.The oxidation of Seed Layer causes between hard bias layer and the sensor and increased resistance between lead and the sensor.This increased resistance has reduced the performance of sensor.
Therefore strongly need a kind of hard bias structure, it can be formed on AFM material or other sensor material, still presents the effective free layer needed necessary Hard Magnetic attribute of setovering simultaneously.The hard bias layer that such bias structure will preferably allow for example to contain Co, Pt and Cr is applied on the AFM layer of PtMn for example, and hard bias layer can not have the crystalline granular texture of the AFM layer below unwanted.Such bias structure also will preferably can not produce the increased resistance that is caused by corrosion.
Summary of the invention
The invention provides a kind of (CPP) magnetoresistive sensor with free layer biasing of improvement.This sensor comprises the layer with crystal structure.This layer can be for example antiferromagnetic (AFM) material, such as PtMn.The seed layer deposition that comprises Si and Ru is on this crystal layer, and the layer of CrMo is at this Seed Layer top.The layer of hard magnetic material is formed on this Seed Layer then.This hard magnetic material can be to be selected from for example material among CoPt or the CoPtCr of several hard magnetic materials.
Seed Layer structure that should novelty of the present invention advantageously allows to deposit thereon hard magnetic layer and presents and be used for stable and the effective good Hard Magnetic attribute of free layer biasing.The crystalline granular texture of the crystal layer below this Seed Layer blocking-up is unwanted, and the required crystal growth of initialization in the superincumbent hard bias layer of deposition.The layer of Si act as cushion in the Seed Layer, to block the crystal structure of the crystal layer that following sensor piles up.
In addition, this novel Seed Layer can not run into the problem of oxidation that the Seed Layer of prior art presents.This Si/Ru multilayer is difficult for oxidation, and they form conductive silicide when their oxidations.This allows this Seed Layer to provide better electric conductivity in the junction of this sensor and this biasing layer and lead.
Read following detailed description in conjunction with the accompanying drawings, these and other advantage of the present invention and feature will become obvious.
Description of drawings
Essence for a more complete understanding of the present invention, advantage and preferably use pattern are please read following detailed description in conjunction with the accompanying drawings, and wherein accompanying drawing does not meet ratio.
Fig. 1 is the synoptic diagram that wherein can realize disk drive system of the present invention;
Fig. 2 is the ABS figure of slide block, and it is the intercepting of 2-2 line from Fig. 1, and the position of magnetic head thereon is shown;
Fig. 3 is the ABS figure according to the Magnetic Sensor of the embodiment of the invention that obtains from the ring 3 of Fig. 2; And
Fig. 4 is the amplification view of the Seed Layer used among the present invention.
Embodiment
Following description is about being used to implement the preferred embodiment of present design of the present invention.This illustrative purposes is to illustrate ultimate principle of the present invention, and is not the inventive concept that will limit here to be stated.
Referring now to Fig. 1,, shows and implement disk drive 100 of the present invention.As shown in Figure 1, at least one rotatable disk 112 is supported on the axle (spindle) 114, and is rotated by disk drive motor 118.Magnetic recording on each dish is the form of the circular pattern of concentric data magnetic track (not shown) on the disk 112.
At least one slide block 113 is positioned near the disk 112, and each slide block 113 is supported one or more head stacies 121.When disk rotates, slide block 113 on magnetic disk surface 122 radially turnover move, write therein different magnetic tracks thereby head stack 121 can enter the desired data of disk.Each slide block 113 is attached to actuator arm 119 by cantilever 115.Cantilever 115 provides slight elastic force, and this elastic force makes slide block 113 deflection magnetic disk surfaces 122.Each actuator arm 119 is attached to actuating device 127.Actuating device 127 shown in Figure 1 can be voice coil motor (VCM).VCM comprises the coil that can move in fixed magnetic field, direction that this coil moves and speed are controlled by the motor current signal that is provided by controller 129.
The disc storaging system run duration, being rotated between slide block 113 and the panel surface 122 to produce of disk 112 applies the power upwards or the air cushion of lifting force to slide block.So, and support slide block 113 to leave panel surface and float on the panel surface a little with little substantially invariable distance in the slight elastic force of this air cushion balanced cantilever 115 of normal operation period.
The various constituent elements of disc storaging system are in operation and are controlled by the control signal of control module 129 generations, for example access control signal and internal clock signal.Usually, control module 129 contains logic control circuit, memory device and microprocessor.Thereby control module 129 produces control signal and controls various system operations, for example the CD-ROM drive motor control signal on the line 123 and head position on the line 128 and tracking control signal.Control signal on the line 128 provides required current curve (current profile), thereby optimally moves and the desired data magnetic track of positioning sliding block 113 to the disk 112.The write and read signal is communicated to writing head by recording channel 125 and spreads out of from read head.
With reference to Fig. 2, can see the orientation of magnetic head 121 in the slide block 113 in more detail.Fig. 2 is the ABS view of slide block 113, can see that the magnetic head that comprises inductive writing head and read transducer is positioned at the tail edge of slide block.More than to the additional demonstration of the explanation of ordinary magnetic disc storage system and Fig. 1 only for the purpose of description.Should be apparent that disc storaging system can comprise a plurality of dishes and actuator, and each actuator can be supported a plurality of slide blocks.
Referring now to Fig. 3,, comprises that according to the (CPP) magnetoresistive sensor 300 of the embodiment of the invention sensor that is clipped between first and second clearance layer 304 and 306 piles up 302.Sensor piles up 302 and comprises magnetic nailed layer (magnetic pinned layer) structure 308 and magnetic free layer 310.Nonmagnetic conductive wall 312 for example Cu is clipped between free layer 310 and the pinned layer structure 308.Block layer 314 for example Ta can be arranged on sensor and piles up on 302 the top, avoids damaging in manufacture process with the protection sensor, for example avoids corrosion in annealing process subsequently.
Nailed layer 308 can be simple pinned structure or the pinned structure of antiparallel (AP), and be preferably the pinned structure of AP that comprises first and second magnetospheres 316 (AP1) and 318 (AP2), it can be for example to cross for example CoFe of Ru coupled in anti-parallel of thin AP coupling layer 320.Free layer 310 can by multiple magnetic material for example NiFe or CoFe constitute, and can comprise the layer of CoFe and NiFe, for desirable sensor performance, adjacent partition layer 312 preferably has one deck CoFe or Co.
Can find out that referring to Fig. 3 sensor piles up 302 and has the first and second horizontal relative sidewalls 322,324, road wide (track-width) or effective coverage (the active area) of its definition sensor.The layer 326 and 316 exchange coupling of AP1 layer of preferred antiferromagnetic (AFM) material for PtMn that is formed on that sensor piles up 302 bottoms.The AFM layer has high coercive force, and when with 316 exchange coupling of AP1 layer the magnetic moment of pinning AP1 layer 316 consumingly, shown in arrow 328.This follows the magnetic moment 330 of strong pinning AP2 layer 318 by crossing the antiparallel exchange coupling of AP coupling layer 320.It can also be seen that AFM layer 326 has the part 332 in the wide or effective coverage, the road that is arranged on sensor, also has the first and second horizontal expansion parts 334,336 of the effective coverage that laterally extends outwardly beyond sensor 300.AFM layer 326 can be formed on the Seed Layer 327, thereby selects to constitute material required crystal structure of initialization in AFM layer 326 of Seed Layer 327.Because be used for the part grinding technics of structure sensor 300, horizontal expansion part 334,336 can be thinner slightly than interior section 332.Should point out that other sensor layer is nailed layer 308 or the also extensible effective coverage that surpasses sensor 300 of wall 312 for example.The independent extension of AFM is only used for example.Alternatively, thus can implement the part grinding technics fully and remove AFM layer 326 beyond the sensor region, the Seed Layer 327 that only staying laterally stretches out exceeds.
Continuation is with reference to Fig. 3, and sensor 300 comprises the first and second hard magnetic bias layers (HB layer) 338,340.In addition, first and second leads 337,339 are formed on the HB layer 338,340.Lead 337,339 can be made of for example Ta, Au, Rh or some other conductive material.HB layer 338,340 preferred by the alloy that comprises Co, Pt and Cr more specifically by Co
80Pt
12Cr
8Constitute.Hard bias layer 338,340 has high magnetic coercive force, and with free layer 310 magnetostatic couplings, with magnetic moment at the direction upper offset free layer 310 that is parallel to ABS shown in the arrow 341.
Seed Layer 342,344 is arranged under the HB layer 338,340.Seed Layer 342,344 is preferably extended piling up on the horizontal expansion part 334,336 of AFM layer and at sensor on 302 the sidewall 322,324.
Referring to Fig. 4, each all constitutes a plurality of layers compound in the Seed Layer 342,344.Seed Layer comprises Ru layer 402 and Si layer 404 alternately.These layers can be that for example 3 to 15 dusts are thick, and it is thick to be preferably about 5 dusts.The Ru layer can be also can not be the same thick with the Si layer.Seed Layer 342,344 also comprises the CrMo layer 406 that is formed on the Seed Layer top.The CrMo layer can be that 5 to 100 dusts are thick.The CrMo layer is preferably 40 to 60 dusts or about 50 dusts are thick.CrMo layer 406 preferably includes the Mo of 10-30 atomic percent or the Mo of about 20 atomic percents.The order that is to be noted that Ru layer alternately and Si layer is not strict.Perhaps Ru layer 402 or Si layer 404 can be positioned at adjacent with CrMo layer 406.In addition, Fig. 4 illustrates Seed Layer 342,344 and has Ru layer 402 and Si layer 404 each is two-layer.Although this number of plies is preferred, this number is not strict with for purposes of the invention.Seed Layer can comprise more or less layer 402,404, and can contain the Ru layer 402 with Si layer 404 different number.
Compare with the prior art Seed Layer that comprises the Ta layer, Seed Layer 342,344 of the present invention provides and the oxidation advantages associated.Ta is highly active metal, the Seed Layer of prior art, and for example Ta/Si/CrMo or Ta/Si/Cr have been found that meeting is oxidized.The above-mentioned Seed Layer that does not comprise Ta is this etching problem not then.The Ru/Si sandwich construction is not easy oxidation.In addition, when the Ru/Si sandwich construction was oxidized, it formed conductive silicide, therefore can not stop to detect the current direction sensor.
Seed Layer 342,344 promotes the required epitaxial crystal growth in the deposition HB layer 338,340 thereon.This required crystalline granular texture allows hard bias layer to have required high magnetic moment and high-coercive force in the hard bias layer 338,340, and it is setovered to strong free layer is necessary.
When using in conjunction with above-mentioned Seed Layer 342,344 and being deposited on the crystal AFM material 332, above-mentioned hard magnetic material (CoPtCr) has been proved to be to having very high coercive force and squareness (squareness).In the time of on being deposited on above-mentioned Seed Layer structure 342,344, have been found that hard bias layer 338,340 has about 1500 coercive force, and about 0.8 squareness.Although the heterogeneity of hard bias layer 338,340 is possible, adopt Co
80Pt
12Cr
8Realized excellent results.
Though various embodiment of the present invention has been described above, should be understood that they just are suggested in the mode of example, rather than restriction.Other embodiment that falls among the scope of the invention also becomes obvious to those skilled in the art.Therefore, range of the present invention and scope should not be limited to any above-mentioned exemplary embodiment, but should only define according to accompanying Claim and equivalent thereof.
Claims (21)
1. (CPP) magnetoresistive sensor comprises:
Sensor piles up, and it has the first and second horizontal opposite flanks of definition effective coverage, and has the first and second horizontal expansion parts of this effective coverage that extends beyond this sensor, and each all has this horizontal expansion part crystal structure and have the surface;
Seed Layer, it is formed on the described surface of each horizontal expansion part, and this Seed Layer comprises at least one deck Ru, one deck Si and one deck CrMo at least at least; And
First and second hard magnetic layers, it is formed on this Seed Layer on each of first and second horizontal expansions parts of antiferromagnet layer.
2. sensor as claimed in claim 1, wherein this Ru layer and this Si layer each have the thickness of 3-15 dust.
3. sensor as claimed in claim 1, wherein this Ru layer and this Si layer each have the thickness of about 5 dusts.
4. sensor as claimed in claim 1, wherein this CrMo layer has the thickness of 5 to 100 dusts.
5. sensor as claimed in claim 1, wherein this CrMo layer has the thickness of 40 to 60 dusts.
6. sensor as claimed in claim 1, wherein this CrMo layer has the thickness of about 50 dusts.
7. sensor as claimed in claim 1, wherein this CrMo layer comprises the Mo of 10-30 atomic percent.
8. sensor as claimed in claim 1, wherein this CrMo layer comprises the Mo of about 20 atomic percents.
9. (CPP) magnetoresistive sensor comprises:
Sensor piles up, and it has the first and second horizontal opposite flanks of definition effective coverage, and has the first and second horizontal expansion parts of this effective coverage that extends beyond this sensor, and each all has this horizontal expansion part crystal structure and have the surface;
Seed Layer, it is formed on this surface of each horizontal expansion part, and this Seed Layer comprises:
A plurality of layers that comprise Ru;
A plurality of layers that comprise Si, this comprise Ru the layer and comprise Si the layer arrange in the mode that replaces each other; And
The CrMo layer, it is arranged on this layer that replaces that comprises Ru and Si; And
First and second hard magnetic layers, it is formed on this Seed Layer on each of first and second horizontal expansions parts of antiferromagnet layer.
10. sensor as claimed in claim 9, wherein this comprise Ru the layer and this comprise Si the layer each have the thickness of 3-15 dust.
11. sensor as claimed in claim 9, wherein each this comprise that the layer of Ru and each comprise that the layer of Si has the thickness of about 5 dusts.
12. sensor as claimed in claim 9, wherein this comprises that the layer of CrMo has the thickness of 5 to 100 dusts.
13. sensor as claimed in claim 9, wherein this comprises that the layer of CrMo has the thickness of 40 to 60 dusts.
14. sensor as claimed in claim 9, wherein this comprises that the layer of CrMo has the thickness of about 50 dusts.
15. sensor as claimed in claim 9, wherein this comprises that the layer of CrMo has the Mo of 10 to 30 atomic percents.
16. sensor as claimed in claim 9, wherein this comprises that the layer of CrMo has the Mo of about 20 atomic percents.
17. sensor as claimed in claim 9, wherein this Seed Layer comprises the layer of the two-layer Ru of containing and the layer of the two-layer Si of containing.
18. sensor as claimed in claim 9, wherein this part that contains the layer of Ru is made of Ru substantially.
19. sensor as claimed in claim 9, wherein this layer that contains Si is made of Si substantially.
20. sensor as claimed in claim 9, wherein the horizontal expansion of piling up of this sensor partly contains antiferromagnet.
21. a magnetic data register system comprises:
Magnetic medium;
Actuator;
The cantilever that is connected with this actuator;
With the slide block that this actuator is connected, be used for the moving of surface of contiguous this magnetic medium;
With the (CPP) magnetoresistive sensor that this slide block is connected, this sensor comprises:
Sensor piles up, and it has the first and second horizontal opposite flanks of definition effective coverage, and has the first and second horizontal expansion parts of this effective coverage that extends beyond this sensor, and each has this horizontal expansion part crystal structure and have the surface;
Seed Layer, it is formed on this surface of each horizontal expansion part, and this Seed Layer comprises:
A plurality of layers that comprise Ru;
A plurality of layers that comprise Si, this layer that comprises the layer of Ru and comprise Si is with each other
Mode is alternately arranged; And
The CrMo layer, it is arranged on this layer that replaces that comprises Ru and Si; With
And
First and second hard magnetic layers, it is formed on this Seed Layer on each of first and second horizontal expansions parts of antiferromagnet layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/033,435 US7616409B2 (en) | 2005-01-10 | 2005-01-10 | Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasing |
| US11/033,435 | 2005-01-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1838245A true CN1838245A (en) | 2006-09-27 |
Family
ID=36652996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005101361972A Pending CN1838245A (en) | 2005-01-10 | 2005-12-20 | Magnetic sensor having a ru/si based seedlayer providing improved free layer biasing |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7616409B2 (en) |
| CN (1) | CN1838245A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853732A (en) * | 2010-06-01 | 2010-10-06 | 王建国 | Multi-layer film structure producing magnetic bias field |
| CN108267632A (en) * | 2018-04-13 | 2018-07-10 | 贵州雅光电子科技股份有限公司 | A kind of AMR linear transducers and its design method based on winding bias |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4146818B2 (en) * | 2004-04-21 | 2008-09-10 | Ｔｄｋ株式会社 | Thin film magnetic head, head gimbal assembly, and hard disk drive |
| US20080137237A1 (en) * | 2006-12-12 | 2008-06-12 | Hitachi Global Storage Technologies | Magnetoresistive sensor having a hard bias buffer layer, seed layer structure providing exceptionally high magnetic orientation ratio |
| US9039768B2 (en) | 2006-12-22 | 2015-05-26 | Medos International Sarl | Composite vertebral spacers and instrument |
| US7990659B2 (en) * | 2007-07-09 | 2011-08-02 | International Business Machines Corporation | Magnetic head with protective films |
| US8068315B2 (en) * | 2007-09-26 | 2011-11-29 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers |
| US8724264B2 (en) * | 2008-09-04 | 2014-05-13 | Tdk Corporation | Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head |
| KR101312978B1 (en) * | 2009-01-27 | 2013-10-01 | 에이저 시스템즈 엘엘시 | Critical-path circuit for performance monitoring |
| US9526620B2 (en) | 2009-03-30 | 2016-12-27 | DePuy Synthes Products, Inc. | Zero profile spinal fusion cage |
| US9393129B2 (en) | 2009-12-10 | 2016-07-19 | DePuy Synthes Products, Inc. | Bellows-like expandable interbody fusion cage |
| US11529241B2 (en) | 2010-09-23 | 2022-12-20 | DePuy Synthes Products, Inc. | Fusion cage with in-line single piece fixation |
| US20120078372A1 (en) | 2010-09-23 | 2012-03-29 | Thomas Gamache | Novel implant inserter having a laterally-extending dovetail engagement feature |
| US20120078373A1 (en) | 2010-09-23 | 2012-03-29 | Thomas Gamache | Stand alone intervertebral fusion device |
| US8385025B2 (en) * | 2010-12-15 | 2013-02-26 | HGST Netherlands B.V. | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer |
| US9271836B2 (en) | 2012-03-06 | 2016-03-01 | DePuy Synthes Products, Inc. | Nubbed plate |
| US10182921B2 (en) | 2012-11-09 | 2019-01-22 | DePuy Synthes Products, Inc. | Interbody device with opening to allow packing graft and other biologics |
| US10940016B2 (en) | 2017-07-05 | 2021-03-09 | Medos International Sarl | Expandable intervertebral fusion cage |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3455037B2 (en) | 1996-11-22 | 2003-10-06 | アルプス電気株式会社 | Spin-valve thin film element, method of manufacturing the same, and thin-film magnetic head using the spin-valve thin film element |
| US6208492B1 (en) * | 1999-05-13 | 2001-03-27 | International Business Machines Corporation | Seed layer structure for spin valve sensor |
| US6396671B1 (en) * | 2000-03-15 | 2002-05-28 | Headway Technologies, Inc. | Ruthenium bias compensation layer for spin valve head and process of manufacturing |
| JP2002050011A (en) * | 2000-08-03 | 2002-02-15 | Nec Corp | Magnetoresistive effect element, magnetoresistive effect head, magnetoresistive conversion system, and magnetic recording system |
| US6636400B2 (en) | 2001-09-18 | 2003-10-21 | International Business Machines Corporation | Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer |
| US6624985B1 (en) * | 2002-01-07 | 2003-09-23 | International Business Machines Corporation | Pinning layer seeds for CPP geometry spin valve sensors |
| US7149062B2 (en) | 2002-02-26 | 2006-12-12 | Hitachi Global Storage Technologies Netherlands, B.V. | Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness |
| JP3730627B2 (en) * | 2003-02-28 | 2006-01-05 | 株式会社東芝 | Magnetic recording medium and magnetic recording / reproducing apparatus |
| US6944939B2 (en) | 2003-03-21 | 2005-09-20 | Headway Technologies, Inc. | Method for forming a GMR sensor having improved longitudinal biasing |
| KR100988081B1 (en) * | 2003-04-23 | 2010-10-18 | 삼성전자주식회사 | Magnetic Random Access Memory comprising middle oxide layer formed with hetero-method and method of manufacturing the same |
| US7483246B2 (en) * | 2004-09-29 | 2009-01-27 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic sensor having a seedlayer for providing improved hard magnet properties |
-
2005
- 2005-01-10 US US11/033,435 patent/US7616409B2/en not_active Expired - Fee Related
- 2005-12-20 CN CNA2005101361972A patent/CN1838245A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853732A (en) * | 2010-06-01 | 2010-10-06 | 王建国 | Multi-layer film structure producing magnetic bias field |
| CN101853732B (en) * | 2010-06-01 | 2012-12-05 | 王建国 | Multi-layer film structure producing magnetic bias field |
| CN108267632A (en) * | 2018-04-13 | 2018-07-10 | 贵州雅光电子科技股份有限公司 | A kind of AMR linear transducers and its design method based on winding bias |
Also Published As
| Publication number | Publication date |
|---|---|
| US7616409B2 (en) | 2009-11-10 |
| US20060152863A1 (en) | 2006-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1838245A (en) | Magnetic sensor having a ru/si based seedlayer providing improved free layer biasing | |
| US9396742B1 (en) | Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof | |
| CN100533801C (en) | Narrow gap current perpendicular plane (cpp) magnetoresistive sensor | |
| CN100461265C (en) | Magnetoresistive sensor having an anisotropic hard bias without a buffer layer | |
| US7505235B2 (en) | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device | |
| CN100495755C (en) | Magnetoresistive sensor having an anistropic pinned layer for pinning improvement and its manufacture method | |
| CN100378803C (en) | Magnetoresistive effect element, magnetic head, and magnetic recording device | |
| US7333305B2 (en) | Magnetoresistive sensor with in-stack bias layer pinned at the back edge of the sensor stripe | |
| US7324310B2 (en) | Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping | |
| US20090155629A1 (en) | Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer | |
| US7820455B2 (en) | Method for manufacturing a tunnel junction magnetoresistive sensor with improved performance and having a CoFeB free layer | |
| CN1967893A (en) | Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor | |
| US8213132B2 (en) | Magnetic sensor having a physically hard insulation layer over a magnetic bias structure | |
| US7440243B2 (en) | Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same | |
| US7502209B2 (en) | Read sensors having nitrogenated hard bias layers and method of making the same | |
| US7397640B2 (en) | Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer | |
| US7848061B2 (en) | Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide | |
| US7259941B2 (en) | Magnetoresistive sensor having a high coercivity hard bias structure | |
| US20060044707A1 (en) | Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling | |
| CN100517466C (en) | Method for controlling magnetostriction in a free layer of a magnetoresistive sensor | |
| US20060002038A1 (en) | Pinning structure with trilayer pinned layer | |
| US7414817B2 (en) | Magnetoresistive sensor having a laminated hard magnet structure for free layer biasing | |
| US7483246B2 (en) | Magnetic sensor having a seedlayer for providing improved hard magnet properties | |
| US7573686B2 (en) | Thin-film magnetic head including low-resistance TMR element | |
| US20050213263A1 (en) | Method and apparatus for providing a current-in-plane (CIP) GMR sensor with an improved in-stack bias layer with a thinner sensor stack |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |