CN1836333A - Linear device - Google Patents
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- CN1836333A CN1836333A CN 200480023536 CN200480023536A CN1836333A CN 1836333 A CN1836333 A CN 1836333A CN 200480023536 CN200480023536 CN 200480023536 CN 200480023536 A CN200480023536 A CN 200480023536A CN 1836333 A CN1836333 A CN 1836333A
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Abstract
A linear MISFET has flexibility and softness and an advantage of enabling fabrication of an integrated circuit having an arbitrary pattern. The structure of conventional one has been so made that a source and a drain region are arranged in parallel. However, the electrical characteristic of the MISFET is determined by the channel length, and the channel length is determined by the distance along the cylindrical gate insulating region between the source and drain region. Therefore decrease of the channel length and improvement on reproducibility of the channel length has been hard. The MISFET structure of this invention is so made that the semiconductor region to serve as a channel region is sandwiched between the source region and the drain region. A control voltage is applied via the gate insulating region to the semiconductor region, thereby controlling the current flowing between the source and drain regions. The channel length is determined by the film thickness of the semiconductor region, thereby enabling decrease of the channel length and improvement on the reproducibility of the channel length.
Description
Technical field
The present invention is the linear device that a kind of thread like body MISFET forms.
Background technology
In single line, the integrated circuit that forms the linear device of circuit element and utilize linear device to make has flexibility and pliability.Can be made into various devices with arbitrary shape.The 6th figure is depicted as the stereogram that forms circuit element MISFET linear device.The section center of this element has gate electrode 201, and its outside is formed with gate insulator region 202, source area 203, drain region 204 and semiconductor region 205 in regular turn.Gate electrode 201 is applied control voltage, and the electric current that is flowed in 205 passages of the semiconductor region between Controlling Source polar region and drain region.
Summary of the invention
The problem that invention is solved:
Shown in the 6th figure among the background technology MISFET, passage length is by 204 along the source area 203 on insulation layer 202 surfaces and drain region distance L decision.Therefore, the machining accuracy of passage length depends on the source area 203 that is configured on gate electrode and the gate insulator region linear device, the position precision that reaches drain region 204.The manufacture method of wire MISFET is to be gate electrode, gate insulator region, source area, drain region and semiconductor region in the mould of the gel macromolecular material of the raw material section shape of sending into the control circuit element simultaneously, is cured after extruding, form wire then.Yet the method makes the homogeneity of passage length and reproducibility to improve because the viscosity and the coefficient of thermal expansion of gel macromolecular material are inhomogeneous.
In addition, also have gate electrode/gate insulator region, source area and drain region are formed thread like body respectively, and each thread like body binding is formed the manufacture method of constructing shown in the 6th figure.But because passage length is relevant with the positional precision of binding processing, so can't be increased to pinpoint accuracy.Therefore, any method all only can be with the passage length microminiaturization to about 1 μ m, but is difficult to further passage length be dwindled to improve high frequency characteristics and integrated level.
In order to solve the means of problem:
The present invention proposes a kind of linear device structure of being made up of MISFET, comprising: directly making progress of element region section, be provided as the membranaceous semiconductor region of channel region between source area and drain region, and semiconductor region is contacted with the generation of part of grid pole insulation layer.
The present invention (1) proposes a kind of linear device, have gate electrode, gate insulator region, source area, drain region and semiconductor region, it is characterized in that: directly making progress of element region section, in single or plural source area, and single or plural drain region between semiconductor region is set, and above-mentioned semiconductor region and part of grid pole insulation layer are produced contact.
The present invention (2) is according to foregoing invention (1) linear device, wherein gate electrode, be disposed at the side or the outside within source area and the drain region with the gate insulator fauna.
The present invention (3) is according to foregoing invention (1) or foregoing invention (2) linear device, and its center is hollow area, conductor region, gate electrode, source area, drain region, is insulation layer different with above-mentioned gate insulator region or the semiconductor region different with above-mentioned semiconductor region.
The present invention (4) is according to the linear device of foregoing invention (1) to above-mentioned invention (3), and wherein on the thread like body length direction that constitutes above-mentioned linear device, isolated area is provided with the complex elements district at interval.
The present invention (5) be according to foregoing invention (1) to the linear device of above-mentioned invention (4), wherein constitute above-mentioned linear device gate electrode, gate insulator region, source area, drain region, and the semiconductor fauna formed with the material that comprises organic semiconductor or electroconductive polymer.
The invention effect:
1. owing to the footpath of MISFET structure of the present invention at the element region section makes progress, between source area and drain region, be provided as the semiconductor region structure of passage, passage length is decided by the thickness of semiconductor region, therefore, can improve microminiaturization, reproducibility and the homogeneity of passage length.
2. if in linear device, be formed centrally hollow region, can alleviate the thread like body weight that forms linear device.If form conductor region, can reduce the electrode impedance or the distribution impedance of linear device.If form insulation layer, the electrical of a plurality of linear devices that can form easily on the thread like body completely cuts off.In addition, for example comprise the diode of forming by the PN joint (pipe) as if forming semiconductor region, can in thread like body, being formed centrally.
3. when on the length direction of linear device, forming plural MISFET, can be easy to make the integrated circuit that comprises linear device, also can improve the effect of integrated level.
4. form gate electrode, gate insulator region, source area, drain region, and semiconductor region by organic semiconductor or conductive polymer material, can reduce material cost and simplify manufacturing process, reduced manufacturing cost.
Description of drawings
The 1st (a) is depicted as linear device stereogram of the present invention to (f) figure.
The 2nd (a) and (b) figure are depicted as the thread like body stereogram of being made up of a plurality of linear devices of the present invention.
The 3rd (a) is depicted as linear device profile of the present invention to (c) figure.
The 4th (a) figure is depicted as the front elevation of linear device manufacturing installation of the present invention; The 4th (b) figure is depicted as in order to make the mould plane graph of linear device of the present invention.
The 5th figure is depicted as the electrical of linear device of the present invention.
The 6th figure is depicted as the linear device stereogram of background technology.
Description of reference numerals is as follows:
The 31-central area; 47,50,57,62-element region;
49,59,61-isolated area; The 60-source electrode draws electrode;
48, electrode is drawn in the 58-drain electrode; The 101-extruder;
102-raw material 1 container; 103-raw material 2 containers;
104-raw material 3 containers; 105,110-mould;
The 106-thread like body; The 107-roller;
108-doping treatment device; The 109-electrode forms processing unit;
5,9,15,19,29,36,45,55,85,204-drain region;
3,11,13,21,27,34,43,53,83,203-source area;
1,7,17,23,25,32,41,51,81,201-gate electrode;
4,10,14,20,28,35,44,54,84,205-semiconductor region;
2,8,16,22,26,33,42,52,82,202-gate insulator region;
6,12,18,24,30,37,46,56,86,206-surface protection district.
Embodiment
Below will explain at the best kenel of implementing of the present invention, and clear and definite word definition of the present invention.And be the content of Japanese patent application case 2002-131011 specification, and can incorporate in this specification together as the basis of priority of the present invention.In addition, claim of the present invention is not limited to following best kenel (structure, shape and material etc.).
Said " diametric(al) in the element region section " is meant the direction that is played the outside by the section center of linear device.
Said " single or plural source area with single or plural drain region between " be meant by the section center of linear device to single or plural source area with extremely the distance between the single or plural drain region is different, (promptly between this distance semiconductor region can be set).At this, if when having plural source area and drain region, to preferably identical with the interregional distance of kind, but all or part of similar interregional distance also can be different by the center.In addition, if when having plural source area and drain region, arbitrarily source area or drain region and corresponding source area or drain region can be same radially also can be Different Diameter to.
(linear device structure)
At first, the concrete example shown in the contrast figure is to explain linear device structure of the present invention.
First concrete example
The 1st (a) figure is the linear device stereogram of first concrete example.Being configured to of the linear device of the present invention's first concrete example; be the center in the linear device section, dispose the surface protection district 6 of gate insulator region 2, source area 3, semiconductor region 4, drain region 5 and insulating properties towards its lateral direction in regular turn with wire gate electrode 1.And, also source area 3 can be divided into a plurality of thread like bodies, part of grid pole insulation layer 2 is produced with semiconductor region 4 contact.
(effect of wire MISFET)
When gate electrode was applied grid voltage, under above-mentioned gate insulator region and situation that semiconductor region contacts, above-mentioned grid voltage can act on semiconductor region.
When N type MISFET, current potential with semiconductor region is a benchmark, when being applied positive gate voltage, can put aside gate electrode the electronics of conductive carrier in the semiconductor region, improved conductivity, and the grid voltage that can apply gate electrode is controlled the electric current that flows between source area and drain region as semiconductor region between the source area of passage and drain region.
When P type MISFET, current potential with semiconductor region is a benchmark, when gate electrode is applied negative-gate voltage, can put aside the hole (hall) of conductive carrier in the semiconductor region, improved conductivity, and the grid voltage that can put on gate electrode is controlled the electric current that flows between source area and drain region as the semiconductor region between channel source polar region and drain region.
Shown in W among the 1st (a) figure, the channel width of MISFET is decided by the length of the length direction of the thread like body that forms linear device.On the other hand, the passage length of MISFET is among the 1st (a) figure shown in the L, and it is decided by the thickness of semiconductor region 4.Therefore, the machining accuracy of passage length depends on the machining accuracy of the thickness (being the distance between source area and the drain region) of semiconductor region 4.No matter be to extrude the pasty state macromolecule with the manufacture method that forms linear device or the binding thread like body is to form the manufacture method of linear device, in technical background, the thread like body configuration precision of the machining accuracy of thickness and decision passage length precision compares, its precision can be brought up to 10 times to 1000 times.Therefore, linear device of the present invention can improve granular, reproducibility and the homogeneity of passage length.
About constituting each regional position relation of linear device of the present invention, except that first concrete example, several variation examples are arranged still.In first concrete example the effect to linear device be described, and the effect of the linear device of the present invention in following other concrete examples also is same as first concrete example.
Second concrete example
The source area of second concrete example is different with first concrete example with the configuration of drain region.
The 1st (b) figure is the linear device stereogram of first concrete example.The linear device of the present invention's first concrete example is by following configuration.The center of its linear device section is a wire gate electrode 7, is gate insulator region 8, drain region 9, semiconductor region 10, source area 11 and insulating properties surface protection district 12 in regular turn towards the direction in its outside.And, because drain region 9 is divided into a plurality of thread like bodies, part of grid pole insulation layer 8 is produced with semiconductor region 10 contact.
The 3rd concrete example
The linear device structure system of first concrete example and second concrete example is configured in side within source area and the drain region with gate electrode and gate insulator region; And the linear device structure of the 3rd concrete example and the 4th concrete example system is disposed at gate electrode and gate insulator region in the outside of source area and drain region.
The 1st (c) figure is depicted as the linear device stereogram of the 3rd concrete example.The 3rd concrete example linear device of the present invention is by following configuration; its linear device section center is linear source polar region 13, towards its lateral direction be configured in regular turn semiconductor region 14, drain region 15, gate insulator region 16, gate electrode 17, with insulating properties surface protection district 18.And, drain region 15 is divided into a plurality of thread like bodies, the gate insulator region 16 of part is contacted with semiconductor region 14 generations.
The 4th concrete example
The source area of the 4th concrete example is different with the 3rd concrete example with the configuration of drain region.
The 1st (d) figure is depicted as the linear device stereogram of the 4th concrete example.The 4th concrete example linear device of the present invention is by following configuration; the heart is the drain region 19 of wire among its linear device section, towards the direction in its outside in regular turn configuring semiconductor district 20, source area 21, gate insulator region 22, gate electrode 23, with insulating properties surface protection district 24.And, source area 21 is divided into a plurality of thread like bodies, the drain electrode insulation layer 22 of part is contacted with semiconductor region 20 generations.
The 5th concrete example
The 5th concrete example and the first concrete example difference are drain region and discontinuous single area, but are divided into a plurality of zones.
The 1st (e) figure is depicted as the linear device stereogram of the 5th concrete example.The present invention's the 5th concrete example linear device is by following configuration; the center of its linear device section is the gate electrode 25 of wire, towards the direction in its outside be in regular turn gate insulator region 26, source area 27, semiconductor region 28, drain region 29, with insulating properties surface protection district 30.And, source area 27 is divided into a plurality of thread like bodies, part of grid pole insulation layer 26 is produced with semiconductor region 28 contact.
Then, further cut apart drain region 29, the overlapping region of itself and source area 27 is reduced.So, because of reducing source electrode.Parasitic capacitance between drain electrode is so can make the circuit running high speed that is constituted with linear device.This way only is not applicable to first concrete example, and second concrete example to the, four concrete examples also can carry out cutting apart of source area and drain region, reduces source electrode with same acquisition.The effect of parasitic capacitance between drain electrode.
The 6th concrete example
The difference of the 6th concrete example and first concrete example is: in the configuration center zone, thread like body center that forms linear device.
The 1st (f) figure is depicted as the stereogram of the 6th concrete example linear device.The linear device of the present invention's the 6th concrete example is by following configuration; the center of its linear device section is central area 31, towards the direction in its outside be in regular turn gate electrode 32, gate insulator region 33, source area 34, semiconductor region 35, drain region 36, with insulating properties surface protection district 37.And, source area 34 is divided into a plurality of thread like bodies, part of grid pole insulation layer 33 is produced with semiconductor region 35 contact.
Central area 31 can alleviate the thread like body weight that forms linear device if form hollow region.If form conductor region, can reduce the electrode impedance or the distribution impedance of linear device.If form insulation layer, the plural linear device that forms on thread like body carries out electrically isolated easily.In addition, if form semiconductor region, in the center of thread like body, can form the diode that engages with PN.This way only is not applicable to first concrete example, and second concrete example to the, four concrete examples also can obtain same effect in the thread like body center configuration by the formed central area of above-mentioned material.
The number of cutting apart about source area with cut zone or drain region, be to be described in 4 o'clock only in first concrete example to the, six concrete examples to cutting apart number, and have as 2,3,5 ... wait other to cut apart the several source areas or the MISFET of drain region, the present invention also can obtain same effect.
(extraction electrode)
The method that the gate electrode of linear device of the present invention, source area, drain region, semiconductor region and external circuit are done to electrically connect is, can splicing ear be set in each zone, end of the thread like body that forms linear device, is connected with external circuit.In addition, also can pick out splicing ear by the thread like body side with the part of thread like body that forms linear device as the extraction electrode district.
(plural linear device)
In single line shape body, can form plural linear device.For electrical isolation element region and other element areas, preferably between element area, form isolated area.
Owing to be formed centrally plural linear device in the thread like body, can make the integrated circuit of forming by linear device easily, and improve integrated level.If when on the length direction of linear device, forming plural MISFET,, can form the plural MISFET integrated circuit of common gate electrode easily at the center configuration gate electrode.Equally, at the center configuration source electrode, can form the plural MISFET integrated circuit of common source electrode easily.In addition, at the center configuration drain electrode, can form the plural MISFET integrated circuit of common drain electrode easily.
The linear device that is formed in the thread like body not only forms MISFET, can form as active members such as two-carrier electric crystal, JFET, SIT, also can form the passive device of diode, capacitor, impedance etc.In addition, also can form photo-electric conversion elements such as light-emitting component, display element, photocell, OPTICAL SENSORS.
The 2nd (a) and (b) figure are depicted as the thread like body stereogram of being made up of a plurality of linear devices of the present invention.
Be in single line shape body, to form 2 identical linear devices of linear device cross-section structure, shown in the 2nd (a) figure with identical shown in the 1st (a) figure.In element region 47, form first linear device, in element region 50, form second linear device.50 formed extraction electrodes 48 of element region 47 and element region are with drain region 45 electric connections of first linear device.The gate electrode of first linear device, source area electrically connect with the gate electrode of second linear device, source area respectively.In addition, drain region and semiconductor region are electrically isolated by isolated area 49.
The 3rd (a) figure is the element region thread like body profile of 47 linear device shown in Fig. 2 (a).At center configuration gate electrode 81, towards the direction in its outside dispose in regular turn gate insulator region 82, source area 83, semiconductor region 84, drain region 85, with surface protection district 86.
The 3rd (b) figure is the thread like body profile of the extraction electrode 48 of the 2nd (a) figure, linear device.At center configuration gate electrode 81, towards its lateral direction dispose in regular turn gate insulator region 82, source area 83, semiconductor region 84, with drain region 85.The surface of extraction electrode 48 does not cover insulating properties surface protection district, so can be electrically connected drain region 85 by the thread like body side.
The 3rd (c) figure is the thread like body profile that blocks the isolated area 49 of the 2nd (a) figure linear device.In center configuration gate electrode 81, towards its lateral direction dispose in regular turn gate insulator region 82, source area 83, with surface protection district 86.Because surface protection district 86 has insulating properties, so but semiconductor region, the drain region of electrical isolation first linear device and second linear device.
The 2nd (b) figure is the example that forms drain electrode extraction electrode and source electrode extraction electrode at the wire body side surface.In the thread like body, form first linear device, form second linear device at element region 62 at element region 57.The drain region of the drain electrode extraction electrode 58 and first linear device electrically connects, and the source area of the source electrode extraction electrode 60 and first linear device electrically connects.Drain electrode extraction electrode 58 is electrically separated by isolated area 59 with source electrode extraction electrode 60.
(linear device material)
When linear device was N type MISFET, gate electrode can be formed by the semi-conducting material or the conductive material of P type or N type.Semiconductor region can be formed by the P type semiconductor material.Source area and drain region can be formed by N type semiconductor material or conductive material.In addition, gate insulator region and surface protection district can be formed by the insulating properties material.
When linear device was P type MISFET, gate electrode can be formed by P type or N type semiconductor material or conductive material.Semiconductor region can be formed by the N type semiconductor material, and source area and drain region can be formed by P type semiconductor material or conductive material.In addition, gate insulator region and surface protection district can be formed by the insulating properties material.
As semi-conducting material, the conductive material of linear device of the present invention, then preferred organic semiconductor or conductive polymer material.Owing to use organic semiconductor or conductive polymer material, can reduce material cost and simplified manufacturing technique, so can reduce manufacturing cost.
Conductive polymer material for example uses polyacetylene class, coalescence benzene (poly acene) class, polythiophene class, poly-(3-alkylthrophene), few thiophene, polypyrrole, polyaniline, polyhenylene class etc.When selecting these electrodes or semiconductor layer material, should consider factors such as conductance.Conductive polymer material should preferably use fullerene or mix fullerene.Preferred Cn (n=60-90) in the fullerene.The interior bag atom of interior bag fullerene is Na, Li, H, N, F etc. preferably.
The preferable use of organic semiconducting materials polyparaphenylene class, polythiophene class, poly-(3 methyl thiophene), poly-fluorenes (fluorene) class, Polyvinyl carbazole (vinylcarbazole) etc.
Have again, can use the material that in above-mentioned semi-conducting material, adds dopant as source electrode, drain material or semiconductor region material.
In order to become N type semiconductor, but alkali doped (Li, Na, K), AsF5/AsF3, ClO4-.
In order to become P type semiconductor, the halogen that can mix (Cl2, Br2, I2 etc.), lewis' acid (PF5, AsF6, SbF6), Bronsted acid (HF, HCl, HNO3 etc.), transistion metal compound (FeCl3, FeOCl, TiCl4 etc.), electrolytic anion (Cl-, Br-, I-etc.) etc.
In addition, the insulating properties material that constitutes the gate insulator region of linear device of the present invention can use for example PVDF (sulfonation gathers difluoroethylene), PS (polystyrene), PMMA (polymethyl methacrylate), PVA (polyvinyl alcohol) etc.
And the insulating properties material in the surface protection district of formation the present invention's linear device can use for example PVDF (sulfonation gathers difluoroethylene), PS (polystyrene), PMMA (polymethyl methacrylate), PVA (polyvinyl alcohol), PC (Merlon), PET (poly terephthalic acid diethylester), PES (polyether sulfone) etc.
(manufacturing installation, manufacture method)
The front elevation of linear device manufacturing installation of the present invention shown in the 4th (a); Shown in the 4th (b) figure in order to make linear device mould plane graph of the present invention.
The effect of the material container 102,103,104 in the single lead screw ex truding briquetting machine 101 is that a plurality of zones are remained on molten condition, dissolved state or colloid state with raw material.The 4th (a) is though represented 3 material containers among the figure, the present invention also can do suitable change according to the structure of the linear device of manufacturing.
Raw material in the material container 102 is sent to mould 105.The corresponding formation extrusion modling of the linear device section hole of mould 105 and institute's desire making.Be rolled onto roller 107 or keep the wire former state as required and deliver to subsequent processing by penetrating the thread like body that penetrates in the hole.
In material container 102,103,104, respectively gate material, gate insulator region material, source electrode, drain material and semi-conducting material be housed.In container, all keeping fusion or dissolved state, colloid state.In addition, be formed with hole on the mould 105, connect each material container.
Shown in the plane graph of the 4th (b) figure, have at mould 105 centers to squeeze out a plurality of holes that grid material is used.Form the plural hole that the gate insulator region material penetrates usefulness in the outside.And then form the plural hole that source electrode, drain material, semi-conducting material penetrate usefulness again in its periphery.But, in mould 105 in order to squeeze out the plural hole that disposes with the corresponding material of circuit region, can do suitable setting according to the cross-section structure of the linear device of actual manufacturing.Need often not dispose grid material ejaculation hole at central part.
The raw material that is in fusion, dissolved state or colloid state in each material container is delivered in the mould 105, and when squeezing out raw material by mould, raw material is penetrated by each hole and solidifies.Extracted by the other end, form wire, continuous, wire light-emitting component, volume is delivered on 107 rollers again.Or keep the wire former state as required to subsequent processing.
The formation of extraction electrode: contact with extraction electrode in order to make source area, drain region, before forming electrode, remove the part semiconductor district with mechanicalness processing or etching methods such as (etching).Form in the processing unit 109 at electrode, for example optionally carry out the coating of electric conductive polymer or the evaporation of Al, to form extraction electrode.
The formation in surface protection district: though also not shown among the 4th figure, coating insulating properties material handling device can be set as required, coating forms insulation layer on the thread like body surface that forms linear device.
The formation of isolated area: with methods such as mechanicalness processing or etchings, optionally remove part desire isolated conductivity district or semiconductor region, form the isolated area part.Form insulation layer in the zone coating of removing.In addition, also can in doping treatment device 108, inject oxonium ion, heat, to form the insulation isolated area.
(shape of linear device)
The external diameter of linear device of the present invention is preferably below the 10mm, more preferably below the 5mm, again more preferably below the 1mm, more preferably below the 10 μ m.Since extend processing, can be with reduced diameter to 1 μ m or below the 0.1 μ m.
When extrusion molding goes out to have the superfine thread like body of the following external diameter of 1 μ m in by the hole of mould, produce the obstruction of hole and the problems such as fracture of thread like body sometimes.At this moment, at first form each regional thread like body.Then, make a lot of islands as the island with this thread like body, (sea) available soluble substance surrounds around it, and its joint with the rotation shape is connected, and is penetrated by small holes as one thread like body.When the composition on island increases the composition minimizing in sea, can produce superfine thread like body element.Other method is to make thicker thread like body element earlier, extends on the direction of length again.In addition, also melt and dissolved raw material can be carried out molten stream by jet-stream wind, and form superfine thread like body.
Moreover, can make the flat shape ratio be called any numerical value by extrusion molding, when utilizing the defence line, be preferably more than 1000 as traditional thread binding.For example can be 100000 or more than.When after cut-out, using, can become below 10～10000,10, below 1 or below 0.1.Linear device as subsection uses.
The section shape of linear device is not limited to certain given shape.For example be shapes such as circle, polygon, star.In addition, also can be the polygon that a plurality of drift angles are acute angle.And each regional section is an arbitrary shape.When thinking the contact-making surface of enlarged elements and adjoining course, be preferably the polygon that drift angle is an acute angle.In addition, when making section shape become required shape,, can easily realize as long as make the shape of extruding mold consistent with this required form.When outermost section is made star or drift angle and is the shape of acute angle, behind extrusion molding, in the space between each drift angle, can insert other any materials, can change the characteristic of element according to the element purposes by dipping.
Form Line of light electric transition elements such as light-emitting component, display element, photocell, OPTICAL SENSORS simultaneously at the thread like body that forms linear device of the present invention, the section of linear device is formed shapes such as polygon, star, crescent, petal-shaped, literal shape and increase surface area, the surface area of photo-electric conversion element also strengthens thereupon, improves photoelectric conversion result.
Embodiment:
Below enumerate an embodiment, so that the present invention is done more detailed description, but the present invention is not limited to the following example.
Production Example
The embodiment system of the present invention's linear device is an example with the linear device of the structure shown in the 1st (a) figure, and promptly the center is a gate electrode, disposes the structure of gate insulator region, source area, semiconductor region, drain region and insulation layer in regular turn towards the direction in its outside.
(formation of gate electrode)
The material of gate electrode line uses the made MEH-PPV of Aldrich (poly-(3-hexyl hexyl thiophene)).In the 300ml beaker, prepare MEH-PPV toluene solution (10wt%), add the iodine liquid of 50ml again, stir with the ultrasonic waves blender.
(formation of gate insulator region)
After the gate electrode line being soaked in the dimethyl amide solution of polyvinylidene chloride of 1wt%, it is dry to carry out the universe under 80 ℃, forms the thick polyvinylidene chloride layer of 1 μ m on gate electrode line surface.
(formation of source area)
In the beaker of 300ml, prepare MEH-PPV xylene solution (10wt%), add the iodine liquid of 50ml again, carry out ultrasonic waves afterwards and stir.Thereafter it is dry to carry out the vacuum universe, forms the film like solid.This film like solid is cut into diameter for after counting mm, go out, form diameter and be about the fibrous of 0.2mm with the MEH-PPV line pressure of fusion extruder (well unit makes made) with cutting.Produce 4 of the fibers of the about 10cm of length.
Be formed with on the surface on the gate electrode line of gate insulator region, dispose 4 MEH-PPV lines with as source area.The end of line is fixed with epoxy adhesive.Thereafter in nitrogen, carry out 1 hour heat treated under 200 ℃ of temperature, gate insulator region and 4 root polar regions are connected airtight.
(formation of semiconductor region)
With the surface be formed with state in the toluene solution that thread like body is soaked in P3HT on the source area after, the universe that carries out 24 hours under nitrogen, 80 ℃ environment is dry.
(formation of drain region)
In the beaker of 300ml, prepare MEH-PPV xylene solution (10wt%), add the iodine liquid of 50ml again, carry out ultrasonic waves afterwards and stir.Thereafter it is dry to carry out the vacuum universe, to form the film like solid.This film like solid is cut into after diameter counts mm, and the MEH-PPV line pressure that will cut with fusion extruder (well unit makes made) goes out, and the about 0.2mm's of formation diameter is fibrous.Produce 4 of the fibers of the about 10cm of length.
Forming on the thread like body of semiconductor layer the single of the 3HT composition that dispose 4 diameters be 0.2mm.The end of line is fixed with epoxy adhesive., in nitrogen in, 200 ℃ temperature under carry out 1 hour heat treated, insulation layer and 4 drain regions are connected airtight thereafter.
(formation in surface protection district)
After the thread like body that forms the drain region being soaked in the dimethyl amide solution (5wt%) of PMMA (polymethyl methacrylate), the universe that carries out 24 hours in nitrogen is 80 ℃ environment is dry, to finish the making of linear device.
The determination test of electrical characteristics
It is 2mm that the fiber of the formed linear device of above-mentioned Production Example is cut into microscler its channel width W.Gate electrode, source area, drain region, semiconductor region to the end are adorned the line of gilding, and supporting in the darkroom.The drain current characteristics of coming the slotted line linear element with semiconductor parameter determinator (Agilent made 4155).
The 5th figure is the drain current of measurement and the graph of a relation of drain voltage.Grid voltage is set at 4V and 10V, drain voltage is changed by between-5V to 10V, measure drain current.With the current potential and the source area potential setting of semiconductor region is equipotential, and connects earthing potential.Grid voltage increased drain current when the result showed positive voltage increases, and the linear device of making system operates with N type MISFET.
Profit on the industry:
Since MISFET structure of the present invention for directly the making progress of element region section, in source area and drain region Between be provided as the semiconductor region structure of passage, passage length is decided by the thickness of semiconductor region, therefore, can Improve granular and repeatability and the homogeneity of passage length.
2. if in linear device, be formed centrally hollow region, can alleviate the thread like body weight that forms linear device. If the formation conductor region can reduce electrode impedance or the distribution impedance of linear device. If the formation insulation layer can hold The electrical of plural linear device that easily is formed on the thread like body completely cuts off. In addition, if form semiconductor region, Can among thread like body, be formed centrally the diode that for example comprises the PN joint.
3. when the length direction of linear device forms plural MISFET, can be easy to make by the linear device group The integrated circuit that becomes, and can increase integrated level.
By the material that comprises organic semiconductor or electroconductive polymer form gate electrode, gate insulator region, Source area, drain region, and semiconductor region, because having reduced material cost and having simplified manufacturing process, therefore can Reduce manufacturing cost.
Claims (5)
1. a linear device is characterized in that, at the linear device with gate electrode, gate insulator region, source area, drain region and semiconductor region.Footpath at the element region section makes progress, and between single or plural source area and single or plural drain region semiconductor region is set, and above-mentioned semiconductor region is contacted with the generation of part of grid pole insulation layer.
2. linear device according to claim 1, wherein gate electrode, be configured in the side or the outside within source area and the drain region with gate insulator region.
3. linear device as claimed in claim 1 or 2, its center are hollow region, conductor region, gate electrode, source area, drain region, the insulation layer different with above-mentioned gate insulator region, or the semiconductor region different with above-mentioned semiconductor region.
4. as claim 1 to 3 linear device as described in each, wherein on the length direction of the thread like body that constitutes above-mentioned linear device, isolated area is provided with the complex elements district at interval.
5. as each described linear device of claim 1 to 4, constitute above-mentioned linear device gate electrode, gate insulator region, source area, drain region, and semiconductor region be to comprise that organic semiconductor or conductive polymer material are formed.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003294807 | 2003-08-19 | ||
| JP294807/2003 | 2003-08-19 | ||
| JP321027/2003 | 2003-09-12 |
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| Publication Number | Publication Date |
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| CN1836333A true CN1836333A (en) | 2006-09-20 |
| CN100487907C CN100487907C (en) | 2009-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200480023536XA Expired - Fee Related CN100487907C (en) | 2003-08-19 | 2004-08-19 | Linear device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254938A (en) * | 2010-10-21 | 2011-11-23 | 友达光电股份有限公司 | Thin film transistor, pixel structure and circuit structure with the same |
| CN101783365B (en) * | 2009-01-15 | 2014-01-22 | 原子能委员会 | Transistor with wire source and drain |
| CN105244438A (en) * | 2015-10-13 | 2016-01-13 | 东北师范大学 | Linear organic single crystal field effect transistor capable of being woven and fabrication method and application thereof |
-
2004
- 2004-08-19 CN CNB200480023536XA patent/CN100487907C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101783365B (en) * | 2009-01-15 | 2014-01-22 | 原子能委员会 | Transistor with wire source and drain |
| CN102254938A (en) * | 2010-10-21 | 2011-11-23 | 友达光电股份有限公司 | Thin film transistor, pixel structure and circuit structure with the same |
| CN102254938B (en) * | 2010-10-21 | 2013-07-31 | 友达光电股份有限公司 | Thin film transistor, pixel structure and circuit structure with the same |
| CN105244438A (en) * | 2015-10-13 | 2016-01-13 | 东北师范大学 | Linear organic single crystal field effect transistor capable of being woven and fabrication method and application thereof |
| CN105244438B (en) * | 2015-10-13 | 2017-11-17 | 东北师范大学 | One kind can weave wire organic single-crystal field effect transistor and preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100487907C (en) | 2009-05-13 |
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