CN1828240A - Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet - Google Patents
Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet Download PDFInfo
- Publication number
- CN1828240A CN1828240A CN 200510051407 CN200510051407A CN1828240A CN 1828240 A CN1828240 A CN 1828240A CN 200510051407 CN200510051407 CN 200510051407 CN 200510051407 A CN200510051407 A CN 200510051407A CN 1828240 A CN1828240 A CN 1828240A
- Authority
- CN
- China
- Prior art keywords
- sensor
- ultraviolet
- quartz glass
- photoresistance
- zinc sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Abstract
The presented sensor comprises a photoconductive resistance with resist value varying with the received ray strength, and a quartz glass on the sensor for filter.
Description
Technical field
The invention provides a kind of UV sensor, refer to a kind of UV sensor especially with penetrable ultraviolet quartz glass.
Background technology
(chlorofluroc-aaarbons CFCs) destroys, and causes ultraviolet radiation near the ground to increase year by year because the ozonosphere in the atmosphere is subjected to anthropogenic discharge's chloro-fluorocarbon compound for a long time.And ultraviolet irradiation may cause the pathology of skin.Therefore, if can detect at that time uitraviolet intensity, people just can in time note the healthy and safe of self, just are unlikely to be exposed under the strong ultraviolet ray not know, and when ultraviolet ray is strong, avoid unnecessary and go out or take precautions against ultraviolet irradiation.
Generally speaking, ultraviolet ray can be categorized into three types: ultraviolet light,long wave (UV-A; Wavelength is between 320-400nm), UV-B (UV-B; Wavelength is between 280-320nm) and ultraviolet C (UV-C; Wavelength is less than 280nm).In this three class, UV-C is the most dangerous ultraviolet ray, and fortunately, UV-C relatively is not easy to arrive at earth surface.And because ozone layer degradation, uv b radiation near the ground can significantly increase, but not the UV-A radiation increases.This is because the efficient of ozone absorption uv b radiation is about 100 to 1000 times that absorb UV-A in the atmosphere, so the atmospheric ozone minimizing, instead will cause UV-B near the ground significantly to increase.
For human, see also Fig. 1; Fig. 1 is the erythema effect curve of spectrum (erythema actionspectrum).Wavelength coverage is to cause skin to cause red topmost wave band between 280nm to 298nm (belonging to the UV-B wavelength), and its weighting numerical value is 1.When wavelength during greater than 298nm, its weighting numerical value reduces fast; Then only remaining about ten thousand during to 400nm/.
Therefore, if will detect the ultraviolet ray that is harmful to human health effectively, should be based on the detecting ultraviolet range between 280nm to 298nm; In other words, should be based on detecting UV-B wavelength.Yet, the pertinent instruments of ultraviolet ray detection on the market, as photomultiplier (photo multiplier tube), silicon crystal UV sensor (silicon UV detector) and gallium nitride UV sensor (AlGaN UV detector) etc., the neither product that is fit to be applied to detect UV-B.Reason is that the required voltage of photomultiplier is higher, volume is big, operation is difficult for and production cost is too high.The silicon crystal UV sensor then is the detecting of laying particular stress on visible light (wavelength is between 400nm-760nm), and its wavelength coverage of mainly detecting is between the 350nm to 950nm, and is relatively poor for ultraviolet sensing function.In addition, though the wavelength coverage that the gallium nitride UV sensor is mainly detected between between the 200nm to 365nm, it is easy to generate lattice imperfection (lattice defect) during fabrication, cause produce to go up be difficult to control and yield very low.
Summary of the invention
The invention provides a kind of UV sensor, to solve the above problems with penetrable ultraviolet quartz glass.
The present invention discloses a kind of UV sensor with penetrable ultraviolet quartz glass, it comprises a photoresistance, and its output valve can change along with the light intensity that is received, and a quartz glass, be installed in this photoresistance, to filter the light that this photoresistance is received.
The present invention also points out a kind of UV sensor with zinc sulfide layer, and its output valve can change along with the light intensity that is received, and this UV sensor comprises: a shell; One ceramic substrate is located at the inboard of this shell; One zinc sulfide layer is located on this ceramic substrate, in order to receive light; Two electrodes are arranged on this zinc sulfide layer; And two the lead-in wire, run through this two electrode, this zinc sulfide layer and this ceramic substrate, in order to two-terminal as this photoresistance.
Description of drawings
Fig. 1 is the erythema effect curve of spectrum.
Fig. 2 has the synoptic diagram of the UV sensor of penetrable ultraviolet quartz glass for the present invention.
Symbol description
10 UV sensor, 20 photoresistance, 21 shells
22 electrodes, 24 zinc sulfide layers, 26 ceramic substrates
28 lead-in wires, 30 English glass, 32 silver layers
Embodiment
See also Fig. 2, the synoptic diagram of the UV sensor 10 of Fig. 2 penetrable ultraviolet quartz glass 30 for the present invention has.UV sensor 10 comprises a photoresistance 20 and a penetrable ultraviolet quartz glass 30.Photoresistance 20 comprises two electrodes 22, a zinc sulfide layer 24, a ceramic substrate 26, two lead-in wires, 28 and one shell 21.Ceramic substrate 26 is located at the inboard of shell 21, and zinc sulfide layer 24 is located on the ceramic substrate 26, in order to receive light, two electrodes 22 are arranged on the zinc sulfide layer 24, two lead-in wires 28, penetrating electrode 22, zinc sulfide layer 24 and ceramic substrate 26 are in order to the two-terminal as photoresistance 20.The material of shell 21 can be pottery or other material.
Zinc sulfide layer 24 is the light electric conductor, when particular light ray is shone thereon, relative meeting produces carrier in zinc sulfide layer 24, to improve the electric conductivity of zinc sulfide layer 24, therefore the resistance between two electrodes 22 can change along with light intensity that zinc sulfide layer 24 received.What note is, in the prior art, the light electric conductor of photoresistance commonly used is generally cadmium sulfide (CdS), and the light of its detecting is in the majority with visible light, and its wavelength coverage is more than the 540nm, and is therefore relatively poor for ultraviolet sensing.And the present invention utilizes the reason of zinc sulfide layer 24 to be that the main light of zinc sulfide layer 24 detectings is ultraviolet ray, and its wavelength coverage is below the 380nm, more can demand according to the invention.
Quartz glass 30 is installed in the photoresistance 20, its only penetrable ultraviolet ray.One side of quartz glass 30 has the highly purified silver layer 32 of one deck, and its purity is more than 99%.Photoresistance 20 utilize the thickness of adjusting this silver layer 32 to completely cut off the partly ultraviolet ray of frequency, so that only can receive not by isolated ultraviolet ray.The thickness of for example adjusting silver layer 32 makes only to be had wavelength can penetrate silver layer 32 between the ultraviolet ray between 280nm and the 380nm to shine zinc sulfide layer 24 in photoresistance 20, to change the resistance of photoresistance 20.Because after a side of quartz glass 30 plated silver layer 32, as long as the thickness of silver layer 32 is appropriate, promptly may command penetrated the ultraviolet wavelength coverage of silver layer 32.Therefore in the present invention, zinc sulfide layer 24 also can be detected ultraviolet smooth conductive material by other and be replaced.
As previously mentioned, the most therefore ultraviolet radiation to the harm of human body with the UV-B wavelength as long as above-mentioned quartz glass 30 only is made into and can cooperates the running of photoresistance 20 again by the quartz glass of UV-B wavelength, can detect UV-B effectively.Therefore the present invention can be applicable on the ultraviolet Related product of any detecting.When the intensity (ultraviolet index) of the UV-B of environment surpassed safe range, UV sensor 10 of the present invention was utilized the variation of its resistance, also can be generically and collectively referred to as output valve via simply designing to current value changes or magnitude of voltage changes.
Compared to prior art, the invention provides a kind of sensor that can accurately detect specific ultraviolet range.Compared to photomultiplier, silicon crystal UV sensor and gallium nitride UV sensor, the present invention is more suitable for being applied to detect the product of UV-B, and can produce in a large number.Yet the present invention there is no and is confined to detect the UV-B wavelength, and it can change the thickness of high-purity silver in the quartz glass according to different demands, to intercept the ultraviolet ray of different wavelength range.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (14)
1. the UV sensor with penetrable ultraviolet quartz glass is characterized in that, comprises:
One photoresistance, its output valve can change along with the light intensity that is received; And
One quartz glass is installed in this photoresistance, to filter the light that this photoresistance is received.
2. UV sensor as claimed in claim 1 is characterized in that, the only penetrable ultraviolet ray of this quartz glass.
3. UV sensor as claimed in claim 2 is characterized in that other comprises a silver layer, is formed at a side of this quartz glass, is used for completely cutting off the partly ultraviolet ray of frequency, so that this photoresistance only can receive not by isolated ultraviolet ray.
4. UV sensor as claimed in claim 3 is characterized in that the purity of this silver layer is about more than 99%.
5. UV sensor as claimed in claim 3 is characterized in that, the ultraviolet wavelength that can penetrate this silver layer is between 280nm and 380nm.
6. UV sensor as claimed in claim 1 is characterized in that, this photoresistance comprises:
One shell;
One ceramic substrate is located at the inboard of this shell;
One zinc sulfide layer is located on this ceramic substrate, in order to receive light;
Two electrodes are arranged on this zinc sulfide layer; And
Two lead-in wires run through this two electrode, this zinc sulfide layer and this ceramic substrate, in order to the two-terminal as this photoresistance.
7. UV sensor as claimed in claim 6 is characterized in that this shell comprises stupalith.
8. the UV sensor with zinc sulfide layer is characterized in that, its output valve can change along with the light intensity that is received, and this UV sensor comprises:
One shell;
One ceramic substrate is located at the inboard of this shell;
One zinc sulfide layer is located on this ceramic substrate, in order to receive light;
Two electrodes are arranged on this zinc sulfide layer; And
Two lead-in wires run through this two electrode, this zinc sulfide layer and this ceramic substrate, in order to the two-terminal as this photoresistance.
9. UV sensor as claimed in claim 8 is characterized in that other comprises a quartz glass, is installed on this shell.
10. UV sensor as claimed in claim 9 is characterized in that, the only penetrable ultraviolet ray of this quartz glass.
11. UV sensor as claimed in claim 9 is characterized in that, other comprises a silver layer, is formed at a side of this quartz glass, is used for completely cutting off the partly ultraviolet ray of frequency, so that this UV sensor only can receive not by isolated ultraviolet ray.
12. UV sensor as claimed in claim 11 is characterized in that, the purity of this silver layer is more than 99%.
13. UV sensor as claimed in claim 11 is characterized in that, the ultraviolet wavelength that can penetrate this silver layer is between 280nm and 380nm.
14. UV sensor as claimed in claim 8 is characterized in that, this shell comprises stupalith.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510051407 CN1828240A (en) | 2005-03-02 | 2005-03-02 | Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510051407 CN1828240A (en) | 2005-03-02 | 2005-03-02 | Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1828240A true CN1828240A (en) | 2006-09-06 |
Family
ID=36946740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510051407 Pending CN1828240A (en) | 2005-03-02 | 2005-03-02 | Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1828240A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135631A (en) * | 2010-12-15 | 2011-07-27 | 安徽华东光电技术研究所 | Miniature high-sensitivity ultraviolet detector and manufacturing method thereof |
| CN104204951A (en) * | 2012-03-20 | 2014-12-10 | Asml荷兰有限公司 | Lithographic apparatus, sensor and method |
| CN104456665A (en) * | 2013-09-17 | 2015-03-25 | 耀颢科技有限公司 | Flame sensing apparatus and range hood employing same |
| CN109997020A (en) * | 2016-09-27 | 2019-07-09 | 株式会社爱茉莉太平洋 | System and method for measuring the ultraviolet protection of cosmetic material |
-
2005
- 2005-03-02 CN CN 200510051407 patent/CN1828240A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135631A (en) * | 2010-12-15 | 2011-07-27 | 安徽华东光电技术研究所 | Miniature high-sensitivity ultraviolet detector and manufacturing method thereof |
| CN104204951A (en) * | 2012-03-20 | 2014-12-10 | Asml荷兰有限公司 | Lithographic apparatus, sensor and method |
| US9470985B2 (en) | 2012-03-20 | 2016-10-18 | Asml Netherlands B.V. | Lithographic apparatus, sensor and method |
| CN104204951B (en) * | 2012-03-20 | 2017-03-01 | Asml荷兰有限公司 | Lithographic equipment, sensor and method |
| CN104456665A (en) * | 2013-09-17 | 2015-03-25 | 耀颢科技有限公司 | Flame sensing apparatus and range hood employing same |
| CN109997020A (en) * | 2016-09-27 | 2019-07-09 | 株式会社爱茉莉太平洋 | System and method for measuring the ultraviolet protection of cosmetic material |
| CN109997020B (en) * | 2016-09-27 | 2022-08-30 | 株式会社爱茉莉太平洋 | System and method for measuring ultraviolet protection of cosmetic materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Ultrasensitive, superhigh signal-to-noise ratio, self-powered solar-blind photodetector based on n-Ga2O3/p-CuSCN core–shell microwire heterojunction | |
| Ghosh et al. | Ultraviolet photodetection characteristics of Zinc oxide thin films and nanostructures | |
| Kumar et al. | High performance, flexible and room temperature grown amorphous Ga2O3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes | |
| CN105576073B (en) | Graphene/beta-Ga＜2＞O＜3＞-based schottky junction deep ultraviolet photodetector and preparation method thereof | |
| Chen et al. | The effect of oxygen vacancy concentration on indium gallium oxide solar blind photodetector | |
| CN1828240A (en) | Ultraviolet sensor possessing quartz glass capable of being penetrated by ultraviolet | |
| Shao et al. | High Responsivity, Bandpass Near-UV Photodetector Fabricated From PVA-$\hbox {In} _ {2}\hbox {O} _ {3} $ Nanoparticles on a GaN Substrate | |
| WO2010025291A3 (en) | Four terminal multi-junction thin film photovoltaic device and method | |
| Mamat et al. | Fabrication of thin, dense and small-diameter zinc oxide nanorod array-based ultraviolet photoconductive sensors with high sensitivity by catalyst-free radio frequency magnetron sputtering | |
| KR101826951B1 (en) | Light detecting device | |
| Sui et al. | A flexible and transparent β-Ga2O3 solar-blind ultraviolet photodetector on mica | |
| US9166092B2 (en) | Light detection device | |
| EP2175497A2 (en) | A photodiode | |
| CN104409555B (en) | A kind of ultraviolet inductor based on Graphene and preparation method thereof | |
| CN109192794A (en) | Enhanced interdigital electrode diamond ultraviolet detector of backboard and preparation method thereof | |
| Jheng et al. | MgZnO/SiO2/ZnO metal–semiconductor–metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter | |
| CN104504838A (en) | Ultraviolet flame detector adopting zinc oxide-based semiconductor film | |
| Hsu et al. | Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering | |
| Zhu et al. | Middle-ultraviolet-enhanced photodetectors based on Mg0. 4Zn0. 6O/ZnO homojunction with a high selectivity for 300 nm around light | |
| Lopez-Ponce et al. | Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection | |
| JP2013033839A (en) | Ultraviolet ray sensor element and ultraviolet ray sensor | |
| JP5925634B2 (en) | Semiconductor defect evaluation method | |
| CN109755341A (en) | Based on β-Ga2O3The solar blind UV electric explorer of/FTO hetero-junctions and its preparation | |
| Wu et al. | MgZnO nanorod homojunction photodetectors for solar-blind Detection | |
| Han et al. | Great Enhancement Effect of 20–40 nm Ag NPs on Solar-Blind UV Response of the Mixed-Phase MgZnO Detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |