CN1831960A - Method of recording memory - Google Patents
Method of recording memory Download PDFInfo
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- CN1831960A CN1831960A CNA2005101370613A CN200510137061A CN1831960A CN 1831960 A CN1831960 A CN 1831960A CN A2005101370613 A CNA2005101370613 A CN A2005101370613A CN 200510137061 A CN200510137061 A CN 200510137061A CN 1831960 A CN1831960 A CN 1831960A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00456—Recording strategies, e.g. pulse sequences
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2407—Tracks or pits; Shape, structure or physical properties thereof
- G11B7/24085—Pits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2407—Tracks or pits; Shape, structure or physical properties thereof
- G11B7/24085—Pits
- G11B7/24088—Pits for storing more than two values, i.e. multi-valued recording for data or prepits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/006—Overwriting
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- Optical Recording Or Reproduction (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Methods of writing information to an optical memory device. The methods comprise the step of writing a mark to the active material of the optical memory device by irradiating the material with an applied energy source. In one embodiment, the applied energy source provides a plurality of energy pulses. In another embodiment, energy in excess of that required to form a mark is released and dissipated in a manner that minimizes mark enlargement, spurious mark formation, recrystallization and back crystallization. The methods are effective to provide better cooling characteristics through enhancement of the capacitive cooling contribution.
Description
This case is that application number is dividing an application of 01822773.2 Chinese patent application.
Quoting of related application
The application is that David Tsu submits to, sequence number is No.60/258078, filing on Dec 22nd, 2000, is entitled as the finishing of U.S. Provisional Application (its disclosure is combined in herein by reference) of " record storage method ".
Invention field
The present invention relates to the multi-level recording of recording optically memory storage and phase transformation optical storage.
Background of invention
Phase-change optical recording medium adopts the material that reversible construction changes can take place between amorphous state and crystalline state.Variation between these states is subjected to " active material " exposure control to the focused laser energy of different stage.Generally comprise such as Ge at the commercial active material that can buy with this ability
xSb
yTe
zSbTe eutectic Deng alloy and modification.This optical devices generally are designed to when active material is in amorphous phase, and it is low when being in crystalline phase to install measured luminance factor, and for example, the mark of amorphous writes on the session of crystallization.The usage of this technology tradition is to come record data by the frequency that changes mark (amorphous phase region) simultaneously and length and the frequency and the length that change the interval (crystalline region) that mark is separated.When taking place to change, for example, when the amorphous area of session changed crystalline region (or opposite) into, just can define changeed a logical one.If in a timing cycle, do not change, then can define a logical zero.Adopt this scheme, importantly, no matter mark length, it is constant that its width must keep.If attempt to allow when writing long mark medium be exposed to other laser of firm power level, then the heat energy that gathers in the ablation process is not that the width that causes mark constantly increases, and makes mark crystallization more exactly.Therefore, the foundation of mark may relate to other modulation of laser power level, that is introduces the modulation of " cooling " number of times.When taking the write-in policy of a kind of similar CD-RW, laser power modulation is between two level: 0.5 and 1.0mW between low (L) and 8 and 12mW between height (H).For be operated in nominal speed " 2X " (=CD under 2.4m/s), wavelength is that 780nm and digital aperture (NA) they are 0.55, timing cycle (T) is 115.5ns.Minimum being marked among the time span 3T writes, and the longest being marked among the time span 14T writes.The following modulator approach of NT mark utilization writes: 1TH+ (N-1) (0.5TL+0.5TH).In this case, the narrowest used laser pulse width is 0.5T, that is 58ns.This traditional Write strategy just relates to two levels of reflectivity (crystallization is for high, and amorphous is low), so be called two-level recording.
Attempt to increase the density of data storage, make it to surpass above-mentioned traditional two-stage approach, envision a kind of multi-level recording strategy.When adopting this method, set up the mark of " fixing " length and width with such method, the reflectivity of make measuring has a plurality of ranks, that is by the possible minimum reflectivity of " pure " amorphous phase definition and between by the possible high reflectance of " pure " crystalline phase definition Anywhere.For example, see the U.S. Patent No. 5148335 that on September 15th, 1992 was authorized people such as Kudo, by reference it is attached to herein.Disclosed hereinly be, utilize the multistage optical recording strategy of the mark of constant magnitude and variable density, mark is placed between the space.
Although the write-in policy of Kudo is feasible in theory, the write-in policy of describing during it is open is considered to unpractiaca, because many problems occur when the type that writes shown in it.For example owing to a large amount of mark crystallizations again, the negative edge of mark often resolution is limited.This in plane X Y direction and cross section XZ direction all clearly.And the finite resolving power at this edge itself has limited the shake of the signal that is write down.Because this " soft " edge, the result has run into difficulty as the mark edge detection of retaking of a year or grade strategy.This dependence has caused extra problem in real world, even the reflectivity of promptly original session (that is not containing mark) is often owing to the changeability that usually relevant with CD bending focusing and tracking problem cause centers on often generating period variation of CD (that is when it rotates).
Have report to point out a kind of write-in policy that designs for some defective that overcomes such as the write-in policy of Kudo etc., it is the localized heat environment that utilizes lot of energy or high heat load to suppress will to write mark, forms mark.Suppress with high heat budget that the localized heat environment can make the part of mark and the part crystallization again of the mark that write in the past.Although it is reported that this write-in policy can provide the density higher data to store, may too enlarge by the size of suppressing the localized heat environmental labelling, cause the obvious cross-talk between the different sessions.
Summary of the invention
The present invention is by providing a kind of such mark that utilizes, and promptly each mark all forms by applying a plurality of energy pulses to described medium, and information is recorded in method on the variable optical record medium of state, overcomes above-mentioned and other defective.Described pulse has effective width and amplitude, allow to have at least 50% in the mark forming process capacitive cooling of (preferably at least 55%).
In another aspect of this invention, each mark can form by apply the short a plurality of energy pulses of pulse width to described medium.When adopting short pulse, suitable pulse width can be by the thermal time constant of device and/or the decision of crystalline rate again of phase-change material.Each pulse width is preferably less than 14 nanoseconds.
By making capacitive cooling maximization or a plurality of pulses by utilizing pulse width to lack, have 3 things to become possibility: (1) mark shape can independently be controlled; (2) no matter grain shaped becomes can both reach highly coincidence in the plane or on thickness direction; (3) the suffered influence of mark that writes before is reduced to minimum even is zero.
Mark shape can be finished in several ways.The precision form of mark can be by the amplitude (power) of adjusting each pulse and the length (width) of adjusting each pulse, and each mark utilizes two (or a plurality of) pulses to finish.Mark is shaped and can also reaches by the cycle of adjusting between the pulse.The decision that pulse is adjusted can be based on the physical length of (i) data cell; Linear session speed when (ii) CD moves; The (iii) actual pulse number that requires of each mark; The (iv) minimum widith of mark.
According to another aspect of the present invention, provide a kind of multi-level recording strategy.In the multi-level recording strategy, mark provides plural record rank.In the multi-level recording strategy, each mark can utilize a plurality of energy pulses to form.In one embodiment, pulse characteristic is selected to such an extent that allow at least 50% capacitive cooling.In another embodiment, strobe pulse, make it have short pulse width (that is, preferably less than about 14 nanoseconds).One preferred aspect, the multi-level recording device has the uniform data cell of a plurality of sizes that are predetermined, wherein the mark of each formation is all providing in corresponding data cell fully.Mark can write with the method for avoiding changing or obviously change the mark of other data cell.Its another preferred aspect, the label record rank can be differentiated by the width by mark, and keeps the length substantial constant of mark simultaneously.
According to another aspect of the present invention, a kind of low heat budget Write strategy is provided, design comes the crystallization again of the formation of the increase of mark, false mark, mark and reverse crystallization are reduced to minimum.The low heat budget strategy provides a kind of and reduces to minimum forming the required excess energy of mark, with the impregnable method of mark integrality these superfluous energy that dissipate.
Thereby make the effect of capacitive cooling and/or the benefit of low heat budget strategy improve the formation of mark by utilizing according to Write strategy of the present invention, so that reduce cross-talk and shake minimized.
The invention provides a kind of method that the optical phase change material is write down, said method comprising the steps of: form mark by applying a plurality of energy pulses to described phase-change material, each described pulse has the pulse width less than 14 nanoseconds.
The present invention also provides a kind of method that information is recorded on the optical record medium that comprises phase-change material, said method comprising the steps of: the energy that applies the tool spatial distribution map to described phase-change material, described spatial distribution map defines the space overlap zone of described energy and described phase-change material, described energy provides the temperature profile in the described space overlap zone, described temperature profile defines the space distribution of temperature, and described space distribution comprises the temperature of the part of phase-change material described in the described space overlap of the fusing zone; Form the mark that overlaps with the described melt portions of described phase-change material, described mark comprises amorphous phase, and described amorphous phase forms when the regional cooling of described space overlap, and described cooling discharges the excess energy that surpasses the described amorphous phase of formation institute energy requirement; Described phase-change material beyond the area of space that overlaps with the described mark described excess energy that partly dissipates does not form amorphous phase and carries out described dissipation in the described part beyond the described mark.
In order more completely to understand the present invention, with reference to the following detailed description and accompanying drawing.
Brief description of drawings
Fig. 1 is the decomposition view that has the plan view that the light that writes down session coils mutually and have a plurality of marks that form according to method of the present invention; And
Fig. 2 is the synoptic diagram of describing to utilize according to method heating and cooling storage medium of the present invention.
Detailed description to preferred embodiment
Embodiment according to a recommendation, the invention provides a kind of by forming a series of distinguishable marks, each mark all forms with a plurality of energy pulses that at least 50% capacitive cooling can effectively be provided, and information is recorded in method on the variable optical record medium of state.According to the embodiment of another recommendation, the invention provides a kind of with design make that mark increases, the formation of false mark, again crystallization and oppositely crystallization reduce to minimum low heat budget strategy, the method for information recording carrier on the variable optical record medium of state.
The variable optical record medium of state can be to have can respond such as the input of beam energy, electric energy or the heat energy homenergic of projection to change into any device of the storage medium of second state from first state.
The ablative phase change disc of the best right and wrong of optical record medium that state is variable.Phase change disc can be to make to have several layers, comprises for example CD of the type of protective seam, reflection horizon, last insulation course, active layer or phase change layer, following insulation course and compact disc substrate.Phase change disc also can dispose or layering with other method, and wherein each layer plays control reflectivity, heating and cooling and heat distribution.
Optical recording apparatus has variable data storage medium of state or active material.The variable data storage medium of state is any possibility of reversal material that can change state according to the input of energy, such as chalcogenide material or phase-change alloy.State variable data medium for storing can provide with any suitable form, comprise phase-change material discrete individual layer, optical modulation multilayer or be suitable for any other form of storing data.The data storage medium is phase-change thin film preferably.Phase-change material preferably includes to be selected from and comprises Te, Ge, Sb, Se, a kind of element that In and Ag are a group or the combination of several elements.The phase-change material of recommending comprises that Te and Sb are the chalkogenide Ge of main component
xSb
yTe
z, Ag
wIn
xSb
yTe
zDeng.For other example that can be applied to phase-change material of the present invention, referring to U.S. Patent No. 5912104; 4653024; 4820394; 4737934; 4710899; 5912104; 5128099 and 5936672.It openly is combined in herein by reference.
Phase-change material (should be used as the data of optical disk storage medium) generally have crystalline state and an amorphous state.The data storage material generally in manufacture process deposit become amorphous state, and be initialized as crystalline state, prepare record.Then by forming a series of amorphous mark data recording or be stored on the phase change medium.
So data are by being recorded on the phase change recording medium at a series of marks of formation on the medium.In general, mark can be any distinguishable mark that forms on phase change recording medium.The best right and wrong of mark are ablative, and for recorded information or data provide means, these information and data can be read from phase-change optical recording medium by the variation of detection of reflected rate.In phase change medium, mark can form the amorphous areas at least in part of phase-change material, and mark is amorphous state basically fully.
Mark can utilize any suitable energy to form, and comprises laser, inductance heating element, stratie etc.Mark preferably utilizes such as light energy source such as laser and forms.According to one aspect of the present invention, each mark can form by apply two energy pulses to optical record medium at least.The shape of each mark can be controlled by adjusting pulse parameter.For example, the duration (width) of the amplitude of each pulse (power) and/or each pulse and/or the cycle between the pulse can be adjusted to change whole parameters of mark shape.Suitably adjust these pulse parameters, just can form the mark that width is even or width is tapered.Selected suitable pulse parameter can depend on the physical length of the mark that (i) will write at least in part; Session linear velocity when (ii) CD moves; The (iii) actual pulse number that requires of each mark; The (iv) minimum widith of mark.
Although do not wish to be bound by theory, it is believed that the cooling behavior of optical record medium has several different components.One-component is relevant with thermal energy conduction (that is resistive) the stream component that cools off comparatively slowly.This resistive component is called " conduction cooling " here.Another component is to store relevant comparatively faster component with the capacitive (that is resistance) of heat energy.This reactive component is called " capacitive cooling " here.Several Factors is depended in the cooling behavior of optical medium (that is relative populations of conduction cooling and capacitive cooling).For example, the intrinsic characteristic of medium-that is the characteristic and the structure of optical record medium itself depended in the cooling behavior.Material behavior comprises the specific heat of temperature conductivity and optical record medium.External factor is also depended in the cooling behavior, that is how optical energy is added on the medium.For example, the parameter of the energy that puts on medium is depended in the cooling behavior.Thereby the cooling of the capacitive of optical record medium can be controlled by being adjusted into the parameter that forms the energy that is applied that mark adopts for the relative populations (thereby the total cooldown rate of described medium) of conduction cooling.In the embodiment of a recommendation, the energy that is applied takes to be applied to the form of the energy pulse on the described medium when forming mark.
Pointed as a last embodiment, each mark is all by applying a plurality of pulse shapings.In one embodiment of the invention, the parameter of strobe pulse makes the capacitive cooling of active material increase.More particularly, can select the parameter of energy pulse to make the capacitive cooling account at least 50% of the total cooling of active material, in other words, have at least 50% to be the capacitive cooling.Preferably the capacitive cooling is compared with other cooling and is preponderated.The parameter of energy pulse and optical storage can be matched, and preferably makes capacitive cooling account at least 55%, and it is at least 60% better that the capacitive cooling accounts for, and it is at least 70% best that the capacitive cooling accounts for.Thereby, be designed to strengthen the capacitive cooling, make it to surpass the energy pulse scheme of conduction cooling and produce mark by employing, thereby can reach the total cooldown rate of active material by the relative scale that increases the capacitive cooling.
As mentioned above, in the total cooldown rate of optical medium, the capacitive cooling is to cool off component more fast, and the conduction cooling is to cool off component more slowly.The energy pulse parameter of using when suitably selecting to write optical medium just can increase the total cooldown rate of medium.Fig. 2 represents to be subjected to the short temperature profile (profile) that dashes the stored CD active material layer middle part of irradiation of 10 nanoseconds of laser arteries and veins.Curve A is represented from 0 heating to the moment 10 nanoseconds of optical record mediums constantly.Shown in curve B, 10 nanoseconds of moment, described medium begins to cool down.Fig. 2 represents that initial cooling is very fast, follows by long cooling of time more slowly.Although the optical disk system complexity, total cooling behavior can be described with the linear combination of two decaying exponential functions just.That is
Tf＝F
fastC+F
slow(1-C)
In the formula
F
Fast=T
Aje
-(t-t0)/a+ T
Af(1-e
-(t-t0)/a) and
F
slow＝T
bje
-(t-t0)/b+T
bf(1-e
-(t-t0)/b)
In the formula, C is the ratio of capacitive cooling fast, t0 be time of beginning cooling cycle (that is=10ns).Component a and b be respectively fast and slowly cool time constant, T
AiAnd T
AfRelate to the initial and finishing temperature in the exponential damping of quick component, similarly, T
BiAnd T
BfThe expression slow component.
Initial cooling has quick constant cool time " a " less than 1 nanosecond, mainly by capacitive cooling control component (this depends on the factors such as relative thermal capacitance that comprise chalkogenide and insulation course).Otherwise, slowly cool off component and have, by conduction cooling control component (this depends on the temperature conductivity of chalkogenide and insulation course) greater than about 6 nanoseconds constant cool time " b ".Capacitive cooling is faster represented by the curve C of calculating in total cooling.The component of conduction cooling is more slowly represented by the curve D of calculating.Thereby, the parameter of the energy pulse of using when information being write optical medium or the energy that is applied, cooldown rate that can control medium by careful adjustment.
As mentioned above, by strengthening the capacitive cooling, can improve control to mark shape.Can also write mark the influence of the mark that write in the past being reduced under the minimum situation.In addition, no matter can reach high level aspect the in-plane of optical medium or the homogeneity that on thickness direction, forms at crystal grain.
In one embodiment, by the relatively short energy pulse of pulse width being applied on traditional optical storage and other, just can reach suitable cooling behavior.Short pulse width can according to the thermal time constant of device and/or phase-change material the decision of crystalline rate again.In one embodiment of the invention, each mark all uses a plurality of energy pulses to form, and each pulse has should be less than 14 nanoseconds pulse width, less than 10 nanoseconds better, and best less than 7 nanoseconds.In addition, pulse width can be less than 2 nanoseconds, less than 1 nanosecond better, best less than 500 psecs.
As top and discussed below, the heat management (with the net shape of mark) that mark forms can also be subjected to the optical record medium intrinsic characteristic, comprises the influence of material behavior and dielectric structure.These characteristics can be adjusted and be comprised following one or several:
(1) active phase change layer that thermal capacitance is low (element).This is convenient to carry out Fast Heating and cooling fast.
(2) extremely thin active phase change layer.Extremely thin active phase change layer helps to reducing the thermal resistance of cooling element, because the temperature conductivity of chalcogenide material is tending towards low.In addition, less thickness provides the total amount of heat that must take away at last.
(3) adjacent with activeleg nonactive element has high thermal capacitance.The high heat capacity adjacent with activeleg has contribution to quick cooling component.
(4) thickness of the insulating material between storage medium and reflection horizon (D2 layer) should only not adjusted in the consideration of calorifics, but also should be from the purpose adjustment of optical coupled.Although thin D2 layer can cause slowly cooling off the lower time constant of component really.
(5) adopt the Write strategy of short energy pulse can be used for making full use of the quick cooling component that capacitive is cooled off.
According to an alternative embodiment of the invention, a kind of multi-level recording strategy is provided, other mark of record level provide two-stage above is provided for its, for example, touch upon " 0 state " or when blank this mark possess 2 bit informations.Each mark can form with said method of the present invention.
The multi-level recording strategy preferably includes the utilization of the uniform data cell of size.Label information preferably provides in the border of corresponding data unit or size fully.Described mark can write with the method for avoiding changing or obviously change the mark of other data cell.Aspect a recommendation of multi-level recording strategy, the record rank can be with the width distinguishing of mark, and the length of mark remains unchanged basically.By utilizing method of the present invention to form detectable multistage mark, the effect of capacitive cooling can be used to improve the formation of mark, so that reduce cross-talk and shake is minimized.
Referring to Fig. 1, wherein integrally what come mark is the plan view of CD with 10, decomposition view 14 take from 12 places partial record session 34.Session 34 is divided into the predetermined uniformly data cell (shown in dotted line, only drawing for illustrating) 16,18,20,22,24,26 of a plurality of sizes.Session 34 has write down a plurality of marks 28,30,32, and these marks that form for multi-level recording have a plurality of record ranks, to allow the information more than dibit.Mark is to utilize the method that the present invention is above-mentioned and aftermentioned describes in detail to form.The record rank of each mark can be distinguished by the ratio of each data cell crystalline state/amorphous area or volume.Mark 28,30,32nd, amorphous state provides 3 different levels of reflectivity.As shown in the figure, the record rank is by mark width W decision, and the mark lengths between the mark remains unchanged.So, have the indexing unit of narrower width, such as mark 32, the numeric ratio of its reflectivity has the data cell 20 of the mark of broad width, such as the height of data cell 28.
The mark that utilizes method of the present invention to be shaped also may be used for the limit markers quantity of crystallization again itself.The crystallization again of this mark itself may be at the regional area around the mark appearance during to the degree of the leading mark cooling of conduction cooling (that is＞50%) by excessive heat.Overheated result is that cool time is longer relatively.Make and form the crystallization more significantly of amorphous mark the cool time that prolongs.The crystallization again of itself may cause the obvious contraction of label size.In some cases, label size may dwindle 1% or more, but may be up to 10%, 50%, perhaps even up to 100%.Utilization forms mark according to the one or more aspects of the present invention, mark just not only can write fashionable crystallization again that do not occur significantly itself, and write and fashionablely can not change other mark, such as the mark of adjacent data cell, the edge that can also be used to improve significantly mark detects.In addition, by avoiding significant crystallization again itself, mark can write along data cell in a continuous manner, for example, and the mark of complete filling corresponding data element length.
Apply energy from external source to phase-change material, the method to phase-change material deposit and adding energy is provided.The quantity of the energy of deposit depends on the quantity of the energy that is applied and passes to the energy proportion that is applied of phase-change material.In the embodiment of a recommendation, energy takes place by absorbing to the phase-change material NE BY ENERGY TRANSFER from external source.Stronger absorption causes adding more energy to phase-change material.
The energy that is added to phase-change material causes that its temperature rises.The temperature of phase-change material rises and rises along with the energy that is applied.When enough being exposed to extra power longways, the filament saturation of phase-change material is to maximal value.When removing extra power, the temperature of phase-change material reduces.Apply that temperature rises during the laser pulse, and the laser pulse source example that temperature descends when removing is shown in the Fig. 2 here.
The temperature conductivity of the spatial distribution map of the energy that the amplitude that temperature rises, the maximum temperature that can reach, the rate of heat addition of phase-change material and cooldown rate depend on energy such as deposit, applied, the thickness of phase change layer, the area in zone that applies energy and volume, phase-change material and thermal capacitance and phase-change material exist pile up or structure in the factor of existence, thickness, chemical constitution, thermal characteristics etc. of other layer of existing.
An object of the present invention is to form amorphous mark.In order to form mark, must apply enough energy, make the temperature of phase-change material rise to the high amorphous mark formation that must be enough to make.The shape of amorphous mark is subjected to the final effect and the influence of adjacent layer on every side of spatial distribution map, the time length that applies energy and the phase-change material self-energy of the energy that applied.
The space distribution of the energy that is provided by extra power is provided the spatial distribution map of the energy that applies.Spatial distribution map define intensity, power or energy intensity in the border of the energy that applies and these borders other measure.The area of space of the energy that is provided by extra power is provided on the border of the energy that applies.Zone in the border is directly from the extra power received energy, and the zone beyond the border then is not like this.Perhaps, the border of the energy can be regarded as the energy and propagates area of space or other medium of nationality so that energy to be provided.The boundary representation of light energy source, for example, the transformation from non-zero optical intensity to zero light intensity.The area of space that is illuminated receives non-zero optical intensity, and in the light energy source border that is applied, and the area of space that is not illuminated is outside described border.When phase-change material or other medium apply, the border of extra power defines the zone of the energy and phase-change material space overlap.Work as external light source, when for example being applied on the phase-change material, the space overlap zone is equivalent to the phase-change material part that illuminates when luminous energy is propagated by material.During incident or the energy that on the route of transmission of the energy that is applied, is applied act directly on the point in the space overlap zone.Space overlap comprises on the surface of phase-change material and the point that limits like this in the volume.
The spatial distribution map of the energy that is applied can be uniform or uneven.In uniform spatial distribution map, the intensity of energy is the same basically in the border of the energy that is applied.Be heated to such an extent that make surface temperature substantially the same hot surface on all points, for example, can be used as uniform heat energy.In spatial distribution map heterogeneous, the intensity of energy is spatial variations in the border of the energy.Many exterior light energy have space distribution heterogeneous.In typical laser beam, for example, light intensity is spatially to change according to such intensity distributions in beam boundaries, and promptly beam center intensity is the highest, and intensity reduces according to Gaussian function on the position of beam center leaving in beam boundaries.
Space distribution has determined the energy that applied and the space overlap of phase-change material, and the interactional intensity of extra power and phase-change material on the particular location in the space overlap zone.Extra power with homogeneous space distribution plan to its to the space overlap zone of phase-change material in all point all will have similar basically effect.Extra power with nonuniform space distribution plan has variable effect to points different in the space overlap zone.Variable effect is to occur according to the intensity of the energy in intensity distributions or its border.As an example, consider to have of the propagation of the laser beam of gaussian intensity profile figure by phase-change material.If described light beam is directly perpendicular to the phase-change material surface, then the expection of the zone of space overlap will be cylindrical basically, and described light beam produces maximum effect along the columniform longitudinal axis simultaneously, because the intensity of Gaussian laser beam is the highest at the center.According to the gaussian intensity profile figure of laser beam, other of space overlap zone named a person for a particular job and is affected on lesser extent.Point beyond cylindrical is outside the space overlap zone and directly be not subjected to the influence of Gaussian beam when Gaussian beam is propagated by phase-change material.
The spatial distribution map of the energy that is applied influences the shape of amorphous mark by the space overlap district that limits contact region or energy that is applied and phase-change material.Under situation about not existing such as the complementary effect that after this will describe, amorphous mark is only forming in the space overlap zone because this Regional Representative phase-change material add the part of energy.If add enough energy, to forming the required temperature of amorphous phase or higher, then can form mark to temperature increase.Therefore, the shape and size of mark are decided by the spatial distribution map of the energy that applies.If the intensity distributions in the border of the energy that applied is such: make that all points all are heated to the temperature that is enough to form amorphous phase in the space overlap zone, then mark will overlap with the integral body in space overlap zone.If have only point selected in the space overlap zone to be heated to the temperature that is enough to form amorphous phase, then mark will only overlap with these points.So, mark may be entirely or partly with the area coincidence of energy that is applied and phase-change material space overlap.
Therefore, the shape that might come control mark by the spatial distribution map of controlling the energy that is applied, because described spatial distribution map has been set up temperature profile in phase-change material, and this temperature profile is conclusive to could forming of mark.Temperature profile has been described the temperature space that reaches on result some positions in phase-change material as the energy that is applied and has been distributed.When initial incident, in the zone of energy that is applied and phase-change material space overlap, set up temperature profile, because this zone is directly to be subjected to the energy affect that applied just.Each locational initial temperature is that the intensity of the energy that applied on described position is peculiar in the space overlap zone.In time after initial incident, each locational temperature changes.If phase-change material exposes to the open air continuously under the energy that is applied after the initial incident, then because extra NE BY ENERGY TRANSFER to phase-change material, causes a locational temperature to rise.Because in dissipation or other energy transmission mode of phase-change material self-energy, locational temperature also may be lower than only depend on added the low speed that energy predicts and reduced (or rising).The effect of energy transmission will be described in greater detail below.
Except the spatial distribution map of the energy that applied, the application time of the energy that is applied or time length are another factors that influences mark shape.The temperature in somewhere is lower than the desired temperature of formation amorphous phase on the phase-change material when just applying energy, does not then form mark on described position at first.But, then continue to apply energy and can cause mark to form if the additional energy that exposure provided that prolongs is enough to described locational temperature increase is arrived more than the desired temperature of formation amorphous phase.
The time length of the energy that is applied also can influence mark and form, even add enough energy the temperature increase of phase-change material is arrived the formation desired temperature of amorphous phase or higher, because in order to allow mark form, must there be one sufficiently long period in phase-change material forming under required temperature of amorphous phase or the higher temperature.An example of this phenomenon is overheated, although promptly material temperature has risen to more than the temperature that can produce amorphous phase, the crystalline phase of material still keeps.Overheated appear at temperature high be enough to form amorphous phase time span too in short-term.So the time span that control applies energy has at least two kinds of approach to provide control to the shape of mark.
Except the time of the spatial distribution map and the energy that applies, the 3rd factor that influences mark shape is the final effect that the energy is added in the energy on the phase-change material.The energy that directly is added in phase-change material privileged site or zone is not to rest on indefinitely in that position or those zones, but may be transferred to its position or the zone of phase-change material.Conduction cooling and capacitive cooling procedure are energy from a location transmission of phase-change material to another position, perhaps are transferred to some examples of adjacent or on every side material from phase-change material.The clean effect of power transfer is that energy redistributes low energy area from high energy region.For example, heat energy flow to low-temperature region from high-temperature area.
The transmission of energy influences the formation of mark by the temperature profile that influences phase-change material.The temperature profile of phase-change material depends on that in material ad-hoc location adds the distribution again of energy between the speed of energy and each position.As previously mentioned, mark forms and requires phase-change material is heated to sufficiently high temperature, and keeps the sufficiently long time.Power transfer may play such effect: prevent to reach on the ad-hoc location the desired temperature of formation amorphous phase in phase-change material, or prevent that the specific point of phase-change material is being enough to form the effect that keeps sufficiently high temperature in the long time period of amorphous phase.
Phase-change material part beyond energy that power transfer also applies by providing and the phase-change material space overlap zone mechanism of received energy indirectly influences mark formation.As previously mentioned, the initial incident phase-change material of the energy that is applied provides the mechanism that directly energy is added in the space overlap zone.This zone is decided by the border of the energy that applied and the direction of propagating by phase-change material thereof.Although the phase-change material part is not directly accepted energy beyond the space overlap zone, they can accept energy indirectly by the transmission of energy.The energy that is deposited on the space overlap zone may be transferred to zone in addition, space overlap zone.The representative of this power transfer a kind of indirectly with energy deposition to not with the phase-change material mechanism partly of adding energy direct interaction.Power transfer mechanism may cause the temperature of space overlap district phase-change material in addition to rise indirectly.Thereby power transfer influences the temperature profile of phase-change material.
From the viewpoint that mark forms, power transfer may cause forming mark beyond the space overlap zone by energy is provided indirectly.The energy total amount that this effect provide beyond may be in the space overlap zone indirectly occurs when being enough to make the temperature of the part beyond the phase-change material space overlap zone to rise to form desired temperature of amorphous phase or higher temperature.Its consequence is that mark forms and may occur in beyond the space overlap zone.This effect may be undesirable, because it may cause not wishing the mark formation that occurs, the trend of mark increase or the reduction of storage density.The mark increase may cause mark boundaries fuzzy, also may cause the cross-talk between the mark.
For the shape of control mark, importantly control the temperature profile of phase-change material.The factor that influences the temperature profile of preset time comprises the spatial distribution map of the energy that is applied and the distribution again or the transfer rate of phase-change material self-energy in phase-change material applies the time length, phase-change material of the speed of energy, the energy that applied.Specified point is subjected to these factor affecting in the heating and cooling speed of phase-change material and the phase-change material.The energy total amount that phase-change material is gone in the deposit that is applied is called mark hereinafter and forms available energy budget.In the embodiment of a recommendation of the present invention, the energy that can be used for mark formation in the phase-change material is a heat energy, and energy budget is a thermal budget, and the latter can be called heat budget.Heat budget can be with the form of the heat energy that applied or by being that heat energy on the phase-change material of deposit receives from the Conversion of energy that is applied.
The management of heat budget is a key factor of control mark formation and shape.By the management of heat budget, temperature profile can be controlled, and the formation of mark can optionally appear at the phase-change material zone corresponding with anticipated shape.A kind of strategy of management heat budget is the phase-change material zone that optionally applies or make heat budget sensing requirement formation mark.The progress and the mark that form along with mark increase, and heat budget reduces, until the energy remaining deficiency so that mark further increase.Stopping that mark forms may be in available heat budget deficiency so that the temperature of the part of phase-change material rises to appearance when being enough to allow amorphous phase to form.
Can finish the formation of mark by suitably managing heat budget.The desired heat budget of mark that forms given shape is by the volume decision that temperature must be brought up to the relevant phase-change material of the mark shape that is enough to allow amorphous phase to form.Mark shape laterally and the dimension definitions of vertical direction the volume of the phase-change material relevant with mark.For given label size, can calculate the minimum thermal budget, it is equivalent to a temperature increase of being had a few of the phase-change material volume relevant with mark to the required minimum heat of minimum temperature that is enough to allow amorphous phase to form.
In principle, the minimum thermal budget that deposit is relevant with the specific markers shape should be enough to form mark.But in fact, the minimum thermal budgetary strategy has the complicacy of several respects.For effectively, the minimum thermal budgetary strategy requires in the border of the mark shape that requires the enough energy of deposit on each point, so that temperature is elevated to the minimum temperature that can allow amorphous phase to form.A complicacy relevant with the minimum thermal budgetary strategy is to be necessary to know that points all in the mark shape border that allows to require forms the desired least energy of amorphous phase.More such factors such as minimum temperature that this requires the local composition in the whole zone of all marks as requested of detail knowledge and allows to produce from each some amorphous phase.If phase-change material is homogeneity, can suppose that then all points all require identical minimum to apply energy in the border of mark of requirement.But many materials are heterogeneous, and show heterogeneous composition in short length range.It is difficult on the basis of pointwise such material being calculated the minimum that forms energy that amorphous phase requires.Even the energy of pointwise is known, the minimum thermal budget also requirement can obtain to mate or can adjust to such an extent that the extra power of pointwise least energy is provided in the mark boundaries of expection.Require even the uniform least energy that is applied is that the mark boundaries of whole expection is interior, this perhaps also is impossible.The phase-change material of the energy that is applied some deposit is interior and this part is possibly can't learn that such fact also makes pointwise apply least energy and becomes complicated.
In addition, the minimum thermal budgetary strategy requires any energy of deposit all must be retained on the point of deposit or at least in the mark boundaries of expection.The energy that is transferred to the mark boundaries zone in addition of expection is all represented the energy of loss, and they make the minimum thermal budgetary strategy lose efficacy inherently.Can't prevent the transmission of energy probably,, and set up thermograde with respect to the phase-change material beyond the mark expection border because improved temperature in these borders in the deposit of mark boundaries self-energy of expection.Such thermograde provides driving force for the transmission of energy.If can compare than the time scale relevant with power transfer on the time scale of much shorter, the energy of consumption institute deposit in the process that forms amorphous phase perhaps can prevent or restrains this power transfer at least.But this condition may be implacable, is enough to allow sufficiently long a period of time on the temperature that amorphous phase forms because phase-change material must rest on or be higher than, so that form mark.Become low more for forming the temperature that amorphous phase reached, the desired sufficiently long time cycle just becomes long more.Because the minimum thermal budgetary strategy means that the minimum temperature that can produce amorphous phase is set up in pointwise in the mark boundaries of expection, so minimum thermal budgetary strategy role is, prolongs phase-change material in the mark boundaries of expection and remain on a time span under the temperature that has raise.The time that exists with respect to the thermograde of the phase-change material part beyond the mark boundaries of expection strengthens with the possibility of power transfer to be increased.
Because there be the difficulty relevant, so surpass the energy of minimum thermal budget can advantageously utilize mark to form the time with the minimum thermal budgetary strategy.These superfluous energy can be used for alleviating the difficulty relevant with the minimum thermal budgetary strategy, and can compensate the energy that power transfer and other process are lost.But the existence of excess energy may bring other complicacy, because finally need dissipate or disperse to surpass the desired any energy of mark that forms the border with expectation.Therefore, form, must be handled by this way or distribute, that is, must not hinder to form to have the size of expection or this purpose of mark of shape although superfluous energy can quicken mark.
As an example, consider to be higher than the desired temperature of formation amorphous phase with next temperature in the mark expection border is brought up to of surplus heat budget.This temperature rises to shorten and forms the required time of amorphous phase, has therefore made things convenient for mark formation.But in a single day mark forms, and it just is present in one and is higher than under the temperature that has necessary employing minimum thermal budgetary strategy.Overheated mark need be cooled to its equilibrium temperature certainly, and the energy that discharges in cooling procedure is dissipated to mark boundaries phase-change material part in addition probably.The energy of this dissipation causes forming amorphous phase beyond the mark boundaries that should form, this causes again such as destructive effects such as mark increase or formation false marks.If the energy that dissipates is long enough or its amplitude makes the temperature of mark expection border phase-change material part in addition be elevated to the temperature that is enough to form amorphous phase, then just these effects may appear.
If mark forms the back excess energy and exists in one sufficiently long period in the mark boundaries, then another complicacy just may occur.If not crystalline phase is heated, still be heated one sufficiently long period after perhaps forming, then amorphous phase again crystallization may occur.Crystallization again may be occurred being lower than to form under the desired temperature of amorphous phase, thereby in the new amorphous phase cooling procedure that forms,, then crystallization again may be occurred if cooling is too slow.Crystallization is to be the process of crystalline phase by amorphous phase transition again.The condition that forms crystalline phase from amorphous phase can be described with the well-known TTT figure of prior art (time-temperature-transformation).TTT figure has summed up amorphous phase must rest on specified temp so that form the time of crystalline phase.Crystallization can appear in the temperature range that is limited by minimum temperature and maximum temperature again, and wherein minimum and maximum temperature depends on the chemical constitution of phase-change material.Crystallization occurs in phase-change material in order to recognize again under the desired minimum temperature of crystallization again, and material must keep this temperature in long period of time.Surpass described minimum temperature along with temperature rises to, under certain temperature between minimum temperature that can produce crystalline phase and the maximum temperature, the time of crystallization needs shortens again, until reaching the required shortest time of crystallization again.Under the temperature that is higher than the maximum temperature that can produce crystalline phase, further improve temperature and can cause the required time lengthening of crystallization again to arrive till the no longer possibility crystallization.This maximum temperature generally is lower than the temperature of fusion of phase-change material.
Therefore, along with temperature is brought up to the maximum temperature that can form crystalline phase from the desired minimum temperature of crystallization, the required time of crystallization reduces until reaching the shortest time always, and then increases.This variation of the time that crystallization is required has reflected the balance between the various competitive effect that causes photic crystalline phase crystallization.These factors comprise the amorphous phase atom rearrange may take place crystallization between structure and phase-change material keep this intermediate structure for a comparatively long period of time so that the ability of crystallization takes place.Under lower temperature, the heat of existence is too low, does not allow the amorphous phase atomic surface to move and recombinates.Otherwise moving is slow-action, and the crystallization required time can be correspondingly long.Under higher temperature, the heat of existence is enough to make the amorphous phase atomic surface to move and recombinates.But, move and betide the surface, so that help the life period of the atom intermediate structure of crystallization not allow best crystallization.Otherwise heat energy had destroyed this structure before crystallization is finished.
The power transfer that relevant crystallization effect exists beyond mark is expected the border (or transmission again) occurs when mark is expected within the border.Energy may be present in outside the mark expection border, because being the mark that is applied directly to that has directly been transmitted by the energy that is applied (for example, if the spatial distribution map of the energy that is applied just may occur when expanding to outside the mark expection border) or its representative, it expects energy in the border.It is possible being present in that energy outside the mark boundaries gets back within the mark boundaries.Energy can bring out the mark part crystallization like this, makes mark quality influenced.This effect can be called reverse crystallization.
Therefore, a kind of optical recording and mark form used effective surplus heat budget management strategy and not only quicken to expect the formation of border internal labeling, and are convenient to carry out harmless overheated budget and handle.Such as mark increase, false mark forms, mark boundaries diffusion, the mark that separates merge, again crystallization and oppositely crystallization all need be controlled.
The invention provides a kind of mark that has an anticipated shape by formation and come the strategy of recorded information.Described strategy allows to apply the energy above desired quantity in the minimum thermal budgetary strategy, but makes every effort to make surplus to minimize, thereby can be called the low heat budget strategy.Described strategy is further sought with the harmless mode superfluous heat budget that dissipates.In the present invention, the heat budget management is to apply energy by the form with short energy pulse to solve.Illustrate, short energy pulse has improved cooldown rate, is convenient to make energy to dissipate away from the mark boundaries of expection.According to the present invention, by utilizing the energy that forms mark better and promoting the harmless mechanism that the surplus heat budget dissipates, for energy pulse provides more effective control to heat budget.
One aspect of the present invention is that short pulse improves dissipation of energy by the mechanism that makes the capacitive cooling mechanism surpass the conduction cooling.Capacitive cooling raio conduction cooling provides the speed of faster cooling.From the viewpoint of the mark that forms anticipated shape, emphasize that the capacitive cooling is favourable, because energy dissipation can expect that the possibility that forms mark beyond the border reduces to minimum to mark faster.When superfluous heat budget transmitted fast, it passed to beyond the mark expection border, and can not stop one period that is enough to form amorphous phase by any specific part of phase-change material beyond mark is expected the border.Thereby the boundary line, border of mark is more clear.The quick transmission of energy also suppresses crystallization again, because in a single day the energy that short pulse applied withdraw, the mark temperature that has improved reduces rapidly along with its formation.The rapid reduction of temperature makes and is marked under the temperature that can produce crystalline phase the possibility minimum that keeps being enough to forming the time span of crystalline phase.
Claims (9)
1. method that the optical phase change material is write down said method comprising the steps of:
Form mark by applying a plurality of energy pulses to described phase-change material, each described pulse has the pulse width less than 14 nanoseconds.
2. the method for claim 1, it is characterized in that: each pulse width is less than 10 nanoseconds.
3. the method for claim 1, it is characterized in that: each pulse width is less than 7 nanoseconds.
4. the method for claim 1, it is characterized in that: described label has constant width or tapered width.
5. the method for claim 1, it is characterized in that: described mark comprises amorphous material.
6. the method for claim 1, it is characterized in that: described active material comprises chalkogenide.
7. the method for claim 1, it is characterized in that: described mark provides plural record rank.
8. method as claimed in claim 7 is characterized in that: form a plurality of described marks, and active material has the predetermined uniformly data cell of a plurality of sizes, each mark all forms in data cell fully.
9. method as claimed in claim 8 is characterized in that: other mark of different recording level is distinguished by mark width.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| US25807800P | 2000-12-22 | 2000-12-22 | |
| US60/258078 | 2000-12-22 |
Related Parent Applications (1)
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|---|---|---|---|
| CNB018227732A Division CN1286049C (en) | 2000-12-22 | 2001-12-21 | Method of recording memory |
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| CN1831960A true CN1831960A (en) | 2006-09-13 |
| CN100394484C CN100394484C (en) | 2008-06-11 |
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| CNB2005101370613A Expired - Fee Related CN100394484C (en) | 2000-12-22 | 2001-12-21 | Method of recording memory |
| CNB018227732A Expired - Fee Related CN1286049C (en) | 2000-12-22 | 2001-12-21 | Method of recording memory |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB018227732A Expired - Fee Related CN1286049C (en) | 2000-12-22 | 2001-12-21 | Method of recording memory |
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| US (1) | US7012874B2 (en) |
| EP (1) | EP1344179A4 (en) |
| JP (1) | JP2004521433A (en) |
| CN (2) | CN100394484C (en) |
| AU (1) | AU2002241652A1 (en) |
| TW (1) | TW544670B (en) |
| WO (1) | WO2002052547A2 (en) |
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| JP4123007B2 (en) * | 2003-02-27 | 2008-07-23 | ヤマハ株式会社 | Optical disc recording method and apparatus |
| JP4405451B2 (en) * | 2005-09-05 | 2010-01-27 | 株式会社東芝 | Information recording device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3530441A (en) * | 1969-01-15 | 1970-09-22 | Energy Conversion Devices Inc | Method and apparatus for storing and retrieving information |
| JPS6049977B2 (en) * | 1980-04-23 | 1985-11-06 | 松下電器産業株式会社 | optical disk device |
| JPS647327A (en) * | 1987-03-25 | 1989-01-11 | Casio Computer Co Ltd | Method and apparatus for optical information recording |
| US4924436A (en) * | 1987-06-22 | 1990-05-08 | Energy Conversion Devices, Inc. | Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite |
| US5513167A (en) * | 1989-12-20 | 1996-04-30 | Sony Corporation | Optical recording apparatus |
| US5642343A (en) * | 1990-06-29 | 1997-06-24 | Hitachi, Ltd. | Magnetooptic disc apparatus and recording medium |
| US5346740A (en) * | 1990-09-25 | 1994-09-13 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium |
| US5295131A (en) * | 1990-10-02 | 1994-03-15 | Matsushita Electric Industrial Co., Ltd. | Optical information recording disk having embossed clock mark pits and embossed information recording pits |
| CN1083615A (en) * | 1992-08-19 | 1994-03-09 | 菲利浦电子有限公司 | Information storage system |
| JP3287648B2 (en) * | 1993-06-07 | 2002-06-04 | 株式会社リコー | Simultaneous recording verification method for phase change type information recording medium and phase change type information recording drive device |
| US5561656A (en) * | 1994-11-18 | 1996-10-01 | International Business Machines Corporation | Pulse width modulation optical disk drive with pulsed laser preheating between marks |
| US5555537A (en) * | 1995-06-30 | 1996-09-10 | International Business Machines Corporation | Optical data storage system with multiple write-once phase-change recording layers |
| US5818806A (en) * | 1996-01-29 | 1998-10-06 | Calimetrics, Inc. | Method and apparatus for providing equalization for the reading of marks on optical data storage media |
| US5761111A (en) * | 1996-03-15 | 1998-06-02 | President And Fellows Of Harvard College | Method and apparatus providing 2-D/3-D optical information storage and retrieval in transparent materials |
| DE69931953T2 (en) * | 1998-10-26 | 2006-10-12 | Mitsubishi Kagaku Media Corp., Ltd. | METHOD FOR RECORDING AND REPRODUCING ADDITIONAL DIGITAL SIGNALS AND ADDITIONAL MEDIA OF THE PHASE CHANGE TYPE |
| JP2000229478A (en) * | 1998-12-09 | 2000-08-22 | Tdk Corp | Optical recording body |
| CA2370836A1 (en) * | 1999-04-22 | 2000-11-02 | Energy Conversion Devices, Inc. | Optical recording media having increased erasability |
| US6563779B1 (en) * | 1999-06-16 | 2003-05-13 | Siros Technologies, Inc. | Tracking error signal generation using confocally filtered detection |
| US6775218B1 (en) * | 1999-08-12 | 2004-08-10 | Lsi Logic Corporation | High density data write strategy |
-
2001
- 2001-12-21 TW TW090131767A patent/TW544670B/en not_active IP Right Cessation
- 2001-12-21 CN CNB2005101370613A patent/CN100394484C/en not_active Expired - Fee Related
- 2001-12-21 EP EP01988336A patent/EP1344179A4/en not_active Withdrawn
- 2001-12-21 JP JP2002553762A patent/JP2004521433A/en active Pending
- 2001-12-21 WO PCT/US2001/049142 patent/WO2002052547A2/en active Application Filing
- 2001-12-21 US US10/026,395 patent/US7012874B2/en not_active Expired - Fee Related
- 2001-12-21 AU AU2002241652A patent/AU2002241652A1/en not_active Abandoned
- 2001-12-21 CN CNB018227732A patent/CN1286049C/en not_active Expired - Fee Related
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| US7012874B2 (en) | 2006-03-14 |
| JP2004521433A (en) | 2004-07-15 |
| EP1344179A4 (en) | 2007-04-18 |
| US20020114256A1 (en) | 2002-08-22 |
| EP1344179A2 (en) | 2003-09-17 |
| CN100394484C (en) | 2008-06-11 |
| CN1541368A (en) | 2004-10-27 |
| TW544670B (en) | 2003-08-01 |
| AU2002241652A1 (en) | 2002-07-08 |
| CN1286049C (en) | 2006-11-22 |
| WO2002052547A8 (en) | 2004-02-26 |
| WO2002052547A2 (en) | 2002-07-04 |
| WO2002052547A3 (en) | 2002-10-24 |
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